Low-temperature transport properties of chemical solution deposited polycrystalline La0.7Sr0.3MnO3 ferromagnetic films under a magnetic field

Polycrystalline La_0.7Sr_0.3MnO₃ (LSMO) films were prepared on SiO₂/Si (001) substrates by chemical solution deposition technique. Electrical and magnetic properties of LSMO were investigated. A minimum phenomenon in resistivity is found at the low temperature (<50 K) under magnetic fields from 0 T to 3 T. Kondo-like spin dependent scattering, which includes both spin polarization and grain boundary tunneling, was observed in the low-temperature electrical transport for the LSMO polycrystalline films. The temperature-dependent resistivity at low temperatures can be well fitted in the framework of elastic scattering, electron-electron (e-e) interaction, Kondo-like spin dependent scattering, and electron-phonon (e-ph) interaction.     

Electrical behavior of some silver-doped lanthanum-based CMR materials

With a view to understand the structural, magnetic and electrical properties of La_1−xAg_xMnO₃ (x=0.05-0.3), a series of samples were prepared by polyvinyl alcohol (PVA) gel route. It has been found that both the metal-insulator and ferro- to paramagnetic transition temperatures after increasing up to the composition x=0.20, are found to remain constant thereafter. The electrical resistivity vs. temperature plot of the sample x=0.10 is found to exhibit an insulating behavior below 36 K, while the sample, x=0.20 exhibits two peaks, and the observed behavior is explained on the basis of the phase separation model. The low-temperature (T<T_P), electrical resistivity data were analyzed by a theoretical model, ρ=ρ₀+ρ₂T²+ρ_4.5T^4.5, indicating the importance of grain/domain boundary effects, electron-electron and two-magnon scattering processes. The low-temperature resistivity data (T<50 K) were fitted to an equation, which is based on the combined effect of weak localization, electron-electron and electron-phonon scattering.     

Magnetic and electrical behavior of La1−xAxMnO3 (A=Li, Na, K and Rb) manganites

With a view to understand the magnetic and electrical behavior of monovalent substituted lanthanum manganites, a series of materials were prepared by sol-gel route by sintering at 1200 °C. The X-ray diffraction data were analyzed using Rietveld refinement technique and it has been found that all the samples were found to crystallize into rhombohedral structure with R3¯c space group. The values of ferro to paramagnetic (T_C) and metal-insulator transition (T_P) temperatures were obtained using ac susceptibility and electrical resistivity data, respectively. It has been found that sodium-, potassium- and rubidium-doped samples exhibit two peaks in the electrical resistivity vs. temperature plots. The observed behavior has been explained on the basis of oxygen deficiency present in the samples. The electrical resistivity data were analyzed using various theoretical models and it has been concluded that the electrical resistivity data in the low-temperature regime (T<T_P) can be explained using the equation ρ_(T)=ρ₀+ρ₂T²+ρ_4.5T^4.5, signifying the importance of the grain/domain boundary, electron-electron and two magnon scattering processes. On the other hand, the high-temperature resisitivity data (T>T_P) were explained using variable range and small polaron hopping mechanisms.     

Structural, magnetotransport and morphological studies of Sb-doped La2/3Ba1/3MnO3 ceramic perovskites

We report here the structural, magnetotransport and morphological studies of Sb-doped La_2/3Ba_1/3Mn_1−xSb_xO₃ perovskite manganites. Pristine material La_2/3Ba_1/3MnO₃ (LBMO) shows two insulator-metal (I-M) transitions in the electrical resistivity-temperature (ρ-T) behavior. While the higher temperature transition (T_P1) at ∼340 K is reminiscent of the usual I-M transition in manganites, the lower temperature transition (T_P2) at ∼250 K has been ascribed to the grain boundary (GB) effects arising out of the ionic size mismatch between the ions present at the rare-earth site (La³⁺ and Ba²⁺). With Sb-doping T_P1 shifts to lower temperatures while T_P2 remains invariant up to 3% and shifts to lower temperature for 5%. Room temperature electrical resistivity and the peak values also increase successively with Sb-doping. Scanning electron micrographs of the samples exhibit a gradual increase in their grain sizes with Sb indicating a gradual decrease in the GB density. Shift of T_P1 with doping is explained on the basis of a competition between double-exchange and super-exchange mechanisms. The overall electrical resistivity increases and the shift in the electrical resistivity hump (T_P2) with Sb-doping is found related to be gradually decreasing GB density and the ensuing lattice strain increase at the GBs. The intrinsic magnetoresistance (MR) gets suppressed and extrinsic MR gets enhanced with Sb-doping. At T>T_P1, the electrical resistivity is found to follow the adiabatic polaron hopping model whereas the electron-magnon scattering is found to dominate in the metallic regime (T<T_P1).     

Electrical conductivity and low field magnetoresistance in polycrystalline La1−xKxMnO3 pellets prepared by pyrophoric method

Electrical conductivity and magnetoresistance of a series of monovalent (K) doped La_1−xK_xMnO₃ polycrystalline pellets prepared by pyrophoric method have been reported. K doping increases the conductivity as well as the Curie temperature (T_C) of the system. Curie temperature increases from 260 to 309 K with increasing K content. Above the metal-insulator transition temperature (T>T_MI), the electrical resistivity is dominated by adiabatic polaronic model, while in the ferromagnetic region (50<T<T_MI), the resistivity is governed by several electron scattering processes. Based on a scenario that the doped manganites consist of phase separated ferromagnetic metallic and paramagnetic insulating regions, all the features of the temperature variation of the resistivity between ∼50 and 300 K are described very well by a single expression. All the K doped samples clearly display the existence of strongly field dependent resistivity minimum close to ∼30 K. Charge carrier tunneling between antiferromagnetically coupled grains explains fairly well the resistivity minimum in monovalent (K) doped lanthanum manganites. Field dependence of magnetoresistance at various temperatures below T_C is accounted fairly well by a phenomenological model based on spin polarized tunneling at the grain boundaries. The contributions from the intrinsic part arising from DE mechanism, as well as, the part originating from intergrannular spin polarized tunneling are also estimated.     

Double metal-insulator peaks and effect of Sm substitution on magnetic and transport properties of hole-doped La0.85Ag0.15MnO3

La_0.85−xSm_xAg_0.15MnO₃ (x=0−0.2) ceramics were prepared using the conventional solid-state synthesis method to investigate the effect of Sm³⁺ substitution on magnetic and electrical transport properties. Magnetic susceptibility versus temperature measurements showed all samples exhibit ferromagnetic to paramagnetic transition with Curie temperature, T_c decreasing from 283 K (x=0) to 164 K (x=0.2) with increasing Sm³⁺. The observed slope in susceptibility, χ′ versus temperature curves below T_c indicates the possible presence of FM and AFM phases in the metallic region. In addition, a deviation from the Curie-Weiss law above T_c in 1/χ′ versus T curves indicates the existence of a Griffith's phase in the x=0.05−0.2 samples due to the Sm³⁺ ion substitution. The Griffith temperature, T_G was found to decrease from 295 K (x=0.05) to 229 K (x=0.2). Electrical resistivity measurements of the samples in zero field showed transition from metallic behavior to insulating behavior as the temperature was increased. For x=0, two metal-insulator, MI transition peaks were observed at T_p1=282 K and at T_p2=250 K. Both peaks shifted to lower temperatures with the increase in Sm³⁺. The relative resistivity of the first peak to the second peak decreases with increasing Sm³⁺ for x>0.05 while at x=0.2 the T_p1 peak was strongly suppressed. Magnetoresistance, MR was observed to weaken with Sm³⁺ substitution. The metallic region of the ρ(T) curve of the x=0−0.15 samples was fitted to the model of electron-electron and electron-magnon scattering while the insulating region was fitted to the variable range hopping, VRH model. The resistivity behavior indicated that the substitution of Sm³⁺ weakened the double exchange process and enhanced the Jahn-Teller effect. Our results indicated that the T_p1 peak is strongly related to the double-exchange mechanism while the T_p2 peak is suggested to originate from magnetic inhomogeneity.     

Low temperature electrical conductivity and magnetoconductivity of Fe39Ni39Mo4Si6B12 and Co58Ni10Fe5Si11B16 metallic glass alloys

A detailed study on the weak localization phenomenon vis-a-vis electron-electron interaction effects in magnetic metallic glasses has been carried out. We measured the electrical conductivity and magnetoconductivity within the temperature range 1.8≤T≤300K. A maximum on the conductivity versus temperature curve exists atT=T _m. The conductivity was observed to follow aT ^1/2 law forT<T _m andT ² law forT>T _m. Magnetoconductivity data of these alloys indicate the prominence of electron-electron interaction at low temperatures. The authors have determined the inelastic scattering field and spin-orbit scattering field from the magnetoconductivity data. The inelastic scattering field obeys aT ^p law (p=2) at low temperatures.     

Electron transport properties of Co71−xFexCr7Si8B14 (x=0, 2, 3.2, 4, 6,8 and 12 at%) amorphous alloys during devitrification

The investigation addresses the electron transport properties of Co_71−xFe_xCr₇Si₈B₁₄ (x=0, 2, 3.2, 4, 6, 8 and 12 at%) amorphous alloys. The variation in electrical resistivity of as-cast amorphous materials with thermal scanning from room temperature to 1000 K was measured. The CoFe-based alloys revealed an initial decrease in temperature coefficient of resistivity (TCR), a characteristic of spin-wave phenomena in glassy metallic systems. This behaviour in the present alloys was in a sharp contrast to the Co-based amorphous materials that indicate the drop in resistivity much below room temperature. In the studied alloys, the variation in initial TCR values and the full-width at half-maxima determined from X-ray diffraction of as-quenched materials exhibited a similar trend with increasing Fe content, indicating the compositional effect of near neighbouring atoms. After the initial decrease in resistivity, all the alloys indicated a subsequent increase at T_min. The Curie temperature (T_C), which was measured from thermal variation of ac susceptibility showed non-monotonic change with Fe content. In the temperature range between T_min and T_C the relative scattering by electron-magnon and electron-phonon resulted in the non-monotonic change in Curie temperature. At crystallization onset (T_X1) all the alloys except there with X=6, showed a sharp decrease in electrical resistivity which was attributed to ordering phenomena. In contrast to this resistivity decrease, X=6 alloy exhibited a drastic increase in resistivity around T_X1 observed during amorphous to nanocrystalline transformation. Such nanocrystalline state was observed by Transmission electron microscopy.     

Magnetic field dependence of conductance and conduction noise of an artificial grain boundary junction in a La0.67Ba0.33MnO3 epitaxial thin film

A single artificial grain boundary in La_0.67Ba_0.33MnO₃ (LBMO) thin film has been prepared by depositing the film on a bicrystal substrate using laser ablation technique. We investigated the magnetic field dependence of magnetoresistance and conductance-voltage characteristics of the grain boundary at 77 K. A decrease of nonlinearity of current-voltage characteristics was observed upon application of magnetic field. The results are explained by assuming the presence of two different types of parallel conducting channels (metallic and highly resistive) across the grain boundary. The analysis of the results reveals that the application of magnetic field suppresses magnetic disorders at the grain boundary region and increases metallic conduction channels across the grain boundary. The temperature dependence of the conduction noise of the bicrystal grain boundary was measured at 0 and 1.5 kG magnetic field and compared with a microbridge on the LBMO film having no grain boundary. The presence of the grain boundary was found to enhance noise by one order of magnitude. The noise of a bicrystal grain boundary showed a decrease in the presence of 1.5 kG magnetic field for T<210 K. This decrease of noise confirms that the application of a magnetic field induces more metallic channels across the grain boundary.     

On the coexistence of spin and lattice polarons in the La0.67−xEuxCa0.33MnO3 CMR system

The electrical and magnetic transport properties of the La_0.67−xEu_xCa_0.33MnO₃ system exhibit lowering of insulator to metal and paramagnetic to ferromagnetic transition temperature (T_C) with the increase of Eu concentration in addition to possessing CMR property. The temperature variation of electrical resistivity and magnetic susceptibility for x=0.21 is found to have two distinct regions in the paramagnetic state for T>T_P; one with the localization of lattice polaron in the high-temperature region (T>1.5T_P) satisfying the dynamics of variable range hopping (VRH) model and the other being the combination of the spin and lattice polarons in the region T_P<T<1.5T_P. The resistivity variation with temperature and magnetic field, the cusp in the resistivity peak and CMR phenomenon are interpreted in terms of coexistence of spin and lattice small polarons in the intermediate region (T_P<T<1.5T_P). The spin polaron energy in the La_0.46Eu_0.21Ca_0.33MnO₃ system is estimated to be 106.73±0.90 meV and this energy decreases with the increase of external magnetic field. The MR ratio is maximal with a value of 99.99% around the transition temperature and this maximum persists till T→0 K, at the field of 8 T.     

Electrical and thermal properties of Pr2/3(Ba1−xCsx)1/3MnO3 manganites

Electrical and thermal properties of Pr_2/3(Ba_1?x Cs _x )_1/3MnO₃ (0 ≤ x ≤ 0.25) manganite perovskites are reported here. Two insulator-metal (I-M) transitions (T _P1 &T _P2) are observed in the electrical resistivity (ρ) of the pristine Pr_2/3Ba_1/3MnO₃ (PBMO) sample, and they are systematically shifted to lower temperatures with increasing Cs substitution. An upturn in ρ is noticed below 50 K in these perovskites, presumably due to the combined effect of weak localization, electron-electron and electron-phonon scattering. It is found that the absolute value of room-temperature thermoelectric power (TEP) gradually decreases with increasing Cs content, implying the annihilation of the charge carriers with doping. An analysis of the electrical resistivity and thermoelectric power data indicates that the paramagnetic insulating state above T _P1 is governed by the small polaron hopping due to a non-adiabatic process. It is argued that the electron-magnon scattering processes are responsible for low temperature metallic behavior of TEP. A distinct specific heat peak below T _P1 is observed, attributed to the magnetic ordering, and its broadening with Cs-doping corresponds to the increase of magnetic inhomogeneity. Further, the temperature variation of thermal conductivity and the low temperature plateau in κ has been associated with the delocalization of Jahn-Teller polarons and transition from Umklapp scattering to a defect-limited scattering, respectively.     

Structural, magnetic and magnetotransport behavior of some Nd-based perovskite manganites

A systematic investigation of Neodymium based colossal magnetoresistive manganites with general formula Nd_0.67A_0.33MnO₃, (A=Ca, Sr, Pb and Ba) has been undertaken mainly to understand their structural, magnetic as well as electrical behavior. The materials were prepared by the sol-gel route sintering at 900 °C. After usual characterization of the materials structurally by XRD, their metal-insulator transition (T_P) as well as magnetic transition (T_C) temperatures were determined and the reasons for the occurrence of ΔT_T(T_C-T_P) values have been explained. X-ray data have been analyzed by using Rietveld analysis and the variations of various parameters are explained. It has been concluded that not only A-site cation radius, 〈r_A〉 but also the size variance factor (σ²) influence both the metal-insulator as well as ferro to para magnetic transition temperatures. A systematic study of electrical conductivity of all the four materials was undertaken as a function of magnetic field upto 7 T mainly to understand the conduction mechanism in the presence of magnetic field. On analyzing the electrical resistivity data, it has been concluded that the metallic (ferromagnetic) part of the resistivity (ρ) (below T_P) can be explained by electron-electron scattering processes (∼T²) and two magnon scattering processes (∼T^4.5), while in the high temperature (T>T_P) paramagnetic insulating regime, the adiabatic small polaron and variable range hopping models are found to fit well.     

Thermoelectric properties of sol-gel derived cobaltite Bi2Ca2.4Co2Oy

Layered misfit cobaltite Bi₂Ca_2.4Co₂O_y has been synthesized by a sol-gel method. This compound exhibits large thermoelectric (TE) power (S_300 K∼170 μV K⁻¹), low resistivity (ρ_300 K∼42 mΩ cm) and relatively small thermal conductivity (κ_300 K∼2.8 W K⁻¹ m⁻¹) at room temperature. Furthermore, the resistivity of this compound displays a metallic behavior above T^?∼150 K with a semiconducting behavior below this temperature. This abnormal behavior in resistivity is analogous to those observed in Sr and Ba based misfit cobaltites. The observed features of the TE have been discussed based on the narrow band model.     

Large negative magnetoresistance in thiospinel CuCrZrS4

We report on large negative magnetoresistance observed in ferromagnetic thiospinel compound CuCrZrS₄. The electrical resistivity increased with decreasing temperature according to the exp(T₀/T)^1/2, an expression derived from variable range hopping with strong electron-electron interaction. The resistivity under a magnetic field was expressed by the same form with the characteristic temperature T₀ decreasing with increasing magnetic field. Magnetoresistance ratio ρ(T,0)/ρ(T,H) is 1.5 for H=90 kOe at 100 K and increases divergently with decreasing temperature reaching 80 at 16 K. Results of magnetization measurements are also presented. A possible mechanism of the large magnetoresistance is discussed.     

Co-existence of giant magnetoresistance and large magnetocaloric effect near room temperature in nanocrystalline La0.7Te0.3MnO3

Sol-gel prepared nanocrystalline La_0.7Te_0.3MnO₃ has rhombohedral crystal structure (space group R3¯C) at room temperature and orders ferromagnetically at ∼280 K (T_C). A large magnetic entropy change of ∼12.5 J kg⁻¹ K⁻¹ is obtained near T_C for a field change of 50 kOe. This magnetocaloric effect could be explained in terms of Landau theory. The temperature dependence of electrical resistivity shows metal-insulator transition at T_C and a giant magnetoresistance of ∼52% in 50 kOe. The co-existence of giant magnetoresistance and large magnetocaloric effect near room temperature makes nanocrystalline La_0.7Te_0.3MnO₃ a promising material for magnetic refrigeration and spintronic device applications.     

Low temperature magnetoresistance in La1.32Sr1.68Mn2O7 layered manganite under hydrostatic pressure

The La_1.32Sr_1.68Mn₂O₇ layered manganite system has been studied by the low temperature electrical resistance and magnetoresistance under hydrostatic pressure up to 25 kbar. We have observe both, a Curie temperature (T_C) and a metal-insulator transition (T_MI) at 118 K in the ambient pressure. The applied pressure shifts the T_MI to higher temperature values and induces a second metal-insulator transition (T²_MI) at 90 K, in the temperature dependence of resistivity measurements. Also, the pressure suppresses the peak resistance abruptly at T_C. When an external field of 5 T is applied, we have observed a large negative magnetoresistance of 300% at the transition temperature and a 128% at 4.5 K. However, the increased pressure decreases the magnetoresistance ratio gradually. When the pressure reaches its maximum available value of 25 kbar, the magnetoresistance ratio decreases at a rate of 1.3%/kbar. From our experimental results, the decrease of magnetoresistance ratio with pressure is explained by the pressure induced canted spin state which is not favor for the spin polarized intergrain tunneling in layered manganites.     

Influence of the low Mn intercalation on magnetic and electronic properties of 2H-TaS2 single crystals

The low-Mn-intercalated compounds 2H-Mn_xTaS₂ (x≤0.1) single crystals were successfully grown via the iodine chemical vapor transport technique; the electrical and magnetic properties have been investigated systematically. No signs of charge density wave and superconductivity transitions appear down to 2 K even when x=0.02, while a small resistivity upturn has been observed in the low-temperature region for Mn_xTaS₂ samples. A substantial magnetocrystalline anisotropy is observed and the Mn magnetic moments lie mainly parallel to the ab-plane. The glass behavior was observed in the low-temperature region firstly from the ac susceptibility measurement, the freezing of the glass may contribute to the upturn of the resistivity.     

Structural and electrical transport properties of Nb-doped TiO2 films deposited on LaAlO3 by rf sputtering

We have investigated the structural and electrical transport properties of Nb-doped TiO₂ films deposited on (1 0 0) LaAlO₃ substrates by rf magnetron sputtering at temperatures ranging from 873 K to 1073 K. Films deposited below 998 K are anatase, and mixed phases between anatase and rutile exist in the film grown at higher temperatures. We find that films deposited at low temperatures exhibit semiconductor behavior, while metallic conductivity is observed in the most conducting film deposited at 998 K. For this sample, compared to electron-phonon scattering mechanism, electron-phonon-impurity interference effect plays an important role in its electron transport process. Moreover, the temperature coefficient of the resistivity for the film deposited at 1073 K is negative from 2 K to 300 K. The temperature dependence of resistivity for the film is described by ∼exp(b/T)^1/2 at temperatures from 80 K down to 30 K, and by the fluctuation induced tunneling model from 80 K to 300 K.