Electronic excitations and defects in nanostructural Al<Subscript>2</Subscript>O<Subscript>3</Subscript>

A time-resolved cathodo-and photoluminescence study of nanostructural modifications of Al₂O₃ (powders and ceramics) excited by heavy-current electron beams, as well as by pulsed synchrotron radiation, is reported. It was found that Al₂O₃ nanopowders probed before and after Fe⁺ ion irradiation have the same phase composition (the γ-phase/δ-phase ratio is equal to 1), an average grain size equal to ～17 nm, and practically the same set of broad cathodoluminescence (CL) bands peaking at 2.4, 3.2, and 3.8 eV. It was established that Al₂O₃ nanopowders exhibit fast photoluminescence (PL) (a band at 3.2 eV), whose decay kinetics is described by two exponential stages (τ₁ = 0.5 ns, τ₂ = 5.5 ns). Three bands, at 5.24, 6.13, and 7.44 eV, were isolated in the excitation spectrum of the fast PL. Two alternate models of PL centers were considered, according to which the 3.2-eV luminescence either originates from radiative relaxation of the P^? centers (anion-cation vacancy pairs) or is due to the formation of surface analogs of the F⁺ center (F _S ⁺ -type centers). In addition to the fast luminescence, nano-Al₂O₃ was found to produce slow luminescence in the form of a broad band peaking at 3.5 eV. The excitation spectrum of the 3.5-eV luminescence obtained at T = 13 K exhibits two doublet bands with maxima at 7.8 and 8.3 eV. An analysis of the luminescent properties of nanostructural and single-crystal Al₂O₃ suggests that the slow luminescence of nanopowders at 3.5 eV is due to radiative annihilation of excitons localized near structural defects.     

Electronic excitations in BeAl<Subscript>2</Subscript>O<Subscript>4</Subscript>, Be<Subscript>2</Subscript>SiO<Subscript>4</Subscript>, and Be<Subscript>3</Subscript>Al<Subscript>2</Subscript>Si<Subscript>6</Subscript>O<Subscript>18</Subscript> crystals

Low-temperature (T = 7 K) time-resolved selectively photoexcited luminescence spectra (2–6 eV) and luminescence excitation spectra (8–35 eV) of wide-bandgap chrysoberyl BeAl₂O₄, phenacite Be₂SiO₄, and beryl Be₃Al₂Si₆O₁₈ crystals have been studied using time-resolved VUV spectroscopy. Both the intrinsic luminescence of the crystals and the luminescence associated with structural defects were assigned. Energy transfer to impurity luminescence centers in alexandrite and emerald was investigated. Luminescence characteristics of stable crystal lattice defects were probed by 3.6-MeV accelerated helium ion beams.     

X-ray diffraction and calorimetric studies of powder nanocrystalline systems based on ZrO<Subscript>2</Subscript>(Y) and Al<Subscript>2</Subscript>O<Subscript>3</Subscript> with second insoluble component

Four nanocrystalline ZrO₂(Y)- and Al₂O₃-based powders synthesized by plasma spray pyrolysis have been studied. It has been shown that the ZrO₂(3Y)-based system with second component Al₂O₃ forms a nonequilibrium solid solution ZrO₂(3Y, Al) with the tetragonal structure. It has been found that the existence of an component (ZrO₂(Y)) insoluble in the coarse-grained state in Al₂O₃-based systems causes the delay of the γ → α transformation and decreases the size of the coherently scattering domains of formed nanosized modifications of Al₂O₃.     

Phase composition and structure of nanocrystalline powders based on ZrO<Subscript>2</Subscript>(Y) and Al<Subscript>2</Subscript>O<Subscript>3</Subscript> obtained by plasma spray pyrolysis

It is shown that a nonequilibrium solid solution ZrO₂(3Y, Al) with tetragonal structure is formed in systems based on ZrO₂(3Y) with Al₂O₃ as a second component. A delay in the γ → α Al₂O₃ transformation and a reduction in the size of the coherently scattering domain of modifications are observed in systems based on Al₂O₃ with ZrO₂(Y) as a second component.     

Luminescence and electronic excitations in crystals K<Subscript>2</Subscript>Al<Subscript>2</Subscript>B<Subscript>2</Subscript>O<Subscript>7</Subscript> with defects

This paper reports on the results of the comprehensive study of the dynamics of electronic excitations in K₂Al₂B₂O₇ (KABO) crystals, obtained by low-temperature luminescence vacuum ultraviolet spectroscopy with nanosecond time resolution upon photoexcitation by synchrotron radiation. For the first time, the data have been obtained on the photoluminescence (PL) decay kinetics, PL spectra with time resolution, PL excitation spectra with time resolution, and reflection spectra at 7 K; the intrinsic nature of PL at 3.28 eV has been established; luminescence bands of defects have been separated in the visible and ultraviolet spectral regions; an intense long-wavelength PL band has been detected at 1.72 eV; channels of the formation and decay of electronic excitations in K₂Al₂B₂O₇ crystals have been discussed.     

Evolution of MgAl<Subscript>2</Subscript>O<Subscript>4</Subscript> crystals in Al-Mg-SiO<Subscript>2</Subscript> composites

The present study analyzes the morphological transformations of reaction products i.e., MgO, MgAl₂O₄ occurring during the reaction between SiO₂ and Al-Mg alloy in Al-Mg-SiO₂ composite processed by the liquid metallurgy technique. Different phases of platelet and hexagonal morphologies are detected and their composition analysis by EDS has confirmed them as being transition phases existing between MgO, MgAl₂O₄ and Al₂O₃. This study has also revealed the gradual transformation of (i) MgO needles to octahedral MgAl₂O₄ through Mg-Al-Si-O and Mg-Al-O transition phases having platelet morphologies and (ii) MgAl₂O₄ to Al₂O₃ through hexagonal transition phases on holding of Al-5Mg-SiO₂ and Al-1Mg-SiO₂ composites respectively at 1023K. Fully developed α-Al₂O₃ crystals are not observed under the present experimental conditions, wherein the Mg content is well above the equilibrium Mg content required for the formation of stable Al₂O₃ (<0.05 wt. %). PACS 05.70.Np     

Synthesis of ZnAl<Subscript>2</Subscript>O<Subscript>4</Subscript>/α-Al<Subscript>2</Subscript>O<Subscript>3</Subscript> complex substrates and growth of GaN films

With the solid phase reaction between pulsed-laser-deposited (PLD) ZnO film and α-Al₂O₃ substrate, ZnAl₂O₄/α-Al₂O₃ complex substrates were synthesized. X-ray diffraction (XRD) spectra show that as the reaction proceeds, ZnAl₂O₄ changes from the initial (111)-oriented single crystal to poly-crystal, and then to inadequate (111) orientation. Corresponding scanning electron microscope (SEM) images indicate that the surface morphology of ZnAl₂O₄ transforms from uniform islands to stick structures, and then to bulgy-line structures. In addition, XRD spectra present that ZnAl₂O₄ prepared at low temperature is unstable at the environment of higher temperature. On the as-obtained ZnAl₂O₄/α-Al₂O₃ substrates, GaN films were grown without any nitride buffer using light-radiation heating low-pressure MOCVD (LRH-LP-MOCVD). XRD spectra indicate that GaN film on this kind of complex substrate changes fromc-axis single crystal to poly-crystal as ZnAl₂O₄ layer is thickened. For the single crystal GaN, its full width at half maximum (FWHM) of X-ray rocking curve is 0.4°. Results indicate that islands on thin ZnAl₂O₄ layer can promote nucleation at initial stage of GaN growth, which leads to the (0001)-oriented GaN film.     

Spectral and kinetic characteristics of CdI<Subscript>2</Subscript> and CdI<Subscript>2</Subscript>:Pb scintillators

We have studied the effect of lead dopant on the optical absorption, photoluminescence, and x-ray luminescence spectra, and the scintillation characteristics of CdI₂ at room temperature. The crystals for the study were grown by the Stockbarger-Bridgman method. Activation of CdI₂ from the melt by the compound PbI₂ leads to the appearance in the absorption spectra in the near-edge region of an activator band at 395–405 nm, which is interpreted as an A band connected with electronic transitions from the ¹S₀ state to the ³P₁ levels in the Pb²⁺ ion. For x-ray excitation, CdI₂:Pb²⁺ crystals with optimal dopant concentration (∼1.0 mol%) are characterized by a light yield with maximum in the 570–580 nm region that is an order of magnitude higher than for CdI₂ crystals in the 490–500 nm band. For α excitation, the radioluminescence kinetics for cadmium iodide is characterized by a very short (∼0.3 nsec) rise time and fast decay of luminescence, with τ₁ ≈ 4 nsec and τ₂ = 10–76 nsec. Depending on the conditions under which the crystals were obtained, the fast component fraction is 95%–99%. The crystal is characterized by a similar scintillation pulse in the case of excitation by x-ray pulses. The radioluminescence pulse shape for CdI₂:Pb in the decay stage is predominantly exponential, with luminescence decay time constants τ₁ ≈ 10 nsec and τ₂ = 200–250 nsec. This system is characterized by low afterglow, at the level for the Bi₄G₃O₁₂ scintillator. We have demonstrated the feasibility of using CdI₂:Pb as a scintillator for detecting α particles. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 6, pp. 825–830, November–December, 2008.     

Luminescence properties of transparent ceramics Y<Subscript>3</Subscript>Al<Subscript>5</Subscript>O<Subscript>12</Subscript>:Yb

We present the results of studying the luminescence properties of transparent ceramics Y₃Al₅O₁₂:Yb obtained by the vacuum sintering and nanocrystalline technology. In the course of research, we measured the luminescence and luminescence excitation spectra, as well as the temperature and kinetic behavior of luminescence. Our results are analyzed in comparison with the characteristics of corresponding single crystals. We revealed that processes of generation and relaxation of electronic excitations that occur in ceramics, in particular, in the charge transfer state, are similar to processes occurring in crystals. The behavior of two charge-transfer luminescence bands at 340 and 490 nm is studied. In the range 300–600 nm, we revealed a broad emission band of radiation of other type, which is also observed in spectra of undoped ceramics. This broad band is attributed to F⁺ centers. Emission and excitation spectra of charge transfer luminescence at a maximum of the temperature dependence of 100 K are measured for the first time. We found that, upon excitation in the charge transfer band, luminescence in ceramics is more intense than in single crystals with similar concentrations of Yb and has a higher quenching temperature.     

Photo- and thermostimulated processes in α-Al2O3

We reported on the recombination processes determined by the release of electrons from defects connected with the dosimetric 430 K thermostimulated luminescence (TSL) peak as well as with the 260 K TSL peak. These TSL peaks appear in thermochemically reduced α-Al₂O₃ crystals containing hydrogen and emission of these TSL peaks corresponds to luminescence of the F-center. The X-ray exposure or UV excitation in the absorption band of F-centers at 6.0 eV of reduced α-Al₂O₃ crystals doped with acceptor impurities results in the appearance of a broad anisotropic complex absorption band in the spectral region 2.5–3.5 eV and in the appearance of a predominant TSL peak at 430 K. Above 430 K the above-mentioned broad absorption band disappears. Optical bleaching of the 2.5–3.5 eV band is accompanied by the disappearance of the 430 K TSL peak and results in F-center emission. The X-ray or UV excitation of reduced α-Al₂O₃ crystals with donor-type impurities results in the appearance of an anisotropic absorption band at 4.2 eV and the appearance of a dominant TSL peak at 260 K. Above 260 K the 4.2 eV absorption disappears and photostimulated luminescence (PSL) of the F-center recombination luminescence in the 4.2 eV region is no longer observed. Optical bleaching of the 4.2 eV absorption band is accompanied by the disappearance of the 260 K TSL peak. The successful use of reduced α-Al₂O₃ in dosimetry needs the optimization of the concentration of all components (acceptors, hydrogen, intrinsic defects) involved in the thermo- and photostimulated processes.     

Metallic liquid hydrogen and likely Al<Subscript>2</Subscript>O<Subscript>3</Subscript> metallic glass

Dynamic compression has been used to synthesize liquid metallic hydrogen at 140 GPa (1.4 million bar) and experimental data and theory predict Al₂O₃ might be a metallic glass at ∼ 300 GPa. The mechanism of metallization in both cases is probably a Mott-like transition. The strength of sapphire causes shock dissipation to be split differently in the strong solid and soft fluid. Once the 4.5-eV H-H and Al-O bonds are broken at sufficiently high pressures in liquid H₂ and in sapphire (single-crystal Al₂O₃), electrons are delocalized, which leads to formation of energy bands in fluid H and probably in amorphous Al₂O₃. The high strength of sapphire causes shock dissipation to be absorbed primarily in entropy up to ∼400 GPa, which also causes the 300-K isotherm and Hugoniot to be virtually coincident in this pressure range. Above ∼400 GPa shock dissipation must go primarily into temperature, which is observed experimentally as a rapid increase in shock pressure above ∼400 GPa. The metallization of glassy Al₂O₃, if verified, is expected to be general in strong oxide insulators. Implications for Super Earths are discussed.     

Luminescence characteristics of the Pr<Superscript>3+</Superscript> ion in SrB<Subscript>4</Subscript>O<Subscript>7</Subscript> and SrB<Subscript>6</Subscript>O<Subscript>10</Subscript>

Spectral and kinetic characteristics of the luminescence and luminescence excitation spectra of polycrystalline SrB₄O₇:Pr (1%) and SrB₆O₁₀:Pr (1%) samples are studied at 150–170 K. The samples show an intense luminescence band in the vicinity of 405 nm (¹ S ₀→¹ I ₆ transitions of Pr³⁺) and shorter wavelength bands also assigned to transitions from the ¹ S ₀ level. The main luminescence decay constant is ～2×10^?7 s. The excitation spectra of the ¹ S ₀ luminescence in these crystals are significantly different. The SrB₄O₇:Pr crystal shows three well-resolved bands at 6.14, 6.55, and 6.91 eV in the region of the 4f ²→4f ¹5d transitions and a complex structure in the region of interband transitions (7.1–20 eV), whereas the SrB₆O₁₀:Pr crystal shows a weakly structured band at 6.31 eV and no excitation in the region of the interband transitions. The physical mechanisms that may be responsible for the observed features of the spectra are discussed.     

Luminescence and selective heat radiation of Yb<Subscript>2</Subscript>O<Subscript>3</Subscript> upon the resonant and thermal laser excitation

Yb₂O₃ polycrystals with a size of up to 10 mm are synthesized using the sintering and melting of the ultrapure Yb₂O₃ powders by the CO₂-laser radiation with the power P _L ≤ 100 W at the wavelength λ = 10.6 μm at the melting point T _m = 2703 K, forming due to surface tension in melt, and crystallization in air. The analysis of the polycrystal microstructure using the methods of optical and electron microscopy and X- ray diffractometry shows that perfect oxide crystallites are formed in the course of crystallization after melting-through. The transformation of the luminescence and selective heat radiation (SHR) spectra of the Yb₂O₃ polycrystals is studied under the resonant excitation at λ ≈ 975 nm using a laser diode and the laser heating at the wavelength λ = 10.6 μm. When the resonant excitation power of the Yb³⁺ ions increases from 0.15 to 4.5 W, the Stokes luminescence of the Yb₂O₃ polycrystals is sequentially transformed into SHR and the thermal radiation of the crystal lattice. The transformation of the emission spectra of the Yb₂O₃ polycrystals with an increase in the laser heating intensity by about four orders of magnitude can be represented as the low-temperature heat radiation, spectral burst of the thermodynamically nonequilibrium SHR of the Yb³⁺ ions, and the high-temperature radiation of the crystal lattice. The temperature dependence of the luminescence spectra and SHR of the Yb₂O₃ polycrystals on the intensity of the laser and laser-thermal excitation and the concentration quenching of the Yb³⁺ luminescence in oxides indicate the key role of the interaction of the f-electron shell of the Yb³⁺ ions with the natural oscillations of the crystal lattice in the processes of the multiphonon excitation and nonradiative (multiphonon) and radiative (vibronic) relaxation.     

Luminescence and electronic excitations in KBe<Subscript>2</Subscript>BO<Subscript>3</Subscript>F<Subscript>2</Subscript> crystals

This paper reports on a study of the dynamics of electronic excitations in KBe₂BO₃F₂ (KBBF) crystals by low-temperature luminescent vacuum ultraviolet spectroscopy with nanosecond time resolution under photoexcitation by synchrotron radiation. The first data have been obtained on the kinetics of photoluminescence (PL) decay, time-resolved PL spectra, time-resolved PL excitation spectra, and reflection spectra at 7 K; the estimation has been performed for the band gap E _g = 10.6−11.0 eV; the predominantly excitonic mechanism for PL excitation at 3.88 eV has been identified; and defect luminescence bands at 3.03 and 4.30 eV have been revealed. The channels of generation and decay of electronic excitations in KBBF crystals have been discussed.     

Preparation of alumina nanowires, nanorods, and nanowalls by chemical etching

Alumina (Al₂O₃) nanowires, nanorods, and nanowalls have been prepared from anodic aluminum oxide (AAO) templates by chemical etching in NaOH solution. Heating the template prior to etching is crucial to the morphology of subsequent prepared alumina nanostructures, which greatly depend on the phases of the AAO templates. It has been found that the templates with amorphous Al₂O₃, γ-Al₂O₃, and α+γ-Al₂O₃ phases will grow nanowires, nanorods, and nanowalls, respectively. A possible mechanism for forming different alumina nanostructures is proposed.     

A study of nanostructures formed in the hydrogen reduction of Fe(OH)<Subscript>3</Subscript>

A complex study of the hydrogen reduction of nanosized iron hydroxide Fe(OH)₃ at 400°C was performed. It was shown that, during the reduction of Fe(OH)₃ to iron metal α-Fe, intermediate compounds such as Fe(OH)₂, α-FeOOH, β-FeOOH, γ-FeOOH, δ-FeOOH, and FeO are formed along with stable iron oxides α-Fe₂O₃, γ-Fe₂O₃, and Fe₃O₄. A scheme of chemical and structural transformations that occur in the reduction of nanosized Fe(OH)₃ is presented. The scheme takes into account the possibility of the bifurcation mechanism of reaction development.     

Investigation on structural characteristics of PVDF–AgCF<Subscript>3</Subscript>SO<Subscript>3</Subscript>–Al<Subscript>2</Subscript>O<Subscript>3</Subscript> nanocomposite solid polymer electrolyte system

There has been an increasing interest towards the incorporation of nanosize ceramic fillers in polymer electrolytes. Solid polymer electrolytes based on polyvinylidene fluoride (PVDF), silver triflate (AgCF₃SO₃), and x wt% of aluminum oxide (Al₂O₃) nanopowders (where x = 1, 3, 5, and 10, respectively) have been prepared using solution casting technique. The structural characteristics of these thin film specimens were studied using Fourier transform infrared (FTIR) and X-ray diffraction (XRD) patterns at room temperature. The appearance of new absorption bands and gradual shifts observed in some characteristic peaks confirmed the complex formation between polyvinylidene fluoride and silver triflate. Furthermore, the addition of nanosized filler Al₂O₃ has also indicated the interaction of the filler with the polymer salt complex. The XRD patterns obtained for all these samples in the 2θ range 10° to 70° showed the amorphous nature of these samples. Paper presented at the Third International Conference on Ionic Devices (ICID 2006), Chennai, Tamilnadu, India, December 7–9, 2006.     

Luminescence and electronic excitations in Li<Subscript>6</Subscript>Gd(BO<Subscript>3</Subscript>)<Subscript>3</Subscript>: Ce<Superscript>3+</Superscript> crystals

This paper reports on a study of the luminescence emitted by Li₆Gd(BO₃)₃: Ce³⁺ crystals under selective photoexcitation to lower excited states of the host ion Gd³⁺ and impurity ion Ce³⁺ within the 100–500-K temperature interval, where the mechanisms of migration and relaxation of electronic excitation energy have been shown to undergo noticeable changes. The monotonic 10–15-fold increase in intensity of the luminescence band at 3.97 eV has been explained within a model describing two competing processes, namely, migration of electronic excitation energy over chains of Gd³⁺ ions and vibrational energy relaxation between the ⁶ I _j and ⁶ P _j levels. It has been shown that radiative transitions in Ce³⁺ ions from the lower excited state 5d ¹ to ² F _5/2 and ² F _7/2 levels of the ground state produce two photoluminescence bands, at 2.08 and 2.38 eV (Ce1 center) and 2.88 and 3.13 eV (Ce2 center). Possible models of the Ce1 and Ce2 luminescence centers have been discussed.     

Dynamics of ions produced by laser ablation of ceramic Al<Subscript>2</Subscript>O<Subscript>3</Subscript> and Al at 193 nm

We study the dynamics of ions produced upon ablation of Al and ceramic Al₂O₃ targets using nanosecond laser pulses at 193 nm (6.4 eV) as a function of the laser fluence from threshold up to 12 J cm⁻². An electrical (Langmuir) probe located at 40 mm from the target surface has been used for determining the ion yield and calculating the kinetic energy distributions. The results for both targets show the existence of a significant amount of ions having kinetic energies >200 eV (≈20% around threshold fluence), and kinetic energies are up to >1.5 keV. The results are related with the existence of direct photonionization processes caused by the photon energy of the laser being higher than the ionization potential of Al (5.98 eV). Comparison of the ion yield when ablating the two types of targets for fluences above threshold to data reported in the literature suggests that the magnitude of the yield and its threshold are parameters depending on the thermal properties of the target rather than on the laser wavelength. Around threshold, the different behavior of ion yield when ablating Al and Al₂O₃ targets suggests that the threshold for neutral aluminium and ion species in the case of ablation of the Al₂O₃ target must be similar.     

Nonradiative relaxation of photoexcited O<Stack><Subscript>1</Subscript><Superscript>0</Superscript></Stack> centers in glassy SiO<Subscript>2</Subscript>

The processes involved in the excited-state relaxation of hole O ₁ ⁰ centers at nonbridging oxygen atoms in glassy SiO₂ were studied using luminescence, optical absorption, and photoelectron emission spectroscopy. An additional nonradiative relaxation channel, in addition to the intracenter quenching of the 1.9-eV luminescence band, was established to become operative at temperatures above 370 K. This effect manifests itself in experiments as a negative deviation of the temperature-dependent luminescence intensity from the well-known Mott law and is identified as thermally activated external quenching with an energy barrier of 0.46 eV. Nonradiative transitions initiate, within the external quenching temperature interval, the migration of excitation energy, followed by the creation of free electrons. In the final stages, this relaxation process becomes manifest in the form of spectral sensitization of electron photoemission, which is excited in the hole O ₁ ⁰ -center absorption band.