均匀外场中扩散控制聚集集团标度性质的实验

本文采用无分岔扩散控制聚集(DLA)模型,利用计算机模拟均匀外场中微小颗粒的不可逆生长过程,发现均匀外场的存在将改变生长集团的标度性质。对在均匀外场中生长的DLA,集团的豪斯道夫维数D与均匀外场F之间存在函数关系:D=2.50F^0.37exp(-1.08F)+1。 关键词：     

外场形式对超冷原子-多聚物分子转化效率的影响

通过改变激光场Rabi频率和原子-多聚物分子耦合强度, 探索了外场形式对超冷原子-多聚物分子转化效率的影响. 首先通过定义时间指数, 对文献所给出的外场做出改进, 讨论了时间指数对转化效率的影响; 然后选取一种更优化的外场形式, 其具有很好的参数鲁棒性, 该外场作用下的绝热过程几乎不存在振荡, 其绝热保真度接近于1, 系统误差较小, 可以稳定、高效地实现超冷原子-多聚物分子的转化. 关键词： 超冷多聚物分子 转化效率 外场形式 绝热保真度     

异质外延生长中应变对圆形岛形貌稳定性的影响

本文利用BCF模型研究了应变对圆形岛形貌稳定性的影响. 通过Gibbs-Thomson关系将应变引入该模型中,讨论了在失配应变、外场应变以及沉积流量、线张力和远场流量等因素共同作用下圆形岛的稳定性,并得到了相应的扰动增长率以及临界沉积流量. 研究结果表明：较大的失配应变和远场流量都能促进岛在生长过程中失稳,而线张力可以抑制岛的失稳. 随着岛的生长,岛的半径越大越趋于稳定,当岛生长到临界半径后,临界沉积流量随着失配应变的增大而增大. 在外场应变存在的情况下,外场负应变对岛的生长起稳定作用并使临界沉积流量减小;相反,正应变促进岛的失稳,且使临界流量增大. 这些结论对在薄膜生长过程中控制原子岛的形貌及其稳定性提供了重要的理论依据. 关键词： 形貌稳定性 失配应变 外场应变 圆形岛     

非局域Lai-Das Sarma-Villain方程动力学标度性质的研究

使用动力学重整化群和直接标度分析的方法研究了非局域Lai-Das Sarma-Villain方程的动力学标度性质.动力学重整化群分析表明非局域非线性项的存在能够导致新的固定点和连续变化的动力学标度指数的产生.使用直接标度分析方法则分别得到了在弱耦合和强耦合区内的标度指数值.在弱耦合区域内得到的标度指数与动力学重整化方法得到的标度指数值能很好地吻合. 关键词： 表面生长 动力学重整化群分析 标度分析     

介质极化的瞬时相位与振幅

求解电子运动的二阶微分方程，在旋转波近似下，介质在外场突然变化时产生的瞬态感应极化与外场同频，但相位总是落后，最大落后为π/2；振幅大小与初态有关，随时间按指数规律衰减，衰减快慢由介质的阻尼系数决定。     

外场中DLA集团标度性质的解析研究

我们利用“连续化近似”的平均场理论,详细研究了在不同外场作用下DLA集团的标度性质。发现对常值外场,集团密度ρ初始时按1/r变化,然后过渡到一个常数值;而对1/r^α类型的外场。当控制参数α变化时,生长集团表现出非常复杂的、非平庸的标度行为。 关键词：     

光谱辐射照度量值复现中计算大口径固定点黑体拐点温度的新方法

我国光谱辐射照度基准量值复现的理论基础是普朗克定律,它揭示了波长、温度和光谱辐射照度之间存在着精确的定量关系。采用比较法、通过卤钨灯来进行光谱辐射照度量值的保存与传递。其中,黑体的温度测量在量值复现中是最主要的不确定来源。以往都是采用变温黑体作为量值复现的辐射源,其温度通过高温计溯源至温标固定点黑体。为满足我国对地观测、气象遥感、应对气候变化、海洋水色等领域对光谱辐射照度高精度的测量需求,中国计量科学研究院NIM建立了一套14 mm大口径钨碳-碳WC-C高温固定点黑体系统,作为基准辐射源直接复现光谱辐射照度量值,进一步缩短了量值溯源链,减少了温度测量误差。实验中高温计用来测量黑体的相对温度,采用固定点熔化温坪曲线的拐点POI值校准后得到温度绝对值。因此拐点POI的合理评估计算就十分重要。与小口径WC-C固定点黑体不同,大口径固定点的熔化温坪曲线的持续时间更长,但温度起伏也更大,因此广泛用于小口径固定点的传统拐点POI算法不再适用。提出了一种可筛选多次拟合法,用于计算大口径固定点黑体的拐点温度。采用3 mm小口径WC-C和Re-C固定点对新方法的有效性进行验证,结果表明新方法与三种传统方法的平均值的最大偏差为-0.007和-0.001 K,在500 nm引入的光谱辐射照度测量误差分别为0.002 2%和0.000 3%。进一步采用14 mm大口径WC-C大口径固定点对新方法的稳健性进行验证。分析比较了筛选条件、数据平滑处理、拟合范围对拐点POI计算结果的影响,新方法和三种传统POI计算方法的最大影响量分别为0.001和0.633 K,在500 nm引入的光谱辐射照度不确定度分别为0.000 3%和0.20%。所提出的新方法能够有效减小外界因素引入的温度误差,进一步提升光谱辐射照度量值的复现准确度,更适用于大口径高温固定点黑体拐点温度的计算。     

声空化外场对振荡流热管传热性能的影响

本文通过实验研究了声空化外场对振荡流热管传热性能的影响规律.声空化外场对振荡流热管传热性能有显著影响,在某些工况下声空化外场可以加速热管的启动,提高热管传热性能,但亦出现施加声空化外场反而削弱传热的现象.声空化外场对振荡流热管具有独特的作用,其特殊的规律,以及内、外场之间的耦合机制亟需进行更加深入的研究.     

基于大口径高温固定点黑体的光谱辐射照度国家基准量值复现新方法

采用国际前沿的大口径高温固定点黑体新技术,中国计量科学研究院NIM(National Institute of Metrology)组建了大口径钨碳-碳WC-C高温固定点黑体辐射源,在3 020.11 K的融化点温度,实现了250～2 500 nm光谱辐射照度、相关色温和分布温度基准的量值复现。这是国际上首次将大口径高温固定点黑体技术成功应用于光谱辐射度基准复现领域。针对大口径固定点黑体熔化温坪曲线的特点、以及测量期间温坪曲线中间部分缺失的问题,提出了固定点熔化温坪拐点温度计算新方法,重构了缺失的熔化温坪曲线。采用光谱比较法,通过双光栅光谱比较测量系统将黑体的量值传递至光谱辐射照度副基准灯组,完成光谱辐射照度基准量值的复现和保存。新的量值复现方法将黑体温度的测量不确定度减小为0.36 K,缩短了量传链,实现光谱辐射照度最佳测量不确定度0.25%(k=2)。在250～2 500 nm,基于固定点新方法和传统变温黑体法进行量值复现的平均偏差为0.42%,将两种方法相结合,最终实现我国光谱辐射照度基准的测量不确定度(k=2)为：250～400 nm,U_rel=1.9%～...     

弱外场对铁磁晶体定态磁化取向的影响分析

首先推出了铁磁晶体在弱外场作用下定态磁化参量,用斜率比较法分析了直接影响磁化取向的参量-平均场的取值情况,讨论了弱外场对定态磁化参量的影响机制,结果发现:①在弱外场较小时,系统与无外场时的情况类似,也有两个稳定取向和一个不稳定取向;如弱外场约大于自旋相互作用,则系统只有一个沿外场方向的稳定取向;②在外场比较弱的情况下,平均场可表示为外场的线性关系;③当平均场取下值点时,所有的N+和N-随弱外场变化的两条曲线相交于坐标轴的左边,磁化强度比的零点左移,外施磁场越大,交点越趋近于A点;当平均场取上值点时,所有的N+和N-随弱外场变化的两条曲线相交于坐标轴的右边,磁化强度比的零点右移,外施磁场越大,交点越趋近于A点.     

Surface-driven instability and enhanced relaxation in the dynamics of a nonequilibrium interface

We determine the stability of a nonequilibrium interface between two coexisting solid phases in the presence of a weak external field. Starting at the coarsegrained (Cahn-Hilliard) level, we use the method of matched asymptotics to derive the macroscopic interfacial dynamics. We then show that the external field leads to an instability due to flux along the interface, in contrast with the more common Mullins-Sekerka type instability, which involves fluxes normal to the interface. We also find that the external field produces an important modification of the Gibbs-Thomson relation. With these results, we perform the linear stability analysis for an approximately flat interface. If the field is tangent to the interface, the modification of the Gibbs-Thomson relation is important and the interface is stabilized. If the field is normal to the interface, the surface flux is important, and the effect can be stabilizing or destabilizing, but the orientational dependence is opposite what would be obtained if the Mullins-Sekerka instability dominates. Numerical simulations are performed to study the effect of the surface current and are in agreement with our analytical results.     

Nuclear spin manipulation in interfaces of diluted magnetic semiconductors

Nuclear spin manipulation using an interface of diluted magnetic semiconductors (DMSs) is proposed. On the basis of the first-principles electronic structure calculation, we show that the hyperfine fields at an impurity site in the interface between a DMS and a base substance is dramatically changed by an external electric field. The electric field dependence of the hyperfine fields at the impurity nucleus in the interface of (InMn)As and (GaMn)As is examined.     

Pressure influence on the Stark effect of impurity states in a strained wurtzite GaN/AlxGa1-xN heterojunction

A variational method is adopted to investigate the properties of shallow impurity states near the interface in a free strained wurtzite GaN/AlxGa1-xN heterojunction under hydrostatic pressure and external electric field by using a simplified coherent potential approximation. Considering the biaxial strain due to lattice mismatch or epitaxial growth and the uniaxial strains effects, we investigated the Stark energy shift led by an external electric field for impurity states as functions of pressure as well as the impurity position, Al component and areal electron density. The numerical result shows that the binding energy near linearly increases with pressure from 0 to 10 GPa. It is also found that the binding energy as a function of the electric field perpendicular to the interface shows an un-linear red shift or a blue shift for different impurity positions. The effect of increasing x on blue shift is more significant than that on the red shift for the impurity in the channel near the interface. The pressure influence on the Stark shift is more obvious with increase of electric field and the distance between an impurity and the interface. The increase of pressure decreases the blue shift but increases the red shift.     

Einstein Relation for a Class of Interface Models

 A class of SOS interface models which can be seen as simplified stochastic Ising model interfaces is studied. In the absence of an external field the long-time fluctuations of the interface are shown to behave as Brownian motion with diffusion coefficient given by a Green-Kubo formula. When a small external field h is applied, it is shown that the shape of the interface converges exponentially fast to a stationary distribution and the interface moves with an asymptotic velocity v(h). The mobility is shown to exist and to satisfy the Einstein relation: , where β is the inverse temperature. Received: 16 April 2002 / Accepted: 3 July 2002 Published online: 22 November 2002 RID="*" ID="*" Work partially supported by the N.S.F. through grants DMS-0071766 and DMS-0074152.     

Dynamics of excitons and carriers at the NPB/C60 interface by transient photocurrents

The transient photocurrent (TPC) technique was performed to explore the dynamics of excitons and carriers at organic active layer/buffer layer interfaces. A special device with ITO/PEIE/NPB/C₆₀/Al structure was designed to study the interfacial processes at the NPB/C₆₀ interface. An external electrical field was provided to neutralize the built-in electrical field of the device. Interestingly, a new phenomenon was observed, wherein the polarity of the TPC changed from negative to positive under an external electrical field. The initial negative signal was ascribed to exciton separation by the built-in field in C₆₀, and the subsequent positive signal can be attributed to the diffusion of electrons that accumulate at the NPB/C₆₀ interface. TPC measurements shown that further increasing the external electrical field causes polarity to change twice. Analyzing the two changes in polarity revealed that the NPB did not only extract holes from C₆₀ but also provided an effective interface for exciton dissociation.     

Numerical simulation of liquid phase electroepitaxial growth of GaInAs under magnetic field

Numerical simulations were carried out for the liquid phase electroepitaxial (LPEE) growth process of ternary alloy GaInAs under external magnetic field. The governing field equations together with appropriate interface and boundary conditions are solved numerically by the Finite Element Method for the growth cell configuration to be used in our laboratory. Results show the feasibility of suppressing the natural convection in the solution by the application of an external magnetic field. A field of 2rtesla is sufficient to reduce the effect of gravity significantly.     

Collective modes in a one-dimensional nonuniform fluid model

A one-dimensional fluid with short-range repulsive interaction and one period of cosinusoidal attraction in a periodic container is transformed to a two-mode format. The system has both high-temperature single-phase regions and lowtemperature two-phase regions with a very broad spatial interface that can be stabilized by a weak external field. The case of vanishing external field brings out properties of the mode amplitude dependence which one expects to extend to more complex systems.     

Influence of electric field annealing on atom diffusion in Cu/Ta/Si stacks

In this letter, we present a quantitative analysis of the influences caused by an electric field annealing on interface atom diffusion in a Cu/Ta/Si stack at a range of temperatures 450～650 °C. The results indicate that the external electric field has a remarkably accelerated effect on Cu atom diffusion in the Ta layer and the failure of Ta as the diffusion barrier. The preexponent D ₀ and the activation energy Q for Cu atom diffusion in the Ta layer were both decreased with the application of an external electric field. The activation energy for electric field annealed stacks is 1.22 eV, which is lower than that for annealed stacks (1.58 eV). The accelerating effect is mainly attributed to the perturbation of the electric state of the defects in the interface and grain interior.     

Surface electromagnetic waves in thin-layer biaxial structure in a magnetic field

The conditions for the existence of surface electromagnetic waves at the planar interface between a homogeneous medium (vacuum) and a thin-layer periodic structure consisting of alternating semiconductor and dielectric layers in an external magnetic field have been investigated. This structure represents an optically biaxial crystal with the effective permittivity tensor components dependent both on the geometric parameters of the structure and on the physical characteristics (magnetic field strength, frequency, and thicknesses of the layers). It has been shown that the propagation of surface electromagnetic waves localized near the interface can occur in the thin-layer biaxial structure within specific ranges of frequencies and external magnetic field strengths.     

Layering and Wetting Transitions for an SOS Interface

We study the solid-on-solid interface model above a horizontal wall in three dimensional space, with an attractive interaction when the interface is in contact with the wall, at low temperatures. There is no bulk external field. The system presents a sequence of layering transitions, whose levels increase with the temperature, before reaching the wetting transition.