Fabrication and properties of xBiFeO3-(1 − x)Bi4Ti3O12 system by sol–gel process

The thin films of mixture of xBiFeO₃-(1 − x)Bi₄Ti₃O₁₂ (x = 0.4, 0.5, and 0.6) system were prepared by a sol–gel process. The thicknesses of the thin films were 540, 500, and 570 nm, respectively. The crystal structure of all thin films annealed at 650 °C was analyzed by X-ray diffraction. It was found that the thin films at x = 0.4 and 0.5 mainly consisted of a Bi₄Ti₃O₁₂ phase while Bi₅Ti₃FeO₁₅ was the major phase of the thin film at x = 0.6. The thin film (x = 0.6) showed better ferroelectric properties in remnant polarization and polarization fatigue than those observed in the thin films (x = 0.4 and 0.5). The values of remnant polarization 2P _r and coercive field 2E c of the thin film at x = 0.6 were 36 μC/cm² and 192 kV/cm at an applied electric field of 260 kV/cm, respectively. There was almost no polarization fatigue up to 10¹⁰ switching cycles. Also weak ferromagnetism was observed in the thin film at x = 0.6.     

Epitaxial Growth of Sr x Ba1 − x Nb2O6 Thin Films Prepared from Sol-Gel Process

In this study, we prepared Sr _x Ba_{1 – x} Nb₂O₆ (x = 0.3, 0.5 and 0.7) thin film on 0.75 wt% La doped SrTiO₃ (100) and (110) single crystal substrates. A homogeneous coating solution was prepared with Sr and Ba acetates and Nb(OEt)₅ as raw materials, and acetic acid and diethlene glycol monomethyl ether as solvents. The substrates were coated with the solution by spin coating method. As-coated thin films were heated from 973 to 1273 K in air. The grains of the thin film on La doped SrTiO₃ (100) were pillar shaped and arranged in right angle to each other. On the other hand, the grains of these thin films on La doped SrTiO₃ were pillar shape and arranged in one direction. The crystallographic relationship of the thin film between Sr _x Ba_{1 – x} Nb₂O₆ and substrate that the 130 and 310 direction of the thin film on the substrate were oriented with c-axis in parallel to the substrate surface. On the other hand, (hk0) phase diffractions of Sr _x Ba_{1 – x} Nb₂O₆ thin film on the substrate (110) were investigated in the XRD theta-2theta measurement. It is expected that the Sr _x Ba_{1 – x} Nb₂O₆ (x = 0.3, 0.5 and 0.7) were highly oriented or epitaxial growing on La doped SrTiO₃ (110) single crystal substrate.     

Structure and properties of (1−x)(0.6Pb(Zn1/3Nb2/3)O3-0.4Pb (Mg1/3Nb2/3)O3)-xPbTiO3 thin films with perovskite phase promoted by polyethylene glycol

The preferential formation of a pyrochlore structure is a knotty problem in the preparation of Pb(Zn_1/3Nb_2/3)O₃ (PZN)-based thin film materials and its presence is significantly detrimental to the dielectric and piezoelectric properties. In this study, 40 mol% of PZN was replaced with Pb(Mg_1/3Nb_2/3)O₃ (PMN) for obtaining a perovskite composition around a morphotropic phase boundary (MPB), (1−x)(0.6PZN-0.4PMN)-xPT ((1−x)PZMN-xPT, PT: PbTiO₃) where x = 0.23. The thin films with this composition were prepared with a polyethylene glycol (PEG) modi-fied sol-gel method on LaAlO₃ substrates. The microstructural evolution of the films on heat treatment was examined with X-ray diffraction. With the aid of PEG, the formation of the pyrochlore phase was suppressed and the perovskite phase formed directly from the amorphous gel film. The multilayer films with a thickness around 0.25 μm showed a single perovskite phase without any detectable pyrochlore structure. Microscopic images showed uniform grain size of a few tens of nanometers. The role of the polymer dramatically promoting the perovskite phase was investigated with the aid of X-ray photoelectron spectroscopy and thermal analysis. The dielectric constant of the obtained film was 4160 at 1 kHz. The film demonstrated typical ferroelectric hysteresis loops and exhibited excellent piezoelectric performance.     

Preparation of nitrogen doped zinc oxide nanoparticles and thin films by colloidal route and low temperature nitridation process

Nitrogen doped zinc oxide (ZnO) nanoparticles have been synthesized using a colloidal route and low temperature nitridation process. Based on these results, 200 nm thick transparent ZnO thin films have been prepared by dip-coating on SiO₂ substrate from a ZnO colloidal solution. Zinc peroxide (ZnO₂) thin film was then obtained after the chemical conversion of a ZnO colloidal thin film by H₂O₂ solution. Finally, a nitrogen doped ZnO nanocrystalline thin film (ZnO:N) was obtained by ammonolysis at 250 °C. All the films have been characterized by scanning electron microscopy, X-ray diffraction, X-Ray photoelectron spectroscopy and UV–Visible transmittance spectroscopy.     

Influence of highly efficient PbS counter electrode on photovoltaic performance of CdSe quantum dots-sensitized solar cells

PbS electrode with high catalytic activity to S_n ^2? reduction certificated by the measurements of electrochemical impedance spectroscopy and cyclic voltammetry was prepared by a simple method. The high catalytic activity makes it be a low-cost alternative counter electrode to platinum (Pt) to be used in quantum dots-sensitized solar cells (QDSSCs) based on polysulfide electrolyte. The photovoltaic performance enhancement of the quantum dots (QDs)-sensitized semiconductor thin films due to the PbS counter electrode was evaluated by fabricating QDSSCs based on CdSe QDs-sensitized ZnO (SnO₂) thin film. CdSe QDs-sensitized ZnO thin film has the lower internal total series resistance and electron transmission time, the higher electron lifetime and electron collection efficiency than the CdSe QDs-sensitized SnO₂ thin film. Replacing the Pt counter electrode with the PbS counter electrode leads to more improvement on the short circuit photocurrent density for QDSSC based on the ZnO thin film than the SnO₂ thin film. Therefore, the process to limit the photovoltaic performance of CdSe QDs-sensitized solar cell and the possible way to improve the photovoltaic performance were analyzed.     

Influence of YSZ buffer layer on the electric properties of compositionally graded (Ba,Sr)TiO<Subscript>3</Subscript> thin film

Compositionally graded Ba_1−x Sr _x TiO₃ (BST) (0 ≤ x ≤ 0.4) thin films were fabricated on Pt/Ti/SiO₂/Si and YSZ/Pt/Ti/SiO₂/Si substrates by a modified sol–gel technique. The YSZ buffer layer was prepared by RF magnetron sputtering. The microstructure of the graded BST films was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The results showed that all the films have uniform and crack-free surface with a perovskite structure. The graded BST film with an YSZ buffer layer has larger dielectric constant and lower dielectric loss. The leakage current density of the graded BST film with an YSZ buffer layer lowers two orders than the film without buffer layer. The improved electric properties of the graded films with an YSZ buffer layer was attributed to the YSZ buffer layer act as an excellent seeding layer to enhance the graded BST film growth.     

Preparation,dielectric and ferroelectric properties of (Na<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>)<Subscript>0.94</Subscript>Ba<Subscript>0.06</Subscript>TiO<Subscript>3</Subscript> thin films by a sol–gel process

(BiFeO₃)_1−x –(BaTiO₃) _x solid solution thin films are grown on Pt/Ti/SiO₂/Si substrates by chemical solution deposition method. Films with x = 0.00, 0.05 and 0.10 were prepared by annealing at 500°C. X-ray diffraction patterns indicate that the pure BiFeO₃ film adopts random orientation while the solid solution films are highly (100) preferentially oriented. Improved electric property at room temperature was observed in the BaTiO₃ incorporated BiFeO₃ films. The remanent polarization of the film with x = 0.0, 0.05 and 0.10 are 76.6, 51.9 and 19.7 μC/cm² respectively under a measuring electric field of 0.94 MV/cm. The BaTiO₃ incorporated BiFeO₃ films show improved fatigue endurance. By the solid solution with BaTiO₃, the leakage current density is reduced effectively.     

Chemical solution processing and characterization of Ba(Zr,Ti)O<Subscript>3</Subscript>/LaNiO<Subscript>3</Subscript> layered thin films

Ba(Zr,Ti)O₃/LaNiO₃ layered thin films have been synthesized by chemical solution deposition (CSD) using metal-organic precursor solutions. Ba(Zr,Ti)O₃ thin films with smooth surface morphology and excellent dielectric properties were prepared on Pt/TiO _x /SiO₂/Si substrates by controlling the Zr/Ti ratios in Ba(Zr,Ti)O₃. Chemically derived LaNiO₃ thin films crystallized into the perovskite single phase and their conductivity was sufficiently high as a thin-film electrode. Ba(Zr,Ti)O₃/LaNiO₃ layered thin films of single phase perovskite were fabricated on SiO₂/Si and fused silica substrates. The dielectric constant of a Ba(Zr_0.2Ti_0.8)O₃ thin film prepared at 700°C on a LaNiO₃/fused silica substrate was found to be approximately 830 with a dielectric loss of 5% at 1 kHz and room temperature. Although the Ba(Zr_0.2Ti_0.8)O₃ thin film on the LaNiO₃/fused silica substrate showed a smaller dielectric constant than the Ba(Zr_0.2Ti_0.8)O₃ thin film on Pt/TiO _x /SiO₂/Si, small temperature dependence of dielectric constant was achieved over a wide temperature range. Furthermore, the fabrication of the Ba(Zr,Ti)O₃/LaNiO₃ films in alternate thin layers similar to a multilayer capacitor structure was performed by the same solution deposition process.     

Stable PZT sol for preparing reproducible high-permittivity perovskite-based thin films

Results are reported on the development of high-K dielectric material using sol-gel chemistry. High permittivity thin film capacitor have been developed based on lead-zirconate-titanate (PbZr _x Ti_1−x O₃, PZT) ferroelectric ceramic layers deposited on to 6″ platinized silicon wafer using the spin-coating technique. Selecting a diol-based solvent as diluting medium, a PZT solution with remarkable shelf life up to 1 year has been prepared. To synthesize such a reproducible and time-stable solution, a ripening step before dilution has been introduced. The deposition process has been also optimized to reduce the required number of coatings and to avoid intermediate high-temperature annealing. By carefully controlling environmental parameters, the as-developed PZT solution leads to reproducible high-performance thin film capacitor, enabling an industrial use. Thus, 200-nm thick PZT layers with permittivity as high as 900, capacitance as high as 40 nF/mm2 and breakdown voltage up to 30 V have been obtained.     

Effect of annealing atmosphere on structural,optical and electrical properties of Al-doped Zn<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Cd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>O thin films

1 at.% Al-doped Zn_1−x Cd _x O (x = 0–8 at.%) thin films were prepared on glass substrates by sol–gel method. The codoping films retained the hexagonal wurtzite structure of ZnO, and showed preferential c-axis orientation. The effect of annealing ambient (in vacuum and nitrogen) on the optical and electrical properties of (Cd,Al)-codoped ZnO films were investigated using transmission spectra and electrical measurements. The transmittances of the codoping films were obviously degraded by vacuum annealing to 50–60 %, but enhanced to 70–80 % after nitrogen annealing. The carrier concentration and Hall mobility both increased, and resistivity decreased with narrowing band gap of Al-doped Zn_1−x Cd _x O, below different critical concentrations x = 4 % (in vacuum) and x = 6 % (in nitrogen). It is revealed that the conductivity is also improved by Cd doping along with band gap modification. The variations in optical and electrical properties are ascribed to both the changes of the crystallinity and concentration of oxygen vacancies under different ambient. In view of transmittance and conductivity, nitrogen annealing might be a more effective post-annealing way than vacuum annealing for our (Cd,Al)-codoped ZnO films to meet the requirements of transparent conducting oxide (TCO).     

Effect of Niobium Modifications to PZT (53/47) Thin Films Made by a Sol-Gel Route

Niobium-modified lead zirconate titanate thin films (PNZT) with nominal compositions, Pb_(1–0.5x) (Zr_0.53 Ti_0.47)_1–x Nb _x O₃:x = 0.02–0.07, have been prepared using a diol based sol-gel route. Single-layer (0.5 m) films were fabricated on platinised silicon substrates by spin-coating. The effect of niobium additions with regard to phase development, microstructure, and ferroelectric and dielectric properties were investigated for different annealing temperatures. For comparison, unmodified PZT films were also prepared. Niobium substitution increased the crystallisation temperatures for perovskite PNZT phase formation. The values of remanent polarisation P _r and dielectric constant _r were found to decrease with the introduction of Nb. For example, in films heated at 700°C for 15 min, the P _r value of an unmodified PZT film was 31 C cm^–2, compared to 17 C cm^–2 for an x = 0.05 PNZT film, whilst respective relative permittivity values fell from 1190 to 600. The highest Nb concentration film, x = 0.07, did not display any switchable polarisation characteristics, which is consistent with high levels of intermediate pyrochlore phase.     

Direct growth of comet-like superstructures of Au-ZnO submicron rod arrays by solvothermal soft chemistry process

The synthesis, characterization and proposed growth process of a new kind of comet-like Au-ZnO superstructures are described here. This Au-ZnO superstructure was directly created by a simple and mild solvothermal reaction, dissolving the reactants of zinc acetate dihydrate and hydrogen tetrachloroaurate tetrahydrate (HAuCl₄·4H₂O) in ethylenediamine and taking advantage of the lattice matching growth between definitized ZnO plane and Au plane and the natural growth habit of the ZnO rods along [001] direction in solutions. For a typical comet-like Au-ZnO superstructure, its comet head consists of one hemispherical end of a central thick ZnO rod and an outer Au-ZnO thin layer, and its comet tail consists of radially standing ZnO submicron rod arrays growing on the Au-ZnO thin layer. These ZnO rods have diameters in range of 0.2-0.5 μm, an average aspect ratio of about 10, and lengths of up to about 4 μm. The morphology, size and structure of the ZnO superstructures are dependent on the concentration of reactants and the reaction time. The HAuCl₄·4H₂O plays a key role for the solvothermal growth of the comet-like superstructure, and only are ZnO fibers obtained in absence of the HAuCl₄·4H₂O. The UV-vis absorption spectrum shows two absorptions at 365-390 nm and 480-600 nm, respectively attributing to the characteristic of the ZnO wide-band semiconductor material and the surface plasmon resonance of the Au particles.     

Well Oriented ZnO Nanorods Array: Negative Resistance and Optical Switching

Well‐oriented ZnO nanorods (NRs) arrays were grown on Si, alumina, quartz, and FTO substrates through a ZnO seed layer followed by low temperature wet chemical process. The influence of sputtered ZnO seed layer thickness (100, 50, 32, and 16 nm), annealing temperature and CuO_x coverage on the characteristics of ZnO NRs were investigated in this study. The crystalline structural, chemical, morphological, optical, and electrical properties of ZnO NRs arrays were studied by X‐ray diffraction (XRD), field emission‐ scanning electron microscopy equipped by energy dispersive X‐ray spectroscopy (FE‐SEM/EDX), Raman scattering, UV/Vis ‐ near IR absorption spectroscopy and current‐voltage characteristic. XRD and Raman spectra measurement revealed that the synthesize ZnO displayed hexagonal wurtzite structure. The individual rod diameter, density, and orientation can be controlled by varying the seed layer thickness. The mean diameter and maximum length of ZnO NRs are around 55–66 nm and 282 nm, respectively. ZnO NRs/ ZnO thin film structure shows optical switching and negative differential resistance behavior as applicable to ON/OFF gate and memory devices.     

White light emission from nano-fibrous ZnO thin films/porous silicon nanocomposite

Nanocomposites composed of nano-fibrous ZnO thin films and porous silicon (PS) were prepared and examined by atomic force microscopy (AFM), X-ray diffraction (XRD), Raman spectroscopy, and photoluminescence (PL) to investigate their structural and optical properties. PS, consisting of irregular and random nanosized-pores, was prepared by electrochemical anodization. The nano-fibrous ZnO thin films were grown on PS by the sol-gel spin-coating method. The texture coefficient (TC _(hkl)) of the nano-fibrous ZnO thin films was calculated to determine the preferred orientation. The nano-fibrous ZnO thin films were grown with a c-axis preferred orientation. The residual stress in the films was reduced in the case of PS. The observed broad PL emission peak from 460 to 598 nm was attributed to coupled emission from ZnO to PS. The results show that white light luminescence with blue, green, and red emission peaks having highly uniform intensities can be obtained from the nanocomposite via a relatively simple and low-cost sol-gel spin-coating method.     

Photocatalytic Activity and Characterization of the Sol-Gel Derived Pb-Doped TiO2 Thin Films

Photocatalytically active Pb-doped TiO₂ thin films were prepared on a soda-lime glass substrate by sol-gel dip-coating technique using TiO₂ sols containing lead(II) nitrate. The thin films were characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), UV-VIS spectroscopy and X-ray diffraction (XRD). A shift of the UV-VIS absorption towards longer wavelengths was observed, which indicated a decrease in the band-gap of TiO₂ upon Pb doping. XRD results showed both pure and Pb-doped TiO₂ thin films were polycrystalline, anatase type, and oriented predominantly to the (101) plane. A slight shift in the d-spacing for the Pb-doped film indicated the incorporation of Pb into the TiO₂ lattice to form Pb _x Ti_1–x O₂ solid solution. AFM results showed Pb-doped TiO₂ thin films were composed of larger TiO₂ particles and had rougher surface, compared with un-doped TiO₂ thin films. XPS results showed that except for the enrichment of Pb near the surface, Pb exists in the forms of Pb _x Ti_1–x O₂ and PbO. Dimethyl-2,2-dichlorovinyl phosphate (DDVP) was efficiently degraded in the presence of the Pb-doped TiO₂ thin films by exposing the insecticide solution to sunlight. The mechanism of photocatalytic activity enhancement of the Pb-doped TiO₂ thin films was discussed.     

Effect of biphase on dielectric properties of Bi-doped lead strontium titanate thin films

Pb_0.4Sr_0.6TiO₃ (PST) thin films doped with various concentration of Bi were prepared by a sol-gel method. The phase status, surface morphology and dielectric properties of these thin films were measured by X-ray diffraction (XRD), scanning electron microscopy (SEM) and impedance analyzer, respectively. Results showed that the thin films with the maximum dielectric constant and minimum dielectric loss were obtained for x=0.15. For x<0.15, only pure PST perovskite phase were in the thin films. For 0.2<x<0.4, the PST/Bi₂Ti₂O₇ biphase were obtained. The thin films with pure Bi₂Ti₂O₇ pyrochlore phase were obtained for x=0.67. The biphase thin films had high tunability and high figure of merit (FOM). The FOM of PST/Bi₂Ti₂O₇ biphase thin film was about 6 times higher than that thin films formed with pure perovskite phase or pure pyrochlore phase.     

Preparation of nanocrystalline TiO2 thin film at low temperature and its application in dye-sensitized solar cell

The electrophoretic deposition combined with common pressure hydrothermal treatment was employed to prepare nanocrystalline TiO₂ thin film from suspension of tetra-n-butyl titanate and P25 at low temperature. The tetra-n-butyl titanate was hydrolyzed and crystallized into anatase to interconnect nanocrystalline TiO₂ particles and to stick them to a conductive substrate by common pressure hydrothermal treatment to improve the electron transport properties of the deposited thin film. A dye-sensitized solar cell based on TiO₂ thin film prepared by the low temperature method yielded the conversion efficiency of 6.12%. Due to the relative slower electron transport rate in the deposited film, its conversion efficiency was slightly lower than that of the cell with TiO₂ thin film prepared by the conventional high temperature sintering method. Since it is free of high temperature sintering step, this method can be used to prepare nanocrystalline TiO₂ thin film on plastic polymer conductive substrate for fabrication of flexible dye-sensitized solar cell.     

Notable enlargement of remnant polarization for fatigue-free SrBi4Ti4O15 thin films by La-substitution

La-doped SrBi₄Ti₄O₁₅, SrBi_4–x La _x Ti₄O₁₅ (SBLT-x, x = 0.00, 0.10 and 0.25), thin films have been successfully prepared by the sol–gel method. Structures, surface morphology and ferroelectric properties were investigated. Compared with undoped SBTi, SBLT-0.10 shows a notable larger remnant polarization (2P _r = 46 μC/cm²). Meanwhile, the SBLT-0.10 film shows little change of P _nv and −P _nv up to 4.4 × 10¹⁰ switching cycles, suggesting an excellent fatigue-endurance characteristics.     

Influence of Mn incorporation on the structural and optical properties of sol gel derived ZnO film

Undoped and manganese doped ZnO (ZnO:Mn) films were prepared by sol gel method using spin coating technique. The effect of Mn incorporation on the structural and optical properties of the ZnO film has been investigated. The crystalline structure and orientation of the films have been investigated by using their X-ray diffraction spectra. The films exhibit a polycrystalline structure. Mn incorporation led to substantial changes in the structural characteristics of the ZnO film. The scanning electron microscopy (SEM) images of the films showed that the surface morphology of the ZnO film was affected by the Mn incorporation. The transparency of the ZnO film decreased with the Mn incorporation. The optical band gap and Urbach energy values of the ZnO and ZnO:Mn films were found to be 3.22, 3.19 eV and 0.10, 0.23 eV, respectively. The optical constants of these films, such as refractive index, extinction coefficient and optical dielectric constants were determined using transmittance and reflectance spectra. The refractive index dispersion curve of the films obeys the single oscillator model with dispersion parameters. The oscillator energy, E _o , and dispersion energy, E _d, of the films were determined 5.30 and 16.26 eV for ZnO film and 5.80 and 12.14 eV for ZnO:Mn film, respectively.     

Effect of annealing temperature on the structural and optical properties of Zn1−xMgxO particles prepared by oxalate precursor

Zn_1−xMg_xO particles were prepared using zinc and magnesium oxalate precursor by co-precipitated method. The lattice constants of Zn_1−xMg_xO proved that the interstitial Mg formed at 500 °C and Mg replaced Zn in ZnO tetrahedral coordination at 800 °C. Compared with the ZnO, the absorbing band edge of the Zn_1−xMg_xO displayed blue shifts. The room temperature photoluminescence was similar to ZnO and variation of Mg content did not change the shape or peak position of the emission spectra markedly when it was annealed at 500 °C. However, its blue emission band disappeared, and a relatively strong green light emission at 498 nm appeared after annealed at 800 °C. The photoluminescence intensity ratios I_(green)/I_(UV) of Zn_1−xMg_xO varied with Mg content and the green light emission peak shifted from 498 nm to 472 nm when Mg content increased from 0 to 2.0 at.%.