Thermoluminescence and optical studies on X-irradiated terbium-doped potassium bromide crystals

This paper reports the thermoluminescence (TL) and other optical studies made on terbium-doped KBr crystals X-irradiated at room temperature. Photoluminescence studies confirm the presence of terbium ions in the KBr matrix in their trivalent form. Formation of Z₁ centres on F-bleaching of X-irradiated crystals is observed. The characteristic emission due to Tb³⁺ ions in the spectral distribution under optically stimulated emission and thermoluminescence emission confirm the participation of the Tb ions in the recombination process. TL process has been identified to be due to the thermal mobilization of electrons produced during the colouration process.     

Excitation mechanism of Bi3+ luminescence centres in CaS

A systematic approach to investigate the excitation mechanism of Bi³⁺ luminescence centres in CaS has been made from simultaneous measurements of photoluminescence (PL) and photoconductivity (PC), thermoluminescence (TL) and thermally stimulated conductivity (TSC). Changes in PL and PC have been studied in the temperature range 295–505 K. An attempt has been made to explain the correlation between these phenomena with a simple trapped-carrier-free-carrier recombination model. It is found that the charge transfer process dominates in all these phenomena. Conductivity is primarily due to electron traffic through the conduction band, whereas their subsequent recombination through the excited state (³P₁) accounts for the characteristic emission of Bi³⁺.     

Luminescence,optical and laser Raman scattering studies on γ -irradiated terbium-doped potassium iodide crystals

This paper reports the thermoluminescence (TL), optical absorption and other laser Raman scattering studies performed on terbium-doped KI crystals γ-irradiated at room temperature. Photoluminescence studies confirm the presence of terbium ions in the KI matrix in their trivalent form. Formation of V₃- and Z₁-centres on F-bleaching of γ-irradiated crystals was observed. The characteristic emission due to Tb³⁺ ions in the spectral distribution under optically stimulated emission and TL emission confirms the participation of the Tb³⁺ ions in the recombination process. The Raman bands were identified as the totally symmetric vibration modes of f.c.c. species KI:Tb³⁺.     

Investigation of defect centres responsible for TL/OSL in MgAl2O4:Tb

Magnesium aluminate doped with Tb³⁺ (MgAl₂O₄:Tb³⁺) was prepared by combustion synthesis. Three thermoluminsence (TL) peaks at 120, 220 and 340 °C were observed. PL and TL emission spectrum shows that Tb³⁺ acts as the luminescent centre. Optically stimulated luminescence (OSL) was observed when stimulated by 470 nm blue light.Electron spin resonance (ESR) studies were carried out to identify the defect centres responsible for the TL and OSL processes in MgAl₂O₄:Tb³⁺. Two defect centres were identified in irradiated MgAl₂O₄:Tb³⁺ phosphor by ESR measurements which was carried out at room temperature and these were assigned to V and F⁺ centres. V centre (hole centre) is correlated to 120 and 220 °C TL peaks and F⁺ centre (electron centre), which acts as a recombination centre is correlated to 120, 220 and 340 °C.     

Thermoluminescence and opitical absorption of BaF2 crystals

Abstract

Nominally pure and Dy-doped BaF₂ crystals were investigated concerning their optical absorption (OA) and thermoluminescence (TL) properties. Peaks at 120—150 and 200°C were observed for a heating rate of 1.7°C/s. The TL response for γ-rays and the TL emission spectra were obtained for these peaks. Except for the purest crystal, all BaF₂ crystals produced OA bands before irradiation typical of Ce³⁺ ions. After irradiation, Dy doped crystals showed bands due to Dy²⁺ ions. A nominally pure sample gave bands related to Ce²⁺ ions and photochromic centers of Ce³⁺ ions. and photochromic centres of Ce³⁺ ions. The correlation between some OA bands and TL peaks is discussed.     

Luminescence studies on gamma irradiated KCl: Ce crystals

This paper reports thermoluminescence(TL), optical absorption and TL emission studies that are made on Ce³⁺ doped KCl single crystals irradiated at room temperature. The glow curve and optical absorption studies indicate the participation of Ce³⁺ ions in the TL process. The TL study suggests the presence of low concentration of Ce³⁺ ions which reduces the TL efficiency with respect to pure KCl samples. On F bleaching γ irradiated crystals Z₁ centers are observed. A broader and strongly intense violet blue emission at 290, 370, 423 and 488 nm has been observed with 240 nm excitation. This emission has been attributed due to the transition from 5d(2D) excited energy level to the 4f¹ ground stable energy level (2F_5/2 and 3F_7/2) of Ce³⁺ doped KCl crystals.     

OSL and TL in TLD-100 following alpha and beta irradiation: Application to mixed-field radiation dosimetry

The optically stimulated luminescence (OSL) of LiF:Mg,Ti (TLD-100) following irradiation by beta and alpha particles was investigated by measurement of the excitation and emission spectra of OSL and comparison with thermoluminescence (TL) characteristics. The OSL excitation spectra of all the samples following both beta and alpha irradiation are very similar.Identical emission bands with very similar relative intensities following both beta irradiation and alpha particle irradiation have been recorded in the OSL induced in nominally pure LiF mono and TLD-100 polycrystals. The identical excitation and emission bands in the doped and pure crystals are strong evidence indicating that the observed OSL is due to an intrinsic trapping structure. The OSL has indeed been previously attributed to F₂ centers and F₃⁺ centers.The preferential excitation of OSL compared to TL following high ionisation density (HID) alpha irradiation is naturally explained via the identification of OSL with the “two-hit” F₂ or F₃⁺ center, whereas the major component of composite TL glow peak 5 is believed to arise from a “one-hit” complex defect. This discovery allows near-total discrimination between HID radiation and low ionisation density (LID) radiation and may have significant potential in mixed-field radiation dosimetry.     

Optical properties of LiNbO3:Cr crystals co-doped with germanium oxide

Lithium niobate (LiNbO₃) crystals doped with chromium ions show a clear green colouring reflecting the absorption profile of the dominating [Cr]_Li defect centres. A significant change in its colouration takes place when it is co-doped with other valency impurities such as Mg²⁺, Sc³⁺ and W⁶⁺, above a certain threshold concentration. This concentration singularity has been attributed to the formation of [Cr]_Nb centres coexisting with the [Cr]_Li centres.In this work, we extended the investigation on the effect of co-dopant ions in Cr:LiNbO₃ to tetravalent cation such as GeO₂. A singularity in the relative intensity of the ⁴A₂→⁴T₁ and ⁴A₂→⁴T₂ absorption band was observed for a concentration of ～1.5 mol%, compared with 4.5 mol% for Mg²⁺. The photoluminescence emission spectra also reveal a new emission band, at a lower energy than the [Cr]_Li centre, corresponding to this threshold concentration. A charge compensation model is proposed to explain the role of cation impurities and results are compared with those of other valence impurities.     

Origin of green luminescence in PbWO4 crystals

Characteristics of two green emission bands, G(I) and G(II), and their origin were investigated within 0.4-300 K under photoexcitation in the 3.4-6.0 eV energy range for undoped and Mo⁶⁺-, Mo⁶⁺ , Y³⁺-, Mo⁶⁺, Nb⁵⁺-, Mo⁶⁺, Ce³⁺-, Cr⁶⁺-, La³⁺-, Ba²⁺- and Cd²⁺-doped PbWO₄ crystals with different concentrations of impurity and intrinsic defects, grown by different methods and annealed at different conditions. The G(I) emission band, observed at low temperatures, located around 2.3-2.4 eV and excited around 3.9 eV, is usually a superposition of many closely positioned bands. The G(I) emission of undoped crystals is assumed to arise from the WO₄²⁻ groups located in the crystal regions of lead-deficient structure. In Mo⁶⁺-doped crystals, this emission arises mainly from the MoO₄²⁻ groups themselves. The G(II) emission band located at 2.5 eV is observed only in the crystals, containing the isolated oxygen vacancies — WO₃ groups. This emission appears at T>160 K under excitation around 4.07 eV as a result of the photo-thermally stimulated disintegration of localized exciton states and subsequent recombination of the produced electron and hole centres near WO₃ groups. The G(II) emission accompanies also thermally stimulated recombination processes in PbWO₄ crystals above 150 K. Mainly the G(II) emission is responsible for the slow decay of the green luminescence in PbWO₄ crystals.     

Thermo-and photostimulated luminescence of CaI2: Tl and CaI2: Pb crystals

Thermo-and photostimulated luminescence of CaI₂: Tl and CaI₂: Pb scintillation crystals under optical and X-ray excitation is studied. It is shown on the basis of the results obtained with account for the data of studies of photo-and X-ray-luminescent properties of these scintillators that Tl⁺ and Pb²⁺ ions form complex capture centers with host defects. These centers are responsible for the thermostimulated luminescence in the temperature range of 150–295 K, and the centers of charge carrier trapping are spatially separated from the centers of recombination emission. An assumption is made that thermo-and photostimulated luminescence of CaI₂: Tl and CaI₂: Pb crystals under optical excitation is observed mainly due to the delocalization of charge carriers from hydrogen-containing centers responsible for the excitation band at 236 nm and the photoluminescence of CaI₂ with a maximum at 395 nm. The luminescence of CaI₂: Tl crystals in the 510-nm band and CaI₂: Pb crystals in the 530-nm band is determined by the radiative decay of near-activator excitons.     

Enhanced luminescent properties and optical absorption of γ-irradiated KI: Ce, Tb crystals

This paper reports that KI doped with Ce³⁺ or double doped with Tb³⁺ and Ce³⁺ were prepared by the Bridgman-Stockbarger method and characterized by optical absorption photoluminescence (PL), thermoluminescence (TL), photostimulated emission (PSL) and TL emission. The optical absorption measurement indicates that F and V₁, V₂ centers are formed in the crystals during the γ irradiation process. It was attempted to incorporate a broad band of Ce³⁺ activator into the narrow band emission of Tb³⁺ in the KI host without the reduction of emission intensity. Ce³⁺-co-doped KI and Tb crystals showed a broad band emission due to the d-f transition of Ce³⁺ and a reduction in the intensity of emission peaks due to the ⁵D₃-⁷F_j (j=3,4,5,6) transition of Tb³⁺, when they were excited at 240 nm.These results supported that an effective energy transfer occurs from Tb³⁺ to Ce³⁺ in the KI host. Co-doping Ce³⁺ ions greatly intensified the excitation peak at 260 nm for the emission at 393 nm of Tb³⁺, which means that more lattice defects, involved in the energy absorption and transfer to Tb³⁺, are formed by the Ce³⁺ co-doping. The integrated light intensity is an order of magnitude higher as compared to the undoped samples for similar doses of irradiation and heating rates. The defects generated by irradiation were monitored by optical absorption and TSL Trap parameters for the TL process are calculated and presented.     

ESR of Fe3+ -Rhombic,Fe2+ -Vo and Fe1+ -Vo complexes in SrTiO3

Three new Fe-defect complexes have been identified by ESR in Fe doped crystals of SrTiO₃. These are an Fe³⁺ center with rhombic fine structure in the “as-grown” crystals, and the vacancy associated complexes Fe²⁺ -V_o and Fe¹⁺ -V_o in “reduced” crystals. Photo-excited charge transfer effects are observed for these centers.     

Defect characterization of Ga<Subscript>4</Subscript>Se<Subscript>3</Subscript>S layered single crystals by thermoluminescence

Trapping centres in undoped Ga ₄Se ₃S single crystals grown by Bridgman method were characterized for the first time by thermoluminescence (TL) measurements carried out in the low-temperature range of 15 ?300 K. After illuminating the sample with blue light (～470 nm) at 15 K, TL glow curve exhibited one peak around 74 K when measured with a heating rate of 0.4 K /s. The results of the various analysis methods were in good agreement about the presence of one trapping centre with an activation energy of 27 meV. Analysis of curve fitting method indicated that mixed order of kinetics dominates the trapping process. Heating rate dependence and distribution of the traps associated with the observed TL peak were also studied. The shift of peak maximum temperature from 74 to 113 K with increasing rate from 0.4 to 1.2 K /s was revealed. Distribution of traps was investigated using an experimental technique based on cleaning the centres giving emission at lower temperatures. Activation energies of the levels were observed to be increasing from 27 to 40 meV by rising the stopping temperature from 15 to 36 K.     

Investigation of thermoluminescence of natural zircon relevant to dating application

The thermoluminescence (TL) characteristics of natural zircons from Vietnam were studied for potential application to TL dating. All the glow curves of samples irradiated by gamma radiation or UV light showed a complex structure that consisted of a low temperature part (LTP) and a high temperature part (HTP). The TL emission spectra and monochromatic glow curves indicate that the two main impurities governing the TL emission are Dy³⁺ (LTP) and Tb³⁺ (HTP). The anomalous fading of the TL signal was assigned to the emission associated with Dy³⁺ whereas the 545 nm emission associated with Tb3⁺, exhibits significantly lower fading and consequently more suitable for TL dating.     

On the spectra luminescence properties of charoite silicate

Charoite is a hydrous alkali calcium silicate mineral [K₄NaCa₇Ba_0.75Mn_0.2Fe_0.05(Si₆O₁₅)₂(Si₂O₇)Si₄O₉(OH)·3(H₂O)] exhibiting an intense lilac colour related to Mn²⁺ and Fe³⁺ colour centres. These ions also contribute to a strong luminescence at ∼585 and 705 nm. This work studies the thermal dependence of these luminescent centres by (i) thermoluminescence (TL) of pre-heated and pre-irradiated charoite aliquots, (ii) by time-resolved cathodoluminescence (TRS-CL) at room and cryogenic temperatures (RT and CT), (iii) by spatially resolved spectra CL under scanning electron microscopy (SRS-CL-SEM) and (iv) by ion beam spectra luminescence (IBL) with H⁺, H₂⁺ and ⁴He⁺ ions at RT and LT. The main peak, ∼585 nm, is linked to a transition ⁴T_1,2 (G)→⁶A₇(S) in Mn²⁺ ions in distorted six-fold coordination and the emission at ∼705 nm with Fe²⁺→Fe³⁺ oxidation in Si⁴⁺ lattice sites. Less intense UV-blue emissions at 340 and 390 nm show multi-order kinetic TL glow curves involving continuous processes of electron trapping and de-trapping along with an irreversible phase transition of charoite by de-hydroxylation and lattice shortening of Δa=0.219 Å, Δb=0.182 Å; Δc=0.739 Å. The Si-O stressed lattice of charoite has non-bridging oxygen or silicon vacancy-hole centres, and Si-O bonding defects which seem to be responsible for the 340 nm emission. Extrinsic defects such as the alkali (or hydrogen)—compensated [AlO₄/M⁺] centres could be linked with the 390 nm emission. Large variations in 585 and 705 nm intensities are strongly temperature dependent, modifying local Fe-O and Mn-O bond distances, short-range-order luminescence centres being very resistant under the action of the heavy ion beam of ⁴He⁺. The SRS-CL demonstrates strong spatial heterogeneity in the luminescence of the charoite.     

Role of Al or Eu on thermoluminescence of Al- and/or Eu-doped SiO2 crystals

Although SiO₂ crystals have been used in electroluminescence devices and thermoluminescence (TL) dosimeters, the emission mechanism of TL has not yet been clearly explained. Recently, as we could get amorphous and highly pure SiO₂ prepared by the sol-gel method, we have investigated the TL emission mechanism using Al³⁺- and/or Eu³⁺-doped SiO₂ crystalline samples prepared by the heat-treatment under much lower temperature that the melting point of SiO₂. The TL spectrum of the Eu³⁺-doped sample displayed several peaks, including two main peaks due to the electron transitions from ⁵D₂ to ⁷F₅ (ca. 570 nm) and from ⁵D₀ to ⁷F₂ (ca. 610 nm). As doping concentration increased, all the peak intensities reduced from maximum values except that due to the electron transition from ⁵D₀ to ⁷F₂. These observations are thought to result from a cross-relaxation process due to the lack of inversion symmetry at the Eu³⁺ site.     

On the mechanisms of thermoluminescence and deformation luminescence in gamma-irradiated KCl

Thermoluminescence (TL) and deformation luminescence (DL) studies in KC1 γ-irradiated at room temperature are reported. The roles that F-centres and their higher conglomerates on the one hand, and V₂- and V₃-centres as recombination centres on the other hand, play in these processes are specified. Two peaks at 2.5 eV and 3 eV are observed in the emission spectra of both TL and DL. The close relationship between TL and DL is confirmed.     

On the binding energies and configurations of vacancy and copper–vacancy clusters in bcc Fe–Cu:a computational study

The properties of trapping centres in – as grown – Tl₄GaIn₃S₈ layered single crystals were investigated in the temperature range of 10–300 K using thermoluminescence (TL) measurements. TL curve was analysed to characterize the defects responsible for the observed peaks. Thermal activation energies of the trapping centres were determined using various methods: curve fitting, initial rise and peak shape methods. The results indicated that the peak observed in the low-temperature region composed of many overlapped peaks corresponding to distributed trapping centres in the crystal structure. The apparent thermal energies of the distributed traps were observed to be shifted from ~12 to ~125 meV by increasing the illumination temperature from 10 to 36 K. The analysis revealed that the first-order kinetics (slow retrapping) obeys for deeper level located at 292 meV.     

Testing a model-guided approach to the development of new thermoluminescent materials using YAG:Ln produced by solution combustion synthesis

The objective of this work is to test a model-guided approach, coupled with an efficient material synthesis method, for the development of new thermoluminescent (TL) material using yttrium aluminum garnet (YAG, Y₃Al₅O₁₂) as a model material. We systematically investigated undoped and lanthanide-doped YAG using x-ray diffraction (XRD), TL, and radioluminescence (RL) to understand the role of the lanthanides in the TL process, i.e., whether they act as trapping centers or recombination centers. We also prepared samples with multiple dopants to test the possibility of creating materials with multiple TL peaks. The initial rise method of TL analysis was used to estimate the activation energies associated with the TL peaks.The role of the lanthanide impurities predicted using the lanthanide energy level diagram was largely confirmed, as evidenced by the TL curves, TL emission spectra and activation energy analysis. However, our data suggests that the exact role of the lanthanide dopants during the TL process depends on the thermal stability of the trapped charges, i.e. the same lanthanide can act as a trapping center in one system and as a recombination center in another system. These results demonstrate the possibility of introducing appropriate TL peaks and recombination centers in YAG produced by SCS by lanthanide doping, where the role of the lanthanide dopant is consistent with a model for the lanthanide energy levels. This allows for a more guided approach to the development of new TL materials with peaks in certain temperature range or multiple TL peaks, at least in conditions in which the model applies.     

Photoluminescence and EPR studies on gamma irradiated Ce doped potassium halide single crystals

Electron Paramagnetic Resonance(EPR), Photoluminescence(PL), Thermoluminescence (TL) and other optical studies of γ-irradiated KBr, KCl:Ce³⁺ single crystals. Cerium when doped into the KBr, KCl is found to enter the host lattice in its trivalent state and act as electron trap during γ-irradiation, thereby partially converting itself to Ce²⁺. The Photoluminescence(PL) spectra of both KCl and KBr crystals doped with Ce exhibit the strong blue emissions of Ce corresponding to ⁵d(²D)→²F_5/2 and ⁵d(²D)→²F_7/2 transitions. The defect centers formed in the Ce³⁺ doped KBr and KCl. Crystals are studied using the technique of EPR. A dominant TL glow peak at 374, 422 K and KCl:Ce³⁺ at 466, 475 K is observed in the crystal. EPR studies indicate the presence at two centers at room temperature. Spectral distribution under the thermoluminescence emission(TLE) and optically stimulated emission(OSL) support the idea that defect annihilation process to be due to thermal release of F electron in KBr, KCl:Ce³⁺ crystals. Both Ce³⁺ and Ce²⁺ emissions were observed in the thermoluminescence emission of the crystals.