渐变折射率光量子阱对束缚态能级的调整

在对称的均匀电介质材料光子晶体体系中插入另一折射率渐变的光子晶体可构成光量子阱结构.利用时域有限差分法计算了不同折射率分布光量子阱结构的传输谱.研究表明：束缚态是对处于垒光子晶体禁带中的阱光子晶体导通带的离散化,束缚态能级个数等于阱光子晶体结构单元的重复周期数；以渐变方式调整阱区折射率分布,可在特定频率范围内得到新的互不交叠的束缚态.这样在有限的禁带区域可以成倍增加光子束缚态而无需增大光量子阱结构的尺寸,使信道密度最大化、光波有效带宽的使用最优化.这种量子阱结构可用于制作超窄带滤波器和多通道窄带滤波器,有望在光通信超密集波分复用和光学精密测量技术中获得广泛应用. 关键词： 光量子阱 光子束缚态 渐变折射率 光子晶体     

一维矩形受限光量子阱光传输特性的研究

结合分离变量法和薄膜光学理论推导了一维矩形受限光量子阱的传输矩阵,并分析了一维矩形受限光量子阱结构的传输特性.计算结果表明:相对于非受限光量子阱结构来说,受限光量子阱的带隙和束缚态向高频方向移动,且束缚态的数目也与阱光子晶体的周期数相同.束缚态的频率随模式量子数的增加而线性增加,随矩形边长参量的增加而呈Lorentz函...     

含特异材料的光量子阱频率特性研究

基于传输线加载集总元件的方法制备光量子阱. 对阱内物质为光子晶体和左手材料两种情况下的传输特性进行比对. 结果表明局域模个数与阱内物质的周期数相同; 左手材料情况下光量子阱具有尺度小、 便于调节的优点.实验结果与理论结果相符合.     

一维对称光量子阱结构多通道滤波特性研究

利用传输矩阵法研究了一维对称光量子阱结构的多通道滤波特性,发现该结构的多透射峰具有分布对称、近似等间距和高透射率等特点,且峰值位置能利用等效理论近似解析求出.透射峰的数目可通过阱区结构参量确定和进行调整,结构的光子禁带范围可通过材料参量的选择获得极大的展宽.该结构只采用两种材料,结构简单,易于制作,具有较大的材料选择性.     

介质厚度对光量子阱束缚态波长的调整

用传输矩阵法计算了不同介质厚度对光量子阱结构的传输特性。计算结果表明:光子的束缚效应将导致波长的量子化。通过微小地改变阱区和垒区介质的厚度可改变束缚态的波长,且阱区和垒区介质厚度的变化与束缚态波长的变化呈良好的线性关系,阱区介质厚度的变化对束缚态波长的变化大于垒区。阱区介质厚度与束缚态半峰宽呈阶梯形状降低,而阱区介质厚度与束缚态品质因子呈阶梯形状升高。此结果为设计所需要的束缚态波长光量子阱结构提供了理论依据,也为光量子阱实现热敏开关提供了理论基础。     

基于渐变折射率光量子阱的密集波分复用研究

提出了利用渐变折射率光量子阱设计密集波分复用器件的构想,用时域有限差分法验证了该构想的可行性,分析了这种器件工作的物理机理.计算表明,折射率分布曲线不同的光子阱能局域不同的量子态,应用不同局域态的光量子阱对光波进行合成和分离,能够有效减小信道间隔,实现密集波分复用功能,使有限的频带能容纳更多的信道,提高频谱利用率.该器件信道中心波长精确稳定,信道隔离度较大,插入损耗小而均匀,信道间信号串扰小.     

双重势垒一维光子晶体量子阱的光传输特性研究

利用传输矩阵法,研究单势垒和双重势垒一维光子晶体量子阱结构的光传输特性.结果表明:垒层折射率总和大的单势垒光量子阱的透射峰更加精细,内部局域电场更加强;双重势垒光量子阱的透射峰比单势垒光量子阱的透射峰精细,内部局域电场也比单势垒光量子阱的强;随着垒层光子晶体周期数增大,双重势垒光量子阱内部局域电场增强,而且垒、阱层折射率总和之比越大,双重势垒光量子阱的内部局域电场增强速度越快,当双重垒层光子晶体周期数同时增大时,双重势垒量子阱内部局域电场增强速度最快,透射峰越加精细.随着阱层光子晶体周期数的增大,单势垒或双重势垒光量子阱的内部局域电场强度均下降,但透射峰的透射率不随之改变.该特性为设计新型可调高品质的量子光学器件提供指导.     

双重势垒一维光子晶体量子阱内部局域电场分布

利用传输矩阵法理论,研究了双重势垒一维光子晶体量子阱(AB)k(CD)m(DCD)n(DC)m(BA)k的内部局域电场.结果表明:双重势垒光量子阱内部分布着很强的局域电场,且越靠近阱中心,局域电场越强;双重势垒光量子阱垒层特别是内垒层和外垒层厚度同时增大时,内部局域电场快速增强,而且阱中心增强最明显;双重势垒光量子阱阱层宽度增大时,越靠近阱中心,局域电场越强,但阱宽按偶数倍增大时阱中心的局域电场不变并保持恒定极大值,而阱宽按奇数倍增大到一定数值后,光量子阱内部局域电场则趋于阱宽按偶数倍增大时的局域电场恒定极大值.该研究可为分析光量子势阱的量子化效应机理和分立透射谱的形成内因,以及量子光学产品的实际设计等提供指导.     

用于光催化领域的TiO_2与一维光量子阱复合结构的设计与优化

利用传输矩阵法设计并优化了用于光催化领域的TiO_2与一维光量子阱的复合结构,并分析了ZnS/SiO_2多层膜量子阱结构的透射特性.通过调节一系列的结构参数,在TiO_2光吸收波段(329.23 nm～482.71 nm)得到一个较宽的高反射率带隙,并且在吸收边附近(380 nm左右)得到了一个反射率高于93%的慢光子效应区.通过增加光线与TiO_2的作用时间和路径来提高光催化效率.     

应变多量子阱激光器的阱数与腔长

本文从理论上分析计算并给出了应变多量子阱激光器阱数与腔长的优化设计结果.考虑到多生子阱阱区的注入不均匀性,提出了一种新的分析和计算方法.以1.55μmInGaAs(P)1.5%压缩应变多量子阱激光器为例,最佳的阱数为4个,最佳腔长为500μm左右.     

Single photon sources with single semiconductor quantum dots

In t.his contribution, we briefly recall the basic concepts of quantum optics and properties of semicon- ductor quantum clot. （QD） which a.re necessary to the nnderstanding of the physics of single-photon generation with single QDs. Firstly, we address the theory of quantmn emitter-cavity system, the fluorescence and optical properties of semiconductor QDs, and the photon statistics as well as opti- cal properties of the QDs. We then review the localizatioll of single semiconductor QDs in quantum confined optical microcavity systems to achieve their overall optical properties and perfornances in terms of strong coupling regime, elfieiency, directionality, and polarization control. Furthermore, we will discuss the recenl, progress on the fabrication of single photon sources, and various a.pproaehes for embedding single QDs into mieroca,vities or photonic crystal nanoeavities and show how to ex- tend the wavelength range. We focus in part;icular on new generations of electrically driven QD single photon source leading to high repetition rates, efficiencies at elevated temperature operation. Besides strong eoupling regime, and high collection new development;s of room temperature sin- gle photon emission in the strong coupling regime are reviewed. The generation of indistinguishable photons and remaining challenges for pract ical single-photon sources are also discussed.     

二维光子晶体量子阱的光谱特性研究

研究了二维光子晶体量子阱的光谱特性,该量子阱结构由二维正方晶格圆柱晶胞光子晶体通过移去中间位置的介质圆柱层形成。由于光子晶体中的光子禁带充当了光子运动的势垒,类似于半导体量子阱中电子的行为,在光子晶体量子阱结构中会出现量子化的光子能态。文章利用平面波展开法计算了所用光子晶体的能带结构,利用传输矩阵方法计算了量子阱结构的透射光谱。计算结果表明,在光子禁带中出现了离散的透射峰,透射峰的强度随着势垒宽度的增加而减弱,个数随着势阱宽度的增加而增加,通过计算得到了其定量关系,并且讨论了透射峰频率与势阱宽度的关系。     

On‐chip single photon sources using planar photonic crystals and single quantum dots

We review the basic light‐matter interactions and optical properties of chip‐based single photon sources, that are enabled by integrating single quantum dots with planar photonic crystals. A theoretical framework is presented that allows one to connect to a wide range of quantum light propagation effects in a physically intuitive and straightforward way. We focus on the important mechanisms of enhanced spontaneous emission, and efficient photon extraction, using all‐integrated photonic crystal components including waveguides, cavities, quantum dots and output couplers. The limitations, challenges, and exciting prospects of developing on‐chip quantum light sources using integrated photonic crystal structures are discussed.     

CdSe/ZnSe复合结构非对称量子阱的发光特性

利用MOCVD技术在GaAs衬底上外延生长了非对称量子阱结构CdSe/ZnSe材料,通过对其稳态变温光谱及变激发功率光谱,研究了其发光特性。稳态光谱表明:在82～141K时,观测到的两个发光峰来源于不同阱层厚度的量子阱激子发光,用对比实验验证了高能侧发光的来源。宽阱发光强度先增加后减小,将其归结为激子隧穿与激子热离化相互竞争的结果。通过Arrhenius拟合,对宽阱激子热激活能进行了计算。82K时变激发功率PL光谱表明:由于激子隧穿的存在,使得窄阱发光峰位不随激发功率变化而变化,宽阱发光峰位随激发功率增加发生了蓝移,并对激子隧穿进行了实验验证。     

含负折射率缺陷的光量子阱的透射特性及理论模拟

利用转移矩阵方法对含负折射率缺陷的一维光子晶体量子阱结构的透射特性进行了研究。结果表明,当缺陷为偶数个时,结构透射谱中有两个透射峰;当缺陷为奇数个时,透射谱中只有中心处一个透射峰,且随着缺陷层数的增加,该处峰的品质因子逐渐提高。因电磁波在缺陷处的强烈局域,所以阱中局域态的透射率对缺陷的折射率有很强的依赖作用。通过控制入射光的强度可使缺陷的折射率发生微小的改变,进而使局域态的透射率发生明显改变,这样就可制作高效光开关。     

Optical knobs from slow- to fast-light with gain in low-dimensional semiconductor heterostructures

The light pulse propagation through semiconductor quantum-well heterostructures under realistic experimental conditions is studied analytically with the Schrödinger equations. It is shown that slow light and superluminal propagation with gain can be observed by varying the relative phase and the strength of the applied fields. Such investigation may open up the possibility to control the light propagation and may lead to potential applications such as high-fidelity optical delay lines, optical buffers and optical communication in quantum wells solid materials.     

Novel effects in extremely broadband semiconductor optical amplifiers with non-identical quantum wells

An extremely broad emission spectrum is obtained for semiconductor optical amplifiers with multiple quantum wells fabricated on the substrate. The spectral width is nearly 400 nm (1200–1600 nm), which covers the entire usable bandwidth of an optical fiber. Broadband characteristics allow observing three novel effects: (i) the bi-directional guided effect of lasing mode in a bent waveguide of semiconductor optical amplifiers, (ii) the optical switching effect in one semiconductor optical amplifier for optical communication band, and (iii) the effect of separate confinement heterostructure layer thickness.     

Phase-controlled gain-assisted slow light propagation in three-coupled quantum wells

The low-intensity light pulse propagation through three-coupled semiconductor quantum wells is studied with the Schrödinger equations. Phase-controlled slow light propagation with little gain is observed in this system. For its flexible design and its wide adjustable parameters, such a semiconductor system is better than its atomic counterpart. Such investigation of properties may provide a new way for realizing slow light and lead to important applications in high-fidelity optical delay lines and optical buffers.     

Optical Conductivity of Impurity-Doped Parabolic Quantum Wells in an Applied Electric Field

The optical conductivity of impurity-doped parabolic quantum wells in an applied electric field is investigated with the memory-function approach, and the analytic expression for the optical conductivity is derived. With characteristic parameters pertaining to GaAs/Ga_1-xAl_xAs parabolic quantum wells, the numerical results are presented. It is shown that, the smaller the well width, the larger the peak intensity of the optical conductivity, and the more asymmetric the shape of the optical conductivity; the optical conductivity is more sensitive to the electric field, the electric field enhances the optical conductivity; when the dimension of the quantum well increases, the optical conductivity increases until it reaches a maximum value, and then decreases.