Current-voltage characteristics for a Peierls-conducting point contact

Current-voltage (J-V) and differential-conductivity-voltage ( dJ/dV-V) characteristics are analytically calculated at zero temperature for a point contact consisting of: two Peierls conductors P ( = 1, 2) separated by an insulator (I). Here P is a conductor with charge density wave (CDW). The J-V and dJ/dV-V characteristics depend on the CDW phases ( = 1, 2) in the mean field approximation. To calculate them analytically we assumed, = ≡Δ where ( = 1, 2) are the energy gaps of P ( = 1, 2). The current J has a discontinuous jump at eV = 2Δ for ϕ ₁ = ϕ ₂≠ 0. The differential conductivity dJ/dV has a singularity at eV = 2Δ for ϕ ₁ = ϕ ₂≠ 0. The relation J(V,ϕ ₁,ϕ ₂) = - J(- V,ϕ ₁ + π,ϕ ₂ + π) is obtained. Received 4 July 2001 and Received in final form 13 September 2001     

Current-voltage characteristics of SIS structures with localized states in the material of the barrier layer

Elastic resonant tunneling through a single localized state in an insulating layer (I-layer) situated in the constriction zone between two thick superconducting electrodes is investigated theoretically, and the current-voltage characteristic (IVC) of the structure is calculated. The accompanying analysis leads to the prediction that an appreciable current can flow through the structure, not at |eV|=2Δ (Δ is the modulus of the order parameter of the superconducting electrodes) as in the case of an ordinary SIS junction, but at |eV|⩾Δ, and also that the IVC can acquire segments of negative differential resistance in the case of tunneling through a single localized state. Averaging of the IVC over an ensemble of localized states distributed uniformly throughout the volume of the I-layer and with respect to the energy near the chemical potential min the limit Γ₀/Δ≫1 (Γ₀ is the half-width of the resonance line of the localized state) produces a smaller excess current than in a junction of the SNS type. It is shown that the IVC’s exhibit a transition from an excess current to a deficit current as Γ₀ decreases in the high-voltage range. Zh. éksp. Teor. Fiz. 114, 687–699 (August 1998)     

Strong isospin violation andη−π mixing in |ΔS|=1 weak transition

We consider the effects ofη−π mixing on the violation of the |ΔI|=1/2 rule in |ΔS|=1 weak transitions. The processes considered are theK→2π,K→3π, Λ, Ξ and Λ hyperon decays.     

Generating power of a thermoelectric generator under periodically alternating temperature gradients

The thermo-emf ΔV and thermoelectric current ΔI generated by imposing a temperature gradient alternating at a period of T on a thermoelectric (TE) generator were measured as a function of t, where t is the lapsed time and 1/T was varied from 0 to 1/30 s^-1. A TE generator was sandwiched between two Peltier modules connected in series. The alternating temperature gradients were produced by imposing an alternating voltage V on two Peltier modules, where V was varied from 1.0 to 3.7 V. Both ΔV and ΔI generated by the TE generator oscillate at a period of T but their amplitudes tend to increase monotonically with an increase of V. The effective thermo-emf ΔV_eff and current ΔI_eff calculated from ΔV and ΔI increase abruptly with an increase of 1/T and have a local maximum at 1/T=1/120 or 1/240 s^-1. The generating power ΔW_eff(=ΔV_effΔI_eff) tends to increase proportionally with an increase of input power W_input, owing to the increase in the temperature difference. The rate of ΔW_eff to W_input at 1/T=1/240 s^-1 reached approximately 3.2 times as large as that obtained for the steady temperature gradient corresponding to 1/T=0 s^-1. It was thus found that the generating power of the TE generator operating under the temperature gradient alternating at an optimum period is remarkably increased compared to that of a TE generator working under a conventional steady temperature gradient. PACS 72.15.Jf; 84.60.Rb; 85.30De     

Variation of interface trap level charge density within the bandgap of 4H-SiC with varying oxide thickness

Interfacial characteristics of metal oxide-silicon carbide (MOSiC) structure with different thickness of SiO₂, thermally grown in steam ambient on Si-face of 4H-SiC (0 0 0 1) substrate were investigated. Variations in interface trapped level density (D _it) was systematically studied employing high-low (H-L) frequency C–V method. It was found that the distribution of D _it within the bandgap of 4H-SiC varied with oxide thickness. The calculated D _it value near the midgap of 4H-SiC remained almost stable for all oxide thicknesses in the range of 10⁹–10¹⁰ cm⁻² eV⁻¹. The D _it near the conduction band edge had been found to be of the order of 10¹¹ cm⁻² eV⁻¹ for thicker oxides and for thinner oxides D _it was found to be the range of 10¹⁰ cm⁻² eV⁻¹. The process had direct relevance in the fabrication of MOS-based device structures.     

predictions of PMNS and CKM angles

Generalizing a previous model to accommodate the third quark family and CP violation, we present a T^′ model which predicts tribimaximal neutrino (PMNS) mixings while the central predictions for quark mixings are |V_td/V_ts|=0.245 and |V_ub/V_cb|=0.237 with a predicted CP violating KM phase δ_KM=65.8°. All these are acceptably close to experiment, including the KM phase for which the allowed values are 63°<δ_KM<72°, and depend only on use of symmetry T^′×Z₂ to define the model and no additional parameters.     

Possible molecular states of D*s[`(D)]*sD^{*}_{s}\bar{D}^{*}_{s} system and Y(4140)

The interpretation of Y(4140) as a D^*_s[`(D)]<sup>*</sup><sub>s</sub>D^{*}_{s}\bar{D}^{*}_{s} molecule is studied dynamically in the one boson exchange approach, where σ, η and φ exchange are included. Ten allowed D<sup>*</sup><sub>s</sub>[`(D)]^*_sD^{*}_{s}\bar{D}^{*}_{s} states with low spin parity are considered, and we find that the J ^PC =0⁺⁺, 1⁺⁻, 0⁻⁺, 2⁺⁺ and 1⁻⁻ D^*_s[`(D)]<sup>*</sup><sub>s</sub>D^{*}_{s}\bar{D}^{*}_{s} configurations are most tightly bound. We suggest that the most favorable quantum numbers are J <sup>PC</sup> =0<sup>++</sup> for Y(4140) as a D<sup>*</sup><sub>s</sub>[`(D)]^*_sD^{*}_{s}\bar{D}^{*}_{s} molecule; however, J ^PC =0⁻⁺ and 2⁺⁺ cannot be excluded. We propose to search for the 1⁺⁻ and 1⁻⁻ partners in the J/ψ η and J/ψ η′ final states, which is an important test of the molecular hypothesis of Y(4140) and the reasonability of our model. The 0⁺⁺ B^*_s[`(B)]^*_sB^{*}_{s}\bar{B}^{*}_{s} molecule should be deeply bound; experimental search in the ϒ(1S)φ channel at Tevatron and LHC is suggested.     

Tails in harnesses

We consider space- and time-uniformd-dimensional random processes with linear local interaction, which we call harnesses and which may be used as discrete mathematical models of random interfaces. Their components are rea random variablesa _s ^t , wheres ∈ Z ^d andt=0, 1, 2.,... At every time step two events occur: first, every component turns into a linear combination of itsN neighbors, and second, a symmetric random i.i.d. “noise”v is added to every component. For any σ ∈Z _d ⁺ define Δ_σ a′ _s as follows. If σ=(0,...,0), σ=(0,...,0), Δ_σ a _s ^t =a _s ^t . Then by induction, wheree _i is thed-dimensional vector, whoseith component is one and other components are zeros. Denote |σ| the sum of components of σ. Call a real random variable ϕ symmetric if it is distributed as −ϕ. For any symmetric random variable ϕpower decay or P-decay is defined as the supremum of thoser for which therth absolute moment of ϕ is finite. Convergence a.s., in probability and in law whent→∞ is examined in terms of P-decay(v): Ifd=1, σ=0 ord=2, σ=(0,0), Δ_σ a _s ^t diverges. In all the other cases: If P-decay(v)<(d+2)/(d+|σ|), Δ_σ a _s ^t diverges; if P-decay(v)>(d+2)/(d+|σ|), Δ_σ a _s ^t , converges and P-decay(ν) For any symmetric random variable ϕexponential decay or E-decay is defined as the supremum of thoser for which the expectation of exp(|x|^r) is finite. Let E-decay(v)>0. Whenever Δ_σ a _s ^t converges (that is, ifd>2 or |σ|>0: Ifd>2, E-decay(lima _s ^t )=min(E-decay(v),d+2/2); if |σ|=1, E-decay (lim Δ_σ a _s ^t )=min(E-decay(ν),d+2); if |σ| ⩾, E-decay (lim Δ_σ a _s ^t )=E-decay(ν).     

Non-cubic Mn2+-centers in BaF2

The EPR spectra of thermally treated BaF₂: Mn samples is reported. After thermal annealing at 900 K a trigonal Mn²⁺ center with g=2.000±0.005, |D|=2725±40MHz, |A|=265±10MHz, $\text{D}\text{A}\text{>0}$, is observed. Annealing at 1200 K produces an orthorhombic Mn²⁺ center with g=2.00±0.01, |D|=2430±40MHz, |E|=570±20MHz, |A|=265±10MHz, $\text{D}\text{A}\text{<0}$. The superhyperfine (SHF) structures due to interactions with the neighbouring fluorines indicates that the trigonal manganese interacts with four fluorines, three of them equivalent. The orthorhombic Mn²⁺ shows interaction with four equivalent fluorine nuclei.     

EPR of a non-Kramers iron ion in KTaO3

The EPR spectrum of the non-Kramers iron ion Fe⁴⁺ (S=2) in a KTaO₃:Fe crystal appearing after illumination of the sample in the visible has been detected and studied. Because of the large initial splitting (|D|=4.15 cm⁻¹), only transitions within the |±1〈 and |±2〈 doublets are seen experimentally. Superhyperfine structure in the spectrum of a non-Kramers ion in perovskites has been detected for the first time. A structure is proposed for the center responsible for the new EPR spectrum, which represents a complex of a Fe₄₊ ion substituting for Ta with an oxygen vacancy at the nearest anion site. Fiz. Tverd. Tela (St. Petersburg) 41, 1424–1427 (August 1999)     

The sign of interband interaction and stability of the superconducting ground state in the multiband model

Summary It is stressed that the stability of the superconducting ground state in the two-band model is guaranteed for both signs of the leading interband interactionW. Thereby the requirement for the energy minimum fixed the phase differences of two order parameters as |ϕ₁-ϕ₂|=0,2π, … ifW<0 and |ϕ₁-ϕ₂|=π 3π, … ifW>0, and this difference is reflected in the ground-state wave function.     

Characteristic features of the formation of the resistive state in a Bi2Sr2CaCu2Oy crystal

The effect of a magnetic field H⊥(ab) on the transverse current-voltage characteristics (IVCs) of the mixed state of a single crystal of the layered superconductor Bi₂Sr₂CaCu₂O_y (BSCCO) is investigated. It is established that in a wide range of temperatures and fields above the irreversibility line the initial part of the IVC is described by the law V∝I ^γ with γ≃1. As the current increases further, this law is replaced by a section where V∝exp(I). It is established that the multivalued, multibranch characteristics, interpreted as a manifestation of an internal Josephson effect, do not change appreciably when the crystal passes into a state with nonzero linear resistance. The character of the dependence of the characteristic switching current on the first resistive branch, I _J (H,T), is determined. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 8, 543–548 (25 October 1999)     

Zeros of the Jones Polynomial for Multiple Crossing-Twisted Links

Let D be a general connected reduced alternating link diagram, C be the set of crossings of D and C′ be the nonempty subset of C. In this paper we first define a multiple crossing-twisted link family {D ⁿ (C′)|n=1,2,…} based on D and C′, which produces (2,2n+1)-torus knot family, the link family A _n defined in Chang and Shrock (Physica A 301:196–218, 2001) and the pretzel link family P(n,n,n) as special cases. Then by applying Beraha-Kahane-Weiss’s Theorem we prove that limits of zeros of Jones polynomials of {D ⁿ (C′)|n=1,2,…} are the unit circle |z|=1 (It is independent of the selections of D and C′) and several isolated limits, which can be determined by computing flow polynomials of subgraphs of G corresponding to D. Furthermore, we use the method of Brown and Hickman (Discrete Math. 242:17–30, 2002) to prove that, for any ε>0, all zeros of Jones polynomial of the link D ⁿ (C) lie inside the circle |z|=1+ε, provided that n is large enough. Our results extend results of F.Y. Wu, J. Wang, S.-C. Chang, R. Shrock and the present authors and refine partial result of A. Champanerkar and L. Kofman.     

Effect of series resistance on the performance of silicon Schottky diode in the presence of tin oxide layer

The current–voltage (I–V) characteristics of Al/SnO₂/p-Si (MIS) Schottky diodes prepared by means of spray deposition method have been measured at 80, 295 and 350 K. In order to interpret the experimentally observed non-ideal Al/SnO₂/p-Si Schottky diode parameters such as, the series resistance R_s, barrier height Φ_B and ideality factor n, a novel calculation method has been reported by taking into account the applied voltage drop across interfacial oxide layer V_i and ideality factor n in the current transport mechanism. The values obtained for V_i were subtracted from the applied voltage values V and then the values of R_s were recalculated. The parameters obtained by accounting for the voltage drop V_i have been compared with those obtained without considering the above voltage drop. It is shown that the values of R_s estimated from Cheung’s method were strongly temperature-dependent and decreased with increasing temperature. It is shown that the voltage drop across the interfacial layer will increase the ideality factor and the voltage dependence of the I–V characteristics. The interface state density N_ss of the diodes has an exponential growth with bias towards the top of the valance band for each temperature; for example, from 2.37 × 10¹³ eV⁻¹ cm⁻² in 0.70−E_v eV to 7.47 × 10¹³ eV⁻¹ cm⁻² in 0.62−E_v eV for 295 K. The mean N_ss estimated from the I–V measurements decreased with increasing the temperature from 8.29 × 10¹³ to 2.20 × 10¹³ eV⁻¹ cm⁻².     

A GaAs MISFET with Ge3N4 gate dielectric

GaAs MIS field effect transistors with a Ge₃N₄ dielectric gate have been investigated. No hysteresis loop and drain current drift has been observed in theI _D -V _Dcharacteristics. However, performance of the devices have been found to be limited by the contact resistance. FromI _DS ^1/2 -V _G plot, the threshold voltage and effective channel mobility of the transistor have been obtained as -4.5V and 2800cm²v^–1s^–1, respectively. A maximum dc transconductance of 68 mS/mm of gate width has been achieved.     

Measurement of pionium lifetime with the Dirac spectrometer

Pionium ( π ⁺ π ^- bound state) lifetime is measured with improved precision with respect to earlier work, and the ππ s-wave scattering length difference between I = 0 and I = 2 amplitudes | a ₀ - a ₂| is determined to 5% precision.     

Formation and quenching mechanisms of excited particles in an oxygen-iodine laser medium

New values of a number of kinetic constants of processes proceeding in oxygen-iodine laser media are presented. The total probabilities of formation of I₂(X, 15 ≤ v ≤ 24) and I₂(X, 25 ≤ v ≤ 47) molecules in the course of quenching of I* atoms by I₂(X) are found to be 0.9 and 0.1, respectively. The quantum yield of singlet oxygen in the reaction O(¹ D) + N₂O → N₂ + O₂(a ¹Δ) is close to 100%. The quenching rate constants of I₂(A’) by O₂, H₂O, CO₂, I₂, and Ar and of I(² P _1/2) by O(³ P), O₃, NO₂, N₂O₄, and N₂O are presented.     

Nuclear fusion rates from resonant states of 3Hedμ molecular ion

We present new theoretical calculations of nuclear fusion rates λ _f ^J from the resonant states of the muonic molecular ion ³Hedμ ⁺⁺ with total angular momenta J=0,1. As a byproduct, new very accurate variational wave functions for these states have been obtained. Using these wave functions, the probability density |Ψ(R=0)|² in a fusion region has been calculated by extrapolating the variational solution to small internuclear distances by means of the multi-channel adiabatic solution. Calculated fusion rates for the states J=0 and J=1 are: λ _f ⁰ =1.9·10⁵s^-1 and λ _f ¹ =0.65·10³s^-1, respectively. This revised version was published online in August 2006 with corrections to the Cover Date.     

Beauty-conserving strangeness-changing rare semileptonic decays ofB s meson

The beauty-conserving strangeness-changing decays ofB _s meson are examined. In the charm sector, charm-conserving strangeness changing (Δc = 0, Δs ≠ 0) decays are Cabibbo suppressed and are governed by the CKM elementV _us which is much smaller than the CKM diagonal elementV _cs, so may be of little interest. On the other hand, in theb-sector, beauty-conserving strangeness changing (Δb = 0, Δs ≠ 0) decays are CKM allowed as the CKM matrix elementV _us governing such decays is much larger thanV _bc orV _bu which govern respectively theb →c orb →u transitions. The phase space available, however, is too small for the decays considered here. The numerical estimates for the decay widths of two such modes ofB _s meson are presented.     

New physics hints in B decays and collider outlook

There are currently two hints for new physics involving CP violation in b → s transitions: ΔS ≡ S _f − S _J ^ϕK ≠ 0, and difference in direct CP asymmetry ΔA _Kπ ≡ A _K+π ⁰ − A _K+π ⁻ ≠ 0. We explore the two scenarios with a large and unique new CP phase in b ↔ s transitions. Motivated by ΔS ≠ 0, we update on the right-handed strange-beauty squark sb _1R at TeV scale. Motivated by ΔA _Kπ ≠ 0, we explore sequential fourth generation t′ and b′ quarks. Both scenarios can survive constraints such as SM level b → sγ, sll and B _s mixing, and predict sizable CP violation in B _s mixing. The fourth generation picture predicts sizable K _L → π ⁰ vv. Direct search for sb _R, b′ and t′ at hadronic colliders, such as Tevatron Run II and LHC, can complement further CP violation studies at these machines, as well as at the future Super B factory.