Diode-Pumped Self-Q-Switched Cr,Nd：YAG Laser with High Average Output Power

A diode end-pumped self-Q-switched Cr,Nd:YAG laser was established with pulse duration in the range of 8-10ns. The maximum average output power was 4.4 W and the slope efficiency was 27% using an output coupler of R=70%. At pumping power of 17.4 W the laser produces high-quality pulses at 1064 nm in a TEMoo-mode.     

Diode-Pumped Passive Q-Switched 946-nm Nd：YAG Laser with 2.1-W Average Output Power

We demonstrate a diode-pumped passive Q-switched 946nm Nd: YAG laser with a diffusion-bonded composite laser rod and a co-doped Nd, Cr:YAG as saturable absorber. The average output power of 2.1 W is generated at an incident pump power of 14.3 W. The peak power of the Q-switched pulse is 643 W with 80kHz repetition rate and 40.8 ns pulse width. The slope efficiency and optical conversion efficiency are 17.6% and 14.7%, respectively.     

High Power Diode-End-Pumped Nd：YAG 946-nm Laser and Its Efficient Frequency Doubling

We report a high power operation of the ^4Fa/2 → ^4I9/2 transition in diode-end-pumped laser at 946nm. The maximum output of 5.1 W is obtained with a short linear plano-concave cavity, and the slope efficiency is 24.5% at incident pump power of 23.3 W. To our knowledge, this is the highest value of the LD-pumped Nd:YAG 946 nm lasers that employ the conversional Nd:YAG rod as the gain medium. By intracavity frequency doubling with an LBO crystal, up to 982mW cw output power in the blue spectral range at 473nm is achieved at an incident pump power of 10.9 W with a compact three-element cavity, leading to optical-to-optical conversion efficiency of 9%. The conversion efficiency should be increased to 15.1%, if the rather low absorption coefficient of this Nd:YAG is considered.     

400mJ二极管泵浦Nd：YAG圆棒激光器

400mJ二极管泵浦Nd：YAG圆棒激光器采用主振荡器 放大器方式。谐振腔采用失调低灵敏度单横模设计，以减少外界环境干扰和机械振动，提高激光器的稳定性。谐振腔采用平凹腔，谐振腔腔长0．6m，Nd：YAG棒为φ2，谐振腔基模腰斑半径为0．5mm。泵浦模块采用5个二极管激光器环形对称泵浦，根据实验测得的泵浦模块热焦距f=0．53m，采用一对平凹负透镜进行补偿，补偿后的泵浦模块热焦距为2．0m，谐振腔全反射镜的曲率半径为1．02m，离泵浦模块中心的距离0．24m。     

Edge-pumped passively Q-switched thin Nd:YAG slab lasers

We report a high-power thin Nd：YAG slab laser with slab dimension of 1 × 10 ×60 （mm） partially edgepumped by diode laser arrays. Passive Q-switching is achieved with a Cr^4＋ ：YAG microchip adopted as the saturable absorber mirror. The pulse duration is around 10 ns while the pulse repetition rate is higher than 10 kHz. The average output power of 70 W is obtained with a slope efficiency of 36%. The diffraction limited beam quality in the thickness direction is obtained by controlling the pump beam diameter inside the slab. The laser head is very compact with size of only 60 × 74×150 （mm）.     

Diode-Pumped Passive Q-Switched 946 nm Nd：YAG Laser with a GaAs Saturable Absorber

We report, for the first time to our knowledge, a diode-pumped passive Q-switched 946nm Nd：YAG laser by using a GaAs as saturable absorber. The maximum average output power is 1.24 W at an incident pump power of 15 W, corresponding to a slope efficiency of 10%. Laser pulses with pulse duration of 70ns and repetition rate of 330 kHz are generated.     

Laser Diode-Pumped Nd：LuVO4 Acousto-Optic Q-Switched Laser at 916 nm

A compact laser diode-pumped solid-state Nd：LuVO4 acousto-optic Q-switched laser is demonstrated at 916 nm of a quasi-three level for the first time. A pulse width of 130ns is observed when the pulse-repetition frequency is 10 kHz. The laser experiment shows that the Nd：Lu VO4 crystal can be used for efficient diode-pumped Q-switched lasers.     

LD泵浦的Nd：YAG微片激光器实验研究

详细讨论了激光二极管泵浦的Ｎｄ：ＹＡＧ微片激光器输出的纵，横模特性，当泵浦功率小于７４０ｍＷ时，输出为单纵模，基横模，线宽达到仪器分辨极限２５ＭＨｚ。     

Green Output of 1.5 W from a Diode-Pumped Intracavity Frequency-Doubled Self-Q-Switched and Mode-Locked Cr,Nd：YAG Laser

We report a diode-pumped intracavity frequency-doubled self-Q-switched and mode-locked Cr,Nd：YAG/KTP green laser with a Z-type cavity, which produces 1.5 W of average power at 532nm with incident pump power 14.2 W. The individual mode-locked green pulse duration is about 560ps with 149 MHz repetition rate. Almost 100% modulation depth of the mode-locked green pulses is achieved at an incident pump power of 4.13 W. The maximum energy of Q-switched green pulse is 19.8μJ. The experimental results of pulse duration and pulse energy of Q-switched green pulse agree well with the theoretical calculations.     

Diode-Pumped Passively Q-Switched Yb：YAG Microchip Laser with a GaAs as Saturable Absorber

A passively Q-switched Yb: YAG microchip laser has been constructed by using a doped GaAs as the saturable absorber as well as the output coupler. At 13.5 W of pump power the device produces high-quality 3.4μJ 52ns pulses at 1030nm with a pulse repetition rate of 7.8 kHz in a TEM00-mode.