共查询到15条相似文献,搜索用时 57 毫秒
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本文用差热分析法和高温、室温X射线衍射法对Li3VO4,Li4SiO4的相变过程,Li3VO4-Li4SiO4,Li3O4-Li-4GeO4赝二元系相图以及Li3VO4-Li4SiO4-Li4GeO4赝三元系相图室温截面进行了研究。发现在Li3VO4-Li4SiO4,Li3VO4-Li4GeO4赝二元系中,由于Li4SiO4或Li4GeO4的加入而使Li3VO4的高温γII相稳定存在于室温,从而得到一种新的具有高电导率的锂离子导体。作者认为探寻使高温态稳定存在于室温的方法是探索新的离子导体研究中有效途径之一。
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本文在室温到300℃的温度范围内研究了Li_4SiO_4-Li_3VO_4和Li_4GeO_4-Li_4SiO_4-Li_3VO_4体系中的离子导电性,发现γ_(II)相固溶体Li_(3 x)V_(1-x)Si_xO_4是好的锂离子导体。所研究的成分中Li_(3.3)V_(0.7)Si_(0.3)O_4的离子电导率最高,室温下为1×10~(-5)Q~(-1)·cm~(-1),在42—192℃的电导激活能为0.36eV,电子电导率可以忽略,因而这是迄今所发现的最好的锂离子导体之一。粗略确定了Li_4GeO_4-Li_4SiO_4-Li_3VO_4三元系中电导率高的范围,发现在Li_(3.5)V_(0.5)Ge_(0.5)O_4中Si部分取代Ge可以使电导率进一步提高,Li_(3.5)V_(0.5)Ge_(0.4)Si_(0.1)O_4的室温电导率可达1.3×10~(-5)Q~(-1)·cm~(-1),电导激活能为0.40eV。 相似文献
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在150—573K温度范围内,研究了固溶体Li3VO4-Li4TO4(T=Ge,Si)系统不同成分的7Li的NMR谱。发现γII相固溶体室温7Li的NMR线宽和自旋晶格弛豫时间T1的值都比Li4GeO4,Li4SiO4和Li3VO4小约一个数量级。这表明在γII相固溶体离子导体中,Li+离子运动有可能比固溶前有数量级增长。同时还发现7Li的电四极分裂伴线数随成分和温度而异,以及伴线强度百分比依赖于温度。这反映γII相的不同成分中,间隙Li+离子占有的不等价位置个数不同,而Li+离子在每个不等价位置上的占有率又随温度而变化。
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采用程序升温热解吸(TPD/TDS)方法对Li4SiO4陶瓷小球的水解吸行为进行了实验研究。结果表明:水解吸过程中主要存在四个解吸峰;其中100 ℃附近的峰可解释为物理吸附水;150,250,400 ℃附近的峰可分别解释为以氢键、Li-OH和Si-OH配位键形式存在的化学吸附水。氚的释放与水的解吸几乎同步进行,且氚的释放形式主要为氚水(HTO),据此推测,氚水可能存在三种释放机制:(1)-OT+H2O-OH+HTO;(2)-OH+-OHH2O,-OT+H2O-OH+HTO;(3)-OT+-OHHTO。 相似文献
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本文用差热分析和X射线衍射方法,对LiNaSO_4-MgSO_4赝二元系相图进行了研究。在此体系中存在三个化合物,它们分别为(LiNa)_(0.8)Mg(0.2)SO_4,(LiNa)_(0.67)Mg_(0.33)SO_4和(LiNa)_(0.4)Mg_(0.6)SO_4。 研究了三种化合物的离子导电性,在490℃时上述三个化合物的电导率分别为6.1×10~(-5),6.5×10~(-5),9.8×10~(-6)S·cm~(-1),它们的表现电导激活能分别为1.67,1.48和1.32eV。 用这三个化合物作电解质制作了原理性的Mg/MnO_2高温热电池,结果表明Mg/(LiNa)_(0.8)·Mg_(0.2)SO_4/MnO_2电池有较好的极化性能和放电特性,因而(LiNa)_(0.8)Mg_(0.2)SO_4有可能在高温热电池中获得应用。 相似文献
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本文采用红外吸收光谱法、X射线散射法和EXAFS方法研究了LiO-Nb2O-SiO2系统非晶态离子导体的结构,认为Nb5+在非晶结构网络中主要是以[NbO6]形式存在。非晶结构随Nb2O5含量的多少而变化。低Nb2O5含量时,[NbO6]相互间以边相连,并与[SiO4]组成多元环后,形成非晶网络结构。高Nb2O5含量时,非晶网络结构主要是以角顶相连的[NbO6]所组成。根据电导测试结果,讨论了结构与电学性能的关系,认为Li2O含量在0.45左右,Nb2O5,含量在0.3左右组成的非晶材料有最高的电导率。
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In the system Li4SiO4-Li3AsO4, Li4SiO4 forms a short range of solid solutions containing up to 14 to 20% Li3AsO 4, depending on temperature, and γ-Li3AsO4 forms a more extensive range of solid solutions containing up to ≈55% Li4SiO4. The Li4SiO4-Li3AsO4 phase diagram has been determined and is of binary eutectic character. The ac conductivity of polycrystalline samples was measured over the range 0 to at least 300°C for nine different compositions. The two solid solution series have much higher conductivity than the pure end-members; maximum conductivity was observed in the γ-Li3AsO4 solid solutions containing ≈40 to 55% Li4SiO4, with values of at 20°C rising to ≈0.02 Ω?1 cm?1 at 300°C. These values are comparable to those found in the system Li4SiO4-Li3PO4. The variation with composition of the Arrhenius prefactor and activation energy has been interpreted in terms of the mechanisms of conduction. Li3AsO4 is a poor conductor essentially because the number of mobile Li+ ions is very small. This number, and hence the conductivity, increases dramatically on forming solid solutions with Li4SiO4, by the creation of interstitial Li+ ions. At ≈40 to 55% Li4SiO4, the number of mobile Li+ ions appears to be optimised. An explanation for the change in activation energy of conduction at ≈290°C in Li4SiO4 and at higher temperatures in Li4SiO4 solid solutions is given in terms of order-disorder of the Li+ ions. 相似文献
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用固相反应法、X射线粉末衍射技术和复平面阻抗谱测量研究了BaF2-BiF3系统的相组成和离子电导。在此系统中发现了两种类型的Ba1-xBixF2+x固溶体:萤石型(0s≈0.5(141/2)aF,cs<
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本文研究了非晶态离子导体Li2B2O4的离子电导率与温度的关系,特别着重于晶化前期的离子迁移特性。当温度低于TK(≈310℃)时,离子电导率遵从Arrhenius关系。当高于晶化温度(≈411℃)时,以晶态中的离子迁移为主。在Tkc时,电导率偏离热激活机制呈反常增高。我们把这一过程称为晶化前期过程。可以用自由体积模型进行描述。晶化前期又可分为两部分:当温度低于、Tp(≈380℃)时,由于自由体积的重新分布,导致了电导率的增高;当T>Tp时,出现了少量微晶,但晶化量小于5%,由于非晶母体与微晶之间的界面效应使得离子导电性显著增强。可以通过室温淬火,把晶化前期非晶态的状态保持到室温,从而有可能制备出离子电导率高于纯非晶态的材料。
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A wide variety of solid solutions with a structure related to that of γ Li3PO4 may be prepared. These include materials such as lisicon, Li2+2xZn1-xGeO4 and the title systems, many of which have not been studied previously. Conductivity data are presented for eight systems: Li4GeO4-Li3(P, As, V)O4; Li4TiO4-Li3(As, V)O4; Li4GeO4-Li(Ga, Al)O2; Li4GeO4-Li2CaGeO4 and the results compared with those reported in the literature for Li4SiO4-Li3(P, As, V)O4 systems and lisicon. dc polarisation measurements were made on four of the system and it was found that the electronic transference number is 10?4 or less. The materials with the highest conductivity were found in the systems, Li4 (Ge, Ti) O4-Li3 (As, V)O4 with σ ~ (3 to 4) × 10?5 Ω?1 cm?1 at room temperature. It is noted that the systems with the highest conductivity are generally those with the largest unit cell volume. 相似文献