Synthesis and crystal structure of SnSbBiS4

The quaternary compound SnSbBiS₄ formed in the SnSb₂S₄-SnBi₂S₄ system at the ratio SnSb₂S₄: SnBi₂S₄ = 1: 1 was studied for the first time by various physicochemical methods over a wide temperature interval. Single crystals of SnSbBiS₄ were prepared by chemical transport. The unit cell parameters of SnSbBiS₄, which crystallized in the hexagonal system (a = 15.52 ?, c = 3.81 ?), were determined.     

Tl2S-Sb2S3-Bi2S3 quasi-ternary system

The Tl₂S-Sb₂S₃-Bi₂S₃ quasi-ternary system (system A) was studied using DTA, X- ray powder diffraction, microstructure examination, and microhardness measurements. TlSbS₂-Tl₄Bi₂S₅(TlBiS₂, Bi₂S₃), Sb₂S₃-TlBiS₂, Tl₃SbS₃-TlBiS₂(Bi₂S₃), and [TlSb_0.5Bi_0.5S₂]-Tl₂S isopleths; isothermal sections at 500 K; and liquidus surface projection of system A were constructed. Characteristic features of the title system are extensive fields of solid solutions extended along the TlSbS₂-TlBiS₂ quasi-binary section and a continuous solubility belt 1–2 mol % wide extended along the Sb₂S₃-Bi₂S₃ binary subsystem. Primary separation fields of phases and the types and coordinates of invariant and monovariant equilibria in system A were determined.     

Phase diagrams of sections in the EuS-Cu2S-Nd2S3 system

Phase equilibria in the EuS-Cu₂S-Nd₂S₃ system were studied in an isothermal (970 K) section and NdCuS₂-EuS and Cu₂S-EuNdCuS₃ polythermal sections. The complex sulfide EuNdCuS₃ has an orthorhombic crystal lattice (space group Pnma; a = 1.10438(2) nm, b = 0.40660(1) nm, c = 1.14149(4) nm), is isostructural to BaLaCuS₃, and melts incongruently at 1470 K: EuNdCuS₃ (0.50 EuS; 0.50 NdCuS₂) ai 0.18 EuS ss (0.88 EuS; 0.12 NdCuS₂) + 0.82 L (0.415 EuS; 0.585 NdCuS₂); ΔH = 17.8 kJ/mol. Within the range 0.5 mol % EuS, EuNdCuS₃-based solid solutions were not found. At 970 K, the tie lines pass from the compound EuNdCuS₃ to Cu₂S, EuS, NdCuS₂, and EuNd₂S₄ phases and lie between the NdCuS₂ phase and solid solutions (ss) of γ-Nd₂S₃ with EuNd₂S₄. Eutectics are formed between the compounds NdCuS₂ and EuNdCuS₃ at 32.0 mol % EuS T = 1318 K and between the compounds Cu₂S and EuNdCuS₃ at 20.5 mol % EuNdCuS₃ and T = 1142 K. Five main subordinate triangles were identified in the system.     

Vaporization chemistry and thermodynamics in the CdGa2S4-Ga2S3 system

The chemistry and thermodynamics of vaporization of CdGa₂S₄(s), CdGa₈S₁₃(s), and Ga₂S₃(s) were studied by computer-automated, simultaneous Knudsen-effusion and torsion-effusion, vapor pressure measurements in the temperature range 967–1280 K. The vaporization was incongruent with loss of Cd(g) + 1/2 S₂(g) and production of CdGa₈S₁₃(s), a previously unknown compound, in equilibrium with CdGa₂S₄(s), until the solid became CdGa₈S₁₃ only. Then, incongruent vaporization continued with production of Ga₂S₃(s) until the solid was Ga₂S₃ only. The latter vaporized congruently. The ΔH°(298 K) of combination of one mole of CdS(s) with one mole of Ga₂S₃(s) to give CdGa₂S₄(s) was ?22.6 ± 0.9 kJ mole^?1. The 2H2(298 K) of combination of one mole of CdS(s) with four moles of Ga₂S₃(s) to give CdGa₈S₁₃(s) was ?25.5 ± 1.1 kJ mole^?1. The 2H2(298K) of CdGa₈S₁₃(s) with respect to disproportionation into CdGa₂S₄(s) and 3 Ga₂S₃(s) was ?2.8 ± 0.6 kJ mole^?1. CdGa₈S₁₃(s) was not observed at room temperature. The 2H2(298 K) of vaporization of the residual Ga₂S₃(s) was 663.4 ± 0.8 kJ mole^?1, which compared well with a value of 661.4 ± 0.3 kJ mole^?1 already available from the literature. Implications of small variations in stoichiometry of compounds in this study were observed and are discussed.     

Phase equilibria in the SrS-Ga2S3 system

In the SrS-Ga₂S₃ system, there exist two individual compounds: SrGa₂S₄ (a = 2.084 nm, b = 2.050 nm, c = 1.220 nm; congruent melting at 1530 K) and Sr₂Ga₂S₅ (a = 1.253 nm, b = 1.203 nm, c = 1.117 nm; peritectic melting at 1330 K); both are orthorhombic. We discovered a compound of composition Sr₄Ga₂S₇; this compound crystallizes in cubic system with the unit cell parameter a = 0.6008 nm, space group Pa3, and decomposes by a solid-phase reaction at 870 K. Eutectic compositions are 42 and 73 mol % Ga₂S₃; eutectic melting temperatures are 1210 and 1170 K, respectively. The SrS solubility in γ-Ga₂S₃ at 1070 K reaches 4 mol %.     

Interactions of Cr2S3 with GeS2 and Cu2GeS3

The interactions in the GeS₂-Cr₂S₃ and Cu₂GeS₃-Cr₂S₃ sections were studied by differential thermal analysis and X-ray powder diffraction. The GeS₂-Cr₂S₃ section was shown to be quasi-binary, with a degenerate eutectic; no ternary compound was formed. In the Cu₂GeS₃-Cr₂S₃ section, a quaternary phase of variable composition having a homogeneity range of 69–75 mol % Cr₂S₃ crystallized in the cubic system. The samples of this composition are spin glasses with freezing temperatures of 20–25 K.     

Phase equilibrium in the PbSnS2-PbSb2S4 system

The PbSnS₂-PbSb₂S₄ system was studied by physicochemical methods, and its phase diagram was plotted. The system is quasi-binary; solid solutions regions based on PbSnS₂ (6 mol % PbSb₂S₄) and PbSb₂S₄ (12 mol % PbSnS₂) were revealed. At a component ratio of 1: 1, a congruently melting compound Pb₂SnSb₂S₆ is formed. Pb₂SnSb₂S₆ single crystals were obtained by chemical transport. The unit cell parameters of Pb₂SnSb₂S₆, which crystallizes in orthorhombic system, were determined: a = 15.22 ?, b = 10.68 ?, c = 3.90 ?.     

Crystal structures of CsFe2S3 and RbFe2S3: synthetic analogs of rasvumite KFe2S3

The isostructural alkali thioferrate compounds CsFe₂S₃, RbFe₂S₃ and KFe₂S₃ have been synthesized by reacting Fe and S with their corresponding AFeS₂ (A=K, Rb, Cs) precursors. The crystal structures of these and binary compounds of intermediate composition were determined by Rietveld analysis of laboratory powder X-ray diffraction patterns. All of the synthesized compounds adopt the space group Cmcm (#63), Z=4 with: a=9.5193(8) Å, b=11.5826(10) Å, c=5.4820(4) Å for CsFe₂S₃; a=9.2202(7) Å, b=11.2429(9) Å, c=5.4450(3) Å for RbFe₂S₃; and a=9.0415(13) Å, b=11.0298(17) Å, c=5.4177(6) Å for KFe₂S₃. These mixed valence alkali thioferrates show regular changes in cell dimensions, AS₁₀ (A=K, Rb, Cs) polyhedron volumes, polyhedron distortion parameters, and calculated oxidation state of Fe with respect to increasing size of the alkali element cation. The calculated empirical oxidation state of iron varies from +2.618 (CsFe₂S₃), through +2.666 (RbFe₂S₃) to +2.77 (KFe₂S₃).     

Preparation and photocatalytic activity of Sb2S3/Bi2S3 doped TiO2 from complex precursor via gel-hydrothermal treatment

Sb₂S₃/Bi₂S₃ doped TiO₂ were prepared with the coordination compounds [M(S₂CNEt)₃] (M=Sb, Bi; S₂CNEt=pyrrolidinedithiocarbamate) as precursors via gel-hydrothermal techniques. The doped TiO₂ were characterized by XRD, SEM, XPS and UV-vis diffuse reflectance means. The photocatalyst based on doped TiO₂ for photodecolorization of 4-nitrophenol (4-NP) was examined. The optimal Bi₂S₃/Sb₂S₃ content, pH and different doped techniques have been investigated. Photocatalytic tests reveal that M₂S₃ doped TiO₂ via the gel-hydrothermal route performs better photocatalytic activity for photodegradation reaction of 4-nitrophenol (4-NP).     

Uranium's Valency in U3S5

U₃S₅ has been prepared by chemical transport reaction and investigated using X-ray powder diffraction, FTIR spectroscopy, electrical resistivity measurements, and X-ray photoelectron spectroscopy. U₃S₅ is a semiconductor with a thermal band gap E_g=78.1(4) meV (298 K<T<50 K), which closes gradually to 3.4(4) meV for T<25 K. Photoelectron spectroscopy on single crystals of U₃S₅ and β-US₂ suggest a mixed valency of uranium in U₃S₅. Physical and structural data are consistent with a mixed-valent model (U³⁺)₂U⁴⁺ (S²⁻)₅. A brief survey of literature data on crystal structure and physical properties of uranium sulfides and selenides is given.     

Phase diagram of the Pb5Sb4S11-Pb2SnSb2S6 system

The Pb₅Sb₄S₁₁-Pb₂SnSb₂S₆ system was studied by a number of physicochemical methods, and its phase diagram was constructed. It was found that the system under investigation is a quasi-binary eutectic type section of the SnS-PbS-Sb₂S₃ ternary system. The coordinates of the eutectic are found to be 33 mol % Pb₅Sb₄S₁₁ and 750 K. Regions of solid solutions based on Pb₅Sb₄S₁₁ (6 mol % Pb₂SnSb₂S₆) and Pb₂SnSb₂S₆ (4 mol % Pb₅Sb₄S₁₁) were determined.     

Phase relationships in the systems MSCr2S3In2S3 (M = Co,Cd, Hg)

The phase diagrams of the quaternary systems MSCr₂S₃In₂S₃, with M = Co, Cd, and Hg, were studied with the help of X-ray powder photographs of quenched samples, high-temperature X-ray diffraction patterns, DTA and TG measurements, and far-infrared spectra. Because indium sulfides do react with silica tubes, alumina crucibles must be used for annealing the samples. Complete series of mixed crystals are formed among the spinel-type compounds MCr₂S₄, MIn₂S₄ (M = Cd, Hg), and In₂S₃. HgIn₂S₄ is decomposed at temperatures above 300°C. In the sections CoCr₂S₄CoIn₂S₄ and CoCr₂S₄In₂S₃ relatively large miscibility gaps exist due to the change from normal to inverse spinel structure. But the interchangeability of both systems increases with increasing temperature, and at temperatures above 1000°C, complete series of solid solutions are formed, which can be quenched to ambient temperature. Superstructure ordering like that of ordered α-In₂S₃ has been found in the In-rich region of the MIn₂S₄In₂S₃ solid solutions. The unit cell dimensions of all stoichiometric and phase boundary compounds, e.g., Cd_1.15In_1.9S₄, including the chromium spinels MCr₂S₄ (M = Mn, Zn) and ZnCr₂Se₄, are given and discussed in terms of possible deviations from stoichiometry.     

Crystal structures of V3S4 and V5S8

Crystal structures of the ordered phases of V₃S₄ and V₅S₈ were refined with single crystal data. Both are monoclinic. Chemical compositions, space groups and lattice constants are as follows: VS_1.47, $\text{I2}\text{m}$ (No. 12), a = 5.831(1), b = 3.267(1), c = 11.317(2)Å, β = 91.78(1)° and VS_1.64, $\text{F}\text{2}\text{m}$ (No. 12), a = 11.396(11), b = 6.645(7), c = 11.293(4), Å, β = 91.45(6)°. In both structures, short metal-metal bonds were found between the layers as well as within them. In comparison with the structure of Fe₇S₈, the stability of NiAs-type structure was discussed based on the detailed metal-sulfur distances.     

Phase equilibria and glass formation in the As2S3-TlAs2S2Se2 section of the As2S3-As2Se3-TlS system

Alloys in the As₂S₃-TlAs₂S₂Se₂ section of the As₂S₃-As₂Se₃-TlS ternary system were studied and a phase diagram was constructed using physicochemical methods (differential thermal analysis, microstructural analysis, X-ray powder diffraction, also microhardness and density measurements). The diagram in the As₂S₃-TlAs₂S₂Se₂ section is a non-quasi-binary diagonal section of the As₂S₃-As₂Se₃-TlSe quasi-ternary system. It was found that all the alloys in the section under ordinary conditions are obtained in the vitreous state. At low As₂S₃ concentrations in the section, solid solutions form up to 2.5 mol %, and at low TlAs₂S₂Se₂ concentrations, their extent is 3 mol %.     

Bi2S3量子点敏化TiO2纳米阵列结构的制备及光电性能

利用水热法制备一维TiO₂纳米棒阵列,并采用化学浴沉积法(CBD)结合自组装技术在TiO₂纳米棒上敏化Bi₂S₃量子点,形成TiO₂/Bi₂S₃复合纳米棒阵列。系统研究了复合结构的表面形貌、晶体结构、光学及光电性能。结果表明:在修饰有三氨丙基三乙氧基硅烷自组装单分子膜(APTS-SAMs)的TiO₂纳米棒表面形成一层致密的Bi₂S₃量子点敏化层,这一技术的关键是含-NH₂末端的APTS-SAMs可有效促进Bi₂S₃的异相成核作用;Bi₂S₃的沉积时间对复合结构的光吸收及光电响应性能有决定性的影响,薄膜的光电流随着沉积时间呈先增加后减小的趋势,在沉积时间为20min时,光电流密度最大。这是因为随着沉积时间的增加,TiO₂纳米棒表面Bi₂S₃量子点密度增大,光吸收增加;而当沉积时间进一步延长时,Bi₂S₃在TiO₂纳米棒表面的大量负载而形成堆积和团聚,导致表面缺陷增多,光生电子复合几率增大,从而使光电流密度减小。     

Electrical conductivity of Th3P4-type EnLn2S4

Electrical conductivity measurements of Th₃P₄-type EuLn₂S₄ (Ln = LaGd) compounds have been made as functions of temperature and sulfur vapor pressure. These compounds are all p-type semiconductors, and their conductivities at room temperature have almost the same values for the specimens from EuLa₂S₄ to EuNd₂S₄ but increase on going from EnNd₂S₄ to EuGd₂S₄. In addition, the conductivity of EuGd₂S₄ is sensitive to sulfur vapor pressure and obeys the relationship . The mechanism of electrical transport in these compounds is discussed.     

Bi2S3量子点敏化TiO2纳米阵列结构的制备及光电性能研究

利用水热法制备一维TiO₂纳米棒阵列,并采用化学浴沉积法(CBD)结合自组装技术在TiO₂纳米棒上敏化Bi₂S₃量子点,形成TiO₂/Bi₂S₃复合纳米棒阵列.系统研究了复合结构的表面形貌、晶体结构、光学及光电性能.结果表明:在修饰有三氨丙基三乙氧基硅烷自组装单分子膜(APTS-SAMs)的TiO₂纳米棒表面形成一层致密的Bi₂S₃量子点敏化层,这一技术的关键是含-NH₂末端的APTS-SAMs可有效促进Bi₂S₃的异相成核作用;Bi₂S₃的沉积时间对复合结构的光吸收及光电响应性能有决定性的影响,薄膜的光电流随着沉积时间呈先增加后减小的趋势,在沉积时间为20 min时,光电流密度最大.这是因为随着沉积时间的增加,TiO₂纳米棒表面Bi₂S₃量子点密度增大,光吸收增加;而当沉积时间进一步延长时,Bi₂S₃在TiO₂纳米棒表面的大量负载而形成堆积和团聚,导致表面缺陷增多,光生电子复合几率增大,从而使光电流密度减小.     

Mo¨ssbauer studies of thiospinels. IV. The system FeCr2S4-Fe3S4

Spinel compounds of the composition Fe_1+xCr_2?xS₄, with 0 ≦ x ≦ 0.5, have been prepared in polycrystalline form. The ionic distribution Fe²⁺[Cr³⁺_2?xFe³⁺_x]S^2?₄ is derived from both X-ray and ⁵⁷Fe Mo¨ssbauer data. Room temperature Mo¨ssbauer spectra show the typical behavior of tetrahedral-site Fe²⁺ surrounded by different octahedral-site neighbors. Octahedral-site Fe³⁺ absorbs as a doublet with Δ ≈ 0.5 mm/s. Samples of overall composition FeCr₂S₄ consist mainly of a spinel Fe²⁺[Cr³⁺_2?yFe³⁺_y]S^2?₄, y ≈ 0.02.     

Synthesis and Structure of the Supramolecular Adduct Formed by the [Mo3S4(H2O)7Cl22+ Cluster Complex with Cucurbituril: {[Mo3S4(H2O)7Cl2](C36H36N24O12)} Cl2·10H2O

Slow crystallization of an HCl solution containing cucurbituril (C₃₆H₃₆N₂₄O₁₂) and a triangular molybdenum cluster aqua complex [Mo₃S₄(aq)]⁴⁺ yielded a supramolecular adduct of { [Mo₃S₄(H₂O)₇Cl₂]×(C₃₆H₃₆N₂₄O₁₂₎Cl₂·10H₂O composition. The molecular and crystal structure of the adduct were established by single crystal X-ray diffraction. Monoclinic crystal system, space group P2₁/c, a = 21.4762(2) Å, b = 14.6853(1) Å, c = 24.6480(3) Å; β = 112.8366(5)°, V _cell = 7164.26(12) ų, Z = 4, ρ_calc = 1.725 g/cm³.Original Russian Text Copyright © 2004 by E. V. Chubarova, D. G. Samsonenko, J. H. Platas, M. N. Sokolov, and V. P. Fedin__________Translated from Zhurnal Strukturnoi Khimii, Vol. 45, No. 5, pp. 950–954, September–October, 2004.     

A CNDO/2 approach to electron delocalization in N4S4 and N4S4F4

The electronic structure of N₄S₄ and N₄S₄F₄ molecules is investigated within the framework of the CNDO/2 approximation. A pure alternated system is obtained for the fluorinated compound with respect to the Wiberg bond populations. On the other hand, the N₄S₄ molecule appears to be composed of three highly delocalized “islands”, as defined by Dewar in the case of cyclophosphazenes. The “tub form” of N₄S₄ is due to a strong spatial interaction between non-bonded sulphur atoms and, for this reason, the N₄S₄ molecule may be called the “inorganic cyclooctatetraene”.