Microstructure and magnetic properties of nanocomposite FePt/MgO and FePt/Ag films

An in-plane magnetic anisotropy of FePt film is obtained in the MgO 5 nm/FePt t nm/MgO 5 nm films (where t=5, 10 and 20 nm). Both the in-plane coercivity (H_c∥) and the perpendicular magnetic anisotropy of FePt films are increased when introducing an Ag-capped layer instead of MgO-capped layer. An in-plane coercivity is 3154 Oe for the MgO 5 nm/FePt 10 nm/MgO 5 nm film, and it can be increased to 4846 Oe as a 5 nm Ag-capped layer instead of MgO-capped layer. The transmission electron microscopy (TEM)-energy disperse spectrum (EDS) analysis shows that the Ag mainly distributed at the grain boundary of FePt, that leads the increase of the grain boundary energy, which will enhance coercivity and perpendicular magnetic anisotropy of FePt film.     

High-frequency characteristics of CoFeVAlONb thin films

High-frequency characteristics of CoFeVAlONb thin films were studied. A thin film of Co_43.47Fe_35.30V_1.54Al_5.55O_9.93Nb_4.21 is observed to exhibit excellent magnetic properties; magnetic coercivity of 1.24 Oe, uniaxial in-plane anisotropy field of 66.99 Oe, and saturation magnetization of 19.8 kG. The effective permeability of the film is as high as 1089 and is stable up to 1.8 GHz, and with ferromagnetic resonance over 3 GHz. This film also has very high electrical resistivity of about 628 μΩ cm. These superior properties make it ideal for high-frequency magnetic applications.     

Magnetic anisotropy properties of CoZrNb thin films deposited on PET substrate by magnetron sputtering

Soft magnetism and magnetic anisotropy properties of CoZrNb thin films deposited on polyethylene terephthalate (PET) substrate by magnetron sputtering were investigated. As the film thickness increases, the coercivity of films decreases from 7 to 4 Oe. It exhibits an in-plane uniaxial magnetic anisotropy as the thickness of CoZrNb thin films increases. An easy axis is observed in CoZrNb films along the direction transverse to the rolling direction of the polymer web.     

Enhancement of L10 ordered FePt by Pt buffer layer

L₁₀-ordered FePt thin films prepared by molecular-beam epitaxy on MgO (0 0 1) substrate at 320 °C with different thickness of Pt buffer layer have been investigated. The out-of-plane coercivity increases with increasing thickness of Pt buffer. The maximum values of the long-range order parameter and uniaxial magnetic anisotropy energy are 0.72 and 1.78×10⁷ erg/cm³, respectively, for films with 12 nm thick Pt buffer layer, where the c/a ratio (0.976) shows the minimum value. The reason for the enhancement in ordering is due to the proper lattice strains Pt buffer bestows on FePt layer, these strains are equal to the contraction in lattice parameter c and the expansion in a. Studies of angular-dependent coercivity revealed that the magnetization reversal behaviour shifts from a domain-wall motion dominated case towards a near rotational mode with increasing thickness of Pt buffer layer.     

Effect of Co underlayer on soft magnetic properties and microstructure of FeCo thin films

High saturation magnetization soft magnetic FeCo (=Fe₆₅Co₃₅) films were prepared using a thin Co underlayer. The FeCo/Co films exhibited a well-defined in-plane uniaxial anisotropy with easy axis coercivity (H_ce) of 10 Oe and hard axis coercivity (H_ch) of 3 Oe, and a half reduction of H_c with H_ce=4.8 Oe and H_ch=1.0 Oe was obtained when the composition was adjusted to 25 at% Co. The effective permeability of the films remains flat around 250 to 800 MHz. The saturation magnetostriction was 5.2×10⁻⁵ and the intrinsic stress was 0.8 GPa in FeCo single layer, both were slightly reduced by Co underlayer. The Co underlayer changed the preferred orientation of the FeCo films from (2 0 0) to (1 1 0) but more significantly, reduced the average grain size from ∼74 to ∼8.2 nm. It also reduced the surface roughness from 2.351 to 0.751 nm. The initial stage and interface diffusion properties were examined by TEM and XPS.     

Exchange bias and negative magnetoresistance in [Co/Bi/Co]/IrMn thin films]

The artificial control of grain-boundary resistance and its contribution to magnetic and magneto-transport properties in [Co(3 nm)/Bi(2.5 nm)/Co(3 nm)]Ir₂₀Mn₈₀(12 nm) thin films that exhibit exchange bias is studied. Transverse magnetoresistance (MR) loops exhibit a negative MR in thin films grown by magnetron sputtering on Si/SiN_x(100 nm) substrates. This negative MR effect is of the giant-MR (GMR) type, although its magnitude is less than 1%. A considerable exchange bias (EB) effect is observed only at lower temperatures, where both, GMR and isothermal magnetization loops exhibit a shift of −600 Oe at 5 K.     

Effect of oxygen pressure on microstructure and magnetic properties of strontium hexaferrite (SrFe12O19) film prepared by pulsed laser deposition

The effects of oxygen pressure during deposition on microstructure and magnetic properties of strontium hexaferrite (SrFe₁₂O₁₉) films grown on Si (100) substrate with Pt (111) underlayer by pulsed laser deposition have been investigated. X-ray diffraction pattern confirms that the films have c-axis perpendicular orientation. The c-axis dispersion (Δθ₅₀) increases and c-axis lattice parameter decreases with increasing oxygen pressure. The films have hexagonal shape grains with diameter of 150-250 nm as determined by atomic force microscopy. The coercivities in perpendicular direction are higher than those in in-plane direction, which shows the films have perpendicular magnetic anisotropy. The saturation magnetization and anisotropy field for the film deposited in oxygen pressure of 0.13 mbar are comparable to those of the bulk strontium hexaferrite. Higher oxygen pressure leads to the films having higher coercivity and squareness. The coercivity in perpendicular and in-plane directions of the film deposited in oxygen pressure of 0.13 mbar are 2520 Oe and 870 Oe, respectively.     

Soft magnetic properties of FeCo films with Co underlayer

Bilayered Fe₆₅Co₃₅ (=FeCo)/Co films were prepared by facing targets sputtering with 4πM_s∼24 kg. The soft magnetic properties of FeCo films were induced by a Co underlayer. H_c decreased rapidly when the Co underlayer was 2 nm or more. The films showed well-defined in-plane uniaxial anisotropy with the typical values of H_ce=10 Oe and H_ch=3 Oe, respectively. High frequency characteristics of the films show the films can work at 0.8 GHz with real permeability as high as 250.     

Effect of film morphology on the magnetic properties for Nd-Fe-B thin films

The microstructure and magnetic properties of Nd-Fe-B thin films with a particulate structure were investigated. The nominal thickness of the Nd-Fe-B layer (t_N) was varied from 2 to 50 nm on a (0 0 1) Mo buffer layer. The films were grown with their c-axis perpendicular to the plane, and the morphology of the film with t_N=2 nm was shown to be particulate from an atomic force microscope image. The slope of the initial magnetization curve became steeper by increasing the t_N value in the initial magnetization curve, indicating that the film morphology composed of single domain particles changed to that of multi-domain particles with growth. The film with t_N=8 nm, which had a structure consisting of a mixture of single and multiple domain particles, showed the maximum value of the coercivity measured in the direction perpendicular to the film plane (H_c) as 19.5 kOe.     

Structural and optical properties of a-Si1−xCx:H films synthesized by dc magnetron sputtering technique

Hydrogenated amorphous SiC films (a-Si_1−xC_x:H) were prepared by dc magnetron sputtering technique on p-type Si(1 0 0) and corning 9075 substrates at low temperature, by using 32 sprigs of silicon carbide (6H-SiC). The deposited a-Si_1−xC_x:H film was realized under a mixture of argon and hydrogen gases. The a-Si_1−xC_x:H films have been investigated by scanning electronic microscopy equipped with an EDS system (SEM-EDS), X-ray diffraction (XRD), secondary ions mass spectrometry (SIMS), Fourier transform infrared spectroscopy (FTIR), UV-vis-IR spectrophotometry, and photoluminescence (PL). XRD results showed that the deposited film was amorphous with a structure as a-Si_0.80C_0.20:H corresponding to 20 at.% carbon. The photoluminescence response of the samples was observed in the visible range at room temperature with two peaks centred at 463 nm (2.68 eV) and 542 nm (2.29 eV). In addition, the dependence of photoluminescence behaviour on film thickness for a certain carbon composition in hydrogenated amorphous SiC films (a-Si_1−xC_x:H) has been investigated.     

Magnetic,structural and electrical properties of ordered and disordered Co50Fe50 films

Co₅₀Fe₅₀ films with thickness varying from 100 to 500 Å were deposited on a glass substrate by sputtering process, respectively. Two kinds of CoFe films were studied: one was the as-deposited film, and the other the annealed film. The annealing procedure was to keep the films at 400 °C for 5 h in a vacuum of 5×10⁻⁶ mbar. From the X-ray study, we find that the as-deposited film prefers the CoFe(1 1 0) orientation. Moreover, the body-centered cubic (bcc) CoFe(1 1 0) line is split into two peaks: one corresponding to the ordered body-centered tetragonal (bct) phase, and the other, the disordered bcc phase. After annealing, the peak intensity of the ordered bct phase becomes much stronger, while that of the disordered bcc phase disappears. The annealing has also caused the ordered CoFe(2 0 0) line to appear. When the amount of the ordered bct phase in Co₅₀Fe₅₀ is increased, the saturation magnetization (M_s) and coercivity (H_c) become larger, but the electrical resistivity (ρ) decreases. From the temperature coefficient of resistance (TCR) measurement, we learn that the bct grains in the CoFe film start to grow at temperature 82 °C.     

Amorphous film thickness dependence for epitaxy of perovskite oxide films under excimer laser irradiation

We have studied the epitaxial growth of perovskite manganite LaMnO₃ (LMO) on SrTiO₃(1 0 0) in the excimer laser assisted metal organic deposition process. The LMO was preferentially grown from the substrate surface by the KrF laser irradiation. The study of amorphous LMO film thickness dependence on epitaxial growth under the excimer laser irradiation revealed that the photo-thermal heating effect strongly depended on the amorphous film thickness due to a low thermal conductivity of amorphous LMO: the ion-migration for chemical bond-forming at the reaction interface would be strongly enhanced in the amorphous LMO film with the large film thickness about 210 nm. On the other hand, the photo-chemical effect occurred efficiently for the amorphous film thickness in the range of 35-210 nm. These results indicate that the epitaxial growing rate was dominated by the photo-thermal heating after the photo-chemical activation at the growth interface.     

Magnetic properties of CoPt–SiNx/Ag nanocomposite films

When the thickness of Ag under layer is 25 nm, the CoPt/Ag film has maximum out-of-plane squareness (S_⊥), minimum in-plane squareness (S_∥), and the largest out-of-plane coercivity (H_c⊥), they are 0.95, 0.35, and 15 kOe, respectively. Different volume percent of SiN_x ceramic materials were co-sputtered with Co₅₀Pt₅₀ films on the Ag under layer to reduce the grain size of the CoPt film. Comparing the X-ray diffraction pattern of CoPt-SiN_x/Ag films without annealing with that of the films which annealed at 600 and 700 °C, it is found that the intensities of CoPt (0 0 1) and CoPt (0 0 2) superlattice lines were reduced after annealing. As the SiN_x content is raised to 50 vol%, the particle size of CoPt is reduced to be about 9 nm.     

Structure, magnetic and electrical transport properties of cosputtered Fe0.5Ge0.5 nanocomposite films

Fe_0.5Ge_0.5 nanocomposite films with different film thicknesses were fabricated using cosputtering. The films are composed of Ge, Fe and Fe₃Ge₂, and are ferromagnetic at room temperature. The saturation magnetization and magnetic interaction including dipolar interaction and exchange coupling increase with the increasing film thickness. The electrical conductance mechanism turns from metallic to semiconducting and the saturation Hall resistivity ρ_xys increases with the decreasing film thickness. At 28 nm, ρ_xys is ∼137 μΩ cm at 2 K, about 150 times larger than that of pure Fe film (0.9 μΩ cm) and four orders larger than that of bulk Fe. The ρ_xy-H curves of all the films show the same linearity character in low-field range even though the temperature-independent slope is different at different film thicknesses. At high temperatures, the skew scattering mechanism is dominant. At low temperatures, side-jump effect should be dominant at large resistivity ρ_xx regime for the thin films, and the skew scattering is dominant at small ρ_xx regime for the thick films.     

Magnetization reversal dynamics in Au/Co/Au(111) ultrathin films: Effect of roughness of the buffer layer

We present a study of the magnetization reversal dynamics in ultrathin Au/Co/Au films with perpendicular magnetic anisotropy, for a Co thickness of 0.5, 0.7 and 1 nm. In these films, the magnetization reversal is dominated by domain nucleation for t_Co=0.5, 0.7 nm and by domain wall propagation for t_Co=1 nm. The prevalence of domain nucleation for the thickness range 0.5-0.7 nm is different from results reported in the literature, for the same system and for the same thickness range, where the magnetization reversal took place mainly by domain wall motion. We attribute this difference to the effect of roughness of the Au buffer layer on the morphology of the magnetic layer.     

Structural and magnetic properties of evaporated Fe thin films on Si(1 1 1), Si(1 0 0) and glass substrates

We present experimental results on the structural and magnetic properties of series of Fe thin films evaporated onto Si(1 1 1), Si(1 0 0) and glass substrates. The Fe thickness, t, ranges from 6 to110 nm. X-ray diffraction (XRD) and atomic force microscopy (AFM) have been used to study the structure and surface morphology of these films. The magnetic properties were investigated by means of the Brillouin light scattering (BLS) and magnetic force microscopy (MFM) techniques. The Fe films grow with (1 1 0) texture; as t increases, this (1 1 0) texture becomes weaker for Fe/Si, while for Fe/glass, the texture changes from (1 1 0) to (2 1 1). Grains are larger in Fe/Si than in Fe/glass. The effective magnetization, 4πM_eff, inferred from BLS was found to be lower than the 4πM_S bulk value. Stress induced anisotropy might be in part responsible for this difference. MFM images reveal stripe domain structure for the 110 nm thick Fe/Si(1 0 0) only.     

Effect of thickness on the structure, morphology and optical properties of sputter deposited Nb2O5 films

Nb₂O₅ films with the thickness (d) ranging from 55 to 2900 nm were deposited on BK-7 substrates at room temperature by a low frequency reactive magnetron sputtering system. The structure, morphology and optical properties of the films were investigated by X-ray diffraction, atomic force microscopy and spectrophotometer, respectively. The experimental results indicated that the thickness affects drastically the structure, morphology and optical properties of the film. There exists a critical thickness of the film, d_cri =2010 nm. The structure of the film remains amorphous as d < d_cri. However, it becomes crystallized as d > d_cri. The root mean square of surface roughness increases with increasing thickness as d > 1080 nm. Widths and depths of the holes on film surface increase monotonously with increasing thickness, and widths of the holes are larger than 1000 nm for the crystalline films. Refractive index increases with increasing thickness as d < d_cri, while it decreases with increasing thickness as d > d_cri. In addition, the extinction coefficient increases with increasing thickness as d > d_cri.     

Formation of silicon nanodots from dysprosium-doped amorphous SiCxOy films grown by hot-filament assisted chemical vapor deposition of CH3SiH3 and Dy(DPM)3 gas jets

We report on Si nanodot formation by chemical vapor deposition (CVD) of ultrathin films and following oxidation. The film growth was carried out by hot-filament assisted CVD of CH₃SiH₃ and Dy(DPM)₃ gas jets at the substrate temperature of 600 °C. The transmission electron microscopy observation and X-ray photoelectron spectroscopy analysis indicated that ∼35 nm Dy-doped amorphous silicon oxycarbide (SiC_xO_y) films were grown on Si(1 0 0). The Dy concentration was 10-20% throughout the film. By further oxidation at 860 °C, the smooth amorphous film was changed to a rough structure composed of crystalline Si nanodots surrounded by heavily Dy-doped SiO₂.     

Magnetic layer thickness dependence of magnetization reversal in electrodeposited CoNi/Cu multilayer nanowires

The magnetization reversal of electrodeposited CoNi/Cu multilayer nanowires patterned in an array using a hole template has been investigated. The reversal mode is found to depend on the CoNi layer thickness t(CoNi); with increasing t(CoNi) a transition occurs from coherent rotation to a combination of coherent and incoherent rotation at around t(CoNi)=51 nm. The reversal mode has been identified using the magnetic hysteresis loops measured at room temperature for CoNi/Cu nanowires placed at various angles between the directions of the nanowire axis and external fields using a vibrating sample magnetometer. The nanowire samples have a diameter of ∼250 nm and constant Cu layer thickness of 4.2 nm with various t(CoNi) ranging from 6.8 nm to 7.5 μm. With increasing t(CoNi), the magnetic easy axis moves from the direction perpendicular to nanowires to that parallel to the nanowires at around t(CoNi)=51 nm, indicating a change in the magnetization reversal mode. The reversal mode for the nanowires with thin disk-shaped CoNi layers (t(CoNi)=6.8, 12 and 17 nm) is of a coherent rotation type, while that for long rod-shaped CoNi layers (t(CoNi)=150 nm, 1.0, 2.5 and 7.5 μm) can be consistently explained by a combination of coherent rotation and a curling mode. The effects of dipole–dipole interactions between nanowires and between adjacent magnetic layers in each nanowire on the reversal process have been discussed.     

Low-temperature ordering of L10 FePt phase in FePt thin film with AgCu underlayer

FePt (20 nm) films with AgCu (20 nm) underlayer were prepared on thermally oxidized Si (0 0 1) substrates at room temperature by using dc magnetron sputtering, and the films annealed at different temperature to examine the disorder–order transformation of the FePt films. It is found that the ordered L1₀ FePt phase can form at low annealing temperature. Even after annealing at 300 °C, the in-plane coercivity of 5.2 kOe can be obtained in the film. With increase in annealing temperature, both the ordering degree and coercivity of the films increase. The low-temperature ordering of the films may result from the dynamic stress produced by phase separation in AgCu underlayer and Cu diffusion into FePt phase during annealing.