Room temperature diode-pumped 1875.1 nm Tm:GdVO<Subscript>4</Subscript> laser

A diode end-pumped single-frequency Tm:GdVO₄ laser at room temperature was reported. The maximal output power of single-frequency is as high as 66 mW by using two uncoated fused etalons, which are respectively 0.05 mm thick YAG and 1 mm thick quartz. We obtained the single frequency Tm:GdVO₄ laser at 1875.1 nm. The slope efficiency is 1.5%. The change of the lasing wavelength on temperature was also measured. The single-longitudinal-mode (SLM) laser can be used as a seed laser for coherent wind measurements and differential absorption LIDAR systems.     

diode-pumped single-frequency Tm:GdVO<Subscript>4</Subscript> laser at 1897.6 nm

A diode end-pumped Tm:GdVO₄ laser at room temperature is reported. The maximal output power of single-frequency is as high as 34 mW by using two uncoated fused etalons, which are respectively 0.05 mm thick YAG and 1mm thick quartz. We obtained the single frequency Tm:GdVO₄ laser at 1897.6 nm with the slope efficiency of 1.3%. The single-longitudinal-mode (SLM) laser can be used as a seed laser for coherent wind measurements and differential absorption LIDAR systems.     

A comparative study on diode-pumped single-frequency Tm:YAG and Tm:GdVO<Subscript>4</Subscript> lasers

In this paper, we present experimental results concerning on the laser characteristics of Tm:YAG laser and Tm: GdVO₄ laser. At room temperature, the maximum output power of Tm:YAG laser and Tm:GdVO₄ laser is 210 and 145 mW, respectively. High efficiency can be achieved for both lasers at room temperature. Nevertheless, compared with Tm:GdVO₄ laser, Tm:YAG laser can operate on single frequency with high power easily. As much as 60 mW of 2013.9 nm single-longitudinal-mode (SLM) laser was achieved for Tm:YAG laser. For Tm:GdVO₄ laser 51 mW of 1919.7 nm SLM laser was achieved. The SLM Tm:YAG laser is better for using as a seed laser for coherent wind measurements and differential absorption LIDAR systems.     

A comparative study on diode-pumped continuous wave Tm:Ho:YVO<Subscript>4</Subscript> and Tm:Ho:GdVO<Subscript>4</Subscript> lasers

In this paper, we presented experimental results concerning on the laser characteristics of two microchip lasers emitting in the 2 μm range, Tm:Ho:YVO₄ microchip laser and Tm:Ho:GdVO₄ microchip laser. At a heat sink temperature of 283 K, the maximum output power of Tm:Ho:YVO₄ laser and Tm:Ho:GdVO₄ laser is 47 and 34 mW under absorbed pump power of 912 mW, respectively. High efficiency can be achieved for both lasers at room temperature. Nevertheless, compared with Tm:Ho:GdVO₄ laser, Tm:Ho:YVO₄ laser can operate on single frequency with high power easily. At the heat sink temperature of 288 K, as much as 16.5 mW of 2052.3 nm single-longitudinal-mode (SLM) laser was achieved for Tm:Ho:YVO₄ laser. Under the same condition, only 8 mW of 2048.5 nm SLM laser was achieved for Tm:Ho:GdVO₄ laser.     

Laser spectrum of a high power Tm,Ho:GdVO<Subscript>4</Subscript> laser

In this paper, we report a 18.8 W continuous wave and 18.4 W Q-switched diode-pumped cryogenic Tm(5 at %), Ho(0.5 at %):GdVO₄ laser. The pumping source of Tm, Ho:GdVO₄ laser is a fiber-coupled laser diode with fiber core diameter of 0.4 mm, supplying 42 W power at 802.5 nm. For input pump power of 41.9 W at 802.4 nm, the output power of 18.8 W in CW operation, optical-to-optical conversion efficiency of 45% at 2.05 μm and the average output power of 18.4 W in Q-switched operation, optical-to-optical conversion efficiency of 44% at 2.04 and 2.05 μm have been attained. The emission wavelengths of the Tm(5 at %), Ho(0.5 at %):GdVO₄ laser were firstly compared when it worked in CW mode and Q-switched mode.     

Single-longitudinal-mode lasing of Tm,Ho:GdVO<Subscript>4</Subscript> using a filter of Fabry-Perot etalon and volume Bragg grating

In this letter, we report a diodepumped CW Tm, Ho:GdVO₄ laser at 77 K with a volume Bragg grating (VBG) instead of the conventional mirror. Inserting a Fabry-Perot etalon into the cavity, a singlelon-gitudinal-mode of Tm, Ho:GdVO₄ laser which I s operating at 2038.387 nm with output power 64 mW is obtained. The slope efficiency of 4.68% and a narrow linewidth about 45 pm FWHM are achieved. And appropriate cavity length is about 75 ± 5 mm.     

A high power CW Ho,Tm:GdVO<Subscript>4</Subscript> laser

In this paper, we report a 22.7 W continuous wave (CW) diode-pumped cryogenic Ho( at %), Tm(3 at %):GdVO₄ laser. The pumping sources of Ho,Tm:GdVO₄ laser are two fiber-coupled laser diodes with fiber core diameter of 0.4 mm, both of them can supply 42 W power laser operating near 802 nm. For input pump power of 64.7 W at 802.5 nm, the output power of 22.7 W in CW operation, optical-to-optical conversion efficiency of 35.1% at 2.05 μm has been attained. The M ² factor was found to be 2.0 under an output power of 16.5 W.     

A single-longitudinal-mode CW 0.25 mm Tm,Ho:GdVO<Subscript>4</Subscript> Microchip Laser

A single-longitudinal-mode of 0.25 mm Tm,Ho:GdVO₄ Microchip Laser was reported. The maximal continuous wave (CW) output power was 26.4 mW and the threshold of 118 mW. The Tm,Ho:GdVO₄ Microchip Laser output wavelength was centered at 2039.7598 nm with bandwidth of about 57.1 pm. The beam quality factor was M ² ∼ 1.52 ± 0.03 measured by knife-edge method. The Longitudinal-Mode was scanned by a FPI and the transverse mode was monitored by an infrared vidicon camera.     

Research of Tm (5.5 at %), Ho (0.55 at %):GdVO<Subscript>4</Subscript> laser pumped by diode laser at 800 nm

In this paper, we report a Tm (5.5 at %), Ho (0.55 at %):GdVO₄ laser pumped by diode laser at 800 nm. To our best knowledge, it is the first time that the use of Tm (5.5 at %), Ho (0.55 at %):GdVO₄ crystal among the similar experiments. We observed the influences of LD working temperature i.e. pump wavelength to 2 μm laser conversion efficiency. In the conditions of the continuous wave and 10 kHz acousto-optic Q-switch, high efficiency output of 2.05 μm laser was obtained. With the maximum pump power of 34.6, 13.9, and 13.6 W at 2.05 μm laser output was achieved respectively. Single laser pulse width was 25.6 ns in 10 kHz acousto-optic Q-switched condition.     

Efficient blue emission of ytterbium-doped Sr<Subscript>5</Subscript>(PO<Subscript>4</Subscript>)<Subscript>3</Subscript>F under quasi-three-level intracavity pumping

We report an Yb:Sr₅(PO₄)₃F (Yb:S-FAP) laser emitting at 985 nm intracavity pumped by a 912 nm diode-pumped Nd:GdVO₄ laser. A 808 nm diode laser is used to pump the Nd:GdVO₄ crystal emitting at 912 nm, and the Yb:S-FAP laser emitting at 985 nm intracavity pumped at 912 nm. With incident pump power of 17.5 W, intracavity second harmonic generation has been demonstrated with a power of 131 mW at 492.5 nm by using a LBO nonlinear crystal.     

Thermal focal length measurement of an LD-end-pumped Tm,Ho:GdVO4 laser

The thermal focal length of a Tm,Ho:GdVO₄ crystal was measured in this paper. The pump laser was 25.73 W, and the thermal focal length was 692.6 mm; based on the thermal focal length of a Tm,Ho:GdVO₄ crystal, a single end-pump continuous wave (CW) operation of Tm,Ho:GdVO₄ laser was designed to demonstrate the effect of thermal focal length, and a 0.26-W output power was high in considering the thermal focal length than in unconsidering the thermal focal length with a 26.1-W pump power.     

Effect of resonator length on ZnGeP<Subscript>2</Subscript> doubly resonant optical parametric oscillator pumped by a Tm,Ho:GdVO<Subscript>4</Subscript> laser

The effect of resonator length on ZnGeP₂ doubly resonant optical parametric oscillator was reported in this letter. With the employment of a Tm,Ho:GdVO₄ laser as the pump source at 2.05 μm, we have found that there are obvious peaks of the output power when the resonator lengths are matched to the length of the pump source. The ZGP OPO can generate a maximum output power of 4.27 W at 3.80 μm signal and 4.45 μm idler when the resonator length matches that of the pump source.     

A High-Power,Long-Wavelength Infrared ZnGeP<Subscript>2</Subscript> Opo Pumped by a <Emphasis Type="Italic">Q</Emphasis>-Switched Tm,Ho:GdVO<Subscript>4</Subscript> Laser

We report a high-power, long-wavelength infrared ZnGeP₂ (ZGP) optical parametric oscillator (OPO) pumped by a Q-switched Tm,Ho:GdVO₄ laser. The wavelength tuning range of 7.8–9.9 μm is realized by rotating the external angle of the ZGP crystal. We obtain an output power over 30 mW across the whole wavelength range and achieve a 1.71 W output power at 8.08 μm by transmitting the OPO parameters, corresponding to an idler laser slope efficiency of 12.1%.     

High efficiency 1341 nm Nd:GdVO<Subscript>4</Subscript> laser in-band pumped at 912 nm

A high-efficiency 1341 nm Nd:GdVO₄ laser in-band pumped at 912 nm is demonstrated for the first time. Using an all-solid-state Nd:GdVO₄ laser operating at 912 nm as pump source, 542 mW output was obtained with 1.14 W absorbed pump power. The slope efficiency with respect to the absorbed pump power was 56.6%, and the fluctuation of the output power was better than 2.6% in the given 30 min. The beam quality factor M ₂ is 1.15.     

Amplification of a <Emphasis Type="Italic">Q</Emphasis>-Switched Ho:GdVO<Subscript>4</Subscript> Oscillator in Thulium-Doped Large-Mode-Area Fiber

We report a high peak power, narrow linewidth, stable pulsed Ho:GdVO₄ amplifier based on thuliumdoped fiber, which produces 6.65 W average output power at 2,048 nm and 56.8 kW peak power with 11.7 ns pulse width at 10 kHz repetition rate. We use a simple Q-switched Ho:GdVO₄ laser as a seed laser and a thulium-doped fiber pumped by a 792 nm laser diode as an amplifier. The fiber amplifier provided 6.5 dB gain to the input signal. The spectral linewidth of the Ho:GdVO₄ amplifier remains < 0.5 nm with an M² beam quality of 1.36.     

8.30 μm singly resonant ZnGeP2 optical parametric oscillators pumped by a Tm,Ho:GdVO4 laser

A single resonator 8.30 μm ZnGeP₂ (ZGP) optical parametric oscillators (OPO) was reported in the paper. The OPO was pumped by a 10.2-W Tm,Ho:GdVO₄ laser at 8 kHz in a Q-switch mode, a 170-mW idler was obtained at 8.30 μm, and the output power of the idler and signal wave was 1.0 W, corresponding to an optical-optical conversion efficiency of 10.3% and a slope efficiency of 20.9%. Tm,Ho:GdVO₄ laser was pumped by a 30-W fiber-coupled laser diode (LD) at the center wavelength of 801 nm. The output wavelength of Tm,Ho:GdVO₄ laser was at 2.05 μm, and the energy per pulse of 1.28 mJ in 18 ns was achieved at 8 kHz with the peak power of 71.1 kW.     

Performance improvement of high repetition rate electro-optical cavity-dumped Nd:GdVO<Subscript>4</Subscript> laser

We improved the electro-optical cavity-dumped Nd:GdVO₄ laser performance at high repetition rates by employing continuous-grown GdVO₄/Nd:GdVO₄ composite crystal under 879 nm diode-laser pumping. A constant 3.8 ns duration pulsed laser was obtained and the repetition rate could reach up to 100 kHz with a maximum average output power of 13.1 W and a slope efficiency of 56.4%, corresponding to a peak power of 34.4 kW.     

High-power,high-quality ZGP OPO pumped by a Tm,Ho:GdVO<Subscript>4</Subscript> laser

We report a ZGP OPO system capable of producing >6 W at a signal wavelength of 3.80 μm and an idler wavelength of 4.45 μm. The pumping source is the Tm,Ho:GdVO₄ laser operated at 2.049 μm with an M ² of 1.07. The ZGP OPO generated a total combined output power of 6.1 W at signal wavelength and idler wavelength under pumping power of 18.3 W, and an M ² of 1.7 for OPO output was obtained.     

High average power and short pulse duration continuous wave mode-locked Nd:GdVO<Subscript>4</Subscript> laser with a semiconductor absorber mirror

Passive mode locking of a solid-state Nd:GdVO₄ laser is demonstrated. The laser is mode locked by use of a semiconductor absorber mirror (SAM). A low Nd³⁺ doped Nd:GdVO₄ crystal is used to mitigate the thermal lens effect of the laser crystal at a high pump power. The maximum average output power is up to 6.5 W, and the pulse duration is as short as 6.2 ps. The optic-to-optic conversion efficiency is 32.5% and the repetition rate is about 110 MHz.     

Passively Q-switched GdVO<Subscript>4</Subscript>/Nd:GdVO<Subscript>4</Subscript> laser with Cr<Superscript>4+</Superscript>:YAG saturable absorber under direct 879 nm diode pumping to the emitting level

A passively Q-switched 1.06 μm laser with Cr⁴⁺:YAG saturable absorber by direct 879 nm diode pumping grown-together composite GdVO₄/Nd:GdVO₄ crystal to the emitting level was demonstrated in this paper. The characteristics of pulsed laser were investigated by using two kinds of Cr⁴⁺:YAG crystal with the initial transmissivity of 80 and 90%, respectively. When the T ₀ = 90% Cr⁴⁺:YAG was used, an average output power of 1.59 W was achieved at an incident pump power of 10 W. The pulse width and repetition rate were 64.5 ns and 170 kHz, respectively. The thermal lens effect of laser crystal was analyzed.