Performance evaluation of 64 × 10 Gbps and 96 × 10 Gbps DWDM system with hybrid optical amplifier for different modulation formats

In this paper, we investigated the performance of multi terabits DWDM system consisting of hybrid optical amplifier RAMAN-EDFA for different data format such as non-return to zero (NRZ), return to zero (RZ) and differential phase shift keying (DPSK). We find that in 64 × 10 and 96 × 10 Gbps, RZ is more adversely affected by nonlinearities, where as NRZ and DPSK is more affected by dispersion. We further show that RZ provide good quality factor (13.88 dB and 15.93 dB for 64 and 96 channels), less eye closure (2.609 dB and 3.191 dB for 64 and 96 channels) and acceptable bit error rate (3.89 × 10⁸ and 1.24 × 10⁹ for 64 and 96 channels) at the respective distance as compare to other existing modulation format. We further investigated the maximum single span distance covered by using existing data formats.     

A novel 1 × 2 optical power splitter with PBG structures on SOI substrate

A novel 1 × 2 optical power splitter in size of 8.0 μm × 4.2 μm is presented in this paper, by using photonic bandgap (PBG) structures on silicon-on-insulator (SOI) substrate. The splitting ratio can be adjusted by changing the air hole position to get wide tuning range. The design is examined by the commercial finite-difference-time-domain (FDTD) software for various splitting ratios. Some approximated formulas are obtained through curve-fitting to facilitate design process.     

Simulation of 16 × 10 Gb/s WDM system based on optical amplifiers at different transmission distance and dispersion

In this paper, the 16 channel WDM systems at 10 Gb/s have been investigated for the various optical amplifiers and hybrid optical amplifiers and the performance has been compared on the basis of transmission distance and dispersion. The amplifiers EDFA and SOA have been investigated independently and further compared with hybrid optical amplifiers like RAMAN-EDFA and RAMAN-SOA. It is observed that hybrid optical amplifier RAMAN-EDFA provides the highest output power (12.017 and 12.088 dBm) and least bit error rate (10^?40 and 9.08 × 10^?18) at 100 km for dispersion 2 ps/nm/km and 4 ps/nm/km respectively.     

Nonlinear optical properties of CdxZn1 − xO films deposited with PLD technique

In this paper, the structural and optical properties of Cd_xZn_1 ? xO films were studied. The films were deposited with pulse laser deposition (PLD) technique. The Cd concentration changed in the range from x = 0 to 0.2. The structure of the films was characterized by atom force microscope (AFM) and X-ray diffraction (XRD). The nonlinear optical properties were investigated by Z-scan methods. The two-photon absorption (TPA) coefficient β_eff was measured. The β_eff value changes from 49.2 cm/GW to 116.5 cm/GW with the Cd concentration from 0 to 15%.     

Calculation of electronic and optical properties of zinc blende GaP1 − xNx

In order to clarify the electronic properties of the ternary compound semiconductor GaPN, in a zinc-blende structure, a simple pseudopotential scheme (EPM), within an effective potential (VCA), is proposed. The effects of disorder and spin–orbit coupling are neglected. Various quantities, such as energy levels, charge densities, ionicity character, transverse effective charge, and refractive index are obtained for this alloy. Moreover, the crossover of the direct and indirect band gaps is predicted.     

Calculation of the optical and electronic properties of the zinc-blende alloy Zn1 − xMgxSe

In order to clarify the electronic and optical properties of wide-energy gap zinc-blende structures ZnSe, MgSe and their alloys (ZnSe)_1 − x(MgSe)_x, a simple pseudo-potential scheme (EPM) within an effective potential, the virtual crystal approximation (VCA) which incorporates compositional disorder as an effective potential, is presented. Various quantities, including the fundamental band gap, the energies of several optical gaps, charge densities, ionicity character, transverse effective charge, and refractive index are obtained for this alloy.     

Electronic structure of CuClxBr1 − x,CuClxI1 − xand CuBrxI1 − xalloys

In this work, the electronic structure and disorder effects in copper halides alloys are studied by means of the full potential linearized augmented plane wave (FLAPW) method. The calculated bowing parameter shows that the main contribution is due to the relaxation effects, though the charge transfer remains relatively significant, while the volume deformation contribution is negligible. The total bowing is found to be small in the three studied alloys. Results agree well with experimental and available theoretical works.     

The effect of In/N ratio on the optical quality and lasing threshold in GaxIn1 − xAs1 − yNy/GaAs laser structures

We present a review of published work concerning the effect of In and N compositions on the operation wavelength, optical quality and lasing threshold in Ga_xIn_1 − xAs_1 − yN_y/GaAs QW and double heterostructure lasers. We show that the emission wavelength in the range between 1.0 and 1.4 μ m can be obtained for a wide range of In and/or N concentrations. However, in most Fabry–Perot lasers and vertical cavity surface emitting lasers (VCSELs) reported in the literature, the threshold current density plotted as a function of the relative In/N composition (R =  (1  − x) / y) indicate a broad minima for 40  < R <  70, suggesting an optimum relative composition. We also present the results of our studies concerning the optical quality of Ga_xIn_1 − xAs_1 − yN_y/GaAs single quantum wells for R =  15. We show that the optical quality of GaInAsN can be improved while achieving a red shift in the PL spectra. This is unlike the results obtained by rapid thermal annealing or conventional annealing, which are widely employed as post-growth treatment techniques, where any increase in the PL intensity is almost always accompanied by an undesired blue shift.     

1.55 μm silicon-based reflection-type waveguide-integrated thermo-optic 2 × 2 switch

In this work a waveguide-integrated 2 × 2 switch operating at the infrared communication wavelength of 1550 nm is proposed and theoretically discussed. The device is based on the total internal reflection (TIR) phenomenon and the thermo-optic effect (TOE) in hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si). It takes advantage of a bandgap-engineered a-Si:H layer to explore the properties of an optical interface between materials showing similar refractive indexes but different thermo-optic coefficients. In particular, thanks to modern plasma-enhanced chemical vapour deposition (PECVD) techniques, the refractive index of the amorphous film can be properly tailored to match that of c-Si at a given temperature. TIR may be therefore achieved at the interface by acting on the temperature. The device is integrated in a 4 μm-wide and 3 μm-thick single-mode rib waveguide. The substrate is a silicon-on-insulator (SOI) wafer with an oxide thickness of 500 nm. We calculated an output crosstalk always better than 24 dB and insertion losses as low as 3.5 dB.     

Strained c(4 × 2) CoO(1 0 0)-like monolayer on Pd(1 0 0): Experiment and theory

We report on an interface-stabilized strained c(4 × 2) phase formed by cobalt oxide on Pd(1 0 0). The structural details and electronic properties of this oxide monolayer are elucidated by combination of scanning tunneling microscopy data, high resolution electron energy loss spectroscopy measurements and density functional theory. The c(4 × 2) periodicity is shown to arise from a rhombic array of Co vacancies, which form in a pseudomorphic CoO(1 0 0) monolayer to partially compensate for the compressive strain associated with the large lattice mismatch (～9.5%) between cobalt monoxide and the substrate. Deviation from the perfect 1:1 stoichiometry thus appears to offer a common and stable mechanism for strain release in Pd(1 0 0) supported monolayers of transition metal rocksalt monoxides of the first transition series, as very similar metal-deficient c(4 × 2) structures have been previously found for nickel and manganese oxides on the same substrate.     

Ternary effects on the optical interface phonons in onion-like GaN/AlxGa1 − xN quantum dots

The interface optical phonons and its ternary effects in onion-like quantum dots are studied by using dielectric continuum model and the modified random-element isodisplacement model. The dispersion relations, the electron–phonon interactions and ternary effects on the interface optical phonons are calculated in the GaN/Al_xGa_1 − xN onion-like quantum dots. The results show that aluminium concentration has important influence on the interface optical phonons and electron–phonon interactions in GaN/Al_xGa_1 − xN onion-like quantum dots. The frequencies of interface optical phonons and electron–phonon coupling strengths change linearly with increase of aluminium concentration in high frequency range, and do not change linearly with increasing aluminium concentration in low frequency range.     

Haven Correlation Parameter for Diffusion of Fluorine in Superionic Conductors La1 – ySryF3 – y

Physics of the Solid State - The processes of electric charge transfer (conductivity) and mass transfer (diffusion) in La1&nbsp;‒&nbsp;ySryF3&nbsp;–&nbsp;y superionic...     

Synthesis and electrical properties of nanocrystalline Ca1 − xEuxMnO3 ± δ (0.1 ≤ x ≤ 0.4) powders prepared at low temperature using citrate gel method

Nanopowders of Ca_1 − xEu_xMnO₃ (0.1 ≤ x ≤ 0.4) manganites were synthesized as a single phase using the auto gel-combustion method. The citrate method shows to be simple and appropriate to obtain single phases avoiding segregation or contamination. The Ca_1 − xEu_xMnO₃ system has been synthesized at 800 °C during 18 h, against the conventional method of mixing oxides used to obtain these materials at higher temperatures of synthesis. The formation reaction was monitored by X-ray diffraction (XRD) analysis and an infrared absorption technique (FTIR). The polycrystalline powders are characterised by nanometric particle size, ∼ 48 nm as determined from X-ray line broadening analysis using the Scherrer equation. Morphological analysis of the powders, using the scanning electron microscope (SEM), revealed that all phases are homogeneous and the europium-substituted samples exhibit a significant decrease in the grain size when compared with the undoped samples. The structure refinement by using the Rietveld method indicates that the partial calcium substitution by europium (for x ≥ 0.3) modifies the orthorhombic structure of the CaMnO₃ perovskite towards a monoclinic phase. All manganites show two active IR vibrational modes around 400 and 600 cm^− 1. The high temperature dependence of electrical resistivity (between 25 and 600 °C) allows us to conclude that all the samples exhibit a semiconductor behaviour and the europium causes a decrease in the electrical resistivity by more than one order of magnitude. The results can be well attributed to the Mn⁴⁺/Mn³⁺ ratio.     

Selective adsorption of coronene on Si(1 1 1)-(7 × 7)

The adsorption of coronene (C₂₄H₁₂) on the Si(1 1 1)-(7 × 7) surface is studied using scanning tunneling microscopy (STM). Upon room temperature submonolayer deposition, we find that the coronene molecules preferentially adsorb on the unfaulted half of the 7 × 7 unit cell. Molecules adsorbed on different sites can be induced to move to the preferential sites by the action of the tip in repeated image scans. Imaging of the molecules is strongly bias dependent, and also critically depends on the adsorption site. We analyze the results in terms of differential bonding strength for the different adsorption sites and we identify those substrate atoms which participate in the bonding with the molecule.     

On coordinate transformations associated with the optical 1 + 1 lossless cubic–quintic Schrödinger equation

The mathematical structure of the transformations of coordinates involved in the optical 1 + 1 lossless cubic–quintic Schrödinger equation is investigated in relation to the amplitude and phase of the solitary-wave functions which are solutions to the equation in question. In fact, the above coordinate transformations are characterized algebraically by using matrices.     

Interaction of Ag with the Si(1 1 1)1 × 1–H surface

Synchrotron radiation based photoemission spectroscopy (SRPES) and low energy electron diffraction (LEED) are used to study the interaction between Ag atoms and the Si(1 1 1)1 × 1–H surface. At an Ag coverage of 0.063 monolayers (ML) on the Si(1 1 1)1 × 1–H surface, the Si 2p component corresponding to Si–H bonds decreases, and an additional Si 2p component appears which shifts to a lower binding energy by 109 meV with respect to the Si bulk peak. The new Si 2p component is also observed for 0.25 ML Ag on the Si(1 1 1)7 × 7 surface. These findings suggest that Ag atoms replace the H atoms of the Si(1 1 1)1 × 1–H surface and form direct Ag–Si bonds. Contrary to the widely accepted view that there is no chemical interaction between Ag particles and the H-passivated Si surface, these results are in good agreement with recent first-principles calculations.     

H adsorption at Ag/Si interfaces in epitaxially grown Ag(1 1 1) films on Si(1 1 1)7 × 7 substrates

The interaction of atomic H with Ag(1 1 1)/Si(1 1 1)7 × 7 surfaces was studied by thermal desorption (TD) spectroscopy and scanning tunneling microscopy (STM) at room temperature. TD spectroscopy revealed an intense peak from mono H–Si bonds, even though the Si surface was covered by the Ag atoms. This peak was not observed from Ag-coated SiO₂/Si substrates. STM observation showed no clear change of the Ag surface morphology resulting from H exposure. All these results indicate that the atomic H adsorbs at neither the Ag surfaces nor Ag bulk sites, but at the Ag/Si interface by diffusing through the Ag film.     

Oxygen nonstoichiometry and defect equilibrium in La2 − xSrxNiO4 + δ

Nonstoichiometric variation of oxygen content in La_2 ? xSr_xNiO_4 + δ (x = 0, 0.1, 0.2, 0.3, 0.4) and decomposition P(O₂) were determined by means of high temperature gravimetry and coulometric titration. The measurements were carried out in the temperature range between 873 and 1173 K and the P(O₂) range between 10^? 20 and 1 bar. La_2 ? xSr_xNiO_4 + δ showed the oxygen excess and the oxygen deficient compositions depending on P(O₂), temperature, and the Sr content. The value of partial molar enthalpy of oxygen approaches zero as δ increases in the oxygen excess region, which indicate that the interstitial oxygen formation reaction is suppressed as δ increase. The relationship between δ and logP(O₂) were analyzed by two types of defect equilibrium models. One is a localized electron model, and the other is a delocalized electron model. Both models can well explain the oxygen nonstoichiometry of La_2 ? xSr_xNiO_4 + δ with a regular solution approximation.     

Coverage dependence of glycine adsorption on the Ge(100) − 2 × 1 surface

A combination of infrared spectroscopy, X-ray photoelectron spectroscopy and density functional theory has been used to investigate the adsorption behavior of glycine at the Ge(100) ? 2 × 1 surface under ultrahigh vacuum conditions. Comparison of experimental and simulated IR spectra indicates that at 310 K, glycine adsorbs on Ge(100) ? 2 × 1 via O–H dissociation, with some fraction of the products also forming an N dative bond to a neighboring germanium atom. O–Ge dative bonding is not observed. As coverage increases, the surface concentration of the monodentate O–H dissociated adduct increases, while that of the N dative-bonded species appears constant. XPS data support and clarify the IR findings and reveal new insights, including the presence at higher coverage of a minor product that has undergone dual O–H and N–H dissociation. These findings are supported by the calculated energy diagrams, which indicate that the reaction of a glycine molecule on the Ge(100) ? 2 × 1 surface via O–H dissociation and interdimer N dative bonding is both kinetically and thermodynamically favorable and that N–H dissociation of this adduct is feasible at room temperature given incomplete thermal accommodation along the reaction pathway.