甲基环己烷在9∽15.5 eV能量区的真空紫外光电离研究

利用具有同步辐射源的反射式飞行时间质谱仪,研究甲基环己烷的真空紫外光电离和光解离. 观测到母体离子C₇H₁₄⁺和碎片离子C₇H₁₃⁺,C₆H₁₁⁺,C₆H₁₀⁺,C₅H₁₀⁺,C₅H₉⁺,C₄H₈⁺,C₄H₇⁺和C₃H₅⁺的光电离效率曲线. 测定甲基环己烷的电离能为9.80±0.03 eV,通过光电离效率曲线确定其碎片离子的出现势. 在B3LYP/6-31G(d)水平上对过渡态、中间体和产物离子的优化结构进行表征,并使用G3B3方法计算其能量. 提出主要碎片离子的形成通道. 分子内氢迁移和碳开环是甲基环己烷裂解途径中最重要的过程.     

有机分子超薄膜的结构对摩擦的影响

采用分子动力学方法, 模拟了由脂肪酸C_nH_2n+1COOH}和C₁₇H₃₁COOH (n=12,13,14,15,16,17)组成的混合单层Langmuir-Blodgett(LB)膜间的摩擦特性, 探究了膜结构的变化对超薄膜的摩擦的影响. 结果显示. 在滑动过程中, 随着n的增加, 膜内分子的运动受到邻近分子的约束逐渐增加, 膜结构的稳定性也逐渐增加, 其剪切压逐渐减小, n=17时的剪切压最小. 在两单层膜之间无氢键形成; 而混合膜内的分子之间形成的氢键是单层膜结构稳定的主要因素, 其中n=16时形成的氢键最稳定, 但全部由相同C₁₇H₃₁COOH分子组成的单层膜的滑动效果最好. 分子的弯曲形变能对剪切压影响非常小.     

环戊酮光电离解离的实验和理论研究

本文介绍了真空紫外光电离质谱结合理论计算研究环戊酮单分子的光电离解离过程. 在9.0∽15.5 eV能量范围内,测量了环戊酮离子及其碎片离子的光电离效率曲线. 通过光电离效率曲线,将环戊酮分子的电离能确定为9.23±0.03 eV,并确认碎片离子为：C₅H₇O⁺,C₄H₅O⁺,C₄H₈⁺,C₃H₃O⁺,C₄H₆⁺,C₂H₄O⁺,C₃H₆⁺,C₃H₅⁺,C₃H₄⁺,C₃H₃⁺,C₂H₅⁺, C₂H₄⁺. 利用量子化学计算方法,在ωB97X-D/6-31+G(d,p)理论水平基础上,提出了C₅H₈O⁺的解离机制. 通过对环戊酮解离路径的分析,发现开环和氢迁移过程为环戊酮离子解离的主要路径.     

异戊二烯解离光电离理论研究

利用CBS-QB3理论计算方法研究了异戊二烯的可能解离通道.获得了主要碎片离子C₅H₇⁺,C₅H₅⁺,C₄H₅⁺,C₃H₆⁺,C₃H₅⁺,C₃H₄⁺,C₃H₃⁺的C₂H₃⁺的结构以及这些解离通道的解离能,并给出了相应的过渡态和中间体的结构和位垒.得到的异戊二烯电离势及主要碎片离子的出现势均与实验值符合的较好.最后,通过理论和实验结果的对比讨论了各通道的解离机理.     

分子团簇表面吸附敏化ZnO纳米线的第一性原理研究

ZnO纳米线作为新型太阳能电池结构的重要组成部件之一, 其导电能力直接影响到太阳能电池的性能. 采用密度泛函理论平面波超软赝势方法, 计算并分析了C₂H₆O(乙醇)、 C₆H₅FS(4-氟苯硫酚)、 C₇HF₇S(4-(三氟甲基L)-2, 3, 5, 6-四氟硫代苯酚) 等小分子吸附的六边形结构\langle0001angle ZNWs (ZnO 纳米线) 的几何结构、 吸附能和电子结构. 首先, 通过几何优化得到了不同基团吸附的ZNWs的稳定结构, 同时吸附能计算结果表明C₇HF₇S吸附的体系结构最为稳定, 且吸附呈现放热反应; 其次, 为研究表面敏化对导电性能的影响, 计算了不同小分子基团吸附下的能带结构和态密度, 并利用能带理论分析了表面吸附敏化对禁带宽度的调控机理, 结果分析表明小分子表面吸附敏化对ZNWs的电学性能有一定的影响, 其中C₇H₇FS和C₆H₅FS分子均发生了不同程度的电荷转移.     

苯和苯胺在深紫外光照射下的电离和解离

本文利用自主研制的反射式飞行时间质谱仪结合177.3 nm深紫外激光研究了苯和苯胺分子的光电离与光解离过程. 质谱实验发现苯在177.3 nm皮秒激光作用下发生高效电离并观测到不对称C-C键解离形成的以C₄H₃⁺为主的较小碎片峰. 相比之下,苯胺的深紫外光电离中主要产生一个C₅H₆^+·离子自由基和一个较小丰度的C₆H₆^+·碎片,分别对应于CNH分子和NH自由基的去除. 结合第一性原理计算,诠释了苯和苯胺这两个仅有一个氨基差异的分子光解离路径,揭示苯和苯胺分子中氢原子转移对于C-C或C-N键断裂的关键重要作用.     

类Ni稀土X光激光波段衰减膜的设计与研究

 对类Ni稀土X光激光波段衰减膜进行了设计,并根据设计结果,利用磁控溅射和旋转涂覆法分别制备了自支撑的Ag衰减膜和聚苯乙烯(C₈H₈)衰减膜。利用真空α能谱测厚仪和α-step100台阶仪分别对衰减膜的质量厚度和均匀性进行了测量,用Auger电子能谱(A ES)对Ag衰减膜进行了表面杂质分析。     

聚苯乙烯薄膜对自支撑锆薄膜的性能改善

 利用直流磁控溅射方法和提拉法制备了自支撑Zr/C₈H₈复合滤光膜和C₈H₈滤光膜。用同步辐射光源测量了滤光膜对软X射线的透射率，用俄歇电子能谱分析了膜中的元素含量。结果表明，虽然C8H8薄膜的加入在一定程度上降低了Zr滤光膜在软X射线波段的透射率，但较好地阻止了存储和使用过程中氧、氮等杂质对Zr金属膜的入侵，有效地改善了滤光膜的环境稳定性；同时很好地改善了Zr滤光膜的力学性能和表面面形，使制备的成品率提高了20%。     

π-(C5H5)2TiCl2·AlR3系可溶性催化剂的电子自旋共振波谱

本文稿研究了Al(iC₄H₉)₃、Al(C₂H₅)₃、Al(C₂H₅)₂Cl、Al(C₂H₅)Cl₂等与π-(C₅H₅)₂TiCl₂所形成的络合物在无溶剂以及在溶剂稀释过程中的电子自旋共振波谱。根据实验结果,作者认为未成对电子是定位在Al²⁷核一端,电子云可延伸到α氢原子位置上,并指出溶剂主要起着分散络合物的作用。     

交叉分子束研究氟原子与1,2-丁二烯反应动力学

利用通用型交叉分子束研究了氟原子与1,2-丁二烯的反应,观测到了C₄H₅F+H反应通道. 测量产物C₄H₅FF在实验坐标下的角度分辨的飞行时间谱,获得了这个通道质心坐标下的产物角分布和动能分布. 实验结果表明,相对于氟原子束方向,产物C₄H₅FF主要是后向散射,同时也有大量的前向散射. 这表明反应通道主要通过长寿命的络合物形成机理进行的,同时也伴有直接的双分子亲核取代反应(SN2)机理.     

Adsorption of organic molecules by photochemical reaction on Cl:Si(1 1 1) and H:Si(1 1 1) evaluated by HREELS

The covalent attachment of alkyl groups to silicon surfaces, via carbon-silicon bond formation, has been attempted using gas-surface reactions starting from Cl-terminated Si(1 1 1) or H:Si(1 1 1) under ultraviolet light irradiation. The formation of Cl-terminated Si(1 1 1) and its resulting stability were examined prior to deposition of organic molecules. High-resolution electron energy loss spectroscopy (HREELS) was utilized for detecting surface-bound adsorbates. The detection of photo-deposited organic species on Cl:Si(1 1 1) from gas-phase CH₄ or CH₂CH₂ was not significant. On H:Si(1 1 1), it was evident that after the photoreaction with gas-phase C₂H₅Cl, C₂H₅ groups were chemically bonded to the surface Si atoms through single covalent bonds. The C₂H₅ groups were thermally stable at temperatures below 600 K. Alkyl monolayers prepared on silicon surfaces by dry process will lead to a new prospective technology of nanoscale fabrication and biochemical applications.     

Covalent functionalization of silicon nitride surfaces by semicarbazide group

The paper reports on the covalent attachment of semicarbazide functional groups onto hydrogen-terminated silicon-rich silicon nitride (Si_xN₄; 4 < x < 5) surface under photochemical conditions. UV-irradiation (254 nm) of the surface coated with a thin film of tert-butyl 2-[(allylamino)carbonyl]hydrazine-carboxylate yields an organic monolayer covalently attached to the surface via Si-C bonds and terminated with t-Boc-protected semicarbazide moieties. Removal of the protecting group produces a reactive semicarbazide-terminated monolayer. The photo-induced reaction was investigated by means of X-ray photoelectron spectroscopy (XPS) and contact angle measurements.     

Friction,adhesion and wear durability of an ultra-thin perfluoropolyether-coated 3-glycidoxypropyltrimethoxy silane self-assembled monolayer on a Si surface

The tribological properties, such as coefficient of friction, adhesion and wear durability of an ultra-thin (<10?nm) dual-layer film on a silicon surface were investigated. The dual-layer film was prepared by dip-coating perfluoropolyether (PFPE), a liquid polymer lubricant, as the top layer onto a 3-glycidoxypropyltrimethoxy silane self-assembled monolayer (epoxy SAM)-coated Si substrate. PFPE contains hydroxyl groups at both ends of its backbone chain, while the SAM surface contains epoxy groups, which terminate at the surface. A combination of tests involving contact angle measurements, ellipsometry, atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) was used to study the physical and chemical properties of the film. The coefficient of friction and wear durability of the film were investigated using a ball-on-disk tribometer (4?mm diameter Si₃N₄ ball as the counterface at a nominal contact pressure of ～330?MPa). AFM was used to investigate the adhesion forces between a sharp Si₃N₄ tip and the film. This dual-layer film had a very low coefficient of friction, adhesion and wear when compared to epoxy SAM-coated Si only or bare Si surface. The reasons for the improved tribological performance are explained in terms of the lubrication characteristics of PFPE molecules, low surface energy of PFPE, covalent bonding between PFPE and epoxy SAM coupled with reduced mobile PFPE. The low adhesion forces coupled with high wear durability show that the film has applications as a wear resistant and anti-stiction film for microcomponents made from Si.     

CF interaction with Si(1 0 0)-(2 × 1): Molecular dynamics simulation

In this study, the interaction of CF with the clean Si(1 0 0)-(2 × 1) surface at normal incidence and room temperature was investigated using molecular dynamics simulation. Incident energies of 2, 12 and 50 eV were simulated. C atoms, arising from dissociation, preferentially react with Si to form Si-C bonds. A Si_xC_yF_z interfacial layer is formed, but no etching is observed. The interfacial layer thickness increases with increasing incident energy, mainly through enhanced penetration of the silicon lattice. Silicon carbide and fluorosilyl species are formed at 50 eV, which is in good agreement with available experimental data. The level of agreement between the simulated and experimental results is discussed.     

Structural studies of thin silicon layers repeatedly implanted by carbon ions

The composition and structure of homogeneous SiC_1.4 and SiC_0.12 layers produced by multiple implantation of 40-, 20-, 10-, 5-, and 3-keV carbon ions into silicon were studied by electron microscopy, x-ray diffraction, Auger spectroscopy, and IR spectroscopy. The temperature dependences of the IR transmittance peak parameters obtained in the range 200–1400°C indicate that the increase in the number of carbon atoms that are bound to silicon atoms and are involved in absorption is caused by the formation and breaking of hexagonal, near-tetrahedral, and multiple Si-C bonds and by the decomposition of optically active strong carbon clusters. The high crystallization temperature of SiC (1200°C) in the SiC_1.4 layer is explained by the presence of stable multiple Si-C bonds and strong carbon clusters. Strong carbon clusters are shown to exist in the implanted SiC_0.12 layer, and their decomposition is found to affect the formation of tetrahedral bonds in the temperature range 1200–1400°C.     

Structural and optical properties of the SiCN thin films prepared by reactive magnetron sputtering

Silicon carbonitride (SiCN) thin films were deposited on n-type Si (1 0 0) and glass substrates by reactive magnetron sputtering of a polycrystalline silicon target in a mixture of argon (Ar), nitrogen (N₂) and acetylene (C₂H₂). The properties of the films were characterized by scanning electron microscope with an energy dispersive spectrometer, X-ray diffraction, Fourier transform infrared spectroscopy, X-ray photoelectron spectrometry and ultraviolet-visible spectrophotometer. The results show that the C₂H₂ flow rate plays an important role in the composition, structural and optical properties of the films. The films have an even surface and an amorphous structure. With the increase of C₂H₂ flow rate, the C content gradually increases while Si and N contents have a tendency to decrease in the SiCN films, and the optical band gap of the films monotonically decreases. The main bonds are Si-O, N-H_n, C-C, C-N, Si-N, Si-C and Si-H in the SiCN films while the chemical bonding network of Si-O, C-C, C-O, C-N, N-Si and CN is formed in the surface of the SiCN films.     

Enhancement of the room temperature oxidation of silicon by very thin predeposited gold layers

The oxidation of Si(111) surfaces covered with very thin layers of gold is studied by Auger and electron energy loss spectroscopies under ultra high vacuum conditions. It is found that by exposing the Au covered surface to an oxidizing atmosphere, formation of silicon dioxide occurs at room temperature on top of the substrate and the presence of SiO₄ tetrahedra is clearly seen on electron energy loss spectra. In contrast, oxidation under the same conditions of a clean Si(111) surface leads to the formation of an oxygen monolayer and no structure corresponding to Si-O bonds in SiO₄ tetrahedra are observed. This enhancement of the oxidation is attributed to a change in the hybridization state of Si atoms in a gold environment.     

A HREELS study of the UV photon-induced chemistry of C6H5Cl adsorbed on Ag{111}

The UV photochemistry of both monolayer and multilayer C₆H₅Cl adsorbed on Ag{111} surfaces has been studied using high resolution electron energy loss spectroscopy (HREELS). Photon-induced dissociation via the cleavage of the CCl bonds was observed as a common feature. For the monolayer, chemisorbed biphenyl appears to be formed on the surface after photolysis at 110 K and subsequent annealing to 300 K. The two phenyl rings are found to lie parallel to the metal surface. The photon-induced dissociation of multilayer C₆H₅Cl leads, however, to photopolymerization as shown by the high thermal stability of the surface species formed and the detection of simple additive products in thermal desorption.     

Interfacial behavior of alkyltrichlorosilane monolayers on silicon: Control of flat-band potential and surface state distribution using chain length variation

The passivating behavior of octadecyltrichlorosilane (C₁₈), dodecyltrichlorosilane (C₁₂) and octyltrichlorosilane (C₈) self-assembled monolayers (SAMs) on Si(1 0 0), has been quantitatively compared using cyclic voltammetry and impedance analysis in the presence and absence of an external redox probes like ferrocene. In all these cases, Fourier transform infra red (FTIR) spectroscopy and contact angle measurements give clear evidence for the presence of a closely packed, oriented and hydrophobic monolayer. The electron transfer behavior of ferrocene is found to be drastically affected by the presence of monolayer and the reasons for such significant variation are analyzed in terms of the change in resistance, dielectric thickness and coverage of the monolayer. Double layer capacitance is found to decrease systematically with increasing the chain length of the monolayer suggesting a smooth variation in the “plane of closest approach” with the thickness of the monolayer, despite the presence of a space charge layer on Si electrode. Comparison of the electrochemical properties of the SAM-derivatized Si electrodes with that of a bare Si electrode using impedance analysis exhibits a four order of magnitude decrease in the apparent rate constant of ferrocene oxidation due to the barrier provided by various monolayers (C₈, C₁₂, C₁₈). A peak in the capacitance-potential curve presumably, due to surface states, is suppressed with an increase in the chain length of the monolayer. In addition, a positive shift in flat-band potential (E_fb) with the monolayer chain length, suggests the covalent coupling of the silane monolayer.     

The chemisorption of pentacene on Si(0 0 1)-2 × 1

Adsorption structures of the pentacene (C₂₂H₁₄) molecule on the clean Si(0 0 1)-2 × 1 surface were investigated by scanning tunneling microscopy (STM) in conjunction with density functional theory calculations and STM image simulations. The pentacene molecules were found to adsorb on four major sites and four minor sites. The adsorption structures of the pentacene molecules at the four major sites were determined by comparison between the experimental and the simulated STM images. Three out of the four theoretically identified adsorption structures are different from the previously proposed adsorption structures. They involve six to eight Si-C covalent chemical bonds. The adsorption energies of the major four structures are calculated to be in the range 67-128 kcal/mol. It was also found that the pentacene molecule hardly hopped on the surface when applying pulse bias voltages on the molecule, but was mostly decomposed.