Ar16+和Ar17+离子与Zr作用产生的X射线谱

将超导离子源提供的10—20keV/q Ar¹⁶⁺和Ar¹⁷⁺离子入射到Zr金属表面,在相互作用中产生的X射线谱表明,高电荷态Ar¹⁶⁺离子在金属表面中性化过程中有可能存在多电子激发,使Ar¹⁶⁺的K壳层电子被激发形成空穴,在退激过程中发射特征Kα-X射线.空心原子Ar的K层发射X射线强度随入射离子的动能而减弱,靶原子Zr的L壳层发射X射线强度随入射离子动能的增加而增强.Ar¹⁷⁺的单离子的Kα- 关键词： 高电荷态离子 空心原子 X射线     

高电荷态离子Arq+与不同金属靶作用产生的X射线

研究了高电荷态离子Arq+(q=16,17,18)入射金属Be,Al,Ni,Mo,Au靶表面产生的X射线谱.实验结果表明,Ar的Kα-X射线是离子在与固体表面相互作用过程中固体表面之下形成空心原子发射的.电子组态1s2的高电荷态Ar16+离子在金属表面中性化过程中,存在的多电子激发过程使Ar16+的K壳层电子激发产生空穴,级联退激发射Ar的Kα特征X射线.Ar17+离子在金属表面作用过程中产生的X射线谱形与靶材料没有明显的关联,入射离子的Kα-X射线产额与其最初的电子组态有关,靶原子的X射线产额与入射离子的动能有关.     

Ar16+和Ar17+离子与Zr作用产生的X射线谱

将超导离子源提供的10-20keV/q Ar16 和Ar17 离子入射到Zr金属表面,在相互作用中产生的X射线谱表明,高电荷态Ar16 离子在金属表面中性化过程中有可能存在多电子激发,使Ar16 的K壳层电子被激发形成空穴,在退激过程中发射特征Kα-X射线.空心原子Ar的K层发射X射线强度随入射离子的动能而减弱,靶原子Zr的L壳层发射X射线强度随入射离子动能的增加而增强.Ar17 的单离子的Kα-X射线产额比Ar16 单离子的Kα-X射线产额大5个数量级.     

Ar的类氦和类锂离子与Mo表面相互作用过程中的x射线发射

在兰州重离子加速器国家实验室电子回旋共振离子源上用Si(Li)探测器观测到了不同动能的Ar¹⁵⁺和Ar¹⁶⁺离子与Mo表面相互作用过程产生的x射线.在不同动能 的Ar¹⁶⁺与Mo表面作用过程中不仅能观测到Ar的K层x射线而且能观测到Mo的L层x 射线.在不同动能的Ar¹⁵⁺入射下只能观测到Mo的L层x射线.实验结果表明，Ar的 K层x 射线的产额与入射离子的动能、作用过程中形成的空心原子携带的势能以及入射离子和靶原 子x射线的竞争等有关，Mo的L层x射线随入射离子动能的增加而增加. 关键词： x射线发射 高电荷态离子 Mo表面     

Ar16+和Ar17+离子与Zr作用产生的X射线谱

将超导离子源提供的10—20keV/q Ar¹⁶⁺和Ar¹⁷⁺离子入射到Zr金属表面，在相互作用中产生的X射线谱表明，高电荷态Ar¹⁶⁺离子在金属表面中性化过程中有可能存在多电子激发，使Ar¹⁶⁺的K壳层电子被激发形成空穴，在退激过程中发射特征Kα-X射线.空心原子Ar的K层发射X射线强度随入射离子的动能而减弱，靶原子Zr的L壳层发射X射线强度随入射离子动能的增加而增强.Ar¹⁷⁺的单离子的Kα-     

类钴氙离子入射Ni表面激发的红外光谱线和X射线谱

当高电荷态类钴氙离子（cobalt like -Xe, Xe²⁷⁺）入射金属Ni表面过程中,共振电子俘获释放势能完成中性化,形成多激发态的Xe原子,其外壳层电子退激辐射红外光谱线.入射离子特殊的势能释放方式、离子动能和金属表面引起离子增益的能量在极短的时间（飞秒量级）沉积靶平方纳米尺度的空间范围,引起靶表面原子激发和电离,形成复杂组态之间的跃迁,特别是偶极禁戒跃迁（电四极跃迁、磁偶极跃）和X射线发射.单离子X射线产额随入射离子的动能增加而增加. 关键词： 高电荷态离子 红外光谱线 X射线 禁戒跃迁     

高电荷态离子Arq+入射在金属表面形成靶原子X射线谱

本文报道低能高电荷Ar12+、Ar13+ 、Ar14+离子与金属Mo表面作用过程中Mo原子受激发射X射线和X射线强度随入射能量变化的实验结果.结果表明,低速高电荷离子与金属表面原子相互作用可有效地激发靶原子或靶离子内壳层电子而发射X射线.     

低能高电荷态O~(q+)离子与Al表面作用产生的X射线

报道了 1.5—20 keV/q的高电荷态O~(q+)(q=3—7)离子与Al表面相互作用发射的O原子的特征X射线谱.分析表明,对于O~(q+)(q=3—6)离子入射时发射的X射线,是由于离子进入表面后与Al原子发生紧密碰撞导致的;而O~(7+)离子入射时的X射线,主要来自于"空心原子"的衰变.在动能相等的条件下,存在K壳层空穴的O~(7+)离子的X射线产额相较于O~(q+)(q=3—6)离子高一个数量级,不存在K壳层空穴的O~(6+)离子的X射线产额也要高于O~(3+),O~(5+)离子.总体来说,X射线产额以及电离截面与入射离子的初始电子组态有关,且随离子入射动能的增加而增加.根据半经典两体碰撞模型,本文估算了入射离子与靶原子相互作用时分别产生O和Al的K_α-X射线的动能阈值.对于入射动能低于动能阈值且电子组态为1s~2的O~(6+)离子与样品表面相互作用,可能存在多电子激发使O~(6+)离子产生K壳层空穴.     

高电荷态离子入射Al表面库仑势对靶原子特征谱线强度的影响

用同一动能(150keV)而不同电荷态的⁴⁰Ar^q+(8≤q≤16)离子入射金属Al表面,靶原子受激辐射产生特征光谱线. 实验结果表明：高电荷态离子与金属表面相互作用过程中,经过与靶原子碰撞(Penning碰撞)交换动能和共振电子俘获(resonant capture)释放库仑势能,将携带的能量沉积于靶表面,使靶原子激发. 这种激发不同于光激发,它不仅激发了原子复杂电子组态之间的跃迁,而且跃迁辐射的特征谱线强度增强的趋势与入射粒子的库 关键词： 高电荷态离子 库仑势 特征光谱 光谱强度     

高电荷态Ar~(17+)离子在表面以下过程中发射X射线分支比及各分支能量的研究

对低速高电荷态Ar17+离子在与不同金属靶相互作用过程中放出的Ar离子K壳X射线的Kβ/Kα分支比及各分支K线平均能量进行了理论研究.在文献[28,29]的基础上,通过对实验数据的分析,得到了0.3—0.8玻尔速度之间的Ar17+离子与Be,Al,Ni,Mo,Au等金属相互作用过程中入射离子发出的X射线分支比及各分支平均能量.理论上,基于导带电子俘获模型和级联跃迁模型,建立耦合方程组,以解释实验主要结果,理论结果与实验符合较好.在此基础上讨论了低速高电荷态Ar17+离子在金属表面以下的空心原子形成及退激发过程中发射K壳X射线的物理图像.     

X-ray spectra induced in highly charged 40Arq+ interacting with Au surface

By use of optical spectrum technology, the spectra of X-ray induced by highly charged ⁴⁰Ar ^q+ ions interacting with Au surface have been studied. The results show that the argon Kα X-ray were emitted from the hollow atoms formed below the surface. There is a process of multi-electron exciting in neutralization of the Ar¹⁶⁺ion, with electronic configuration 1s² in its ground state below the solid surface. The yield of the projectile Kα X-ray is related to its initial electronic configuration, and the yield of the target X-ray is related to the projectile kinetic energy.     

X-ray spectra induced by slow highly charged Ar q + ions in collision with Nb surface

The X-ray spectra of Nb surface induced by Ar ^q+ (q = 16,17) ions with the energy range from 10 to 20 keV/q were studied by the optical spectrum technology. The experimental results indicate that the multi-electron excitation occurred as a highly charged Ar¹⁶⁺ ion was neutralized below the metal surface. The K shell electron of Ar¹⁶⁺ was excited and then de-excited cascadly to emit K X-ray. The intensity of the X-ray emitted from K shell of the hollow Ar atom decreased with the increase of projectile kinetic energy. The intensity of the X-ray emitted from L shell of the target atom Nb increased with the increase of projectile kinetic energy. The X-ray yield of Ar¹⁷⁺ is three magnitude orders larger than that of Ar¹⁶⁺. Supported by the National Natural Science Foundation of China (Grant Nos.10774149 and 10405025)     

X-Ray in Highly Charged Ar17+Ion Interacting with Mo Surface

The X-ray emission from the highly charged Ar¹⁷⁺ ion interacting with Mo surface are measured on the 14.5GHz Electron Cyclotron Resonance ion source facility at Institute of Modern, the Chinese Academy of Sciences in Lanzhou. Ar¹⁷⁺ ions came from Electron Cyclotron Resonance ion source and impacted on Mo surface.The incident ion with vacancy of inner shell captures electrons emitted from surface into highly excited Rydberg states, outer shell electron cascades into K vacancy giving rise to Kα X-ray emission of the incidentionsions.     

X-ray spectra induced in highly charged 40Arq+ interacting with Au surface

By use of optical spectrum technology, the spectra of X-ray induced by highly charged 40Arq+ ions interacting with Au surface have been studied. The results show that the argon Kα X-ray were emitted from the hollow atoms formed below the surface. There is a process of multi-electron exciting in neutralization of the Ar16+ion, with electronic configuration 1s2 in its ground state below the solid surface. The yield of the projectile Kα X-ray is related to its initial electronic configuration, and the yield of the target X-ray is related to the projectile kinetic energy.     

Interfacial electronic structure and ion beam induced effect of anatase TiO2 surface modified by Pd nanoparticles

Anatase TiO₂ surface could be modified by Pd nanoparticles using an electrochemical deposition method. Surface morphology, light absorption and interfacial electronic structures were studied by field emission scanning electron microscopy (FE-SEM), UV-visible reflectance absorption, X-ray diffraction (XRD) crystallography, and depth-profiling X-ray photoelectron spectroscopy (XPS). On the basis of XRD patterns, Pd 3d XPS and valance band spectra, the as-deposited overlayer Pd is metallic, with no detectable Pd oxides. The optical band gap of TiO₂ decreases from 3.25 to 3.14 eV upon Pd deposition. The XPS spectra with Ar⁺ ion sputtering show that 4+ oxidation state of Ti dramatically changes to lower (3+ and 2+) oxidation states. As a result of this, oxygen defects are created in the bulk while the oxygen diffuses outward to likely form hydroxyl group on the surface. The Pd 3d XPS peak shifts by +0.6 eV to a higher BE position, and the density of state at the Fermi level is more or less reduced. It appears that the overlayer Pd becomes less metallic, plausibly due to TiO₂ support and/or size effect. No critical interfacial interaction between Pd and TiO₂ was observed by XPS.     

Interplay of native defect-related photoluminescence response of ZnO nanosticks subjected to 80 keV Ar ion irradiation

We report on the effect of 80 keV Ar⁺ ion irradiation on the luminescence response of zinc oxide (ZnO) nanosticks synthesized using a simple microemulsion route. The formation of nanoscale rods was confirmed from the transmission electron microscopy, whereas the hexagonal wurtzite phase of the nanorods was detected in an X-ray diffraction pattern. The photoluminescence pattern of the nanorods was dominated by various native defect states of ZnO, which are responsible for the quenching of the typical band edge emission of ZnO. Under Ar⁺ ion irradiation at a fluence of 1×10¹³ ions/cm², the band edge emission was recovered owing to the suppression of oxygen vacancy defects. In addition, the formation of new zinc vacancy and ionized zinc interstitial defects were also evident. Conversely, the band edge emission was found to be quenched as a result of the creation of more oxygen vacancy (V_O) defects due to ion irradiation (fluence: 1×10¹⁵ ions/cm²). The nuclear energy loss of the Ar⁺ ions in ZnO is responsible for the formation of point (vacancy-related) defects, while relatively small amount of electronic energy loss of the Ar⁺ ion results in the ionization of the neutral zinc interstitial (Zn_i) defects. The energy deposition scheme of the energetic ions has been elaborated with the help of theoretical modeling that explains the observed features quite satisfactorily.     

Surface electronic and chemical structure of (1120)CdSe: Comparison with CdS

Surface photovoltage spectroscopy, Auger electron spectroscopy, LEED, X-ray and ultraviolet photoemission measurements are reported for (112̄0) CdSe under a variety of ultrahigh vacuum conditions. As with CdS, all surface electronic features can be related to chemical contamination, Ar⁺ bombardment-induced lattice defects, or bulk trap states. Oxygen adsorption on CdSe and CdS produce qualitatively different electronic features which are attributed to different bonding at surface vacancy sites. Changes in surface atomic order show no direct effect on measured electronic features. Furthermore, CdSe exhibits no intrinsic surface state features which can account for its Schottky barrier formation with metals.     

~(129)Xe~(q+)激发Mo表面产生的X射线谱

研究了高电荷态离子129Xeq+(q=25,26,27)入射金属Mo表面产生的特征X射线谱.实验结果表明,在束流强度小于120nA条件下,高电荷态离子129Xeq+可以激发Mo的L壳层特征X射线谱.单离子X射线相对产额可达10-8量级,特征X射线的相对产额随入射离子的动能和电荷态(势能)的增加而增加.通过Mo原子的Lα1特征X射线谱,利用Heisenberg不确定关系对Mo原子的第M能级寿命进行了估算.