Inelastic tunnel transport of electrons through an anisotropic magnetic structure in an external magnetic field

Quantum transport of electrons through a magnetic impurity located in an external magnetic field and affected by a substrate is considered using the Keldysh diagram technique for the Fermi and Hubbard operators. It is shown that in a strongly nonequilibrium state induced by multiple reflections of electrons from the impurity, the current-voltage (I–V) characteristic of the system contains segments with a negative conductivity. This effect can be controlled by varying the anisotropy parameter of the impurity center as well as the parameters of coupling between the magnetic impurity and metal contacts. The application of the magnetic field is accompanied by an increase in the number of Coulomb steps in the I–V curve of the impurity. The effect of appreciable magnetoresistance appears in this case. We demonstrate the possibility of switching between magnetic impurity states with different total spin projection values in the regime of asymmetric coupling of this impurity with the contacts.     

Giant magnetic moments in ferromagnetic oxide semiconductors

Concentration dependence of the specific magnetic moment of Co-and Fe-doped titanium oxide semiconductors has been studied at room temperature. A sharp increase in the magnetic moment has been found at low concentrations of a magnetic impurity. A giant value of 22.9 μ_B per impurity atom has been detected in TiO₂ with a Co concentration of 0.15 at %, which has never been observed in oxide systems. The giant magnetic moments observed at low impurity concentration are attributed to the polarization of a crystal lattice. Comparison with the literature data indicates that the concentration dependences of magnetization are different in different oxide matrices.     

Low temperature Kondo reduction of quadrupolar and magnetic moments in the YbCuAl series

We present measurements in the YbCu_5-xAl_x series, down to the 50 mK range, using ¹⁷⁰Yb M?ssbauer absorption spectroscopy and magnetisation measurements. In this series, the hybridisation between the Yb 4 f electrons and the conduction electrons is known to decrease as the Al content x increases. We apply the variational solution of the impurity Kondo problem to the interpretation of our data. We show that the Kondo temperature can be derived from the measured 4 f quadrupole moment and, for the magnetically ordered compounds (), we obtain the exchange energy as a function of the Al content. Our findings are in general agreement with Doniach's model describing the onset of magnetic ordering according to the relative values of the Kondo and exchange energy scales. Received 16 April 1998     

Transient response of hot electrons in narrow-gap semiconductors at low temperatures in the presence of a longitudinal quantizing magnetic field

Transient response of hot electrons in narrow-gap semiconductors to a step electric field in the presence of a longitudinal quantizing magnetic field has been studied at low temperatures using displaced Maxwellian distribution. The energy and momentum balance equations are used assuming acoustic phonon scattering via deformation potential responsible for the energy relaxation and elastic acoustic phonon scattering together with ionized impurity scattering for momentum relaxation. The calculations for the variation of drift velocity and electron temperature as functions of time are made for n-Hg_0.8Cd_0.2 Te in the extreme quantum limit at 1.5 K and 4.2 K. The momentum and energy relaxation times are found to be of the same order of magnitudes as with the experimental values. The magnetic field and lattice temperature dependences of the relaxation rates have been investigated.One of the authors, Suchandra Bhaumik, acknowledges the Council of Scientific and Industrial Research (New Delhi) for financial support.     

Theory on the magnetic properties of (TMTSF)2 X at ambient pressure

We propose a theoretical scheme which explains the temperature and magnetic field dependences of susceptibility of Bechgaard salt, (TMTSF)₂ X, based on the phase Hamiltonian for the itinerant electrons derived from the bosonization of the fermion field. Calculation is made from the viewpoint of the weak spin density wave of itinerant electrons. The result shows almost similar tendency to the experimental finding.A part of this work was reported at International Conference on Synthetic Low Dimensional Conductors and Superconductors LES ARCS (December 1982) by S. Iwabuchi and H. Fukuyama: J. Phys. (Paris) Colloq. C3 [Suppl. 6]44 (1983)     

Diffusion of electrons scattered by short-range impurities in a quantizing magnetic field

Formulas for transverse diffusion and conductivity in a semiconductor are obtained for electrons scattered by neutral impurities in a quantizing magnetic field. The formulas are valid for an impurity potential of arbitrary depth. Based on Kubo’s theory [1], calculations are performed using electron wavefunctions of the problem of single-impurity scattering in a magnetic field [2]. The poles of the scattering amplitude correctly determine electron eigenstates and magnetic impurity states. As a result, an exact expression is found for the dependence of transverse diffusion coefficient D _⊥ on longitudinal electron energy ? due to scattering by short-range (neutral) impurities. The behavior of D _⊥(?) is examined over an interval of magnetic field strength for several values of impurity potential depth. The experimental observability of diffusion and conductivity using IR lasers is discussed.     

Effect of cobalt impurity ions on the magnetic and electrical properties of iron monosilicide crystals

The results of experimental investigations of Fe_{1 − x} Co _x Si crystals in the impurity limit with x = 0.001, 0.005, and 0.01 are reported. The temperature and field dependences of the magnetic susceptibility have been studied. According to the experimental data, the introduction of cobalt impurity leads to a change in the energy structure, which is most pronounced in a change in the electrical properties. The temperature, field, and concentration dependences of the resistivity have been measured. The results have been interpreted in the framework of the Kondo model.     

Effect of the dielectric-constant mismatch and magnetic field on the binding energy of hydrogenic impurities in a spherical quantum dot

Within the effective mass approximation and variational method the effect of dielectric constant mismatch between the size-quantized semiconductor sphere, coating and surrounding environment on impurity binding energy in both the absence and presence of a magnetic field is considered. The dependences of the binding energy of a hydrogenic on-center impurity on the sphere and coating radii, alloy concentration, dielectric-constant mismatch, and magnetic field intensity are found for the GaAs–Ga_1−xAl_xAs–AlAs (or vacuum) system.     

Hierarchy of percolation thresholds and the mechanism for reduction of magnetic moments of transition metals intercalated into TiSe<Subscript>2</Subscript>

The concentration dependences of the effective magnetic moment of transition metal atoms intercalated into TiSe₂ are analyzed in the framework of the percolation theory. It is shown that, depending on the degree of localization of impurity states, the effective magnetic moment is determined by the overlap of 3d orbitals of transition metals or orbitals of titanium atoms coordinated by impurity atoms.     

Influence of correlations in a flat distribution of impurity ions on the mobility of two-dimensional electrons at low temperatures

The temperature dependences of the electrical resistivity of degenerate two-dimensional electrons in scattering by impurity ions in heterostructures with a spacer of arbitrary width have been investigated using the Al _x Ga_{1 ? x} As/GaAs heterostructure as an example. Correlations in the arrangement of impurity ions have been taken into account in the model of hard spheres on a plane.     

Temperature features of electrical resistivity of two-dimensional electrons in scattering by a correlated distribution of impurity ions in doped thin layers

Spatial correlations of impurity ions in doped thin layers at finite temperatures have been considered in the model of hard spheres on a plane. It has been shown that, in systems with separate doping, the correlations in the arrangement of impurity ions are weakened by thermal motion of electrons at sufficiently low temperatures (below the liquid-helium temperature). The temperature dependences of the electrical resistivity of degenerate two-dimensional electrons in heterostructures with separate doping have been investigated using the Al _x Ga_{1 − x} As/GaAs heterostructure as an example.     

Observation of magnetic breakdown in double quantum wells

We report on our studies of magnetic breakdown (MB) in coupled GaAs/Al_0.3Ga_0.7As double quantum wells (DQWs) subject to crossed magnetic fields. MB is a failure of semiclassical theory that occurs when a magnetic field causes electrons to tunnel across a gap ink-space from one Fermi surface (FS) branch to another. We study MB in a two-branch FS created by subjecting a DQW to an in-plane magnetic field (B_∥). The principal effect ofB_∥is a distortion in the dispersion curve of the system, yielding a FS consisting of two components, a lens-shaped inner orbit and an hour-glass-shaped outer orbit. The perpendicular field (B_⊥) causes Landau level formation and Shubnikov–de Haas (SdH) oscillations for each branch of the FS. At higher perpendicular fields MB occurs and electrons tunnel throughk-space from one FS orbit to the other. MB is observed by noting which peaks are present in the Fourier power spectrum of the magnetoresistance versus 1/B_⊥at constantB_∥. We observe MB in two DQW samples over a range ofB_∥.     

Anomalous magnetic properties of the complex (ET)2C60

Investigations of the temperature dependences of the magnetic permeability and dielectric permittivity in the temperature range 4.2 K⩽T ⩽300 K and the field dependence of the magnetization M(B) in fields B⩽50 T show that the magnetic properties of the complex (ET)₂C₆₀ cannot be described on the basis of the standard model, which assumes that the paramagnetic oxygen impurity makes the dominant contribution. It is found that the magnetism in (ET)₂C₆₀ is due to the diamagnetic properties of the C₆₀ and ET molecules and to specific paramagnetic centers of the type C ₆₀ ⁻ , which possess an anomalously low g factor |g|≈0.14. An experimentum crucis is proposed for checking the oxygen paramagnetic center model for pure C₆₀ films. Pis’ma Zh. éksp. Teor. Fiz. 69, No. 10, 733–738 (25 May 1999)     

Investigation of metamagnetic transitions in the itinerant d subsystem of the intermetallics RCo2 in superstrong magnetic fields up to 300 T

The time derivatives of the magnetization of intermetallic compounds RCo₂ (R = Y, Tm, Er, Ho, or Dy) with a metamagnetic subsystem of itinerant d electrons have been measured in pulsed magnetic fields up to 300 T generated by an explosive method. Peaks associated with abrupt demagnetization or magnetization of the d subsystem are found in the field dependences of dM/dH. The results obtained are compared with theoretical estimates and the values derived for the critical fields from measurements performed on substituted compounds. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 3, 188–192 (10 August 1996)     

Magnetization and magnetic circular dichroism of La0.7Sr0.3MnO3/YSZ polycrystalline films

The magnetic and magneto-optical properties as well as the surface morphology and structure of La_0.7Sr_0.3MnO₃ polycrystalline films of different thicknesses have been investigated. It has been shown that films have a rough surface with a characteristic in-plane linear dimension of ～30 nm, and crystallites with linear dimensions of 10–20 nm are randomly oriented in the plane. The temperature and field dependences of the magnetization of the films indicate their magnetic inhomogeneity. The magnetic circular dichroism spectra contain a number of bands, one of which at 2.4 eV is explained by the contribution of conduction electrons.     

Influence of the form of structure factor on the mobility of nondegenerate two-dimensional electrons

The temperature dependences of the mobility of nondegenerate two-dimensional electrons in scattering by a correlated distribution of impurity ions in Al _x Ga_{1 ? x} As/GaAs heterostructures have been investigated. The cases where the influence of the first maximum of the structure factor on the scattering of electrons begins to dominate with increasing temperature have been considered. It has been found that the mobility of two-dimensional electrons decreases with increasing correlations in the spatial distribution of impurity ions. The influence exerted by the correlations and the width of the spacer layer on this effect has been analyzed.     

Electrical conductivity and magnetic susceptibility of titanium monoxide

Conductivity and magnetic susceptibility of disordered cubic titanium monoxide TiO_y(0.920≤y≤1.262) are studied. Temperature dependences of the conductivity of TiO_y monoxides with y≤1.069 are described by the Bloch-Grüneisen function with Debye temperature 400–480 K, and temperature dependences of the susceptibility include Pauli paramagnetism of conduction electrons. The behavior of conductivity and susceptibility of TiO_y with y≥1.087 is typical of semiconductors with nondegenerate charge carriers obeying Boltzmann statistics. The band gap ΔE between the valence and conduction bands of TiO_y(y≥1.087) is 0.06–0.17 eV, and effective mass of charge carriers is equal to 7–14 electron masses.     

Mobility of nondegenerate two-dimensional electrons in scattering by a correlated distribution of impurity ions

The temperature dependences of the inverse mobility of nondegenerate two-dimensional electrons in scattering by impurity ions in heterostructures with a narrow spacer have been investigated using the Al _x Ga_{1 ? x} As/GaAs heterostructure as an example. Correlations in the arrangement of impurity ions have been taken into account in the model of hard spheres on a plane. The influence of the form of the structure factor in the electron mobility has been considered.     

Characteristic features of the extrinsic electric resistance in ferromagnets with low carrier density

Switching from simple semiconductors to more complicated chemical compositions, we encounter mainly nonstoichiometric or undoped compounds. Combined with other characteristic features of d(f) compounds, this can lead, together with the ordinary scattering by spin disorder in magnetic semiconductors, to an unusual impurity contribution to the total scattering of carriers even in intrinsic semiconductors. A unique scheme for calculating the energy structure of the conduction-band bottom of a ferromagnetic semiconductor and the temperature and field dependences of the impurity contribution to the resistivity is proposed on the basis of a model Hamiltonian. The computed magnetoresistance ratio is negative and has a maximum near T _c . A qualitative comparison is made between the results and the experimental temperature dependences of the Hall mobility and magnetoresistance ratio in the ternary semiconductor n-HgCr₂Se₄, which is nonstoichiometric with respect to the chalcogen. To identify previously unobserved temperature oscillations of the resistance, a careful analysis is made of the low-temperature part of the resistance using the relations obtained. Fiz. Tverd. Tela (St. Petersburg) 41, 68–76 (January 1999)     

The influence of imperfection of the crystal lattice on the electrokinetic and magnetic properties of disordered titanium monoxide

The conductivity and magnetic susceptibility of disordered titanium monoxide TiO_y (0.920≤y≤1.262) containing vacancies in titanium and oxygen sublattices are investigated. For TiO_y monoxides with an oxygen content y≤1.069, the temperature dependences of the conductivity are described by the Bloch-Grüneisen function at a Debye temperature ranging from 400 to 480 K and the temperature dependences of the magnetic susceptibility are characterized by the contribution from the Pauli paramagnetism due to conduction electrons. The behavior of the conductivity and magnetic susceptibility of TiO_y monoxides with an oxygen content y≥1.087 is characteristic of narrow-gap semiconductors with nondegenerate charge carriers governed by the Boltzmann statistics. The band gap ΔE between the valence and conduction bands of TiO_y monoxides with y≥1.087 falls in the range 0.06–0.17 eV.