Time-resolved and cw photoluminescence from strongly coupled organic microcavities

The optical properties of microcavities (MCs) are strongly dependent on both polarization of incident and emitted light and its angle of observation. Here we report the measurements of cw- and time-resolved photoluminescence (PL) observed at negative detuning and at resonance for s- and p-polarization in the strong coupling regime of a planar MC containing J-aggregates of a cyanine dye. Following non-resonant excitation, the emission spectra consist of three types of features: direct J-aggregate exciton emission, polariton emission, and uncoupled monomer emission through the transmission maxima of the distributed Bragg reflector beyond the stop-band. We compare our experimental results with a transfer-matrix calculation of the transmission for s- and p-polarization and explain the different positions of the polariton branches, the stop-band width, and the high- and low energy transmission maxima of the MC. Time-resolved PL experiments show an increase in the decay lifetime of the exciton-like mode when it is positioned far from the cavity mode. Close to resonance, the lower polariton branch decays with the natural lifetime of the J-aggregates.     

Polariton thermalization in GaN microcavities in the strong light–matter coupling regime

We discuss the thermalization of the polariton population from a bulk GaN λ/2 microcavity at room temperature. Simultaneous optical measurements of reflectivity and photoluminescence (PL), as well as time resolved measurements, reveal strong light–matter coupling. Transfer matrix theory is used to calculate reflectivity, absorption, and transmission coefficients for the structure. The PL emission is found to be thermalized, despite its very short lifetime, suggesting the existence of very fast energy relaxation channels.     

Dynamics of polaritons resonantly created at the upper polariton branch

We have studied the polariton relaxation dynamics in a CdTe microcavity at low temperatures after resonant excitation into the upper polariton branch (UPB). Initially, we have set a negative exciton–cavity detuning, such that the energy difference between the two polariton branches coincides with that of an LO phonon. Our experimental results reveal a sublinear dependence of the integrated emission from the lower polariton branch (LPB) with excitation power. This evidences not only an inefficient LO phonon mediated relaxation from the UPB to the LPB but also a substantial inhibition of polariton relaxation along the LPB. After that, we have progressively reduced the negative detuning, approaching the exciton–cavity resonance. Under these conditions it is possible to observe a nonlinear emission arising from K0 LPB-states similar to that observed after nonresonant excitation. Marked oscillations are present in the time evolution traces, with a period that does not depend on excitation power or detuning.     

Influence of optical confinement and excitonic absorption on strong coupling in a bulk GaN microcavity grown on silicon

We report the optical study of a lambda-thick GaN microcavity grown by molecular beam epitaxy on a silicon substrate. Angle-resolved reflectivity measurements evidence the strong coupling regime at room temperature on the half cavity (without the top mirror), but at low temperature, the high excitonic absorption quenches the optical cavity mode at the excitonic energies. On the whole microcavity, the improved quality factor leads to the observation of the polariton emission whatever the temperature. No bottleneck is observed at 70 K even at low pumping power and large negative detuning. The impact of the optical confinement and the excitonic absorption, studied through reflectivity measurements are accurately reproduced by the transfer-matrix formalism. The optimization of the design in this structure leads to a large Rabi splitting (52 meV) at room temperature.     

A polariton laser based on a bulk GaN microcavity

Simulations of polariton relaxation in a bulk GaN microcavity are performed by solving semi-classical Boltzmann equations. The structure which is considered is that of a recently grown microcavity showing strong coupling at 300 K. A kinetic phase diagram is calculated. We show that such a cavity can operate as a low-threshold polariton laser at room temperature.     

Bipolariton laser emission from a GaAs microcavity

Biexciton emission properties were studied in a single GaAs quantum well semiconductor planar microcavity by photoluminescence measurements at low temperatures. At high pump intensity a bipolariton emission appears close to the lower polariton mode. This new mode appears when we detune the cavity resonance out of the lower polariton branch, showing a laser-like behavior. Very small linewidths were measured, lying below 110 μeV and 150 μeV for polariton and bipolariton emission respectively. The input/output power (I/O) measurements show that the bipolariton emission has a weaker coupling efficiency compared to previous results for polariton emission. Varying the pump laser polarization, we were able to show the selection rules for the biexciton particle creation in the quantum well. Simultaneous photoluminescence and near-field measurements show that the polariton and bipolariton emission are spectrally and spatially separated.     

Emission dynamics of a GaAs microcavity with embedded quantum wells under intense nonresonant excitation

In a GaAs-based microcavity with embedded quantum wells, the dynamics of emission processes under high levels of nonresonant picosecond laser-pulse excitation is studied. For pump levels above the stimulation threshold, the kinetics of the intensity, spectral position, and linewidth of the emission are measured. Upon the arrival of an excitation pulse, the emission line shifts to higher energies over a time interval comparable to the time it takes for the emission intensity to attain its peak value, and then shifts in the opposite direction towards its position at low polariton densities. The width of the emission line is largest immediately after the excitation pulse and attains a minimum when the stimulated-emission intensity is maximum. It is shown that after the excitation pulse, the system is initially in a weak exciton-photon coupling regime, and a transition to a strong-coupling regime occurs with time.     

Dynamics of a parametric exciton-polariton oscillator in a microcavity

We study the dynamics of parametric oscillations of polaritons in a microcavity that consists of a periodic conversion of a pair of pump polaritons into polaritons of signal and idle modes and vice versa. The period and amplitude of oscillations considerably depend on the initial polariton density, the initial phase difference, and the resonance detuning. We show that there is a possibility of phase controlling the polariton dynamics in the microcavity.     

Strong light‐matter coupling between a molecular vibrational mode in a PMMA film and a low‐loss mid‐IR microcavity

Microcavity devices exhibiting strong light‐matter coupling in the mid‐infrared spectral range offer the potential to explore exciting open physical questions pertaining to energy transfer between heat and light and can lead to a new generation of efficient wavelength tunable mid‐infrared sources of coherent light based on polariton Bose‐Einstein Condensation. Vibrational transitions of organic molecules, which often have strong absorption peaks in the infrared and considerably narrower linewidths than organic excitonic resonances, can generate polaritonic states in the mid‐infrared spectral range using microcavity devices. Here, narrow linewidth polaritonic resonances are exhibited in the mid‐infrared by coupling the carbonyl stretch vibrational transition of a polymethyl methacrylate film to the photonic resonance of a low optical‐loss mid‐infrared microcavity, which consisted of two Ge/ZnS dielectric Bragg reflectors. Rabi‐splitting of 14.3 meV is observed, with a 4.4 meV polariton linewidth at anti‐crossing. The large Rabi‐splitting relative to linewidth indicates efficient impedance‐matching between the bare vibrational and photonic states, and suggests molecular‐vibration polaritons incorporated in dielectric microcavities can be an enabling step towards realizing polariton optical switching and polariton condensation in the mid‐infrared spectral range.     

Room temperature ultralow threshold GaN nanowire polariton laser

We report ultralow threshold polariton lasing from a single GaN nanowire strongly coupled to a large-area dielectric microcavity. The threshold carrier density is 3 orders of magnitude lower than that of photon lasing observed in the same device, and 2 orders of magnitude lower than any existing room-temperature polariton devices. Spectral, polarization, and coherence properties of the emission were measured to confirm polariton lasing.     

Visible light emission from Si/SiO2 superlattices in optical microcavities

Bright quantum confined luminescence due to band-to-band recombination can be obtained from Si/SiO₂ superlattices. Placing them in a one-dimensional optical microcavity results in a pronounced modulation of the photoluminescence (PL) intensity with emission wavelength, as a consequence of the standing wave set up between the substrate and top interfaces. For a Si substrate, absorption of light reduces the PL efficiency, but for an Al-coated glass substrate the PL intensity is twice that of a quartz substrate case. The addition of a broad-band high reflector to the superlattice surface results in enhanced narrow-band emission. These results show that a suitably designed planar microcavity can not only considerably increase the external efficiency of luminescence in Si/SiO₂ superlattices but can also be used to decrease the bandwidth and selectively tune the peak wavelength.     

Electrically injected cavity polaritons

We have realized an electroluminescent device operating in the light-matter strong-coupling regime based on a GaAs/AlGaAs quantum cascade structure embedded in a planar microcavity. At zero bias, reflectivity measurements show a polariton anticrossing between the intersubband transition and the cavity mode. Under electrical injection the spectral features of the emitted light change drastically, as electrons are resonantly injected in a reduced part of the polariton branches. Our experiments demonstrate that electrons can be selectively injected into polariton states up to room temperature.     

Lasing modes in a spiral-shaped dielectric microcavity

The resonance patterns and lasing modes in a spiral-shaped dielectric microcavity are investigated through passive and active medium calculations. We find that the high-Q resonance modes are whispering-gallery-like modes, and these resonance modes can be easily excited as lasing modes. We also find that the quasi-scarred resonance mode, which shows strong directional emission beams from the cavity boundary, can be excited with selectively applied external pumping. Through a spectral analysis of the time evolution of the light field, the competition between these lasing modes is discussed.     

Influence of the humidity conditions on the reflectivity spectrum of a porous silicon microcavity

We have designed and fabricated a porous silicon (PS) microcavity that shows a reflectivity resonance around 3 μm in between two spectral regions with high reflectivity values. The microcavity has been simulated following the photonic crystals formalism, which results in good agreement with the measured spectrum. The reflectivity spectrum of the microcavity has been analyzed under different humidity conditions. We demonstrate that the reflectivity resonance shifts to higher wavelengths and that the reflectivity decreases when the humidity increases. In addition, the reflectivity spectrum of the as-prepared device is recovered when the humidity returns to the initial laboratory conditions. Finally, the effect on the reflectivity spectrum of a condensed water layer at the surface of the microcavity is also analyzed.     

Formation of an exciton polariton condensate: thermodynamic versus kinetic regimes

We measure the polariton distribution function and the condensation threshold versus the photon-exciton detuning and the lattice temperature in a CdTe microcavity under nonresonant pumping. The results are reproduced by simulations using semiclassical Boltzmann equations. At negative detuning we find a kinetic condensation regime: the distribution is not thermal and the threshold is governed by the relaxation kinetics. At positive detuning, the distribution becomes thermal and the threshold is governed by the thermodynamic parameters of the system. Both regimes are a manifestation of polariton lasing, whereas only the latter is related to Bose-Einstein condensation defined as an equilibrium phase transition.     

Polariton parametric amplifier pump dynamics in the coherent regime

We studied the pump coherent dynamics in a II-VI microcavity parametric amplifier, using angle-resolved four-wave mixing. The polariton parametric amplification is found to result in a strong quenching and saturation of the pump coherence lifetime above the threshold. For the polariton scattering processes that remain below the amplification threshold, we find an angle-dependent collision broadening associated with the efficiency of the polariton scattering towards the excitonic reservoir.     

Probing microcavity polariton superfluidity through resonant Rayleigh scattering

We study the motion of a polariton fluid injected into a planar microcavity by a continuous wave laser. In the presence of static defects, the spectrum of the Bogoliubov-like excitations reflects onto the shape and intensity of the resonant Rayleigh scattering emission pattern in both momentum and real space. We find a superfluid regime in which the Rayleigh scattering ring in momentum space collapses as well as its normalized intensity. We show how collective excitation spectra having no analog in equilibrium systems can be observed by tuning the excitation angle and frequency.     

Phonon-induced polariton superlattices

We show that the coherent interaction between microcavity polaritons and externally stimulated acoustic phonons forms a tunable polariton superlattice with a folded energy dispersion determined by the phonon population and wavelength. Under high phonon concentration, the strong confinement of the optical and excitonic polariton components in the phonon potential creates weakly coupled polariton wires with a virtually flat energy dispersion.     

Morphological changes in porous silicon nanostructures: non-conventional photoluminescence shifts and correlation with optical absorption

In this paper, we show that the photoluminescence (PL) shifts of p-type porous silicon (PS) are mainly attributed to some morphological changes related to anodisation conditions. We discuss how differences in the stirring and nature of the electrolytic solution can lead to morphological changes of the PS layers. It has been found that when PS is formed in pure aqueous HF solution, it can exhibit a non-conventional and reproducible “porosity – PL peak relationship”. By correlating the PL spectral behaviour and PS morphology throughout a quantum-confinement model, we explain both conventional and non-conventional PL shifts. Correlation of PL and optical absorption (OA) shows that the PL peak energy and the optical absorption edge of PS exhibit the same trend with size effect. The spectral behaviour of OA with regard to that of PL is well analysed within the quantum-confinement model throughout the sizes and shapes of the nanocrystallites forming PS. The value of the effective band gap energy determined from the calculated lowest PL energy almost corresponds to that estimated from the optical absorption coefficient. These results suggest that the lowest radiative transition between the valence band and the conduction band corresponds to the largest luminescent wires, and that the radiative recombination process leading to the PL emission occurs in the c-Si crystallite core.     

Exciton localization behaviour in different well width undoped GaN/Al0.07Ga0.93N nanostructures

We report results from optical spectroscopy such as photoluminescence (PL) and time resolved photo-luminescence (TRPL) techniques from different well width MOCVD grown GaN/Al_0.07Ga_0.93N MQW samples. There is evidence of localization at low temperature in all samples. The decay time of all samples becomes non-exponential when the detection energy is increased with respect to the peak of the emission. Localization of carriers (excitons) is demonstrated by the “S-shape” dependences of the PL peak energies on the temperature. The time-resolved PL spectra of the 3-nm well multi quantum wells reveal that the spectral peak position shifts toward lower energies as the decay time increases and becomes red-shifted at longer decay times. There is a gradient in the PL decay time across the emission peak profile, so that the PL process at low temperatures is a free electron-localized hole transition.