Effect of higher order nonlinear optical processes on optical absorption in the photorefractive BSO and BGO crystals

The processes of nonlinear refraction and nonlinear absorption are studied in the photorefractive Bi₁₂SiO₂₀ (BSO) and Bi₁₂GeO₂₀ (BGO) crystals at a wavelength of a picosecond Nd:YAG laser of 1064 nm. The nonlinear refraction in the crystals is shown to be related to the Kerr effect, and the nonlinear absorption at this wavelength, to three-photon absorption. The three-photon absorption coefficients of the BSO and BGO crystals are equal, respectively, to (2.5±0.8) ×10^?20 and (4.4±1.3) ×10^?20 cm³W^?2.     

Diffraction efficiency and energy transfer in two-wave mixing experiments with Bi12SiO20 crystals

The diffraction efficiency and energy transfer are investigated in photorefractive Bi₁₂SiO₂₀ crystals (BSO). Dependence on fringe spacing, electric fields, light intensity and rise-time constants are reported. The optimum crystallographic orientation for each effect is determined for vertical polarization of the recording beams. It is shown that beam coupling is a very sensitive phenomenon in BSO crystals where charge transport lengths are equivalent to usual fringe spacings. Experimental results are interpreted on the basis of the nonlinear theory of self-diffraction developed by Kukhtarev et al. [10].     

Electrically active defects in BiSiO crystals undoped and doped with Cr and Mn ions

The influence of doping of Bi₁₂SiO₂₀ (BSO) with chromium and manganese ions on the thermal depolarization currents (TDCs) is investigated. Measurements are performed in the temperature interval 300–800 K as the preliminary polarization temperature is varied in the range T _p=300–523 K. It is shown that doping significantly alters the structure of the TDC spectra. The Cr and Mn ions produce a set of new peaks over the entire investigated temperature range. The thermal activation energies are 0.85–1.98 eV (BSO:Cr) and 0.58–1.72 eV (BSO:Mn). Another consequence of doping is an increase in the amplitudes of the peaks and the charge accumulated during preliminary polarization. Fiz. Tverd. Tela (St. Petersburg) 40, 472–474 (March 1998)     

Three-Photon Absorption in Photorefractive BSO and BGO Crystals

The possibility of optical limitation of picosecond laser radiation in photorefractive Bi₁₂SiO₂₀ (BSO) and Bi₁₂GeO₂₀ (BGO) crystals at a wavelength of 1064 nm has been demonstrated. It is shown that the mechanism determining the process of optical limitation is three-photon absorption. The coefficients of three-photon absorption have been determined by the Z-scanning method.     

Thermooptic investigation of impurity centers in Cu-doped Bi12SiO20 crystals

Temperature dependences of the optical absorption of BSO:Cu crystals were investigated at photon energies between 1.36 and 3.46 eV and temperatures between 85 and 700 K. These dependences are analyzed for the energy model of a partially compensated p-type semiconductor taking into account the temperature dependence of the concentration of shallow and deep ionized acceptors. Fiz. Tverd. Tela (St. Petersburg) 40, 1246–1251 (July 1998)     

Dispersion of electro-optic coefficients in sillenite crystals

The photorefractive crystals of the sillenite family (Bi₁₂SiO₂₀ or BSO, Bi₁₂GeO₂₀ or BGO, and Bi₁₂TiO₂₀ or BTO) that belong to the cubic 23 point group are optically active, and exhibit the piezoelectric, elasto-optic, electro-optic and electrogyration effect. In this paper we measure the dispersion of the electro-optic coefficient for all the crystals of the sillenite family in the visible spectral range (500–800 nm). For this we measure by ellipsometry the polarization properties of a beam transmitted in the transverse configuration under the action of an externally applied field. The experimental data are fitted with an analytical expression of the beam polarization to find the electro-optic coefficient. The results show a normal dispersion of the electro-optic coefficient in all three sillenite crystals, similarly to other electro-optic crystals.     

Feedback controlled periodic states for different kinds of photorefractive nonlinear response

We investigate analytically and numerically the influence of the type of the photorefractive nonlinear response on the periodic states (attractors) which occur during feedback controlled 2W-coupling and correspond to almost 100% diffraction efficiency of the dynamic index grating. In addition to the case of the local response typical, for example, for LiNbO₃ crystals we consider the cases of nonlocal (diffusive) response (BaTiO₃, SBN) and resonant response (DC-biased BSO, BTO, and BGO crystals). It is shown that the conditions for the transition to the periodic states and their apparent characteristics are strongly different for the two limiting cases above. Received 16 July 2002 / Received in final form 29 October 2002 Published online 4 March 2003     

Structural investigation of the BaSnO3–YBa2Cu3O7−x system

We report the microstructure change of BaSnO₃ (BSO)–YBa₂Cu₃O_7−x (YBCO) thin film system grown on SrTiO₃ single crystal substrates by pulsed laser deposition with using the “surface-modified-target” and “mixture-target” methods. Although it was confirmed that the thick BSO nanorods incorporated to YBCO films act as strong artificial pinning centers, the formation mechanism of the nanorods is still unclear. The purpose of this work is to extend the structural investigation to higher contents of BSO (up to 71 vol.%) in order to enlighten the relationship among interfacial energy, morphology and pinning performance in binary BSO–YBCO films.     

Comparison study of energy bands and Wannier-Mott excitons in mixed Zn(P As ) and Zn Cd P crystals

Excitonic absorption, reflection and photoluminescence spectra of mixed Zn(P_1-xAs_x)₂ crystals over the full range of x ( 0 ? x ? 1) and Zn_1-xCd_xP₂ crystals at 0 ? x ? 0.05 have been studied at low temperatures (1.8 K). The decrease of the energy gap in Zn(P_1-xAs_x)₂ at the increase of x occurs slightly sublinearly. The rydbergs of excitonic series in this crystals decrease as well, and the dependences Ry ( x ) for all series are strongly superlinear at small x. In Zn_1-xCd_xP₂ crystals the energy gap and rydbergs decrease at the increase of x (at 0 ? x ? 0.05) as well. The dependences of E_g and Ry on x are considerably stronger in Zn(P_1-xAs_x)₂ than in Zn_1-xCd_xP₂. At the increase of x the half-width of excitonic absorption lines increases monotonically in both type crystals that is evidence of the increasing role of fluctuations of crystal potential. Received 13 March 2002 Published online 9 July 2002     

Study of crystals in medium-and long-wavelength IR ranges by surface-electromagnetic-wave spectroscopy

First observation of excitation of surface electromagnetic waves (SEW) is reported in the reststrahlen region in for biaxial crystal KTiOPO₄ (KTP) using a tunable CO₂ laser around 10 μm, and for CaF₂, BaF₂, MgO (cubic crystals), and LiNbO₃ (uniaxial crystal) in the far IR using ith a free-electron laser. The parameters of SEW propagation in these crystals have been obtained by the interference method of SEW phase spectroscopy, and the possibility of determining the complex dielectric permittivity of crystals from the SEW propagation parameters demonstrated in the range of SEW existence. Fiz. Tverd. Tela (St. Petersburg) 40, 237–241 (February 1998)     

The epitaxial growth of BaSnO3 buffer layer on IBAD-MgO template and its effects on GdBa2Cu3O7−δ film: A preliminary study

We report a successful fabrication of c-axis oriented GdBa₂Cu₃O_7−δ (GdBCO) films on the BaSnO₃ (BSO) buffer layers on ion-beam assisted deposition (IBAD)-MgO template by pulsed-laser deposition (PLD). The (0 0 l) growth and in-plane textures of BSO buffer layers were found sensitive to the substrate temperature (T_s). With increasing the BSO layer thickness up to ∼165 nm, in-plane texture (Δ? ∼ 6.2°) of BSO layers was almost unaltered while completely c-axis oriented BSO layers were obtainable from samples with the thickness below ∼45 nm. On the BSO buffer layers showing in-plane texture of 6.2° and RMS surface roughness of ∼8.6 nm, GdBCO films were deposited at 780–800 °C. All GdBCO films exhibited Δ? values of 4.6–4.7°, T_c,zero of ∼91 K, and critical current density (J_c) over 1 MA/cm² at 77 K in a self-field. The highest J_c value of 1.82 MA/cm² (I_c of 51 A/cm-width) was achieved from the GdBCO film deposited at T_s of 790 °C. These results support that BSO can be a promising buffer layer on the IBAD-MgO template for obtaining high-J_c GdBCO coated conductors.     

EPR and optical properties of KYb(WO4)2 and KTb0.2Yb0.8(WO4)2 single crystals

Well oriented KYb(WO₄)₂ and KTb_0.2Yb_0.8(WO₄)₂ single crystals have been investigated for their magnetic and optical properties using the Raman and EPR techniques. The registered EPR signal is dominated by three lines ascribed to ytterbium ions: one main and two satellites. Tb ions, although non-paramagnetic, distinctly modify magnetic properties of the KYb(WO₄)₂ single crystal. Basic parameters of the spin Hamiltonian, including Zeeman and hyperfine terms (g and A matrices) as well the spatial orientation between principal and crystallographic axes systems were determined for both crystals.     

Random anisotropy in R2CuO4 (R=Nd, Pr, Sm, Gd, Eu) quasi-2D antiferromagnets

The mechanisms of random anisotropy produced by an an effective coupling between rare-earth ion moments and orbital momenta of Cu₂₊ ions through spin fluctuations is studied in R₂CuO₄ crystals. The effective random-anisotropy fields are estimated from an analysis of experimental data for R₂CuO₄ crystals (R=Eu, Pr, Gd). Fiz. Tverd. Tela (St. Petersburg) 41, 1259–1263 (July 1999)     

Band gaps and charge distribution in quasi-binary (GaSb) (InAs) crystals

Pseudopotential investigation of energy band gaps and charge distribution in quasi-binary (GaSb)_1-x(InAs)_x crystals has been reported. To the best of our knowledge, there had been no reported theoretical work on these materials. In agreement with experiment, the quasi-binary crystals of interest showed a significant narrowing of the optical band gap compared to the conventional Ga_xIn_1-xAs_ySb_1-y quaternary alloys (with x = 1 - y). Moreover, the absorption at the optical gaps indicated that (GaSb)_1-x(InAs)_x is a direct Γ to Γ band-gap semiconductor within a whole range of the x composition. The information derived from the present study predicts that the band gaps cross very important technological spectral regions and could be useful for thermophotovoltaic applications. Received 30 August 2002 Published online 1st April 2003 RID="a" ID="a"Present address: Physics Department, University of M'sila, 28000 M'sila, Algeria e-mail: N_Bouarissa@yahoo.fr     

Existence of an incommensurate phase in a Li2B4O7 crystal

The x-ray diffraction spectra of Li₂B₄O₇ single crystals are investigated in the temperature range 80–300 K, and the lattice parameter c is determined in the same temperature range in the presence of a periodically varying temperature field. An incommensurate phase is not observed anywhere in the temperature range investigated, regardless of whether the crystals are subjected to a periodic temperature field. Fiz. Tverd. Tela (St. Petersburg) 39, 1461–1463 (August 1997)     

Effect of lead doping in the system Bi-Sr-Ca-Cu-O on the formation of 2212 crystals, grown from a KCl flux using pre-synthesized compounds (precursors)

A combination of the solution-melt method and solid-phase synthesis of complex oxides has been used to obtain crystals of Bi₂Sr₂CaCu₂O₈ (2212). Partial substitution of bismuth by lead leads to a change in the orientation of the growth layers in the (001) plane of the 2212 crystal which has an orthorhombic lattice. An increase in the dimensions is noted along with an enhancement of the quality of the crystals when lead is introduced into the composition of the precursors. Fiz. Tverd. Tela (St. Petersburg) 39, 219–221 (February 1997)     

Drift mobility of photogenerated current carriers in Bi12GeO20 crystals

The drift mobility of photogenerated electrons and holes in Bi₁₂GeO₂₀ crystals with different degrees of doping is investigated experimentally. Fiz. Tverd. Tela (St. Petersburg) 40, 2054–2055 (November 1998)     

Photoinduced transformation of luminescence centers in C60 crystals at high pressure

The influence of laser irradiation on the photoluminescence spectra of perfect C₆₀ crystals in the orientationally disordered phase is investigated. It is shown that irradiation of the crystals with low-power light for short durations at T=200 K produces radical changes in the luminescence spectrum. The pressure dependences of the spectral bands of the phototransformed and initial (without irradiation) spectra differ significantly, indicating a photoinduced structural transformation of the X centers responsible for the luminescence of C₆₀. The phototransformed C₆₀ crystals are stable against further exposure to light irradiation and pressure. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 12, 784–788 (25 December 1999) Deceased.     

Visualization of a Phase Object by Two-Wave Coupling in a Photorefractive Bismuth Silicon Oxide Crystal

We propose a method to visualize a phase object using a locally-controllable image amplification scheme we developed earlier which is based on two-wave coupling in a bismuth silicon oxide (Bi₁₂SiO₂₀, or BSO) crystal. In this method the BSO crystal is used as a phase plate in the configuration of Zernike’s phase contrast imaging system. The principle of the phase-visualization with two-wave coupling is presented. An experimental result to verify the proposed method is shown.     

Electronic structure of deep centers in LiNbO3

A model is proposed for photo-and thermally induced processes in lithium niobate crystals. The model is based on the presence of structural defects formed as a result of departure of the crystal composition from stoichiometry. Defects of the type Nb_Li-Nb_Li are introduced and the influence of oxidation-reduction heat treatment on the optical characteristics of the crystals is analyzed. Fiz. Tverd. Tela (St. Petersburg) 40, 1109–1116 (June 1998)