Exciton spectra and electrical conductivity of epitaxial silicon-doped GaN layers

Optical spectra and electrical conductivity of silicon-doped epitaxial gallium nitride layers with uncompensated donor concentrations N _D — N _A up to 4.8 × 10¹⁹ cm^?3 at T ≈ 5 K have been studied. As follows from the current-voltage characteristics, at a doping level of ～3 × 10¹⁸ cm^?3 an impurity band is formed and an increase of donor concentration by one more order of magnitude leads to the merging of the impurity band with the conduction band. The transformation of exciton reflection spectra suggests that the formation of the impurity band triggers effective exciton screening at low temperatures. In a sample with N _D — N _A = 3.4 × 10¹⁸ cm^?3, luminescence spectra are still produced by radiation of free and bound excitons. In a sample with N _D — N _A = 4.8 × 10¹⁹ cm^?3, Coulomb interaction is already completely suppressed, with the luminescence spectrum consisting of bands deriving from impurity-band-valence band and conduction-band-valence band radiative transitions.     

Electrical properties of n-type vapor-grown gallium nitride

Hall measurements are reported for undoped and Zn-doped vapor-grown single crystal GaN on (0001) Al₂O₃ layers with 298 K carrier concentrations (n-type) between 1·4×10¹⁷cm^?3 and 9×10¹⁹ cm^?3. Then n～10¹⁷ cm^?3 crystals (undoped) have mobilities up to μ～440 cm²/V sec at 298 K. Their conduction behavior can be described by a two-donor model between 150 and 1225 K and by impurity band transport below 150 K. Crystals with n≥8×10¹⁸ cm^?3 show metallic conduction with no appreciable variation in n or μ between 10 and 298 K.Results of mass spectrographic analyses indicate that the total level of impurities detected is too low to account for the observed electron concentration at the n～10¹⁹ cm^?3 level, and suggest the presence of a high concentration of native donors in these crystals. No significant reduction in carrier concentration was achieved with Zn doping up to concentrations of ～10²⁰ cm^?3 under the growth conditions of the present work, and no evidence was found to indicate that high conductivity p-type behavior may be achieved in GaN. The influence of factors such as growth rate, crystalline perfection and vapor phase composition during growth on the properties of the layers is described.     

Pressure dependence of the absorption edge for Cd1-xMnxTe

The effect of pressure on the optical absorption edge of mixed crystals Cd_1-xMn_xTe with different manganese concentrations is reported. The observed absorption edge shifts to higher energy with increasing pressure at a rate of α=7?8×10^?3 eV/kbar and a second order coefficient of β=-4×10^?5 eV/kbar² for x<0.5, to lower energy with increasing pressure at a rate of α=-5.0 ×10^?3 eV/kbar for x?0.5. A phase transition occurs for all the samples studied. The absorption edge of the new phase is outside the wavenumber range of the instrument. The physical origins of different pressure coefficients are discussed in the light of the deformation potentials of energy band states and the hybridization of the Mn²⁺ 3d levels with the p-like states in the valence band.     

The high-resolution infrared spectrum of the ν11 band of allene-d4

The infrared band ν₁₁ around 300 cm^?1 of allene-d₄ has been studied at a resolution of 0.010 cm^?1. The J structure in the central Q branches of this perpendicular band was resolved and P- and R-lines were assigned to subbands with {K″} ≦ 18. A ground-state analysis resulted in B₀ = 0.232187(30) cm^?1, D₀^J = 6.3(1.0) × 10^?8cm^?1, and D₀^JK = 3.0(4) × 10^?6cm^?1. Upper-state constants including η₁₁^J and η₁₁^K were derived. Special attention was paid to the study of l-type doublings. Doublets due to q^(?)-doubling were resolved and accordingly the value q₁₁^(?) = ?0.000160(3) cm^?1 was derived. The more usual q⁽⁺⁾-doubling was also observed, and the result q₁₁⁽⁺⁾ = 0.000144(4) cm^?1 was obtained.     

Rotational study and hyperfine effects of the (0,0) band of the B2Σ-X2Σ system of ScS

Rotational analysis of the (0,0) band of the B²Σ-X²Σ transition of ScS is reported. Spectrographic illustration of a hyperfine coupling transition in the ground state is demonstrated for the first time. This enables an order of magnitude to be obtained for γ″ (～0.003 cm^?1). The results for the other constants were: X state: B″ = 0.1971 cm^?1, D″ = 5 × 10^?8cm^?1, 4b = 0.23 cm^?1 (equal to that for ScO within the limits of measurement uncertainty); B state: B′ = 0.1853 cm^?1, D′ = 6 × 10^?8cm^?1, γ′ = ?0.0594 cm^?1, which can be compared with p_A²Π = 0.060 cm^?1. It was found that the two excited states A²Π and B²Σ constitute an excellent example of pure precession (p_pp = 0.058 cm^?1, and this enables the vibrational levels of A²Π to be numbered.     

Analysis of the 2ν3 band of 12CD3F at 5.06 μm recorded under high resolution

The 2ν₃(A₁) band of ¹²CD₃F near 5.06 μm has been recorded with a resolution of 20–24 × 10^?3 cm^?1. The value of the parameter (α^B ? α^A) for this band was found to be very small and, therefore, the K structure of the R(J) and P(J) manifolds was unresolved for J < 15 and only partially resolved for larger J values. The band was analyzed using standard techniques and values for the following constants determined: ν₀ = 1977.178(3) cm^?1, B″ = 0.68216(9) cm^?1, D″_J = 1.10(30) × 10^?6 cm^?1, α^B = (B″ ? B′) = 3.086(7) × 10^?3 cm^?1, and β^J = (D″_J ? D′_J) = ?3.24(11) × 10^?7 cm^?1. A value of α^A = (A″ ? A′) = 2.90(5) × 10^?3 cm^?1 has been obtained through band contour simulations of the R(J) and P(J) multiplets.     

Infrared rotation-vibration spectra of ethane: The perpendicular band, ν7, of C2H6

The study of the gas-phase infrared spectrum of C₂H₆ in the region of the perpendicular CH-stretching band, ν₇, near 3000 cm^?1 is extended for the ΔK = + 1 subbands as far as K = 20. The spectral resolution of ～0.030 cm^?1 is increased to ～0.015 cm^?1 by deconvolution. The earlier investigation of this band for KΔK = +9 to ?5, is repeated with greater accuracy, providing more reliable ground-state constants (cm^?1): B₀ = 0.663089 ± 24, D₀^J = (0.108 ± 4) × 10^?5, D₀^JK = (0.50 ± 7) × 10^?5. The molecular constants (cm^?1) for the ν₇ fundamental are B₇ = 0.66310 ± 3, A₇ = 2.682, ν₀ = 2985.39, ζ₇ = 0.128. A discussion of resonance effects in this band, in particular x-y-Coriolis and Fermi resonance, is given.     

Ethane spectrum between 1940 and 2152 cm−1: Ground state parameters

The absorption spectrum of ethane was recorded between 1940 and 2152 cm^?1 at a resolution of 0.025 cm^?1. Ground state parameters were determined from the principal band in this region, ν₉ + ν₁₂(E_u): B₀ = 0.6630353 cm^?1, D₀^J = 1.0406 × 10^?6 cm^?1, D₀^JK = 2.575 × 10^?6 cm^?1 (standard errors are 7, 8, and 13, respectively, in the last digits quoted). The quoted values are from the analyses of 269 ground state combination differences, the standard deviation of the least-squares analysis was 0.0032 cm^?1.     

Investigation of 4H-SiC epitaxial layers implanted by Al ions

4H-SiC epitaxial layers 26 μm thick with N _d ?N _a = 1 × 10¹⁵ cm^?3 grown by the CVD method on 4H-SiC commercial wafers were implanted by Al ions with energy of 100 keV and a dose of 5 × 10¹⁶ cm^?2. To produce the p ⁺?n junction, a rapid thermal annealing for 15 s at 1700°C was used. The obtained samples were studied by the local cathodoluminescence, X-ray diffractometry, and transmission electron microscopy. It was established that under specified conditions of implantation, the width of a region with a high content of radiation defects exceeded by two orders of magnitude, the depth of the projective range of Al ions and was equal to 40 μm. This result is explained by the combined contribution of the radiation enhanced defect diffusion and long-range action effect. A short-term high-temperature annealing resulted in the recrystallization of the specimen surface layer and enhancement of CVD layer structure.     

Effect of uniaxial stress on InSbtunnel junctions

The deformation potential constants of heavily doped InSb have been determined by applying uniaxial stress to p-n tunnel junctions formed below the surface of rectangular InSb bars. Stress applied parallel to the major axes of these bars and parallel to the junction plane resulted in a linear decrease in tunnel current as a function of stress. The percentage decreases were 24·5 × 10^?3, 9·5 × 10^?3 and 4·5 × 10^?3cm²kg^?1 for stress applied parallel to [010], [11¯0], and [111] directions respectively. The observed changes in tunnel currents are attributed to a decrease in the tunnel probability produced by a shift in the conduction band edge relative to that of the valence band. Our data is consistent with a hydrostatic deformation potential of — 10 eV, and valence band deformation potentials b = ? 1·3 eV and d = ?7·4 eV.     

A high-resolution study of the 14.4-μm infrared band of deuterofluoroform

The FT-IR spectrum of the ν₃ parallel band of deuterofluoroform has been recorded at a resolution of 0.0045 cm^?1. Nine independent spectral parameters were determined which reproduce some 650 observed wavenumbers with a standard error of 3 × 10^?4 cm^?1. The constants derived for the ν₃ band are (in cm^?1): ν₀ = 694.2822(3); B₀ = 0.3309321(9); B₃ = 0.3302464(11); α^B = 6.859(10) × 10^?4; α^C = 1.429 × 10^?4; D₃^J = 3.168(3) × 10^?7; D₀^J = 3.188(3) × 10^?7; D_JK³ = 4.766 × 10^?7; D_JK⁰ = 4.864 × 10^?7; and D_K⁰ ? D_K³ = 2 × 10^?10.     

Tunable laser study of the ν10 + ν11 band of cyclopropane

Diode laser measurements of the ν₁₀ + ν₁₁ (l_tot = ±2) perpendicular band of cyclopropane have led to the assignments of roughly 600 lines in the 1880–1920-cm^?1 region. Most of the spectra were recorded and stored in digital form using a rapid-scan mode of operating the laser. These spectra were calibrated, with the aid of a computer, by reference to the R lines of the ν₁ + ν₂ band of N₂O. The ground state constants we obtained are (in cm^?1) B = 0.670240 ± 2.4 × 10^?5, D_J = (1.090 ± 0.054) × 10^?6, D_JK = (?1.29 ± 0.19) × 10^?6, D_K = (0.2 ± 1.1) × 10^?6. The excited state levels are perturbed at large J values, presumably by Coriolis couplings between the active E′(l_tot = ±2) and the inactive A′(l_tot = 0) states. Effective values for the excited state constants were obtained by considering only the J < 15 levels. The A₁-A₂ splittings in the K′ = 1 excited states were observed to vary as q_effJ(J + 1), with q_eff = (2.17 ± 0.17) × 10^?4 cm^?1.     

Vibration-rotation spectra of ethane and deuteroethanes: The ν2 band of CH3CD3

The ν₂ band of CH₃CD₃ has been measured under an effective resolution of 0.04 cm^?1. About 400 transitions observed in the region from 2130 to 2060 cm^?1 have been identified as due to the ν₂ fundamental band. The least-squares analysis of these transitions yields the band constants: ν₀ = 2089.957, B′ = 0.548937, D_J′ = 6.97 × 10^?7, D_JK′ = 1.92 × 10^?6, A′ - A″ = ?0.01158, and D_K′ - D_K″ = 1.30 × 10^?6 cm^?1. The ground-state constants B″, D_J″, and D_JK″ are fixed to the values obtained from microwave spectroscopy.     

Analysis of the ν6(A″2) band of cyclopropane-d6 recorded under high resolution

The parallel band ν₆(A″₂) of C₃D₆ near 2336 cm^?1 has been studied with high resolution (Δν = 0.020 – 0.024 cm^?1) in the infrared. The band has been analyzed using standard techniques and the following parameters have been determined: B″ = 0.461388(20) cm^?1, D″_J = 3.83(17) × 10^?7 cm^?1, ν₀ = 2336.764(2) cm^?1, α^B = (B″ ? B′) = 8.823(12) × 10^?4 cm^?1, β^J = (D″_J ? D′_J) = 0, and α^C = (C″ ? C′) = 4.5(5) × 10^?4 cm^?1.     

The CC stretching band ν6 of allene-d4

The infrared spectrum of C₃D₄ was measured in the region of the paralled band of the CC stretching vibration ν₆ centered at ν₀ = 1920.2332 cm^?1 on a high-resolution Fourier transform spectrometer and deconvolved to a linewidth of $\text{～}\text{1}\text{2}$ of the Doppler width (～0.0023 cm^?1). The high resolution reveals the presence of strong perturbations in the K = 4 and K = 8 to 12 levels of the ν₆ upper state. For a quantitative treatment of the observed transitions, a Hamiltonian matrix including six different perturbing states was constructed and used to refine the 6 spectroscopic constants of the ν₆ state and 20 of the constants for the perturbing states. Measurement of the hot band ν₆ + ν₁₁ ? ν₁₁ whose band center is at 1916.200 cm^?1 yielded the anharmonic constant x_6,11 = ?4.033 cm^?1.     

Diode laser measurements of intensities,N2-broadening,and self-broadening coefficients of lines of the ν2 band of 14N16O2

A diode laser spectrometer (resolution 0.0013 cm^?1) was used to record, in the 12-μm region, high-quality spectra of the ν₂ band of NO₂. Using these spectra, it was possible to obtain the N₂-broadening coefficients and an average self-broadening coefficient from measurements made for seven lines of this band. In addition, 30 single spin-component line intensities were measured. From them, through a least-squares fit, the purely vibrational transition moment of the ν₂ band, as well as two correcting rotational terms involved in the expansion of the transition moment operator, were obtained. These results led to the determination of the dipole moment derivative $\text{?μ}{}_{\mathrm{x}}\text{?q}{}_2\text{= ?0.0604}{}_1\text{± 0.0037}\text{D}$. It was also demonstrated that there is good consistency between the correcting terms deduced from the observed intensities and their theoretical estimates. Finally, a complete spectrum of the ν₂ band of NO₂ was computed, providing a total band intensity S_v(ν₂) = 0.542 × 10^?18cm^?1/molecule cm^?2 at 296 K.     

Quantum properties of strong accumulation layers on ZnO surfaces

Extremely strong accumulation layers with surface electron densities ΔN approaching 10¹⁴ cm^?1 have been achieved on ZnO surfaces in contact with an electrolyte. Quantization effects, which are very pronounced in such narrow (?10 Å) layers, are studied by measurements of ΔN versus surface barrier height V_s. Comparison of the results with self-consistent calculations shows very good agreement up to ΔN = 2 × 10¹³ cm^?2. Deviations observed at higher ΔN are probably associated with the huge electric fields (～10⁷ V/cm) experienced by the surface electrons.     

Dark-current relaxation in EuGa2S4 single crystals

The results of the investigation of dark-current relaxation in EuGa₂S₄ single crystals are reported. The depth and concentration of the traps are found to be E_t = 0.79 eV and N_t = 1.64 × 10¹⁴ cm^?3, respectively.The charge accumulation region (d_c = 3.3 × 10^?5 cm) and contact capacitance (C_c = 1.23 × 10^?10 F) are also estimated.     

γ辐照室温短波HgCdTe光伏器件的导纳谱研究

利用变频导纳谱研究了γ辐照前后Hg_1－xCd_xTe(x=0.6)n⁺-on-p结中的深能级缺陷．辐照前其缺陷能级位置在价带上0.15 eV,俘获截面σ_p＝2.9×10^-18cm²,缺陷密度N_t＝6.5×10¹⁵cm^-3,初步认为是Hg空位或与其相关的复合缺陷;经过10⁴Gy的γ辐照后其能级变得更深,在价带上0.19 eV,同时其俘获截面增加了近一个数量级,而缺陷密度基本上没有变化．γ辐照引入的这种能级变化最终使器件的性能(探测率)下降了1/2以上． 关键词：     

Polycrystalline GaSb films prepared by the coevaporation technique

Gallium antimonide (GaSb) films were deposited onto fused silica and n-Si (100) substrates by coevaporating Ga and Sb from appropriate evaporation sources. The films were polycrystalline in nature. The size and the shape of the grains varied with the change in the substrate temperature during deposition. The average surface roughness of the films was estimated to be 10 nm. Grain boundary trap states varied between 2×10¹² and 2.2×10¹² cm^?2 while barrier height at the grain boundaries varied between 0.09 eV and 0.10 eV for films deposited at higher temperatures. Stress in the films decreased for films deposited at higher temperatures. XPS studies indicated two strong peaks located at ～543 eV and ～1121 eV for Sb 3d_3/2 and Ga 2p_3/2 core-level spectra, respectively. The PL spectra measured at 300 K was dominated by a strong peak located ～0.55 eV followed by two low intensity peaks ～0.63 eV and 0.67 eV. A typical n-Si/GaSb photovoltaic cell fabricated here indicated V _oc～311 mV and J～29.45 mA/cm², the density of donors (N _d)～3.87×10¹⁵ cm^?3, built in potential (V _bi)～0.48 V and carrier life time (τ)～28.5 ms. Impedance spectroscopy measurements indicated a dielectric relaxation time ～100 μs.