Spatial correlation of an electron and hole in quasi-two-dimensional electronic system in a strong magnetic field and its relationship to the light-scattering tensor

The spatial correlation of light-generated electrons and holes in a quasi-two-dimensional electron gas in a strong magnetic field is investigated in an approximation linear in the intensity of the exciting light. The correlation is due to the interaction of the electrons and holes with longitudinal optical (LO) phonons. The theory permits calculating, on the basis of a special diagrammatic technique, two distribution functions of an electron-hole pair with respect to the distance between the electron and the hole after the emission of N phonons: first, the function determining the total number of pairs which have emitted N phonons and, second, the function related to the rank-4 light-scattering tensor in interband resonance Raman scattering of light. A special feature of the system is that the electron and hole energy levels are discrete. The calculation is performed for a square quantum well with infinitely high barriers. The distribution function and the total number of electron-hole pairs before the emission of phonons as well as the distribution function corresponding to two-phonon resonance Raman scattering are calculated. The theory predicts the appearance of several close-lying peaks in the excitation spectrum under resonance conditions. The number of peaks is related to the number of the Landau level participating in the optical transition. The distance between peaks is determined by the electron-phonon coupling constant. Far from resonance there is one peak, which is much weaker than the peaks obtained under resonance conditions. Zh. éksp. Teor. Fiz. 111, 2194–2214 (June 1997)     

System of quantum wells in a parallel magnetic field

The energy spectrum and quantum states of electrons in a system of quantum wells in a strong magnetic field parallel to the heterogeneous boundaries are studied. The combined effect of the quantizing magnetic field and the potential of the system of quantum wells leads to a radical change in the electron dispersion relation owing to the appearance of one-dimensional Landau bands. The neighborhoods of the anticrossing points of the different bands correspond to an effective redistribution of the electron envelope functions, which becomes stronger as the magnetic field is raised. The character of the electron-state density in the size-quantization subbands is examined qualitatively in connection with the change in the system of isoenergy contours when a magnetic field is applied. Fiz. Tverd. Tela (St. Petersburg) 40, 1719–1723 (September 1998)     

Combined polaron states in magnetooptical effects in a quantum well

Combined polaron states in a rectangular quantum well in a strong magnetic field perpendicular to the well plane are discussed. These states are due to interaction between two discrete electron levels with different Landau quantum numbers (n and n ₁) and different size-quantization quantum numbers (m and m ₁) on the one hand and a confined LO phonon on the other under conditions of low temperature when the energy difference between the electronic levelsis equal or close to the energy of the confined LO phonon. The expression for the resonant magnetic field H _res at which a combined polaron is formed contains the energy difference between size-quantized levels, so it is a function of quantum well parameters. The separation ΔE _res between branches in the energy spectrum of a combined polaron and H _res has been calculated as a function of the quantum well width d. The resonant field H _res can be reduced dramatically in comparison with the case m=m ₁. The case of size-quantization with n=n ₁ has been analyzed. The energy difference ΔE _res is in the range (1–5)· 10⁻³ eV. The damping of combined polaron states due to the effect of anharmonicity on the LO phonon has been studied. Interband absorption and features in the reflection spectrum due to interband transitions have been calculated for an arbitrary ratio between the radiative and “phonon” lifetime of a combined polaron have been investigated. Zh. éksp. Teor. Fiz. 116, 1419–1439 (October 1999)     

Plasma effects in magnetoabsorption of D<Superscript>−</Superscript> centers in quantum wells

The spectrum of magnetoabsorption of D^? centers in quantum wells is calculated with allowance for their interaction with a magnetic plasma under resonance conditions, when the distance between the Landau levels is of the same order of magnitude as the quantum energy of magnetoplasma oscillations. It is shown that splitting of Landau levels results in the fine structure of absorption lines and that the relative peak heights depend on the detuning from the resonance. The calculated frequency dependence of the absorption coefficient agrees with the experimental results.     

Manifestation of exitonic effects in the magneto-oscillations of the intensity of the recombination radiation of 2D electrons

A study is made of the temperature dependence of the magnetooscillations of the recombination radiation of 2D electrons from the photoexcited size-quantization subband in an isolated GaAs/AlGaAs quantum well. It is shown that at high temperatures (T>10 K) the period of the oscillations is determined by the ratio of the intersubband energy splitting and the sum of the electron and hole cyclotron energies. It is found that as the temperature decreases (T<5 K), a new series of oscillations (with the same period but with a larger phase shift), which are associated with the appearance of excitonic states under the Landau levels, appears. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 10, 719–724 (25 November 1996)     

Quantum Hall effect in a system with an electron reservoir

Precise measurements of the magnetic-field and gate-voltage dependences of the capacitance of a field-effect transistor with an electron system in a wide GaAs quantum well have been carried out. It has been found that the capacitance minima caused by the gaps in the Landau spectrum of the electron system become anomalously wide when two size-quantization subbands are occupied. The effect is explained by retention of the chemical potential in the gap between the Landau levels of one of the subbands owing to redistribution of electrons between the subbands under a change in the magnetic field. The calculation taking into account this redistribution has been performed in a model of the electron system formed by two two-dimensional electron layers. The calculation results describe both the wide capacitance features and the observed disappearance of certain quantum Hall effect states.     

On the electron mobility of δ layers in the presence of diamagnetic “ejection” of size-quantization levels

The Hall mobility of electrons is investigated as a function of the population of size-quantization subbands in the two-dimensional electron gas of a δ-doped layer in GaAs with constant total electron density N _s =3.2×10¹² cm⁻² (three initially filled subbands) at T=4.2 K. The population of the subbands is varied by diamagnetic “ejection” of size-quantization levels (i.e., pushing them over the Fermi level) by a magnetic field oriented parallel to the plane of the δ-doped layer. The measurements are made in magnetic fields making small angles (5°) with the plane of the doping. The magnetic field component normal to the plane was used to measure the Hall mobility and density. It is found that the measured Hall mobility as a function of the ejecting magnetic field has a distinct maximum. This maximum is due to an increase in the electron mobility in the first subband (the ground subband is assigned the index 0) and electron redistribution between subbands with in increasing ejecting magnetic field parallel to the plane of the δ layer. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 11, 704–708 (10 December 1997)     

Spin effects in InSb quantum wells

Among the III–V semiconductors, InSb has the smallest electron effective mass and the largest g-factor. We make use of these properties to explore some aspects of electron spin in InSb quantum wells with far-infrared magneto-spectroscopy. We observe the clear signature of spin-resolved cyclotron resonance caused by the non-parabolicity of the conduction band. We observe avoided-level crossings at magnetic fields where Landau levels of the same spin are predicted to intersect. We also study electron spin resonance in the far infrared over a wide range of magnetic field. In samples with symmetrically designed quantum wells we find cyclotron masses and observed g-factors in good agreement with a Pidgeon–Brown analysis adapted to the two-dimensional band structure. However, the spin splitting approaches 3 meV as the magnetic field approaches zero in samples intentionally asymmetrically doped.     

Kinetics of two-dimensional electrons on a curved surface

A number of effects associated with the curvature of the surface on which a two-dimensional (2D) electron gas is placed are studied. The most significant effect in an external magnetic field (which for 2D electrons becomes effectively nonuniform) is the lifting of the degeneracy of the Landau levels. The intensity and shape of the cyclotron resonance line (inhomogeneously broadened) for different polarizations and the corrections to the Hall constant are found for the example of a circular cylinder. A picture of the quantization of the conductance that is qualitatively different from the case of a flat strip is obtained for a quasi-one-dimensional quantum wire in the form of a hollow cylinder. It is shown that in contradistinction to the planar case the spectrum of 2D electrons on the curved surface is sensitive to the sign of the spin-orbit coupling constant (for a fixed sign of the curvature). For hetero-junctions, for example, this opens up new possibilities for extracting information about their “hidden parameters.” Pis’ma Zh. éksp. Teor. Fiz. 64, No. 6, 421–426 (25 September 1996)     

Nonlinear magnetotransport in a high-mobility quasi-two-dimensional electron system

The influence of a dc electric current I _dc on the low-temperature magnetotransport of high-mobility electrons in a GaAs double quantum well with two occupied size-quantization levels has been studied. The oscillations of the resistance ρ _xx , which are periodic in the inverse magnetic field, have been shown to appear in the quasitwo-dimensional system under consideration at a temperature of T = 4.2 K in magnetic fields B > 0.1 T; the oscillations are caused by isoenergetic resonance transitions of the electrons between the Landau levels of different subbands. The inversion of the oscillations with an increase in I _dc has been discovered. It has been found that the observed effect is due to the electron transport in a nonlinear regime.     

Two-dimensional electron gas in double quantum wells with tilted bands

When a voltage is applied to double quantum wells based on AlGaAs/GaAs heterostructures with contact regions (n-i-n structures), a two-dimensional (2D) electron gas appears in one of the quantum wells. Under illumination which generates electron-hole pairs, the photoexcited holes become localized in a neighboring quantum well and recombine radiatively with the 2D electrons (tunneling recombination through the barrier). The appearance, ground-state energy, and density of the degenerate 2D electron gas are determined from the structure of the Landau levels in the luminescence and luminescence excitation spectra as well as from the oscillations of the radiative recombination intensity in a magnetic field with detection directly at the Fermi level. The electron density is regulated by the voltage between the contact regions and increases with the slope of the bands. For a fixed slope of the bands the 2D-electron density has an upper limit determined by the resonance tunneling of electrons into a neighboring quantum well and subsequent direct recombination with photoexcited holes. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 11, 840–845 (10 June 1997)     

Electron mass operator in a strong magnetic field and dynamical chiral symmetry breaking

The electron mass operator in a strong magnetic field is calculated. The contribution of higher Landau levels of virtual electrons, along with the ground Landau level, is shown to be essential in the leading log approximation. The effect of the electron dynamical mass generation by a magnetic field is investigated. In a model with N charged fermions, it is shown that some critical number N(cr) exists for any value of the electromagnetic coupling constant alpha, such that the fermion dynamical mass is generated with a doublet splitting for NN(cr), thus leaving the chiral symmetry unbroken.     

Optical transitions and cyclotron resonance at Landau levels split by a periodic potential

The structure of the electron spectrum is investigated and selection rules are found for transitions between magnetic subbands in a surface 2D superlattice of quantum dots in a perpendicular magnetic field. The photon absorption probabilities are calculated, and the profiles of the absorption lines are determined for allowed and forbidden direct dipole transitions between subbands split off from different Landau levels. Zh. éksp. Teor. Fiz. 114, 1795–1803 (November 1998)     

Optical exciton Stark effect and quantum beats at exciton quasienergy levels in quantum wells

The optical Stark effect and quantum beats in a GaAs/AlGaAs quantum well are investigated theoretically for the case when the first two electron size-quantization levels are mixed dynamically by a high-intensity CO₂ laser pulse polarized perpendicular to the plane of the quantum well. The quasienergy spectrum of heavy-hole excitons and the ratio between the probabilities of exciton transition with and without a strong electromagnetic field are obtained. The time-dependent intensity of absorption of the sensing light is determined. It exhibits quantum beats at twice the electron Rabi frequency. Fiz. Tverd. Tela (St. Petersburg) 39, 1291–1294 (July 1997)     

Magnetotunneling relaxation of electrons in double quantum wells

Electron tunneling relaxation in double quantum wells subject to a transverse magnetic field is studied. The resonant peaks in the tunneling relaxation rate appear when the energy splitting Δ of the tunnel-coupled pair of the left- and right- well electron states is a multiple of the cyclotron energy ℏω_c and two series of the Landau levels coincide. The shape of such resonant oscillations of the relaxation rate is determined by the Landau levels' broadening (which is associated with the intrawell scattering in the case of small tunnel coupling), but it is not expressed through the electron density of states directly. The dependence of the tunneling relaxation rate on ℏω_c and Δ is calculated taking into account elastic scattering of the electrons by the inhomogeneities of the structure in the limit when the scattering potential is slowly changing on the magnetic length scale.     

Cyclotron resonance in the InAs/GaSb heterostructure in an inclined magnetic field

The mechanism of cyclotron resonance line splitting in the InAs/GaSb heterostructure in an inclined magnetic field has been studied experimentally and theoretically. It is shown that the admixing of electron and hole states leads to anticrossing of the Landau levels and, hence, to splitting of the cyclotron resonance line. In the case of an inclined magnetic field, the splitting is not observed, which is explained by the suppression of the admixing of electron and hole states due to the occurrence of an additional barrier for electrons and holes given a longitudinal magnetic field component.     

Interband resonant tunneling in superconductor heterostructures in a quantizing magnetic field

The resonant tunneling of electrons through quasistationary levels in the valence band of a quantum well in double-barrier structures based on III–V materials with type-II heterojunctions is considered in a quantizing magnetic field directed perpendicularly to the interfaces. The transmission coefficients of the tunnel structure for transitions from states corresponding to different Landau levels are calculated using the Kane model. It is shown that transitions with a unit change in the Landau level index n as a result of mixing of the wave functions of states with opposite spin orientations are possible on the interfaces due to spin-orbit coupling. The probability of such transitions can be comparable to the probability of transitions without a change in the Landau level index for InAs/AlGaSb/GaSb resonant-tunneling structures. Fiz. Tverd. Tela (St. Petersburg) 40, 2121–2126 (November 1998)     

Influence of quantization of band states on the effective electron mass in quaternary alloys

Summary An attempt is made to study the effective electron mass in quaternary alloys, taking a In_1−x Ga _x As _y P_1−y lattice matched to InP, by using the three-band Kane model under different physical conditions,e.g. bulk specimens, magnetic quantization, cross-field configuration, quantum well, electric-field-aided quantum well, magnetic-field-aided quantum well, quantum well under cross fields, quantum well wires, electric-field-aided quantum well wires, magnetic-field-aided quantum well wires and quantum well wires under cross fields by formulating the respective expressions. We have plotted the effective Fermi level mass with various physical variables under different conditions. In the presence of a quantizing magnetic field the effective mass depends on the spin splitting of Landau levels due to the spin-orbit splitting parameter of the valence bands. Under cross-field configuration and the various quantum confined low-dimensional systems, the effective masses depend on the respective quantum numbers in addition to the Fermi energies even for parabolic models because of the inherent features of such systems. In addition, the corresponding results for relatively wide-gap materials have also been obtained from our generalized formulations under certain limiting conditions.     

Magnetoplasmon replica in the recombination radiation spectra of a quasi-two-dimensional electron gas in GaAs/AlGaAs quantum wells

The radiative recombination spectra of two-dimensional electrons with free photoexcited holes are investigated for a wide variety of GaAs/ AlGaAs quantum wells, with different thicknesses and electron densities. It is found that for certain, close to integral, filling factors an intense line corresponding to an Auger process — radiative recombination with the emission of an additional magnetoplasmon — appears in the luminescence spectrum. The new line is shifted to lower energies with respect to the zero Landau level, and the magnetic field dependence of the energy splitting between these lines agrees with the theoretical concepts of the dispersion of magnetoplasmon excitations. This makes it possible to estimate the magnetoplasmon energy at the roton minimum. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 8, 539–544 (25 October 1997)     

Fano-type features in magnetoabsorption in semiconductors

It is shown that bulk semiconductors exhibit strongly asymmetric Fano-type resonance profiles in magnetoabsorption processes involving the formation of hot electron-hole pairs (EHPs) and accompanied by the scattering of the EHPs by defects. This result is valid for transitions to electronic states with large Landau quantum numbers, when the Coulomb interaction plays a small role. The physical reason for such a sharp change in the magnetoabsorption coefficient as compared with the expected result for the ordinary density of states in a quantizing magnetic field is that the electronic excitations are quasi-one-dimensional. The form of the resonance absorption is in good qualitative agreement with the experimental data. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 8, 619–622 (25 April 1996)