Characteristics of CeCoIn5/Al/AlOx/Nb and CeCoIn5/Al/AlOx/Al tunnel junctions

We report characteristics of CeCoIn₅/Al/AlO_x/Nb and CeCoIn₅/Al/AlO_x/Al tunnel junctions fabricated on the (0 0 1) surface of CeCoIn₅ crystal platelets. The main result of this work is the observation of a low Josephson current (as compared with that expected from the Ambegaokar–Baratoff formula), which is consistent with idea that the order parameter in the heavy-fermion superconductor CeCoIn₅ has unconventional pairing symmetry.     

A STJ X-ray detector with a β-tantalum sublayer

The first step in the research and development of detectors for ¹⁸¹Ta Mössbauer spectroscopy based on superconductive tunnel junctions (STJ) is taken. The idea of using β-tantalum as a trapping layer for the inactivation of the base electrode in a detector with the structure β-Ta/Nb/Al, AlO _x /Al/Nb/NbN is successfully executed.     

Nb/Al-AlOx/Nb junctions with controllable critical current density for qubit application

Nb/Al-AlOx/Nb tunnel junctions with controllable critical current density Jc are fabricated using the standard selective Nb etching process.Tunnel barriers are formed in different oxygen exposure conditions (oxygen pressure P and oxidation time t),giving rise to Jc ranging from 100 A/cm2 to above 2000 A/cm2.Jc shows a familiar linear dependence on P × t in logarithmic scales.We calculate the energy levels of the phaseand flux-type qubits using the achievable junction parameters and show that the fabricated Nb/Al-AlOx/Nb tunnel junctions can be used conveniently for quantum computation applications in the future.     

Contact passivation in silicon solar cells using atomic‐layer‐deposited aluminum oxide layers

Atomic‐layer‐deposited aluminum oxide (AlO_x) layers are implemented between the phosphorous‐diffused n⁺‐emitter and the Al contact of passivated emitter and rear silicon solar cells. The increase in open‐circuit voltage V_oc of 12 mV for solar cells with the Al/AlO_x/n⁺‐Si tunnel contact compared to contacts without AlO_x layer indicates contact passivation by the implemented AlO_x. For the optimal AlO_x layer thickness of 0.24 nm we achieve an independently confirmed energy conversion efficiency of 21.7% and a V_oc of 673 mV. For AlO_x thicknesses larger than 0.24 nm the tunnel probability decreases, resulting in a larger series resistance. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Spin-transfer switching in MgO magnetic tunnel junction nanostructures

Spin-transfer driven switching was observed in MgO based magnetic tunnelling junctions (MTJ) with tunnelling magnetoresistance ratio of up to 160% and the average intrinsic switching current density (J_c0) down to 2 MA/cm², which are the best known results reported in spin-transfer switched MTJ nanostructures. Based on a comparison of results both from MgO and AlO_x MTJs, further switching current decrease via MgO dual structures with two pinned layers is discussed.     

Effects of laser pulse wavelength and laser fluence on the characteristics of silver nanoparticle generated by laser ablation

Electrically pumped ultraviolet random lasing was achieved in metal-insulator-semiconductor (MIS) diodes based on ZnO films at room temperature. The ZnO films were grown by plasma assisted molecular beam epitaxy. Two different kinds of insulator layers, SiO _x (0<x≤2) and AlO _x (0<x≤1.5) were deposited by electron beam evaporation. X-ray diffraction experiments found these oxide layers were amorphous (or microcrystals), and X-ray photoelectron spectroscopy confirmed the Si and Al were fully oxidized. Compared with devices using SiO _x as the insulator layer, diodes with evaporated AlO _x layers showed a lower working threshold forward current (～20 mA to ～26 mA) and higher emission intensity. Periodic features indicating formation of closed-loop paths were deduced by the power Fourier transform of electroluminescence spectra. The cavity length of both devices increased as forward currents increased, while a larger cavity length was always obtained in the AlO _x -involved device under the same working current. The improved performance was attributed to larger hole amount in AlO _x layers. These results revealed that evaporated AlO _x can serve as good electron blocking and hole supplying layers for hetero-structures.     

Magnetoresistance in Co/AlOx/Co tunnel junction arrays

Lateral arrays of Co/AlO_x/Co junctions with dimensions down to 60 nm and inter-junction separations ∼60–100 nm have been fabricated and analyzed for possible coherent tunneling effects. Extra attention is paid to avoid uncertainties due to inconsistencies in switching and/or resistance of successive barriers. We observe ∼10% magnetoresistance enhancement at moderate bias in double junctions that cannot be accounted for by a simple model of two resistsors in series.     

Superconducting phase qubits with shadow-evaporated Josephson junctions

We develop a fabrication process for the superconducting phase qubits in which Josephson junctions for both the qubit and superconducting quantum interference device(SQUID) detector are prepared by shadow evaporation with a suspended bridge. Al junctions with areas as small as 0.05 μm~2 are fabricated for the qubit, in which the number of the decoherencecausing two-level systems(TLS) residing in the tunnel barrier and proportional to the junction area are greatly reduced. The measured energy spectrum shows no avoided crossing arising from coherent TLS in the experimentally reachable flux bias range of the phase qubit, which demonstrates the energy relaxation time T_1 and dephasing time T_φ on the order of 100 ns and 50 ns, respectively. We discuss several possible origins of decoherence from incoherent or weakly-coupled coherent TLS and further improvements of the qubit performance.     

约瑟夫森结AlOx-Al隧道势垒的实验研究

通过Ｘ光电子能谱（ＸＰＳ）、阳极氧化电压谱（ＡＶＳ）和Ｆｉｓｋｅ台阶电压的测量，研究了约瑟夫森结中ＡｌＯ_x-Ａｌ隧道势垒．发现结的隧道势垒最佳沉积Ａｌ层厚度为７ｎｍ，Ａｌ上形成ＡｌＯ_x厚度只取决于氧化条件，与沉积Ａｌ厚无关，势垒Ａｌ氧化物可能含有一个像ＡｌＯＯＨ态的ＯＨ基团．同时，估算了剩余Ａｌ厚度，证实了结中Ａｌ／Ｎｂ间在４.２Ｋ时，由常态Ａｌ而产生临近效应的存在 关键词：     

Difference between chemical structures of the interface at the Al-oxide tunneling barrier prepared by plasma or by radical oxidation

We have studied chemical structures of the interface between the Al-oxide tunneling barrier and the underlying Co₉₀Fe₁₀ layer in magnetic tunnel junctions when a 1-nm thick metallic Al barrier was oxidized by two different methods: plasma oxidation and radical oxidation. Our chemical analyses confirmed that the underlying CoFe layer was unavoidably attacked by oxygen during the oxidation and that this left different oxide states at the AlO_x/CoFe interface, depending on the oxidation method. The radical oxidation required long oxidation time for optimizing tunneling performance and resulted in a large amount of oxygen at the interface, which, in turn, resulted in the formation of mostly α-Fe₂O₃ and Al₂O₃. Conversely, the plasma oxidation required a relatively short oxidation time for optimization and left FeO as a dominant phase at the interface. Our results also show that the thermal treatment helped AlO_x, an oxygen-deficient phase, to be re-oxidized and transformed into Al₂O₃, the thermodynamically stable stoichiometric phase. The oxygen that diffused from the reduced CoFe layer into the barrier is likely responsible for this oxygen enrichment. We show that such differences in the chemical structure of the interface are critical clues to understanding what causes the change in tunneling properties of magnetic tunnel junctions.     

Inverse TMR in a nominally symmetric CoFe/AlOx/CoFe junction induced by interfacial Fe3O4 investigated by STEM-EELS

We have found inverse tunneling magnetoresistance (TMR) with a non-symmetric bias voltage dependence in a nominally symmetric Si (001)/Ag/CoFe/AlO_x/CoFe/IrMn/Ag magnetic tunnel junction after field cooling. The O K edge fine structure extracted from electron energy loss spectroscopy spectrum images taken at the interfaces of junctions with inverse TMR shows a thin, discontinuous Fe₃O₄ layer at the CoFe/AlO_x interfaces. The Fe L_2,3 edge core level shifts are also consistent with those of Fe₃O₄. We find no Fe₃O₄ layer in junctions with normal TMR. We believe this Fe₃O₄ layer is responsible for the inverse TMR.     

Preparation of the subnanometer thick epitaxial Al2O3(0001) layers on Fe(110) for magnetic tunnel junctions

Growth as well as crystallographic and electronic properties of thin AlO_x layers on Fe(110) were studied by means of low-energy electron diffraction and Auger-electron spectroscopy. Al layers of different thickness were deposited on Fe(110) and successfully oxidized to AlO_x. The step-by-step oxidation of thin Al layers at room temperature leads to the formation of amorphous AlO_x on top of the Fe(110) surface. A subsequent annealing at 250 °C of the oxidized 7-Å thick Al layer results in the formation of a well-ordered Al₂O₃(0001) layer on the Fe(110) surface.     

Developing topologies of thin-film SQUID sensors for measuring extremely subtle magnetic fields

A topology of thin-film SQUID sensors that are based on Nb/AlO_x/Nb tunnel junctions has been developed and optimized for nondestructive testing of materials and for other systems with a magnetic field sensitivity of <10 fT/Hz^1/2.     

Properties of superconducting Nb/Al/Nb/Al?AlOx?Al?AlOx?Al/Nb/Al/Nb tunnel junctions

Modified geometry (MG) devices, Nb/Al/Nb/Al−AlO_x−Al−AlO_x−Al/Nb/Al/Nb, have been fabricated and investigated in comparison with the basic geometry (BG) double-barrier Nb/Al−AlO_x−Al−AlO_x−Al/Nb devices. The enhancement of the critical temperature in the Al film is found to be weaker for the MG devices as compared with the BG devices at temperatures nearT=4.2 K but stronger at lowT. Indication of an enhancement of dc Josephson critical current density,j _c , at bias voltageV≠0 as compared withj _c (V=0) has been observed in the MG devices for the first time.     

Bias voltage and annealing-temperature dependences of magnetoresistance ratio in Ir–Mn exchange-biased double tunnel junctions

Dual-spin-valve-type double tunnel junctions (DTJs) of sputtered Ir–Mn/Co–Fe/AlO_x/Co₉₀Fe₁₀/AlO_x/Co–Fe/Ir–Mn were fabricated using photolithography and ion-beam milling. The DTJs were annealed at various temperatures (150–400°C) to introduce interdiffusion. The magnetoresistance (MR) ratio and DC bias voltage value at which the MR ratio decreases in half value (V_1/2) were measured before and after annealing. A maximum MR ratio and V_1/2 obtained after annealing at ∼320°C was 42.4% and 952 mV, respectively, at room temperature. There is a correlation between the loss of the MR ratio and that of V_1/2 above 320°C. The loss of the MR ratio and that of V_1/2 are well explained by considering two phenomena, i.e., interdiffusion of O and Mn at the AlO_x/Co–Fe/Ir–Mn interfaces. The mechanism for the loss of MR ratio is not only related to the loss of interface polarization, but is also related to the barrier properties, taking into account the spin-independent two-steps tunneling via defect states in the barrier. These results are consistent with the X-ray photoelectron spectroscopy and cross-sectional transmission electron spectroscopy measurements, which indicate the existence of an Al–Mn–O barrier above 320°C.     

Influence of thermal annealing on oxidation states of Al-oxide in spin tunneling junctions

The dielectric constant in annealing coercive differential spin tunneling junctions Co/Al-oxide/Co has been investigated in order to clear the influence of thermal annealing on oxidation states. Al oxidized naturally in pure O₂ shows the relative dielectric constant of 10–40 before annealing. It indicates that Al oxidized in pure O₂ can be AlO₂ because the dielectric constant of AlO₂ is approximately 22.7. This dielectric measurement result is in good agreement with XPS analysis results that O/Al ratio is 1.9–2.0. After annealing at temperature ranging from room temperature up to 250 °C, the relative dielectric constant approaches approximately 8.0, which is equal to that of Al₂O₃. This indicates that the phase of Al-oxide is changing from AlO₂ to Al₂O₃ by annealing. This dielectric measurement will help investigate the oxidation state, such as chemical composition for junctions themselves.     

Potential of chemical rounding for the performance enhancement of pyramid textured p-type emitters and bifacial n-PERT Si cells

We have investigated the effects of chemical rounding (CR) on the surface passivation and/or antireflection performance of AlO_x- and AlO_x/SiN_x:H stack-passivated pyramid textured p⁺-emitters with two different boron doping concentrations, and on the performance of bifacial n-PERT Si solar cells with a front pyramid textured p⁺-emitter. From experimental results, we found that chemical rounding markedly enhances the passivation performance of AlO_x layers on pyramid textured p⁺-emitters, and the level of performance enhancement strongly depends on boron doping concentration. Meanwhile, chemical rounding increases solar-weighted reflectance (R_SW) from ∼2.5 to ∼3.7% for the AlO_x/SiN_x:H stack-passivated pyramid textured p⁺-emitters after 200-sec chemical rounding. Consequently, compared to non-rounded bifacial n-PERT Si cells, the short circuit current density Jsc of 200-sec-rounded bifacial n-PERT Si cells with ∼60 and ∼100 Ω/sq p⁺-emitters is reduced by 0.8 and 0.6 mA/cm², respectively under front p⁺-emitter side illumination. However, the loss in the short circuit current density Jsc is fully offset by the increased fill factor FF by 0.8 and 1.5% for the 200-sec-rounded cells with ∼60 and ∼100 Ω/sq p⁺-emitters, respectively. In particular, the cell efficiency of the 200-sec-rounded cells with a ∼100 Ω/sq p⁺-emitter is enhanced as a result, compared to that of the non-rounded cells. Based on our results, it could be expected that the cell efficiency of bifacial n-PERT Si cells would be improved without additional complicated and costly processes if chemical rounding and boron doping processes can be properly optimized.     

Electron and phonon effects in superconducting tunnel detectors of x-radiation

Nb/Al/AlO_x/Nb superconducting tunnel junctions were investigated in the role of x-ray detectors. Amplitude spectra of pulses arising upon irradiation of tunnel junctions of different sizes by ⁵⁵Mn x-radiation were recorded at a temperature T=1.4 K. We also analyzed the temporal shape of the pulses. We considered the influence of diffuse motion of nonequilibrium quasiparticles, the inverse tunneling effect, and exchange of 2Δ phonons between electrodes, on the characteristics of the tunnel detectors. It is shown that phonon processes can bring about changes in the amplitude, duration, and polarity of the signal. Fiz. Tverd. Tela (St. Petersburg) 41, 1168–1175 (July 1999)     

Luminescence properties of Sr3−x−3y/2MxCeyAlO4F (M=Ca,Ba, 0≤x≤0.9, 0.001≤y≤0.05) phosphors

Luminescent materials composed of Sr_3?x?3y/2M_xCe_yAlO₄F (M=Ca, Ba, 0≤x≤0.9, 0.001≤y≤0.05) were prepared by the solid-state reaction method. X-ray diffraction (XRD) patterns of the obtained oxyfluorides are exhibited for indexing peak positions. Dynamic excitation and emission spectra of the Ce³⁺-activated oxyfluoride phosphors are clearly monitored. The critical emission quenching as a function of Ce³⁺ contents in Sr_2.5?3y/2M_0.5Ce_yAlO₄F phosphors is revealed at quite low concentrations of the activator. CIE coordinates of blue and green Sr_2.5?3y/2M_0.5Ce_yAlO₄F phosphors are clearly measured. The relative quantum efficiency of Sr_2.4985Ca_0.5Ce_0.005AlO₄F based on the integrated emission is determined. The Sr_3?x?3y/2M_xCe_yAlO₄F phosphors excited near 410 nm light could be prominent phosphors in applications of NUV-LED.     

Luminescent properties of Sr2.5−3x/2Ba0.5SmxAlO4F oxyfluorides

Effective orange Sm³⁺-doped Sr_2.5Ba_0.5AlO₄F phosphors excited at 254 and 408 nm excitation were prepared by the solid-state method. The excitation and emission spectra of Sr_2.5?3x/2Ba_0.5Sm_xAlO₄F and Sr_2.5?3x/2Ba_0.5Sm_xAlO_4?αF_1?δ (x=0.001～0.1) based on photoluminescence spectroscopy are investigated. The defects in anion-deficient Sr_2.5?3x/2Ba_0.5Sm_xAlO_4?αF_1?δ (x=0.001, 0.01) are monitored by broad-band photoluminescence emission centered near 480 nm along with the orange emission transitions of Sm³⁺. CIE values and relative luminescent intensities of Sr_2.5?3x/2Ba_0.5Sm_xAlO₄F and Sr_2.5?3x/2Ba_0.5Sm_xAlO_4?αF_1?δ by changing the Sm³⁺ content (x=0.001～0.1) are discussed.