Blistering of rhenium irradiated with 21keV helium ions

This paper describes blistering of rhenium following 21 keV He⁺-ion irradiation at temperatures between 300 K and 1200 K. Blistering starts at 300 K at a dose of 3×10¹⁷ ions/cm². The most probable blister diameter varies from 4400 ? at 300 K to 10100 ? at 1200 K. The blister depth τ _bl , the blister diameter φ _bl and the blister heighth _bi show a distribution. From the observations one could derive the following relationships:h _bl = 0.35φ _bl ; τ _bl =3.43φ _bl ^2/3 . The erosion yieldE _y due to blistering is function of doseE _y =0.51 atoms/ion at 3×10¹⁷ ions/cm²,E _y =0.56 atoms/ion at 6×10¹⁷ ions/cm² andE _y =0.14 atoms/ion at 3×10¹⁸ ions/cm². The sputtering yieldS (21 keV) is estimated to be ∼0.1 atom/ion. The corresponding surface regression is 44? at 3×10¹⁷ ions/cm² and 1323 ? at 9×10¹⁸ ions/cm². Surface regression has therefore little influence on the observations at low doses. Work performed at the Mathematicals Science Department of S.C.K./C.E.N. at Mol (Belgium)     

Quantum oscillations of the resistivity and hall coefficient and the quantum limit in Bi<Subscript>0.93</Subscript>Sb<Subscript>0.07</Subscript> alloys in a magnetic field along the trigonal axis

The dependences of the electrical resistivity ρ and the Hall coefficient R on the magnetic field have been measured for single-crystal samples of the n-Bi_0.93Sb_0.07 semiconductor alloys with electron concentrations in the range 1 × 10¹⁶ cm⁻³ < n < 2 × 10¹⁸ cm⁻³. It has been found that the measured dependences exhibit Shubnikov-de Haas quantum oscillations. The magnetic fields corresponding to the maxima of the quantum oscillations of the electrical resistivity are in good agreement with the calculated values of the magnetic fields in which the Landau quantum level with the number N intersects the Fermi level. The quantum oscillations of the Hall coefficient with small numbers are characterized by a significant spin splitting. In a magnetic field directed along the trigonal axis, the quantum oscillations of the resistivity ρ and the Hall coefficient R are associated with electrons of the three-valley semiconductor and are in phase with the magnetic field. In the case of a magnetic field directed parallel to the binary axis, the quantum oscillations associated both with electrons of the secondary ellipsoids in weaker magnetic fields and with electrons of the main ellipsoid in strong magnetic fields (after the overflow of electrons from the secondary ellipsoids to the main ellipsoid) are also in phase. In magnetic fields of the quantum limit ħω _c /2 ≥ E _F, the electrical conductivity increases with an increase in the magnetic field: σ₂₂(H) ∼ H ^k . A theoretical evaluation of the exponent in this expression for a nonparabolic semiconductor leads to values of k close to the experimental values in the range 4 ≤ k ≤ 4.6, which were obtained for samples of the semiconductor alloys with different electron concentrations. A further increase in the magnetic field results in a decrease of the exponent k and in the transition to the inequality σ₂₂(H) ≤ σ₂₁(H).     

Physical property characterization of bulk MgB<Subscript>2</Subscript> superconductor

We report synthesis, structure/micro-structure, resistivity under magnetic field [ρ(T)H], Raman spectra, thermoelectric power S(T), thermal conductivity κ(T), and magnetization of ambient pressure argon annealed polycrystalline bulk samples of MgB₂, processed under identical conditions. The compound crystallizes in hexagonal structure with space group P6/mmm. Transmission electron microscopy (TEM) reveals electron micrographs showing various types of defect features along with the presence of 3–4 nm thick amorphous layers forming the grain boundaries of otherwise crystalline MgB₂. Raman spectra of the compound at room temperature exhibited characteristic phonon peak at 600 cm^-1. Superconductivity is observed at 37.2 K by magnetic susceptibility χ(T), resistivity ρ(T), thermoelectric power S(T), and thermal conductivity κ(T) measurements. The power law fitting of ρ(T) give rise to Debye temperature (Θ_D) at 1400 K which is found consistent with the theoretical fitting of S(T), exhibiting Θ _D of 1410 K and carrier density of 3.81 × 10²⁸/m³. Thermal conductivity κ(T) shows a jump at 38 K, i.e., at T_c, which was missing in some earlier reports. Critical current density (J_c) of up to 10⁵ A/cm² in 1–2 T (Tesla) fields at temperatures (T) of up to 10 K is seen from magnetization measurements. The irreversibility field, defined as the field related to merging of M(H) loops is found to be 78, 68 and 42 kOe at 4, 10 and 20 K respectively. The superconducting performance parameters viz. irreversibility field (H_irr) and critical current density J_c(H) of the studied MgB₂ are improved profoundly with addition of nano-SiC and nano-diamond. The physical property parameters measured for polycrystalline MgB₂ are compared with earlier reports and a consolidated insight of various physical properties is presented.     

Effect of swift heavy ion irradiation on surface resistance of DyBa2Cu3O7-δ thin films at microwave frequencies

We report the observation of a propounced peak in surface resistance at microwave frequencies of 4.88 GHz and 9.55 GHz and its disappearance after irradiation with swift ions in laser ablated DyBa₂Cu₃O_7-δ (DBCO) thin films. The measurements were carried out in zero field as well as in the presence of magnetic fields (up to 0.8 T). The films were irradiated using 90 MeV oxygen ions at Nuclear Science Centre, New Delhi at a fluence of 3×10¹³ ions/cm². Introduction of point defects and extended defects after irradiation suppresses the peak at 9.55 GHz whereas no suppression is observed at 4.88 GHz. These results and the vortex dynamics in the films at microwave frequencies before and after irradiation are discussed.     

Spectroscopic properties of Nd<Superscript>3+</Superscript>:CaNb<Subscript>2</Subscript>O<Subscript>6</Subscript> crystal

The absorption spectra, fluorescence spectrum and fluorescence decay curve of Nd³⁺ ions in CaNb₂O₆ crystal were measured at room temperature. The peak absorption cross section was calculated to be 6.202×10⁻²⁰ cm² with a broad FWHM of 7 nm at 808 nm for E//a light polarization. The spectroscopic parameters of Nd³⁺ ions in CaNb₂O₆ crystal have been investigated based on Judd-Ofelt theory. The parameters of the line strengths Ω _t are Ω ₂=5.321×10⁻²⁰ cm²,Ω ₄=1.734×10⁻²⁰ cm²,Ω ₆=2.889×10⁻²⁰ cm². The radiative lifetime, the fluorescence lifetime and the quantum efficiency are 167 μs, 152 μs and 91%, respectively. The fluorescence branch ratios are calculated to be β ₁=36.03%,β ₂=52.29%,β ₃=11.15%,β ₄=0.533%. The emission cross section at 1062 nm is 9.87×10⁻²⁰ cm².     

Dynamics in molecular crystals: An application of proton NMR to selectively protonated biphenyl. Do the rings flip together or independently?

The synthesis of a specific isotopomer, C₆D₄H(ortho)-H(ortho)D₄C₆ of biphenyl is reported. The intramolecular dipolar coupling of the protons leads to a well-resolved single-crystal proton nuclear magnetic resonance (NMR) spectrum and allows one to study the dynamics of the phenyl rings in a unique way. At room temperature and above, the most conspicuous dynamical mode consists of 180° ring flips. The present data together with previous measurements of the total flip rate allow us to conclude that the rings flip almost exclusively independently of each other. Between the incommensurate (IC) phase transition of biphenyl at 38 K andT=250 K, the prominent namical mode consists of oscillatory twists ϕ(t) of the two rings. The data allow us to infer the mean square, (φ²), of these twists. (φ²) is found to grow linearly withT for 50<T<200 K. From the slope of (φ²) vs.T the frequency (the wave number[(v)\tilde]\tilde v) is derived. The result is[(v)\tilde] = 20\tilde v = 20 cm⁻¹. ForT<38 K, the spectra give direct evidence of the IC phase transition and its nature (stripelike rather than quiltlike). The temperature dependence of the magnitude of the order parameter of the IC phase is obtained.     

The dynamics of accumulation of electrically active radiation defects on implantation of graded-band-gap HgCdTe films grown by MBE

The dynamics of accumulation of electrically active radiation defects under ion doping of epitaxial Cd _x Hg _1−x Te films is studied for various distributions of film composition in the implantation region. The epitaxial films were irradiated by boron ions at room temperature in the continuous regime, with the dose ranging within 10¹¹−3·10¹⁵ cm⁻², energy — 20–150 keV, and ion current density — j = 0.001–0.2 μA·cm⁻². It is found that the natural logarithm of the introduction rate of electrically active radiation defects linearly depends on the epitaxial-film composition in the range of mean projected path of implanted ions. An analysis of the experimental data shows that the dynamics of accumulation of electrically active radiation defects is determined by the epitaxial-film composition in the implantation region. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 25–28, September, 2006.     

Superconducting characteristics of (Bi, Pb)-2223 single crystals with controlled oxygen-content

Critical current density was measured for oxygen-controlled (Bi, Pb)-2223 single crystals before and after the irradiation with gold ions in a magnetic field parallel to the irradiation-induced defects along the c-axis. Eleven specimens prepared in different annealing conditions were measured. The condensation energy density of each specimen was evaluated from the observed critical current density by using the summation theory of pinning forces of columnar defects and the flux creep theory. It was found that the specimen heat-treated at 1 atm in oxygen atmosphere has the highest condensation energy density among all specimens. Hence, it is speculated that the optimum oxygen pressure for the anneal is around 1 atm.     

Electrical and magnetic properties of hot extruded Bi-2223/Ag concentric tapes

Summary In this work we report on the anisotropic physical properties of silver-sheathed Bi-2223 tapes fabricated by means of hot extrusion and repeated pressing and sintering processes. The obtained Bi-2223/Ag short tapes, having critical current densitiesJ _c of 20–30 kA/cm² at 77 K, 0 T, were measured in external magnetic fields up to 0.5T applied in two different orientations (i.e. μ₀H‖(a,b)-planes and μ₀H ⊥(a,b)-planes). The magnetic characterizations were performed in a wide range of temperatures and magnetic fields to study the first magnetization curve of tapes evaluating the lower critical fields μ₀H_c1⊥ab and ⊥₀H_c1#x2016;ab and their dependences on temperature. TheJ _c values at different fields in the temperature range 4.6–90 K, calculated from the magnetization data by the critical state model, are also presented. Paper presented at the ?VII Congresso SATT?, Torino, 4–7 October 1994.     

Peak effect at microwave frequencies in swift heavy ion irradiated YBa2Cu3O7-δ thin films

The vortex dynamics at microwave frequencies in YBa₂Cu₃O_7-δ (YBCO) films have been studied. We observe a peak in the microwave (4.88 and 9.55 GHz) surface resistance in some films in magnetic fields up to 0.8 T. This is associated with the ‘peak-effect’ phenomenon and reflects the order-disorder transformation of the flux line lattice near the transition temperature. Introduction of artificial pinning centers like columnar defects created as a result of irradiation with 200 MeV Ag ion (at a fluence of 4×10¹⁰ ions/cm²) leads to the suppression of the peak in films previously exhibiting ‘peak effect’.     

Transport properties of long monofilamentary Bi(2223) tapes

Summary Monofilamentary Bi(2223) tapes withJ _c(77 K, 0 tesla) up to 30 000 A/cm² have been prepared by cold rolling using the powder-in-tube method. An optimization of the precursor powders has led to a higher phase purity after the reaction heat treatment. The deformation process has been optimized in order to increase the oxide density and to reduce sausaging effects on the oxide thickness. The transport properties of these tapes have been studied in a wide range of temperature (4.2K-T _c) and magnetic fields (up to 28 tesla). The critical-current values at 77 K fields of 0.5 T and 1 T parallel to the tape surface are 10 000 A/cm² and 5400 A/cm², respectively. At 4.2 K theJ _c value decreases from 1.6·10⁵ A/cm² at 0 T to 6·10⁴ A/cm² at 15 T. At fields higher than 15 tesla a very low field dependence ofJ _c has been found, regardless of the tape orientation. Transport properties have also been studied by cutting small sections of the tape in order to investigate the local critical-current distribution. It has been found that, even in rolled tapes of good quality (J _c (77 K, 0 T)>20000 A/cm²), theJ _c distribution is homogeneous: the critical current density increases gradually from the centre of the tape to the sides, the latter exhibiting much higherJ _c (46000 A/cm²) than in the centre (18000 A/cm²). Paper presented at the ?VII Congresso SATT?, Torino, 4–7 October 1994.     

Weak exchange interactions in the heteronuclear crystal CuPr2(CCl3COO)8·6H2O

The new heteronuclear crystal CuPr₂(CCl₃COO)₈·6H₂O, constructed of chains containing copper and praseodymium atoms, has been synthesized and investigated by EPR at 9.3 GHz at temperatures ranging from room temperature down to 10 K. At temperatures T∼300–130 K, EPR spectra are observed which are characteristic of isolated polyhedra of copper ions with g _z=2.330±0.005, g _x,y =2.053±0.005, A _z=139×10⁻⁴ cm⁻¹, and A _x,y <26×10⁻⁴ cm⁻¹. At temperatures T<130 K a complex spectrum is observed, associated with the appearance of weak exchange interactions between the copper ions in the chain (J _Cu-CuΣS _i·S _i+1), comparable in magnitude with the hyperfine interactions J _Cu-Cu=0.015 cm⁻¹ at T=10 K. The magnitude of the exchange interaction decreases smoothly as the temperature is raised. It is conjectured that orbitals of the praseodymium ions participate in the process of indirect exchange between the copper ions. Fiz. Tverd. Tela (St. Petersburg) 41, 2154–2157 (December 1999)     

ESR study of exchange coupled pairs in copper diethyldithiocarbamate

ESR investigations on exchange coupled pairs of Cu ions in single crystals of Cu(dtc)₂, isomorphously diluted with the corresponding diamagnetic zinc salt, are reported. The spin Hamiltonian parameters for the coupled species (S=1) are:g _‖=2.1025,g ₊=2.031,A=75.1×10⁻⁴ cm⁻¹,B=14.8×10⁻⁴,D=276.0×10⁻⁴ cm⁻¹ andE=46.7×10⁻⁴ cm⁻¹. While theg andA tensors show tetragonal symmetry, the zeor-field splitting tensor is rhombic and has principal axes different from those of theg andA tensors. Intensity measurements made down to 4.2 K indicate that the exchange is ferromagnetic with |FFF| ∼ 10 cm⁻¹. Direct dipole-dipole interaction appears to be the major contribution to the zero-field splitting. A calculation on the distributed point dipole model shows that dipolar interaction is considerably modified by the high covalency of the Cu-S bond and accounts for the rhombic nature of the tensor. The possible exchange mechanisms in Cu(dtc)₂—direct exchange and superexchange through the bridging sulphurs—are discussed.     

CEMS study on aluminium implanted iron

Up to now a great deal of investigations in ion beam mixing of iron-aluminium layers are known. However, the easier way to produce such layers by direct implantation of aluminium ions in iron is less studied. In the present work aluminium implanted iron layers are studied. Iron samples were implanted with aluminium ions at 50, 100, and 200 keV, respectively, with doses between 5×10¹⁶ and 5×10¹⁷ cm⁻². Independent of energy, at doses up to 2×10¹⁷ cm⁻², besides alpha iron further magnetic fractions with a Fe₃Al-like structure are formed while at a dose of 5×10¹⁷ cm⁻² amorphous nonmagnetic components are formed.     

Reduction in the rate of phonon scattering by a spatially correlated system of iron ions and low-temperature “anomaly” of the thermoelectric phenomena in HgSe:Fe crystals

A new effect of the reduction in the rate of phonon scattering by the spatially correlated system of iron ions in HgSe:Fe crystals is detected experimentally and calculated theoretically. The thermoelectric power is measured using HgSe:Fe samples with different iron content in the temperature range 7.5–60 K. It is found that the dependence of the thermoelectric power on iron content exhibits remarkable features at T<10 K: the quantity |α(N _Fe )| increases as the iron concentration increases to N _Fe =5×10¹⁸ cm⁻³, reaches a maximum at N _Fe ≈(1–2)×10¹⁹ cm⁻³, but then monotonically decreases with further increases in N _Fe . It is shown that the obseved increase in the thermoelectric power is due to a reduction in the rate of phonon scattering by the spatially correlated system of Fe³⁺ ions. This new effect is analyzed theoretically, and the theoretical results are compared with the experimental data. Zh. éksp. Teor. Fiz. 114, 191–207 (July 1998)     

ESR of V4+ in α-RbTiOPO4 single crystals

We have recorded and investigated the ESR spectrum of vanadium-doped α-RbTiOPO₄ single crystals in the temperature interval 77–300 K. Two types of structurally distinct centers, V1 and V2, with a 4:1 ratio of the peak intensities were observed. The angular dependences of the resonance magnetic fields are described by a spin Hamiltonian corresponding to axial symmetry with the parameters g _∥1=1.9305, g _⊥1=1.9565, A _∥1=−168.2×10⁻⁴cm⁻¹, and A _⊥1=−54.3×10⁻⁴cm⁻¹ for V1 centers and g _∥2=1.9340, g _⊥2=1.9523, A _∥2=−169.0×10⁻⁴cm⁻¹, and A _⊥2=−55.2×10⁻⁴cm⁻¹ for V2 centers. A model of a paramagnetic center is proposed: The vanadium ions replace titanium ions in two structurally distinct positions Ti1 and Ti2 (V1 and V2 centers, respectively). The possibility that a VO²⁺ ion forms when α-RbTiOPO₄ crystals and crystals of the KTP group (KTiOPO₄, NaTiOPO₄, α-and β-LiTiOPO₄), studied earlier, are doped with vanadium is discussed. Fiz. Tverd. Tela (St. Petersburg) 40, 534–536 (March 1998)     

Spectroscopy of quasiparticle excitations of superconducting bismuth cuprate at high pressures

We study the energy spectrum of Bi2223 (Bi_1.6Pb_0.4Sr_1.8Ca_2.2Cu₃O_x) at high hydrostatic pressures by Andreev-and tunneling-spectroscopy methods. We determine the gap anisotropy in the basal ab plane and find the following values for the parameters Δ(ϕ): Δ_max=42 mV, and Δ_min=19.5 mV (T _c =110 K and dT _c /dP=0.16 K/kbar). We detect an increase in the ratio R=2Δ_max/kT _c with pressure P; for Bi2223 cuprate, dR/dP≈0.017 kbar⁻¹. In the phonon-frequency region we detect a “softening,” due to pressure, of the high-frequency part of the phonon spectrum corresponding to “breathing” modes of oxygen, as well as other optical modes of Cu-O. The characteristic frequencies of the spectrum for ℏΩ>60 mV are found to decrease, with increasing pressure, at a rate d ln(ℏΩ)/dP≈−6.5±0.5×10⁻³ kbar⁻¹. This result explains the observed increase in the ratio 2Δ/kT _c (P) in the model of strong electron-phonon interaction. Zh. éksp. Teor. Fiz. 113, 1397–1410 (April 1998)     

implantation of Bi into GaP. II. channeling studies

The channeling technique has been used to investigate the properties of Bi-implanted Gap. Measurements of the crystal disorder for 100 keV room temperature implants indicate a damage vs dose curve corresponding to ～13000 displacements/ion in the linear region and saturation at ～1.5 × 10¹³ Bi ions/cm². Annealing of the radiation damage has been observed and indicates two annealing steps at ～450°C for light damage and ～750°C for implants in the 1 × 10¹⁴/cm² range. Difficulties associated with the thermal decomposition of the implanted area have been overcome with the use of SiO _x coatings. The experimental details associated with the use of the SiO _x layer and with the use of a C¹² beam to obtain better depth and mass resolution in the backscattering spectrum are discussed. The lattice location measurements of the Bi impurity show ～50 per cent of the Bi atoms to be along the 〈110〉 string after a 900°C anneal for a 7.5 × 10¹³/cm² implant. In addition, the spectra show ～25 per cent of the Bi atoms have diffused to the surface. Correlations of these lattice location results with measurements of the photoluminescent intensity of the GaP (Bi) isoelectronic trap show an agreement in trend with anneal temperature but indicate a factor of ～10 more substitutional ions in the channeling measurement as compared to the photoluminescence results.     

Further studies on Ag/BPSCCO tapes using low purity materials

Transmission electron microscopic (TEM) studies are reported on Ag-clad Bi_1.7 Pb_0.4Sr_1.8Ca₂Cu_3.5O _x tapes prepared by using low purity (98–99%) commercial grade materials. The self-fieldJ _c values of these tapes viz. 6.14 × 10³ A.cm⁻² at 77 K and 1.4 × 10⁵ A.cm⁻² at 4.2 K, reported in an earlier publication, were significantly higher than the correspondingJ _c values in tapes prepared with high purity (99.99%) materials. The TEM pictures on the low purity core material of the tapes reveal the presence of stacking faults and the intergrowth of the 2212 and 2223 phases which could be acting as flux pinning sites and responsible for enhancedJ _c values. These defects can perhaps be traced back to the presence of 60 ppm iron in the low purity CuO as revealed by atomic absorption analysis reported earlier.     

Critical current density and vortex dynamics in uranium irradiated Co-doped BaFe2As2

We report the effect of defects introduced by heavy-ion irradiation with 2.6 GeV uranium ions at several matching fields in single crystalline Ba(Fe_0.925Co_0.075)₂As₂. The suppression rate of T_c at lower matching fields is larger than that at higher matching fields. The critical current density calculated from magnetic hysteresis loop is enhanced up to 4.1 × 10⁶ A/cm² at 2 K. Clear dips in magnetic hysteresis loops near zero field are observed at high matching fields. Field dependence of normalized relaxation rate is suppressed, and the relationship between the dip and the relaxation rate is discussed.