Conductance and shot noise of inelastic tunneling through a quantum dot in the Kondo regime

We investigate the inelastic transport properties of a quantum dot connected to two leads, based on the combination of a recently developed nonperturbative technique and slave-boson methods involving the approximate mapping of the many-body electron–phonon coupling problem onto a multichannel scattering problem in the Kondo regime. The nonequilibrium Green's function method is adopted in calculations for the inelastic transport processes of electrons in the limit of large Coulomb interaction U→∞$U\to \infty$ under nonequilibrium conditions. The electron–phonon interactions, which are the main source of the inelasticity, are taken into account. For a single quantum dot, we find that the differential conductance and the shot noise exhibit new structures of peaks and dips which are absent in the case without electron–phonon interactions.     

Selective spin injection controlled by electrical way in ferromagnet/quantum dot/semiconductor system

Selective and large polarization of current injected into semiconductor (SC) is predicted in ferromagnet (FM)/quantum dot (QD)/SC system by varying the gate voltage above the Kondo temperature. In addition, spin-dependent Kondo effect is also revealed below Kondo temperature. It is found that Kondo resonances for up spin state are suppressed with increasing of the polarization P of the FM lead. While the down one is enhanced. The Kondo peak for up spin is disappear at P=1.     

Mesoscopic Fano effect modulated by Rashba spin–orbit coupling and external magnetic field

By employing non-equilibrium Green's function method, the mesoscopic Fano effect modulated by Rashba spin–orbit (SO) coupling and external magnetic field has been elucidated for electron transport through a hybrid system composed of a quantum dot (QD) and an Aharonov–Bohm (AB) ring. The results show that the orientation of the Fano line shape is modulated by the Rashba spin–orbit interaction kRL$k_{R}L$ variation, which reveals that the Fano parameter q will be extended to a complex number, although the system maintains time-reversal symmetry (TRS) under the Rashba SO interaction. Furthermore, it is shown that the modulation of the external magnetic field, which is applied not only inside the frame, but also on the QD, leads to the Fano resonance split due to Zeeman effect, which indicates that the hybrid is an ideal candidate for the spin readout device.     

Electronic transport through a Majorana bound state coupled to a T-shaped quantum-dot system with Coulomb interaction

Using the Green’s function technique, we respectively investigate the electron transport properties of two spin components through the system of a T-shaped double quantum dot structure coupled to a Majorana bound state, in which only one quantum dot is connected with two metallic leads. We explore the interplay between the Fano effect and the MBSs for different dot-MBS coupling strength λ, dot-dot coupling strength t, and MBS-MBS coupling strength ε_M in the noninteracting case. Then the Coulomb interaction and magnetic field effect on the conductance spectra are investigated. Our results indicate that G_↓(ω) is not affected by the Majorana bound states, but a “0.5” conductance signature occurs in the vicinities of Fermi level of G_↑(ω). This robust property persists for a wide range of dot-dot coupling strength and dot-MBS coupling strength, but it can be destroyed by Coulomb interaction in quantum dots. By adjusting the size and direction of magnetic field around the quantum dots, the “0.5” conductance signature damaged by U can be restored. At last, the spin magnetic moments of two dots by applying external magnetic field are also predicted.     

Inelastic low-temperature transport through a quantum dot with a Mn ion

Using the nonequilibrium Hubbard operator Green's function technique, we study the inelastic low-temperature quantum transport through an artificial single-molecule magnet coupled to a single phonon mode. For a minimal model based on CdTe quantum dot doped with a single Mn²⁺ ion (S=5/2), the calculated results show that in the presence of hole–phonon coupling, in addition to main Kondo-like peaks associated with (2S+1) sublevels of spin pair states, satellite Kondo-like peaks originating from emitting phonons appear in the local density of states and differential conductance. Moreover, the number of these phonon-induced Kondo-like peaks depends on the parity of the local large spin, i.e., S=integer or half-integer. It is expected that the intrinsic properties of artificial single-molecule magnets can be obtained by detecting these transport characteristics.     

Spin fluctuations and ferromagnetic order in two-dimensional itinerant systems with Van Hove singularities

The quasistatic approach is used to analyze the criterion of ferromagnetism for two-dimensional (2D) systems with the Fermi level near Van Hove (VH) singularities of the electron spectrum. It is shown that the spectrum of spin excitations (paramagnons) is positively defined when the interaction between electrons and paramagnons, determined by the Hubbard on-site repulsion U, is sufficiently large. Due to incommensurate spin fluctuations near the ferromagnetic quantum phase transition, the critical interaction U_c remains finite at VH filling and exceeds considerably its value obtained from the Stoner criterion. A comparison with the functional renormalization group results and mean-field approximation which yields a phase separation is also performed.     

Spin polarized Kondo transport through a quantum dot connected to ferromagnetic leads

We study the spin dependent transport through a quantum dot connected to ferromagnetic leads. Using the non-equilibrium generalization of the non-crossing approximation for finite Coulomb repulsion U, we compute the spin polarized conductance, the local average occupancies and the local densities of states in the Kondo regime. We show that transport properties are strongly affected if we allow double occupancy by using a finite value for U. In the framework of our model, we have successfully reproduced the recent experimental finding of an electrically controlled magnetic moment on a carbon nanotube quantum dot coupled to ferromagnetic nickel leads [3]. Besides, in addition to the well known splitting of the Kondo peak in the density of states due to the presence of ferromagnetic leads, we find that the additional splitting due to non-zero bias voltage leads to an unexpected increase of the total conductance, which has also been observed by Hauptmann et al.     

Influence of intradot Coulomb correlations on the Andreev reflection in a ferromagnetic metal/quantum dot/superconductor hybrid junction

Spin-dependent tunneling through a quantum dot coupled to one ferromagnetic and onesuperconducting electrodes is studied in the Andreev reflection (AR) regime. Electricalconductance is calculated within the nonequilibrium Green function technique. Features ofthe AR current involved by the intradot Coulomb correlations (or the dot’s chargingenergy U) and in the presence of the Zeeman splitting of the dotdiscrete level are analyzed in both linear and nonlinear transport regimes. A newinterference effect due to AR is predicted to appear in the case of a weak on-dotrepulsion. Strong Coulomb correlations studied in nonequilibrium situation revealedsignificant modifications of the AR differential conductance occurring only in case ofspin-polarized transmission. Origin of a variety of the multipeak structure of theconductance for the system with the interacting quantum dot, as well as the conditions forthe perfect U-dependent AR transmission are also discussed.     

Spin valve effect and negative tunnel magnetoresistance in a quantum dot transistor

We study the spin polarized transport through a quantum dot transistor. It is shown that the interplay of large Coulomb interaction and optically induced spin accumulation gives rise to the spin valve effect over a range of bias. We also find negative tunnel magnetoresistance for system with ferromagnetic electrodes.     

T型双量子点分子Aharonov-Bohm干涉仪的电输运

利用非平衡格林函数方法, 理论研究T型双量子点分子Aharonov-Bohm (A-B)干涉仪的电荷及其自旋输运性质. 通过控制T型双量子点分子内量子点间有无耦合, 能够实现在同一电子能级位置处分别出现共振和反共振状态, 根据此性质, 能将体系设计成量子开关器件. 当将两个完全相同的T型双量子点分子分别嵌入A-B干涉仪两臂中时, 磁通取适当数值, 能够出现完全的量子相消干涉. 通过调节量子点能级、左右两电极间的偏压和Rashba自旋轨道相互作用强度, 可对体系自旋流进行调控. 关键词： 非平衡格林函数 T型双量子点分子 Aharonov-Bohm干涉仪 自旋输运     

Spin-Dependent Electron Properties of a Triple-Terminal Quantum Dot Structure

Electron transport properties of a triple-terminal Aharonov-Bohm interferometer are theoretically studied. By applying a Rashba spin-orbit coupling to a quantum dot locally, we find that remarkable spin polarization comes about in the electron transport process with tuning the structure parameters, i.e., the magnetic flux or quantum dot levels. When the quantum dot levels are aligned with the Fermi level, there only appear spin polarization in this structure by the presence of an appropriate magnetic flux. However,in absence of magnetic flux spin polarization and spin separation can be simultaneously realized with the adjustment of quantum dot levels, namely, an incident electron from one terminal can select a specific terminal to depart from the quantum dots according to its spin state.     

硅纳米结构晶体管中与杂质量子点相关的量子输运

在小于10 nm的沟道空间中,杂质数目和杂质波动范围变得十分有限,这对器件性能有很大的影响.局域纳米空间中的电离杂质还能够展现出量子点特性,为电荷输运提供两个分立的杂质能级.利用杂质原子作为量子输运构件的硅纳米结构晶体管有望成为未来量子计算电路的基本组成器件.本文结合安德森定域化理论和Hubbard带模型对单个、分立和耦合杂质原子系统中的量子输运特性进行了综述,系统介绍了提升杂质原子晶体管工作温度的方法.     

Nonequilibrium spin transport through a diluted magnetic semiconductor quantum dot system with noncollinear magnetization

The spin-dependent transport through a diluted magnetic semiconductor quantum dot (QD) which is coupled via magnetic tunnel junctions to two ferromagnetic leads is studied theoretically. A noncollinear system is considered, where the QD is magnetized at an arbitrary angle with respect to the leads’ magnetization. The tunneling current is calculated in the coherent regime via the Keldysh nonequilibrium Green’s function (NEGF) formalism, incorporating the electron–electron interaction in the QD. We provide the first analytical solution for the Green’s function of the noncollinear DMS quantum dot system, solved via the equation of motion method under Hartree–Fock approximation. The transport characteristics (charge and spin currents, and tunnel magnetoresistance (TMR)) are evaluated for different voltage regimes. The interplay between spin-dependent tunneling and single-charge effects results in three distinct voltage regimes in the spin and charge current characteristics. The voltage range in which the QD is singly occupied corresponds to the maximum spin current and greatest sensitivity of the spin current to the QD magnetization orientation. The QD device also shows transport features suitable for sensor applications, i.e., a large charge current coupled with a high TMR ratio.     

Spin-polarized current generated by magneto-electrical gating

We theoretically study spin-polarized current through a single electron tunneling transistor (SETT), in which a quantum dot (QD) is coupled to non-magnetic source and drain electrodes via tunnel junctions, and gated by a ferromagnetic (FM) electrode. The I–V characteristics of the device are investigated for both spin and charge currents, based on the non-equilibrium Green's function formalism. The FM electrode generates a magnetic field, which causes a Zeeman spin-splitting of the energy levels in the QD. By tuning the size of the Zeeman splitting and the source–drain bias, a fully spin-polarized current is generated. Additionally, by modulating the electrical gate bias, one can effect a complete switch of the polarization of the tunneling current from spin-up to spin-down current, or vice versa.     

Spin-dependent transport through quantum dot with inelastic interactions

Using the Keldysh nonequilibrium Green function method, we theoretically investigate the electron transport properties of a quantum dot coupled to two ferromagnetic electrodes, with inelastic electron-phonon interaction and spin flip scattering present in the quantum dot. It is found that the electron-phonon interaction reduces the current, induces new satellite polaronic peaks in the differential conductance spectrum, and at the same time leads to oscillatory tunneling magnetoresistance effect. Spin flip scattering suppresses the zero-bias conductance peak and splits it into two, with different behaviors for parallel and anti-parallel magnetic configuration of the two electrodes. Consequently, a negative tunneling magnetoresistance effect may occur in the resonant tunneling region, with increasing spin flip scattering rate.     

量子点双链中电子自旋极化输运性质

利用非平衡格林函数方法, 研究了与单个量子点耦合的量子点双链中电子自旋极化输运性质. 由于系统中Rashba自旋轨道耦合产生的自旋相关的相位, 电子通过上下两种路径时, 自旋不同的电子干涉情况不同, 从而导致了电极中的自旋极化流. 左右两电极间的偏压使单个量子点中的自旋积聚在很大能量区域内能够保持较大的值. 由于系统结构的左右不对称, 正负偏压下自旋积聚情况完全不同. 这些计算结果将有助于实验上设计新型的自旋电子学器件.     

Theoretical study on InxGa1−xN/GaN quantum dots solar cell

In this work, the structure of In_xGa_1−xN/GaN quantum dots solar cell is investigated by solving the Schrödinger equation in light of the Kronig-Penney model. Compared to p-n homojunction and heterojunction solar cells, the In_xGa_1−xN/GaN quantum dots intermediate band solar cell manifests much larger power conversion efficiency. Furthermore, the power conversion efficiency of quantum dot intermediate band solar cell strongly depends on the size, interdot distance and gallium content of the quantum dot arrays. Particularly, power conversion efficiency is preferable with the location of intermediate band in the middle of the potential well.     

铁磁/半导体/铁磁结构的双量子环自旋输运的特性

研究了与铁磁/半导体/铁磁结构相关的双量子环自旋输运的规律,研究结果表明：总磁通为零条件下,铁磁电极磁化方向反平行时,双量子环与单量子环相比提高了自旋电子透射概率的平均值.铁磁电极磁化方向平行时,双量子环对提高自旋向下电子平均透射概率的效果更明显;双量子环受到Rashba自旋轨道耦合作用影响时,自旋电子的平均透射概率明显高于单量子环,即使再加上外加磁场的影响,透射概率较高这一特征依然存在;双量子环所含的δ势垒具有阻碍自旋电子输运的作用,随δ势垒强度Z的增大透射概率 关键词： 双量子环 Rashba自旋轨道耦合 透射概率 δ势垒')" href="#">δ势垒     

A spin switch device based on a triple quantum dots superlattice using the Dicke effect

Spin-dependent transport in a triple quantum dots superlattice system with a bridge coupling to two leads is studied. There exists an odd-even parity oscillation of spin polarization at the central dot level εc = 0 due to the spin-dependent Fano and Dicke effects induced by the quantum interference and the Rashba spin-orbit interaction. In the case of even numbers of triple quantum dots, the device can be used as a spin switch by tuning the energy difference h between the energies of the central and the lateral dots. These results may be helpful to design and fabricate practical spintronic devices.