Microwave photoresistance of a two-dimensional electron gas in a ballistic microbar

The effect of millimeter microwave radiation on the electron transport of two-dimensional (2D) ballistic microbars formed on the basis of individual GaAs quantum wells at a temperature of T = 4.2 K in magnetic fields B < 0.6 T has been investigated. Differences have been revealed in the magnetic field dependences of the microwave photoresistance of a 2D electron gas in Hall bars with a length L and a width W for the cases L, W > l _p and L, W < l _p , where l _p is the electron mean free path for momentum. The microwave photoresistance in macroscopic bars (L, W > l _p ) is a periodic alternating function of the inverse magnetic field; in microbars (L, W < l _p ), it is a periodic positive function of 1/B. The experimental results indicate that the mechanisms of the microwave photoresistance of a 2D electron gas are different for macroscopic and microscopic bars.     

Electrically stimulated motion of dislocations in a constant magnetic field

This paper reports on the results of investigations into the dislocation mobility in n-Si single crystals (N _d =5×10²⁴ m^?3) upon simultaneous exposure to electric (j=3×10⁵ A/m²) and magnetic (B≤1 T) fields. It is found that the introduction of dislocations (≈10⁹ m^?2) into dislocation-free silicon doped with phosphorus leads to the appearance of the paramagnetic component of the magnetic susceptibility. The paramagnetic component increases with an increase in the dopant concentration. Similar transformations in silicon account for the formation of magnetically sensitive impurity stoppers that respond to external magnetic perturbations. An analysis of the behavior of dislocations in electric and magnetic fields has revealed a parabolic dependence of the dislocation path length on the magnetic induction B. The effective charges and mobilities of dislocations are numerically calculated from the results obtained. A model is proposed according to which the observed increase in the dislocation mobility is associated with the decrease in the retarding power of magnetically sensitive stoppers due to a local change in the magnetic characteristics of the material and the spin-dependent reactions stimulated by a magnetic field.     

Resonance magnetoplasticity in ultralow magnetic fields

Resonance relaxation displacements of dislocations in NaCl crystals placed in crossed static and alternating ultralow magnetic fields in the electron paramagnetic resonance scheme are discussed. The Earth’s magnetic field B_Earth ≈ 50μT and other fields in the range of 26–261 μT are used as the static field. New strongly anisotropic properties of the effect have been revealed. Frequency spectra including numerous peaks of paths at low pump frequencies beginning with 10 kHz, as well as the quartet of equidistant peaks at high frequencies (~1.4 MHz at B=B_Earth), have been measured. The effect is also observed in the pulsed pump field with a resonance duration of ~0.5 μs. Resonance changes have been detected in the microhardness of ZnO, triglycine sulfate, and potassium hydrogen phthalate crystals after their exposure in the Earth’s magnetic field in the same electron paramagnetic resonance scheme.     

X-ray spectra and electronic band structure of nitrogen in Al<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Ga<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>N solid solid solutions

The electronic energy structure of the valence band and the x-ray absorption near edge structure (XANES) region of nitrogen in Al _x Ga_1?x N solid solutions and binary crystals of gallium nitride GaN and aluminum nitride AlN are calculated using the local coherent potential method and the cluster version of the muffin-tin approximation within the framework of the multiple scattering theory. It is demonstrated that the calculated electron densities of states correlate with the nitrogen K x-ray emission and nitrogen K x-ray absorption spectra. The electronic energy structure of the top of the valence band and the XANES region in Al _x Ga_1?x N solid solutions are compared with those in the binary crystals of the GaN and AlN nitrides, and an interpretation of their specific features is proposed. An analogy is drawn between the evolution of the electronic energy structure of the valence band and the XANES region in the alloys under investigation and the evolution of the electronic band structure in the Al _x B_1?x N and B _x Ga_1?x N alloys. General trends in the transformation of the structure and variations in properties of these alloys are discussed.     

Electronic energy structure and x-ray spectra of wide-gap AlN and BN crystals and B<Subscript>x</Subscript>Al<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>N solid solutions

The electronic energy structure of 2H and 3C AlN and BN crystals and B_xAl_1?xN solid solutions is calculated on the basis of the local coherent potential method using the cluster version of the MT approximation and the theory of multiple scattering. The features of the electronic structure of 2H-AlN crystals are compared with x-ray K and L absorption and emission spectra of aluminum and nitrogen. An interpretation of these features is given. The concentration dependences of the width of the upper subband of the valence band and the band gap in B_xAl_1?xN solid solutions (x = 0.25, 0.5, 0.75) are investigated. Charge transfer from aluminum to nitrogen atoms is shown to occur and increase with boron doping in both crystallographic modifications.     

Dislocation mobility in C<Subscript>60</Subscript> fullerite crystals

The dependences of the path of leading dislocations in indentation rosette rays on the load, the loading time, and the indentation temperature in the range 260 < T ≤ 373 K were studied for C₆₀ fullerite crystals. The dislocation mobility parameters are estimated: the exponent m characterizing the stress dependence of the dislocation velocity depends on the structural perfection of the crystal and ranges from 2.3 to 24.5, the activation energy for dislocation motion ΔH ₀ ? (0.4–0.5) eV, and the velocity of leading dislocations in indentation rosette rays v _l ? 10^?5?10^?4 cm/s. The data from micro-and macromechanical experiments are shown to agree with each other. The dislocation mobility is assumed to be controlled by the dislocation interaction with local barriers.     

Excitonic representation: Collective excitation spectra in the quantized Hall regime and spin biexciton

The excitonic representation method for describing collective excitations in the quantized Hall regime makes it possible to simplify analysis of the spectra and to obtain new results in the strong magnetic field limit, when E _C ??ω_c (ω_c is the cyclotron frequency and E_C is the characteristic Coulomb energy). For an integer odd filling factor ν greater than unity (i.e., for ν = 3, 5, 7,...), the spectra of one-cyclotron magneto-plasma excitations are calculated. For unit filling factor, the existence of a spin biexciton (bound state of two spin waves) corresponding to excitation with a spin change (δ_S = δ_Sz = ?2) is proved. The exact equation determining the ground state of the biexciton is derived in the thermodynamic limit N_Φ → ∞ (_N? is the system degeneracy). The exchange energy of this state is lower than for a single spin wave (with δ_S = δ_Sz = ?1) for the same value of the 2D wavevector q. In the limit q → ∞ corresponding to the decay of a biexciton into a pair of quasiparticles one of which is a trion with a spin of ?3/2, the energy is found to be lower than the energy (e²/εl _B )√π/2 required for exciting an electron-hole pair in the strictly 2D case (l_B is the magnetic length and ε is the dielectric constant), although this energy is higher than another “classical” result (e²/εl _B )√π/2, corresponding to the excitation of a skyrmion-antiskyrmion pair (|δS|=|δS _z |?1). The solution of the exact equation gives the trion binding energy and the activation gap for quasiparticles whose excitation corresponds to a change in the total spin by δS = δ S_z =?3. The energy of a spin biexciton is calculated for values of the wavevector such that ql _B ?1.     

<Emphasis Type="Italic">Ab initio</Emphasis> theory of the electronic structure and spectra of impurity <Emphasis Type="Italic">nl</Emphasis> ions

The fundamentals of the theory of the electronic structure of impurity clusters and the results of numerical calculations for the iron-, lanthanum-, and actinium-group ions in Me⁺ⁿ: [L]_k clusters are presented. The effects of the interionic distance and ligands in the Me⁺ⁿ: [L]_k clusters on the electronic structure of the nl ^N and nl^N?1n′l′ configurations of the 3d, 4f, and 5f ions are considered. The correspondence between the optical and x-ray spectra of different impurity crystals is also analyzed.     

Magnetic properties of Fe<Subscript>3</Subscript>C ferromagnetic nanoparticles encapsulated in carbon nanotubes

The low-temperature dependences of magnetic characteristics (namely, the coercive force H _c , the remanent magnetization M _r , local magnetic anisotropy fields H _a, and the saturation magnetization M _s ) determined from the irreversible and reversible parts of the magnetization curves for Fe₃C ferromagnetic nanoparticles encapsulated in carbon nanotubes are investigated experimentally. The behavior of the temperature dependences of the coercive force H _c (T) and the remanent magnetization M _r (T) indicates a single-domain structure of the particles under study and makes it possible to estimate their blocking temperature T _B = 420–450 K. It is found that the saturation magnetization M _s and the local magnetic anisotropy field H _a vary with temperature as ～T ^5/2.     

Magnetic characteristics of MgFe<Subscript>2</Subscript>O<Subscript>4</Subscript> nanoparticles obtained by glycine–nitrate synthesis

The magnetic properties of magnesium–iron spinel (MgFe₂O₄) powdered nanoparticles obtained by glycine–nitrate synthesis are investigated by X-ray phase analysis and the NMR method. According to the results of X-ray phase analysis, the average size of the crystalline part of nanoparticles of the powder under investigation is 45 ± 4 nm. Magnetization J is determined using the formula J = (B/μ0)–H, where B and H are the induction and strength of the magnetic field in the sample, which are measured by the NMR method. The magnetic characteristics of MgFe₂O₄ are as follows: specific saturation magnetization J_sat = 17.52 A m²/kg, specific residual magnetization J_r = 5.73 A m2/kg, coercive force H_c = 4600 A/m, and magnetic moment P_sat = 371 × 10^–20 A m² in the magnetic saturation state and P_r = 121 × 10^–20 A m² in the residual magnetization state.     

Die Winkelverteilung der Protonen der Reaktion B11 (d,p 0,1 B12 im Energiebereich von 0,7 ... 1,7 MeV

Angular distributions of the protons in this low-energy region have been measured by only few groups for obvious reasons: the energy of the emitted protons is very low. It will be shown that by using non-supported targets of B¹¹ with very little oxygen contamination the angular distributions can be obtained between approximately 5 and 165 degrees (cm.,p ₀-group) and between 20 and 165 degrees (cm.,p ₁) with high accuracy. The Butler-fits givel=1,r _B =5.2 fm forp ₀ andl=1,r _B =4.7 fm forp ₁. All angular distributions seem to exhibit strong participation of non-stripping mechanism.     

Untersuchung ferromagnetischen Materials mit polarisierter γ-Strahlung

Circularly polarized Co⁶⁰ γ-ray quanta have been used to measure the polarization-dependent part of the Compton effect on an iron-cobalt alloy. The asymmetryδ=(N ₊?N _?)/(N ₊+N _?) observed by inversion of the magnetic field direction was investigated as a function of the mean induction¯B between 1 and 23kI ^?. The experimental values of δ do not nearly drop as fast as¯B when going down from saturation to zero.     

Paradoxes of the influence of small Ni impurity additions in a NaCl crystal on the kinetics of its magnetoplasticity

A comparative study of magnetoplasticity in two types of NaCl crystals differing in impurity content only by a small Ni addition (0.06 ppm) in one of them, NaCl(Ni), has been carried out. Two methods of sample magnetic exposure were used: in a constant field B = 0–0.6 T and in crossed fields in the EPR scheme—the Earth’s field B_Earth (50 μT) and a variable pumping field \(\tilde B( \sim 1 \mu T)\) at frequencies ν ~ 1 MHz. In the experiments in the EPR scheme, the change of the field orientation from \(\tilde B \bot B_{Earth}\) to \(\left. {\tilde B} \right\|B_{Earth}\) led to almost complete suppression of the effect in the NaCl(Ni) crystals and reduced only slightly (approximately by 20%) the height of the resonance peak of dislocation mean paths in the crystals without Ni, with the amplitude of the mean paths in NaCl(Ni) in the orientation \(\tilde B \bot B_{Earth}\) having been appreciably lower than that in NaCl. In contrast, upon exposure to a constant magnetic field, a more intense effect was observed in the crystal with Ni. The threshold pumping field amplitude \(\tilde B\), below which the effect is absent under resonance conditions, for the NaCl(Ni) crystals turned out to be a factor of 5 smaller than that for NaCl, while the thresholds of a constant magnetic field coincide for both types of crystals. All these differences are discussed in detail and interpreted.     

Low-Temperature Transport Properties of Lanthanum Hexaboride La<Subscript>1–<Emphasis Type="Italic">x</Emphasis></Subscript>Ce<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>B<Subscript>6</Subscript> Single Crystals

Resistivity (ρ), thermal conductivity (k) and Seebeck coefficient (S) of La_1–xCe_xB₆ single crystals with various concentrations of cerium Ce ions was measured in a wide temperature range 3?300 K. The obtained data were analyzed in the framework of the Coqblin–Shrieffer model. The contributions of scattering of carriers on magnetic ions Ce for all transport parameters ρ(T), k(T), S(T) are revealed. Strong dependence of the magnetic scattering on concentration of the cerium ions are identified. The anomalous behavior of the transport parameters ρ(T), k(T), S(T) in the region near 30 K is attributed to the Δ ~ 30 K splitting of Г₈ level.     

The effect of impurity on temperature variations in the refractive indices and thickness of TGS crystals

Temperature dependences of optical path difference δΔ_? and the relative changes in thickness δl_?/l of TGS crystals doped with L-valine are studied. Temperature dependences of the relative changes in refractive indices δn_?/(n–1) are calculated. The anisotropy coefficients of refractive indices А_n–1(Т) and linear expansion Аα(Т) are calculated, and a characteristic minimum of these dependences is found near the phase transition temperature.     

Relaxation Kinetics of the Microhardness of KDP Crystals after Their Exposure to a Magnetic Field

It has been shown that potassium dihydrogen phosphate crystals change their microhardness reversibly after their exposure to a magnetic field of B = 0.8 or 1.2 T for t_m = 7–90 min. It has been found that the magnetic effect can be conveniently characterized by the quantity B²t_m, because the variation of the parameters conserving B²t_m=const does not change the result. At B²t_m < 10 T² min, the effect is almost absent. Above this threshold, the amplitude of changes in the microhardness increases and approaches a constant value of ~10% at B²t_m ≈ 19 T² min. The responses of samples of the same crystal from the faces of the prismatic and pyramidal growth sectors to exposure are different. In the former case, they soften; in the latter case, the hardening stage follows the softening stage. However, in both cases, the microhardness returns to the initial value. At B²t_m values from 19 to 37 T² min, the amplitudes and durations of the effect do not change, but in the narrow range of 37–43 T² min, the lifetime of the modified state increases sharply with transition to a new level: “sharp” peaks with a half-width of ~2 days are transformed to trapezoids with the width of the horizontal side of ~1–2 weeks. A physical scheme of the observed effects has been proposed.     

Hall coefficient in heavy fermion metals

Experimental studies of the antiferromagnetic (AF) heavy fermion metal YbRh₂Si₂ in a magnetic field B indicate the presence of a jump in the Hall coefficient at a magnetic-field tuned quantum state in the zero temperature limit. This quantum state occurs at B ≥ B_c0 and induces the jump even though the change of the magnetic field at B = B_c0 is infinitesimal. We investigated this by using the model of heavy electron liquid with the fermion condensate. Within this model, the jump takes place when the magnetic field reaches the critical value B_c0 at which the ordering temperature T_N(B = B_c0) of the AF transition vanishes. We show that at B → B_c0, this second order AF phase transition becomes the first order one, making the corresponding quantum and thermal critical fluctuations vanish at the jump. At T → 0 and B = B_c0 the Grüneisen ratio as a function of the temperature T diverges. We demonstrate that both the divergence and the jump are determined by the specific low temperature behavior of the entropy \(S(T) \propto S_0 + a\sqrt T + bT\) with S₀; a and b are temperature independent constants.     

Zur Klassifikation der Zustände des 5-dimensionalen harmonischen Oszillators

A classification of the eigenstates of the harmonic quadrupole oscillator is given within the framework of the Lie-AlgebraB ₂ ofR(5). There still exists the problem of complete classification, since the multiplicityd _v (l ₂) for seniority numbersv≧6 may be greater than one. For these multiplicitiesd _v (l ₂) easily managable recursion formulae are derived and therefore their explicit calculation for arbitraryv andl ₂ is easily possible.     

Specific features of the reflection of infrared radiation by crystalline dielectrics in a magnetic field

Magnetic-field-induced variations in the reflection spectra R(λ) of the crystalline dielectrics Al₂O₃, LiF, and MgO in the infrared band (λ = 2.5–25 μm) are investigated. It is found that the reflection spectra exhibit specific features in the neighborhood of wavelengths corresponding to the excitation of optical phonon modes in the above-mentioned crystals and that a magnetic field causes an appreciable variation in the reflectivity at these wavelengths. To qualitatively describe the effect of a magnetic field on the reflection of light, the magnetoreflection spectra ΔR/R are investigated. The spectra ΔR/R exhibit sharp peaks in the neighborhood of wavelengths at which the materials under investigation are characterized by minimal reflectivity. The values of ΔR/R for p-polarized infrared radiation in a magnetic field of about 12 kOe amount to about 0.5% for Al₂O₃ at λ ≈ 9.6 μm, 7% for LiF at λ ≈ 11.1 μm, and 0.07% for MgO at λ ≈ 11.7 μm.     

Self-similar distribution in “giant” magnetic flux creep

The problem of magnetic field penetration into the half-space is considered in parallel geometry in an external magnetic field increasing with time in accordance with the law B(0, t, τ₀ = B _{c 1} (1 + t/τ₀) ^m , m ≥ 0, t ≥ 0 (τ ₀ is the time of magnetic flux redistribution and B _{c 1} is the lower critical field). It is assumed that the flow of vortices is thermally activated in the “giant” creep mode (i.e., for weak pinning creep and high temperatures). A model equation is derived for describing the magnetic flux evolution. Analytic formulas are obtained for the depth and velocity of magnetic field penetration. It is shown that the giant creep regime is stable for 0 ≤ m ≤ 1/2.