倍增型有机光电探测器的研究进展

介绍了倍增型有机光电探测器的发展、工作机理、性能调控及相关的应用探索. 2015年张福俊课题组以单载流子传输通道的给受体混合(质量比约为100:1)薄膜为有源层，率先报道了界面附近受陷电子诱导空穴隧穿注入的倍增型有机光电探测器，并抑制了器件的暗电流密度.通过优化有源层厚度调控了界面附近受陷电荷的体分布，制备出超窄响应的倍增型有机光电探测器，并提出载流子注入窄化的新概念.利用三元策略及双层策略，制备出了宽响应倍增型有机光电探测器.利用光子俘获层调控器件的响应范围，以及利用倍增层获得了较大的外量子效率，将二极管型与倍增型器件的优势集中在一个器件中.引入光学调控层或将宽带隙材料引入有源层中，调控界面附近受陷电子分布，优化了器件的光谱形状，进而制备出响应光谱宽且平的倍增型有机光电探测器.将制备的倍增型有机光电探测器应用到心率监测、单像素成像及光开关等领域，取得较好的应用成果.     

倍增型有机光电探测器的研究进展

介绍了倍增型有机光电探测器的发展、工作机理、性能调控及相关的应用探索.2015年张福俊课题组以单载流子传输通道的给受体混合(质量比约为100∶1)薄膜为有源层,率先报道了界面附近受陷电子诱导空穴隧穿注入的倍增型有机光电探测器,并抑制了器件的暗电流密度.通过优化有源层厚度调控了界面附近受陷电荷的体分布,制备出超窄响应的倍...     

倍增型窄带响应有机光电探测器的界面调控

倍增型窄带响应有机光电探测器, 具有响应窗口窄且外量子效率(EQE)高等优势, 在需要检测特定波长光的应用场景受到广泛关注. 此类器件的有机光活性层由给体和受体组成, 其中受体在电极界面的浓度分布显著影响窗口半峰宽和EQE, 因此其精准调控至关重要. 本工作中, 将有机光活性层中的给体和受体分步成膜, 利用热退火下给受体互扩散特性, 实现了受体在电极界面的浓度分布的可控调节. 相比传统的给体和受体共混成膜的器件, 给体和受体分步成膜的器件通过优化给受体比例和热退火条件, 展现出了更加优异的器件性能.     

非“三明治”结构的分子基光电器件

传统的分子材料光电器件如太阳能电池和有机发光二极管通常采用"三明治"型垂直结构.器件通常由透明底电极、薄膜活性层和顶接触电极构成.该结构优化了光与半导体的相互作用以及载流子的注入和收集,实际应用广泛.近些年,为了降低透明电极的使用成本以及更好地实现非薄膜形态纳米半导体材料的器件构筑,一些非"三明治"结构的有机光电器件也取得了很大进展:发展出了具有微米、纳米电极结构的光伏器件、光电导器件、光晶体管器件、纳米间隙电极器件等,拓展了分子基光电材料的应用研究,与传统夹心型二极管器件相互补充、相互完善.本文主要聚焦在各种非"三明治"结构有机光电器件的构筑与功能化,对有代表性的研究成果进行了总结与评述,并对其未来的发展进行了展望.     

高效率有机太阳能电池的界面工程研究

有机太阳能电池(OSC)为典型的三明治结构,是以共轭类有机化合物为活性层材料将太阳光转换为电能,通过两个电极输出电流。这些有机物具有来源广、质量轻和可再生等优点,使得有机太阳能电池在清洁新能源领域备受关注。当前研究的焦点仍然是提高电池的光电转换效率,主要通过改善活性层材料、优化器件结构和界面修饰等途径。本文重点介绍了作者课题组在界面工程方面所做的代表性工作,通过引入含磺酸基团或羧酸基团的超支化结构的聚合物阴极修饰层材料,获得了高效的OSCs;合成了新颖的非共轭有机小分子电解质修饰层,制备了高达10.02%效率的单结正型OSCs。此外,还研究了简单的极性溶剂处理,如甲醇能够优化活性层形貌,提高电池器件的性能。     

电极材料对NPB/Alq3有机电致发光器件性能的影响

采用不同材料作为有机电致发光器件(OELDs)的电极, 制备了基本结构为[阳极/NPB(40 nm)]/Alq3(50 nm)/阴极]的异质结双层器件, 并通过改变OELDs器件的阴极或阳极来研究电极材料对器件光电性能的影响. 研究结果表明, 各器件电流-电压(I-V)关系的基本特征与陷阱电荷限制电流(TCLC)机制的拟合情况相符. 由于有机材料本身能级的无序性以及载流子迁移率对温度和电场的依赖性, 不同电极的载流子注入能力与其功函数并无直接关系. 双层器件中由于空穴传输层的引入, 使得载流子复合区域位于有机层异质结界面处, 降低了金属阴极对激子的猝灭作用, 从而大大提高了器件性能. 此外, 金属电极OLEDs器件结构具有的微腔效应会导致发射光谱的位移和谱峰宽度变窄, 这表明通过对金属电极的表面改性和优化可使器件性能超过常规结构的器件.     

主链含噻唑单元的新型聚噻吩衍生物的合成与光伏性能

聚噻吩(PT)衍生物由于简单易合成和较好的光电性能,被广泛运用于有机太阳能电池(OSCs)中,但PT较高的能级限制了其在非富勒烯类OSCs的应用。为了降低PT的能级结构,本研究将噻唑单元引入到聚噻吩主链中,设计并合成了新型聚合物给体材料PBTzCl-T。通过紫外-可见吸收光谱、电化学循环伏安法及密度泛函理论(DFT)计算等对聚合物的结构、光学和电学性能进行了表征,并对制备的光伏器件进行了光电性质研究。结果表明：噻唑的引入能够有效降低聚合物的HOMO和LUMO能级,从而提高光伏器件的开路电压。PBTzCl-T在不同溶剂中表现出不同的预聚集行为,进而影响聚合物给受体界面处的电荷转移能力和活性层形貌,导致光伏器件的短路电流和填充因子变化。     

低温原子层沉积封装技术在OLED上的应用及对有机、钙钛矿太阳能电池封装的启示

有机半导体光电器件在基础研究和工业应用方面进展迅速, 相关方向已经成为一个较为成熟的新兴领域. 然而, 这类器件中的关键有机材料存在对空气中的水、氧十分敏感的问题, 严重影响了器件的长期工作性能. 除了选择合适的传输层材料、界面层结构, 利用界面工程提高器件水氧耐受能力之外, 对器件进行可靠的封装是隔绝空气中水、氧的另一个有效手段. 原子层沉积(atomic layer deposition, ALD)是一种近乎完美的薄膜沉积封装技术, 这种技术所生长的薄膜具有独特的层-层(layer by layer)生长特性, 而且可以在低温下沉积出厚度可控、重复率高、均匀致密的薄膜, 使得该技术在半导体行业已经得到广泛应用. 在此, 我们将回顾ALD封装技术在有机发光二极管(organic light emitting diode, OLED)、有机太阳能电池(organic photovoltaics, OPV)和钙钛矿太阳能电池(perovskite solar cell, PSC)中的应用, 并进一步讨论现阶段应用于OLED的相对比较成熟的ALD封装技术, 及其对OPV和PSC封装的启示性意义.     

阴极界面修饰层改善平面p-i-n型钙钛矿太阳能电池的光伏性能

有机/无机杂化金属卤化物钙钛矿半导体材料结合了有机材料良好的溶液可加工性以及无机材料优越的光电特性,近几年受到了热捧,成为太阳能电池领域一颗耀眼的明星. 伴随着钙钛矿薄膜结晶过程和形貌的优化、器件结构的改进以及电极界面材料的开发,这类有机/无机杂化金属卤化物钙钛矿太阳能电池的光电转换效率从最初的3.8%迅速提高到目前最高的22.1%. 其中界面工程在提升器件性能上发挥着极其重要的作用. 本文总结了平面p-i-n型钙钛矿太阳能电池中阴极界面修饰层（CBL）的研究进展. CBL从材料上讲可分为无机金属氧化物、金属或金属盐以及有机材料,从构成上讲可分为单层CBL、双层CBLs以及共混型CBL. 本文对这些类型的CBL分别给予详细的介绍. 最后,我们归纳出CBL在改善器件效率和稳定性上所起的作用以及理想CBL所应满足的要求,希望能为以后阴极界面修饰材料的设计提供一定的借鉴.     

表面双重后处理方法提升三元NiMgO半导体界面层及其有机太阳能电池的性能※

采用溶胶-凝胶法制备了Mg掺杂氧化镍(NiO)的三元氧化物半导体NiMgO薄膜, 研究了不同表面后处理方法对薄膜结构、性质和能级的影响. 利用NiMgO薄膜作为新型空穴传输界面层构建了非富勒烯有机太阳能电池, 研究了器件性能变化及其物理机制. 结果表明, 以未表面处理NiMgO为界面层时, 器件的能量转化效率(PCE)为5.90%; 使用紫外-臭氧(UVO)表面后处理的NiMgO界面层, 器件PCE大幅提升至12.67%. 而NiMgO在UVO处理前进行润洗, 可以去除表面残留物, 薄膜变平整且透光率增加. 因此, 采用润洗与UVO结合的表面双重后处理新策略后, 器件的开路电压不变, 但短路电流密度和填充因子分别提高到23.48 mA•cm^–2和64.29%, 最终PCE达到13.17%. 该研究为半导体氧化物薄膜及器件的优化提供了一条有效途径.     

Organic photoresponse materials and devices

Organic photoresponse materials and devices are critically important to organic optoelectronics and energy crises. The activities of photoresponse in organic materials can be summarized in three effects, photoconductive, photovoltaic and optical memory effects. Correspondingly, devices based on the three effects can be divided into (i) photoconductive devices such as photodetectors, photoreceptors, photoswitches and phototransistors, (ii) photovoltaic devices such as organic solar cells, and (iii) optical data storage devices. It is expected that this systematic analysis of photoresponse materials and devices could be a guide for the better understanding of structure-property relationships of organic materials and provide key clues for the fabrication of high performance organic optoelectronic devices, the integration of them in circuits and the application of them in renewable green energy strategies (critical review, 452 references).     

二维半导体材料纳米电子器件和光电器件

近年来,随着各领域对微电子器件集成度及性能要求的不断提高,发展基于二维半导体材料的新型高性能功能性器件成为了突破当前技术瓶颈的重要环节和关键方向。目前,作为新型二维半导体材料的代表,二维过渡金属二硫化物、二维黑磷以及范德瓦尔斯异质结凭借其在电学、热学、机械、光学等方面的优异性能已经成为了发展高性能纳米电子器件和光电器件的最具潜力的材料之一。在本综述中,首先概述了几种用于纳米器件的常见二维材料,分析了材料的结构、性能及其在纳米器件中的应用,其次重点对基于过渡金属二硫化物、黑磷以及由其衍生的范德瓦尔斯异质结的纳米电子器件和光电器件的最新研究进展进行讨论,最后对目前二维半导体纳米器件所面临的挑战以及未来的发展方向进行总结及分析,从而为未来发展高性能功能性纳米器件提供支持。     

Electrically Stimulated Band Alignment Transit in Black Phosphorus/ β-Ga2O3 Heterostructure Dual-band Photodetector

In recent decades, dual-band photodetectors have received widespread attention due to better target identification, which are considered as the development trend of next generation photodetectors. However, the traditional dual-band photodetectors based on heteroepitaxial growth, superlattice and multiple quantum well structures are limited by complex fabrication process and low integration. Herein, we report a UV/IR dual-band photodetector by integrating ultra-wide gap β-Ga₂O₃ and narrow-gap black phosphorous(BP) nanoflakes. A vertical van der Waals (vdW) heterostructure is formed between BP and β-Ga₂O₃ by mechanically exfoliated method integrated without the requirement of lattice match. The heterostructure devices show excellent rectification characteristics with high rectifying ratio of ca. 10⁶ and low reverse current around pA. Moreover, the device displays obvious photoresponse under UV and IR irradiations with responsivities of 0.87 and 2.15 mA/W, respectively. We also explore the band alignment transit within the heterostructure photodetector at different bias voltages. This work paves the way for fabricating novel dual-band photodetectors by utilizing 2D materials.     

Imide-Functionalized Polymer Semiconductors

Imide-functionalized π-conjugated polymer semiconductors have received a great deal of interest owing to their unique physicochemical properties and optoelectronic characteristics, including excellent solubility, highly planar backbones, widely tunable band gaps and energy levels of frontier molecular orbitals, and good film morphology. The organic electronics community has witnessed rapid expansion of the materials library and remarkable improvement in device performance recently. This review summarizes the development of imide-functionalized polymer semiconductors as well as their device performance in organic thin-film transistors and polymer solar cells, mainly achieved in the past three years. The materials mainly cover naphthalene diimide, perylene diimide, and bithiophene imide, and other imide-based polymer semiconductors are also discussed. The perspective offers our insights for developing new imide-functionalized building blocks and polymer semiconductors with optimized optoelectronic properties. We hope that this review will generate more research interest in the community to realize further improved device performance by developing new imide-functionalized polymer semiconductors.     

水/醇溶共轭聚合物界面材料及其在光电器件中的应用

相对于传统的无机半导体器件,以有机半导体(特别是聚合物半导体)材料为基础的有机光电器件,可采用与传统印刷技术(例如喷墨打印、卷对卷印刷等)相结合的溶液加工方式制备低成本、大面积、柔性光电器件,因而成为广泛关注的焦点,并得到了快速发展.实现溶液加工的高效有机光电器件的一个关键问题是界面问题——如何避免溶液加工时有机层间的互溶以及如何实现可印刷稳定金属电极的高效电子注入等.水/醇溶性共轭聚合物的迅速发展为解决溶液加工多层有机光电器件所面临的界面问题提供了有效手段.研究发现,水/醇溶共轭聚合物不但可以有效避免溶液加工多层器件中的界面互溶,而且还可与高功函数的稳定金属发生界面偶极相互作用而增强其电子注入,从而解决了高功函数稳定金属电子注入的难题,为实现全溶液加工的高效印刷有机光电器件提供了可行的方案.本文介绍了近年来本课题组在水/醇溶共轭聚合物阴极界面材料及器件应用方面的研究进展,并对水/醇溶共轭聚合物阴极界面材料在聚合物发光二极管和聚合物太阳电池中的工作机理进行了探讨.     

硫硒化亚锗光电探测器的制备及光电性能

采用微机械剥离法得到横向尺寸约为12 μm的硫硒化亚锗(GeS_0.5Se_0.5)纳米片, 以铬/金(Cr/Au)为接触电极, 首次制备得到GeS_0.5Se_0.5光电探测器, 并探究了其光电性能. 结果表明, 剥离所得的纳米片具有良好的结晶质量, 硫和硒在纳米片中分布均匀, 光学带隙为1.3 eV; 该光电探测器在515 nm光激发下最大探测能力达到4.52×10¹³ Jones, 最高响应度为1.15×10⁴ A/W, 外部量子效率为2.79×10⁶%, 展现出非常高效、 快速和稳定的光响应能力.     

共轭聚合物光电探测器研究进展

相较于传统无机半导体材料,有机共轭聚合物半导体具有响应光谱高度可调、质量轻、可大面积制备、与柔性基板兼容等优点,其作为光活性层在下一代可穿戴光电探测器的应用中显示出巨大的应用潜力.共轭聚合物具有多样化的结构设计,不同的分子结构对其光物理化学性能可进行灵活调控,进而展现出各具特色的光电特性.同时,通过结构优化亦可赋予共轭...     

Enhanced Gain in Organic Photodetectors Using the Polymer with Singlet Open-Shell Ground State

Photodetectors are critical components in intelligent optoelectronic systems, and photomultiplication-capable devices are essential for detecting weak optical signals. Despite significant advances, developing photomultiplication-type organic photodetectors with high gain and low noise current simultaneously remains challenging. In this work, a new conjugated polymer PDN with singlet open-shell ground state is introduced in active layers for electron capture, and the corresponding PDN-based photodetectors exhibited an enhanced photoelectric gain and decreased dark current density at a low forward bias. At 1.5 V, the PDN-based ternary photodetector has the external quantum efficiency (EQE) up to 2552.3 % and the specific detectivity of 1.4×10¹⁴ Jones at 710 nm calculated by the measured noise current, with the gain 22 times higher than that of the control group. This study provides an approach for exploiting polymers with singlet open-shell ground state to enhance the gain of organic photodetectors.     

Band‐Edge Luminescence from Oxide and Halide Perovskite Semiconductors

Because perovskite crystals exhibit unique magnetic, conductive, and optical properties, they have been the subject of many fundamental investigations in various research fields. However, investigations related to their use as optoelectronic device materials are still in their early days. Regarding oxide perovskites, which have been investigated for a long time, the efficiency of photoluminescence (PL) induced by band‐to‐band transitions is extremely low because of the localized nature of the carriers in these materials. On the other hand, halide perovskites exhibit a highly efficient band‐edge PL attributable to the recombination of delocalized photocarriers. Therefore, it is expected that this class of high‐quality materials will be advantageous for optoelectronic devices such as solar cells and light‐emitting diodes. In this Minireview, we discuss various aspects of the PL properties and carrier dynamics of SrTiO₃ and CH₃NH₃PbX₃ (X=I, Br), which are representative oxide and halide perovskites.     

Recent developments in metastable dilute-N III–V semiconductors

Metastable III–N–V semiconductors are a subgroup of a recently discovered new class of III–V and II–VI semiconductor alloys. Band gap engineering is achieved in these alloys by incorporating into a semiconductor host (e.g. GaAs) small amounts of an isoelectronic impurity (e.g. N) whose electronic levels are resonant with the host conduction band. Due to the large differences in size and electronegativity between the impurity and the host anion it substitutes, the band structure of the host is strongly perturbed and modified. The band structure formation of these alloys is totally different from that of conventional amalgamation-type semiconductor alloys such as (Al,Ga)As etc. Exemplarily, this review focuses on Ga(N,As) and (Ga,In)(N,As), which are currently the most prominent III–N–V alloys due to their application in optoelectronic devices. The review addresses electronic structure investigations ranging from bulk epitaxial layers to laser device structures. In particular, the band information process and the band structure of Ga(N,As) are described. Consequences such as the strong correlation between local N environment and global band gap, the metastability of quaternary (Ga,In)(N,As), and strong disorder and localization effects are discussed. Possible ways of parameterizing the band structure in a k·P-like fashion accounting for the effects of nitrogen are presented and employed to describe the electronic states of (Ga,In)(N,As)-based quantum wells. Furthermore, it is shown how (Ga,In)(N,As)/GaAs quantum wells in the active region of vertical-cavity surface-emitting laser structures can be characterized non-invasively.