Isotropic positive magnetoresistance in Co-Al<Subscript>2</Subscript>O<Subscript>n</Subscript> nanocomposites

The magnetotransport properties of Co_x(Al₂O_n)_{100 ? x} nanocomposites were studied in a wide concentration range (34 ≤ x ≤ 74 at %). Negative tunnel magnetoresistance reaching 6.5% in a field of 10 kOe was established. In addition to the negative magnetoresistance, the Co_x(Al₂O_n)_{100 ? x} composites were found to exhibit positive magnetoresistance reaching 1.5% in fields of 10 kOe over the concentration range corresponding to the percolation threshold (54 ≤ x ≤ 67 at %). The positive magnetoresistance is assumed to be due to the simultaneous existence in the composite structure of clusters and individual nanoparticles characterized by different values of the magnetic anisotropy and due to the dipole-dipole interaction between the clusters and nearest neighbor particles.     

Effect of annealing temperature on the structural reorganization of Eu<Superscript>3+</Superscript> optical centers in Al<Subscript>2</Subscript>O<Subscript>3</Subscript>-Eu<Subscript>2</Subscript>O<Subscript>3</Subscript>-BiOF gel films

The dependence of the structural reorganization of Eu³⁺ optical centers in Al₂O₃-Eu₂O₃-BiOF films on the annealing temperature has been investigated. It is shown by the methods of crystal field theory and computer simulation that the increase in the annealing temperature from 700 to 1100 °C leads to removal of bismuth from Eu-O-Bi complex centers with the C _3V symmetry in the Al₂O₃ structure and the change in symmetry from D ₃ to O _h for a large fraction of EuAlO₃ centers.     

Properties of an Al<Subscript>2</Subscript>O<Subscript>3</Subscript>/Si interface

The phase chemical composition of an Al₂O₃/Si interface formed upon molecular deposition of a 100-nm-thick Al₂O₃ layer on the Si(100) (c-Si) surface is investigated by depth-resolved ultrasoft x-ray emission spectroscopy. Analysis is performed using Al and Si L_{2, 3} emission bands. It is found that the thickness of the interface separating the c-Si substrate and the Al₂O₃ layer is approximately equal to 60 nm and the interface has a complex structure. The upper layer of the interface contains Al₂O₃ molecules and Al atoms, whose coordination is characteristic of metallic aluminum (most likely, these atoms form sufficiently large-sized Al clusters). The shape of the Si bands indicates that the interface layer (no more than 10-nm thick) adjacent to the substrate involves Si atoms in an unusual chemical state. This state is not typical of amorphous Si, c-Si, SiO₂, or SiO_x (it is assumed that these Si atoms form small-sized Si clusters). It is revealed that SiO₂ is contained in the vicinity of the substrate. The properties of thicker coatings are similar to those of the 100-nm-thick Al₂O₃ layer and differ significantly from the properties of the interfaces of Al₂O₃ thin layers.     

Optical studies of phase transitions in the (NH<Subscript>4</Subscript>)<Subscript>3</Subscript>Ti(O<Subscript>2</Subscript>)F<Subscript>5</Subscript> crystal

Polarization-optical study of twinning and measurements of the Raman spectra and birefringence in oxyfluoride (NH₄)₃Ti(O₂)F₅ were carried out over the temperature range 90–350 K. Phase transitions were detected at temperatures T ₀₁ = 266 K (second-order transition) and T ₀₂ = 225 K (first order). It is assumed that the crystal symmetry is changed as follows: Fm3m ? I4/mmm ? I4/m. Anomalies of the spectral parameters are established in the frequency range of internal vibrations of ammonium ions and Ti(O₂)F₅ complexes. An analysis of the results shows that the transition at T ₀₁ is likely due to small shifts of the tetrahedral groups from their position on the triad axis and that the transition at T ₀₂ is due to fluorine-oxygen ordering of Ti(O₂)F₅ complexes.     

Mobility and diffusion of oxygen isotopes in YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>6+<Emphasis Type="Italic">x</Emphasis></Subscript>: Monte carlo simulation

The self-diffusion (D₀) and isotope diffusion (D*) coefficients of oxygen in YBa₂Cu₃O_6+x are calculated as functions of the temperature (600–1200 K) and the oxygen content (0<x<1). The Monte Carlo simulation is performed with due regard for both the interaction of oxygen ions at lattice sites in the basal planes of YBa₂Cu₃O_6+x and the interaction between a jumping ion at a saddle point and the environment. Equilibrium thermodynamic characteristics (including the phase diagram and the heat capacity) are calculated in terms of the Hamiltonian of interaction between oxygen ions at the lattice sites. It is found that an increase in the oxygen content leads to a decrease in the diffusion coefficients D₀ and D*, an increase in the effective activation energies for diffusion by 0.3–0.5 eV, and a decrease in the Haven ratio from 1 to ～0.5.     

The oxygen content and its ordering in the chain planes in fine-grained HTSC YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript>

A comparative analysis of the results of the X-ray and Mösbauer studies of the high-temperature superconductor (HTSC) YBa₂Cu₃O _y and YBa₂Cu_{3 ? x} ⁵⁷Fe _x O _y (x = 0.015, T _c ≈ 91.5 K) samples with different average grain sizes <D> in the micron and submicron ranges has been performed. The regularities in the change in the lattice parameter c and in the degree of occupation of different oxygen sites in the CuO_δ chain planes taking place at the decrease in <D> have been studied. The quantitative interrelation between the parameter c and the oxygen content δ in the CuO_δ planes exceeding the amount of the mobile oxygen due to the interplane oxygen redistribution is established.     

Charge storage behavior of nanostructures based on SiGe nanocrystals embedded in Al<Subscript>2</Subscript>O<Subscript>3</Subscript> matrix

The charge storage behavior of nanostructures based on Si_1?x Ge _x (0 ≤ x ≤ 1) nanocrystals (NCs) in an Al₂O₃ matrix was investigated. The structures have been grown by RF magnetron sputtering and subsequently annealed at temperatures ranging from 700 °C to 1000 °C for 30 min in nitrogen ambient. The stoichiometry of the SiGe NCs and the alumina crystalline structure were found to be significantly dependent on the RF power and the annealing temperature. The sizes of the SiGe NCs and their distribution were investigated by grazing incidence small angle X-ray scattering (GISAXS). The capacitance-voltage (C-V) and conductance-voltage (G-V) measurements were performed to investigate the charge trapping characteristics of the memory structures. The C-V hysteresis width depends on variations in the crystalline structure resulting from different annealing temperatures. It is also shown that charge injection is governed by the Fowler-Nordheim tunnel mechanism for higher electric fields.     

Magnetic properties of the Gd<Subscript>2</Subscript>V<Subscript>0.67</Subscript>Mo<Subscript>1.33</Subscript>O<Subscript>7</Subscript> and Y<Subscript>2</Subscript>VMoO<Subscript>7</Subscript> pyrochlore compounds

It is demonstrated that 50% substitution of vanadium for molybdenum in the pyrochlore lattice of the complex oxide Y₂(V _x Mo_{1 ? x} )₂O₇ results in a transition from the spin-glass ground state (at x = 0) to the ferromagnetic state in Y₂VMoO₇ (a = 10.1645(2) Å, T _C = 55 K). The Gd₂V_0.67Mo_1.33O₇ compound (a = 10.2862(3) Å) is a ferromagnet with T _C (84 K) exceeding that of undoped Gd₂MnO₂O₇.     

Influence of electromagnetic radiation on the phase composition of clustered CN<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> films

The effect of white and UV radiation on the phase composition of amorphous CN _x films are studied by X-ray diffraction analysis and visible-range spectroscopy. The films have variable-range atomic order and consist of amorphous graphite clusters (30 Å) crystalline clusters (50–100 Å) of graphite, diamond, and carbon nitride phases; and intercluster medium with long-range (1–2 Å) atomic order. It is shown that irradiation of the films by white light facilitates the growth of fine graphite clusters. Irradiation by UV light suppresses the growth of the graphite and carbon nitride phases, favoring the growth of the diamond phase (1.5%). It is demonstrated that a change in the mesoscopic phase composition of the CN _x films causes a change in the energy gap width in the visible range from E _g = 0.75 eV for the films irradiated by white light to E _g = 1.75 eV for those exposed to UV radiation.     

Effect of low-temperature annealing on the magnetization curve of YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>6 + <Emphasis Type="Italic">x</Emphasis></Subscript> ceramics

The effect of low-temperature annealing on the magnetization curve of YBa₂Cu₃O_{6 + x} ceramics in the superconducting state (x ≈ 0.9) is investigated. When the annealing time is fairly long, the field dependence of magnetic moment M exhibits a feature in the form of a plateau, where the value of M remains almost constant. The evolution of this feature in the magnetization curves of annealed samples with annealing time and temperature is studied. It is assumed that low-temperature annealing gives rise to metastable ferromagnetic clusters in YBa₂Cu₃O_{6 + x} ceramics, the contribution of which to the magnetic moment accounts for the feature in the magnetization curves of the annealed samples.     

Structural and magnetic phase transformations in the BiFeO<Subscript>3</Subscript>-CaFe<Subscript>0.5</Subscript>Nb<Subscript>0.5</Subscript>O<Subscript>3</Subscript> system

The crystal structure and magnetic properties of the Bi_{1 ? x} Ca _x Fe_{1 ? x/2}Nb _x/2O₃ system were studied. It is shown that, at x ≤ 0.15, the unit-cell symmetry of solid solutions is rhombohedral (space group R3c). Solid solutions with x ≥ 0.3 have an orthorhombic unit cell (space group Pbnm). The rhombohedral compositions are antiferromagnetic, while the orthorhombic compositions exhibit a small spontaneous magnetization due to Dzyaloshinski?-Moriya interaction. In CaFe_0.5Nb_0.5O₃, the Fe³⁺ and Nb⁵⁺ ions are partially ordered and the unit cell is monoclinic (space group P2₁/n). In the concentration range 0.15 < x < 0.30, a two-phase state (R3c + Pbnm) is revealed.     

Low-temperature thermal-expansion anomaly in Bi<Subscript>2</Subscript>Sr<Subscript>2</Subscript>CuO<Subscript>6</Subscript>

Single-crystal samples of the Bi_{2 + x}Sr_{2 ? x ? y}Cu_{1 + y}O_{6 + δ} system revealed anomalous (negative) thermal expansion in the temperature range 10–20 K. Magnetic fields of 1–3 T were found to strongly affect the position and width of the anomaly region. A thermal-expansion singularity was detected at temperatures T≈30–50 K, which may be related to the formation of a pseudogap.     

Cluster-Type Structure of Amorphous Smooth Hydrocarbon CD<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> Films (<Emphasis Type="Italic">x</Emphasis> ~ 0.5) from T-10 Tokamak

Structure of smooth hydrocarbon CD _x films with a high deuterium ratio x ~ 0.5 redeposited from T-10 tokamak D-plasma discharges (NRC Kurchatov Institute, Moscow) has been studied. For the first time, small and wide angle X-ray scattering technique using synchrotron radiation and neutron diffraction have been employed. A fractal structure of CD _x films is found to consist of mass-fractals with rough border, surface fractals (with rough surface), plane scatterers and linear chains forming a branched and highly cross-linked 3D carbon network. The found fractals, including sp² clusters, are of typical size ~1.60 nm. They include a C₁₃ fragment consisting of three interconnected aromatic rings forming a minimal fractal sp² aggregate 9 × C₁₃. These graphene-like sp² clusters are interconnected and form a 3D lattice which can be alternatively interpreted as a highly defective graphene layer with a large concentration of vacancies. The unsaturated chemical bonds are filled with D, H atoms, linear sp² C=C, C=O, and sp³ structural elements like C-C, C-H(D), C-D_2,3, C-O, O-H, COOH, C _x D(H) _y found earlier from the infrared spectra of CD _x films, which are binding linear elements of a carbon network. The amorphous structure of CD _x films has been confirmed by the results of earlier fractal structure modeling, as well as by researches with X-ray photoelectron spectroscopy which allow finding a definite similarity with the electron structure of their model analogues — polymeric a-C:H and a-C:D films with a disordered carbon network consisting of atoms in sp³ + sp² states.     

Inverse magnetoresistance in (FeCoB)-(Al<Subscript>2</Subscript>O<Subscript>3</Subscript>) magnetic granular composites

The magnetoresistance, magnetization, and microstructure of granular composites with the general formula (Fe₄₀Co₄₀B₂₀)_x(Al₂O₃)_100?x were studied for contents of the amorphous metallic component both above and below the percolation threshold (x≈43). The low-temperature transverse magnetoresistance of the composites is negative at x=41 and practically zero for x=49. For metal contents below the percolation threshold (x=31), a noticeable (7–8%) positive magnetoresistance, reached in magnetic fields of about 17 kOe, was observed. Possible mechanisms of the generation of inverse (positive) magnetoresistance are discussed.     

Electrical instability of LiCu<Subscript>2</Subscript>O<Subscript>2</Subscript> crystals

The temperature behavior of I-U curves and the field and temperature dependences of the electrical resistivity and dielectric permittivity of crystals of the LiCu₂O₂ phase have been studied. It was established that the crystals belong to p-type semiconductors and that their static resistivity in the range 80–260 K follows the Mott law ρ=Aexp(T₀/T)^1/4 describing variable-range hopping over localized states. At comparatively low electric fields, the crystals exhibit threshold switching and characteristic S-shaped I-U curves containing a region of negative differential resistivity. In the critical voltage region, jumps in the conductivity and dielectric permittivity are observed. Possible mechanisms of the disorder and electrical instability in these crystals are discussed.     

The Nernst-Ettingshausen coefficient in the normal phase of doped HTSCs of the YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>y</Subscript> system

The temperature dependence of the Nernst-Ettingshausen coefficient Q(T) in the normal phase of doped HTSCs of the yttrium system was studied. The main features characterizing the behavior of this coefficient were revealed, and the character and mechanism of the effect that various nonisovalent substituents exert on the Q(T) dependence were analyzed. It is shown that the narrow-band model permits one not only to describe all the specific features observed in the Q(T) curves but also to perform a simultaneous quantitative analysis of the temperature dependences of four kinetic coefficients (the electrical resistivity and the Seebeck, Hall, and Nernst-Ettingshausen coefficients) with the use of a common set of model parameters characterizing the band structure and carrier system in the normal phase of an HTSC. This approach was employed to determine the carrier mobilities and the asymmetry of the dispersion curve in the systems studied (YBa₂Cu₃O_y, y = 6.37–6.91; YBa₂Cu_3?xCo_xO_y, x = 0–0.3; Y_1?xCa_xBa₂Cu₃O_y, x = 0–0.25; Y_1?xCa_xBa_2?xLa_xCu₃O_y, x = 0–0.5) and to analyze the effect of the substitutions involved on the variation of these parameters.     

Internal friction of Li<Subscript>2</Subscript>B<Subscript>4</Subscript>O<Subscript>7</Subscript> single crystals

This paper reports on the results of measurements of the internal friction Q^?1 and the shear modulus G of Li₂B₄O₇ single crystals along the crystallographic directions [100] and [001] in the temperature range 300–550 K for strain amplitudes of (2–10)×10^?5 at infralow frequencies. The anomalies observed in Q^?1 and G in the temperature range 390–410 K are due to thermal activation of the mobility of lithium cations and their migration from one energetically equivalent position to another. A jump in the internal friction background is revealed in the vicinity of the Q^?1 and G anomalies for the Li₂B₄O₇ crystal. The magnitude of this jump depends on the crystallographic direction.     

Ion-pair states of I<Subscript>2</Subscript>, Br<Subscript>2</Subscript>, IBr,and ICl

The experimentally determined energies and rotational constants of the vibrational levels v = 0–20 of the Ion-Pair states Ω = 0⁺, Ω = 1 of the I₂, Br₂, IBr, and ICl molecules are modeled. The model used includes three diabatic states, which correlate to X⁺(3P, 1D) + Y^～(1S₀). These states are coupled by the spin-orbit interaction, which is assumed to be independent of the internuclear distance. For IBr and ICl, as well as for the ungerade states of I₂ and Br₂, satisfactory results are obtained. The model is less applicable to the gerade states of I₂ and Br₂, which is possibly results from the retainment of the asymptotic J _A J _B coupling of the angular momenta at equilibrium internuclear distances.     

Anomalous temperature dependence of photoluminescence in GeO<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> films and GeO<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>/SiO<Subscript>2</Subscript> nano-heterostructures

The optical properties of GeO _x film and GeO _x /SiO₂ multilayer heterostructures (with thickness of GeO _x layers down to 1 nm) were studied with the use of Raman scattering and infrared spectroscopy, ellipsometry and photoluminescence spectroscopy including temperature dependence of photoluminescence. The observed photoluminescence is related to defect (dangling bonds) in GeO _x and interface defects for the case of GeO _x /SiO₂ multilayer heterostructures. From analysis of temperature dependence of photoluminescence intensity, it was found that rate of nonradiative transitions in GeO _x film has Berthelot type, but anomalous deviations from Berthelot type temperature dependence were observed in temperature dependences of photoluminescence intensities for GeO _x /SiO₂ multilayer heterostructures.     

Ab initio study of I<Subscript>2</Subscript> and T<Subscript>2</Subscript> stacking faults in C14 Laves phase MgZn<Subscript>2</Subscript>

Based on the synchroshear mechanism, the formation of intrinsic stacking fault I ₂ and twin-like stacking fault T ₂ in C14 Laves phases has been modeled in detail and the generalised stacking fault energy curve of I ₂ and T ₂ for C14 Laves phase MgZn₂ has been calculated from first-principles. The results demonstrate that the unstable stacking fault energy of I ₂ by synchroshear is still very large, and the stable stacking fault energy of I ₂ is higher in comparison with pure Mg implying that the formation of I ₂ stacking fault in MgZn₂ is difficult. Starting with the I ₂ configuration, the T ₂ stacking fault can be formed by an additional synchroshear. The unstable and stable stacking fault energies of T ₂ are only slightly larger than those of I ₂, implying that the formation of T ₂ may be essentially similar to that of I ₂. From the obtained generalised stacking fault energy, the relevant deformation mechanism of MgZn₂ is also discussed. Finally, the electronic structure during synchroshear process is further studied.