Electrical,optical, and structural characterization of p‐type N‐doped SnO thin films prepared by thermal oxidation of sputtered SnNx thin films

We present a study of electrical and optical properties of nitrogen‐doped tin oxide thin films deposited on glass by the DC Magnetron Sputtering method. The deposition conditions to obtain p‐type thin films were a relative partial pressure between 7% and 11% (N₂ and/or O₂), a total working pressure of 1.8 mTorr and a plasma power of 30 W. The deposited thin films were oxidized after annealing at 250°C for 30 minutes. X‐ray diffraction results showed that the as‐deposited thin films exhibit a Sn tetragonal structure, and after annealing, they showed SnO tetragonal structure. X‐ray photoelectron spectroscopy results showed the presence of nitrogen in the samples before and after annealing. The measured physical parameters of the thin films were optical band gap between 1.92 and 2.68 eV, resistivity between 0.52 and 5.46 Ωcm, a concentration of p‐type carriers between 10¹⁸ and 10¹⁹ cm^?3, and a Hall mobility between 0.1 and 1.94 cm²V^?1s^?1. These thin films were used to fabricate p‐type thin film transistors.     

High Performance Non‐enzymatic Glucose Sensor Based on One‐Step Electrodeposited Nickel Sulfide

Nanostructured NiS thin film was prepared by a one‐step electrodeposition method and the structural, morphological characteristics of the as‐prepared films were analyzed by X‐ray diffractometry (XRD), field emission scanning electron microscopy (FESEM) and energy dispersive X‐ray analysis (EDAX). The electrocatalytic activity of NiS thin film towards glucose oxidation was investigated by fabricating a non‐enzymatic glucose sensor and the sensor performance was studied by cyclic voltammetry (CV) and amperometry. The fabricated sensor showed excellent sensitivity and low detection limit with values of 7.43 μA μM ^?1 cm^?2 and 0.32 μM , respectively, and a response time of <8 s.     

Bis(5,7‐dimethyl‐8‐hydroxyquinolinato)platinum(II) Complex for Efficient Organic Heterojunction Solar Cells

Organic photovoltaic (OPV) cells using metal(II) (Pt, Pd, Cu, and Ni) chelates of 8‐hydroxyquinoline (Hq) or 5,7‐dimethyl‐8‐hydroxy‐quinoline (HMe₂q) as an electron donor were fabricated by vacuum deposition. The bis(5,7‐dimethyl‐8‐hydroxyquinolinato)platinum(II) [Pt(Me₂q)₂]‐based OPVs showed the best performance with an open voltage (V_OC) of 0.42 V, a short circuit current density (J_SC) of 14.8 mA cm^?2, and a maximum power conversion efficiency (η_P) of 2.4 %. The X‐ray single‐crystal structures together with the grazing incidence X‐ray diffraction (GIXRD) data of thin film samples reveal that the peripheral methyl substituent(s) and platinum(II) ion are essential for the high degree of film crystallinity resulting in improved performance of the as‐fabricated field‐effect transistors (FETs) and OPV cells.     

A High‐Performance Organic Field‐Effect Transistor Based on Platinum(II) Porphyrin: Peripheral Substituents on Porphyrin Ligand Significantly Affect Film Structure and Charge Mobility

Organic field‐effect transistors incorporating planar π‐conjugated metal‐free macrocycles and their metal derivatives are fabricated by vacuum deposition. The crystal structures of [H₂(OX)] (H₂OX=etioporphyrin‐I), [Cu(OX)], [Pt(OX)], and [Pt(TBP)] (H₂TBP=tetra‐(n‐butyl)porphyrin) as determined by single crystal X‐ray diffraction (XRD), reveal the absence of occluded solvent molecules. The field‐effect transistors (FETs) made from thin films of all these metal‐free macrocycles and their metal derivatives show a p‐type semiconductor behavior with a charge mobility (μ) ranging from 10^?6 to 10^?1 cm² V^?1 s^?1. Annealing the as‐deposited Pt(OX) film leads to the formation of a polycrystalline film that exhibits excellent overall charge transport properties with a charge mobility of up to 3.2×10^?1 cm² V^?1 s^?1, which is the best value reported for a metalloporphyrin. Compared with their metal derivatives, the field‐effect transistors made from thin films of metal‐free macrocycles (except tetra‐(n‐propyl)porphycene) have significantly lower μ values (3.0×10^?6–3.7×10^?5 cm² V^?1 s^?1).     

Electrochemical Fabrication and Properties of Highly Ordered Fe‐Doped TiO2 Nanotubes

Highly‐ordered Fe‐doped TiO₂ nanotubes (TiO₂nts) were fabricated by anodization of co‐sputtered Ti–Fe thin films in a glycerol electrolyte containing NH₄F. The as‐sputtered Ti–Fe thin films correspond to a solid solution of Ti and Fe according to X‐ray diffraction. The Fe‐doped TiO₂nts were studied in terms of composition, morphology and structure. The characterization included scanning electron microscopy, energy‐dispersive X‐ray spectroscopy, X‐ray diffraction, UV/Vis spectroscopy, X‐ray photoelectron spectroscopy and Mott–Schottky analysis. As a result of the Fe doping, an indirect bandgap of 3.0 eV was estimated using Tauc’s plot, and this substantial red‐shift extends its photoresponse to visible light. From the Mott–Schottky analysis, the flat‐band potential (E_fb) and the charge carrier concentration (N_D) were determined to be ?0.95 V vs Ag/AgCl and 5.0 ×10¹⁹ cm^?3 respectively for the Fe‐doped TiO₂nts, whilst for the undoped TiO₂nts, E_fb of ?0.85 V vs Ag/AgCl and N_D of 6.5×10¹⁹ cm^?3 were obtained.     

A Non‐Enzymatic Hydrogen Peroxide Sensor Based on Ag/MnOOH Nanocomposites

A novel non‐enzymatic sensor based on Ag/MnOOH nanocomposites was developed for the detection of hydrogen peroxide (H₂O₂). The H₂O₂ sensor was fabricated by immobilizing Ag/MnOOH nanocomposites on a glassy carbon electrode (GCE). The morphology and composition of the sensor surface were characterized using scanning electron microscopy, energy‐dispersive X‐ray spectroscopy, transmission electron microscopy and X‐ray diffraction spectroscopy. The electrochemical investigation of the sensor indicates that it possesses an excellent electrocatalytic property for H₂O₂, and could detect H₂O₂ in a linear range from 5.0 µM to 12.8 mM with a detection limit of 1.5 µM at a signal‐to‐noise ratio of 3, a response time of 2 s and a sensitivity of 32.57 µA mM^?1 cm^?2. Additionally, the sensor exhibits good anti‐interference. The good analytical performance, low cost and straightforward preparation method made this novel electrode material promising for the development of effective non‐enzymatic H₂O₂ sensor.     

Axis‐Oriented,Continuous Anatase Titania Films with Exposed Reactive {100} Facets

Homogeneous TiO₂ single crystals with high exposure of {100} reactive facets were constructed as a seed monolayer on transparent conductive substrates with the desired orientation of reactive facets. A secondary growth process was subsequently carried out on the monolayer seed film to form an axis‐oriented continuous reactive film. Performing secondary growth with different precursors led to optimized conditions for high‐performance photoelectrochemical activity of anatase TiO₂ films. Experimental techniques such as UV/Vis absorption spectroscopy, X‐ray diffraction, high‐resolution SEM, and photoelectrochemistry were used to characterize the structural, optical, and photoelectrochemical properties of the as‐synthesized films. As a photoanode in a photoelectrochemical cell, the axis‐oriented reactive film shows a maximum photocurrent density of 0.3 mA cm^?2, as opposed to 0.075 mA cm^?2 for non‐axis‐oriented (randomly oriented) TiO₂ film.     

High‐performance Flexible Complementary Electrochromic Device Based on Plasma Modified WO3 Nano Hybrids and V2O5 Nanofilm with Low Operation Voltages

Tungsten trioxide‐poly(3,4‐ethylenedioxythiophene) (WO₃‐PEDOT) and tungsten trioxide‐polyfuran (WO₃‐PFu) were prepared by rf rotating plasma polymerization. Electrochromic hybrid thin films were fabricated onto flexible polyethylene terephthalate (PET)/ indium tin oxide (ITO) film using electron beam evaporation method. In order to deeply characterize all films, scanning electron microscopy‐energy dispersive X‐ray spectroscopy (SEM‐EDS) and electrochemical impedance spectroscopy (EIS) techniques were used. The counter electrode effect on plasma modified WO₃ nano hybrids‐based electrochromic devices (ECDs) was evaluated. By incorporating flexible vanadium pentoxide (V₂O₅) film as counter electrode, complementary ECDs were constructed through combining the hybrid flexible films (WO₃‐PEDOT, WO₃‐PFu) as working electrodes, which exhibit highly efficient electrochromic performance with low voltage operation. Especially, WO₃‐PEDOT/V₂O₅‐based ECD owns a high optical modulation of 61.5 % at 750 nm driven by −1.0 V (coloration) and +1 V (bleaching) with fast response times (coloration time: 13.58 s, bleaching time: 8.07 s) and a high coloration efficiency of 527 cm² C⁻¹. This study can supply useful and efficient avenue for designing flexible complementary electrochromic device for energy‐saving flexible electronics.     

Heterotermetallic Indium Lithium Halostannates: Low‐Temperature Single‐Source Precursors for Tin‐Rich Indium Tin Oxides and Their Application for Thin‐Film Transistors

The syntheses and structural elucidation of dimeric [Sn(OCyHex)₂] ( 1 ), its corresponding (cyclohexoxy)alkalistannates(II) [{M(OCyHex)₃Sn}₂] (M=Li ( 2 ), Na ( 3 ), K ( 4 )), and of the first heteroleptic heterotermetallic Li/In/Sn–haloalkoxide clusters [X₂In{LiSn₂(OCyHex)₆}] (X=Br ( 5 ), Cl ( 6 )) with a double seco‐norcubane core are reported. They represent suitable precursors for new amorphous indium tin oxide (ITO) materials as transparent conducting oxides with drastically reduced concentrations of expensive indium, while maintaining their high electrical performance. In fact, compounds 5 and 6 were successfully degraded under dry synthetic air at relatively low temperature, resulting in new semiconducting tin‐rich ITOs homogeneously dispersed in a tin oxide/lithium oxide matrix. The obtained particles were investigated and characterised by different analytical techniques, such as powder XRD, IR spectroscopy, SEM, TEM and energy‐dispersive X‐ray spectroscopy (EDX). The analytical data confirm that the final materials consist of tin‐containing indium oxide embedded in an amorphous tin oxide matrix. The typical broadening and shift of the observed indium oxide reflections to higher 2θ values in the powder XRD pattern clearly indicated that tin centres were successfully incorporated into the In₂O₃ lattice and partially occupied In³⁺ sites. Investigations by EDX mapping proved that Sn was homogeneously distributed in the final materials. Thin‐film field‐effect transistors (FETs) were fabricated by spin‐coating of silicon wafers with solutions of 5 in toluene and subsequent calcination under dry air (25–700 °C). The FETs prepared with precursor 5 exhibited excellent performances, as shown by a charge‐carrier mobility of 6.36×10^?1 cm² V^?1 s (calcination at 250 °C) and an on/off current ratio of 10⁶.     

α‐Fe2O3 Film with Highly Photoactivity for Non‐enzymatic Photoelectrochemical Detection of Glucose

A non‐enzyme photoelectrochemical (PEC) glucose sensor based on α‐Fe₂O₃ film is investigated. The α‐Fe₂O₃ film was fabricated via a simple spin coating method. The proposed glucose sensor exhibits good selectivity, a fast response time of <5 s, a linear range of 0.05 to 6.0 mM, sensitivity of 17.23 μA mM^?1 cm^?2 and a detection limit of 0.05 μM. Meanwhile, the excellent performances of the α‐Fe₂O₃ sensor were obtained in reproducibility and the long‐term stability under ambient condition. The linear amperometric response of the sensor covers the glucose levels in physiological and clinical for diabetic patients. Therefore, this non‐enzyme PEC sensor based on α‐Fe₂O₃ film has a great potential application in the development of glucose sensors.     

Exploring Lead‐Free Hybrid Double Perovskite Crystals of (BA)2CsAgBiBr7 with Large Mobility‐Lifetime Product toward X‐Ray Detection

Halide double perovskites have recently bloomed as the green candidates for optoelectronic applications, such as X‐ray detection. Despite great efforts, the exploration of promising organic–inorganic hybrid double perovskites toward X‐ray detection remains unsuccessful. Now, single crystals of the lead‐free hybrid double perovskite, (BA)₂CsAgBiBr₇ (BA⁺ is n‐butylammonium), featuring the unique 2D multilayered quantum‐confined motif, enable quite large μτ (mobility‐lifetime) product up to 1.21×10^?3 cm² V^?1. This figure‐of‐merit realized in 2D hybrid double perovskites is unprecedented and comparable with that of CH₃NH₃PbI₃ wafers. (BA)₂CsAgBiBr₇ crystals also exhibit other intriguing attributes for X‐ray detection, including high bulk resistivity, low density of defects and traps, and large X‐ray attenuation coefficient. Consequently, a vertical‐structure crystal device under X‐ray source yields a superior sensitivity of 4.2 μC Gy_air^?1 cm^?2.     

Synthesis of Ag Nanoparticle Doped MnO2/GO Nanocomposites at a Gas/Liquid Interface and its Application in H2O2 Detection

Ag/MnO₂/GO nanocomposites were synthesized via the method of gas/liquid interface based on silver mirror reaction, and a non‐enzymatic H₂O₂ sensor was fabricated through immobilizing Ag/MnO₂/GO nanocomposites on GCE. The composition and morphology of the nanocomposites were studied by energy‐dispersive X‐ray spectroscopy (EDS), X‐ray diffraction (XRD), X‐ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). Electrochemical investigation indicated that it exhibited a favorable performance for the H₂O₂ detection. Its linear detection range was from 3 μM to 7 mM with a correlation coefficient of 0.9960; the sensitivity was 105.40 μA mM^?1 cm^?2 and the detection limit was estimated to be 0.7 μM at a signal‐to‐noise ratio of 3.     

A Novel Hydrogen Peroxide Amperometric Sensor Based on Hierarchical 3D Porous MnO2−TiO2 Composites

A novel nanocomposite electrode based on hierarchical 3D porous MnO₂?TiO₂ for the application in hydrogen peroxide (H₂O₂) sensors has been explored. This electrode was fabricated by growing TiO₂ cross‐linked nanowires on a commercial fluorine tin oxide (FTO) glass via a hydrothermal process and subsequent deposition of 3D honeycomb‐like MnO₂ nanowalls using an electrodeposition method (denoted as 3D MNS‐TNW@FTO). The obtained 3D MNS‐TNW@FTO electrode was characterized by scanning electron microscopy (SEM), Raman spectroscopy, X‐ray diffraction (XRD), and X‐ray photoelectron spectroscopy (XPS). Based on such a unique 3D porous framework and the existence of MnO₂, the electrode demonstrates a good performance in the detection of H₂O₂, with two linear ranges from 9.8 to 125 μM and 125 μM–1.0 mM, a good selectivity of 8.02 μA mM^?1 cm^?2, and a low detection limit of 4.5 μM. In addition, the simplicity of the developed low‐cost fabrication process provides an efficient method for the mass production of electrocatalytical MnO₂?TiO₂ nanocomposites on commercial FTO glass for H₂O₂ sensing applications and can be adapted for other electrochemical sensors for various biochemical targets. It thus is beneficial for the practical usage in bioanalysis.     

High‐performance field‐effect transistors based on furan‐containing diketopyrrolopyrrole copolymer under a mild annealing temperature

Two furan‐flanked polymers poly{3,6‐difuran‐2‐yl‐2,5‐di(2‐octyldodecyl)‐pyrrolo[3,4‐c]pyrrole‐1,4‐dione‐alt‐thienylenevinylene} (PDVFs), with a highly π‐extended diketopyrrolopyrrole backbone, are developed for solution‐processed high‐performance polymer field‐effect transistors (FETs). Atomic force microscopy and grazing incidence X‐ray scattering analyses indicate that PDVF‐8 and PDVF‐10 films exhibit a similar nodular morphology with the ultrasmall lamellar distances of 16.84 and 18.98 Å, respectively. When compared with the reported polymers with the same alkyl substitutes, this is the smallest d‐spacing value observed to date. This closed lamellar crystallinity facilitates charge carrier transport. Therefore, polymer thin‐film transistors fabricated from as‐spun PDVF‐8 films exhibit a high hole mobility exceeding 1.0 cm² V^?1 s^?1 with a current on/off ratio above 10⁶. After annealing treatment at 100 °C in air, the highest hole mobility of PDVF‐8‐based FETs was significantly improved to 1.90 cm² V^?1 s^?1, which is among the highest values of the reported FET devices fabricated from polymer thin films based on this mild annealing temperature. In contrast, long alkyl‐substituted PDVF‐10 exhibited a relatively low hole mobility of 1.65 cm² V^?1 s^?1 mainly resulting from low molecular weight. This work demonstrated that PDVFs would be promising semiconductors for developing cost‐effective and large‐scale production of flexible organic electronics. © 2014 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2014 , 52, 1970–1977     

Structural Polymorphism and Thin Film Transistor Behavior in the Fullerene Framework Molecule 5,6;11,12‐di‐o‐Phenylenetetracene

The molecular structure of the hydrocarbon 5,6;11,12‐di‐o‐phenylenetetracene (DOPT), its material characterization and evaluation of electronic properties is reported for the first time. A single‐crystal X‐ray study reveals two different motifs of intramolecular overlap with herringbone‐type arrangement displaying either face‐to‐edge or co‐facial face‐to‐face packing depicting intensive π–π interactions. Density functional theory (DFT) calculations underpin that a favorable electronic transport mechanism occurs by a charge hopping process due to a π‐bond overlap in the DOPT polymorph with co‐facial arene orientation. The performance of polycrystalline DOPT films as active organic semiconducting layer in a state‐of‐the‐art organic field effect transistor (OFET) device was evaluated and proves to be film thickness dependent. For 40 nm layer thickness it displays a saturation hole mobility (μ_hole) of up to 0.01 cm² V^?1 s^?1 and an on/off‐ratio (I_on/I_off) of 1.5×10³.     

Magnetite Nanorods Stabilized by Polyaniline/Reduced Graphene Oxide as a Sensing Platform for Selective and Sensitive Non‐enzymatic Hydrogen Peroxide Detection

In this study, magnetite nanorods stabilized on polyaniline/reduced graphene oxide (Fe₃O₄@PANI/rGO) was synthesized via a wet‐reflux strategy. The possible formation of Fe₃O₄@PANI/rGO was morphologically and structurally verified by field emission scanning electron microscopy (FE‐SEM), Fourier transform infrared (FT‐IR) spectroscopy, Raman spectroscopy, X‐ray diffraction (XRD) and X‐ray photoelectron spectroscopy (XPS). Furthermore, the thermal stability of Fe₃O₄@PANI/rGO was measured by a thermogravimetric analyzer (TGA); the composite had good thermal stability owing to the ceramic nature of Fe₃O₄. The Fe₃O₄@PANI/rGO has been applied as a potential sensing platform for electrochemical detection of hydrogen peroxide (H₂O₂). By the combined efforts of extended active surface area, active carbon support, more catalytic active sites and high electrical conductivity, the Fe₃O₄@PANI/rGO exhibited an improved performance toward the non‐enzymatic detection of H₂O₂ in 0.5 M KOH with a fast response time (5 s), high sensitivity (223.7 μA mM^?1 cm^?2), low limit of detection (4.45 μM) and wide linear range (100 μM–1.5 mM). Furthermore, the fabricated sensor exhibited excellent recovery rates (94.2–104.0 %) during real sample analysis.     

Chemical Liquid Phase Deposition of Thin Aluminum Oxide Films

Introduction Inorganic oxide films have attracted a lot of interest in the last several decades. Among them, silicon dioxide films are widely used in modern microelectronics, optics and mechanics. This material has been grown by various methods including thermal oxidation, chemical vapor phase deposition, plasma-enhanced chemical vapor phase deposition, and so on.1,2 Recently, Nagayama et al.3 have reported that SiO2 thin films could be produced by a new chemical method of liquid phase depos…     

Effects of CNT‐film Pretreatment on the Characteristics of NiCo2O4/CNT Core‐shell Hybrids as Electrode Material for Electrochemistry Capacitor

NiCo₂O₄/CNT nanocomposite films were fabricated by in‐situ growing ultrafine NiCo₂O₄ nanoparticles on acid‐modified carbon nanotube (CNT) films. The effects of CNT‐film pretreatment were investigated thoroughly by various characterization outfits including Fourier Transform Infrared spectroscopy (FT‐IR), X‐ray photoelectron spectroscopy (XPS), Raman spectroscopy, RTS‐9 four‐point probes resistivity measurement system, X‐ray powder diffraction (XRD), scanning electron microscopy (SEM) and CHI660D electrochemical workstation. These results suggested that carbon nanotubes were uniformly wrapped by NiCo₂O₄ nanoparticles forming a hierarchical core‐shell structure. And the crystallinity, conductivity of the CNTs and detail structure (both morphology and size) of the NiCo₂O₄ nanoparticles varied with prolonged acid treatment time which resulted in increased functional groups and defects on CNT films and further affected the electrochemical properties. The composite film composed of the CNT film pretreated by mixed acid for 12 h exhibited excellent electrochemical properties: 828 F/g at 1 A/g and 656 F/g at 20 A/g, and maintained over 99 % of its capacitance after 3000 cycles of charge/discharge at 5 A/g. Acid treatment for either too long or too short is detrimental to the electrochemical properties of the composite films. Such work should be of fundamental importance for tailoring electrochemical properties by elaborate design of acid treatment on CNTs.     

Engineered Molecular Chain Ordering in Single‐Walled Carbon Nanotubes/Polyaniline Composite Films for High‐Performance Organic Thermoelectric Materials

Single‐walled carbon nanotubes (SWNTs)/polyaniline (PANI) composite films with enhanced thermoelectric properties were prepared by combining in situ polymerization and solution processing. Conductive atomic force microscopy and X‐ray diffraction measurements confirmed that solution processing and strong π–π interactions between the PANI and SWNTs induced the PANI molecules to form a highly ordered structure. The improved degree of order of the PANI molecular arrangement increased the carrier mobility and thereby enhanced the electrical transport properties of PANI. The maximum in‐plane electrical conductivity and power factor of the SWNTs/PANI composite films reached 1.44×10³ S cm^?1 and 217 μW m^?1 K^?2, respectively, at room temperature. Furthermore, a thermoelectric generator fabricated with the SWNTs/PANI composite films showed good electric generation ability and stability. A high power density of 10.4 μW cm^?2 K^?1 was obtained, which is superior to most reported results obtained in organic thermoelectric modules.     

Characterization of Tin(IV) Oxide Thin Films Prepared by Atmospheric Pressure Chemical Vapor Deposition of cis‐[SnCl4{OC(H)OC2H5}2]

A new single‐source precursor, [SnCl₄{OC(H)OC₂H₅}₂], prepared by treating tin tetrachloride with ethyl formate (1:2 ratio) was developed for the deposition of tin oxide thin films on glass substrates. The compound [SnCl₄{OC(H)OC₂H₅}₂] is highly volatile and provides very high growth rates (up to 100Å s^?1 at 560 °C) in an atmospheric pressure chemical vapor deposition (APCVD) reactor. More significantly, the compound does not decompose to tin oxide below 320 °C, thereby minimizing the formation of particles in the vapor above the growing tin oxide film. To prepare highly conducting fluorine doped tin oxide (SnO₂:F) films 2,2,2‐trifluoroethyl trifluoroacetate was used as the source of fluoride. High quality SnO₂:F films were deposited at 560 °C with a flow rate of 2 mL fluoride reagent hr^?1; typical film properties are resistivity of 5.9 X 10^?4 Ω cm, Hall mobility of 27.3 cm² V^?1 s^?1, carrier concentration of 3.9 X 10²⁰ cm^?3 and percent transmission ranging from 86 to 88 %. The best films of SnO₂:F possess transparencies as high as 90 % (750 nm), sheet resistances as low as 7 Ω sq^?1 and Haacke's figure of merit as high as 29 X 10^?3 (750 nm). The newly developed APCVD reactor and the chemistry were optimized with respect to structural, electrical and optical properties of the films by adjusting the substrate temperature, gas flow rates and the amount of fluoride present in the vapor stream. Growth rates with respect to deposition time, substrate temperature and flow rates of precursors were found to be similar for both undoped (SnO₂) and doped (SnO₂:F) samples. The SnO₂:F films possess larger grains than the SnO₂ which may account for the lower resistivity and the higher mobility in the SnO₂:F samples.