Oriented growth of TS-1 zeolite ultrathin films on poly(ethylene oxide) monolayer templates

Self-assembled monolayers of poly(ethylene oxide) (PEOM) were used as templates to direct the nucleation and subsequent oriented growth of TS-1 zeolite thin films. The resulting TS-1 zeolite thin films exhibited completely oriented crystalline domains with the 010 crystallographic direction parallel to the surface normal with a little deformation in the in-plane direction. Remarkably, the correlation length of the film is as extremely large as 1700 A (1200 A) in the out-of-plane (in-plane) direction. PEOM act as two-dimensional media for the nucleation and growth of highly oriented TS-1 zeolite thin films. This study demonstrates that the highly oriented TS-1 thin films can be achieved by using the inner parts of PEOM as templates.     

Origins for epitaxial order of sexiphenyl crystals on muscovite(001)

The epitaxial order of sexiphenyl crystals on muscovite(001) is investigated by x‐ray diffraction, lattice misfit calculations and atomic force microscopy. Depending on the substrate temperature during the thin film growth process, different epitaxial orientations are formed. Sexiphenyl thin films prepared at 370 K preferentially form crystals with the crystallographic (11‐1) planes parallel to the substrate surface while at 434 K a strong fraction of crystals with (11‐2) orientations is grown. The epitaxial orders of sexiphenyl crystals are compared with lattice misfit calculations. The in‐plane order of the {11‐1} crystals can be explained by a point‐on‐line coincidence I, which reveals that the interface is formed by undisturbed crystal surfaces. The epitaxial order of the {11‐2} oriented crystals is characterised by the experimental observation that low indexed crystal directions in the sexiphenyl(11‐2) plane and the muscovite(001) surface coincide with each other, forming a near‐coincidence case. Corrugations of the substrate surface are responsible for this second type of epitaxial order. Characteristic features in the thin film morphology could be correlated to the two observed epitaxial orientations of the sexiphenyl crystals. Copyright © 2009 John Wiley & Sons, Ltd.     

Weak epitaxy growth of metal-free phthalocyanine on p-sexiphenyl monolayer and double-layer films

Weak epitaxy growth (WEG) can afford high-mobility thin films of disk-like organic semiconductor of which mobility is up to the level of the corresponding single crystals. We investigated the WEG behavior and mechanism of planar phthalocyanine in the model system of metal-free phthalocyanine (H2Pc) grown on p-sexiphenyl (p-6P) ultrathin films (monolayers and double layers). Highly oriented H2Pc films with molecules standing up exhibited two kinds of different in-plane orientations, i.e., three sets of in-plane orientations and only one set of in-plane orientation, on p-6P monolayer and double-layer films, respectively. The surface geometrical channels of p-6P substrate dominated the oriented nucleation and growth of H2Pc film. Consequently, the H2Pc film showed incommensurate and commensurate epitaxy on p-6P ultrathin films.     

Imaging of crystal morphology and molecular simulations of surface energies in pentacene thin films

We have investigated the crystal growth of the organic semiconductor pentacene by complementing molecular simulations of surface energies with experimental images of pentacene films. Pentacene thin films having variations in thickness and grain size were produced by vacuum sublimation. Large (approximately 20 microm) faceted crystals grew on top of the underlying polycrystalline thin film. The films were characterized using optical microscopy (OM), X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Single crystals most commonly grew in a truncated diamond shape with the largest crystal face, (001), growing parallel to the substrate. Crystal morphologies and surface energies were calculated using force field-based molecular simulations. The (001) surface was found to have the lowest energy, at 76 mJ/m(2), which was consistent with experimental observations of crystal face size. It was demonstrated that the morphology of the large faceted crystals approached the equilibrium growth shape of pentacene. From contact angle measurements, the critical surface tension of textured pentacene thin films in air was determined to be 34 mJ/m(2).     

AFM observations of phase transitions in molecularly thin films of a three-ring bent-core compound

Submonolayer thin films of a three-ring bent-core (or banana-shaped) compound, m-bis(4-n-octyloxystyryl)benzene (m-OSB), were vacuum-deposited on a mica surface, and a spontaneous transition from monolayer films to bilayer crystals was observed at room temperature, which was ascribed to the specific molecular shape and polar layered packing of the bent-core molecules [Tang et al. J. Phys. Chem. B 2004, 108 (34), 12921-12926]. The crystal nucleation and growth from the monolayer films as well as the melting phase transition from the bilayer crystals were investigated using atomic force microscopy (AFM). It was shown that after initial nucleation, the crystal growth was achieved through three pathways: direct absorption of molecules from monolayer films, molecular cluster diffusion, and quasi-Ostwald ripening. When annealing the bilayer crystals at elevated temperatures, morphological change from a bilayer to a monolayer was observed, and some new islands with fingerlike patterns were formed during this process, which resulted from a diffusion-controlled growth of the molten molecules. In general, the high-resolution AFM in combination with the molecularly thin m-OSB films provided us with direct visualization of nucleation, crystal growth, melting, and film morphology evolution on the mesoscopic scale, which are of fundamental interest from the theoretical viewpoint and are of central importance for the control of interfacial properties in practical applications.     

Observation of shish crystal growth into nondeformed melts

Thin films of isotactic polystyrene (iPS) were deformed on a carbon supported TEM grid at temperatures between 210 °C and 240 °C. The elongation of the supercooled polymer melt films is localized in a deformation zone due to the formation of cracks within the brittle carbon support film, whereas the adjoining areas stay in a relaxed state. Since the nucleation of fibrous (“shish”) crystals needs an orientation mechanism to align the molecular chains, their origin is located in the deformation zone. It is shown that the subsequent growth of the shish crystal can propagate into the relaxed melt although it has to surmount the adhesion to the carbon substrate. From these results the conclusion is drawn that the shish crystal growth can be an autocatalytic process, which induces a self‐orientation of the molecules in the growth front of the crystal tip and does not necessarily need an external flow field. © 2000 John Wiley & Sons, Inc. J Polym Sci B: Polym Phys 38: 1183–1187, 2000     

Process study of thermal plasma chemical vapor deposition of diamond,part I: Substrate material,temperature, and methane concentration

Effects of process parameters on diamond film synthesis in DC thermal plasma jet reactors are discussed including substrate material, methane concentration and substrate temperature. Diamond has been deposited on silicon, molybdenum, tungsten, tantalum, copper, nickel, titanium, and stainless steel. The adhesion of diamond film to the substrate is greatly affected by the type of substrate used. It has been found that the methane concentration strongly affects the grain size of the diamond films. Increased methane concentrations result in smaller grain sizes due to the increased number of secondary nucleations on the existing facets of diamond crystals. Substrate temperature has a strong effect on the morphology of diamond films. With increasing substrate temperature, the predominant orientation of the crystal growth planes changes from the (111) to the (100) planes. Studies of the variation of the film quality across the substrate due to the nonuniformity of thermal plasma jets indicate that microcrystalline graphite formation starts at the corners and edges of diamond crystals when the conditions become unfavorable for diamond deposition.     

Study of the Interface Microstructures of CVD Diamond Films by TEM

 The characteristics of the interface microstructures between a CVD diamond film and the silicon substrate have been studied by transmission electron microscopy and electron energy loss spectroscopy. The investigations are performed on plan-view TEM specimens which were intentionally thinned only from the film surface side allowing the overall microstructural features of the interface to be studied. A prominent interfacial layer with amorphous-like features has been directly observed for CVD diamond films that shows a highly twinned defective diamond surface morphology. Similar interfacial layers have also been observed on films with a <100> growth texture but having the {100} crystal faces randomly oriented on the silicon substrate. These interfacial layers have been unambiguously identified as diamond phase carbon by both electron diffraction and electron energy loss spectroscopy. For the CVD diamond films that exhibit heteroepitaxial growth features, with the {100} crystal faces aligned crystallographically on the silicon substrate, such an interfacial layer was not observed. This is consistent with the expectation that the epitaxial growth of CVD diamond films requires diamond crystals to directly nucleate and grow on the substrate surface or on an epitaxial interface layer that has a small lattice misfit to both the substrate and the thin film material.     

Crystals Array via Oriented Nucleation and Growth Induced by Smectic E Mesophase of C7-T-BTBT

Long-range order crystalline thin films of organic semiconductors have attracted wide attention owing to their high charge carrier mobility. However, uncontrolled crystal nucleation and growth during the thin film drying process cause the formation of grain boundaries, thereby limiting the long-range order. Herein, we achieved the oriented nucleation and growth of organic semiconductors by off-centre spin-coating at the temperature of the smectic E(SmE) liquid crystal mesophase, and then followed by Ostwald ripening during solvent vapour annealing. The thin film of 2-(5-heptylthiophen-2-yl)[1]benzothieno[3,2-b] [1]benzothiophne (C7-T-BTBT) blended with 40%(mass fraction) poly(methyl methacrylate)(PMMA) was prepared by off-centrespin-coating at SmE mesophase(170℃), followed by solvent vapour annealing in chloroform for 24 h(chloroform is a good solvent for C7-T-BTBT and PMMA). The C7-T-BTBT molecules grew to rod-like crystals, which were mostly arranged parallel to each other. The crystal growth was perfect and resulted in a single crystal. The average length of the crystals was approximately 87 μm. Moreover, the highest charge carrier mobility is 1.62 cm²·V⁻¹·s⁻¹ as against that of the film prepared at 25℃(0.06 cm²·V⁻¹·s⁻¹).     

Deposition of oriented zeolite A films: in situ and secondary growth

Zeolite A suspensions with a monomodal, narrow particle size distribution have been prepared. The suspended particles in a TMAOH water solution at pH 9 are negatively charged with a zeta potential of −43 mV. Modification of the external surface of the zeolite particles by a silylation reaction produces particles that, when they are suspended in water, are positively charged and have a zeta potential of +40 mV.The suspensions of the negatively or positively charged particles can be used for the preparation of adsorbed layers of particles on oppositely charged substrates by electrostatic attraction. This deposition process leads to a high coverage of the substrate with well-adhered particles. The cubic morphology of the zeolite particles results in preferential orientation after deposition. The particles are oriented with their {h 0 0} planes (cube faces) parallel and perpendicular to the substrate (out-of-plane orientation). The particles are randomly oriented with respect to the direction perpendicular to the substrate (in-plane orientation). Although, under optimized conditions, the coverage is high and only one adsorption cycle is necessary, the particles are not closely packed.Alternately, the zeolite particle suspensions can be used to deposit close-packed arrays of particles by convective particle transport during dip coating on substrates bearing the same charge as the zeolite particles. Using monodispersed zeolite A suspensions and slow speed dip coating close-packed hexagonal colloidal crystals were prepared. The type of colloidal crystal deposits formed range from continuous sublayers, monolayers, or multilayers to isolated discoidal clusters consisting of few zeolite particles. Factors affecting the deposited layer(s) structure are particle concentration of the suspension and withdrawal speed. In addition to close packing, the layers prepared by dip coating exhibit preferred orientation with the particle faces lying parallel and perpendicular to the substrate surface. Moreover, this second route of precursor film formation by colloidal crystallization leads to domains of well-aligned zeolite particles in three dimensions, i.e. with their faces parallel to each other. The oriented domains span the length of several particles; however, low angle boundaries and other defects during colloidal crystallization prevent the formation of macroscopically three-dimensionally ordered zeolite particles.The precursor layers were subjected to secondary growth in order to prepare continuous intergrown films. Secondary growth proceeds initially by local epitaxy on the deposited particles. Later in the process, deposition proceeds by incorporation of particles from solution along with re-nucleation on the growing film. The intergrown films have predominately [h 0 0] out-of-plane orientation; however, after extended secondary growth treatment a population of [h h h] grains appears on the surface of the regrown films.     

MEL分子筛膜不同取向生长的控制

采用晶种涂层的方法在单晶硅表面上制备了不同取向的MEL分子筛膜, 详细研究了膜的择优生长条件及其取向控制. 水含量和反应时间对膜的取向有较大影响. 在水含量较低的反应体系中, 缩短反应时间有利于得到(101)取向的分子筛膜. 水含量提高导致膜的取向发生变化, 由(101)取向变为(101)/(200)混合取向. 晶种层对膜的取向没有直接影响, 晶种层连续生长形成单层分子筛膜.     

Induction and inhibition of preferential enrichment by controlling the mode of the polymorphic transition with seed crystals

Both induction and inhibition of "preferential enrichment", an unusual symmetry-breaking enantiomeric-resolution phenomenon observed upon simple recrystallization of a certain kind of racemic crystals from organic solvents, have been successfully achieved by controlling the mode of the polymorphic transition during crystallization with appropriate seed crystals. Such control of the polymorphic transition can be interpreted in terms of a novel phenomenon consisting of 1) the adsorption of prenucleation aggregates, 2) the heterogeneous nucleation and crystal growth of a metastable crystalline form, and 3) the subsequent polymorphic transition into the more stable form; these three processes occur on the same surface of a seed crystal. We refer to this phenomenon as an "epitaxial transition", which has been confirmed by means of in situ attenuated total reflection (ATR) FTIR spectroscopy in solution and the solid state, differential scanning calorimetry (DSC) measurements of the deposited crystals, and X-ray crystallographic analysis of the single crystals or the direct-space approach employing the Monte Carlo method with the Rietveld refinement for the structure solution from the powder X-ray diffraction data.     

多孔SiC陶瓷微孔道内合成Silicalite-2分子筛膜

榉木经高温热解转化为生物碳模板, 通过液相渗硅反应工艺制备了保持木材微观结构的多孔SiC陶瓷. 在生物形态多孔SiC陶瓷载体上采用原位沉积晶种-二次生长法在其微孔道内壁形成了一层5 μm厚的Silicalite-2分子筛膜. 利用XRD, SEM和BET对复合材料的相组成、微观结构和比表面积进行了表征, 研究了水热晶化温度对原位沉积晶种和二次生长成膜的影响. 经原位沉积(120 ℃, 36 h)晶种涂层后在载体孔道表面形成了一层球形颗粒堆积的连续晶种层, 经170 ℃, 36 h的二次生长, 晶种不断长大并交织生长形成连续致密单层分子筛膜. 在多孔SiC陶瓷微孔道中沿垂直于载体表面方向形成了一层对齐排列的Silicalite-2棒状晶体, 颗粒生长主要沿晶体的最长轴[101]方向进行. Silicalite-2/SiC复合孔结构材料的微孔体积为0.013 cm³/g, BET比表面积为43.2 m²/g, 而相应的分子筛负载量为9.5%.     

camoo4薄膜的恒电位阳极氧化法制备及表征

camoo4薄膜;恒电位;阳极氧化; 制备;表征     

Circular patterns of calcium oxalate crystals induced by defective Langmuir-Blodgett film

The injury of the renal epithelial cell membrane can promote the nucleation of nascent crystals, as well as adhesion of crystals on it. It thus accelerates the formation of renal calculi. In this paper, the defective Langmuir-Blodgett (LB) films were used as a model system to simulate the injured renal epithelial cell membrane. The microcosmic structure of the defective LB film and the molecular mechanism of the effect of this film on nucleation, growth, deposited patterns and adhesion of calcium oxalate monohydrate (COM) were investigated. The circular defective domains were formed in dipalmitoylphosphatidylcholine (DPPC) LB film after the film was treated by potassium oxalate. These domains could induce ring-shaped patterns of COM crystals. In comparison, the LB film without pretreatment by potassium oxalate only induced random growth of hexagonal COM crystals. As the crystallization time increased, the size of COM crystals in the patterns increased, the crystal patterns changed from empty circles to solid circles, and the number of the circular patterns with small size (5-20 μm) increased. The results would shed light on the molecular mechanism of urolithiasis induced by injury of the renal epithelial membrane at the molecular and supramolecular level.     

Computational modelling of nematic phase ordering by film and droplet growth over heterogeneous substrates

This paper presents a computational study of defect nucleation associated with the kinetics of the isotropic-to-nematic phase ordering transition over heterogeneous substrates, as it occurs in new liquid crystal biosensor devices, based on the Landau-de Gennes model for rod-like thermotropic nematic liquid crystals. Two regimes are identified due to interfacial tension inequalities: (i) nematic surface film nucleation and growth normal to the heterogeneous substrate, and (ii) nematic surface droplet nucleation and growth. The former, known as wetting regime, leads to interfacial defect shedding at the moving nematic-isotropic interface. The latter droplet regime, involves a moving contact line, and exhibits two texturing mechanisms that also lead to interfacial defect shedding: (a) small and large contact angles of drops spreading over a heterogeneous substrate, and (b) small drops with large curvature growing over homogeneous patches of the substrate. The numerical results are consistent with qualitative defect nucleation models based on the kinematics of the isotropic-nematic interface and the substrate-nematic-isotropic contact line. The results extend current understanding of phase ordering over heterogeneous substrates by elucidating generic defect nucleation processes at moving interfaces and moving contact lines.     

Modelling of synchrotron SAXS patterns of silicalite-1 zeolite during crystallization

Synchrotron small angle X-ray scattering (SAXS) was used to characterize silicalite-1 zeolite crystallization from TEOS/TPAOH/water clear sol. SAXS patterns were recorded over a broad range of length scales, enabling the simultaneous monitoring of nanoparticles and crystals occurring at various stages of the synthesis. A simple two-population model accurately described the patterns. Nanoparticles were modeled by polydisperse core-shell spheres and crystals by monodisperse oblate ellipsoids. These models were consistent with TEM images. The SAXS results, in conjunction with in situ light scattering, showed that nucleation of crystals occurred in a short period of time. Crystals were uniform in size and shape and became increasingly anisotropic during growth. In the presence of nanoparticles, crystal growth was fast. During crystal growth, the number of nanoparticles decreased gradually but their size was constant. These observations suggested that the nanoparticles were growth units in an aggregative crystal growth mechanism. Crystals grown in the presence of nanoparticles developed a faceted habit and intergrowths. In the final stages of growth, nanoparticles were depleted. Concurrently, the crystal growth rate decreased significantly.     

Computational modelling of nematic phase ordering by film and droplet growth over heterogeneous substrates

This paper presents a computational study of defect nucleation associated with the kinetics of the isotropic‐to‐nematic phase ordering transition over heterogeneous substrates, as it occurs in new liquid crystal biosensor devices, based on the Landau–de Gennes model for rod‐like thermotropic nematic liquid crystals. Two regimes are identified due to interfacial tension inequalities: (i) nematic surface film nucleation and growth normal to the heterogeneous substrate, and (ii) nematic surface droplet nucleation and growth. The former, known as wetting regime, leads to interfacial defect shedding at the moving nematic‐isotropic interface. The latter droplet regime, involves a moving contact line, and exhibits two texturing mechanisms that also lead to interfacial defect shedding: (a) small and large contact angles of drops spreading over a heterogeneous substrate, and (b) small drops with large curvature growing over homogeneous patches of the substrate. The numerical results are consistent with qualitative defect nucleation models based on the kinematics of the isotropic–nematic interface and the substrate–nematic–isotropic contact line. The results extend current understanding of phase ordering over heterogeneous substrates by elucidating generic defect nucleation processes at moving interfaces and moving contact lines.     

A Chiral Self‐Assembled Monolayer Derived from a Resolving Agent and its Performance as a Crystallization Template for an Organic Compound from Organic Solvents

A new chiral nonracemic thiol derived from a popular acidic resolving agent that incorporates a cyclic disubstituted phosphate group (phencyphos) has been prepared in enantiomerically pure form. The stereochemistry and absolute configuration were established by performing a single‐crystal X‐ray structural analysis of a synthetic intermediate. The thiol compound was used for the preparation of self‐assembled monolayers (SAMs) on both monocrystalline and polycrystalline metallic gold, which have very different surface roughness. The monolayers were used to promote the nucleation and growth of crystals from nonaqueous solutions of an organic molecule (the parent phencyphos) of similar structure to the compound present in the monolayer. The template layers influence the nucleation and growth of the phencyphos crystals despite the lack of two‐dimensional order in the surfaces. Heterogeneous nucleation of phencyphos takes place upon evaporation of either CHCl₃ or isopropanol solutions of the compound on the SAM surfaces, where the evaporation rate merely influences the size and homogeneity of the crystals. The roughness of the surface also plays an important role; the polycrystalline gold produces more homogeneous samples because of the greater number of nucleation sites. Clear evidence for nucleation and growth on the surfaces is shown by scanning electron microscopy. The variation in crystal form achieved by using different surfaces and solvents suggests that the layers are applicable for the preparation of organic crystals from organic solutions.     

Oriented monolayers prepared from lyotropic chromonic liquid crystal

We use a layer-by layer electrostatic self-assembly technique to obtain in-plane oriented aggregates of mesogenic dye molecules cast from lyotropic chromonic liquid crystals (LCLCs) on mica substrates. The aqueous solutions of dye used for deposition are in the nematic phase. Atomic force microscopy and X-ray photoelectron spectroscopy of the dried film reveal that the LCLC molecules adsorb at the charged substrate preserving ordered aggregates of elongated shape characteristic of the nematic phase in the aqueous solution. These elongated aggregates of LCLC molecules form films with in-plane orientational order and are compositionally distinct from the substrate.