Analysis of a laser-diode end-pumped intracavity frequency-doubled passively Q-switched and mode-locked Nd:GdVO<Subscript>4</Subscript>/KTP laser with a semiconductor saturable absorber

A diode-pumped passively Q-switched mode-locked (QML) intracavity frequency-doubled Nd:GdVO₄/KTP green laser with a semiconductor saturable absorber is presented. Nearly 100% modulation depth for the mode-locked green pulses can be achieved at any pump power over 1.92 W. The width of the mode-locked green pulse was estimated to be about 150 ps. The mode-locked pulse interval within the Q-switched envelope of 320 ns and the repetition rate of 97.5 kHz were obtained, at an incident pump power of 4.4 W. The repetition rate of the mode-locked green pulses inside the Q-switched envelope was 140 MHz.     

High power passively mode-locked Nd:YVO<Subscript>4</Subscript> laser using graphene oxide as a saturable absorber

We report on a passively mode-locked Nd:YVO₄ laser using a novel graphene oxide saturable absorber fabricated by vertical evaporation method. An 880 nm LD pump source was used to reduce the thermal load of the laser crystal. At the pump power of 7.4 W, 1.2 W average output power of continuous wave mode-locked laser with optical conversion efficiency of 16.2% was achieved. To the best of our knowledge, this is the highest output power of passively mode-locked solid-state laser using graphene oxide saturable absorber. The repetition rate of passively mode-locked pulse was 88 MHz with the pulse energy of 13.6 nJ.     

Diode-pumped passively Q-switched and mode-locked Nd:Lu<Subscript>0.15</Subscript>Y<Subscript>0.85</Subscript>VO<Subscript>4</Subscript> laser with a GaAs saturable absorber

By using a-cut Nd:Lu_0.15Y_0.85VO₄ mixed crystal as laser gain medium, a diode-pumped passively Q-switched and mode-locked (QML) laser with a GaAs saturable absorber in a Z-type folded cavity is demonstrated for the first time. The Q-switched mode-locked laser pulses with about 90% modulation depth are obtained as long as the pump power reached the oscillation threshold. The repetition rate of the passively Q-switched pulse envelope ranges from 50 to 186 kHz as the pump power increases from 0.915 to 6.520 W. Under an incident pump power of 6.52 W, the QML pulses with the largest average output power of 694 mW, the shortest pulse width of 200 ns and the highest pulse energy of 3.73 μJ are obtained. The mode-locked pulse width inside the Q-switched envelope is estimated to be about 275 ps. The experimental results show that Nd:Lu_0.15Y_0.85VO₄ is a promising mixed crystal for QML laser.     

Diode-pumped passively Q-switched mode-locked Nd:LuVO4 laser with a semiconductor saturable absorber mirror

We present a compact passively Q-switched mode-locked Nd:LuVO₄ laser run in a Z-type folded cavity with semiconductor saturable absorber mirror (SESAM). The repetition rates of the passively Q-switched pulse envelope ranges from 22.99 to 141.18 kHz as the pump power increased from 2.372 to 8.960 W. The repetition rates of mode-locked laser pulses in the Q-switched pulse envelope has 111 MHz determined by the cavity length and the mode-locked pulse duration is evaluated to be 257 ps. An average output power of 823.5 mW is achieved at the pump power of 8.96 W, corresponding to an optical conversion efficiency of 9.2%.     

880 nm LD pumped passive Q-switched and mode-locked Nd:YVO<Subscript>4</Subscript> laser using a single-walled carbon nanotube saturable absorber

We report a 880 nm LD pumped passive Q-switched and mode-locked Nd:YVO₄ laser using a single-walled carbon nanotube saturable absorber (SWCNT-SA). At the pump power of 7.78 W, the average out-put power of 330 mW of Q-switched and mode-locked laser with optical conversion efficiency of 4.2% was generated. The repetition rate and pulse width of the Q-switched envelope were 33 kHz and 5.6 μs, respectively. The repetition rate and pulse energy of the mode-locked pulse within the Q-switched envelope were 80 MHz and 4.1 nJ, respectively.     

Q-switched and mode-locked diode-pumped Nd:YVO4 laser with an intracavity composite semiconductor saturable absorber

We have demonstrated a passively Q-switched and mode-locked Nd:YVO₄ laser with an intracavity composite semiconductor saturable absorber (ICSSA). Stable Q-switched and mode-locked pulses with Q-switched envelope pulse duration of 180 ns and pulse repetition rate of 72 KHz have been obtained. The maximum average output power was 1.45 W at 8 W incident pump power. The repetition rate of the mode-locked pulses inside the Q-switched envelope was 154 MHz. Experimental results revealed that this ICSSA was suitable for Q-switched and mode-locked solid-state lasers.     

Diode-pumped passively Q-switched and Q-switch mode-locked Nd:YVO<Subscript>4</Subscript> laser using single-wall carbon nanotube based saturable absorber

We present the performance of diode end-pumped Nd:YVO₄ laser in Q-switched and Q-switched mode-locking oscillation using a single-walled carbon nanotube based saturable absorber, which was fabricated using similar vertical evaporation technique. The average output power, repetition rate and pulse width of the Q-switched laser output were studied with different output couplers. The maximum average output power was 130 mW. For Q-switched mode-locking operation, the repetition rate of the mode-locked pulses concentrated in the Q-switched envelope was 58 MHz. The repetition rate of the Q-switched envelope maintained at 18 kHz, while the pulse width decreased along with the increasing of pump power. The maximum average output power was 53 mW.     

Diode-pumped passively mode-locked Nd:CaNb<Subscript>2</Subscript>O<Subscript>6</Subscript> laser

We have experimentally demonstrated a diode-pumped passively mode-locked Nd:CaNb₂O₆ laser for the first time to our best knowledge. With a semiconductor saturable absorber mirror (SESAM) as a passive mode locker, the laser generated stable mode-locked pulses with pulse duration of 17.3 ps and repetition rate of 88.4 MHz. With a singe-emitter laser diode pumping, the maximum average output power of the mode-locked laser was 0.843 W, with a slope efficiency of 23%. The experimental results show the Nd:CaNb₂O₆ crystal is a promising laser gain medium for picosecond pulse generation.     

LD side-pumped high beam quality passive Q-switched and mode-locked Nd:YAG laser based on SESAM

We report a LD side-pumped fundamental-mode (Mx² = 1.35 and My² = 1.27) passive Q-switched and mode-locked Nd:YAG laser based on a semiconductor saturable absorber mirror (SESAM). At a pump current of 12.5 A, the average output power of 5.68 W with 80 kHz repetition rate and 2 μs pulse width of the Q-switched envelope was generated. The repetition rate of the mode-locked pulse within the Q-switched envelope of 88 MHz was achieved.     

Experimental study on a diode-pumped passively mode-locking Nd:GdVO<Subscript>4</Subscript>/SESAM laser

We demonstrate a low-threshold and efficient diode-pumped passively continuous wave (CW) mode-locked Nd:GdVO₄ laser with a reflective semiconductor saturable absorber mirror (SESAM). The threshold for the continuous wave was 0.36 W, and it is the lowest threshold for a continuous wave in a passively mode-locked Nd:GdVO₄ laser to our knowledge. The maximum average output power of 1.82 W was obtained at a pump power of 6.65 W with a slope efficiency of about 29%. The CW mode-locked pulse duration was measured to be about 10.5 ps with a 116-MHz repetition rate.     

Diode-pumped passively Q-switched mode-locked Nd:YLF laser with uncoated GaAs saturable absorber

We have demonstrated passively Q-switched mode-locked all-solid-state Nd:YLF laser with an uncoated GaAs wafer as saturable absorber and output mirror simultaneously. Q-switched mode-locking pulses laser with about 100% modulation depth were obtained. The average output power is 890 mW at the incident pump power of 5.76 W, corresponding to an optical slop efficiency of 20%. The temporal duration of mode-locked pulses was about 21 ps. At the Q-switched repetition rate of 30 kHz, the energy and peak power of a single pulse near the maximum of the Q-switched envelope was estimated to be about 1.6 μJ and 76 kW.     

Q-switched and continuous-wave mode-locking of a diode-pumped Nd:Gd0.64Y0.36VO4−Cr4+:YAG laser

We report on a diode-pumped passively mode-locked Nd:Gd_0.64Y_0.36VO₄ laser with a Cr⁴⁺:YAG saturable absorber. Q-switched mode locking (QML) with 90% modulation depth was obtained. The peak power of the mode-locked pulse near the maximum of the Q-switched envelope was estimated to be about 1.7 MW at the pump power of 12 W. Besides QML, continuous-wave mode locking was also experimentally realized, for the first time to our knowledge, in the laser under a strong intracavity pulse energy fluence. The mode-locked pulse width is about 2.96 ps at a repetition rate of 161.3 MHz.     

Diode-pumped high-efficiency passively Q-switched Yb:CaYAlO<Subscript>4</Subscript> laser

We experimentally demonstrated a high-efficiency passively Q-switched Yb:CaYAlO₄ (Yb:CYA) laser based on a semiconductor-saturable absorber mirror (SESAM), and the output characteristics of the laser including the average output power, repetition frequency, pulse duration, pulse energy and pulse peak power were investigated by adopting output mirrors with different transmittances. When the transmittance of the output mirror was 5% and the pump power was set at about 7.76 W, a maximum average output power of as high as 2.480 W was achieved with a slope efficiency and light-to-light efficiency of the Q-switched Yb:CYA laser of up to 37.1% and 31.2%, respectively.     

LD-pumped 1.34 μm-Q-switched and mode-locked Nd:GdVO4 laser by a V3+:YAG saturable absorber

A diode-pumped passively Q-switched and mode-locked Nd:GdVO₄ laser at 1.34 μm with V³⁺:YAG as the saturable absorber is realized in a V-type folded cavity. About 100% modulation depth of mode locking can be obtained as long as the pump power reaches the oscillation threshold. The width of the mode-locked pulse is estimated to be less than 280 ps with 200 MHz repetition rate within an about 980 ns-long Q-switched pulse envelope. A maximum output power of 200 mW and Q-switched pulse energy of 5.7 μJ is obtained.     

Stable Q-switch mode-locking of Nd:YVO<Subscript>4</Subscript> lasers with a semiconductor saturable absorber

This paper reports on a passively mode-locked and Q-switched Nd:YVO₄ laser generating picosecond pulses with an average output power exceeding 7 W. In a first step Q-switch mode-locking was obtained by self Q-switching of a mode-locked oscillator with appropriate cavity design, pump power and output coupling. In a second system the Q-switching was actively controlled and stabilized by modulating the resonator internal losses with an acousto-optic modulator. In the Q-switch mode-locking operation the laser provided 12.8 ps long mode-locked pulses with a repetition rate of 80 MHz. The repetition rate of the Q-switch envelope was 185 kHz. The maximum pulse energy of a single ps pulse was 0.55 μJ which is 5.5 times the pulse energy measured for cw mode locking. The total energy of the pulses within the Q-switch envelope was 42 μJ. PACS  42.55.Xi; 42.60.Fc; 42.60.Gd     

Performance of 2 μm Tm:YAP pulse laser based on a carbon nanotube absorber

We demonstrated the first use of carbon nanotube as a saturable absorber in the Q-switched and Q-switched mode-locking of a diode pumped Tm:YAP operating at 2 μm. At the incident pump power of 8.64 W, the minimum Q-switched pulse width of 255.1 ns, and the maximum peak power 53.1 W can be obtained with the corresponding repetition rate of 21.76 kHz. The performance of a diode-pumped passively Q-switched mode-locked Tm:YAP laser with high repetition rate formed with a folded cavity. As high as 780 mW average output power was produced in QML laser. The repetition rate of the mode-locked pulse inside the Q-switched envelope was 244.1 MHz. The dependence of the operational parameters on the pump power was also investigated experimentally.     

Diode-pumped passively mode-locked Nd:GdVO<Subscript>4</Subscript> laser with a GaAs saturable absorber mirror

We report on a diode end-pumped passively mode-locked Nd:GdVO₄ laser. By using a GaAs wafer simultaneously as the saturable absorber and the output coupler, stable continuous-wave mode locking was achieved. The pulse width was measured to be 18.9 picoseconds at a repetition rate of 370 MHz. The most remarkable property of the laser is that its repetition rate can be changed from 370 MHz to 3.348 GHz by simply changing the cavity length. An average output power of 3.46 W at a 3.348 GHz repetition rate was obtained with a 14 W pump power. To our knowledge, this is the first demonstration of a passively mode-locked Nd:GdVO₄ laser using a GaAs wafer as the saturable absorber. PACS 42.55.Rz; 42.60.Fc; 42.55.Xi.     

Passively Q-switched and mode-locked diode-pumped Nd:YVO4 laser with LT-GaAs output coupler

We have demonstrated an efficient and compact passively Q-switched and mode-locked (QML) 1064 nm Nd:YVO₄ laser by using a low temperature grown GaAs (LT-GaAs) saturable absorber as well as an output coupler. Stable QML with envelope duration as short as 10 ns and Q-switched repetition rate of 36 kHz was obtained. It is the shortest envelope duration as far as we know, and it is so short that it can be used as Q-switching pulses directly. At 6.9 W of the incident pump power, average output power of 1.24 W was achieved and the corresponding peak power and energy of a single Q-switched pulse were 3.44 kW and 34.4 μJ, respectively. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of 780 MHz.     

High-power passively Q-switched mode-locking Nd:GdVO4 laser with LT-InGaAs saturable absorber

The generation of passively Q-switched mode-locking (QML) pulse has been obtained from a diode-pumped Nd:GdVO₄ laser with a LT-InGaAs wafer as saturable absorber as well as output coupler. Under the incident pump power of 10 W, an average output power of QML was 1.8 W with a Q-switched repetition rate of 280 kHz. The pulse duration of Q-switched pulse is about 160 ns and mode-locked pulse within the Q-switched envelope had a repetition rate of 410 MHz. It is indicated that the present LT-InGaAs is a very promising device in the field of mode locking solid-state laser, and we are sure that it will be complete pure cw mode locking with single beam output easily after further optimizing in the parameter such as saturation fluence, modulation depth, recovery time and damage threshold in semiconductors.     

Passive mode locking of a diode-pumped Nd:Gd 0.64 Y 0.36 VO 4 laser with a GaAs saturable absorber mirror

We report a diode-pumped Nd:Gd_0.64Y_0.36VO₄ laser passively mode locked by using a GaAs saturable absorber mirror. Both the Q-switched and continuous-wave (CW) mode locking were experimentally realized. The CW mode-locked pulses have a pulse width of about 8.8 ps at a repetition rate of 161.3 MHz. Limited by the available pump power, a maximum output power of 2.47 W was obtained for the CW mode-locked pulses with a slope efficiency of about 26.6%.