电子在激光驻波场中运动产生的太赫兹及X射线辐射研究

采用单电子模型和经典辐射理论分别对低能和高能电子在线偏振激光驻波场中的运动和辐射过程进行了研究. 结果表明: 垂直于激光电场方向入射的低速电子在激光驻波场中随着光强的增大, 逐渐从一维近周期运动演变为二维折叠运动, 并产生强的微米量级波长的太赫兹辐射; 高能电子垂直或者平行于激光电场方向入射到激光驻波场中, 都会产生波长在几个纳米的高频辐射; 低能电子与激光驻波场作用中, 激光强度影响着电子的运动形式、辐射频率以及辐射强度; 高能电子入射时, 激光强度影响了电子高频辐射的强度, 电子初始能量影响着辐射的频率; 电子能量越高, 产生的辐射频率越大. 研究表明可以由激光加速电子的方式得到不同能量的电子束, 并利用电子束在激光驻波场的辐射使之成为太赫兹和X射线波段的小型辐射源. 研究结果可以为实验研究和利用激光驻波场中的电子辐射提供依据.     

Theoretical investigation of tunable polarized broadband terahertz radiation from magnetized gas plasma

The mechanism of terahertz(THz) pulse generation with a static magnetic field imposed on a gas plasma is theoretically investigated. The investigation demonstrates that the static magnetic field alters the electron motion during the optical field ionization of gas, leading to a two-dimensional asymmetric acceleration process of the ionized electrons. Simulation results reveal that elliptically or circularly polarized broadband THz radiation can be generated with an external static magnetic field imposed along the propagation direction of the two-color laser. The polarization of the THz radiation can be tuned by the strength of the external static magnetic field.     

Characteristic features of generation of few-cycle pulses in infrared and terahertz spectral ranges upon interaction of two femtosecond pulses of different frequencies in air

The results of a theoretical analysis of the generation of broadband radiation in the infrared and terahertz spectral ranges upon the excitation of plasma in air by two femtosecond pulses at the fundamental and second-harmonic frequencies of a Ti-sapphire laser are presented. It is found that the appearance of long-wavelength radiation in a strong field of pulses of different frequencies can be described in terms of strongly anharmonic oscillations of optical electrons, whereby electrons are pulled far away from their atoms; these oscillations are accompanied by cascade transitions of electrons from their ground state to a bound excited state, followed by a transition to the continuum. It is shown that the generated infrared and terahertz radiation appears in the form of pulses containing a few oscillations of the light field. The efficiency of terahertz generation varies periodically with an increase in the interaction length of the femtosecond pulses of different frequencies.     

Terahertz-pulse emission through laser excitation of surface plasmons in a metal grating

The second-order processes of optical-rectification and photoconduction are well known and widely used to produce ultrafast electromagnetic pulses in the terahertz frequency domain. We present a new form of rectification that relies on the excitation of surface plasmons in metal films deposited on a shallow grating. Multiphoton ionization and ponderomotive acceleration of electrons in the enhanced evanescent field of the surface plasmons results in a femtosecond current surge and emission of terahertz electromagnetic radiation. Using gold, this rectification process is third or higher-order in the incident field.     

Effect of sheath potential on electromagnetic radiation emitted from the rear surface of a metallic foil target

In ultra-intense laser--matter interactions, intense electric fields formed at the rear surface of a foil target may have strong influences on the motion of energetic electrons, and thereby affect the electromagnetic emissions from the rear surface, usually ascribed to transition radiation. Due to the electric fields, transition radiation occurs twice and bremsstrahlung radiation also happens because the electrons will cross the rear surface twice and have large accelerations. In the optic region, transition radiation is dominant. The radiation spectrum depends on the electric field only when the electrons are monochromatic, and becomes independent of the electric field when the electrons have a broadband momentum distribution. Therefore, in an actual experiment, the electric field at the rear surface of a foil could not be studied just with the measurement of optic emissions. In the terahertz region, both bremsstrahlung and transition radiations should be taken into account, and the radiation power could be enhanced in comparison with that without the inclusion of bremsstrahlung radiation. The frequency at which the maximum terahertz radiation appears depends on the electric field.     

Terahertz emission from square wells in a longitudinal electric field

Terahertz emission accompanying heating of two-dimensional electrons by a strong electric field applied along size-quantized GaAs/AlGaAs layers is observed and investigated. The emission is due to indirect optical transitions of hot electrons in the bottom size-quantization band. The experimentally obtained emission spectra are compared with the spectra calculated taking into account scattering of electrons by optical phonons, impurities, and interfacial roughness and electron-electron scattering. Satisfactory agreement is obtained. The temperature of the hot electrons is determined from a comparison of the spectra. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 7, 507–511 (10 April 1998)     

Terahertz generation from electron- and neutron-irradiated semiconductor crystal surfaces

Terahertz generation from the InP, InSb, GaAs and GaSe crystal surfaces excitated by femtosecond laser pulses has been studied. The terahertz spectra emitted from the native crystals and the crystals previously irradiated by high-energy neutrons or electrons have been recorded. Also, a simulation of the terahertz emission process has been performed. A weak terahertz signal generated from the GaSe native surface has been registered. In the case of electron-irradiated GaSe, the signal is increased several fold because of increased laser radiation absorption.     

Study of hot electrons by measurement of optical emission from the rear surface of a metallic foil irradiated with ultraintense laser pulse

Hot electrons and optical emission are measured from the rear surface of a metallic foil. The spectra of the optical emission in the near infrared region have a sharp spike around the wavelength of the incident laser pulse. The optical emission is ascribed to coherent transition radiation due to microbunching in the hot electron beam. It is found that the optical emission closely correlates with the hot electrons accelerated in resonance absorption.     

Terahertz radiation induced by the Wannier-Stark localization of electrons in a natural silicon carbide superlattice

Intense terahertz electroluminescence from SiC structures with a miniband electron spectrum caused by the natural superlattice has been observed. The shape of the terahertz radiation line, the linear dependence of the position of its maximum on the bias voltage, the typical value of the field required to induce the radiation, and the prevailing polarization of the radiation along the superlattice axis indicate that the observed radiation results from to the excitation of stationary Bloch oscillations of electrons in the natural silicon carbide superlattice.     

Absorption and emission of terahertz radiation in doped GaAs/AlGaAs quantum wells

Spontaneous emission of terahertz radiation from structures with GaAs/AlGaAs quantum wells in a longitudinal magnetic field has been studied. It is shown that some bands in the emission spectrum can be related to radiative electron transitions between resonant and localized impurity states, as well as to the transitions with participation of subband states. The temperature dependence of the equilibrium intraband absorption of terahertz radiation and its modulation in a longitudinal electric field in GaAs/AlGaAs quantum wells has been investigated.     

Spectroscopy of non-equilibrium electrons in quantum Hall conductors

Spectroscopy of local cyclotron emission from the hot spots is carried out on a GaAs/AlGaAs heterostructure two-dimensional electron gas system at B=6 T (ν=2.5) by applying a terahertz scanning microscope. The spectra of CE at the current entry and exit corners (hot spots) are remarkably broadened towards lower frequencies with increasing I up to 300 μA, indicating substantial relevance of non-equilibrium electrons generated in higher-level LLs; in terms of effective electron temperature, T_E reaching as high as 300 K is suggested while T_E=25–30 K on an average in the surrounding region (within a distance of 50 μm) about the hot point.     

Balance-equation approach to terahertz-field-driven magnetotransport in semiconductors

We investigate the magnetotransport in semiconductors under the influence of a dc or slowly-varying electric field, an intense polarized radiation field of terahertz frequency, and a uniform magnetic field, being in arbitrary directions and having arbitrary strengths. Effective force- and energy-balance equations are derived by using a gauge that the magnetic field and the high-frequency radiation field are described by a vector potential and the dc or slowly-varying field by a scalar potential, and by distinguishing the slowly-varying velocity from the rapidly-oscillating velocity related to the high-frequency field. These equations, which include the elastic photon process and all orders of multiphoton absorption and emission processes, are applied to the examination of the effect of a terahertz radiation on the magnetophonon resonance of the longitudinal resistivity in the transverse configuration in nonpolar and polar semiconductors. We find that the previous zero-photon resonance peaks are suppressed by the irradiation of the terahertz field, while many new peaks, which may be related to multiphoton absorption and emission processes, emerge and can become quite distinct, at moderately strong radiation field. Received 17 May 1999     

Observation of frequency-locked coherent terahertz Smith-Purcell radiation

We report the observation of enhanced coherent Smith-Purcell radiation (SPR) at terahertz (THz) frequencies from a train of picosecond bunches of 15 MeV electrons passing above a grating. SPR is more intense than other sources, such as transition radiation, by a factor of Ng, the number of grating periods. For electron bunches that are short compared with the radiation wavelength, coherent emission occurs, enhanced by a factor of Ne, the number of electrons in the bunch. The electron beam consists of a train of Nb bunches, giving an energy density spectrum restricted to harmonics of the 17 GHz bunch train frequency, with an increased energy density at these frequencies by a factor of Nb. We report the first observation of SPR displaying all three of these enhancements, NgNeNb. This powerful SPR THz radiation can be detected with a high signal to noise ratio by a heterodyne receiver.     

THz emission from semiconductor surfaces

We provide a review of experimental and theoretical work on electromagnetic terahertz pulse emission from semiconductor surfaces excited by femtosecond laser radiation. The main terahertz emission mechanisms are analysed. The terahertz emission from InAs and Ge is explained by the photo-Dember effect and electric field induced optical rectification. Electronic band structure and carrier scattering mechanisms are investigated by means of terahertz emission and absorption spectroscopy in InAs, InSb and Ge. To cite this article: V.L. Malevich et al., C. R. Physique 9 (2008).     

Features of the Development of Electron-Optical Systems for Pulsed Terahertz Traveling-Wave Tubes (Review)

We present an analysis of the current state and development of pulsed amplifying traveling-wave tubes for terahertz radiation operation at frequencies of at least 200 GHz, as well as the development prospects of the principles of creating electron-optical and magnetic systems. The possibility of using field emission cathodes based on carbon nanotubes for constructing an electron-optical system with the compression of a sheet beam is discussed. A numerical simulation of a field emission electron gun forming a sheet electron beam for traveling-wave tubes of the terahertz range is carried out.

     

Percolation-enhanced generation of terahertz pulses by optical rectification on ultrathin gold films

Emission of pulses of electromagnetic radiation in the terahertz range is observed when ultrathin gold films on glass are illuminated with femtosecond near-IR laser pulses. A distinct maximum is observed in the emitted terahertz amplitude from films of average thickness just above the percolation threshold. Our measurements suggest that the emission is through a second-order nonlinear optical rectification process, enhanced by the excitation of localized surface plasmon hot spots on the percolated metal film.     

TERAHERTZ SPECTRA EMITTED FROM HOT CARRIERS IN TWO-DIMENSIONAL SEMICONDUCTORS

We propose a simple method to calculate the spectrum of spontaneous terahertz (THz) emission from hot carriers in two-dimensional semiconductors by means of transport quantities, which are easily obtained during the process of solving the transport problem using the recently developed balance-equation approach for THz-driven transport. The method has been applied to examine the surface emission from a GaAs/AlGaAs heterojunction and the edge emission from a GaAs-based multiple quantum-well system subjected to strong dc biases. The theoretical results obtained are in reasonably good agreement with measurements.     

A theoretical study of harmonic generation in a short period AlGaN/GaN superlattice induced by a terahertz field

Based on an improved energy dispersion relation, the terahertz field induced nonlinear transport of miniband electrons in a short period AlGaN/GaN superlattice is theoretically studied in this paper with a semiclassical theory. To a short period superlattice, it is not precise enough to calculate the energy dispersion relation by just using the nearest wells in tight binding method: the next to nearest wells should be considered. The results show that the electron drift velocity is 30% lower under a dc field but 10% higher under an ac field than the traditional simple cosine model obtained from the tight binding method. The influence of the terahertz field strength and frequency on the harmonic amplitude, phase and power efficiency is calculated. The relative power efficiency of the third harmonic reaches the peak value when the dc field strength equals about three times the critical field strength and the ac field strength equals about four times the critical field strength. These results show that the AlGaN/GaN superlattice is a promising candidate to convert radiation of frequency ω to radiation of frequency 3ω or even higher.     

半绝缘GaAs光电导开关产生太赫兹波电场屏蔽效应的二维Monte Carlo模拟

利用Ensemble-Monte Carlo模拟方法，对不同实验条件下半绝缘GaAs(SI-GaAs)光电导开关作为偶极辐射天线在辐射太赫兹电磁波(太赫兹波)中体内电场的分布以及空间电荷屏蔽效应对太赫兹波辐射的影响进行了模拟.载流子的时域空间电场分布表明:用高能量激光脉冲触发低压偏置的GaAs开关，空间电荷屏蔽是限制太赫兹波辐射功率的一个重要因素，并且空间电荷屏蔽能够引起太赫兹波呈现双极性.当高能量飞秒激光脉冲以全电极间隙触发大孔径光电导天线时，空间电荷电场屏蔽效应对太赫兹波的影响不大. 关键词： 光电导开关 Ensemble-Monte Carlo模拟 辐射场屏蔽 空间电荷屏蔽     

太赫兹片上系统和基于微纳结构的太赫兹超宽谱源的研究进展

目前太赫兹辐射信号的功率不高,辐射带宽也较窄,这些对于生物化学、含能材料的太赫兹检测应用领域来说是一大限制因素,因此如何获得宽谱高功率的太赫兹源对于太赫兹时域光谱系统的发展是非常重要的;另一方面,常规的太赫兹系统是在自由空间传输探测的,测量过程需要在氮气或者干燥空气环境中进行,以克服空气中水的吸收干扰,同时自由空间中的光场与物质相互作用的模式又降低了物质检测的灵敏度,这对于痕量物质检测来说构成了挑战.面对这一问题,太赫兹片上系统利用微纳结构中的局域场效应实现对物质的低浓度检测,此方案有助于解决这一应用难题.综上所述,本文分成以下两部分阐述:首先阐述了纳米金属薄膜作为新的太赫兹源,它可以同时产生非相干的和相干的太赫兹信号,其输出为超过100 THz的太赫兹-红外辐射,功率高达10 mW,这种超宽谱和高功率现象主要是由于非相干的热辐射效应引起的;第二,阐述了基于不同传输线结构、不同基底材料的太赫兹片上系统结构设计和光谱应用.基于共面带状线结构和聚合物材料基底的太赫兹片上系统有着较低的损耗,能够实现超过2 THz带宽的测量和生物化学应用.