Studies on influence of zinc immersion and fluoride on nickel electroplating on magnesium alloy AZ91D

The effect of zinc immersion and the role of fluoride in nickel plating bath were mainly investigated in nickel electroplating on magnesium alloy AZ91D. The state of zinc immersion, the composition of zinc film and the role of fluoride in nickel plating bath were explored from the curves of open circuit potential (OCP) and potentiodynamic polarization, the images of scanning electron microscopy (SEM) and the patterns of energy dispersive X-ray (EDX). Results show that the optimum zinc film mixing small amount of Mg(OH)₂ and MgF₂ is obtained by zinc immersion for 30-90 s. The corrosion potential of magnesium alloy substrate attached zinc film will be increased in nickel plating bath and the quantity of MgF₂ sandwiched between magnesium alloy substrate and nickel coating will be reduced, which contributed to produce nickel coating with good performance. Fluoride in nickel plating bath serves as an activator of nickel anodic dissolution and corrosion inhibitor of magnesium alloy substrate. 1.0-1.5 mol dm⁻³ of F⁻ is the optimum concentration range for dissolving nickel anode and protecting magnesium alloy substrate from over-corrosion in nickel plating bath. The nickel coating with good adhesion and high corrosion resistance on magnesium alloy AZ91D is obtained by the developed process of nickel electroplating. This nickel layer can be used as the rendering coating for further plating on magnesium alloys.     

Coating formation by plasma electrolytic oxidation on ZC71/SiC/12p-T6 magnesium metal matrix composite

Plasma electrolytic oxidation (PEO) of a ZC71/SiC/12p-T6 magnesium metal matrix composite (MMC) is investigated in relation to coating growth and corrosion behaviour. PEO treatment was undertaken at 350 mA cm⁻² (rms) and 50 Hz with a square waveform in stirred 0.05 M Na₂SiO₃.5H₂O/0.1 M KOH electrolyte. The findings revealed thick, dense oxide coatings, with an average hardness of 3.4 GPa, formed at an average rate of ∼1 μm min⁻¹ for treatment times up to 100 min and ∼0.2 μm min⁻¹ for later times. The coatings are composed mainly of MgO and Mg₂SiO₄, with an increased silicon content in the outer regions, constituting <10% of the coating thickness. SiC particles are incorporated into the coating, with formation of a silicon-rich layer at the particle/coating interface due to exposure to high temperatures during coating formation. The distribution of the particles in the coating indicated growth of new oxide at the metal/coating interface. The corrosion rate of the MMC in 3.5% NaCl is reduced by approximately two orders of magnitude by the PEO treatment.     

Electrical properties of bulk and grain boundaries of scandia-stabilized zirconia co-doped with yttria and ceria

The electrical properties of bulk and grain boundaries of scandia-stabilized zirconia co-doped with yttria and ceria have been determined as a function of temperature (300 < T/°C < 700) and oxygen partial pressure [10^− 24 ≤ p(O₂)/bar ≤ 1, T = 700 °C] by application of impedance spectroscopy. The yttria and ceria contents of Ce_xY_0.2 − xSc_0.6Zr_3.2O_8 − δ (0 ≤ x ≤ 0.2) have been varied systematically. Homogeneous samples have been prepared by means of a sol-gel (glycine-nitrate) combustion process. The ionic conductivity in air is almost independent of composition with typical values around 0.03-0.04 S cm^− 1 for the bulk at 700 °C. A significant decrease of the ionic conductivities of bulk and grain boundaries is found for samples co-doped with ceria at low oxygen partial pressures [p(O₂) < 10^− 15 bar, T = 700 °C]. Activation energies for the ionic transport in oxidizing (air) and reducing (1%-H₂/Ar) atmospheres have been extracted from Arrhenius-plots. The oxygen nonstoichiometry in 1%-H₂/Ar has been investigated by employing thermogravimetry. The decrease of the ionic conductivity under reducing conditions is accompanied by an increase of the corresponding high temperature activation energy of the bulk, which is interpreted in terms of defect association or clustering.     

Synthesis and materials properties of transparent conducting In2O3 films prepared by sol-gel-spin coating technique

Transparent conducting indium oxide (In₂O₃) thin films have been prepared on glass substrates by the simple sol-gel-spin coating technique. These films have been characterized by X-ray diffraction, resistivity and Hall effect measurements, optical transmission, scanning electron microscopy and atomic force microscopy for their structural, electrical, optical and morphological properties. The influence of spin parameters, number of coating, process temperature on the quality of In₂O₃ films are studied. In the operating range of deposition, 400-475 °C, all the films showed predominant (2 2 2) orientation. Films deposited at optimum process conditions exhibited a resistivity of 2×10⁻² Ω cm along with the average transmittance of about 80% in the visible spectral range (400-700 nm).     

Chemical diffusion in molybdenum disulphide

Ceramic molybdenum disulphide (MoS₂) was equilibrated at an ambient sulphur vapour partial pressure p(S₂), 10 Pa<p(S₂)<1000 Pa. After the step change of p(S₂) to a new value, the equilibration kinetics was monitored by measuring electrical conductivity. The application of the solution of Fick's second law (with the initial condition: no concentration gradient in specimen and the boundary condition: surface concentration constant) to the kinetic data gave the chemical diffusion coefficient. The chemical diffusion coefficient, D_chem, determined at 1273 K, was D_chem=(3.20±0.32)*10⁻⁷ cm² s⁻¹ and was found to be independent of sulphur vapour partial pressure. The usefulness of transient electrical conductivity method for determining real values of diffusion data was discussed in terms of defect structure of the studied material.     

ZrB2-based Ohmic contacts to p-GaN

The annealing temperature dependence of contact resistance and layer stability of ZrB₂/Ti/Au and Ni/Au/ZrB₂/Ti/Au Ohmic contacts on p-GaN is reported. The as-deposited contacts are rectifying and transition to Ohmic behavior for annealing at ≥750 °C, a significant improvement in thermal stability compared to the conventional Ni/Au Ohmic contact on p-GaN, which is stable only to <600 °C. A minimum specific contact resistance of ∼2 × 10⁻³ Ω cm⁻² was obtained for the ZrB₂/Ti/Au after annealing at 800 °C while for Ni/Au/ZrB₂/Ti/Au the minimum value was 10⁻⁴ Ω cm⁻² at 900 °C. Auger Electron Spectroscopy profiling showed significant Ti, Ni and Zr out diffusion at 750 °C in the Ni/Au/ZrB₂/Ti/Au while the Ti and Zr intermix at 900 °C in the ZrB₂/Ti/Au. These boride-based contacts show promise for contacts to p-GaN in high temperature applications.     

Influence of treating frequency on microstructure and properties of Al2O3 coating on 304 stainless steel by cathodic plasma electrolytic deposition

Alumina ceramic coatings were fabricated on 304 stainless steel by cathodic plasma electrolytic deposition (CPED). Influence of treating frequency of the power supply on the microstructure and properties of the coatings were studied. The results indicated that coatings obtained at various frequencies on 304 stainless steels were all composed of α-Al₂O₃ and γ-Al₂O₃, and α-Al₂O₃ was the dominant phase. The contents of α-Al₂O₃ decreased gradually in a very small rate with increasing the frequency and γ-Al₂O₃ gradually increased. The surface of alumina ceramic coating was porous. With increasing the frequency, the coating surface gradually became less rough and more compact, resulting in low surface roughness. The bonding strength of Al₂O₃ coating was higher than 22 MPa and was not strongly affected by treating frequency. With increasing the frequency, the alumina coated steels showed better and gradually increasing corrosion resistance than the uncoated one in 3.5% NaCl solution. The coating steel with desirable corrosion resistance was obtained at 800 Hz whose corrosion current potential and corrosion density were −0.237 V and 7.367 × 10⁻⁸ A/cm², respectively.     

Investigations on the thermo-chemical stability and electrical conductivity of K-doped Ba3 − xKxCaNb2O9 − δ (x = 0.5, 0.75, 1, 1.25)

In this paper, we report the synthesis, crystal structure and electrical transport properties of new K-doped Ba₃CaNb₂O₉ (BCN) and investigate their chemical stability in H₂O and pure CO₂ at elevated temperature. The powder X-ray diffraction (PXRD) of Ba_2.5K_0.5CaNb₂O_9 − δ, Ba_2.25K_0.75CaNb₂O_9 − δ, Ba₂KCaNb₂O_9 − δ, and Ba_1.75K_1.25CaNb₂O_9 − δ showed the formation of a single-phase double perovskite (A₃BB^/₂O₉)-like cell with a lattice constant of a ∼ 2a_p (where a_p is a simple perovskite cell of ∼ 4 Å). Perovskite-like structure was found to be retained after treating with CO₂ at 700 °C and also after boiling H₂O for 120 h. The lattice constant of CO₂ and H₂O treated samples was found to be comparable to that of the corresponding as-prepared compound. The total electrical conductivity of all the investigated K-doped BCN increases with increasing K content in BCN in various atmospheres, including air, dry H₂, wet N₂ and wet H₂. The electrical conductivity in dry and wet H₂ atmospheres was found to be higher than that of air in the temperature range of 300-700 °C, while in wet N₂ a slightly lower value was observed. Among the compounds investigated in the present study Ba_1.75K_1.25CaNb₂O_9 − δ showed the highest total electrical conductivity of 1 × 10^− 3 S/cm in dry H₂ at 700 °C with an activation energy of 1.28 eV in the temperature range of 300-700 °C.     

The sodium diffusion in aluminium-oxide

The transport of Na through the polycrystalline ceramic arc tube of high intensity discharge lamps has been investigated. This complex process consists of several steps: solution in the ceramics, diffusion through the ceramics, leaving the bulk phase, evaporation from the surface. Among the listed processes the kinetics of the diffusion was examined in the temperature range 400-1200 °C, separately from other disturbing effects. X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) were used to determine the concentration depth profiles. The obtained results confirmed that the grain boundary diffusion plays an important role in the transport process of sodium through the ceramic wall. The bulk and the grain boundary diffusion coefficients and the temperature dependencies of these transport processes have been determined. The activation energy of Na bulk diffusion is 56.5 ± 6.7 kJ/mol at 900-1200 °C, respectively the activation energies of Na grain boundary diffusion amount to 97.5 ± 21.6 kJ/mol in the temperature range 700-1100 °C and 7.7 ± 4.0 × 10⁻² kJ/mol at 400-700 °C. The preexponential factor of the bulk diffusion was found to be D_o = 5.1 × 10⁻¹⁵ ± 9.5 × 10⁻¹⁷ cm²/s in the temperature range 900-1200°C, whereas the preexponential factors of grain boundary diffusion are D_o = 1.1 × 10⁻¹⁰ ± 1.1 × 10⁻¹¹ cm²/s at 700-1100 °C and D_o = 7.5 × 10^-15 ± 1.5 × 10⁻¹⁷ cm²/s at 400-700 °C.     

Study of La0.8Sr0.2Co0.2Cr0.8O3 − δ as a candidate coating material for the positive current collector in Na/S battery

Perovskite La_0.8Sr_0.2Co_0.2Cr_0.8O_3 − δ (LSCC) ceramic synthesized by the conventional ceramic processing technique was studied as a novel coating material for the cathode current collector in Na/S battery. Its structure, electrical conductivity, density and thermal expansion coefficient (TEC) were investigated. The corrosion performance of LSCC was in particular evaluated by electrochemical techniques in combination with long-term dip-immersion tests. The results indicated that LSCC exhibited excellent corrosion resistance in molten sodium tetrasulfide at 350 °C. The corrosion current density i_corr (0.081 mA cm^− 2) was much lower than that of 316 L stainless steel by approximately two orders of magnitude. The corrosion rate of LSCC deduced from immersion test was as low as about 12 μm year^− 1.     

Characterization of microarc oxidation coatings formed on AM60B magnesium alloy in silicate and phosphate electrolytes

Microarc oxidation coatings on AM60B magnesium alloy were prepared in silicate and phosphate electrolytes. Structure, composition, mechanical property, tribological, and corrosion resistant characteristics of the coatings was studied by scanning electron microscope (SEM), X-ray diffraction (XRD) and microhardness analyses, and by ball-on-disc friction and potentiodynamic corrosion testing. It is found that the coating produced from the silicate electrolyte is compact and uniform and is mainly composed of MgO and forsterite Mg₂SiO₄ phases, while the one formed in phosphate electrolyte is relatively porous and is mainly composed of MgO phase. The thick coating produced from a silicate electrolyte possesses a high hardness and provides a low wear rate (3.55 × 10⁻⁵ mm³/Nm) but a high friction coefficient against Si₃N₄ ball. A relatively low hardness and friction coefficient while a high wear rate (8.65 × 10⁻⁵ mm³/Nm) is recorded during the testing of the thick coating produced from a phosphate electrolyte. Both of these types of coatings provide effective protection for the corrosion resistance compared with the uncoated magnesium alloy. The coating prepared from the silicate electrolyte demonstrates better corrosion behavior due to the compacter microstructure.     

Structural and electrical properties of AlN films deposited using reactive RF magnetron sputtering for solar concentrator application

AlN is an interesting material with some excellent properties like high hardness (>11 GPa), high temperature stability (>2400 °C), good electrical resistivity (>10¹⁰ Ω cm), and good thermal conductivity (>100 W/m K). These properties make it useful in the field of photo voltaic systems. Cooling of solar cells in solar concentrator application is of major concern because high temperature reduces their efficiency. In the present work we deposited AlN coating, with and without an Al interlayer, on various substrates like Si, quartz, and copper using RF magnetron sputtering. Deposition conditions such as Al interlayer (deposition time = 5-20 min), Ar:N₂ ratio (N₂% = 0-75%) and substrate bias (0 and −50 V) were changed in order to study their effect on coating properties. Coating surface roughness increased from 0.05 to 0.15 μm with increase in Al interlayer thickness. The coating thickness decreased from 4.4 to 3.1 μm with increase in N₂ gas % and films grew in (0 0 2) orientation. Films deposited on copper using Al interlayer showed good electrical resistance of ∼10¹³ Ω. Films deposited on copper without Al interlayer showed presence of voids or micro cracks and poor electrical properties. AlN films deposited at −50 V bias show cracking and delamination.     

Influence of Ni deposition and subsequent N ion implantation at different substrate temperatures on nano-structure and corrosion behaviour of type 316 and 304 stainless steels

Ni thin films of 250 nm thicknesses were coated on type 304 and 316 stainless steels and post N⁺ ion implanted at 15 keV energy with a fluence of 5 × 10¹⁷ N⁺ cm⁻² at different substrate temperatures. Surface nano-structure of the samples were analysed using X-ray diffraction (XRD), atomic force microscopy (AFM) before corrosion test and scanning electron microscopy (SEM) after corrosion test. Corrosion behaviour of the samples in 1.0 M H₂SO₄ solution was investigated by means of potentiodynamic technique. Nano-structure and crystallography of the films showed the development of Ni₃N(1 1 1) and Ni₄N(2 0 0) orientations with a minimum surface roughness and grain size at 400 K substrate temperature. The highest corrosion resistance with a corrosion current of 0.01 μA cm⁻² (for SS(316)) and 0.56 μA cm⁻² (for SS(304)) was achieved in case of samples which were N⁺ ion implanted at 400 K. Results for both types of stainless steels showed good agreement and the better performance of SS(316) was attributed to the 2% molybdenum contents in the alloy composition of this type of stainless steel, which enhances the effectiveness of nitrogen in retarding the corrosion process.     

Kinetic studies of chlorobenzene reactions with hydrogen atoms and phenyl radicals and the thermochemistry of 1-chlorocyclohexadienyl radicals

Atomic H and Cl were monitored by time-resolved resonance spectroscopy in the vacuum ultraviolet, following 193 nm laser flash photolysis of C₆H₅Cl and mixtures with NH₃, over 300-1020 K and with Ar bath gas pressures from 30 to 440 mbar. Below 550 K simple exponential decays of [H] were observed, and attributed to addition to form chlorocyclohexadienyl radicals. This addition was reversible over 550-630 K and the equilibrium constant was determined by a third law approach. The addition rate constant can be summarized as (1.51 ± 0.11) × 10⁻¹¹exp((−1397 ± 29)/T) cm³ molecule⁻¹ s⁻¹ (300-630 K, 1σ uncertainties), and the C-H bond dissociation enthalpy in 1-chlorocyclohexadienyl was determined to be 108.1 ± 3.3 kJ mol⁻¹ at 298 K. At higher temperatures the photolysis of chlorobenzene yielded H atoms, which is attributed to the reaction of phenyl with chlorobenzene with a rate constant of (4.5 ± 1.8) × 10⁻¹⁰exp((−4694 ± 355)/T) cm³  molecule⁻¹ s⁻¹ over 810-1020 K. These and other reaction pathways are discussed in terms of information about the potential energy surface obtained via B3LYP/6-311G(2d,d,p) density functional theory.     

Structural evolution of electroless Ni-P coating on Al-12 wt.% Si alloy during heat treatment at high temperatures

The work is concerned with the high-temperature heat treatment of an Al-12 wt.% Si alloy coated by an electroless Ni-P layer. The electroless deposition took place on a pre-treated substrate in a bath containing nickel hypophosphite, nickel lactate and lactic acid. Resulting Ni-P deposit showed a thickness of about 8 μm. The coated samples were heat-treated at 200-550 °C/1-24 h. LM, SEM, EDS and XRD were used to investigate phase transformations. Adherence to the substrate was estimated from the scratch test and microhardness of the heat-treated layers was also measured. It is found that various phase transformations occur, as both temperature and annealing time increase. These include (1) amorphous Ni-P → Ni + Ni₃P, (2) Al + Ni → Al₃Ni, (3) Ni₃P → Ni₁₂P₅ + Ni, (4) Ni₁₂P₅ → Ni₂P + Ni, and (5) Al₃Ni + Ni → Al₃Ni₂. The formation of intermetallic phases, particularly Al₃Ni₂, leads to significant surface hardening, however, too thick layers of intermetallics reduce the adherence to the substrate. Based on the growth kinetics of the intermetallic phases, diffusion coefficients of Ni in Al₃Ni and Al₃Ni₂ at 450-550 °C are estimated as follows: D(Al₃Ni, 450 °C) ≈ 6 × 10⁻¹² cm² s⁻¹, D(Al₃Ni, 550 °C) ≈ 4 × 10⁻¹¹ cm² s⁻¹, D(Al₃Ni₂, 450 °C) ≈ 1 × 10⁻¹² cm² s⁻¹ and D(Al₃Ni₂, 550 °C) ≈ 1 × 10⁻¹¹ cm² s⁻¹. Mechanisms of phase transformations are discussed in relation to the elemental diffusion.     

Synthesis and third-order optical nonlinearities of nickel complexes of 8-hydroxyquinoline derivatives

A nickel complex of 5-(acrylamido)methyl-8-hydroxyquinoline, bis-(5-(acrylamido)methyl-8-hydroxyquinolino) nickel(II) (Ni(AAMQ)₂) has been synthesized and its third-order nonlinear optical properties was investigated with respect to that of bis-(8-hydroxyquinolino) nickel(II) (NiQ₂) by single beam Z-scan technique. The real parts (γ_R) of the molecular second-order hyperpolarizabilities were −6.0 × 10⁻⁴⁶ and −5.5 × 10⁻⁴⁶ m⁵/v² for NiQ₂ and Ni(AAMQ)₂, respectively, indicative of similar nonlinear refraction both in sign and in magnitude. After substitution of an acrylamidomethyl group to the 8-hydroxyquinoline (8-HQ) ligand, the nonlinear absorption coefficient of Ni(AAMQ)₂ was enhanced by more than two times. The corresponding imaginary part (γ_I) of the molecular second-order hyperpolarizability was 3.4 × 10⁻⁴⁶ m⁵/v² for Ni(AAMQ)₂ while 1.6 × 10⁻⁴⁶ m⁵/v² for NiQ₂. The increase in nonlinear absorption was attributed to the substitution effect and the enhanced transition dipole moment due to the participation of δ-donor group of CH₂ in the molecular conjugation.     

Preparation of transparent conductive TiO2:Nb thin films by pulsed laser deposition

This study investigated the optical and electrical properties of Nb-doped TiO₂ thin films prepared by pulsed laser deposition (PLD). The PLD conditions were optimized to fabricate Nb-doped TiO₂ thin films with an improved electrical conductivity and crystalline structure. XRD analyses revealed that the deposition at room temperature in 0.92 Pa O₂ was suitable to produce anatase-type TiO₂. A Nb-doped TiO₂ thin film attained a resistivity as low as 6.7 × 10⁻⁴ Ω cm after annealing at 350 °C in vacuum (<10⁻⁵ Pa), thereby maintaining the transmittance as high as 60% in the UV-vis region.     

The effect of duration of diffusion on Ag diffusion coefficients in YBa2Cu3O7

The Ag diffusion in superconducting YBa₂Cu₃O₇ (YBaCuO) ceramic has been studied over the duration of the diffusion range 5-24 h in the temperature range 700-850 °C by the energy-dispersive X-ray fluorescence (EDXRF) technique. For the excitation of silver atoms, an annular Am-241 radioisotope source (50 mCi) emitting 59.543 keV photons was used. The temperature dependences of silver diffusion coefficients in grains (D₁) and over the grain boundaries in the range 700-850 °C (D₂) are described by the relations D₁=1.4×10⁻² exp[−(1.18±0.10)/kT] and D₂=3.1×10⁻⁴ exp[−(0.87±0.10)/kT].     

Nitration of phenols in reversed micelle systems and enhanced oxidation ability of dilute nitric acid (less than 2.0 molarity) in concentrated salt solutions

In a previous paper, we have reported that dilute nitric acid in reversed micelle systems can oxidize the Br⁻ ion to Br₂ and proposed that the nitryl (or nitronium) ion NO₂⁺ should be the active species in the oxidation process. Nitration of phenol in reversed micelle systems with dilute nitric acid, CHCl₃/CTAC/H₂O (2.0 mol dm^− 3 HNO₃ in the 1.0% (v/v) H₂O phase), was performed at 35 °C to obtain 2- and 4-nitrophenols, where CTAC represents cetyltrimethylammonium chloride. In similar CTAC and AOT reversed micelle (CHCl₃ or heptane/AOT) systems, 4-methylphenol was converted to 2-nitro-4-methylphenol, where AOT stands for sodium bis(2-ethylhexyl) sulfosuccinate. In aqueous 2.0 mol dm^− 3 HNO₃ solution accompanied by 4.0 mol dm^− 3 LiCl (and a small amount of LiBr as the bromide resource), trans-1,4-dibromo-2-butene was successfully brominated to 1,2,3,4-tetrabromobutane. This result is a good evidence that the Br⁻ ion can be oxidized to Br₂ in dilute nitric acid (2.0 mol dm^− 3) provided that it contains concentrated salts. At 20-40 °C, the apparent oxidation-reaction rate constants (k/s^− 1) of Br⁻ to Br₂ were evaluated in 0.1-2.0 mol dm^− 3 HNO₃ solution accompanied by concentrated LiCl (3.5-9.0 mol dm^− 3). For chloride salts, the cation effects increased as Et₄N⁺ ? Na⁺ < Li⁺ < Ca²⁺ < Mg²⁺. Even the evolution of Cl₂ was demonstrated from < 2.0 mol dm^− 3 HNO₃ solution containing concentrated LiCl, MgCl₂, and CaCl₂ as well as AlCl₃, therefore, an indirect oxidation mechanism of the Br⁻ ion through Cl₂ was proposed as follows: 2Cl⁻ + NO₂⁺ → Cl₂ + NO₂⁻; 2Br⁻ + Cl₂ → Br₂ + 2Cl⁻.     

Electrochemical corrosion behaviors of a-C:H and a-C:NX:H films

The a-C:H and a-C:N_X:H films were deposited onto silicon wafers using radio frequency (rf) plasma enhanced chemical vapor deposition (PECVD) and pulsed-dc glow discharge plasma CVD, respectively. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) were used to characterize chemical nature and bond types of the films. The results demonstrated that the a-C:H film prepared by rf-CVD (rf C:H) has lower I_D/I_G ratio, indicating smaller sp² cluster size in an amorphous carbon matrix. The nitrogen concentrations of 2.9 at.% and 7.9 at.% correspond to carbon nitride films prepared with rf and pulse power, respectively.Electrochemical corrosion performances of the carbon films were investigated by potentiodynamic polarization test. The electrolyte used in this work was a 0.89% NaCl solution. The corrosion test showed that the rf C:H film exhibited excellent anti-corrosion performance with a corrosion rate of 2 nA cm⁻², while the carbon nitride films prepared by rf technique and pulse technique showed a corrosion rate of 6 nA cm⁻² and 235 nA cm⁻², respectively. It is reasonable to conclude that the smaller sp² cluster size of rf C:H film restrained the electron transfer velocity and then avoids detriment from the exchange of electrons.