Effect of a positive temperature coefficient of resistance in thin films of doped strontium-barium titanate

Thin films of doped semiconducting barium-strontium titanate (Ba,Sr)TiO₃ are prepared by pulsed laser ablation. It is shown that the crystal structure, morphology, and electrical properties of (Ba,Sr)TiO₃ thin films are determined primarily by the actual ablation conditions. The ablation regimes of deposition permitting preparation of uniform polycrystalline thin films with a composition close to that of the target and with grain sizes larger than 0.1 μm are established. These samples have a positive temperature coefficient of resistance in the phase transition region. The change in the resistivity can be as much as 100%.     

Lead-free ferroelectric thin films obtained by pulsed laser deposition

Na_0.5Bi_0.5TiO₃-BaTiO₃ (NBT-BT) thin films grown by pulsed laser deposition have been investigated by X-ray diffraction, scanning electron microscopy, and dielectric spectroscopy in order to clarify the role of substrate temperature on crystalline structure, grain morphology, and dielectric properties. We have shown that the structural and dielectric properties of NBT-BT thin films with composition at morphotropic phase boundary (6% BT) critically depend on the substrate temperature: small variations of this parameter induce structural changes, shifting the morphotropic phase boundary toward tetragonal or rhombohedral side. Higher deposition temperature (1000 K) favor the formation of rhombohedral phase, films deposited at 923 K and 973 K have tetragonal symmetry at room temperature. Grains morphology depends also on the deposition temperature. Atomic force micrographs show grains with square or rectangular shape in a compact structure for films grown at lower temperatures, while grains with triangular shape in a porous structure are observed for films grown at 1000 K. Dielectric spectroscopy measurements evidenced the phase transition between ferroelectric and antiferroelectric phase at 370 K. Films grown at 1000 K shown low electrical resistivity due to their porous structure. High dielectric constant values (about 800 at room temperature and 2700 at 570 K) have been obtained for films grown at temperatures up to 973 K.     

Optical and structural studies on Ba(Mg1/3Ta2/3)O3 thin films obtained by radiofrequency assisted pulsed plasma deposition

Single-phase Ba(Mg_1/3Ta_2/3)O₃ thin films were prepared by radiofrequency plasma beam assisted pulsed laser deposition (RF-PLD) starting from a bulk ceramic target synthesized by solid state reaction. Atomic force microscopy, X-ray diffraction and spectroscopic ellipsometry were used for morphological, structural and optical characterization of the BMT thin films. The X-ray diffraction spectra show that the films exhibit a polycrystalline cubic structure. From spectroscopic ellipsometry analysis, the refractive index varies with the thin films deposition parameters. By using the transmission spectra and assuming a direct band to band transition a band gap value of ≈4.72 eV has been obtained.     

Effect of deposition temperature on orientation and electrical properties of (K0.5Na0.5)NbO3 thin films by pulsed laser deposition

Lead-free ferroelectric K_0.5Na_0.5NbO₃ (KNN) thin films have been prepared on Pt/TiO₂/SiO₂/Si substrates by pulsed laser deposition process. The structures, crystal orientations and electrical properties of thin films have been investigated as a function of deposition temperature from 680 °C to 760 °C. It is found that the deposition temperature plays an important role in the structures, crystal orientations and electrical properties of thin films. The crystallization of thin films improves with increasing deposition temperature. The thin film deposited at 760 °C exhibits strong (0 0 1) preferential orientation, large dielectric constant of 930 and the remnant polarization of 8.54 μC/cm².     

Characteristics of N-doped TiO2 thin films grown on unheated glass substrate by inductively coupled plasma assisted dc reactive magnetron sputtering

N-doped TiO₂ thin films have been deposited on unheated glass substrates by an inductively coupled plasma (ICP) assisted direct current (dc) reactive magnetron sputtering. All films were produced in the metallic mode of sputtering in order to achieve a high deposition rate. The structures and properties of the N-doped TiO₂ films were studied by X-ray diffraction, X-ray photoelectron spectroscopy, transmission electron microscopy, field emission scanning electron microscopy and UV–Vis spectrophotometer. Experimental results show that we can obtain well crystallized N-doped anatase phase TiO₂ thin films at low deposition temperature and at high deposition rate by using the ICP assisted dc reactive magnetron sputtering process. The doping of nitrogen into TiO₂ lattices leads to a smooth shift of the absorption band toward visible light regions.     

Pulsed laser deposition of NdNiO3 thin films

We report the structural and transport properties of NdNiO₃ thin films prepared via pulsed laser deposition over various substrates. The films were well textured and c-axis oriented with good crystalline properties. The electrical resistivity of the films undergoes a metal-insulator transition, depending on the deposition process. Well-defined first order metal-insulator phase transition (T_MI) was observed in the best quality films without high pressure processing. Various growth conditions such as substrate temperature, oxygen pressure and thickness were varied to see their influence on T_MI. Deposition temperature was found to have a great impact on the electrical and structural properties of these films. Further the films deposited on LaAlO₃ substrate were found to be highly oriented with uniform grain size as observed from X-ray diffraction and atomic force microscopy, whereas those on Si substrate were polycrystalline, dense and randomly oriented.     

Growth and structure of Bi0.5(Na0.7K0.2Li0.1)0.5TiO3 thin films prepared by pulsed laser deposition technique

Bi_0.5(Na_0.7K_0.2Li_0.1)_0.5TiO₃ (BNKLT) thin films were prepared on Pt/Ti/SiO₂/Si substrates by pulsed laser deposition (PLD) technique. The films prepared were examined by using X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The effects of the processing parameters, such as oxygen pressure, substrate temperature and laser power, on the crystal structure, surface morphology, roughness and deposition rates of the thin films were investigated. It was found that the substrate temperature of 600 °C and oxygen pressure of 30 Pa are the optimized technical parameters for the growth of textured film, and all the thin films prepared have granular structure, homogeneous grain size and smooth surfaces.     

Electron beam evaporated LaF3 thin films prepared by different temperatures and deposition rates

LaF₃ thin films were prepared by electron beam evaporation with different temperatures and deposition rates. Microstructure properties including crystalline structure and surface roughness were investigated by X-ray diffraction (XRD) and optical profilograph. X-ray photoelectron spectroscopy (XPS) was employed to study the chemical composition of the films. Optical properties (transmittance and refractive index) and laser induce damage threshold (LIDT) at 355 nm of the films were also characterized. The effects of deposition rate and substrate temperature on microstructure, optical properties and LIDT of LaF₃ thin films were discussed, respectively.     

PLD and RF-PLD synthesis of Ba<Subscript>0.6</Subscript>Sr<Subscript>0.4</Subscript>TiO<Subscript>3</Subscript> ferroelectric thin films for electrically controlled devices

Ba_0.6Sr_0.4TiO₃ (BST) bulk ceramic synthesized by solid state reaction was used as target for thin films grown by pulsed laser deposition (PLD) and radiofrequency beam assisted PLD (RF-PLD). The X-ray diffraction patterns indicate that the films exhibit a polycrystalline cubic structure with a distorted unit cell. Scanning Electron Microscopy investigations showed a columnar microstructure with size of spherical grains up to 150 nm. The capacitance–voltage (C–V) characteristics of the BST films were performed by applying a DC voltage up to 5 V. A value of 280 for dielectric constant and 12.5% electrical tunability of the BST capacitor have been measured at room temperature.     

Ultra-fast laser ablation and deposition of TiO2

In this work we report on the properties of the ablation plume and the characteristics of the films produced by ultra-fast pulsed laser deposition (PLD) of TiO₂ in vacuum. Ablation was induced by using pulses with a duration of ≈300 fs at 527 nm. We discuss both the composition and the expansion dynamics of the TiO₂ plasma plume, measured by exploiting time- and space-resolved emission spectroscopy and gated imaging. The properties of the TiO₂ nanoparticles and nanoparticle-assembled films were characterized using different techniques, i.e. environmental scanning electron microscopy (ESEM), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). It is suggested that most of the material decomposes in the form of nanoparticles.     

Surface characterization of TiO2 thin films obtained by high-energy reactive magnetron sputtering

This paper presents the results of surface characterization of TiO₂ thin films deposited on different substrates by the use of high-energy reactive magnetron sputtering. Structural investigations carried out by X-ray diffraction (XRD) and atomic force microscopy (AFM) have shown a strong influence of both the substrate type, and its placement in the deposition chamber (relative to the sputtering target), on the structural properties of the films. In all cases, there is evidence for pseudoepitaxial growth. XRD examination showed existence of TiO₂-rutile phase with preferred (1 1 0) orientation and AFM measurements revealed nanocrystalline structure directly after deposition. X-ray photoelectron spectroscopy analysis showed that the TiO₂ films have stoichiometric composition.     

TiO2 nanoparticle thin film deposition by matrix assisted pulsed laser evaporation for sensing applications

The MAPLE technique has been used for the deposition of nanostructured titania (TiO₂) nanoparticles thin films to be used for gas sensors applications. An aqueous solution of TiO₂ nanoparticles, synthesised by a novel chemical route, was frozen at liquid nitrogen temperature and irradiated with a pulsed ArF excimer laser in a vacuum chamber. A uniform distribution of TiO₂ nanoparticles with an average size of about 10 nm was deposited on Si and interdigitated Al₂O₃ substrates as demonstrated by high resolution scanning electron microscopy-field emission gun inspection (SEM-FEG). Energy dispersive X-ray (EDX) analysis revealed the presence of only the titanium and oxygen signals and FTIR (Fourier transform infra-red) revealed the TiO₂ characteristic composition and bond. A comparison with a spin coated thin film obtained from the same solution of TiO₂ nanoparticles is reported. The sensing properties of the films deposited on interdigitated substrates were investigated, too.     

Preparation of transparent conductive TiO2:Nb thin films by pulsed laser deposition

This study investigated the optical and electrical properties of Nb-doped TiO₂ thin films prepared by pulsed laser deposition (PLD). The PLD conditions were optimized to fabricate Nb-doped TiO₂ thin films with an improved electrical conductivity and crystalline structure. XRD analyses revealed that the deposition at room temperature in 0.92 Pa O₂ was suitable to produce anatase-type TiO₂. A Nb-doped TiO₂ thin film attained a resistivity as low as 6.7 × 10⁻⁴ Ω cm after annealing at 350 °C in vacuum (<10⁻⁵ Pa), thereby maintaining the transmittance as high as 60% in the UV-vis region.     

Characteristics of Ba0.5Sr0.5TiO3 thin films grown by ultraviolet-assisted pulsed laser deposition

The microstructure and properties of barium strontium titanate (BST) thin films grown by an in situ ultraviolet-assisted (UV-assisted) pulsed laser deposition (UVPLD) technique are reported in this paper. In comparison with BST films grown by conventional pulsed laser deposition (PLD) under similar conditions, but without UV illumination, the UVPLD-grown films exhibited improved structural, electrical, and optical properties. X-ray photoelectron spectroscopy showed that when exposed to atmosphere, Ba atoms from the outermost layers formed a thin layer of barium carbonate, which negatively affects the film electrical characteristics. UVPLD-grown films exhibited a smaller amount of Ba atoms within the carbonate layer, resulting in better electrical characteristics. The dielectric constant of 40-nm-thick films deposited at 650 °C by UVPLD and PLD were determined to be 281 and 172, respectively. The leakage current density of the UVPLD-grown films was in the mid-10^-8 A/cm² range, a factor of 2 lower than that obtained from PLD-grown films.     

Synthesis and electrical transport of SrHfO3 thin films grown on a SrTiO3 (001) substrate using a pulsed laser deposition

We report the deposition of epitaxial SrHfO₃ thin films on a SrTiO₃ (001) substrate in different substrate temperatures by using a pulsed laser deposition (PLD) method. We carried out X-ray diffraction (XRD), X-ray reflectivity (XRR), reciprocal space mapping (RSM), atomic force microscopy (AFM), resistivity, and Hall measurements to examine the crystallinity, morphology and electrical properties of these films. All films showed smooth and uniform morphology with small root mean square (RMS) roughness. While the SrHfO₃ sample grown at 750 °C is metallic, the films deposited at 600 °C, 650 °C, and 700 °C show an upturn at low temperatures. The temperature dependence of the metallic parts was analyzed based on the parallel resistor model that includes resistivity saturation. On the other hand, the low-temperature upturn was found to be well described by a weak localization mechanism. We also observed the possible emergence of non-Fermi liquid behavior when the upturn disappeared. All SrHfO₃ films have p-type charge carriers.     

Microstructural investigation of CaxCo4Sb12 films prepared by pulsed laser deposition

Ca_xCo₄Sb₁₂ skutterudite thin films have been synthesized by pulsed laser deposition from a Nd:YAG laser working at 532 or 355 nm. The influence of deposition temperature, laser fluence and working atmosphere on the structure and morphology of the films has been studied. The characterization has been carried out by X-ray diffraction, atomic force microscopy and scanning electron microscopy. Laser wavelength proved to be the most significant parameter to produce the skutterudite phase. PACS 81.15.Fg; 68.55.Jk; 81.05.Bx     

Structural and optical properties of electrohydrodynamically atomized TiO2 nanostructured thin films

In this paper, we report an alternate technique for the deposition of nanostructured TiO₂ thin films using the electrohydrodynamic atomization (EHDA) technique using polyvinylpyrrolidone (PVP) as a stabilizer. The required parameters for achieving uniform TiO₂ films using EHDA are also discussed in detail. X-ray diffraction results confirm that the TiO₂ films were oriented in the anatase phase. Scanning electron microscope studies revealed the uniform deposition of the TiO₂. The purity of the films is characterized by using Fourier transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS), confirming the presence of Ti–O bonding in the films without any organic residue. The optical properties of the TiO₂ films were measured by UV-visible spectroscopy, which shows that the transparency of the films is nearly 85% in the visible region. The current–voltage (I–V) curve of the TiO₂ thin films shows a nearly linear behavior with 45 mΩ?cm of electrical resistivity. These results suggest that TiO₂ thin films deposited via the EHDA method possess promising applications in optoelectronic devices.     

Influence of the thickness on structural,magnetic and electrical properties of La0.7Ca0.3MnO3 thin film

We have studied the effect of thickness on the structural, magnetic and electrical properties of La_0.7Ca_0.3MnO₃ thin films prepared by pulsed laser deposition method using X-ray diffraction, electrical transport, magneto-transport and dc magnetization. X-ray diffraction pattern reflects that all films have c-axis epitaxial growth on LaAlO₃ substrate. The decrease in out-of-plane cell parameter specifies a progressive relaxation of in the plane compressive strain as the film thickness is increases. From the dc magnetization measurements, it is observed that ferromagnetic to paramagnetic transition temperature increases with increase in the film thickness. Magneto-resistance and temperature coefficient of resistance increases with film thickness and have maximum value near its metal to insulator transition temperature.     

Effects of nitrogen doping on optical properties of TiO2 thin films

The potential for extending the optical absorption range of TiO₂ by doping with nonmetallic elements was examined in nitrogen-containing TiO₂ thin films. Thin films of TiO_2-xN_x were synthesized on glass and silicon substrates by ion-beam-assisted deposition to obtain a wide range of nitrogen concentrations. The compositions of the films were determined by Rutherford backscattering spectrometry and X-ray photoelectron spectroscopy. The structures of the films were analyzed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy. The optical properties of the films were measured by UV-Vis spectroscopy and ellipsometry. A characteristic decreasing trend in band-gap values of the films was observed within a certain range of increasing dopant concentrations. As the nitrogen concentration increased, the structure of the films evolved from a well-defined anatase to deformed anatase. The reduced band gaps are associated with the N 2p orbital in the TiO_2-xN_x films. PACS 78.66.-w; 78.20.Ci     

Influence of MoS2 deposition time on the photocatalytic activity of MoS2/ V,N co-doped TiO2 heterostructure thin film in the visible light region

Electron-hole separation and a narrow band-gap are essential steps to obtain efficient photocatalysis, towards which the use of co-catalysts or co-doped-TiO₂ photocatalysts has become a widely used strategy. In this article, the combination of MoS₂ and co-doping of V, N is the goal to achieve high performance photocatalysts. We synthesized MoS₂/V, N co-doped TiO₂ heterostructure thin film by sol-gel and chemical bath deposition methods. Herein, we investigated the influence of deposition time of MoS₂ layer on visible-photocatalytic activity of the obtained samples. The thin films were characterized by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and UV–vis spectroscopy techniques. Visible-photocatalytic activity of these samples were evaluated on the removal of methylene blue (MB) under visible light irradiation. The results show that the aforementioned heterostructure thin films have better photocatalytic activities than those of TiO₂, MoS₂ and V, N co-doped TiO₂ counterparts in visible light region. The mechanism for increasing visible-photocatalytic property of the heterostructure thin films is discussed in detail. We find that MoS₂/V, N co-doped TiO₂ heterostructure thin film at MoS₂ deposition time of 45-min shows the highest photocatalytic performance in the visible light region with MB photodegradation rate about 99% for 150 min and the degradation rate constant is 2.06 times higher than that of V and N co-doped TiO₂ counterpart.