Magnetic, magnetocaloric, and lattice properties of the La(Fe x Si1 − x )13 ferromagnets

The magnetic and lattice properties of a sample of La(Fe_0.86Si_0.14)₁₃ ferromagnet have been measured. The influence that neutron irradiation has on the physical properties of this ferromagnet is studied. It is shown that the irradiation of this sample by a fluence of 3 × 10¹⁹ n/cm² increases the lattice constant a and the Curie temperature (T _C ) as the volume magnetostriction decreases. A model of ferromagnet is proposed which satisfactorily describes the dependence a(T) of the initial and irradiated samples and their magnetic properties. The temperature dependence of the change in entropy when switching the magnetic field on and off is calculated. It is established that the change in both the magnetic and lattice parts of the total entropy at the magnetic phase transition must be taken into account for La(Fe _x Si_{1 ? x} )₁₃ compounds.     

X-ray diffraction study of the crystallographic characteristics of TlInS x Se2 − x solid solutions

Crystallographic parameters of TlInS _x Se_{2 ? x} solid solutions have been measured by X-ray diffraction. Dependences of the unit-cell parameters on the composition are determined. It is established that the values of parameters a, b, and c and the angle β decrease with an increase in x. It is shown that the TlInS _x Se_{2 ? x} system includes a continuous series of solid solutions based on the TlInSe₂ compound with tetragonal symmetry at x values ≤ 0.4, while at x ≥ 0.6 solid solutions based on the TlInS₂ compound with a monoclinic structure are formed.     

Structure of the interfaces of the InxGa1 − x As quantum well from X-ray diffraction data

The structure of the interfaces of a 10-nm-thick In_xGa_{1 ? x} As quantum well buried in the semiconductor GaAs matrix has been studied by the method of double-crystal X-ray diffractometry. It has been shown that, in comparison with the well-known photoluminescence method, the X-ray diffraction method has considerable advantages in characterization of multilayer systems. The detailed analysis of the rocking curves provided the reconstruction of the profiles of indium distributions in quantum wells for specimens with different indium concentrations.     

Effect of germanium on the microstructure and the magnetic properties of Fe–B–Si amorphous alloys

In this work, we present a systematic study on the crystallization kinetics and the magnetic properties of melt-spun Fe₈₀B₁₀Si_10 ? xGe_x (x = 0.0 ? 10.0) amorphous alloys. The activation energy for crystallization, determined by differential scanning calorimetry, displayed a strong dependence on the Ge content, reflecting a deleterious effect on the alloys' thermal stability and their glass forming ability with increasing Ge concentration. On the other hand, the alloys exhibited excellent soft magnetic properties, i.e., high saturation magnetization values (around 1.60 T), alongside Curie temperatures of up to 600 K. Complementary, for increasing Ge substitution, the ferromagnetic resonance spectra showed a microstructural evolution comprising at least two different magnetic phases corresponding to a majority amorphous matrix and to Fe(Si, Ge) nanocrystallites for x ≥ 7.5.     

Growth of Ga x In1 − x Sb solid solution single crystals by the Czochralski method

Crystallography Reports - Ga x In1 ? x Sb solid solution single crystals (x = 0.03–0.09) have been grown. The dislocation density and electrophysical parameters are measured. A...     

Effect of rare-earth elements on the plasma etching behavior of the RE–Si–Al–O glasses

The effect of rare-earth elements on the plasma etching behavior of oxide glasses were investigated to develop the window glass for a plasma processing chamber in the semiconductor industry. Aluminosilicate glasses with various rare-earth elements (Y, Gd and La) were prepared and their optical transmittance and plasma etching depth were evaluated. The plasma etching behavior of the glasses was estimated by X-ray photoelectron spectroscopy analysis at the fluorine plasma exposure surface of the glasses. The rare-earth element in the glass was highly related to various properties such as density, molar volume, mechanical properties and plasma etching depth. The cationic field strength of the rare-earth element more strongly affected the plasma etching depth of the glasses than the sublimation point of the fluorine compounds and this may be related to the plasma etching condition.     

Nanostructured crystals of fluorite phases Sr1 − x R x F2 + x (R are rare earth elements) and their ordering: 5. A study of the ionic conductivity of as-grown Sr1 − x R x F2 + x crystals

Crystallography Reports - The ionic conductivity σ of Sr1 ? x R x F2 + x crystals (R = Y, La-Lu) has been measured in the temperature range of 324–933 K. The isomorphic...     

Concentration dependences of the unit-cell parameters of nonstoichiometric fluorite-type Na0.5 − x R 0.5 + x F2 + 2x phases (R = rare-earth elements)

Unit-cell parameter a of the cubic phases with a varying composition Na_{0.5 ? x} R _{0.5 + x} F_{2 + 2x} (R = Gd-Lu and Y) and with a fluorite-type structure, is described within an accuracy of ±0.003 Å, by the formula a = 4.454 + 0.874r ₃ + x(6.7238r ₃ ? 7.259) where r ₃ is the Shannon “crystal ionic radius” R ³⁺ at c.n. = 8.     

Local lattice strains in the system of cubic Zn0.999Fe0.001S x Se1 − x (0 ≤ x ≤ 1) crystals

The structure of cubic Zn_0.999Fe_0.001S _x Se_{1 ? x} (0 ≤ x ≤ 1) crystals obtained by vapor-phase chemical transport has been investigated by thermal-neutron diffraction. The diffraction patterns of these crystals are found to exhibit previously unknown diffuse-scattering effects related to local static atomic displacements in the metastable fcc lattice. It is substantiated that the tendency to form polytypes, which is characteristic to a greater extent of zinc sulfide, can be a key factor of instability in the lattice of compounds belonging to the series of anion-substituted solid solutions under study.     

Investigation of the structure and properties of (K x (NH4)1 − x )3H(SO4)2 single crystals

The influence of isomorphous replacement in the cation sublattice on the kinetics of the phase transition in single crystals of the solid solutions (K _x (NH₄)_{1 ? x} ) _m H _n (SO₄)_{(m + n)/2} · yH₂O belonging to the K₃H(SO₄)₂-(NH₄)₃H(SO₄)₂-H₂O salt system was studied. Superproton phase transitions for the end compositions of this system have been found earlier. The optical and thermal properties of crystals with the composition (K,NH₄)₃H(SO₄)₂ in the temperature range from 295 to 500 K were investigated, and the crystal structure was determined at 295 K. The results of the study and the comparison with the literature data show that the replacement of potassium atoms with ammonia leads to a fundamental change in the kinetics of the phase transition, the phase-transition temperature remaining virtually unchanged.     

Crystallochemical model of ion-transport percolation in nonstoichiometric M 1−x RxF2+x phases with the defect CaF2-type structure

A crystallochemical model of ion-transport percolation in M _1?x R_xF_2+x (M = Ca, Sr, Ba; R = RE) solid solutions with the “defect” CaF₂-type structure has been suggested. Within this model, the percolation thresholds in M _1?x R_xF_2+x crystals with tetrahedral R ₄F_26? and octahedral R ₆F_37? clusters are considered, whose existence is highly probable in these disordered fluorite phases. It is established that the calculated percolation thresholds x _c = 2.8 mol % for nnn (next nearest neighbors) [(R ₆F₃₇) _M6F32 ?F_i] and x _c = 4.7 mol % for nn (nearest neighbor) [(R ₄F₂₆) _M6F32 ?F_i] are in satisfactory accord with the experimental percolation thresholds determined from the conductometric data.     

Structural mechanisms of superionic conductivity in M 1−x R x F2+x single crystals

The relationship between the superionic transport in fluorite phases M _{1 ? x} R _x F_{2 + x} (M = Ca, Sr, or Ba; R are rare earth elements) and their defect structure has been analyzed. The superionic conductivity of M _{1 ? x} R _x F_{2 + x} crystals is provided by the high concentration of charge carriers. However, the carrier concentration is several tens of times lower than the concentration of anionic defects, which is explained by the presence of defect regions (DRs), which partially block carriers. The dependence of the superionic conductivity of M _{1 ? x} R _x F_{2 + x} phases on the RF₃(x) content has a percolation nature. Crystals of these phases are divided into two groups with respect to the percolation threshold: x _{p, 1} = 2–3 mol % RF₃ and x _{p, 2} = 7–8 mol % RF₃. The corresponding DR volumes are 3000–4000 ų (x _{p, 1}) and 500–700 ų (x _{p, 2}). The x _{p, 1}, and x _{p, 2} values correlate, respectively, with the octahedral cubic {M _{14 ? p} R _p F_{68 ? 69}} and tetrahedral {M _{4 ? p} R _p F₂₆} clusters, which are DR cores. The DR model and cluster structure are indicative of the heterogeneity of nonstoichiometric M _{1 ? x} R _x F_{2 + x} crystals at the nanoscale level with respect to the chemical composition and the electrical and crystallochemical (coordinations of M and R) characteristics.     

Displacements in the cationic motif of nonstoichiometric fluorite phases Ba1 − x R x F2 + x as a result of the formation of {Ba8[R 6F68–69]} clusters: I. The Ba0.78Tm0.22F2.22 crystals

The displacements of Ba²⁺ cations in the cationic motif of Ba_0.78Tm_0.22F_2.22 crystals, which are representatives of nonstoichiometric fluorite phases Ba_{1 ? x} R _x F_{2 + x} , are proved for the first time with the use of precision investigations of the fine atomic structure. It is shown that the cation displacements, like the previously revealed displacements in the anionic motif, reflect the formation of {Ba₈[R ₆F_68–69]} superclusters of structural defects with nanometer linear sizes. The Ba ²⁺ cations are displaced from the fluorite crystallographic positions 4a (space group Fm $ \bar 3 The displacements of Ba²⁺ cations in the cationic motif of Ba_0.78Tm_0.22F_2.22 crystals, which are representatives of nonstoichiometric fluorite phases Ba_{1 − x} R _x F_{2 + x} , are proved for the first time with the use of precision investigations of the fine atomic structure. It is shown that the cation displacements, like the previously revealed displacements in the anionic motif, reflect the formation of {Ba₈[R ₆F_68–69]} superclusters of structural defects with nanometer linear sizes. The Ba ²⁺ cations are displaced from the fluorite crystallographic positions 4a (space group Fm m) to the positions 32f. The static nature of the cation displacements is confirmed by the fact that these displacements are retained at a temperature of 110 K. The correctness of the interpretation of the correlation between the cation displacements and the formation of superclusters of structural defects is supported by the coincidence of the intercationic distances determined in the disordered phase Ba_0.78Tm_0.22F_2.22 with those found in the previously studied ordered phases Ba₄ R ₃F₁₇ (R = Y, Yb). The model with splitting of cationic positions is appropriate for testing in structural investigations of crystals of the fluorite phases M _{1 − x} R _x F_{2 + x} at room temperature. Original Russian Text ? A.M. Golubev, L.P. Otroshchenko, V.N. Molchanov, B.P. Sobolev, 2008, published in Kristallografiya, 2008, Vol. 53, No. 6, pp. 1023–1030.     

On the decolorization property of Fe–Mo–Si–B alloys with different structures

Decolorization property of Fe–Mo–Si–B ribbons with different structures was investigated, and kinetic analyses elucidated that the decolorization process could be described by a pseudo-first-order kinetic model. Amorphous ribbons were proved to decolorize Acid Orange II solutions much more rapidly than amorphous/nanocrystalline ribbons at the same temperatures. Activation energies of the decolorization process by amorphous ribbons and amorphous/nanocrystalline ribbons were obtained according to Arrhenius equation, and they were proved more or less the same because of the existence of amorphous phase in both ribbons, while the different reactive site amount was considered to lead to the different decolorization rates for the two ribbons with different structures.     

Nanostructured crystals of fluorite phases Sr1 − x R x F2 + x and their ordering: 9. The defect crystal and real structure of quenched fluorite phases Sr1 − x Ce x F2 + x (x = 0–0.5)

A Sr_0.7Ce_0.3F_2.3 crystal (CaF₂ type, sp. gr. $Fm\bar 3m$ ), obtained by quenching from melt, has been studied for the first time by X-ray diffraction. Fluorine vacancies and interstitial anions are found in the 8c and 32f sites, respectively. The defect ratio in the Sr_0.7Ce_0.3F_2.3 structure corresponds to the tetrahedral cluster configuration of defects {Sr_{4 ? n} Ce _n F₂₆}. The defect structure of quenched (at a rate of ～25 K/min) crystal differs from that of a crystal grown from melt (cooling at a rate of ～3 K/min) by the displacement of some cations (presumably Ce³⁺) along the threefold axis to the 32f site and the anisotropy of thermal vibrations of ions in the cluster core (F _int(32f)3). The concentration dependence of the lattice parameters of quenched Sr_{1 ? x} Ce _x F_{2 + x} phases (x = 0–0.5) is described by a third-order polynomial: a = 5.80009 + 1.166518 × 10^?3 x ? 1.124969 × 10^?5 x ² + 8.258155 × 10^?8 x ³. The compositional dependence of microdistortions is also nonlinear; maximum microdistortions are observed in the SrF₂ crystal. They decrease with an increase in the cerium concentration x to ～ 0.35. The minimum in the range x = 0.30–0.35 correlates with a composition corresponding to the peak (at x ～ 0.29) in the melting curves of the fluorite phase estimated from the phase diagram of the SrF₂-CeF₃ system (the method of thermal analysis).     

The crystallization kinetics of nanothin amorphous TlGa1 − x Ge x Se2 films

Crystallography Reports - The kinetics of phase transformations of amorphous Ge-doped TlGaSe2 films has been investigated by kinematic electron diffraction. It is shown that the crystallization of...     

Fracture toughness evaluation of precursor-derived Si–C–N ceramics using the crack opening displacement approach

Difficulties in the fabrication of representative test specimens and in the application of suitable test procedures e.g., in the measurement of the test parameters viz., load, crack length etc., have so far limited the intrinsic fracture mechanical characterization of the precursor-derived ceramics (PDC). The present work reports the evaluation of the crack tip toughness (K_I0) of Si–C–N ceramics, using the novel crack opening displacement (COD) approach. The fully dense PDC test specimens synthesized from a poly(ureamethylvinyl)silazane precursor covered material structures ranging from partly organic amorphous to inorganic nano-crystalline states. Critically loaded cracks were achieved using either a special loading fixture or with Vickers indentation. Crack tip CODs were measured with the atomic force microscopy (AFM). Fractography of the fracture surfaces were performed using topographic, frictional and phase contrast AFM. The measured K_I0 values ranged from 0.6 to 1.2 MPa m^1/2. The net change in crack resistance was affected by the stripping of OFC-hydrogen atoms in the amorphous materials and by the segregated turbostratic graphite phase in the phase-separated materials. Nano-scale crack deflection observed even in the amorphous materials indicated the presence of structural and compositional inhomogeneities within the amorphous network.     

Ab initio calculation of vibrational frequencies of GexSe1−x glass

We have used the density functional theory to make the models of Ge_xSe_1?x glass for which the energy is a minimum. The clusters, Ge₂Se₂, Ge₂Se₃, Ge₃Se, Ge₃Se₂, Ge₄Se, GeSe₃, GeSe₄, chain mode zig-zag Ge₄Se₃, corner sharing GeSe₄, and edge sharing Ge₂Se₆, have been made successfully and their vibrational spectra have been calculated from the first principles. We are able to optimize the bond distances as well as the bond angles. The calculated values of the frequencies of vibrations of the various clusters have been compared with those obtained from the experimental Raman spectra of actual glasses, Ge_xSe_1?x(0 < x < 0.3). The local concentration, x within 0.25 nm is nonuniform in the amorphous material. When the same cluster occurs in two stable configurations, low frequency vibrations of frequency, ν < 100 cm^?1, are found. The corner sharing GeSe₄ has low frequency modes at 54 cm^?1 and 93 cm^?1 whereas these modes disappear in the pyramidal configuration. The low frequency modes are therefore associated with the breaking of C₄ symmetry of the pyramidal configuration. The computed vibrational frequencies of clusters Ge₃, Ge₄Se₃, Ge₂Se₃, GeSe₃ and Ge₃Se₂ are actually present in the Raman spectra of the glass, Ge_xSe_1?x(0 < x < 0.3).