共查询到11条相似文献,搜索用时 0 毫秒
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The absorption coefficient of quantum dot arrays in conditions of dynamic Stark effect is calculated. It is shown that when ω1 > ω0 a red shift of the energy of optical transitions takes place. 相似文献
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利用等离子体增强化学气相沉积技术制备了a-Si ∶H/SiO2多量子阱结构材料.对a-Si ∶H/SiO2多量子阱样品分别进行了3种不同的热处理,其中样品经1100 ℃高温退火可获得尺寸可控的nc-Si:H/SiO2量子点超晶格结构,其尺寸与非晶硅子层厚度相当.比较了a-Si ∶H/SiO2多量子阱材料与相同制备工艺条件下a-Si ∶H材料的吸收系数,在紫外/可见短波段前者的吸收系数明显增大,光学吸收边蓝移,说明该材料
关键词:
多量子阱
量子限制效应
光学吸收
能带结构 相似文献
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Qing‐Hu Zhong Rui‐Qiang Wang Liang‐Bin Hu Yu‐Zhen Yan Shou‐Liang Bu Xue‐Hua Yi 《Journal of Raman spectroscopy : JRS》2013,44(5):752-757
We have presented a theoretical calculation of the differential cross section for the electron Raman scattering process associated with the interface optical phonon modes in cylindrical GaAs quantum dots (QDs) with a AlAs matrix. We consider the Fröhlich electron–phonon interaction in the framework of the dielectric continuum approach. The selection rules for the processes are studied. Singularities are found to be sensitively size‐dependent, and, by varying the size of the QDs, it is possible to control the frequency shift in the Raman spectra. A discussion of the phonon behavior for QDs with different size is presented. Copyright © 2013 John Wiley & Sons, Ltd. 相似文献
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Andrea Scaccabarozzi Silvia Adorno Sergio Bietti Maurizio Acciarri Stefano Sanguinetti 《固体物理学:研究快报》2013,7(3):173-176
We report the fabrication procedure and the characterization of an Al0.3Ga0.7As solar cell containing high‐density GaAs strain‐free quantum dots grown by droplet epitaxy. The production of photocurrent when two sub‐bandgap energy photons are absorbed simultaneously is demonstrated. The high quality of the quantum dot/barrier pair, allowed by the high quality of nanostructured strain‐free materials, opens new opportunities for quantum dot based solar cells.
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Yingtao Hu Marianna Pantouvaki Joris Van Campenhout Steven Brems Inge Asselberghs Cedric Huyghebaert Philippe Absil Dries Van Thourhout 《Laser \u0026amp; Photonics Reviews》2016,10(2):307-316
High performance integrated optical modulators are highly desired for future optical interconnects. The ultra‐high bandwidth and broadband operation potentially offered by graphene based electro‐absorption modulators has attracted a lot of attention in the photonics community recently. In this work, we theoretically evaluate the true potential of such modulators and illustrate this with experimental results for a silicon integrated graphene optical electro‐absorption modulator capable of broadband 10 Gb/s modulation speed. The measured results agree very well with theoretical predictions. A low insertion loss of 3.8 dB at 1580 nm and a low drive voltage of 2.5 V combined with broadband and athermal operation were obtained for a 50 μm‐length hybrid graphene‐Si device. The peak modulation efficiency of the device is 1.5 dB/V. This robust device is challenging best‐in‐class Si (Ge) modulators for future chip‐level optical interconnects. 相似文献
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C. Kindel G. Callsen S. Kako T. Kawano H. Oishi G. Hönig A. Schliwa A. Hoffmann Y. Arakawa 《固体物理学:研究快报》2014,8(5):408-413
We present a study about the origin of the huge emission linewidths broadening commonly observed for wurtzite GaN/AlN quantum dots. Our analysis is based on a statistically significant number of quantum dot spectra measured by an automatized µ‐photoluminescence mapping system applying image recognition techniques. A clear decrease of the single quantum dot emission linewidths is observed with rising overall exciton emission energy. 8‐band k · p based model calculations predict a corresponding decrease of the built‐in exciton dipole moments with increasing emission energy in agreement with the measured behavior for the emission linewidths. Based on this proportionality we explain the particular susceptibility of nitride quantum dots to spectral diffusion causing the linewidth broadening via the linear quantum‐confined Stark effect. This is the first statistical analysis of emission linewidths that identifies the giant excitonic dipole moments as their origin and estimates the native defect‐induced electric field strength to ~2 MV/m. Our observation is in contrast to less‐polar quantum dot systems as e.g. arsenides that exhibit a naturally lower vulnerability to emission linewidth broadening due to almost negligible exciton dipole moments. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
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Ying Sun Xiao‐Ting Liu Jing‐Fu Guo Ai‐Min Ren Dan Wang 《Journal of Physical Organic Chemistry》2013,26(10):822-833
Two‐photon fluorescent probe materials are significant for achieving observation of living phenomena in entire organs and tissues. To explore new materials with high fluorescence and large two‐photon absorption (TPA) cross section, a series of 2,3,5‐trisubstituted pyrazine derivatives were designed. Their equilibrium geometries, one‐photon absorption, TPA, and luminescence properties have been studied by using density functional theory (DFT), time‐dependent DFT, and Zerner's intermediate neglect of differential overlap program. The results show that the introduction of styrene groups to 2,3,5‐trisubstituted pyrazine derivatives can efficiently increase the conjugated effect and enhance the TPA activity. Moreover, the luminescence properties of 2,3,5‐trisubstituted pyrazine derivatives were compared, and the effect of three substituents on the fluorescence of trisubstituted pyrazine derivatives was analyzed by means of different contribution of the basis functions localized on pyrazine fragment into the highest occupied molecular orbital and lowest unoccupied molecular orbital. The oscillator strengths in the excited state (?em) for the pyrazine derivatives substituted by styryl are larger than that of other derivatives with acetylamino and indole groups substituted at 2‐site and 5‐site of the pyrazine core, and the ?em of 3‐indolyl pyrazine derivatives is larger than that of 3‐styrene pyrazine derivatives. It suggests that the styrene group has a great influence on the luminescence property. In addition, the indole group substituted at 3‐site of the pyrazine derivatives can also promote the fluorescence property. Copyright © 2013 John Wiley & Sons, Ltd. 相似文献
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The optical properties of several azobenzene derivatives were modulated by varying the dipole moments and conjugation lengths of the D‐π‐A systems. The relationship between the structure and absorption spectrum and polarizability was studied in the gas phase, THF and MeOH solutions, respectively, by using the density functional theory. The calculated absorption spectra and second‐order polarizabilities are in good agreement with the available experimental observations. In comparison with the D‐π‐A monomer, the H‐shaped D‐π‐A dimer almost doubles the dipole moments and hence increases the second‐order polarizabilities, without a significant shift in the maximum absorption bands. The addition of another azobenzol group between electron‐donating and ‐accepting groups increases the second‐order polarizabilities by 4–6 times, but leads to an evident red‐shift of about 65–80 nm in spectra. The relative second‐order polarizability of the halogen‐substituted derivatives is in the sequence of ? CF3 > ? F > ? Cl > ? Br, without obvious substituent effects on the optical transparency. The D‐π‐A chromophores with the strong electron‐donating (amino) and ‐accepting (acetyl) substituent present the larger second‐order polarizabilities, at the cost of about 20 nm red‐shift of the maximum absorption lengths relative to the halogen‐substituted species. It is also demonstrated that both the linear and nonlinear optical properties augment with the increase in solvent polarity, accompanied by a red‐shift in the wavelengths of maximum absorption by about 18 and 23 nm, respectively, in THF and MeOH solutions. The changes in optical properties upon the structural modifications are further rationalized by the electronic structures of various H‐shaped dimers. Copyright © 2010 John Wiley & Sons, Ltd. 相似文献
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E. S. Freitas Neto A. C. A. Silva S. W. da Silva P. C. Morais J. A. Gmez O. Baffa N. O. Dantas 《Journal of Raman spectroscopy : JRS》2013,44(7):1022-1032
Glass‐embedded Cd1−xCoxS quantum dots (QDs) with mean radius of R ≈ 1.70 nm were successfully synthesized by a novel protocol on the basis of the melting‐nucleation synthesis route and herein investigated by several experimental techniques. Incorporation of Co2+ ions into the QD lattice was evidenced by X‐ray diffraction and magnetic force microscopy results. Optical absorption features with irregular spacing in the ligand field region confirmed that the majority of the incorporated Co2+ ions are under influence of a low‐symmetry crystal field located near to the Cd1−xCoxS QD surface. Electron paramagnetic resonance data confirmed the presence of Co2+ ions in a highly inhomogeneous crystal field environment identified at the interface between the hosting glass matrix (amorphous) and the crystalline QD. The acoustic‐optical phonon coupling in the Cd1−xCoxS QDs (x ≠ 0.000) was directly observed by Raman measurements, which have shown a high‐frequency shoulder of the longitudinal optical phonon peak. This effect is tuned by the size‐dependent sp‐d exchange interaction due to the magnetic doping, causing variations in the coupling between electrons and longitudinal optical phonon. Copyright © 2013 John Wiley & Sons, Ltd. 相似文献