Synthesis,Ferroelectric and Optical Properties of (Pb,Ca)TiO3 Thin Films by Soft Solution Processing

Calcium modified lead titanate sol was synthesized using a soft solution processing, the so-called polymeric precursor method. In soft chemistry method, soluble precursors such as lead acetate trihydrate, calcium carbonate and titanium isopropoxide, as starting materials, were mixed in aqueous solution. Pb_0.7Ca_0.3TiO₃ thin films were deposited on platinum-coated silicon and quartz substrates by means of the spinning technique. The surface morphology and crystal structure, dielectric and optical properties of the thin films were investigated. The electrical measurements were conducted on metal-ferroelectric-metal (MFM) capacitors. The typical measured small signal dielectric constant and dissipation factor at a frequency of 100 kHz were 299 and 0.065, respectively, for a thin film with 230 nm thickness annealed at 600°C for 2 h. The remanent polarization (2P_r) and coercive field (E _c) were 32 C/cm² and 100 kV/cm, respectively. Transmission spectra were recorded and from them, refractive index, extinction coefficient, and band gap energy were calculated. Thin films exhibited good optical transmissivity, and had optical direct transitions. The present study confirms the validity of the DiDomenico model for the interband transition, with a single electronic oscillator at 6.858 eV. The optical dispersion behavior of PCT thin film was found to fit well the Sellmeir dispersion equation. The band gap energy of the thin film, annealed at 600°C, was 3.56 eV. The results confirmed that soft solution processing provides an inexpensive and environmentally friendly route for the preparation of PCT thin films.     

Structural and optical properties of ZnO thin films by the spin coating Sol-Gel method

ZnO thin films were deposited onto glass subsrates by a Sol-gel spin coating method. The structural and optical properties of ZnO thin films were investigated. The molar ratios of the zinc acetate dihydrate to Monoethanolamine were maintained 1:1. The as-grown film was sintered 250 °C for 10 min, then annealed in air at 500 °C for 30 min. The XRD results indicate that ZnO films were strongly oriented to the c-axis of the hexagonal nature. Absorption measurements were carried out as a function of temperature with 10 K steps in the range 10–320 K. The band gap energy was measured 3.275 and 3.267 eV for 0.5 and 1.0 molarity (M) ZnO thin films at 300 K. The steepness parameters were observed between 10 and 320 K and their extrapolations converged at (E₀, α₀) = 3.65 eV, 172,819 cm⁻¹ and 3.70 eV, 653,436 cm⁻¹ for 0.5 and 1.0 M ZnO thin films, respectively.     

Preparation and characterization of nanorods Sb doped CdO films by sol–gel technique

Pure and antimony (Sb) doped CdO films were grown using sol–gel spin coating technique. The structural properties of the films were investigated using atomic force microscopy. The structure of CdO film is converted from microrods to nanorods with Sb dopant. The analysis of optical absorption revealed that optical bandgap of the films changes with doping. The optical bandgap for 0.1, 0.5, 1.0, and 2.0% Sb doped CdO was determined to be 2.28, 2.30, 2.56, and 2.42 eV, respectively. Other optical constants such as refractive index, extinction coefficient, and dielectric constants were calculated using the optical data. The refractive index dispersion of the films obeys the single oscillator model. The volume and surface energy loss functions were calculated and observed to increase with increase in the photon energy.     

Effect of γ-irradiation exposure on optical properties of chalcogenide glasses Se70S30−xSbx thin films

We investigate in the present paper the effect of the γ-irradiation exposure by 100–500 kGy doses on the optical properties and single oscillator parameters for chalcogenide glasses Se₇₀S_30?xSb_x (x=0, 12, 18 and 30 at%) thin films. These parameters were modeled from transmission spectra data measured by spectrophotometry in the wavelength range 200–2500 nm. It was found that the refractive index of the investigated films increases with increasing the doses of γ-radiation. This post-irradiation increase in the refractive index was interpreted in terms of the increase of the density of the investigated films with irradiation due to ionization or atomic displacements. Besides, the refractive index dispersions data of both the as-deposited and γ-irradiated Se₇₀S_30?xSb_x films obeyed the single oscillator model. The calculated single oscillator parameters; oscillator strength E_d, static refractive index n_o, zero frequency dielectric constant ε_o increased after irradiation while the oscillator energy E_o, reduced after irradiation. The absorption coefficient was found to increase with the increase of the doses of γ-radiation. Furthermore, the obtained optical energy gap of chalcogenide glasses Se₇₀S_30?xSb_x films was found to decrease with increasing the doses of γ-radiation which is attributed to increase of the defects after irradiation. This is confirmed by the decrease in the Urbach energy E_e after radiation. The γ-irradiation stimulated increase in the absorption coefficient and change in the optical parameters which can be utilized for industrial dosimetric purposes.     

Study of optical properties of highly oriented nanocrystalline V2O5·nH2O films doped with K ions

Optical transmission and reflection measurements of highly oriented nanocrystalline K_xV₂O₅·nH₂O films (0 ≤ x < 0.01) were studied. The optical constants such as, refractive index, the extinction coefficient, absorption coefficient, optical band gap have been calculated. The optical spectra of all samples exhibited two distinct regions of optical gap, E_op1 suggesting a direct allowed transition with optical gap ranging from 0.37 up to 0.42 eV and E_op2 suggesting a direct forbidden transition with optical gap ranging from 2.02 up to 2.23 eV. This indicates that K_xV₂O₅·nH₂O films have more than one type of conduction mechanism.     

Single oscillator model and refractive index dispersion properties of ternary ZnO films by sol gel method

The optical constants of the NiMnZnO thin films prepared by spin-coating method were determined using transmittance and reflectance spectra. The optical band gap of the NiMnZnO thin films was found to be in the range of 3.20–3.35 eV. The refractive index dispersion of the NiMnZnO films obeys the single oscillator model. The dispersion energy and oscillator energy values of the NiMnZnO films were found to be in the range of 6.46–9.85 and 4.82–5.54 eV, respectively. The real and imaginary parts of the dielectric constants of the NiMnZnO films were determined. The reflectance spectra of the NiMnZnO films give a peak and the presence of this peak is due to the photoexcitation process, in which, the electrons are excited from valence band to the conduction band. The obtained results suggest that the optical constants and refractive dispersion energy parameters of the films are controlled by the molar ratios of NiMnZnO films.     

Physical properties of suspension ZnO nanoparticles prepared by wet chemical method: Comparison study

In this work a suspension of Nano-crystalline of ZnO particle is prepared by wet chemical at different temperature and concentration. From FTIR spectral exhibit present of Zn–O bond which indicate to formation ZnO particles. While all suspension and nano films exhibit a high transmittance in visible region about 90% which falls sharply in the UV region. The particle size is measured by using effective mass approximation (EMA), which was approximation (1.7–1.96 nm), and the band gap changes from 3.95 to 4.52eV for nanoparticles in suspension, and change from 3.76 to 3.94 eV for nanoparticles in ZnO film, which is change as function of concentration, temperature and aging time. Hall Effect measurements for ZnO films exhibit n-type conductivity for films deposited with activation energy 0.742eV at high temperature and 0.178eV at low temperature which is different as prepared sample conditions. Also the nanoparticle suspension and nanoparticle film could be implemented as a filter with variable cut off (8.9 × 10¹⁴–1.28 × 10¹⁵) H_Z.     

Characteristics of SnO2 thin films prepared by SILAR

SnO₂ thin films were deposited on glass substrates by using Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature. The film thickness effect on characteristic parameters such as structural, morphological, optical and electrical properties of the films was studied. Also, the films were annealed in oxygen atmosphere (400 °C, 30 min) and characteristic parameters of the films were investigated. The X-ray Diffraction (XRD) and Scanning Electron Microscopy (SEM) studies showed that all the films exhibited polycrystalline nature with tetragonal structure and were covered well on glass substrates. After the investigation of the crystalline and surface properties of the films, it was found that they were improving with increasing film thickness. Optical band gap decreased from 3.90 eV to 3.54 eV and electrical conductivity changed between 0.015–0.815 (Ω-cm)⁻¹ as the film thickness increased from 215 to 490 nm. The refractive index (n), optical static and high frequency dielectric constants (ɛ_o, ɛ_∞) values were calculated by using the optical band gap values as a function of the film thickness.     

Optical constants of electrochemically synthesized polyindole and poly(5-carboxilic acid indole)

The optical properties and optical constants of the polyindole and poly(5-carboxilic acid indole) conductive polymers synthesized and doped electrochemically with ClO ₄ ^? in acetonitrile solution were investigated by means of transmittance and reflectance spectra, in the wavelength range of 300–800 nm. Absorption band centered at 425 nm assigned to the direct allowed electron transition (π → π*) from valence band to the conduction band. The optical band gap, E _g , was determined out of the optical absorption spectra. The E _g increases from 2.17 eV for polyindole film to 2.40 eV for poly(5-carboxilic acid indole) polymer thin film, which is attributed to the effect of electron withdrawing carboxylic acid functional group on the growth of chain length of the polymer during the electropolymerization. The oscillator energy E ₀, dispersion energy E _d and other parameters were determined by the Wemple-DiDomenico method.     

Electrical-optical properties of nanofiber ZnO film grown by sol gel method and fabrication of ZnO/p-Si heterojunction

Electrical and optical properties of the ZnO film prepared by sol-gel dip coating were investigated and ZnO film was deposited onto p-type silicon to obtain Ag/ZnO/p-Si heterojunction diode. Two dimensional atomic force microscopy images indicate that the ZnO film is formed from the fibers consisted from nanoparticles with grain size of 250-350 nm. The electrical conductivity mechanism of the ZnO film was varied from extrinsic to intrinsic conductivity. The calculated optical band gap of the ZnO film was found to be 3.22 eV. The Ag/ZnO/p-Si diode exhibit a non-linear behavior with ideality factor of n = 4.17 and barrier height of ?_B = 0.79 eV. The electrical properties of the Ag/ZnO/p-Si diode were investigated by current-voltage, capacitance-voltage-frequency and conductance-voltage-frequency measurements.     

Synthesis and optical properties of poly (vinyl acetate)/bismuth oxide nanorods

Poly (vinyl acetate) (PVAc) loaded bismuth oxide (Bi₂O₃) nanorods were successfully prepared at ambient pressure. X‐ray diffraction (XRD) and transmission electron microscopy were used to characterize the final product. It was found that Bi₂O₃ nanorods were formed and the diameter of the rods was confined to about 8 nm. The diameter and length of formed rods were found to increase by increasing the bismuth oxide concentration in the PVAc matrix. The optical properties of the nanocomposite films were characterized from the analysis of the experimentally recorded transmittance and reflectance data in the spectral wavelength range of 300–800 nm. The values of some important parameters of the studied films are determined such as refractive index (n), extinction coefficient (k), optical absorption coefficient (α), and band energy gap (E_g). According to the analysis of dispersion curves, it has been found that the dispersion data obeyed the single oscillator of the Wemple–DiDomenico model, from which the dispersion parameters and high‐frequency dielectric constant were determined. In such work, from the transmission spectra, the dielectric constant (ε_∞) and the third‐order optical nonlinear susceptibility χ⁽³⁾ were determined. Copyright © 2010 John Wiley & Sons, Ltd.     

Temperature dependence of optical and structural properties of ferroelectric B3.15Nd0.85Ti3O12 thin film derived by sol–gel process

We report the annealing temperature dependence of optical properties in ferroelectric B_3.15Nd_0.85Ti₃O₁₂ (BNdT) thin film for the first time. BNdT thin films are prepared by a sol–gel/spin coating method. Structural properties of BNdT thin films upon different thickness and annealing temperatures are characterized using the X-ray diffraction, scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. The BNdT thin film annealed at 650 °C exhibits a well defined perovskite crystalline structure with high c-axis orientation, which leads to a saturated polarization–electric field (PE) hysteresis with a remanent polarization of 2P _r = 39.6 μC/cm² and coercive field of 85 kV/cm at 5 V. Little fatigue degradation (<5%) is demonstrated upon 1 × 10¹⁰ switching cycles indicating a good fatigue endurance. Additionally, a superior optical transparency T(λ) of >80% is observed for wavelengths from 250 to 2,000 nm. Fundamental optical parameters of BNdT material such as refractive index n, extinction coefficient k, and band gap energy E _g are extracted from an ellipsometry measurement. Microstructure and annealing temperature dependence of T(λ), n, k, and E _g variation are also investigated and explained in detail.     

Magnetic,optical and electrical properties of Mn-doped CuCrO<Subscript>2</Subscript> thin films prepared by chemical solution deposition method

CuCrO₂ and CuCrO₂:Mn thin films were prepared on sapphire substrates by chemical solution deposition method. The effects of the annealing temperatures and Mn concentration on the structural, electrical and optical properties were investigated. The X-ray diffraction measurement was used to confirm the c-axis orientation of CuCrO₂ and CuCrO₂:Mn thin films. The maximum transmittances of the films in the visible region are about 65% with direct band gaps of 3.25 eV. All films showed the p-type conduction and semiconductor behavior. The electrical conductivity decreases rapidly with the increase of Mn content, the maximum of the electrical conductivity of 1.35 × 10⁻² S cm⁻¹ is CuCrO₂ film deposited at 600 °C temperature in 10⁻³ Torr vacuum, which is about four orders of magnitude higher than that of the Mn-doped CuCrO₂ thin film. The energy band of the samples is constructed based on the grain-boundary scattering in order to investigate the conduction mechanism. Moreover, the samples exhibit a clear ferromagnetism, which was likely ascribed to originating from the double-exchange interaction between the Mn³⁺ and Cr³⁺ ions.     

Structural,morphological, optical and dielectric properties of M3+/PVA/PEG SPE Films (M = La,Y, Fe or Ir)

Low band gap polymer complexes are promising due to its flexibility, and exhibiting electronic and optical properties of inorganic semiconductors. The effect of PEG on the physical properties of PVA was evaluated. Then, blend (PVA: PEG = 50:50) doped with rare earth (La or Y) and transition metal (Fe or Ir) chlorides to obtain solid polymer electrolyte films. XRD shows that adding PEG to PVA results in a new peak, 2θ = 23^o with increased intensity as PEG ratio increases. However, doping with La³⁺, Fe³⁺ or Ir³⁺ eliminate this peak and decrease the crystallinity. SEM exhibits significant changes in the morphology of films. FTIR confirms miscibility between PVA & PEG and the complexation of the salts. The optical band gap (E_g) of PVA ~ 5.37 eV, decreased slightly by blending with PEG. While it decreased significantly to 2.64 eV and 2.78 eV after doping with Fe³⁺ or Ir³⁺. There are a consistency between E_g values obtained by Tauc's model and that obtained from the optical dielectric loss. The dielectric constant and loss, in temperature range 303–405 K & frequency range 1.0 kHz ‐ 5.0 MHz, indicate one or two relaxation peak(s) depending on the film composition. Accordingly, conduction mechanism varied between correlated barrier hopping and large polaron tunneling. The DC conductivity was strongly depend on the dielectric loss. The transition metal salts appear to be more effective than the rare earth ones in increasing σ_ac of films to higher values that candidates them in semiconductors industry.     

Influence of substrate temperature on the structural and optical properties of crystalline ZnO films obtained by pulsed spray pyrolysis

In this work, we report on the structural and optical properties of ZnO films deposited by pulsed spray pyrolysis at relatively low temperatures, compatible with a large variety of substrates and processing technologies. Crystalline ZnO films were deposited onto glass substrates using zinc acetate dihydrate dissolved in distilled water with concentration of 0.2 M. The temperature of the substrate was varied in the range T_s = 473–673 K with ΔТ = 50 K. Effect of T_s were investigated by scanning electron microscopy, x‐ray diffraction and energy dispersive x‐ray, and optical spectroscopies. Also, the influence of T_s on the grain size, phase composition, texture quality, coherent scattering domain size, crystal lattice parameters, chemical composition, transmission coefficient, and the bang gap of the ZnO films were studied. X‐ray diffraction analysis revealed that films were polycrystalline with hexagonal phase and showed as preferential orientation (101) at T_s < 573 K and (100) and (002) at T_s > 573 K. Scanning electron microscopy (SEM) measurements showed that the substrate temperature has a strong effect on morphology of the films. Energy dispersive analysis revealed that ZnO films consisted of the non‐stoichiometric compounds. Optical measurements showed ZnO films to be highly transparent in the visible region, and optical band gap is shifting from 3.18 eV to 3.30 eV. Copyright © 2015 John Wiley & Sons, Ltd.     

Microwave assisted novel MoBi2S5 nanoflowers: Synthesis,characterization, photoelectrochemical performance

In the present article, we have studied the effect of post annealing treatment on microstructural, optical and photoelectrochemical (PEC) properties of MoBi₂S₅ thin films synthesized by microwave assisted technique. The synthesized thin films are vacuum annealed for 4 h at 473 K temperature. The X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), scanning electron microscopy (SEM) and UV–Vis–NIR spectrophotometer techniques were used for characterization of the as deposited and annealed MoBi₂S₅ thin films. The XRD patterns confirm the synthesized and annealed thin films have nanocrystalline nature with rhombohedral-orthorhombic crystal structure. SEM micrographs indicate that, nanoflowers exhibit sharper end after annealing. The optical absorption study illustrates that the optical band gap energy has been decrease from 2.0 eV to 1.75 eV with annealing. Finally, applicability of synthesized thin films has been checked for PEC property. The J-V curves revealed that synthesized thin film photoanodes are suitable for PEC cell application. As well, used simple, economical method has great potential for synthesis of various thin film materials.     

Thickness dependent physical properties of close space evaporated In2S3 films

In recent years, In₂S₃ is considered as a promising buffer layer in the fabrication of heterojunction solar cells. Film thickness is one of the important parameters that alters the physical characteristics of the grown layers significantly. The effect of film thickness on the structural, morphological, optical and electrical properties of close space evaporated In₂S₃ layers has been studied. In₂S₃ thin films with different thicknesses in the range, 100–700 nm were deposited on Corning glass substrates at a constant substrate temperature of 300 °C. The films were polycrystalline exhibiting strong crystallographic orientation along the (103) plane. The deposited films showed mixed phases of both cubic and tetragonal structures up to a thickness of 300 nm. On further increasing the film thickness, the layers showed only tetragonal phase. With increase of film thickness, both the crystallite size and surface roughness in the films were found to be increased. The optical constants such as refractive index and extinction coefficient of the as-grown layers have been calculated from the optical transmittance data in the wavelength range, 300–2500 nm. The optical transmittance of the films was decreased from 82% to 64% and the band gap varied in the range, 2.65–2.31 eV with increase of film thickness. The electrical resistivity as well as the activation energy was evaluated and found to decrease with film thickness. The detailed study of these results was presented and discussed.     

Determination of optical constants of sol‐gel derived Zn0.9Mg0.1O films by spectroscopic ellipsometry with various models

The Zn_0.9Mg_0.1O thin films were prepared on Si (100) substrates by the sol‐gel method. The structural and the optical properties of Zn_0.9Mg_0.1O thin films, submitted to an annealing treatment in the 400–700 °C ranges, are studied by X‐ray diffraction (XRD) and ultraviolet (UV)‐visible spectroscopic ellipsometry (SE). The thickness, refractive index, and extinction coefficient of these films have been determined by analyzing the SE spectra using parameterized dispersion model. Moreover, we made a detailed comparison among various dispersion models and found that the Sellmeier model was superior to others in fitting the ellipsometric spectra in the transparent region. In the interband transition region, point‐by‐point fit was used. The spectral dependence of the refractive index and extinction coefficient was obtained in the photon energy range of 1.5–4.71 eV. The influence of annealing temperature on the refractive index, the extinction coefficient, and the optical bandgap energy was also discussed. We found that the refractive index and the extinction coefficient increase with increasing the annealing temperature, meaning the optical quality of Zn_0.9Mg_0.1O films is improved by annealing. Copyright © 2009 John Wiley & Sons, Ltd.     

Enhanced β‐phase in PVDF polymer nanocomposite and its application for nanogenerator

Harvesting energy from the ambient mechanical energy by using flexible piezoelectric nanogenerator is a revolutionary step toward achieving reliable and green energy source. Polyvinylidene fluoride (PVDF), a flexible polymer, can be a potential candidate for the nanogenerator if its piezoelectric property can be enhanced. In the present work, we have shown that the polar crystalline β‐phase of PVDF, which is responsible for the piezoelectric property, can be enhanced from 48.2% to 76.1% just by adding ZnO nanorods into the PVDF matrix without any mechanical or electrical treatment. A systematic investigation of PVDF‐ZnO nanocomposite films by using X‐ray diffractometer, Fourier transform infrared spectroscopy, and polarization‐electric field loop measurements supports the enhancement of β‐phase in the flexible nanocomposite polymer films. The piezoelectric constant (d₃₃) of the PVDF‐ZnO (15 wt%) film is found to be maximum of approximately −1.17 pC/N. Nanogenerators have been fabricated by using these nanocomposite films, and the piezoresponse of PVDF is found to enhance after ZnO loading. A maximum open‐circuit voltage ~1.81 V and short‐circuit current of 0.57 μA are obtained for 15 wt% ZnO‐loaded PVDF nanocomposite film. The maximum instantaneous output power density is obtained as 0.21 μW/cm² with the load resistance of 7 MΩ, which makes it feasible for the use of energy harvesting that can be integrated to use for driving small‐scale electronic devices. This enhanced piezoresponse of the PVDF‐ZnO nanocomposite film‐based nanogenerators attributed to the enhancement of electroactive β‐phase and enhanced d₃₃ value in PVDF with the addition of ZnO nanorods.     

Improved optical and electrical properties of sol–gel-derived boron-doped zinc oxide thin films

Sol–gel spin-coating was used to grow zinc oxide (ZnO) thin films doped with 0–2.5 at.% B on quartz substrates. The structural, optical, and electrical properties of the thin films were investigated using field-emission scanning electron microscopy, X-ray diffraction (XRD), photoluminescence (PL), ultraviolet–visible spectroscopy, and van der Pauw Hall-effect measurements. All the thin films had deposited well onto the quartz substrates and exhibited granular morphology. The average crystallite size, lattice constants, residual stress, and lengths of the bonds in the crystal lattice of the thin films were calculated from the XRD data. The PL spectra showed near-band-edge (NBE) and deep-level emissions, and B doping varied the PL properties and increased the efficiency of the NBE emission. The optical transmittance spectra for the undoped ZnO and boron-doped zinc oxide (BZO) thin films show that the optical transmittance of the BZO thin films was significantly higher than that of the undoped ZnO thin films in the visible region of the spectra and that the absorption edge of the BZO thin films was blue-shifted. In addition, doping the ZnO thin films with B significantly varied the absorption coefficient, optical band gap, Urbach energy, refractive index, extinction coefficient, single-oscillator energy, dispersion energy, average oscillator strength, average oscillator wavelength, dielectric constant, and optical conductivity of the BZO thin films. The Hall-effect data suggested that B doping also improved the electrical properties such as the carrier concentration, mobility, and resistivity of the thin films.