Phase coherence of an atomic Mott insulator

We investigate the phase coherence properties of ultracold Bose gases in optical lattices, with special emphasis on the Mott insulating phase. We show that phase coherence on short length scales persists even deep in the insulating phase, preserving a finite visibility of the interference pattern observed after free expansion. This behavior can be attributed to a coherent admixture of particle-hole pairs to the perfect Mott state for small but finite tunneling. In addition, small but reproducible kinks are seen in the visibility, in a broad range of atom numbers. We interpret them as signatures for density redistribution in the shell structure of the trapped Mott insulator.     

Effect of Mn-doping on the electrical properties of Cu2GeSe3

In this work we report the temperature dependence of the resistivity ρ of p-Cu₂GeSe₃ and manganese-doped p-Cu₂GeSe₃ at low temperature. It was found that for a intrinsic sample ρ obeys the Shklovskii-Efros-type variable-range hopping resistivity law in the temperature range from 4 to 63 K. This behaviour is governed by generation of a Coulomb gap Δ=78 meV in the density of localized states. We find a low activation term T₀=0.24 K, which is an indication of a large localization length ξ. For Mn-doped sample a metal-insulator transition (MIT) is observed at T=65 K. On the basis of the Mott criterion for metal-insulator transition, the critical carrier density n_c is determined. From the analysis of resistivity data it is concluded that Mn acts as acceptor impurity.     

The zero-distribution of the great partition function in the complex fugacity plane of gases of point particles with logarithmic interaction

The equation of state for gases of point particles with logarithmic interaction is derived. The system exhibits a phase transition at a critical temperature T_c. The critical temperature is a function of the dimension of the system. A hard core must be added below T_c to prevent the system from collapsing. The specific heat diverges on both sides as |T_c - T|^-2 in any dimension.For T≤T_c there are no zeros of the grand partition function in the complex fugacity plane, for T >T_c all zeros occupy the whole negative real axis. The density of zeros will be calculated.     

Modification of the CVD-graphene resistivity by post-processing sample annealing

In this paper, we present the results of an additional annealing effect on the temperature dependences of the resistivity for CVD-graphene samples of a large area. We found that an annealing in a Ar/H₂ mixture at different temperatures modifies both the value of the resistivity and the slope of its temperature dependence. The annealing effect on the resultant sample quality depends on the type of the ρ(T) dependence for the initial sample. For samples with a metallic-like ρ(T) dependence, a low-temperature annealing (at T = 250 °C) results in a slight decrease in the resistivity value and an increase of the ρ(T) curve slope. Increasing the annealing temperature up to T = 400 °C leads to a stronger increase in the ρ(T) curve slope but to an increase in the resistivity value. For samples with a semiconductor-like ρ(T) dependence, increasing the annealing temperature up to T = 750 °C results in a gradual suppression of the activation character of the resistivity behavior at low temperatures. The additional annealing is concluded to be accompanied by two processes: a cleaning of the graphene surface from adsorbed contaminations and an additional defect formation in the graphene structure. A relative role of these processes in dependence on the annealing temperature and the type of the ρ(T) dependence for the initial sample is discussed.     

Collective excitations and the nature of Mott transition in undoped gapped graphene

The particle-hole continuum (PHC) for massive Dirac fermions provides an unprecedented opportunity for the formation of two collective split-off states, one in the singlet and the other in the triplet (spin-1) channel, when the short-range interactions are added to the undoped system. Both states are close in energy and are separated from the continuum of free particle-hole excitations by an energy scale of the order of the gap parameter Δ. They both disperse linearly with two different velocities, reminiscent of spin-charge separation in Luttinger liquids. When the strength of Hubbard interactions is stronger than a critical value, the velocity of singlet excitation, which we interpret as a charge composite boson, becomes zero and renders the system a Mott insulator. Beyond this critical point the low-energy sector is left with a linearly dispersing triplet mode-a characteristic of a Mott insulator. The velocity of the triplet mode at the Mott criticality is twice the velocity of the underlying Dirac fermions. The phase transition line in the space of U and Δ is in qualitative agreement with our previous dynamical mean field theory calculations.     

Superconductivity close to the Mott state: From condensed-matter systems to superfluidity in optical lattices

Since the discovery of high-temperature superconductivity in 1986 by Bednorz and Müller, great efforts have been devoted to finding out how and why it works. From the d-wave symmetry of the order parameter, the importance of antiferromagnetic fluctuations, and the presence of a mysterious pseudogap phase close to the Mott state, one can conclude that high-T_c superconductors are clearly distinguishable from the well-understood BCS superconductors. The d-wave superconducting state can be understood through a Gutzwiller-type projected BCS wavefunction. In this review article, we revisit the Hubbard model at half-filling and focus on the emergence of exotic superconductivity with d-wave symmetry in the vicinity of the Mott state, starting from ladder systems and then studying the dimensional crossovers to higher dimensions. This allows to confirm that short-range antiferromagnetic fluctuations can mediate superconductivity with d-wave symmetry. Ladders are also nice prototype systems allowing to demonstrate the truncation of the Fermi surface and the emergence of a Resonating Valence Bond (RVB) state with preformed pairs in the vicinity of the Mott state. In two dimensions, a similar scenario emerges from renormalization group arguments. We also discuss theoretical predictions for the d-wave superconducting phase as well as the pseudogap phase, and address the crossover to the overdoped regime. Finally, cold atomic systems with tunable parameters also provide a complementary insight into this outstanding problem.     

Electrical instability of LiCu<Subscript>2</Subscript>O<Subscript>2</Subscript> crystals

The temperature behavior of I-U curves and the field and temperature dependences of the electrical resistivity and dielectric permittivity of crystals of the LiCu₂O₂ phase have been studied. It was established that the crystals belong to p-type semiconductors and that their static resistivity in the range 80–260 K follows the Mott law ρ=Aexp(T₀/T)^1/4 describing variable-range hopping over localized states. At comparatively low electric fields, the crystals exhibit threshold switching and characteristic S-shaped I-U curves containing a region of negative differential resistivity. In the critical voltage region, jumps in the conductivity and dielectric permittivity are observed. Possible mechanisms of the disorder and electrical instability in these crystals are discussed.     

Searching for key parameter for determining Tc in Fe-based superconductors: Study of P/As substitution in RFe(P,As)(O,F) [R=La and Nd]

We have investigated the relation between the temperature-dependence of resistivity and superconducting transition temperature T_c in RFeP_1−xAs_xO_0.90F_0.10 (x=0-1.0) (R=La and Nd). In contrast to the linear change of the crystal structure with increasing x, the temperature dependence of resistivity and T_c show non-monotonous x-dependence. When the As concentration x is increased, the temperature-dependence of resistivity changes from T² to T-linear, and T_c distinctly increases in all the La compounds and the Nd ones with x<0.60. The results indicate that the substitution of As for P induces the spin fluctuation and resultantly enhances T_c. On the other hand, we could not find any relation between the temperature-dependence of resistivity and T_c in the Nd samples with x>0.60. This may suggest the existence of other parameters for determining T_c besides the antiferromagnetic correlation in this system.     

Doping effect on the carrier scattering in iron-pnictide superconductors studied by charge transport

In order to reveal the role of “carrier doping” in the iron-based superconductors, we investigated the transport properties of the oxygen-deficient iron-arsenides LnFeAsO_1−y (Ln=La, Ce, Pr and Nd) over a wide doping range. We found that the effect of “doping” in this system is mainly on the carrier scattering rather than carrier density, quite distinct from that in high-T_c cuprates. In the case of La system with lower T_c, the low temperature resistivity is dominated by T² term and fairly large magnetoresistance is observed. On the other hand, in the Nd system with higher T_c, carriers are subject to stronger scattering showing nearly T-linear resistivity and small magnetoresistance. Such strong scattering appears intimately correlated with high-T_c superconductivity in the iron-based system.     

The hopping variable range conduction in amorphous InAs thin films

This paper studies the influence of temperature on electrical resistivity in α-InAs thin films between 30 K-2K based on the analysis of Mott VRH model and ES VRH model. The effect of the interactions between electrons at lower temperature must be considered, therefore, ES VRH conduction will dominate mechanism, and the crossover from Mott to ES VRH conduction is observed about 7 K. Based on available experiment data and VRH conduction model, the parameters of VRH conduction are determined. And the calculated values of T_C are consistent with the experimental results. In addition, R_M/ξ, Δ_M/kT, R_ES/ξ and Δ_ES/kT are satisfied with the validity of Mott and ES models. Furthermore, the temperature dependence of resistivity at low temperature obeys a universal scaling law, which well describes the overall temperature range of VRH conduction. However, the values of T^’_M from the universal function are two order of magnitudes lower than T_M deduced from fitting experiment.     

Resistivity of thin gold films on mica induced by electron-surface scattering: Application of quantitative scanning tunneling microscopy

We report a comparison between the resistivity measured on thin gold films deposited on mica, with predictions based upon classical theories of size effects (Drude's, Sondheimer's and Calecki's), as well as predictions based upon quantum theories of electron-surface scattering (the modified theory of Sheng, Xing and Wang, the theory of Tesanovic, Jaric and Maekawa, and that of Trivedi and Aschroft). From topographic images of the surface recorded with a Scanning Tunneling Microscope, we determined the rms roughness amplitude, δ and the lateral correlation length, ξ corresponding to a Gaussian representation of the average height-height autocorrelation function, describing the roughness of each sample in the scale of length set by the Fermi wave length. Using (δ, ξ) as input data, we present a rigorous comparison between resistivity data and predictions based upon the theory of Calecki as well as quantum theoretical predictions without adjustable parameters. The resistivity was measured on gold films of different thickness evaporated onto mica substrates, between 4 K and 300 K. The resistivity data covers the range 0.1 < x(T) < 6.8, for 4 K < T < 300 K, where x(T) is the ratio between film thickness and electron mean free path in the bulk at temperature T. We experimentally identify electron-surface and electron-phonon scattering as the microscopic electron scattering mechanisms giving rise to the macroscopic resistivity. The different theories are all capable of estimating the thin film resistivity to an accuracy better than 10%; however the mean free path and the resistivity characterizing the bulk turn out to depend on film thickness. Surprisingly, only the Sondheimer theory and its quantum version, the modified theory of Sheng, Xing and Wang, predict and increase in resistivity induced by size effects that seems consistent with published galvanomagnetic phenomena also arising from electron-surface scattering measured at low temperatures.     

A Study on Hall Voltage and Electrical Resistivity of Doped Conducting Polyaniline

We report the electrical resistivity of HCl doped polyaniline in the temperature range 77 T 300 K. A maximum is obtained in the conductivity versus concentration of HCl curve at 3(N) HCl. The resistivity of the sample has been observed to show a decreasing trend with increase in temperature. The resistivity obeys the Mott variable range hopping theory. The Mott characteristic temperature (T _Mott) is very low in this sample compared to other studies. The Hall voltages have been found to be negative. The Hall coefficient, carrier concentration, and density of states have been determined from Hall measurement. From the conductivity versus temperature plot, different physical quantities such as localisation length and molecular vibrational frequency have been determined.     

Phase transitions in the atomic, electronic, and magnetic subsystems of LaSrMnO films versus the synthesis temperature

The evolution of the cluster structure in amorphous LaSrMnO films as synthesis temperature T _s increases from 20 to 300°C is considered. Two order-disorder phase transitions with different scale parameters are observed. One of them, the aggregation of disordered atoms into small (～20 Å) amorphous clusters at T _s = 100°C, shows up as a sharp increase in the intensity of diffuse X-ray scattering (diffuse halo 1) with a simultaneous suppression of incoherent (background) scattering. At T _s > 150°C, disordering dominates (I _incoh = I _max) until the next stage of ordering sets in at T _s = 250?300°C. At this stage, the crystalline phase forms from large (>100 Å) crystalline clusters. This amorphous-crystalline phase transition is characterized by the appearance of Debye lines and a reduction of the halo intensity. The structural phase transition to long-range order is accompanied by a decrease in the LaSrMnO resistivity from 10¹⁰ to 10 Ω cm and a change from the tunneling mechanism of conductivity involving metallic clusters (which is typical of granulated systems) to the hopping mechanism with a hop variable length following the Mott law ρ ～ exp(T ^?1/4). In the magnetic subsystem, the paramagnetic-ferromagnetic phase transition occurs.     

Preexponential factor in variable-range hopping conduction in CuInTe2

We study the temperature dependence of the electrical resistivity in a single crystal of p-type uncompensated CuInTe₂ on the insulating side of the metal-insulator transition down to 0.4 K. We observe a crossover from Mott to Efros-Shklovskii variable-range hopping conduction. In Efros-Shklovskii-type conduction, the resistivity is best described by explicitly including a preexponential temperature dependence according to the general expression ρ=ρ₀T^αexp(T_ES/T)^1/2, with α≠0. A theory based on the resistor network model was developed to derive an explicit relation between α and the decay of the wavefunction of the localized states. A consistent correspondence between the asymptotic extension of the wavefunction and the conduction regime is proposed. The results indicate a new mechanism for a local resistivity maximum in insulators, not involving magnetic effects.     

Energy-resolved spatial inhomogeneity of disordered Mott systems

We investigate the effects of weak to moderate disorder on the T=0 Mott metal-insulator transition in two dimensions. Our model calculations demonstrate that the electronic states close to the Fermi energy become more spatially homogeneous in the critical region. Remarkably, the higher energy states show the opposite behavior: they display enhanced spatial inhomogeneity precisely in the close vicinity to the Mott transition. We suggest that such energy-resolved disorder screening is a generic property of disordered Mott systems.     

Temperature dependence of the spectral weight in p- and n-type cuprates: A study of normal state partial gaps and electronic kinetic energy

The optical conductivity of CuO₂ (copper-oxygen) planes in p- and n-type cuprates thin films at various doping levels is deduced from highly accurate reflectivity data. The temperature dependence of the real part σ₁ (ω) of this optical conductivity and the corresponding spectral weight allow to track the opening of a partial gap in the normal state of n-type Pr_2−xCe_xCuO₄ (PCCO) but not of p-type Bi₂Sr₂CaCu₂O_8+δ (BSCCO) cuprates. This is a clear difference between these two families of cuprates, which we briefly discuss. In BSCCO, the change of the electronic kinetic energy E_kin—deduced from the spectral weight—at the superconducting transition is found to cross over from a conventional BCS behavior (increase of E_kin below T_c) to an unconventional behavior (decrease of E_kin below T_c) as the free carrier density decreases. This behavior appears to be linked to the energy scale over which spectral weight is lost and goes into the superfluid condensate, hence may be related to Mott physics.     

Electronic properties of iron arsenic high temperature superconductors revealed by angle resolved photoemission spectroscopy (ARPES)

We present an overview of the electronic properties of iron arsenic high temperature superconductors with emphasis on low energy band dispersion, Fermi surface and superconducting gap. ARPES data is compared with full-potential linearized plane wave (FLAPW) calculations. We focus on single layer NdFeAsO_0.9F_0.1 (R1111) and two layer Ba_1?xK_xFe₂As₂ (B122) compounds. We find general similarities between experimental data and calculations in terms of character of Fermi surface pockets, and overall band dispersion. We also find a number of differences in details of the shape and size of the Fermi surfaces as well as the exact energy location of the bands, which indicate that magnetic interaction and ordering significantly affects the electronic properties of these materials. The Fermi surface consists of several hole pockets centered at Γ and electron pockets located in zone corners. The size and shape of the Fermi surface changes significantly with doping. Emergence of a coherent peak below the critical temperature T_c and diminished spectral weight at the chemical potential above T_c closely resembles the spectral characteristics of the cuprates, however the nodeless superconducting gap clearly excludes the possibility of d-wave order parameter. Instead it points to s-wave or extended s-wave symmetry of the order parameter.     

Galvanomagnetic properties of La0.7Sr0.3Mn0.9Cu0.1O3

La_0.7Sr_0.3Mn_0.9Cu_0.1O₃ ceramic samples have been obtained by the conventional method of the solid-phase reaction, and their resistivity ρ has been investigated in a temperature range from 50 to 300 K in magnetic fields B = 0–20 T. Dependences are typical of perovskite manganites with a maximum at T _max = 140–150 K and an increase in ρ near T _max with increasing external magnetic field B. It has been established that the behavior of resistivity is caused by the variable range hopping conduction mechanism ρ(T) = ρ₀(T)exp[(T ₀/T)^1/4], where ρ₀(T) ～ T ^25/4. The Mott variable range hopping conduction has been observed below the Curie temperature for La_0.7Sr_0.3Mn_0.9Cu_0.1O₃ samples (T _C ～ 300 K) in a temperature range from 300 to 200 K. The influence of Cu doping on the properties of La_0.7Sr_0.3MnO₃ samples is apparently caused by an additional distortion introduced into the crystal lattice of the material and by a weakening of the double-exchange mechanism.     

The electrical resistivity of 241Am metal

The electrical resistivity of ²⁴¹Am metal was measured between 3.6 and 300 K using a layer of 1.89 μm and a bulk sample of 0.16 mm thickness. The analysis of the low temperature power law gave a T^2.8 dependence for the layer and a T^4.4 dependence for the bulk sample. At higher temperatures, deviations from a linear temperature dependence were found as in uranium and neptunium. The room temperature resistivity of 68.90 μΩcm, and some other physical and chemical properties of americium, are similar to those of the light lanthanide metals. The residual resistivity ratio of the bulk americium sample is 28. The experimental results can be explained by applying the s-d interband scattering model of Mott. Americium has to be considered the first lanthanide-like metal in the actinide series, with the 5<f; level lying more than about 5 eV below the Fermi energy.