Laser-induced free-carrier absorption in Si single crystal

The transmitted energy density in thin single Si crystal, wafers is measured at=1.06 m as a function of the incident energy density for a Nd laser pulse of 30 ns duration. Non-linear effects begin to become important at about 0.3 J/cm². The contribution due to free-carriers is separated from the interband one by using measurements made at low energy density and at different sample temperatures in the 20°–150 °C range. The time dependence of the free-carrier concentration and of the lattice temperature is computed for different values of the Auger constant. The experimental data in the 0.2–2.5 J/cm² energy density range are fitted with an Auger constant of 10^–30 cm⁶s^–1.Work supported in part by M.P.I. and G.N.S.M.-C.N.R.     

Photoconductivity of highly excited A IV B VI thin films

We report the results of picosecond photoconductivity measurements in photosensitive electrolytically deposited PbS and vacuum evaporated PbTe polycrystalline films. We determine Auger recombination to be the prevailing carrier recombination mechanism in highly excited PbTe and PbS films and found Auger coefficients _A5×10^–28 cm⁶ s^–1 for PbTe and _A5.3×10^–29 cm⁶ s^–1 for PbS for carrier concentration changes N>10¹⁸ cm^–3. The results indicate that the low mobility values are controlled by intergrain carrier scattering. We have studied the thermal annealing influence on picosecond photoconductivity of the films.     

Deep bandtail states picosecond intensity-dependent carrier dynamics of GaN epilayer under high excitation

Picosecond carrier dynamics of deep bandtail states (3.1 eV) in an unintentionally n-doped GaN epilayer at room temperature under high excitation densities (i.e., N ₀ = 1.0× 10¹⁹– 1.1× 10²⁰ cm^–3) have been investigated with nondegenerate femtosecond pump–probe (267/400 nm) reflectance ( R/R ₀). All R/R ₀ traces possess a 2 ps buildup time that represents an overall time for the initial non-thermal carrier population to relax towards the continuum extremes and then into the probed tail states. We observe a saturation of R/R ₀ initial (first 10 ps) recovery rate _i at a density of 5– 6×10¹⁹ cm^–3 close to the Mott transition threshold obtained from time-integrated PL measurements. Such a saturation phenomenon has been identified as the trap-bottleneck due to the bandtail states and deep traps. As N ₀ is further increased, _i accelerates due to the onset of Auger recombination as the trap-bottleneck becomes effective. The best fit by the Auger model for N ₀ in the range of the mid-10¹⁹–10²⁰ cm^–3 yields an Auger coefficient of C _a 5.0× 10^–30 cm⁶ s^–1.     

Determination of the change of nuclear charge radius of the119Sn Mössbauer transition by internal conversion

Radioactive¹¹⁹Sb was implanted into six host matrices (CaSnO₃, Pt, Y, Au,-Sn, Pb) and internal conversion electrons of the 23.87 keV transition in¹¹⁹Sn were measured with an iron-free magnetic spectrometer as well as Mössbauer spectra. In the analysis of the conversion spectra of outermost electrons, the overlapping K-LM Auger lines were subtracted using the Auger spectrum of tin measured with another source of^117mSn, and the shake-off effect accompanying the conversion process was considered. From the correlation between the Mössbauer isomer shifts and the intensity ratios of O-shell to N₁-shell conversion electrons, the change of the nuclear charge radius of the 23.87 keV transition of¹¹⁹Sn was deduced to be R/R=(0.87 ± 0.25) × 10^–4 for a uniform charge distribution ofR= 1.2 ×A ^1/3 fm or, equivalently, r²>—=(3.6 ± 1.0) ×10^–3 fm².     

Double Auger effect in the multiparticle perturbation theory framework

Within the framework of multiparticle perturbation theory (MPT), we investigate the correlation process of decay of an interior atomic vacancy accompanied by emission of two electrons simultaneously, i.e., the double Auger effect. In the lowest nonvanishing order of MPT, with respect to the interelectron interaction, expressions are obtained for calculation of the partial amplitudes and the probability of transitions in atoms with filled shells. Approximate formulas are discussed for the value of the probability in concrete transitions. Results are introduced and discussed for the numerical calculation of the double Auger transition 1s^–12s^–22p^–1q₁q₂ in Ne expressed in the Hartree-Fock basis of wave functions.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 78–82, July, 1989.     

Absorption of subpicosecond ultraviolet laser pulses in high-density plasma

The absorption of 250 fs KrF laser pulses incident on solid targets of aluminum, copper and gold has been measured for normal incidence as a function of laser intensity in the range of 10¹²–10¹⁴ W cm^–2 and as a function of polarization and angle of incidence for the intensity range of 10¹⁴–2.5×10¹⁵ W cm^–2. As the intensity increases from 10¹² W cm^–2 the reflectivity at normal incidence changes from the low-intensity mirror reflectivity value to values in the range of 0.5–0.61 at 10¹⁴ W cm^–2. For this intensity maximum absorption of 63–80% has been observed for p-polarized radiation at angles of incidence in the range of 54°–57°, increasing with atomic number. The results are compared with the expected Fresnel reflectivity from a sharp vacuum-plasma interface with the refractive index given by the Drude model and also to numerical calculations of reflectivity for various scale length density profiles. Qualitative agreement is found with the Fresnel/Drude model and quantitative agreement is noticed with the numerical calculations of absorption on a steep density profile with normalized collision frequencies, v/, in the range of 0.13–0.15 at critical density and normalized density gradient scale lengths, L/₀, in the range of 0.018–0.053 for a laser intensity of 10¹⁴ W cm^–2.At 2.5×10¹⁵ W cm^–2 a small amount of preplasma is present and maximum absorption of 64–76% has been observed for p-polarized radiation at angles of incidence in the range of 45°–50°.Dedicated to Prof. Dr. Rudolf Wienecke on the occasion of his 65^th birthdayOn leave from: Department of Electrical Engineering, University of Alberta, Edmonton, T6G 2G7, Canada     

Laser-induced CVD of rhodium

Stripes of rhodium metal were deposited by focusing an Ar⁺ laser (514.5 nm) onto glass and polyimide substrates in a heated vacuum cell that contained Rh(CO)₂acac vapor. Stripes were characterized by scanning profilometry, electrical resistivity, SEM and Auger measurements. Most stripes were 100–200 m wide and 1–3 m high. Very broad stripes (>500 m) were deposited when the Rh(CO)₂acac vapor pressure was greater than 1 Torr and when the laser power was more than 200 mW. Stripe resistivities were in general around 30 times that of the bulk material. Auger spectra show the presence of carbon in the stripes.     

Reliable measurement of the optical and dielectric parameters of liquid carbon tetrachloride in the wavelength region

The power absorption coefficient, the refractive index and the loss tangent data for carbon tetrachloride are presented in the region 3 mm–50 m (3 cm^–1–200 cm^–1). The data are compared with microwave and submillimeter wave literature values. The integrated band intensity and the integrated absorption intensity of the millimeter and submillimeter wave band and octopole moment are calculated and compared.     

Redox reaction of μ−O in water determined by the chemical shift

The chemical shift of ^–O in water, ice and in aqueous hydrogen peroxide (H₂O₂) was examined using ^–O resonance. Two distinct signals are obtained in water and ice. Using ⁺ resonance signal as a standard, the observed shiftsg are –7.0×10^–4 (signal A) and –12.1×10^–4 (signal B) respectively. The intensity of the two fractions are almost equivalent in water; however, in ice, the intensity of signal B decreases with increase of signal A. After the addition of hydrogen peroxide to the water signal B disappears, A increases, and the total amplitude is increased.     

Luminescence of AgCl excited by u.v. laser light

The spectral distribution and decay of the blue-green luminescence of AgCl has been measured at very low temperatures, using u.v. laser excitation. A structure was observed in the emission band at 77°K. The decay consists of three processes: a) a very fast process which follows the laser pulse (10^–8 sec), b) a fast exponential process which is also observed with low intensity u.v. excitation,(10^–4–10^–5 sec) and, finally, c) a slow exponential process (seconds).     

Observation of gain at 54.2 Å on balmer-alpha transition of hydrogenic sodium

Planer stripe and foil targets coated with NaF were irradiated with high intensity 351 nm laser radiation of 130 ps duration. Time-integrated as well as time-resolved measurement of gain on NaXIH at 54.2Å were made. A time-integrated gain of 1.2 _–1.1 ^+0.8 cm^–1 and a time-resolved peak gain of 3.2±1.0 cm^–1 were obtained. A detailed account of the experimental procedures for determination of gain is given.     

Estimation of the Optimum Concentration Interval of the Contents of Praseodymium, Neodymium, Europium, Holmium, and Erbium in a Solution

Based on the electronic absorption spectra of Pr³⁺, Nd³⁺, Eu³⁺, Ho³⁺, and Er³⁺ ions in 1 M aqueous solutions of chloric acid, calibration graphs have been constructed in a concentration of metals–optical density of a solution format for different frequencies. The band for praseodymium was used at 22,520 cm^–1, for neodymium at 17,380, 13,480, and 12,560 cm^–1, for europium at 25,380 cm^–1, for holmium at 18,580 and 15,580 cm^–1, and for erbium at 39,160, 26,480, and 19,160 cm^–1. The errors in determining the concentration of the indicated elements as a function of their content have been calculated. It is shown that for perchloric solutions of praseodymium it is possible to correctly determine its contents within the concentration range 0.1–1.5% at a frequency of 22,520 cm^–1; for neodymium the ranges are 0.4–1.0, 0.3–1.0, and 0.5–1.0% at 17,380, 13,480, and 12,560 cm^–1, respectively; for europium 0.4–1.5% at 25,380 cm^–1; for holmium — 0.2–1.5 and 0.4–1.5% at 15,580 and 18,580 cm^–1, and for erbium the range is 0.4–1.0% at frequencies of 39,160, 26,480, and 19,160 cm^–1.     

Submillimeter wave photoconductivity observation of shallow donors in In0.53Ga0.47As

The hydrogen like 1s 2p (m=–1,0,+1) transitions of two donors have been observed in high intensity magnetic fields up to 8.5T. The m=–1 transitions ocurred between 2 cm^–1 and 25 cm^–1. The signature curves for donors in ternary semiconductor In_0.53Ga_0.47As have now been established.Work supported by the U.s. Air Force Office of Scientific Research under Contract # AFOSR-78-3708-DSupported by the National Science Foundation     

Raman studies of nonlinear phenomena in fullerene crystallites

The resonant Raman scattering of C₆₀ crystallites is monitored as a function of excitation intensity at 514.5 nm. At low intensities, a strong line at 1468 cm^–1 is observed. No feature at 1459 cm^–1 is observable. With increasing intensities, the 1468 cm^–1 line shifts continuously and reversibly to lower frequencies. The mode softening is nonlinearly dependent on the input intensity and is accompanied by a nonlinear increase in the Raman intensity. The spectral changes are discussed in terms of a nonlinear reduction in force constant and increase in bond polarisability as a result of an increased intermolecular delocalisation of the -electron cloud. The nonlinear changes are associated with the nonlinear luminescence and photoconductive response observed in fullerenes and are contrasted to the irreversible phototransformation recently discussed.     

Gas formation in liquid in initial stages of a pulsed discharge

Gas formation in electrolytes with=10^–2–10^–4–1cm^–1, distilled water = 10^–5-1.5 ·10^{–6 –1}cm^–1, and chemically pure n-hexane in the initial stages of formation of discharge with rectangular voltage pulses of 0.67 and 1.85 sec duration is investigated. The experimental results are compared with the results of approximate calculations.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No. 11, pp. 42–47, November, 1972.The authors thank V. V. Ryumin for taking part in the discussion of the results and V. V. Lopatin for participation in the experiments with electron-optical light amplifier.     

Superconducting transition temperature and low temperature resistivity in the niobium-hydrogen system

The impact-ionization rate in InSb at 300 K between 200 and 500 V/cm is found to beg(E)=210⁹ exp (–10³/E)s^–1 withE being the electric field (V/cm).We use current-voltage characteristics measured by A.C. Prior in 1957 [1]. In evaluating the impact-ionization rate we take into account Auger and linear recombination, surface generation,z-pinch compression, and doping of the sample. We also discuss the effects of ohmic heating and change in electron temperature. The rates evaluated from four independent measurements done by Prior agree reasonably well.     

Maskless photoassisted etching of N-type Ga0.47In0.53As in basic solutions

The maskless photoassisted etching of n-type Ga_0.47In_0.53As is examined for basic KOH solutions in comparison with GaAs and InP material. The etch rate increases with laser intensity and with carrier concentration up to a saturation value. The best etch rate is obtained with molar KOH in ethyl alcohol (7 ms^–1 for laser intensity 10⁴ W cm^–2). Selective etching have been realized on heterojunction in order to isolate p-n junctions without the help of masks.     

Intensity of x-ray solar radiation and the value of the anomalous absorption of radio waves during periods of sudden ionospheric disturbances

An experimental statistical dependence is obtained between the intensity of the x-ray radiation of the sun in the range 1–8 å (I_1–8) and the value of the anomalous absorption of radio waves at a frequency of I=13 MHz during periods of sudden ionospheric disturbances. This dependence has the form ₁₃ I _1–8 ^0.8 cos , and can be used for the operative classification of bursts of x-ray radiation. Its character is explained by a decrease in the coefficient of the losses of electrons with a rise in the intensity of the x-ray radiation.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 21, No. 11, pp. 1558–1562, November, 1978.I wish to thank E. A. Benediktov and V. V. Belikovich for their interest in the work and their critical evaluation of its results.     

Observation of new laser transitions and saturation effects in optically pumped NO

We report investigations of an NO laser employing specially profiled magnetic fields of up to 3.4T, and F₂ pump laser intensities as great as 20 MW cm^–2. We have observed laser oscillation at 226 nm on a rotational branch of the B'-X/it(3–11) band of NO for the first time, in addition to the previously reported oscillation at 218 nm on the B'-X/it(3–10) band. We have also observed visible laser emission on a rotational branch of the B ²-B ² II(3–1) band of NO. Saturation of the NO laser pulse energy with pump intensity has been observed, the total NO laser pulse energy having been increased to 490 J. The possibility of increasing the NO laser pulse energy towards 1 mJ per transition is discussed.