三终端非对称夹角石墨烯纳米结的弹道热整流

提出并通过非平衡格林函数法验证了一个三终端石墨烯纳米结弹道热整流的理论模型——石墨烯带两端作为左右热极,其上加一倾斜分支作为控制热极形成一个Y形纳米结.结果发现:热流倾向于从与控制热极夹角较小的热极流向另一个热极;控制热极与左右热极间夹角差别的增大有利于热整流,这一现象在扶手椅型石墨烯带上尤其明显;锯齿型石墨烯带加上与其呈30?夹角的扶手椅型分支具有最明显的热整流效应;对于左右热极宽度不同的热整流器,倾斜控制热极可以使整流比在原来的基础上提高超过50%.     

六角氮化硼纳米带的几何和电子结构理论研究

本文采用密度泛函B3LYP方法在6-31G*水平上,对一系列不同宽度的锯齿型和扶手椅型六角氮化硼纳米带进行了理论研究。结果表明纳米带宽度对体系的性质有规律性的影响。随着宽度的增加,纳米带不同位置的硼氮键键长差异逐步减小从而提高了整个体系的共轭性;锯齿型纳米带的能隙单调减小而扶手椅型纳米带的能隙在减小的同时出现振荡,且振幅随宽度逐渐减小。锯齿型氮化硼纳米带的化学势在特定宽度出现了极值点。前线分子轨道的分布随着宽度的增加出现了非均匀分布,呈现出向边界偏移的现象。     

六角氮化硼纳米带的几何和电子结构理论研究

本文采用密度泛函B3LYP方法在6-31G*水平上，对一系列不同宽度的锯齿型和扶手椅型六角氮化硼纳米带进行了理论研究。结果表明纳米带宽度对体系的性质有规律性的影响。随着宽度的增加，纳米带不同位置的硼氮键键长差异逐步减小从而提高了整个体系的共轭性；锯齿型纳米带的能隙单调减小而扶手椅型纳米带的能隙在减小的同时出现振荡，且振幅随宽度逐渐减小。锯齿型氮化硼纳米带的化学势在特定宽度出现了极值点。前线分子轨道的分布随着宽度的增加出现了非均匀分布，呈现出向边界偏移的现象。     

石墨带的晶格动力学研究

基于晶格动力学理论,采用力常数模型,计算了石墨带的声子色散关系、振动模式密度和比热.计算结果表明,石墨带的声子谱特征介于一维碳纳米管和二维石墨片之间.扶手椅型和锯齿型石墨带的中、高频声子支分别与锯齿型和扶手椅型碳纳米管的类似.由于声子限域效应,低频声子支随着石墨带带宽的改变出现明显的频移现象.振动模式密度在高频区几乎不敏感于带宽,而低频区的峰位随着带宽的增加而逐渐向低频移动.此外,无论是在低温还是高温,比热都随着带宽的增加而逐渐降低,呈现量子尺寸效应.在300K时,比热可以拟合成C_V=C_Vg+A/n,其中C_Vg为石墨片的热容,而A/n项反映了石墨带中边缘效应对比热的影响. 关键词： 石墨带 声子色散关系 比热     

扶手椅型石墨纳米带的双空位缺陷效应研究

采用基于密度泛函理论的第一性原理电子结构和输运性质计算,研究了扶手椅型石墨纳米带（具有锯齿边缘）的双空位缺陷效应.研究发现：双空位缺陷的存在并没有改变石墨纳米带的金属特性,但改变了费米面附近的能带结构.同时,双空位缺陷的取向对石墨纳米带的输运性质有很重要的影响.对于奇数宽度的纳米带,斜向双空位缺陷使得石墨带导电性能减弱,而垂直双空位能基本保留原有的线性伏安特性,导电性能降低较少;对于偶数宽度的纳米带,斜向双空位缺陷会使石墨带导电性能明显增强,而垂直双空位缺陷则具有完整石墨带的输运性质. 关键词： 石墨纳米带 585双空位缺陷 电子结构 输运性质     

多孔石墨烯纳米带各向异性和超低热导的理论研究

利用非平衡格林函数方法研究了多孔石墨烯纳米带的热输运性质.结果表明,由于纳米孔洞的存在,多孔石墨烯纳米带的热导远低于石墨烯纳米带的热导.室温下,锯齿型多孔石墨烯纳米带的热导仅为相同尺寸锯齿型石墨烯纳米带热导的12％.这是由于多孔石墨烯纳米带中的纳米孔洞导致的声子局域化引起的.另外,多孔石墨烯纳米带的热导具有显著的各向异...     

堆叠石墨片对锯齿型石墨纳米带电子输运的影响

采用格林函数方法研究了堆叠石墨片对锯齿型石墨纳米带电子输运性质的影响,计算了两种不同堆叠方式下锯齿型石墨纳米带的电导.研究发现,由于堆叠石墨片与石墨纳米带的耦合作用,锯齿型石墨纳米带的电导谱出现了电导谷.在远离费米能处,两种堆叠方式下的电导谷位置相近甚至重合;而在费米能附近,两种堆叠方式下的电导谷存在差异.此外,讨论了堆叠石墨片的几何尺寸对锯齿型石墨纳米带电子输运的影响.结果显示,随石墨片几何尺寸的增大,锯齿型石墨纳米带在两种堆叠方式下远离费米能处的电导谷逐渐向费米能方向移动,同时其费米能附近的电导谷在两种堆叠方式下的差异随石墨片尺寸的增大变得更为明显.研究结果表明,堆叠石墨片能够有效地调制锯齿型石墨纳米带的电子输运性质.     

双空位缺陷石墨纳米带的电子结构和输运性质研究

基于第一原理电子结构和输运性质计算,研究了585双空位拓扑缺陷对锯齿（zigzag）型石墨纳米带（具有椅型（armchair）边）电子结构和输运性质的影响.研究发现,585双空位缺陷的存在使得锯齿型石墨纳米带的能隙增大,并在能隙中出现了一条局域于缺陷处的缺陷态能带,双空位缺陷的取向也影响其能带结构.另外,585双空位缺陷对能隙较小的锯齿型石墨纳米带输运性质的影响较大,而对能隙较大的锯齿型石墨纳米带影响很小,缺陷取向并不显著影响纳米带的输运性质. 关键词： 石墨纳米带 585空位缺陷 电子结构 输运性质     

嵌入线型缺陷的石墨纳米带的热输运性质

采用非平衡格林函数方法研究了嵌入有限长、半无限长、 无限长线型缺陷的锯齿型石墨纳米带 (ZGNR)的热输运性质.结果表明, 缺陷类型和缺陷长度对ZGNR的热导有重要影响. 当嵌入的线型缺陷长度相同时, 包含t5t7线型缺陷的石墨纳米带比包含Stone-Wales线型缺陷的条带热导低. 对于嵌入有限长、同种缺陷的ZGNR, 其热导随线型缺陷的长度增加而降低, 但是当线型缺陷很长时, 其热导对缺陷长度的变化不再敏感.通过比较嵌入有限长、半无限长、无限长线型缺陷的ZGNR, 我们发现嵌入无限长缺陷的条带比嵌入半无限长缺陷的条带热导高, 而后者比嵌入有限长线型缺陷的条带热导高. 这主要是因为在这几种结构中声子传输方向的散射界面数不同所导致的. 散射界面越多, 对应的热导就越低. 通过分析透射曲线和声子局域态密度图, 解释了这些热输运现象. 这些研究结果表明线型缺陷能够有效地调控石墨纳米带的热输运性质. 关键词： 石墨烯 线型缺陷 热导     

多空穴错位分布对石墨纳米带中热输运的影响

利用非平衡格林函数方法研究了石墨纳米带中三空穴错位分布对热输运性质的影响.研究结果发现:三空穴竖直并排结构对低频声子的散射较小,导致低温区域三空穴竖直并排时热导最大,而在高频区域,三空穴竖直并排结构对高频声子的散射较大,导致较高温度区域三空穴竖直并排时热导最小;三空穴的相对错位分布仅能较大幅度地调节面内声学模高频声子的透射概率,而三空穴的相对错位分布能较大幅度地调节垂直振动膜高频声子和低频声子的透射概率,导致三空穴的相对错位分布不仅能大幅调节面内声学模和垂直振动模的高温热导,也能大幅调节垂直振动模的低温热导.研究结果阐明了空穴位置不同的石墨纳米带的热导特性,为设计基于石墨纳米带的热输运量子器件提供了有效的理论依据.     

Thermal transport in four-terminal graphene nano-junctions

The thermal transport properties of four-terminal graphene nano-junctions (FGNJs) consisting of semi-infinite armchair-edged nanoribbon and zigzag-edged nanoribbon were calculated. The thermal transport in FGNJs is sensitive to their geometric shape. The thermal conductance of FGNJs depends on the width of semi-infinite graphene nanoribbons and center region. These thermal transport phenomena can be explained by analyzing the phonon transmission coefficient. Compared with previous thermal rectifiers, reverse modulation can be obtained by changing the width of the thermal terminal. The results provide significant physical models and theoretical validity in designing the thermal devices based on the graphene nano-junctions.     

Ab initio study of the electronic and transport properties of waved graphene nanoribbons

We apply the nonequilibrium Green's function method based on density functional theory to investigate the electronic and transport properties of waved zigzag and armchair graphene nanoribbons. Our calculations show that out-of-plane mechanical deformations have a strong influence on the band structures and transport characteristics of graphene nanoribbons. The computed I-V curves demonstrate that the electrical conductance of graphene nanoribbons is significantly affected by deformations. The relationship between the conductance and the compression ratio is found to be sensitive to the type of the nanoribbon. The results of our study indicate the possibility of mechanical control of the electronic and transport properties of graphene nanoribbons.     

High thermoelectric performance of one graphene nanoribbon with line defects

We investigate the quantum transport through zigzag graphene nanoribbons with embedded “5-7-5”-edge line defects, by means of the non-equilibrium Green's function technique. It is found that when two semi-infinite line defects exist in the nanoribbon, notable Fano antiresonance takes place in the quantum transport process, which enables to drive the apparent thermoelectric effect. We propose this structure to be a promising candidate for improving the thermoelectric efficiency based on graphene nanoribbons.     

Multifunctionality for the nanojunction of a rotating p-phenylene vinylene molecule between graphene leads

With the multi-functional molecular device based on graphene nanoribbon being deeply studied in experiment, the zigzag-edged graphene device is still worth to investigate. Employing the ab-initio method, the spin transport properties have been studied for the nanojunctions consisting of a p-phenylene vinylene (PPV) molecule sandwiched between two-probe leads of zigzag-edged graphene nanoribbons (ZGNRs). A series of obvious electromagnetic transmission functionalities, including spin switching, negative differential resistance (NDR), dual spin-filtering, magnetoresistance and spin-diode behaviors, are numerically referred in the proposed molecular junction within spin parallel or antiparallel configurations. The performance of switching and double spin filtering can be explained by the transport spectra or total transmission pathways. Besides, the rectification effect is due to the asymmetry spatial distribution of the local density of states as well as the corresponding coupling between the PPV molecule and leads. It is expected that the designed models can be ideal candidate for future spintronic device.     

Electronic transport through superlattice-graphene nanoribbons

In this work, we study quantum transport properties of superlattice-graphene nanoribbons (SGNRs) attached to two semi-infinite metallic armchair graphene nanoribbon (AGNR) leads. The calculations are based on the tight-binding model and Green’s function method, in which localization length, density of states (DOS) and conductance of the system are calculated, numerically. By controlling the layered boron concentration, this kind of system can separate the extended states from the localized states. Our results may have important applications for building blocks in the nano-electronic devices based on GNRs.     

基于量子修正的石墨烯纳米带热导率分子动力学表征方法

本文提出了基于量子修正的非平衡态分子动力学模型,可用于石墨烯纳米带热导率的表征.利用该模型对不同温度下,不同手性及宽度的石墨烯纳米带热导率进行了研究,结果发现:相较于经典分子动力学模型给出的热导率随温度升高而单调下降的结论,在低于Debye温度的情况下,量子修正模型的计算结果出现了反常现象.本文研究还发现,石墨烯纳米带的热导率呈现出明显的边缘效应及尺度效应:锯齿型石墨烯纳米带的热导率明显高于扶手椅型石墨烯纳米带;全温段的热导率及热导率在低温段随温度变化的斜率均随宽度的增加而增大.最后,文章用Boltzmann声子散射理论对低温段的温度效应及尺度效应进行了阐释,其理论分析结果说明文章所建模型适合在全温段范围内对不同宽度和不同手性的热导率进行精确计算,可为石墨烯纳米带在传热散热领域的应用提供理论计算和分析依据.     

Effect of disorder with long-range correlation on transport in graphene nanoribbon

Transport in disordered armchair graphene nanoribbons (AGR) with long-range correlation between quantum wire contacts is investigated by a transfer matrix combined with Landauer's formula. The metal-insulator transition is induced by disorder in neutral AGR. Therein, the conductance is one conductance quantum for the metallic phase and exponentially decays otherwise, when the length of AGR approaches infinity and far longer than its width. Similar to the case of long-range disorder, the conductance of neutral AGR first increases and then decreases while the conductance of doped AGR monotonically decreases, as the disorder strength increases. In the presence of strong disorder, the conductivity depends monotonically and non-monotonically on the aspect ratio for heavily doped and slightly doped AGR, respectively. For edge disordered graphene nanoribbon, the conductance increases with the disorder strength of long-range correlated disordered while no delocalization exists, since the edge disorder induces localization.