Multilayer SiO2 and TiO2 coatings on glasses by the sol-gel process

Glass films of pure SiO₂ and TiO₂ have been prepared on sodalime silica flat slide glasses by the sol-gel process using the dip-coating technique from TEOS and Ti(OC₃H₇)₄ solutions. The various parameters such as chemicals concentrations, viscosity, type of catalyst, withdrawal speed and temperature of densification leading to the obtention of good and adherent coatings with definite film thicknesses are reported. The same technique has been used for the depositon of layers of colored films SiO₂---M_xO_y (M = Co, Mn, Nd and Cr). Brilliant yellow coatings have been obtained with TiO₂---CeO₂.     

Thin SiO2---TiO2---ZrO2 films from alkoxide solutions

Different solutions containing alkoxides of silicon, titanium, and zirconium have been prepared. Some of their properties like the time dependent viscosity and the gelling time have been measured and are reported here for different H₂O, HCl, ethanol and/or formamide contents. Microscope slides have been dip coated in these solutions. After baking, film thickness and chemical durability have been determined.

In order to get good SiO₂---TiO₂---ZrO₂ glass coatings, the withdrawal speed should not exceed 5 cm/min unless the viscosities of the solutions are reduced by the addition of ethanol. By such a dilution, the film thickness could also be reduced, while the addition of formamide caused a delayed increase of the viscosity and increased gelling times. For this reason, solutions containing formamide can be used for longer periods. The chemical durability of the substrates against boiling NaOH solution is enhanced by the SiO₂---TiO₂---ZrO₂ glass coatings.     

Colloidal sol/gel processing of ultra-low expansion TiO2/SiO2 glasses

A series of titania-silica glasses with 0–9% TiO₂ were fabricated using a sol/gel process. The sol was prepared by dispersing colloidal silica fume in an aqueous solution of titania which was synthesized through the acid-catalyzed hydrolysis of titanium isopropoxide. The sols gelled in 2–4 days, and then were dried for 6–8 days. The dry gels were sintered at 1450–1500°C to produce clear, dense, microstructure-free glasses. The gels underwent a total shrinkage of 50% to yield glass rods about 50 mm long and 5 mm in diameter, or glass discs about 4 cm in diameter and 5 mm thick. The drying step was most critical in the production of crack-free specimens.

In the gel, the transmission electron microscope (TEM) revealed the presence of 1–5 nm rutile microcrystallites uniformly distributed within a network of colloidal silica particles. After sintering to 1450–1500°C, though, a dense, transparent, microstructure-free glass was created. Fourier transform infrared spectroscopy (FTIR) verified the formation of an amorphous solid-solution of titania and silica after sintering.

The thermal expansion of the glasses was measured using a differential dilatometer. The average linear coefficients of thermal expansion (CTE @ 25–675°C) varied between +5 × 10⁻⁷ and −0.2 × 10⁻⁷°C⁻¹ in the range 0 to 9% TiO₂. The glass with 7.2% TiO₂ exhibited a zero thermal expansion coefficient at 150–210°C. The hysteresis in CTE on heating and cooling was of the order of 0.01–0.02 ppm.     

Structural transformation of the TiO2---SiO2 system gel during heat-treatment

The gel formation of the (100-x)TiO₂·xSiO₂ (x = 0–10 mol%) system has been studied. The progressive elimination of residues was followed by DTA and TGA curves. DTA curves showed that the formation of anatase during heat treatment could be sensibly slowed down with the increase of SiO₂. The relationship between the gel composition and crystallization temperature of anatase has been systematically investigated. The X-ray diffraction spectra demonstrated that the crystallization temperature of anatase is 400°C for TiO₂ gel and 430°C for 90TiO₂ - 10SiO₂ gel. The infrared absorption spectra were used to follow the structural transformation of gels heat-treated at different temperatures. With the help of EPR it is evident that titanium ions exist only in tetravalence.     

Surface modification of SiO2 glass by laser processing

Various oxide films on SiO₂ glass substrates were irradiated by a laser beam. A continuous CO₂ laser source (wavelength 10.6 μm) was used for this purpose; the composition change at the surface layer was determined by Rutherford backscattering spectrometry (RBS). All the alkaline-earth oxides as well as those of lanthanum and yttrium, entered the glass after treatment. ZrO₂ and CeO₂, however, did not enter the SiO₂ glass due to laser irradiation. It is interesting, however, that a film of ZrO₂ + Al₂O mixture easily entered into the SiO₂ glass by laser processing. The conditions and mechanism of laser-enhanced interaction of ZrO₂ or other oxide films with SiO₂ glass surfaces are discussed especially in view of their structural behaviour in glass.     

Solidification of superalloy in a SiO2–ZrO2–B2O3 coating mould

The preparation of glass-lined coating mould from gels in the ternary system of SiO₂–ZrO₂–B₂O₃ has been investigated. The crystallization characterization and high temperature structure stability of this coating mould are demonstrated. We can find that the crystallization of t-ZrO₂ as well as the tetragonal to monoclinic phase transformation are, respectively, retarded and impeded owing to the encasement of SiO₂ matrix. While the inhibitive effect of B₂O₃ on crystallization of the SiO₂–ZrO₂–B₂O₃ coating mould is explained. Finally, DD3 single crystal superalloy melt can realize highly undercooled rapid solidification by adopting this coating mould, which further evinces that SiO₂–ZrO₂–B₂O₃ coating mould has an ideal nucleation inhibition for superalloy.     

SAXS investigations of structure of formation in alcoholic ZrO2---SiO2 solutions

Small-angle X-ray scattering was used to examine in situ formation of ZrO₂---SiO₂ structures in alcoholic solution of tetraethoxysilan (TEOS) as a function of the ratio of ZrO₂ to SiO₂. For the moment of the first measurement (15 min after the preparation) primary particles with R_g ≈ 1.5 nm exist in all investigated mixed gels. These particles aggregated to secondary clusters. The resulting clusters can be described by means of fractal theory, where the determining mechanism of formation is cluster-cluster aggregation (diffusion or chemical limited). The time of gelation is a function of the ZrO₂ concentration. The higher the ZrO₂ concentration in the solution, the faster is the aggregation to secondary clusters. Gelation times were between 170 and 970 h.     

Some characteristics of glass in the Al2O3---B2O3---SiO2 system from the gel

The colorless and transparent glasses in the Al₂O₃---B₂O₃---SiO₃ system with high B₂O₃ and SiO₂ content were prepared from gels at low temperature. Their IR spectra not only revealed the evolution of the gel to glass conversion, but also showed that the formation of mixed bonds in the glasses obtained did not show any effect due to the B₂O₃ content. The accuracy of the glass composition is dependent upon the SiO₂/B₂O₃ molar ratio. The higher the ratio, the less the deviation of the analyzed compositions of the resulting glasses from their original calculated values. It is obvious that the higher the ratio, the lower the thermal expansion coefficient and the higher the transformation temperature of the glass, and the temperature at which the thermal contraction reaches an equilibrium is higher.     

Surface modification of a TiO2 film electrode prepared by the sol-gel method and its effect on photoelectrochemical behavior

The surface of a TiO₂ film electrode, about 1 μm thick, prepared by the sol-gel method, was modified by being additionally coated with about 0.1 μm thick TiO₂---SiO₂, TiO₂---ZrO₂ or TiO₂---Al₂O₃ films. The effect of the additional coating on the photoelectrochemical properties of a TiO₂ film electrode was investigated in detail. On addition of the second additive to TiO₂, the flat band potential was shifted toward negative potential for SiO₂ and positive potential for ZrO₂ and Al₂O₃, which is attributed to the change in the point of zero zeta potential (pzzp), not in the electron affinity (EA). However, enhancement in photocurrent was not observed for all the cases.     

Effects of SiO2 overlayer at initial growth stage of epitaxial Y2O3 film growth

We investigated the dependence of the Y₂O₃ film growth on Si surface at initial growth stage. The reflection high-energy electron diffraction, X-ray scattering, and atomic force microscopy showed that the film crystallinity and morphology strongly depended on whether Si surface contained O or not. In particular, the films grown on oxidized surfaces revealed significant improvement in crystallinity and surface smoothness. A well-ordered atomic structure of Y₂O₃ film was formed on 1.5 nm thick SiO₂ layer with the surface and interfacial roughness markedly enhanced, compared with the film grown on the clean Si surfaces. The epitaxial film on the oxidized Si surface exhibited extremely small mosaic structures at interface, while the film on the clean Si surface displayed an island-like growth with large mosaic structures. The nucleation sites for Y₂O₃ were provided by the reaction between SiO₂ and Y at the initial growth stage. The SiO₂ layer known to hinder crystal growth is found to enhance the nucleation of Y₂O₃, and provides a stable buffer layer against the silicide formation. Thus, the formation of the initial SiO₂ layer is the key to the high-quality epitaxial growth of Y₂O₃ on Si.     

Toughened glass-ceramics containing ZrO2 and Al2O3 prepared by the sol-gel process from metal alkoxides

Glasses of compositions 5ZrO₂·5SiO₂(ZS), 5ZrO₂·Al₂O₃·4SiO₂(ZAS) and 5 5ZrO₂·0.5Al₂O₃·0.5Na₂O·4SiO₂(ZANS) were prepared by the sol-gel process from metal alkoxides and sintered to make glass-ceramics. Tetragonal ZrO₂ was precipitated by heat treatment at 900 to 1300°C. The activation energy for tetragonal ZrO₂ crystal growth was extremely high in Al₂O₃ containing glasses. ZAS and ZS were sintered to the near theoretical densities above 1200°C, at which the predominant phase was tetragonal ZrO₂. On the other hand, for ZANS, high densification was not attained owing to the large pores enclosed by the glass phase. Strength and fracture toughness increased with the densification and the crystal growth of tetragonal ZrO₂, reaching 450 MPa and 9 MN/m^1.5, respectively.     

Hydrolytic resistance of Na2O---B2O3---SiO2 gels prepared by sol-gel process

Alkoxide derived gels were prepared in the system Na₂O---B₂O₃---SiO₂. The gel compositions were situated in the liquid-liquid immiscibility area of the phase equilibrium diagram.

Hydrolytic resistance tests were performed on the gels heat-treated at temperatures ranging between 120 to 850 °C. The Na₂O, B₂O₃ and SiO₂ extracted from the attack gels were analyzed. The experimental results indicate that the amount of B₂O₃ has a significant influence on the chemical durability of the heat-treated gels. At temperatures of 850 °C the greater the B₂O₃ mol% the greater are the amounts of Na₂O and B₂O₃ extracted. Different behaviour was observed for gels heat-treated at 600 °C where the amounts of B₂O₃ and Na₂O extracted slightly increases as the B₂O₃ mol% increases. Small amounts of extracted SiO₂ were always observed.

These results are complemented with other measurements so that an explanation of the controlling mechanism is given.     

Rotary target method to prepare thin films of CdS/SiO2 by pulsed laser deposition

Thin films of CdS-doped SiO₂ glass were prepared by using the conventional pulsed laser deposition (PLD) technique. The laser target consisted of a specially constructed rotary wheel which provided easy control of the exposure-area ratio to expose alternately the two materials to the laser beam. The physical target assembly avoided the potential complications inherent in chemically mixed targets such as in the sol–gel method. Time-of-flight (TOF) spectra confirmed the existence of the SiO₂ and CdS components in the thin-film samples so produced. X-ray diffraction (XRD) and atomic force microscopy(AFM) results showed the different sizes and structures of the as-deposited and annealed films. The wurtzite phase of CdS was found in the 600^oC-annealed sample, while the as-deposited film showed a cubic–hexagonal mixed structure. In the corresponding PL (photoluminescence) spectra, a red shift of the CdS band edge emission was found, which may be a result of the interaction between the CdS nanocrystallite and SiO₂ at their interface.     

Phonons in TiO2---SiO2 glasses

We report the infrared and Raman studies of titanium doped vitreous silica glasses for a number of titanium concentrations. The vibrational modes associated with the randomly oriented chains of SiO₄ tetrahedra show broadenings and shifts. The LO-TO splitting of some Raman active modes decreases with increasing titanium concentration. This is attributed to the decrease in long-range coulomb fields associated with the chains of SiO₄ tetrahedra which are broken by the titanium atoms. The results are discussed in the context of random network models. An increase in the average intertetrahedral angle of the SiO₄ network is calculated from the data. This explains the anomalous decrease in the density of TiO₂---SiO₂ glasses with increasing titanium content. We identify two new modes associated with the distorted titanium tetrahedra. A polarized Raman mode at 1115 cm⁻¹ which is infrared inactive and an unpolarized Raman mode at 945 cm⁻¹ which is infrared active are observed.     

Silicate groupings in glassy and crystalline 2PbO·SiO2

The type and the amount of silicate groupings existing in glassy and crystalline 2PbO·SiO₂ have been determined by direct chemical methods: paper chromatography, trimethylsilylation combined with gas-liquid partition chromatography and by the molybdate method. The results obtained by these three different methods are in good agreement and demonstrate, that glassy 2PbO·SiO₂ and each of the three main crystalline polymorphs are characterized by its own specific silicate anion distribution: the distribution in vitreous 2PbO·SiO₂ is of a polyanionic nature; in T---Pb₂SiO₄ dimetic groups [Si₂O₇]⁶⁻ prevail; M₁---Pb₂SiO₄ contains predominantly [Si₄O₁₂]⁸⁻ rings and H---Pb₂SiO₄ is a typical polysilicate with chain anions [SiO₃²⁻]_n. The results fit a structural model according to which glass is a random array of discrete polyatomic groupings; the gradual transition from the glassy state to the stablest crystalline structure is connected with degradation and polymerization of silicate anions.     

NMR studies of Na2O---B2O3---SiO2 glasses of mid-alkali content

¹¹B Fourier transform spectra have been used to study the structure of Na₂O---B₂O₃---SiO₂ glasses of mid-alkali content. Based on the measurements of the fraction N₄ of four-coordinated borons, it has been found that for K = mol.% SiO₂/mol.% B₂O₃ 8 and R = mol.% Na₂O/mol.% B₂O₃ = 1, N₄ is obviously smaller than 1 rather than equal to 1 as assumed in the relevant literature. Only when R reaches a value appropriately greater than 1, can the case where N₄ = 1 occur. A structural model suggested in this paper can satisfactorily explain the fact.     

Selective epitaxial growth by UHV-CVD using Si2H6 and Cl2

The conditions under which selective epitaxial growth (SEG) is achieved in UHV-CVD with Si₂H₆ are determined by the amount of Si₂H₆ molecules being supplied, and there is a critical gas supply amount (F_c) beyond which SEG will break down and lose its selectivity. The value of F_c is itself determined by two factors, growth temperature and the material used for masking, i.e. SiO₂, Si₃N₄. We found that this limiting factor of F_c was increased through the addition of a small amount of Cl₂, and that after such addition, the resulting decrease in growth rate is minimal.     

Electronic traps in mixed Si1−xGexO2 films

Thermally stimulated luminescence (TSL) and infrared (IR) spectroscopy were measured in plasma grown Si_1−xGe_xO₂ (x=0, 0.08, 0.15, 0.25, 0.5) with different thicknesses (12–40 nm). A comparison with the TSL properties of thermally grown SiO₂ and GeO₂ was also performed. A main IR absorption structure was detected, due to the superposition of the peaks related to the asymmetric O stretching modes of (i) Si–O–Si (at ≈1060 cm⁻¹) and (ii) Si–O–Ge (at 1001 cm⁻¹). Another peak at ≈860 cm⁻¹ was observed only for Ge concentrations, x>0.15, corresponding to the asymmetric O stretching mode in Ge–O–Ge bonds. A TSL peak was observed at 70°C, and a smaller structure at around 200°C. The 70°C peak was more intense in all Ge rich layers than in plasma grown SiO₂. Based on the thickness dependence of the signal intensity we propose that at Ge concentrations 0.25x0.5 TSL active defects are localised at interfacial regions (oxide/semiconductor, Ge poor/Ge rich internal interface, oxide external surface/atmosphere). Based on similarities between TSL glow curves in plasma grown Si_1−xGe_xO₂, thermally grown GeO₂ and SiO₂ we propose that oxygen vacancy related defects are trapping states in Si_1−xGe_xO₂ and GeO₂.     

XAS study of lanthanum coordination environments in glasses of the system K2O---SiO2---La2O3

The La L₁ and L₃ XANES and L₃ EXAFS have been investigated for the series of glasses 10K₂O---50SiO₂---x La₂O₃ (x = 1, 5, 10) and (10 − x)K₂O---40SiO₂−(x/3)La₂O₃ (x = 7.5, 5, 2.5) and model compounds La₂O₃, LaAlO₃, LaPO₄, La₂NiO₄, La₂CuO₄ and La(OH)₃. An edge resonance at 25 eV above the L₁ edge in the glass spectra is concentration-dependent, decreasing in intensity with increasing lanthanum concentration. The 2s → nd forbidden transition increases with La₂O₃ concentration, indicating a reduction in the ‘average’ site symmetry of the first coordination shell of La. Mapping _X(k) space, which is a new and promising technique, was employed to extract bond distance, coordination number and thermal parameters from the EXAFS. By this method, one calculates the complete _X(k) space a function of all physically reasonable values of the adjusted parameters in all possible combinations. The advantage in this method is the assurance of a global minimum. Bond lengths were comparable to those obtained by Fourier transforming the phase corrected EXAFS. The values are 2.42 Å (± 0.03 Å) for La---O. The coordination numbers (N ≤ 7 ± 1.5) were derived by mapping and comparison to the published structures for other La compounds. _X(k) mapping is compared with least-squares fitting the data, and the correlation between the Debye-Waller factor and coordination number is also discussed.     

Diffraction study of Li2O·SiO2 glass with computer simulation

The structure of Li₂O·SiO₂ glass has been determined by the pair-function analysis of the radial distribution function (RDF) obtained by X-ray and neutron diffraction measurements. The structure models were constructed by the molecular dynamics method (MD). The calculated RDFs, the summation of the pair-functions of the model, were compared with the observed RDFs while varying the MD parameters. Taking advantage of the negative scattering length of Li for neutron diffraction, the glass structure was investigated in detail, and it was found that the chains of SiO₄ tetrahedra bend at 20 °, which is a little less than for the crystal (23.48 °). It is known that the larger the size of the alkali ions (Na⁺ → K⁺ → Cs⁺), the smaller the bending angle of the chains. It was found that this rule also applies to Li⁺.