不同封装方式对肖特基二极管高频性能的影响

肖特基二极管是太赫兹接收机的关键器件,通过在高频下对不同封装形式的肖特基二极管进行建模仿真,研究不同封装方式对肖特基二极管性能的影响。首先通过建立肖特基二极管的仿真模型,在高频结构仿真软件HFSS中对肖特基二极管在0~120GHz频段进行仿真,得到该肖特基二极管的S参数,并对S参数仿真结果和实测结果进行对比,证明了该二极管模型的准确性。然后分别建立肖特基二极管的普通封装模型和肖特基二极管的倒装芯片(flip-chip)封装模型,并对这两种封装模型进行仿真,得到其在两种不同封装结构下的S参数,进而对两种不同封装方式的S参数的-3dB带宽以及相位一致性进行对比分析。最终,对应用于太赫兹波段的肖特基二极管由于封装不同而带来的带宽以及相位的区别及其成因进行分析,论证了flipchip封装更适合应用于太赫兹波段的肖特基二极管,与普通封装相比,该封装在高频下对肖特基二极管的电性能有比较大的改进。     

基于Ritz-Galerkin方法的太赫兹二极管检波器非线性分析

肖特基二极管检波器是太赫兹ASK/OOK通信系统的关键器件之一, 为了更好地分析肖特基二极管检波器的非线性特性, 从检波器的电路模型出发, 基于Ritz-Galerkin方法, 建立了检波器非线性特性的理论分析模型。并利用模型对检波器输出信号强度和灵敏度作了理论预测, 表明该理论模型能够精确预测检波器的非线性特性。最后利用该理论模型研究了输入信号强度、负载阻抗和外界温度对0.34 THz肖特基二极管检波器非线性特性的影响。结果表明随着功率的增加, 检波器由平方率区渐变至线性区只在特定条件下才成立, 在实际条件下很容易出现高阶效应。     

高速太赫兹探测器

太赫兹(terahertz,THz)技术在高速空间通信、外差探测、生物医学、无损检测和国家安全等领域具有广阔的应用前景.能响应1 GHz调制速率以上THz光的高速THz探测器是快速成像、THz高速空间通信、超快光谱学应用技术和THz外差探测等领域的核心器件.传统的THz热探测器难以实现高速工作,而基于半导体的THz探测器在理论上可实现高速工作.光导天线具有超快的响应速度,可实现常温和宽谱探测;肖特基势垒二极管混频器、超导-绝缘体-超导混频器和超导热电子混频器具有转换效率高、噪声低等优点,可用于高速THz空间外差和直接探测;基于高迁移率二维电子气的天线耦合场效应晶体管灵敏度高、阻抗低,可实现常温高速THz探测;THz量子阱探测器是一种基于子带间跃迁原理的单极器件,非常适合高频和高速探测应用,亚波长金属微腔耦合机理可显著提高器件的工作温度及光子吸收效率.本文对上述几种高速THz探测器进行了综述并分析了各种探测器的优缺点.     

激光诱导和化学镀铜制备太赫兹偏振器和滤波器

利用激光诱导与化学镀铜的方法在聚酰亚胺薄膜上制备了太赫兹线栅偏振器和带阻滤波器,用太赫兹时域光谱系统对所制备的器件进行了测试。测试结果表明,该方法制备的太赫兹线栅偏振器在0.2～1.5 THz范围内的消光比优于20 dB,耶路撒冷十字结构带阻滤波器的3个中心频率分别为0.41、1.07、1.47 THz。实验结果与时域有限差分法的仿真结果基本相符。研究表明激光诱导与化学镀铜是一种简单灵活且能有效地制备太赫兹器件的方法。     

基于科赫曲线分形结构太赫兹带通滤波器

太赫兹滤波器是太赫兹通信、太赫兹成像和太赫兹检测等太赫兹应用系统中不可或缺的功能器件。按照不同的分类方式,滤波器有不同的种类,常见的按照选频功能可分为高通滤波器、低通滤波器、带阻滤波器和带通滤波器。为了实现在太赫兹波段的滤波效果,世界各地的研究人员利用不同的结构、材料和控制方式实现了功能各异的太赫兹滤波器,但是考虑到设计的器件要应用到太赫兹系统中,成本低廉、结构简单、性能优越的太赫兹滤波器一直是研究人员的追求。分形概念自提出以来在很多研究领域都有了快速发展,但是在太赫兹波段的应用还不是很常见,特别是应用于太赫兹功能器件的设计。引入分形中科赫曲线的概念设计并制备了一种新型的太赫兹带通滤波器,该滤波器是在金属薄膜上刻蚀出科赫曲线分形结构,当太赫兹波垂直入射到该滤波器时候实现了在太赫兹波段的窄带滤波。在滤波器的设计过程中,追求理论与实验相结合,首先在电磁仿真软件中建立科赫曲线分形结构滤波器模型进行计算,探究分形结构应用于太赫兹波段进行滤波的可行性,在进行多次计算之后得到优化后的尺寸和结构,然后根据优化后的尺寸加工出科赫曲线分形结构太赫兹滤波器样品,并且将样品放在太赫兹时域光谱系统中进行实验测量,得到实验数据后与仿真结果进行比较。在仿真中利用了时域有限差分法模拟科赫曲线分形结构太赫兹带通滤波器的传输特性,优化后的仿真结果表明:滤波器的谐振频率为0.715 THz,透射系数能够达到0.92,-3 dB带宽为21.9 GHz,将仿真得到的散射参数进行S参数反演得到了太赫兹滤波器样品的电磁参数,这在理论上分析了太赫兹波在谐振点处产生透射增强的原因。利用飞秒激光微加工系统制备了尺寸优化后的科赫曲线分形结构太赫兹带通滤波器样品,然后使用太赫兹时域光谱系统对样品的传输特性进行测试,对实验得到的时域数据进行快速傅里叶变换之后得到频域数据,再把频域数据进行归一化处理后与之前的电磁仿真结果进行对比,发现实验测得的结果与电磁软件仿真得到的结果较为吻合。     

0.34 THz无线通信收发前端

描述了一种基于肖特基二极管技术的0.34 THz无线通信收发前端。该前端采用超外差结构,由0.34 THz谐波混频器、0.17 THz本振8倍频链和偏置电路组成。0.34 THz谐波混频器基于反向并联肖特基二极管,可以实现信号的上变频发射和下变频低噪声检测。0.17 THz本振8倍频链由三级二倍频及驱动放大链路组成,可将20~22.5 GHz信号倍频至0.16~0.18 THz,为混频器提供5~10 dBm左右的本振信号。实验测试结果表明:该前端用于信号发射时,在0.34 THz频点的饱和输出功率为-14.58 dBm;用于信号检测时,最低单边带(SSB)变频损耗为10.0 dB,3 dB中频带宽约30 GHz。限于测试条件,未能测试前端接收噪声温度,仿真得到的双边带噪声温度数值低于1000 K。在该前端基础上,完成了首次基于16QAM 数字调制体制的0.34 THz无线通信实验,传输速率达3 Gb/s。     

基于纳米印刷技术的双螺旋太赫兹可调超表面

由人工构造超表面所制成的电磁器件能够实现太赫兹频段的滤波、调控、传感、探测等功能,对太赫兹波在通信、成像领域的应用至关重要.基于纳米印刷技术设计制备了一种柔性透明双螺旋超表面,并利用该超表面构建了一款太赫兹旋转可调滤波器,通过旋转超表面实现太赫兹波透射率的有规律调谐.在旋转90°后,0.52 THz处的透射率由8%增至67%,而0.92 THz处的透射率由68%降至3%,实现调制深度大于88%的主动调控.并且,所提出的纳米印刷超表面具有超薄、柔性、可见光透明的优良性质,有利于太赫兹可调器件的小型化、轻量化及大面积制备.     

0.8 THz再生反馈振荡器的仿真模拟研究

随着太赫兹技术的发展,高频率、大功率的太赫兹辐射源一直是国内外研究的热点。再生反馈振荡器作为一种新型太赫兹源器件,具有可行性高、功率大的优点。基于0.8 THz太赫兹波成像系统的需求,采用折叠波导慢波结构,对再生反馈振荡器进行设计与研究。首先对0.8 THz折叠波导慢波结构进行设计并使用CST微波工作室中的本征模求解器进行参数优化,再通过CST粒子工作室中的PIC仿真模块对整管进行热特性仿真,验证了方案的可行性,仿真结果显示,最终可产生60 mW的稳定输出信号。     

利用3D打印技术制备太赫兹器件

高性能的太赫兹器件在控制太赫兹波方面起到重要的作用,因此寻求一种简单有效的太赫兹器件加工方案非常必要。本文以太赫兹波导和太赫兹滤波器为例,分别选用Kagome型光子晶体结构的波导和一维光子晶体结构的滤波器,运用商用的3D打印机加工样品,并采用透射式太赫兹时域光谱系统对样品的参数进行测量。实验结果表明:加工的波导在0.2~1.0 THz范围内传输损耗平均值约为0.02 cm~(-1),最小值可达到0.002 cm~(-1),且可运用机械拼接的方式将多个波导进行简单的连接从而获得更长的波导而不引起严重的损耗;滤波器的透射谱在0.1~0.5 THz之间有两个明显高损耗带;这两组实验结果均与理论预计非常接近。本文运用太赫兹波导和滤波器的实例证实了3D打印技术加工太赫兹器件的可行性,将会成为获取性能可控、价格低廉的太赫兹器件的有效途径。     

基于二氧化钒的可调谐太赫兹宽带带通滤波器

提出了一种基于二氧化钒超材料的可调谐宽带带通滤波器.仿真结果表明:该滤波器在中心频率5.19 THz处的3 dB带宽为1.71 THz,最高传输率能够达到0.77,并且在入射角0°～40°范围内具有稳定的宽带传输性能.运用谐振频率处的表面电流分布和等效电路法,阐述了其实现宽带传输的物理机制.由于二氧化钒独特的相变特性,通过改变二氧化钒的电导率,滤波器的带宽可以从1.71 THz动态调谐至2.31 THz.该滤波器具有结构设计简单、宽通带以及可调谐等特性,有望在宽带太赫兹通信、传感以及其他新兴的太赫兹领域发挥重要的作用.     

GaAs Schottky devices for submillimeter wavelengths

Conclusion The above analyses assume the absence of excess noise in the Schottky barrier mixer diode. Achievement of such a condition is dependent not only on the absence of interfacial stress in the device structure, but also on device surface properties. Reduction of excess noise caused by these two mechanisms is discussed by Sherrill, et al.,⁽¹⁰⁾ and Kattman, et al.⁽¹¹⁾ Minimum conversion loss in the THz range occurs for mixer diode with the smallest possible junction capacitance. This capacitance can be reduced along with the R_s, C_j(0) product by decreasing the device area and increasing the active layer impurity concentration. It was shown above that this impurity concentration increase will (a) permit higher frequency of operation, (b) cause a lower intrinsic conversion loss, and (c) be responsible for an increase in mixer diode I–V slope parameter, V₀. The only potentially negative effect comes from (c), but the analysis reviewed in the last section shows that an increase in V₀ has a minimal effect on mixer noise temperature for terahertz range operation. Experimental results of Dr. H. P. Röser⁽¹²⁾ to frequencies as high as 2.5 THz are in agreement with these predictions.It is thus concluded on the basis of the above four analyses of device mixer noise temperature and conversion loss that reasonable Schottky barrier mixer diode operation can be expected to at least 10 THz.This work was supported in part by the National Science Foundation under Grant ECS-8412477     

Fabrication and analysis of GaAs Schottky barrier diodes fabricated on thin membranes for terahertz applications

The GaAs Schottky diode is predominantly used as the critical mixer element in heterodyne receivers in the frequency range from 300 GHz to several THz[1]. At operating frequencies above one THz the skin effect adds significant parasitic resistance to the diode which degrades the receiver sensitivity. A novel diode structure called the Schottky barrier membrane diode is proposed to decrease the skin effect resistance by reducing the current path between the Schottky and ohmic contacts. This is accomplished by fabricating the diode on a very thin membrane of GaAs (about 1 m thickness). A theoretical analysis has shown that this will reduce the substrate resistance by 60% at 3 THz. This reduction in resistance corresponds to a better frequency response which will improve the device's performance as a mixer element.This work has been supported by a grant from Texas Instruments and the National Science Foundation under contract ECS-8412477     

Measurement and study of the embedding impedance presented by the whisker antenna of a schottky diode corner cube mixer

A 250× scale model of a Schottky diode corner cube mixer designed for operation in the terahertz region has been built and tested. It has been successfully used to measure the embedding impedance presented to the diode at the whisker tip and also determine the impedance of the whisker antenna itself. The results have been input into a computer analysis to determine as to how the performance may be improved. With regards to improving the physical ruggedness of such mixers, a simple equivalent whisker structure has been determined and a new technique that may be used to fabricate a space qualifiable corner cube mixer intended for terahertz operation is disclosed.     

Design and fabrication of 0.5 micron GaAs Schottky barrier diodes for low-noise terahertz receiver applications

Recent technological advances have made possible the development of heterodyne receivers with high sensitivity and high spectral resolution for frequencies in the range 1,000–3,000 GHz (1–3 THz). These receivers rely on GaAs Schottky barrier mixer diodes to translate the high-frequency signal to a lower frequency where amplification and signal processing are possible. At these frequencies, the diode quality is a major limitation to the performance of the receiver. The design, fabrication and DC evaluation of a diode for this frequency range is presented. A figure-of-merit cut-off frequency of over 10 THz is achieved with a record low zero biased capacitance of 0.5 fF. Results from RF tests are also given.This work has been supported in part by the National Science Foundation under contract ECS-8720850 and the US Army.     

Development of terahertz mixers and a study of their characteristics

We develop terahertz mixers with monolithic integrated circuits containing balanced, series and antiparallel pairs of Schottky diodes. The designs of these mixers and a method for studying their parameters are described. The best results are obtained for the antiparallel diode pair. In this case, the double-sideband noise temperature of the receiver amounts to 5600–7500 K when operating at the second heterodyne-oscillator harmonic near the frequency 0.71 THz.     

NOVEL TERAHERTZ PHOTOCONDUCTIVE ANTENNAS

The photoconductive (PC) antenna is a key device for the recent terahertz (THz) photonics based on laser-pumped generation and detection of THz radiation. In this paper we report on two new types of PC antennas: the Schottky PC antenna and the multi-contacts PC antenna. The former one is able to detect THz radiation intensity without the time-delay scan and useful for applications where spectroscopic information is not important, such as the THz intensity imaging. The latter one is useful for the polarization sensitive THz spectroscopy, such as the THz ellipsometry. The characteristic features of these new types of PC antennas are studied by using a THz time-domain spectroscopy system.