Contribution of quantum corrections and superconducting fluctuations to the magnetic field and temperature dependence of the conductivity in amorphous CuTi and CuZr alloys

We report conductivity measurements on Cu _x Ti_100–x and Cu _x Zr_100–x glasses as a function of magnetic field (0B6T) and temperature (1.5–5. At low temperatures the measured conductivity(T,B)= ₀+(T)+(B,T) is compared quantitatively with the predictions of diagrammatic perturbation theories including quantum interference effects, spin-orbit scattering and electron-electron interaction. We obtain a set of characteristic fields for inelastic and spin orbit scattering from both the magnetic field and the temperature dependence of the measured (T, B). Below about 4K the Coulomb interaction determines (T) in consistence with the Hall effect, whereas quantum interference processes and spin-orbit scattering dominate the magnetic field dependence. In case of Cu _x Zr_100–x , (B, T) can be explained by taking into account superconducting fluctuations (Maki-Thompson and Aslamasov-Larkin parts) in addition. Superconducting fluctuations dominate the temperature dependence as well. For high magnetic fields and lower temperatures (B/T>1T/K) we find discrepancies between experiment and calculations from perturbation theory.     

Resistance to dislocation motion in copper-based solid solutions with a statistically disordered atomic distribution

The stress _F due to friction forces in copper-based solid solutions was determined. Under the conditions of the procedure used to measure _F, on the basis of the half-wave hysteresis with polycrystalline samples, the value of d: _F = _F0 + K_Fd^–(1/2) where _F0 is the resistance to dislocation motion in an alloy having an infinite grain size, and K_F is a constant. It is shown that _F0 is governed by the interaction of moving dislocations with impurity atoms in the case of a statistically disordered atomic distribution. A study was made of the effects of various factors on _F and of the nature of the changes in _F0 caused by alloying.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No.3, pp. 18–23, March, 1971.     

The metal-semiconductor transition in amorphous Si1−x Cr x films:T 0.19-contribution to the metallic conductivity

A detailed phenomenological re-analysis of previously published conductivity data, (T, x), is presented. It is based on the investigation of differences, (T, x ₁)–(T, x ₂). In this way, the cusp-like low-temperature term is amplified against the other temperature dependent contributions. This term can be described by wherep=0.19±0.03. It is present, if (4.2 K,x) exceeds 260 ^–1 cm^–1, at least up to (4.2 K,x)1350 ^–1 cm^–1 and forT60 K. But it is absent, if (4.2 K,x)180 ^–1 cm^–1. The disappearance of this contribution should be related to the metal-semiconductor transition, taking place atx _c 0.14. On the other hand, the presence of a term proportional toT ^1/2, as predicted by Altshuler and Aronov, seems unlikely.It is argued that the term should be related to the interplay of electron-electron interaction and disorder. The comparison with data from the literature shows that this contribution might also be present in heavily doped crystalline semiconductors.     

Frictional forces and resistance to the beginning of plastic deformation in Cu-Al solid solutions

Extension curves have been obtained for Cu-Al solid solutions in the microdeformation range 10^–6-10^–3. It is shown that the dependence of the resistance to microdeformation on the degree of this deformation is described by = ₀ ⁰ + A^1/2, where ₀ ⁰ is the resistance to the beginning of plastic deformation, and A = const. The stresses _F due to frictional forces are determined from the unloading curves. The dependences of ₀ ⁰ and _F on the Al concentration c in the alloy are studied. The ₀ ⁰ = f(c) and F = (c) dependences are analyzed in the light of current ideas regarding the nature of impurity strengthening. The grain size is shown to affect the resistance to microdeformation in Cu-Al alloys.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, Vol. 12, No. 5, pp. 94–103, May, 1969.     

Charged surfaces and the analyticity properties of the string tension in lattice gauge theories

A method to prove the fact that the string tension in strongly coupled lattice gauge theories is of the form =–log +, where is an analytic function of the inverse coupling =1/g², is presented. Its relation to random surface methods, in particular to the work of Debrushin and Holický, Kotecký, and Zahradník, is discussed.This paper is based on a talk presented at the conference on Statistical Mechanics of Phase Transitions—Mathematical and Physical Aspects, Trebon, September 1–6, 1986.     

Observation of variable range hopping at “natural” phonon frequencies

Hill's analysis of hopping conductivity data has been applied to ion-bombarded amorphous-silicon samples. The apparent hopping conductivity parameters derived from a standardT ^–0.25 plot undergo changes by several orders of magnitude when plotted with the exact scaling of the abscissa. A typical example is characterized by a temperature dependence ofdc conductivity according to= ₀ exp (—(T ₀/T) ^m ), withm=0.45,T ₀ =6.410⁴K and ₀=6.610^{1 –1} cm^–1. From ₀ a phonon frequency of about 3–1510¹² s^–1 is derived.     

Dielectric properties of thin films of chalcogenide glasses

The temperature-frequency dependences of the conductivity (), capacitance (C), and dielectric-loss coefficient () have been measured for metalglass film (composition As₃₀Ge₁₀Si₁₂Te₄₈)-metal structures in an alternating electric field. The glass film was obtained by the method of radiofrequency sputtering in an argon atmosphere, and the top and bottom molybdenum electrodes by thermal evaporation in vacuum. The measurements were made in the frequency range 4·10²–2·10⁴ Hz at temperatures 209–299°K. The relaxation component _r=–_– of the conductivity for T < 240°K and high frequencies does not depend on the temperature (T) and is proportional to ^0.8. At higher temperatures, _r() is described by a complicated curve, which has at low frequencies the behavior ² and goes over to saturation at large values of . In this range of frequencies and for positive temperatures _r exp(E/T), where E 0.45 eV. The frequency-temperature dependences of _r, C, and ' are interpreted on the basis of Fröhlich's model. The calculated and experimental curves are compared. It is assumed that the loss of relaxation type is due to two processes, one of which is governed by carrier hops between localized states near the Fermi level and is predominant at low temperatures. The other is determined by carrier hops between the same states through the valence band and is predominant at positive temperatures.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 35–39, September, 1980.     

The effect of grain size on the deformation resistance of nickel

The effect of the grain sizel of commerical nickel on the lower yield point, _y, and flow stress, _f , has been investigated. From the relationship between _y andl ^–1/2 and between _f andl ^–1/2, and also by extrapolation, the parameters ₁( _i ^f ) and k_y(kf), which occur in Petch's well-known expression, were determined. It was found that the values of these parameters depend on the previous history of the samples. It is suggested that the more marked dependence of the deformation resistance of nickel on grain size arising from certain thermal treatments is due to the segregation of impurities to the grain boundaries. It is shown that this is in accord with the presence of grain-boundary hardening and with its dependence on quenching temperature.     

Some physical properties of Sn-P-S(Se) glasses

Investigations of the Sn-P-S(Se) glass system were conducted. It was found that the chalcogenide glass Sn₇P_9.3Se_83.7 is transparent for 0.87–19.1 m wavelengths. Anomalies in the conductivity (T), the dielectric permeability (T), the loss tangent tan (T), and the energy gap E _g (T) were observed for freshly prepared samples at T= 260–320 K which, apparently, are related to the ferroelectric state in the chalcogenide glass. For annealed (2 h at T = 373 K) samples, smooth temperature dependences for , , tan are characteristic.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 81–84, January, 1991.     

Nonperturbative corrections to the cross section ratio R=σL/σT for deep-inelastic scattering

The contribution of nonperturbative corrections, proportional to the quark and gluon vacuum condensates, to the ratio R=_L/_T, where _L and _T are the cross sections for longitudinal and transversal photon scattering by nucleons, is calculated. It is shown that these condensate corrections amount to 30% in the range 0.1相似文献   

ArF laser CVD of hydrogenated amorphous silicon: The role of buffer gases

ArF laser-induced CVD has been employed to generate hydrogenated amorphous silicon (a-Si:H) from Si₂H₆ gas dilute with He, Ar, or H₂. The formation of amorphous films or powder is found to depend critically on the kind of buffer gas, the stationary total and partial gas pressures, and the substrate temperature. These dependences have been investigated in the 1–5 Torr pressure and 100–400 °C temperature ranges. They are semiquantitatively discussed in terms of ArF laser photolysis of disilane, gas heating by heat flow from the substrate and laser irradiation, diffusion, and gas phase polymerization. Furthermore, photo ionization has been observed but found irrelevant for the a-Si:H layer properties. The photo and dark conductivities ( _ph, _d) of the semiconductor layers are determined by the substrate temperature. The _ph values range between 10^–7 and 10^{–4 –1} cm^–1 and the _d values between 10^–11 and 10^{–8 –1} cm^–1. The maximum ratio _ph/ _d amounts to 4×10⁴. The layers are further characterized by their optical band gap and activation energy. The layer properties are compared to literature values of amorphous films prepared by various photo, HOMO, and plasma CVD methods.     

Insensitivity of Quantized Hall Conductance to Disorder and Interactions

A two-dimensional quantum Hall system is studied for a wide class of potentials including single-body random potentials and repulsive electron–electron interactions. We assume that there exists a nonzero excitation gap above the ground state(s), and then the conductance is derived from the linear perturbation theory with a sufficiently weak electric field. Under these two assumptions, we prove that the Hall conductance _xy and the diagonal conductance _yy satisfy | _xy+e ² /h|const·L ^–1/2 and | _yy|const·L ^–1/12. Here e ²/h is the universal conductance with the charge –e of the electron and the Planck constant h; is the filling factor of the Landau level; and L is the linear dimension of the system. In the thermodynamic limit, our results show _xy=–e ² /h and _yy=0. The former implies that integral and fractional filling factors with a gap lead to, respectively, integral and fractional quantizations of the Hall conductance.     

Temperature dependence of resistance to micro- and macrodeformation in precipitation-hardening Co-Ni-Ti and Co-Ni-Ti-Al alloys. II

The temperature dependence of mechanical properties (T) in the region of micro- and macroformations ( - 10^–6-10^–3) of the Co-Ni-Ti, and Co-Ni-Ti-Al alloys was studied in various structural states. It was shown that precipitation of Co³Ti phase in the alloy being investigated does not determine the anomalous temperature dependence (T) similar to that observed in various alloys with precipitation of Ni₃Al phase. Experimental data obtained indicated that temperature dependence of macroscopic yield point is determined by the dependence of the resistance to the onset of plastic flow on temperature.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 52–57, September, 1972.     

Spin-orbit coupling in the chlorobenzene molecule

The possible ways of drawing of the intensity of the S₀ T* transition in the chlorobenzene molecule are investigated. The effective spin-orbit coupling of either S* or S* states with the T* state leads to the out-of-plane polarized component of phosphorescence in the chlorobenzene. The in-plane polarized component cannot be explained by the mechanism under consideration — by drawing of intensity of the S₀ S₀* transitions through spin-orbit coupling of first order.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 134–138, August, 1974.     

Electrical properties (dc and ac) of vanadium-borate glass

The results of an investigation into the temperature and frequency dependence of the electrical conductivity [dc and ac (10²–10⁵ Hz)] of glass of the composition 35% B₂O₃-15% CaO-20% V₂O₄-30% V₂O₅ (weight %) are discussed. The resistivity of the glass at T=300°K is =1.2·10¹¹ ·cm. The activation energy of the dc conductivity is E=(0.652±0.004) eV and equal to E for ₂ at high temperatures. The temperature-frequency dependences of the polarization component _p, the dielectric loss coefficient, and the permittivity are explained on the basis of the Fröhlich model proposed for uncoupled relaxation oscillators for which the heights of the potential barriers are uniformly distributed in some range of energies.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika. No. 3, pp. 35–38, March, 1981.     

Interchangeability and bounds on the effective conductivity of the square lattice

The effective conductivity ^* of an infinitely interchangeable two-component random medium is considered. This class of media includes cell materials in the continuum and the bond lattice on ^d , where the cells or bonds are randomly assigned the conductivities ₁ and ₂ ( ₁, ₂ne0) with probabilitiesp ₁ andp ₂=1–p ₁. A rigorous basis for the very old and widely used low volume fraction expansion of ^* is established, by proving that ^* is an analytic function ofp ₂ in a suitable domain containing [0, 1]. In the case of the bond lattice ind=2, rigorous fourth-order upper and lower bounds on ^* valid for allp ₂, ₁, and ₂ are derived. The four perturbation coefficients entering into the bounds are obtained from the first-order volume fraction coefficient using the method of infinite interchangeability.     

Photoabsorption of BCl3 Gas under pulsed ArF excimer laser irradiation

The gas immersion laser doping (GILD) technique requires the measurement of the fraction of incident light absorbed in the gas phase during the irradiation with a pulsed laser. Here we report the absorption of boron trichloride (BCl₃) gas at the wavelength of a pulsed ArF excimer laser (=193 nm). We have determined the one-photon (₁) and two-photon () absorption cross sections of this dopant gas for 193 nm. The values of ₁ and are 3.6×10^–20 cm² and 9×10^–45 cm⁴·s, respectively. However, the distinction between simultaneous and sequential absorption has not been possible. Based on these results, we have established a relationship which allows the calculation of the fraction of incident light absorbed as a function of incident intensity and gas pressure.     

Vacuum Einstein spaces with axial symmetry

Four classes of solutions are found to the equations R=–2_{; ;} and g _;=0 in three-dimensional space with metric gdxdx and signature (+ ––), equivalent to the Einstein equations R_ij=0 in a vacuum for the metric . The metric ds² assumes axial symmetry and symmetry with respect to the reflection .Translated from Izvestiya Uchebnykh Zavedenii, Fizika, No. 9, pp. 43–45, September, 1976.     

Current pattern of plastic deformation stages

A review of current concepts of strain hardening stages in metallic materials upon active deformation is presented. By now, five stages of the stress () — strain () dependence reliably have been identified. These stages differ by the strain hardening coefficient = d/d. There are also some data on stage VI. In the paper, the role of substructural transformations in the change of strain hardening stages is discussed, the factors complicating the deformation stage pattern are analyzed, and the effect of grain size on stages of strain hardening is examined.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 90–98, August, 2004.     

Iteration wave function for describing the (e, 2e) spectrum of the helium atom

The wave function of the ground state of the helium atom is derived by the variational-iteration technique with the Hylleraas-Eckart momentum representation of the wave function as a first approximation. This function is used to calculate the ratios of the differential cross sections (n=2)/(n=1) and (2p)/(2s) for helium ionized by an electron impact. The calculation is conducted in the plane-wave impulse approximation for symmetric noncoplanar kinematics of the (e, 2e) process. The results are compared with previous calculations in which variational wave functions of the configurational interaction type were used. Good agreement with the existing experimental data for (n=2)/(n=1) is obtained. The results are generalized to helium ions.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 45–50, December, 1986.