Monochromatic soft X-ray-induced reactions of CCl2F2 adsorbed on Si(111)-7 × 7 near the Si(2p) edge

Continuous-time photoelectron spectroscopy (PES) and continuous-time core-level photon-stimulated desorption (PSD) spectroscopy were used to study the monochromatic soft X-ray-induced reactions of CCl₂F₂ molecules adsorbed on Si(111)-7 × 7 at 30 K (CCl₂F₂ dose = 2.0 × 10¹⁴ molecules/cm², ~ 0.75 monolayer) near the Si(2p) core level. Evolution of adsorbed CCl₂F₂ molecules was monitored by using continuous-time photoelectron spectroscopy at two photon energies of 98 and 120 eV to deduce the photolysis cross section as a function of energy. It was found that the photolysis cross sections for 98 and 120 eV photons are _~1.4 × 10^? 18 and ~ 8.0 × 10^? 18 cm², respectively. Sequential F⁺ PSD spectra obtained by using continuous-time core-level photon-stimulated desorption spectroscopy in the photon energy range of 98–110 eV show the variation of their shapes with photon exposure and depict the formation of surface SiF species. The dissociation of CCl₂F₂ molecules adsorbed on Si(111)-7 × 7, irradiated by monochromatic soft X-ray in the photon energy range of 98–110 eV, is mainly due to dissociative electron attachment and indirect dipolar dissociation induced by photoelectrons emitted from the silicon surface.     

Exciton-polariton state in nanocrystalline SiC films

We studied the features of optical absorption in the films of nanocrystalline SiC (nc-SiC) obtained on the sapphire substrates by the method of direct ion deposition. The optical absorption spectra of the films with a thickness less than ~500 nm contain a maximum which position and intensity depend on the structure and thickness of the nc-SiC films. The most intense peak at 2.36 eV is observed in the nc-SiC film with predominant 3C-SiC polytype structure and a thickness of 392 nm. Proposed is a resonance absorption model based on excitation of exciton polaritons in a microcavity. In the latter, under the conditions of resonance, there occurs strong interaction between photon modes of light with λ_ph=521 nm and exciton of the 3С polytype with an excitation energy of 2.36 eV that results in the formation of polariton. A mismatch of the frequencies of photon modes of the cavity and exciton explains the dependence of the maximum of the optical absorption on the film thickness.     

New probing techniques of radiative shocks

Radiative shock waves propagating in xenon at a low pressure have been produced using 60 joules of iodine laser (λ = 1.315 μm) at PALS center. The shocks have been probed by XUV imaging using a Zn X-raylaser (λ = 21 nm) generated with a 20-ns delay after the shock creating pulse. Auxiliary high-speed silicon diodes allowed performing space- and time-resolved measurement of plasma self-emission in the visible and XUV. The results show the generation of a shock wave propagating at 60 km/s preceded by a radiative precursor. This demonstrates the feasibility of radiative shock generation using high power infrared lasers and the use of XRL backlighting as a suitable diagnostic for shock imaging.     

Grain size of nanocrystalline YSZ buffer layers fabricated by ion beam deposition

Amorphous or nanocrystalline thin films are capable to be efficient diffusion barrier layers for YBCO coated conductors of ion beam assisted deposition route. Nanocrystalline Yttria-Stabilized Zirconia (YSZ) buffer layers were fabricated by the ion beam deposition. Kr and Ar gases were utilized for the dual Kaufman type sputtering ion sources sequently. Both of the ion beams were fixed at 200 mA, while the ion energy was in the range of 450–2000 eV. The thickness of the YSZ buffer layers was several hundreds of nanometers. The grain size of YSZ thin films, which varied from 2 to 20 nm, was calculated by Scherrer Formulation based on the X-ray diffraction measurement results. The grain size always decreased at first and then increased when the ion energy was increased. In the cases Kr gas was utilized and Ar gas was utilized, the grain size reached its minimum value at the ion energy of about 1800 eV and 1000 eV, respectively. Such phenomenon was discussed using the thermodynamic theory of thin film nucleation. Deposition rate and substrate temperature were the two chief variables of the critical nuclei concentration and grain size.     

Optical absorption and dispersion characterizations of CuGaSe2 thin films prepared by flash evaporation technique

Thin films of CuGaSe₂ have been prepared by flash evaporation technique. The optical properties of the prepared films were investigated using spectrophotometric measurements of the transmittance and reflectance at normal incidence of light in the wavelength range from 400 to 2500 nm. The optical constants as refractive index, n, and absorption index, k, were calculated and found to be independent of film thickness in the range of the film thickness 132–423 nm. The analysis of the photon energy against the absorption coefficient showed three direct optical transitions (one of them is allowed while the others are forbidden). This direct transition was ascribed to the crystal field and spin orbital splitting of the upper most valence band. The crystal field and spin orbital splitting of CuGaSe₂ were found to be ? 0.15 eV and 0.45 eV, respectively. The dispersion of the refractive index is discussed in terms of the single oscillator Wemple–DiDomenico (WD) model. The single oscillator energy (E_o), the dispersion energy (E_d), the high frequency dielectric constant (ε_∞), the lattice dielectric constant (ε_L) and the ratio of free charge carrier concentration to the effective mass (N / m*) were estimated. The capacitance–voltage measurements of CuGaSe₂/p-Si heterojunction showed that the diode is abrupt junction diode. The carrier concentration and the built-in voltage were estimated. The current–voltage characteristics of the device under illumination were investigated and photovoltaic properties of the device were evaluated.     

Near-infrared photoluminescence and thermally stimulated current in Cu3Ga5Se9 layered crystals: A comparative study

Near-infrared photoluminescence (PL) and thermally stimulated current (TSC) spectra of Cu₃Ga₅Se₉ layered crystals grown by Bridgman method have been studied in the photon energy region of 1.35–1.46 eV and the temperature range of 15–115 K (PL) and 10–170 K (TSC). An infrared PL band centered at 1.42 eV was revealed at T = 15 K. Radiative transitions from shallow donor level placed at 20 meV to moderately deep acceptor level at 310 meV were suggested to be the reason of the observed PL band. TSC curve of Cu₃Ga₅Se₉ crystal exhibited one broad peak at nearly 88 K. The thermal activation energy of traps was found to be 22 meV. An energy level diagram demonstrating the transitions in the crystal band gap was plotted taking account of results of PL and TSC experiments conducted below room temperature.     

Characterization of luminescent chromophore obtained from silica spheres

Blue light emitting chromophores have been separated from silica spheres by soaking them into acetone for 120 days. The luminescent chromophores were not obtained from other solvents, including ether, methanol, ethanol, 2-propanol, chloroform and tetrahydrofuran. According to the Fourier transform infrared spectrum, the luminescent material is composed of C–OH, –CH₂, –CH₃, C=O, and Si–O–Si. UV–visible absorption peak of the chromophore is at 5.17 eV (240 nm). Field emission scanning electron microscope images show small cracks on the surface of aged spheres. The luminescence peak was at 2.81 eV (441 nm) for excitation energy between 3.88 and 3.35 eV and slightly shifted toward lower energy for excitation energy lower than 3.35 eV. The deconvoluted luminescent spectrum shows two emission bands at 3.08 and 2.74 eV, which are well-matched the oxygen deficient center model. Compared to the absorption peak (5.17 eV) and the emission peak (2.81 eV), large Stokes shift (2.36 eV) is observed.     

Radio frequency source power-induced ion energy impact on SiN films deposited by using a pulsed-PECVD in SiH4–N2 plasma at room temperature

Using a radio frequency (rf) pulsed-plasma enhanced chemical vapor deposition system, silicon nitride (SiN) films were deposited in a SiH₄–N₂ inductively coupled plasma. Effect of duty ratio and rf source powers on deposition rate at room temperature were investigated in the ranges 50–90% and 600–900 W, respectively. Plasma diagnostics on ion energy was conducted and rf source power-induced ion energy impact on SiN films were studied as well as some correlations between deposition rate and ion energy. High and low energies ranged from 17.8 to 22.6 eV, and from 23.6 to 33.8 eV, respectively. Higher ion energies observed at lower duty ratios or lower rf powers was attributed to a lower plasma density. Ion energy flux variation was opposite to that for ion energy. Meanwhile, the deposition rate increased with decreasing the duty ratio at all powers but 900 W. This was not clear as a function of rf source power. The deposition rate ranged from 17.0 to 26.5 nm/min.     

Characterisation of the bremsstrahlung generated by a 450 MeV superconducting electron linac using the inverse calculation method based on a genetic algorithm

The bremsstrahlung energy spectrum generated by the 450 MeV electron linac driving the vacuum ultra violet free electron laser FLASH (free electron laser in Hamburg) operated by DESY was measured with TLD-700 detectors and unfolded using a technique based on a genetic algorithm. The half (1/2), one-fourth (1/4) and tenth (1/10) value layer thickness of lead were estimated to be 1.0, 4.0 and 20 mm, respectively. The peak and average photon energy were calculated from the unfolded bremsstrahlung spectrum and found to be 0.5 and 0.8 MeV, respectively.     

Photoacoustic spectroscopy analysis of silicon crystals

A high resolution fully automated photoacoustic spectrometer (PAS) of the gas-microphone type is used in the photon energy region 0.8–1.6 eV to analyze the optical properties of silicon single crystals at different frequencies between 25 and 312 Hz. At modulating frequencies at which the sample thickness approaches its thermal diffusion length, the results obtained of untreated specimens using different PA cells reveal the presence of several peaks in the absorption tail, some of which are independent of the photon energy. The magnitude of these peaks is seen to be stronger than that of the maximum of the fundamental edge of silicon, thus making it indistinct. At lower modulating frequencies at which the sample thickness is far less than its thermal diffusion length and using a highly reflecting backing material, multiple reflections of the light beam within the sample interfaces are seen to enhance the PA amplitude signal sensitivity response as predicted theoretically. The effect of etching silicon samples in a diluted solution of hydrofluoric acid (5%) on photoacoustic spectra has been investigated. It is observed that this process removes all spurious features in the spectra originating from the surface contaminants making the fundamental absorption edge clearly visible and leaving only one distinct peak at hν=0.9 eV. Transmission-photoacoustic (T-PAS) has also been used to study silicon single crystals. In the light of recent literature a comparison is carried out between the results obtained using the two techniques in determining the absorption coefficient and the gap energy.     

Electronic excitations and luminescence of SrAlF5 crystals doped with Ce3+ ions

This paper reports the results of a time-resolved photoluminescence and energy transfer processes study in Ce³⁺ doped SrAlF₅ single crystals. Several Ce³⁺ centers emitting near 4 eV due to 5d-4f transitions of Ce³⁺ ions substituting for Sr²⁺ in non-equivalent lattice sites were identified. The lifetime of these transitions is in the range of 25–35 ns under intra-center excitation in the energy region of 4–7 eV at T = 10 K. An effective energy transfer from lattice defects to dopant ions was revealed in the – 7–11 eV energy range. Both direct and indirect excitation channels are efficient at room temperature. Excitons bound to dopants are revealed at T = 10 K under excitation in the fundamental absorption region above 11 eV, as well as radiative decay of self-trapped excitons resulting in luminescence near 3 eV.     

A spectroscopic ellipsometry study of TiO2 thin films prepared by ion-assisted electron-beam evaporation

Film characterization based on variable-angle spectroscopic ellipsometry (VASE) is desirable in order to understand physical and optical characteristics of thin films. A number of TiO₂ film samples were prepared by ion-assisted electron-beam evaporation with 200-nm nominal thickness, 2.0 Å/s deposition rate and 8 sccm oxygen flow rate. The samples were maintained at 250 °C during the deposition, and annealed in air atmosphere afterwards. As-deposited and annealed films were analyzed by VASE, spectrophotoscopy and X-ray diffractometry. From ellipsometry modeling process, the triple-layer physical model and the Cody–Lorentz dispersion model offer the best results. The as-deposited films are inhomogeneous, with luminous transmittance and band gap of 62.37% and 2.95 eV. The 300 °C and 500 °C are transition temperatures toward anatase and rutile phases, respectively. Increasing temperature results in an increase of refractive index, transmittance percentage and band gap energy. At 500 °C, the highest refractive index and band gap energy are obtained at 2.62 and 3.26 eV, respectively. The developed VASE-modeling process should be able to characterize other TiO₂ films, using similar physical and optical modeling considerations.     

XRD and XPS characterisation of transition metal silicide thin films

Binary transition metal silicides based on the systems Ti–Si, Fe–Si, Ni–Si and Cr–Si were fabricated on Si wafers by means of ion-beam co-sputter deposition and subsequent annealing. The crystalline structures of the phases formed were identified from the characteristic patterns acquired by means of X-ray diffraction (XRD) measurements. The phase formation sequences were described by means of the Pretorius' effective heat of formation (EHF) model. For the Ti–Si, Fe–Si and Ni–Si systems, single phase thin films of TiSi₂, β-FeSi₂ and NiSi₂ were generated as the model predicts, while a mixture of CrSi + CrSi₂ phases was obtained for the Cr–Si system. The surface chemical condition of individual specimens was analysed by using X-ray photoelectron spectroscopy (XPS). The chemical shifts of transition metal 2p_3/2 peaks from their metallic to silicide states were depicted by means of the Auger parameters and the Wagner plots. The positive chemical shift of 2.0 eV for Ni 2p_3/2 peak of NiSi₂ is mainly governed by the initial-state effects. For the other silicide specimens, the initial-state and final-state effects may oppose one another with similar impact. Consequently, smaller binding energy shifts of both negative and positive character are noted; a positive binding energy shift of 0.3 eV for the Fe 2p_3/2 level was shown for β-FeSi₂ and negative binding energy shifts of 0.1 and 0.3 eV were determined for CrSi + CrSi₂ and TiSi₂, respectively.     

Second harmonic response of the Si(111)7 × 7 surface

Optical second harmonic generation spectra have been experimentally obtained from a clean Si(111) 7 × 7 in two different polarization configurations isolating the rotational anisotropic and isotropic contributions. The energy of the fundamental photon is varied from 0.8 eV to 2.5 eV. For comparison, we also use a microscopic formulation based on the semi-empirical tight binding method to evaluate the nonlinear surface susceptibility tensor χ(2ω). Good agreement between theory and experiment is obtained with respect to the number of resonances, their position in energy, and surface or bulk character.     

Electronic core levels of hydroxyls at the surface of chromia related to their XPS O 1s signature: A DFT + U study

The Cr 2p and O 1s binding energy (BE) levels have been calculated by first principles methods for different models of hydroxylated (0001)-Cr₂O₃ surfaces. Several surface terminations have been considered. The calculations allow us to reproduce the O 1s shifts between O in oxide and OH groups. It is found that two main effects account for the OH binding energy shifts. On the one hand, the increased covalency of the O–H bond with respect to the Cr–O bond, lowers the electronic O (1s and 2p) energy, and in consequence the BE of the core levels (O 1s) are higher. On the other hand, the lower the OH coordination number, the higher the valence and core levels energy, and the lower the BE. Consequently, mono-coordinated hydroxyls have a binding energy near that of O^2? in the oxide (ΔBE_OH–O = ? 0.2–0.0 eV). Two-fold coordinated hydroxyls have a slightly higher BE (ΔBE_OH–O = + 0.3 eV). Three-fold coordinated OH groups have a higher binding energy (ΔBE_OH–O = + 0.6?0.7 eV), corresponding to that experimentally measured for OH groups. Finally, water adsorbed above OH groups exhibits a still higher BE (ΔBE_HOH–O = + 0.9–1.0 eV). The ΔBE are slightly under-estimated under the initial state approximation, and overestimated under the final state (Z + 1) approximation.     

Correlation between phosphorus concentration and opto-electrical properties of doped a-Si:H films

Phosphorus doped hydrogenated amorphous silicon (a-Si:H) films were prepared by decomposition of silane using RF plasma glow discharge. Both DC dark conductivity measurements, and spectrophotometric optical measurements through the range 200–3000 nm were recorded for the prepared films. The DC conductivity activation energy E_a decreased from 0.8 eV for the undoped sample to 0.34 eV for the highest used doping value. The optical energy gap E_g decreased ranging from 1.66 eV to 1.60 eV. The refractive index n, the density of charge carriers N/m* and the plasma frequency ω_p showed an opposite behavior, i.e. an increase in value with doping. Fitting the dispersion values to Sellmeier equation led to the determination of the material natural frequency of oscillating particles. A correlation between the changes in these parameters with the doping has been attempted.     

Compositional modification of Se-Ge-Sb chalcogenide glasses by addition of arsenic element

The modification of structural, thermal and optical properties of Se-Ge-Sb glasses by addition of arsenic element was the goal of this study. In this regards, six different glasses of Se₆₀Ge_40-xSb₅As_x (0 ≤ x ≤ 15) were prepared by conventional melt quenching technique in quartz ampoule. The produced samples were characterized using X-ray diffraction (XRD), differential scanning calorimetry (DSC), UV–Vis–NIR spectrophotometer, Fourier transform infrared (FTIR) and Raman spectroscopy. The fundamental absorption edge for of the glasses was analyzed in terms of the theory proposed by Davis and Mott. Based on the obtained results, the glass transition temperature, optical energy gap and Urbach energy of prepared glasses in this alloying system were in the range of 325–380 °C, 1.43–1.64 eV and 0.03–0.3547 eV, respectively. The as prepared glasses show anomalous behavior at 5–7.5 mole% of arsenic for the glass transition temperature, transmittance, absorption edge, optical energy gap and Urbach energy. Based on the Raman spectra, the structural analysis indicates that, increasing the network connectivity upon increasing the arsenic content up to 7.5 mole% is the main reason of anomalous behavior in Se₆₀Ge_40-xSb₅As_x (0 ≤ x ≤ 15) system.     

Influence of growth temperature and deposition duration on the structure,surface morphology and optical properties of InN/YSZ (1 0 0)

InN films with the wurtzite structure have been grown directly on YSZ (1 0 0) substrate by the RF-magnetron sputtering technique. Strongly (0 0 2) oriented films with smooth surfaces (0.7–2.9 nm surface roughness depending on substrate temperature), were grown within 30 min. Films deposited for 60 min developed three-dimensional (3D) pyramidal islands on top of their surfaces, which diminished the residual elastic strain. The optical absorption edge and PL peak energy around 1.7 eV were found to redshift with increasing film thickness and substrate temperature.     

Growth-morphology-luminescence correlation in ZnO-containing nanostructures synthesized in different media

Zinc hydroxide particles were prepared by a two-step process employing zinc nitrate hexahydrate, urea, ethylene glycol, water and p-toluene-sulfonic acid monohydrate (p-TSA). We used different concentrations of the reactants as well as different volume ratios of the solvents. ZnO particles were obtained by thermal treatment of the reaction products at two different temperatures: 350 °C and 500 °C. The samples were characterized by scanning field emission electron microscopy (SEM), X-ray diffraction (XRD) spectroscopy, BET analysis, thermogravimetry (TG) analysis and photoluminescence (PL) spectroscopy. It was found that after the thermal treatment particles become smaller, with the p-TSA concentration strongly affecting the morphology of the particles. Luminescence properties of the samples probed by PL at 8 K and room temperature exhibited a remarkable correlation with specimens′ nanomorphology. Luminescent features at ～2.0–2.2 eV, ～2.4–2.5 eV, ～2.65 eV, ～2.9 eV, ～3.0–3.1 eV and ～3.3 eV were observed in most specimens, although their relative intensity and temperature dependence were specific to an individual group of samples vis-à-vis their growth history and morphology.     

Oxygen diffusion studies on (Y2O3)2(Sc2O3)9(ZrO2)89

The oxygen tracer diffusion coefficient (D?) has been measured for 9 mol% scandia 2 mol% yttria co-doped zirconia solid solution, (Y₂O₃)₂(Sc₂O₃)₉(ZrO₂)₈₉, using isotopic exchange and line scanning by Secondary Ion Mass Spectrometry, as a function of temperature. The values of the tracer diffusion coefficient are in the range of 10^? 8–10^? 7 cm² s^? 1 and the Arrhenius activation energy was calculated to be 0.9 eV; both valid in the temperature range of 600–900 °C. Electrical conductivity measurements were carried out using 2-probe and 4-probe AC impedance spectroscopy, and a 4-point DC method at various temperatures. There is a good agreement between the measured tracer diffusion coefficients (D?, Ea = 0.9 eV) and the diffusion coefficients calculated from the DC total conductivity data (D_σ, Ea = 1.0 eV), the latter calculated using the Nernst–Einstein relationship.