Crucial dependence of excimer laser toughness of “wet” silica on excess oxygen

Creation of point defects by ArF (6.4 eV) and F₂ laser (7.9 eV) irradiation in synthetic “wet” silica glass thermally loaded with interstitial O₂ molecules was studied by optical absorption, electron paramagnetic resonance and infrared absorption. The presence of excess oxygen caused a significant increase of laser-induced ultraviolet (UV) absorption, which was 4 times (7.9 eV-irradiation) and > 20 times stronger (ArF irradiation) as compared to O₂-free samples. The spectral shape of photoinduced absorption nearly completely coincided with the spectral shape of oxygen dangling bonds (NBOHC) in 3 to 6.5 eV regions. The contribution of Si dangling bonds (E' centers) was less than few % and was not dependent on oxygen content. Peroxy radical defects were not detected. The photoinduced NBOHCs thermally decayed at 400...500 C. However, a subsequent brief 7.9 eV irradiation restored their concentration up to 70%. This sensitization can be in part attributed to generation of interstitial Cl₂ and HCl. These data show that oxygen stoichiometry is an important factor for maximizing laser toughness of wet silica.     

Fluorine laser-induced silicon hydride Si–H groups in silica

Formation and destruction of silicon hydride (Si–H) groups in silica by F₂ laser irradiation and their vacuum ultraviolet (VUV) optical absorption was examined by infrared (IR) and VUV spectroscopy. Photoinduced creation of Si–H groups in H₂-impregnated oxygen deficient silica is accompanied by a growth of infrared absorption band at 2250 cm⁻¹ and by a strong increase of VUV transmission at 7.9 eV. Photolysis of Si–H groups by 7.9 eV photons in this glass was not detected when the irradiation was performed at temperature 80 K. However, a slight destruction of Si–H groups under 7.9 eV irradiation was observed at the room temperature. This finding gives a tentative estimate of VUV absorption cross section of Si–H groups at 7.9 eV as 4 × 10⁻²¹ cm², showing that Si–H groups do not strongly contribute to the absorption at the VUV fundamental absorption edge of silica glass.     

Self-assembling of supramolecular erbium–oxygen clusters in magnetron plasma,and the optimization of erbium luminescence in a-SiOx:H〈Er, O〉 films

Films of erbium-doped amorphous hydrogenated silicon a-SiO_x:H〈Er, O〉 were fabricated by dc-magnetron sputtering at different concentrations of oxygen in the magnetron plasma and different areas of erbium metallic target. It was demonstrated that the increase of oxygen concentration in the plasma gaseous phase above ∼5 mol% leads to a sharp rise in the amount of oxygen bound to erbium in the a-SiO_x:H〈Er, O〉 films. Simultaneously, a smooth increase in the concentration of oxygen bound to matrix-forming elements (silicon, hydrogen) is observed. The increase of the area of erbium target, corresponding to the rise of concentration of erbium ions in the plasma, also favors the binding of erbium with oxygen. However, the content of erbium in the a-SiO_x:H〈Er, O〉 film (in atomic percents) significantly drops with intense binding of erbium with oxygen. These facts point to the formation of erbium–oxygen clusters, with a large number of oxygen atoms, which are probably formed in the magnetron plasma but are deposited as a separate species on the substrate in the reaction chamber. The intensity of erbium photoluminescence rises significantly in the region of formation of these large erbium–oxygen clusters. A ‘phase-transition’ model is formulated, describing the properties of a-SiO_x:H〈Er, O〉 films, based on the assumption of the formation of large erbium–oxygen clusters in the magnetron plasma. The size and composition of these clusters are determined. The model is semi-quantitatively consistent with all the experimental findings.     

Intense luminescence of amorphous Eu2O3 prepared by aqueous sol–gel method

Amorphous Eu₂O₃ was prepared by an aqueous sol–gel method. Emission due to the ⁵D₀ → ⁷F_J (J = 0, 1, 2) transitions of Eu³⁺ ions were observed. The dominant transition was the ⁵D₀ → ⁷F₂ red emission of Eu³⁺. The properties of the as-prepared samples were different with changes in the annealing temperature. To investigate the luminescence properties of the amorphous Eu₂O₃, the temperature-dependent photoluminescence (PL) spectra of samples annealed at 600 °C were measured in the temperature range 77–300 K. PL peak positions were unchanged with the change of temperature.     

Laser-induced defects in fused silica by UV laser irradiation

The structure of fused silica with irradiation of the third harmonic of the Nd:YAG laser was investigated by Fourier transform infrared, Raman and Photoluminescence spectroscopy. Some variation in the Si/O stoichiometry of silica in the ablated spot was induced. The primary defect species are oxygen deficient centers and oxygen interstitials. The frequency shift of the Si–O–Si vibration proves that the central force constant between oxygen and silicon atoms, and the band angle of Si–O–Si increases in the UV-laser ablation spot. Small silicon clusters within SiO_x appear to be a possible explanation for the 564 nm Fluorescence peak, and the 181 cm⁻¹ Raman peak.     

Structure and optical properties of light-emitting Si films fabricated by neutral cluster deposition and subsequent high-temperature annealing

As a new development of our previous study on the production of light-emitting amorphous Si (a-Si) films by the neutral cluster deposition (NCD) method, we have fabricated light-emitting Si films with improved emission intensity by the combined methods of NCD and subsequent high-temperature annealing. The structure of these films is best characterized by Si nanocrystals, surrounded by an interfacial a-SiO_x (x < 2) layer, embedded in an a-SiO₂ film. These improved Si films were observed by atomic force microscopy and high-resolution transmission electron microscopy, and analyzed by means of X-ray diffraction, X-ray photoelectron spectroscopy, photoluminescence (PL) and Fourier transform infrared-attenuated total reflection measurements. The PL curves of the annealed samples exhibit peaks around 600 nm, at almost the same position as the unannealed samples. Their PL intensities, however, have increased to approximately five times those of the unannealed samples. The source of the luminescence is most likely due to electron-hole recombination in the a-SiO₂/Si interfacial a-SiO_x layer.     

Nanostructural and optical features of amorphous AlxSi0.45−xO0.55 (0 ⩽ x ⩽ 0.05) thin films prepared by RF-magnetron sputter techniques

The nanostructural, chemical, and optical features of Al_xSi_0.45−xO_0.55 (0 ⩽ x ⩽ 0.05) thin films were investigated in terms of Al concentration and post-deposition annealing conditions; the films were prepared by co-sputtering a Si main target and Al-chips, and the annealing was carried out at temperatures of 400–1100 °C. The a-Si_0.45O_0.55 films prepared without Al-chips and annealed at 800 °C contain ∼3.5 nm-sized Si nanocrystallites. The photoluminescence (PL) intensity as well as the volume fraction of Si nanocrystallites increased with increasing the concentration of Al to a certain level. In particular, the intensity of the PL spectra of the Al_0.025Si_0.425O_0.550 films which were annealed at 800 °C increased significantly at wavelengths of ∼580 nm. It is highly likely that the observed increase in the PL intensity is caused by the raise in the total volume of the ∼3.5 nm-sized nanocrystallites in the films. The addition of Al as well as the post-deposition annealing allow adjustment and control of the nanostructural and light-emission features of the a-SiO_x films.     

Oxygen-excess amorphous SiO2 with 18O-labeled interstitial oxygen molecules

Exchange between oxygen molecules embedded in amorphous SiO₂ (interstitial O₂) and oxygen atoms in the a-SiO₂ network is found to be remarkably slow at 500 °C. Thermal loading of ¹⁸O₂ at this temperature yields a-SiO₂ containing ¹⁸O-labeled interstitial O₂ whose ¹⁸O fraction is as high as ~ 90%. The ¹⁸O fraction of interstitial O₂ in this sample is quickly decreased by thermal annealing at or above 700 °C because of the oxygen exchange accompanied by the release of ¹⁶O from the a-SiO₂ network. This finding indicates that the oxygen exchange starts at much lower temperatures than indicated by previous works, based on monitoring of the isotopic composition of oxygen atoms in the a-SiO₂ network.     

Improved method for preparation of anhydrous silica by microwave irradiation with spectroscopic characterization and toxicity assay

Amorphous anhydrous silica SiO_{2 (mw)} (99.99%) is successfully synthesized through microwave irradiation technique and time of reaction is reduced up to 1 h. The dehydration phase study of Si–water, Si–OH, Si–O–Si networking, elemental analysis and surface morphology was carried out by FTIR, FTNIR, SEM and EDAX spectroscopic techniques. The broad absorption stretching and bending of Si–OH and H₂O at 3695.38–2832.96 cm^? 1, 1638 cm^? 1 and 1191.20–1017.14 cm^? 1 completely disappeared and appearance of new bands at 946.93 and 797.63 cm^? 1 confirmed the amorphous anhydrous silica with Si–O–Si networking. The SEM images of SiO_{2 (mwc)} described the smooth and fine particle texture and confirmed 99.99% Si–O–Si networking of anhydrous silica. The 99.99% purity was verified by EDAX spectra which exhibited sharp signals only for oxygen and silicon. Toxicity against Monomorium minimum and Tribolium castaneum with 100% mortality and LT₅₀ 91 min and 7.5 h respectively is being reported. It can be used for long storage of grains in the future.     

Crystallization of bismuth titanate and bismuth silicate grown as thin films by atomic layer deposition

Bismuth silicate and bismuth titanate thin films were deposited by atomic layer deposition (ALD). A novel approach with pulsing of two Bi-precursors was studied to control the Si/Bi atomic ratio in bismuth silicate thin films. The crystallization of compounds formed in the Bi₂O₃–SiO₂ and Bi₂O₃–TiO₂ systems was investigated. Control of the stoichiometry of Bi–Si–O thin films was studied when deposited on Si(1 0 0) and crystallization was studied for films on sapphire and MgO-, ZrO₂- and YSZ-buffered Si(1 0 0). The Bi–Ti–O thin films were deposited on Si(1 0 0) substrate. Both Bi–Si–O and Bi–Ti–O thin films were amorphous after deposition. Highly a-axis oriented Bi₂SiO₅ thin films were obtained when the Bi–Si–O thin films deposited on MgO-buffered Si(1 0 0) were annealed at 800 °C in nitrogen. The full-width half-maximum values for 200 peak were also studied. An excess of bismuth was found to improve the crystallization of Bi–Ti–O thin films and the best crystallinity was observed with Ti/Bi atomic ratio of 0.28 for films annealed at nitrogen at 1000 °C. Roughness of the thin films as well as the concentration depth distribution were also examined.     

Site selective spectroscopy of Eu3+ in heavy-metal oxide glasses

In this work, we report time-resolved line-narrowed fluorescence spectra of the ⁵D₀ → ⁷F₀₋₆ transitions of Eu³⁺-doped 40Bi₂O₃–40PbO–10Ga₂O₃–10GeO₂ and 60GeO₂–25PbO–15Nb₂O₅ glasses obtained at 10 K by using different resonant excitation wavelengths along the ⁷F₀ → ⁵D₀ transition. The wavelength dependence of the ⁷F₁ splitting in both glasses suggests the existence of a broad distribution of Eu³⁺ centres possessing a variety of local field environments. The influence of the local coordination ions on the optical properties of Eu³⁺ has been studied by analysing the dependence of the crystal field (CF) parameters on the excitation energy along the ⁷F₀ → ⁵D₀ transition.     

Network structure of multi-component sodium borosilicate glasses by neutron diffraction

Neutron diffraction structure study has been performed on multi-component sodium borosilicate based waste glasses with the composition of (65 − x)SiO_2. · xB₂O₃ · 25Na₂O · 5BaO · 5ZrO₂, x = 5–15 mol%. The maximum momentum transfer of the experimental structure factor was 30 Å⁻¹, which made available to determine the distribution function with high r-space resolution. Reverse Monte Carlo modelling was applied to calculate several partial atomic pair correlation functions, nearest neighbor distances and coordination numbers have been revealed. The characteristic features of Si–O and Si–Si distributions are similar for all glassy samples, suggesting that the Si–O network consisting of tetrahedral SiO₄ units is highly stable even in the multi-component glasses. The B–O correlations proved to be fairly complex, two distinct first neighbor distances are present at 1.40 Å and 1.60 Å, the latter equals the Si–O distance. Coordination number distribution analyzes has revealed 3 and four-coordinated boron atoms. The O–O distribution suggests a network configuration consisting of boron rich and silicon rich regions. Our findings are consistent with a structure model where the boron rich network contains mostly trigonal BO₃ units, and the silicon rich network is formed by a mixed continuous network of ^[4]Si–O–Si^[4] with several different ^[4]B–O–Si^[4] and ^[3]B–O–Si^[4] linkages.     

Ex situ XRD,TEM, IR,Raman and NMR spectroscopy of crystallization of lithium disilicate glass at high pressure

The structure of Li₂O · 2SiO₂ (LS₂) glass was investigated as a function of pressure and temperature up to 6 GPa and 750 °C, respectively, using XRD, TEM, IR, Raman and NMR spectroscopy. Glass densified at 6 GPa has an average Si–O–Si bond angle ∼7° lower than that found in glass processed at 4.5 GPa. At 4.5 GPa, lithium disilicate crystallizes from the glass, while at 6 GPa new high pressure form of lithium metasilicate crystallizes. This new phase, while having lithium metasilicate crystal symmetry, contains at least four different Si sites. NMR results for 6 GPa indicate the presence of Q⁴ species with (Q⁴)Si–O–Si(Q⁴) bond angles of ∼157°. This is the first reported occurrence of Q⁴ species with such large bond angles in alumina free alkali silicate glass. No five- or six-coordinated Si are found.     

Thermal lens study of PbO–Bi2O3–Ga2O3–BaO glasses doped with Yb3+

The aim of this paper is to present a study of the thermal lens technique in quantifying the thermo optical coefficients: ds/dT (optical path change with temperature), thermal diffusivity and conductivity of PbO–Bi₂O₃–Ga₂O₃–BaO glasses doped with Yb³⁺. The thermal lens results indicate that the heat generation, as a function of the incident wavelength, resembles the absorption band ²F_7/2 → ²F_5/2 of Yb³⁺. Thermal diffusivity of 2 × 10⁻³ cm²/s and thermal conductivity of 4.5 × 10⁻³ W/K cm were obtained and are similar to other glasses already reported in previous literature. The results emphasize that the thermal lens technique can be a powerful tool to study the heat generation of new glassy systems.     

Microstructural evolution of amorphous silica following alkali–silica reaction

Combining X-ray diffraction, NMR (CP-MAS and ²⁹Si NMR-MAS) and diffuse reflectance infra-red Fourier transformed spectroscopy (DRIFTS), the local structural changes induced during the reactivity of amorphous (a-SiO₂) under alkali–silica reaction (ASR) have been investigated. XRD patterns provide useful and new qualitative information concerning the reactivity of a-SiO₂. A shift of the maximum of the halo towards the high values of 2θ is observed when the reaction progresses. NMR shows that ASR is accompanied in a-SiO₂ by the diminution of Q₄ species and by the formation of Q₃ (and to a less extend to Q₂) species. This importance played by Q₃ species confirms the results obtained with natural alkali–silica gels. The formation of OH bonds observed by DRIFTS can be followed at ca. 950 cm^?1 and confirms NMR results. The microstructural state of silica (here represented by the medium- and short-range order (MRO) of amorphous silica) plays a crucial role in governing the kinetics of the ASR.     

Spectroscopic properties and energy transfer in Ga2O3– Bi2O3–PbO–GeO2 glasses codoped with Tm3+ and Ho3+

This paper reports on the spectroscopic properties and energy transfer in Ga₂O₃–Bi₂O₃–PbO–GeO₂ glasses doped with Tm³⁺ and/or Ho³⁺. From the optical absorption spectra of Tm³⁺, Judd–Ofelt intensity parameters, radiative transitions probabilities, fluorescence branching ratios, and radiative lifetimes have been calculated using Judd–Ofelt theory. The measured differential scanning calorimetry result shows that the glass exhibits excellent stability against devitrification with ΔT = 129 °C. The measured luminescence spectra show that the ³H₄ → ³F₄ transition of Tm³⁺ upon 808 nm laser diode excitation possess a broad full width at half-maximum of ∼126 nm. The maximum value calculated stimulated emission cross-section and the measured lifetime of ³H₄ level from the 1.47-μm transition are ∼4.73 × 10⁻²¹ cm² and ∼0.239 ms, respectively. It is noticed that codoping of Ho³⁺ could significantly enhanced the ratio of the intensity of 1.47–1.80 μm by energy transfer via Tm³⁺: ³F₄ → Ho³⁺: ⁵I₇.     

Phosphate speciation in sodium borosilicate glasses studied by nuclear magnetic resonance

The structure of RNa₂O · B₂O₃ · KSiO₂ · xP₂O₅ (0.5 < R < 2; 0.86 < K < 3) borosilicate glasses has been studied by nuclear magnetic resonance (NMR). ³¹P magic angle spinning (MAS), double quantum-magic angle spinning (DQ-MAS) and ³¹P–¹¹B transfer of populations under double resonance magic angle spinning (TRAPDOR MAS) NMR were used to determine the phosphate speciation in the glasses and their connectivity with the borosilicate network. The structure of the glass network was characterized with ¹¹B, ²⁹Si and ²³Na MAS NMR. Ab initio calculations of the ³¹P chemical shielding were carried out in order to confirm the connectivity between phosphorus and the structural units of the borosilicate glass network. Na₃PO₄ (monophosphate), Na₄P₂O₇ (diphosphate) and P–O–B species (mono- and diphosphate groups with borate units as the next nearest neighbors) are found all along the compositional range studied. The proportion of the P–O–B groups increases as the glass optical basicity decreases, while the proportions of mono- and diphosphate species decrease. The change in the glass transition temperature of the phospho-borosilicate glasses with respect to that of the borosilicate ones is discussed in terms of the structural characterization. The formation of phosphate species gives rise to the increase in T_g, which is attributed to the re-polymerization of the silicate network, while the formation of P–O–B bonds weakens the glass network and produces a decrease in the glass transition temperature.     

Luminescence properties of nonbridging oxygen hole centers at the silica surface

Two variants of the surface-nonbridging oxygen hole center, (Si–O)₃Si–O^? and (Si–O)₂(H–O)Si–O^?, stabilized in porous films of silica nano-particles were investigated by time resolved luminescence excited in the visible and UV spectral range by a tunable laser system. Both defects emit a photoluminescence around 2.0 eV with an excitation spectrum evidencing two maxima at 2.0 and 4.8 eV, this emission decreases by a factor ～2 on increasing the temperature from 8 up to 290 K. However, the different local structure influences the emission lineshape, the quantum yield and the decay lifetime. Such peculiarities are discussed on the basis of the symmetry properties of these defects.     

Medium-range order in phospho-silicate bioactive glasses: Insights from MAS-NMR spectra,chemical durability experiments and molecular dynamics simulations

The medium-range order of phospho-silicate bioactive glasses (with compositions (2 ? p)SiO₂ · 1Na₂O · 1.1CaO · pP₂O₅, in which p = 0.10, 0.20, 0.26) has been studied by means of a combined-experimental (MAS-NMR, chemical durability measurements) and computational (classical molecular dynamics (MD)) approach. The structural model obtained by MD is showed to be helpful in the interpretation of the NMR spectra. A small amount of Si–O–P link units has been detected in glasses with low P₂O₅-content, but at high P₂O₅ concentration the percentage of Si–O–P bridges becomes important. However, Qⁿ distributions show that the HP5 (p = 0.20) glass structure is less polymerized with respect to the H (p = 0.10) and HP6.5 (p = 0.26) glasses. These results provide useful explanation of the behavior of these glasses in water and highlight the influence of the medium-range order on a very important property of potential bioactive glasses such as the chemical durability.