Evaluation of basic physical parameters of quaternary Ge–Sb-(S,Te) chalcogenide glasses

New quaternary chalcogenide Ge_xSb_40?xS₅₀Te₁₀ (x = 10, 20 and 27 at.%) and Ge_xSb_40?xS₅₅Te₅ (x = 20 and 27 at.%) glasses have been synthesized and the compositions have been characterized applying prompt gamma-ray activation analyses, neutron diffraction, and material density measurements. Using the experimental data, the basic physical parameters, such as average atomic volume, packing density, compactness, average coordination number, number of constrains, average heat of atomization and cohesive energy, of the synthesized glasses are evaluated and the results are discussed in a function of glass composition.     

Structural study of GexSb40−xS60 (x = 10, 20 and 30) glasses

The atomic structures of Ge–Sb–S ternary glasses have been investigated by using the neutron diffraction method. The structure factor, S(q), for Ge_xSb_40−xS₆₀ (x = 10, 20 and 30) has a first sharp diffraction peak (FSDP) at around 1.1 Å⁻¹. The oscillation in S(q) persisted up over 25 Å⁻¹ indicates that the chemical short-range order is presented in these glasses. The aspect of S(q) for Ge₁₀Sb₃₀S₆₀ is different from those for Ge₂₀Sb₂₀S₆₀ and Ge₃₀Sb₁₀S₆₀. These results show that the atomic structure changes drastically between Ge₁₀Sb₃₀S₆₀ and Ge₂₀Sb₂₀S₆₀. The short-range order of tetrahedral GeS₄ and pyramidal SbS₃ units seems to exist in the Ge_xSb_40−xS₆₀ (x = 10, 20 and 30) glasses.     

Optical properties and infrared-to-visible upconversion in Er3+-doped GeO2–Bi2O3 and GeO2–PbO–Bi2O3 glasses

Luminescence properties and upconversion studies of germanate glasses in ternary GeO₂–PbO–Bi₂O₃ and binary GeO₂–Bi₂O₃ systems containing Er₂O₃ (0.1–1.0 wt%) are presented for the first time. The Judd-Ofelt parameters found for these glasses are: Ω₂ = 4.50 × 10⁻²⁰ cm², Ω₄ = 1.55 × 10⁻²⁰ cm² and Ω₆ = 0.69 × 10⁻²⁰ cm² for binary glasses and Ω₂ = 4.44 × 10⁻²⁰ cm², Ω₄ = 1.82 × 10⁻²⁰ cm² and Ω₆ = 0.39 × 10⁻²⁰ cm² for ternary glasses. The refractive index of these glasses is found to be ∼2. The transition ⁴I_13/2 → ⁴I_15/2 is peaked at ∼1.53 μm and shows a radiative lifetime around 5 ms. Both systems exhibit similar emission cross-section at 1.53 μm around 0.8 × 10⁻²⁰ cm². Upconverted green emission at ∼530 nm (²H_11/2 → ⁴I_15/2) and ∼550 nm (⁴S_3/2 → ⁴I_15/2) and red emission at ∼668 nm (⁴F_9/2 → ⁴I_15/2) are observed under 980 nm cw excitation. Our results suggest that these glasses are promising candidates for applications in photonics.     

A concerted rational crystallization/amorphization mechanism of Ge2Sb2Te5

Reverse Monte Carlo refinements using electron diffraction data and density functional theory calculations of the local atomic structure of amorphous Ge₂Sb₂Te₅ confirm presence of a noticeable number of four-membered rings with the general Ge(Sb)TeGe(Sb)Te composition similar to the building blocks of its cubic crystalline phase. The persistence of these rings, as well as the presence of the medium range order at the scale of about 1 nm, suggests that the amorphization/crystallization transition in Ge₂Sb₂Te₅ can be modelled with a concerted rotation of the sheets of atom-squares in {1 0 0} faces of cubic subcells of the cubic crystalline phase, similar to Rubik’s cube rotation. This mechanism can produce large models of material that agree with a range of the previous experimental and theoretical studies and also with the experimental electron diffraction data.     

Sol–gel derived highly transparent and conducting yttrium doped ZnO films

This paper reports the structural, electrical and optical properties of Yttrium doped zinc oxide (YZO) thin films deposited on Corning (7059) glass substrates by spin coating technique. A precursor solution of ZnO, 0.2 M in concentration was prepared from zinc acetate dissolved in anhydrous ethanol with diethanolamine as a sol gel stabilizer. Yttrium nitrate hexahydrate (Y₂NO₃ · 6H₂O) was used as the dopant (3 wt%) in the present study. The films of different thickness in the range (200–500 nm) were prepared. The films were annealed in air at 450 °C for 1 h. It was observed that the c-axis orientation improves and the grain size increases as is indicated by an increase in intensity of the (0 0 2) peak and the decrease in the FWHM with the increase of film thickness. The resistivity decreased sharply from 2.8 × 10⁻² to 5.8 × 10⁻³ Ω-cm as the thickness increased from 200 to 500 nm. However, the average transmittance decreased from 87% to 82.6% as the film thickness increased to 500 nm. The lowest sheet resistance of ∼120 Ω/□ was obtained for the 500 nm thick film.     

Smallest (∼10 nm) phase-change marks in amorphous and crystalline Ge2Sb2Te5 films

Electrical nano-scale crystallization and amorphization in amorphous and crystalline Ge₂Sb₂Te₅ films have been studied using scanning probe microscopes. In scanning tunneling microscopes, the phase changes can be induced, not by tunneling currents, but by conducting currents flowing through contacted probes. In an atomic force microscope, metallic cantilevers can produce phase-change marks with minimal sizes of ∼10 nm. The crystallization and amorphization processes show different dependences upon thickness of Ge₂Sb₂Te₅ films. These features are discussed from thermo-dynamical and microscopic structural points-of-view.     

Static and dynamic structures of liquid GeTe mixtures

Neutron diffraction measurements of the liquid Ge–Te system and quasi- and inelastic neutron scattering experiments of the eutectic liquid Ge₁₅Te₈₅ were performed in the temperature range from 400 to 560 °C. The large temperature dependence of the static structure for liquid Ge₁₅Te₈₅ is reconfirmed; however it is found that the compositional dependence obtained at around 80 °C above the liquidus curve is rather small. The dynamic structure factors of liquid Ge₁₅Te₈₅ in the Q-region from 0.2 to 2.6 Å⁻¹ show a normal temperature dependence. From the vibrational density of states, it is found that the Te–Te covalent bond persists in liquid Ge₁₅Te₈₅; however a bending mode was not assigned clearly.     

The electrical switching and thermal behavior of bulk Ge15Te85 − xSnx and Ge17Te83 − xSnx glasses

Bulk Ge₁₅Te_85 ? xSn_x and Ge₁₇Te_83 ? xSn_x glasses, are found to exhibit memory type electrical switching. The switching voltages (V_t) and thermal stability of Ge₁₅Te_85 ? xSn_x and Ge₁₇Te_83 ? xSn_x glasses are found to decrease with Sn content. The composition dependence of V_t has been understood on the basis of the decrease in the OFF state resistance and thermal stability of these glasses with tin addition. X-ray diffraction studies reveal that no elemental Sn or Sn compounds with Te or Ge are present in thermally crystallized Ge–Te–Sn samples. This indicates that Sn atoms do not interact with the host matrix and form a phase separated network of its own, which remains in the parent glass matrix as an inclusion. Consequently, there is no enhancement of network connectivity and rigidity. The thickness dependence of switching voltages of Ge₁₅Te_85 ? xSn_x and Ge₁₇Te_83 ? xSn_x glasses is found to be linear, in agreement with the memory switching behavior shown by these glasses.     

Fabrication and characterization of transparent conductive ZnO:Al thin films prepared by direct current magnetron sputtering with highly conductive ZnO(ZnAl2O4) ceramic target

Using a highly conductive ZnO(ZnAl₂O₄) ceramic target, c-axis-oriented transparent conductive ZnO:Al₂O₃ (ZAO) thin films were prepared on glass sheet substrates by direct current planar magnetron sputtering. The structural, electrical and optical properties of the films (deposited at different temperatures and annealed at 400°C in vacuum) were characterized with several techniques. The experimental results show that the electrical resistivity of films deposited at 320°C is 2.67×10⁻⁴ Ω cm and can be further reduced to as low as 1.5×10⁻⁴ Ω cm by annealing at 400°C for 2 h in a vacuum pressure of 10⁻⁵ Torr. ZAO thin films deposited at room temperature have flaky crystallites with an average grain size of ∼100 nm; however those deposited at 320°C have tetrahedron grains with an average grain size of ∼150 nm. By increasing the deposition temperature or the post-deposition vacuum annealing, the carrier concentration of ZAO thin films increases, and the absorption edge in the transmission spectra shifts toward the shorter wavelength side (blue shift).     

Glass composition dependence of luminescence due to Ge2+ center in germanate glasses

Germanate glasses were prepared by the melt-quenching method using an assembled hot-thermocoupler equipped in a sample chamber of a fluorescence spectrometer, and subsequently their luminescence and excitation spectra were measured. In the GeO₂ glass, luminescence bands due to the Ge²⁺ center appeared at the central wavelengths of 300 and 395 nm, their excitation bands being at 250 and 330 nm, respectively. In the (100 − x)GeO₂ − xM_mO_n glasses, for M_mO_n = B₂O₃ (x ≦ 50), SiO₂ (x ≦ 40), and Al₂O₃ (x ≦ 2), the luminescence intensity and therefore the amount of the Ge²⁺ center increased with increasing the content of M_mO_n, where M^(2n/m)+ ions (B³⁺, Si⁴⁺, and Al³⁺) have lower basicities than a Ge⁴⁺ ion. Contrarily, for M_mO_n = Li₂O (x ≦ 30), Na₂O (x ≦ 20), K₂O (x ≦ 20), CaO (x ≦ 20), SrO (x ≦ 3), BaO (x ≦ 15), ZnO (x ≦ 20), Ga₂O₃ (x ≦ 10), Sb₂O₃ (x ≦ 20), Bi₂O₃ (15 ≦ x ≦ 25), TiO₂ (x ≦ 3), and Nb₂O₅ (x ≦ 10), the luminescence intensity and the amount of the Ge²⁺ center rapidly decreased with increasing the amount of additives and disappeared, where M^(2n/m)+ ions (Li⁺, Na⁺, K⁺, Ca²⁺, Sr²⁺, Ba²⁺, Zn²⁺, Ga³⁺, Sb³⁺, Bi³⁺, Ti⁴⁺, and Nb⁵⁺) have higher basicities than a Ge⁴⁺ ion.     

Bond character,optical properties and ionic conductivity of Li2O/B2O3/SiO2/Al2O3 glass: Effect of structural substitution of Li2O for LiCl

A glass of composition (20 ? x)Li₂O–xLiCl–65B₂O₃–10SiO₂–5Al₂O₃ where 0 ? x ? 12.5 wt% is prepared using the normal melt-quenching technique. The optical constants and electrical conductivity and their correlation are investigated, furnished and discussed with the substitution of Li₂O for LiCl. The mechanism of the optical absorption and the calculated Urbach energy follow the rule of phonon-assisted transitions. The ionic conduction mechanism is determined by activation energy process. Substitution up to 10 wt% LiCl provides high ionic conductivity (1.9 × 10^?2 Ω^?1 m^?1) due to the high average electronegativity of LiCl which increases the polarizability of lithium ions. The small cation–anion distance approach confirmed the enhancement in ionic conductivity of LiCl containing glass compared to that of Li₂O. Due to the large size of Cl^? ions, there is an expansion of the lattice which in turn broadens the available path windows. For 12.5 wt% LiCl, anomalous density behavior is observed and a reduction in conductivity is occurred, σ = 5.4 × 10^?3 Ω^?1 m^?1. Owing to the model of bond fluctuation, the reduction is attributed to the increase in the alkali halide concentration which creates bottlenecks that hinder the motion of Li⁺ ions. The ionic conductivity character is strongly supported by the behavior of the glass ionicity factor, density, molar volume, refractive index, average boron–boron separation, molar refraction, metallization criterion and non-bridging oxygen concentration of the studied glass.     

Thermally reversing window in Ge15Te85 − xInx glasses: Nanoindentation and micro-Raman studies

Nanoindentation studies on Ge₁₅Te_85 ? xIn_x glasses indicate that the hardness and elastic modulus of these glasses increase with indium concentration. While a pronounced plateau is seen in the elastic modulus in the composition range 3 ≤ x ≤ 7, the hardness exhibits a change in slope at compositions x = 3 and x = 7. Also, the density exhibits a broad maximum in this composition range. The observed changes in the mechanical properties and density are clearly associated with the thermally reversing window in Ge₁₅Te_85 ? xIn_x glasses in the composition range 3 ≤ x ≤ 7. In addition, a local minimum is seen in density and hardness around x = 9, the chemical threshold of the system. Further, micro-Raman studies reveal that as-quenched Ge₁₅Te_85 ? xIn_x samples exhibit two prominent peaks, at 123 cm^? 1 and 155 cm^? 1. In thermally annealed samples, the peaks at 120 cm^? 1 and 140 cm^? 1, which are due to crystalline Te, emerge as the strongest peaks. The Raman spectra of polished samples are similar to those of annealed samples, with strong peaks at 123 cm^? 1 and 141 cm^? 1. The spectra of lightly polished samples outside the thermally reversing window resemble those of thermally annealed samples; however, the spectra of glasses with compositions in the thermally reversing window resemble those of as-quenched samples. This observation confirms the earlier idea that compositions in the thermally reversing window are non-aging and are more stable.     

Growth and spectral properties of Er:Gd2SiO5 crystal

Er³⁺-doped Gd₂SiO₅ (Er:GSO) single crystal with dimensions of ? 35×40 mm³ has been grown by the Czochralski method. The absorption and fluorescence spectra of the Er:GSO crystal were measured at room temperature. The spectral parameters were calculated based on Judd–Ofelt theory, and the intensity parameters Ω₂, Ω₄ and Ω₆ are obtained to be 6.168×10^?20, 1.878×10^?20, and 1.255×10^?20 cm², respectively. The emission cross-section has been calculated by Fuechtbauer–Ladenbury formula.     

Multiple phase-transition in Ge2Sb2Te5 based phase change memory cell by current–voltage measurement

A Ge₂Sb₂Te₅ based phase change memory (PCM) cell was fabricated by a standard 0.18 μm complementary metal–oxide-semiconductor technology, combined with subsequent special lift-off process. Through current–voltage measurements, the phase change from the amorphous state (high resistance state) to the face-centered cubic crystalline state and the hexagonal close-packed crystalline state (two kinds of different low resistance states) was observed. In addition to the typical phase-transition, where the PCM cell changes from initial amorphous state directly into final crystalline state, intermediate resistance states were observed during the phase changes from the high resistance state to the low resistance state.     

Structure, electrical, optical and thermal properties of Ge4Sb4Tex (x = 8, 9 and 10) thin films

The crystalline samples of Ge₄Sb₄Te₁₀, Ge₄Sb₄Te₉, and Ge₄Sb₄Te₈ were prepared and their amorphous semiconducting thin films obtained by flash evaporation. Their sheet resistance decreased slowly with temperature up to 147–160 °C with activation energy of electrical conductivity ΔE = 0.40–0.44 eV. Above these temperatures, the sheet resistance drops abruptly by several orders due to crystallization. The drop of resistivity proceeds in two steps. Two steps of phase change were also found on curves of DSC and on the temperature dependence of index of refraction. It pays for slow heating rates, crystallization induced by short (≈30 ns) laser pulses proceeds probably in one step only for all studied samples (as it follows from X-ray diffraction), not only for Ge₂Sb₂Te₅ in which a single phase formation was confirmed. The crystallization temperatures are increasing slightly with decreasing Te content in the series Ge₄Sb₄Te₁₀–Ge₄Sb₄Te₉–Ge₄Sb₄Te₈ from 147 to 160 °C. The X-ray diffractograms revealed that in laser crystallized samples can be found only cubic modification of Ge₂Sb₂Te₅ type (a = 0.6 nm), while the samples annealed (230 °C, 2 h) or annealed after the crystallization with laser pulse, contain also small amounts of hexagonal phase.     

Effects of Ge addition on the optical and electrical properties of eutectic Sb70Te30 films

The aim of this work is to study the influence of Ge addition on the optical and electrical properties in eutectic SbTe thin films (with the compositions: Sb₇₀Te₃₀, Ge₂Sb₇₀Te₂₈, Ge₅Sb₇₀Te₂₅ and Ge₁₀Sb₆₅Te₂₅) using visible optical reflectance, ellipsometry measurements, near infrared transmittance spectra, and four probe electrical resistivity measurements. From near infrared transmittance measurements the optical band gap was determined using Tauc’s expression for amorphous materials, a value of about 0.47 eV was obtained without any clear dependence on the Ge content. All amorphous films have approximately the same reflectance value, however the contrast ratio between the crystalline and amorphous phases decrease with increase of Ge. Using in situ four probe measurements versus temperature the dependence of the activation energy of conductance and the onset of the crystallization temperature have been determined for different materials. Four probe measurements have shown that the resistivity of amorphous films increases with increase of Ge. The results obtained have shown that optical and electrical properties of SbTe films with near eutectic composition change with the Ge content and depending on the application, in either optical or electrical memory devices, the most suitable composition needs to be determined.     

A composition dependent thermal behavior of GexSe35−xTe65 glasses

Alternating differential scanning calorimetric (ADSC) studies have been performed to understand the thermal behavior of bulk Ge_xSe_35?xTe₆₅ glasses (17 ? x ? 25); it is found that the glasses with x ? 20 exhibit two crystallization exotherms (T_c1 & T_c2). On the other hand, those with x ? 20.5, show a single crystallization reaction upon heating. The exothermic reaction at T_c1 has been found to correspond to the partial crystallization of the glass into hexagonal Te and the reaction at T_c2 is associated with the additional crystallization of rhombohedral GeTe phase. The glass transition temperature of Ge_xSe_35?xTe₆₅ glasses is found to show a linear but not-steep increase, indicating a progressive, but a gradual increase in network connectivity with Ge addition. It is also found that T_c1 of Ge_xSe_35?xTe₆₅ glasses with x ? 20, increases progressively with Ge content and eventually merges with T_c2 at x ≈ 20.5 (〈r〉 = 2.41); this behavior has been understood on the basis of the reduction in TeTe bonds of lower energy and increase in GeTe bonds of higher energy, with increasing Ge content. Apart from the interesting composition dependent crystallization, an anomalous melting behavior is also exhibited by the Ge_xSe_35?xTe₆₅ glasses.     

Solid–liquid interfacial energy of neopentylglycol solid solution in equilibrium with neopentylglycol–(D) camphor eutectic liquid

The grain boundary groove shapes for equilibrated solid neopentylglycol (NPG) solution (NPG–3 mol% D-camphor) in equilibrium with the NPG–DC eutectic liquid (NPG–36.1 mol% D-camphor) have been directly observed using a horizontal linear temperature gradient apparatus. From the observed grain boundary groove shapes, the Gibbs–Thomson coefficient (Г), solid–liquid interfacial energy (σ_SL) of NPG solid solution have been determined to be (7.5±0.7)×10^?8 K m and (8.1±1.2)×10^?3 J m^?2, respectively. The Gibbs–Thomson coefficient versus T_mΩ^1/3, where Ω is the volume per atom was also plotted by linear regression for some organic transparent materials and the average value of coefficient (τ) for nonmetallic materials was obtained to be 0.32 from graph of the Gibbs–Thomson coefficient versus T_mΩ^1/3. The grain boundary energy of solid NPG solution phase has been determined to be (14.6±2.3)×10^?3 J m^?2 from the observed grain boundary groove shapes. The ratio of thermal conductivity of equilibrated eutectic liquid to thermal conductivity of solid NPG solution was also measured to be 0.80.     

Conductivity percolation transition of Agx(Ge0.25Se0.75)100−x glasses

The ionic conductivity of several chalcogenide glasses increases abruptly with mobile ion addition from values typical of insulating materials (10⁻¹⁶–10⁻¹⁴ Ω⁻¹ cm⁻¹) to values of fast ionic conductors (10⁻⁷–10⁻¹ Ω⁻¹ cm⁻¹). This change is produced in a limited concentration range pointing to a percolation process. In a previous work [M. Kawasaki, J. Kawamura, Y. Nakamura, M. Aniya, Solid State Ionics 123 (1999) 259] the transition from semiconductor to fast ionic conductor of Ag_x(Ge_0.25Se_0.75)_100−x glasses was detected at x¹ ≅ 10 at.% in the form of a steep change in the conductivity. Ag_x(Ge_0.25Se_0.75)_100−x glasses with x ⩽ 25 at.%, prepared by a melt quenching method, are investigated by impedance spectroscopy in the frequency range 5 Hz–2 MHz at different temperatures, T, from room temperature to 363 K and by DC measurements at room temperature. The conductivity of the glasses, σ, was obtained as a function of silver concentration and temperature. For x ⩾ 10 at.% our results are in agreement with those reported by Kawasaki et al. [M. Kawasaki, J. Kawamura, Y. Nakamura, M. Aniya, Solid State Ionics 123 (1999) 259]. The percolation transition was observed in the range 7 ⩽ x ⩽ 8. The temperature dependence of the ionic conductivity follows an Arrhenius type equation σ = (σ_o/T) · exp(−E_σ/kT). The activation energy of the ionic conductivity, E_σ, and the pre-exponential term, σ_o, are calculated. The results are discussed in connection with other chalcogenide and chalcohalide systems and linked with the glass structures.