Synthesis and structure–property relations in xCuO–(1 − x)Bi2O3 (0.5 ⩽ x ⩽ 0.9) (C1–C5: x = 0.5, 0.6, 0.7, 0.8, 0.9) glasses

Synthesis of the xCuO–(1 ? x)Bi₂O₃ (0.5 ? x ? 0.9) (C1–C5: x = 0.5, 0.6, 0.7, 0.8, 0.9) glasses was done via nitrate–citrate gel route. Glassy phase is ascertained by XRD studies. Magnetic susceptibility results in the range 4.2–400 K show weak paramagnetic nature with exchange integrals ～0.024–0.13 eV in the glasses. The electron paramagnetic resonance (EPR) in the range 4.2–363 K shows g ≈ 2.0 and the trend of the g-matrix elements g_|| > g_⊥ > g_e for the glasses C1–C5 at 4.2 K are due to the Cu²⁺ (3d⁹) paramagnetic site in the glasses which is in a tetragonally elongated octahedron [O_1/2–CuO_4/2–O_1/2] having D_4h symmetry. IR spectroscopic results show the presence of octahedron [BiO_6/2]^3? and [CuO_6/2]^4? units and pyramidal [BiO_2/2O]^? unit in the glasses.     

Structural behavior of CuxZr100−x metallic glass (x = 35−70)

The structural behavior of rapidly quenched amorphous Cu_xZr_100?x alloys was investigated in a wide composition range between 35 and 70 at.% Cu content. High-energy X-ray diffraction patterns, atomic pair correlation functions, mass density and the thermal stability behavior of the alloys all exhibit monotonic changes with composition. Partial pair correlation functions were determined assuming that they remain unchanged in the different amorphous Cu_xZr_100?x alloys and only the weight fractions become altered with changes in composition. The experimental results can be well described by a solid solution-like replacement of Cu and Zr atoms in the whole composition range. No indications are observed neither for the existence of a special atomic arrangement at a particular chemical composition nor for the presence of phase separation in the glassy state of the binary Cu–Zr system.     

Production and properties of high purity TeO2− WO3−(La2O3, Bi2O3) and TeO2− ZnO−Na2O−Bi2O3 glasses

TeO₂–WO₃ (TW), TeO₂–WO₃–La₂O₃ (TWL), TeO₂–WO₃–La₂O₃–Bi₂O₃ (TWLB) and TeO₂–ZnO–Na₂O–Bi₂O₃ (TZNB) glasses were produced by high-purity oxide mixtures melting in platinum or gold crucible at 800 °C in the atmosphere of purified oxygen. The total content of Cu, Mn, Fe, Co and Ni impurities was not more than 0.1–0.5 ppm wt in the initial oxides and glasses. The stability of TZNB glasses to crystallization, characterized by (T_x ? T_g) value more than 150 °C, was demonstrated by DSC measurements at heating rate 10 K/min. In the case of La₂O₃-containing glasses the thermal effects of both crystallization and fusion of the crystallized phases were not observed. The hydroxyl groups absorption coefficients of pure tellurite glasses at the maximum of the absorption band (λ ~ 3 μm) were in the region of 0.012–0.001 cm^?1. The optical absorption losses, measured by the laser calorimetry method at λ = 1.56 and 1.97 μm, did not exceed 100 dB/km.     

Epitaxial lateral overgrowth of non-polar GaN(1 1̄ 0 0) on Si(1 1 2) patterned substrates by MOCVD

m-Plane GaN was grown selectively by metal–organic chemical vapor deposition (MOCVD) on patterned Si(1 1 2) substrates, where grooves aligned parallel to the Si〈1 1 0〉 direction were formed by anisotropic wet etching to expose the vertical Si{1 1 1} facets for growth initiation. The effect of growth conditions (substrate temperature, chamber pressure, and ammonia and trimethylgallium flow rates) on the growth habits of GaN was studied with the aim of achieving coalesced m-plane GaN films. The epitaxial relationship was found to be GaN(1 1? 0 0) || Si(1 1 2), GaN[0 0 0 1] || Si[1 1 –1], GaN[1? 1? 2 0] || Si[1 1? 0]. Among all growth parameters, the ammonia flow rate was revealed to be the critical factor determining the growth habits of GaN. The distribution of extended defects, such as stacking faults and dislocations, in the selectively grown GaN were studied by transmission electron microscopy in combination with spatially resolved cathodoluminescence and scanning electron microscopy. Basal-plane stacking faults were found in the nitrogen-wing regions of the laterally overgrown GaN, while gallium-wings were almost free of extended defects, except for the regions near the GaN/Si{1 1 1} vertical sidewall interface, where high dislocation density was observed.     

Comparative Analysis of the Methods for Obtaining Superconducting Fe1 + ySexTe1 – x Single Crystals

Crystallography Reports - The Fe1 + ySexTe1 – x single crystals grown by the KCl flux and Bridgman methods have been compared using the same investigation...     

Amorphous Ni59Nb40PtxM1−x (M = Ru, Sn) electrocatalysts for oxygen reduction reaction

The oxygen reduction reaction, ORR, on amorphous Ni₅₉Nb₄₀Pt₁, Ni₅₉Nb₄₀Pt_0.6Ru_0.4 and Ni₅₉Nb₄₀Pt_0.6Sn_0.4 electrocatalysts was analyzed by electrochemical techniques such as cyclic voltammetry, CV; rotating disk, RDE, and ring-disk electrodes, RRDE, in a 0.5 M H₂SO₄ solution. The reduced amount of platinum and the incorporation of transition metals in the amorphous catalysts were found to have significant effect on the kinetic parameters of the cathodic reaction. The kinetics study (RRDE) performed on the amorphous catalysts showed a high activity towards the ORR, preferentially proceeding via multi-electron (4e^?) charge transfer pathway toward water formation, with less than 2.8% H₂O₂ in the region of PEMFC applications. The performance on Ni₅₉Nb₄₀Pt₁ was different, which may be related to changes in the electrode surface enrichment of one or two of the amorphous alloy constituents. The performance towards the cathodic reaction allows to envisage that incorporation of small amounts of Pt in the catalyst, may lead to the fabrication of good amorphous electrocatalytic materials with possible applications as cathode electrodes in polymer electrolyte fuel cells.     

Growth of Sm1 – ySryF3 – y (0 < y ≤ 0.31) Crystals and Investigation of Their Properties

Crystallography Reports - Sm1&nbsp;–&nbsp;ySryF3&nbsp;–&nbsp;y (0 &lt; y ≤ 0.31) crystals have been grown from melt by directional solidification in a...     

Electronic properties calculation of Ge1 − x − ySixSny ternary alloy and nanostructure

The band structure of Ge_{1 ? x ? y}Si_xSn_y ternary alloys, which are easier to grow than binary Ge_1-xSn_x alloys, and clearly offer a wider tunability of their direct band-gap and other properties, was calculated and investigated by using the empirical pseudo-potential plane wave method with modified Falicov pseudo-potential formfunction. The virtual crystal approximation (VCA) and 2 × 2 × 2 super-cell (mixed atoms) method were adopted to model the alloy. In order to calculate all of these properties, the empirical pseudo-potential code was developed. The lattice constant of the alloy varies between 0.543 to 0.649 nm. The regions in the parameter space that corresponds to a direct or indirect band gap semiconductor are identified. The Ge_{1 ? x ? y}Si_xSn_y ternary alloy shows the direct band gap for appropriate composition of Si, Ge and Sn. The direct energy gap is in the range 0–1.4 eV (from the VCA calculation), and 0–0.8 eV (from the super-cell calculation), depending on the alloy composition. Therefore, this alloy is a promising material for optoelectronic applications in both visible and infrared range, such as interband lasers or, solar cells. Furthermore, strain-free heterostructures based on such alloys are designed and, using the effective-mass Hamiltonian model, the electronic structure of GeSiSn quantum wells with arbitrary composition is investigated, in order to understand their properties and the potential of their use in devices.     

Nanostructured Crystals of Fluorite Phases Sr1 – xRxF2 + x (R Are Rare-Earth Elements) and Their Ordering. 15. Concentration Dependence of the Defect Structure of As Grown Nonstoichiometric Phases Sr1 – xRxF2 + x (R = Sm,Gd)

Crystallography Reports - The defect structure of as grown single crystals Sr1&nbsp;–&nbsp;xSmxF2&nbsp;+&nbsp;x (x = 0.14, 0.26) and...     

Magnetic behavior,transport properties and nanocrystallization of melt-spun YxCe50 − xCu42Al8 (0 ≤ x ≤ 50) amorphous system

Amorphous Y_xCe_50 ? xCu₄₂Al₈ (0 ≤ x ≤ 50) ribbons prepared by melt-spinning on the Cu wheel were subjected to X-ray diffractometry (XRD), differential scanning calorimetry (DSC) and to the measurements of magnetization and resistivity in the temperature range from 1.7 to 300 K. Effective activation energies, characteristic crystallization temperatures and enthalpies of as-quenched alloys have been determined. Two stages of crystallization have been observed in most samples (except shallow effects in Ce₅₀Cu₄₂Al₈). The activation energies have been calculated from the Kissinger relation to be 247 ± 18 and 570 ± 56 kJ/mol for Y₂₅Ce₂₅Cu₄₂Al₈ and Y₅₀Cu₄₂Al₈, respectively. The absence of the endothermic effect for x = 50, usually associated with a glass transition, below the primary crystallization event, indicates the presence of dispersed polyamorphous packing with a wide range of local glass transitions. The magnetization versus temperature plot for Y₂₅Ce₂₅Cu₄₂Al₈ points to a magnetic ordering at temperatures considerably below 50 K. This observation has been confirmed by the temperature dependence of resistivity, which exhibits a singularity at the same temperature. Moreover, a negative temperature coefficient of resistivity, characteristic of disordered systems, was observed. The electrical resistivity in the Y₂₅Ce₂₅Cu₄₂Al₈ amorphous alloy is governed by the weak localization of electrons.     

Optical and electrical properties of as-prepared and annealed (Se80Te20)100 − xAgx (0 ≤ x ≤ 4) ultra-thin films

Optical and electrical properties of the (Se₈₀Te₂₀)_100 ? xAg_x (0 ≤ x ≤ 4) ultra-thin films have been studied. The ultra-thin films were prepared by thermal evaporation of the bulk samples. Thin films were annealed below glass transition temperature (328 K) and in between glass transition temperature and crystallization temperature (343 K). Thin films annealed at 343 K showed crystallization peaks for Se–Te–Ag phases in the XRD spectra. The transmission and reflection of as-prepared and annealed ultra-thin films were obtained in the 300–1100 nm spectral region. The optical band gap has been calculated from the transmission and reflection data. The refractive index has been calculated by the measured reflection data. It has been found that the optical band gap increases, but the refractive index, extinction coefficient, real and imaginary dielectric constant decrease with increase in Ag content. The optical band gap and refractive index show the variation in their values with increase in the annealing temperature. The extinction coefficient increases with increasing annealing temperature. The surface morphology of ultra-thin films has been determined using a scanning electron microscope (SEM). The measured dc conductivity, under a vacuum of 10^? 5 mbar, showed thermally activated conduction with single activation energy in the measured temperature range (288–358 K) and it followed Meyer–Neldel rule. The dc activation energy decreases with increase in Ag content in pristine and annealed films. The results have been analyzed on the bases of thermal annealing effects in the chalcogenide thin films.     

Square-wave voltammetry and impedance spectroscopy in tin doped melts with the compositions xNa2O · 15Al2O3 · (85 − x)SiO2 (x = 8.5, 11 and 16)

Glasses with the base compositions xNa₂O · 15Al₂O₃ · (85 ? x)SiO₂ (x = 8.5, 11 and 16) doped with 0.5 mol% SnO₂ were investigated by both square-wave voltammetry and impedance spectroscopy in the temperature range from 1300 to 1600 °C. Each recorded square-wave voltammogram exhibits a well pronounced peak attributed to the Sn²⁺/Sn⁴⁺-redox pair. Impedance spectra were measured in a frequency range from 0.1 to 10⁵ s^?1 as a function of the superimposed dc-potential and were simulated using an equivalent circuit taking into account the resistivity of the melt, the electrochemical double layer, a resistor attributed to a kinetically hindered electron transfer and a Warburg parameter which accounts for the diffusion process of Sn⁴⁺ and Sn²⁺ to and from the electrode. Additionally, two impedance elements, a resistor and a capacitance both attributed to adsorption processes were necessary to fit the impedance spectra.     

Optimization of the Compositions of Solid Electrolytes Pb1 – xRxF2 + x with Fluorite-Type Structure in Conductivity and Thermal Stability

Crystallography Reports - The compositions of nonstoichiometric phases Pb1&nbsp;–&nbsp;xRxF2&nbsp;+&nbsp;x (CaF2 type, R is a rare-earth element) have been optimized with...     

Structure and properties of the 70Li2S · (30 − x)P2S5 · xP2O5 oxysulfide glasses and glass–ceramics

The 70Li₂S · (30 ? x)P₂S₅ · xP₂O₅ (mol%) oxysulfide glasses were prepared by the melt quenching method. The glasses were prepared in the composition range 0 ≦ x ≦ 10. The glass–ceramics were prepared by heating the glasses over crystallization temperatures. The PO_nS_3?n (n = 1–3) oxysulfide units were produced in the glasses and glass–ceramics by partial substituting P₂O₅ for P₂S₅. In particular, the P₂OS₆^4? unit would be produced by substituting a small amount of P₂O₅ for P₂S₅. The oxygen atoms were incorporated into the Li₇P₃S₁₁ crystal structure because the diffraction peaks of the oxysulfide glass–ceramic shifted to the higher angle side. The glass–ceramic with 3 mol% of P₂O₅ exhibited the highest conductivity of 3.0 × 10^?3 S cm^?1 and the lowest activation energy for conduction of 16 kJ mol^?1. The P₂OS₆^4? dimer units in the oxygen-incorporated Li₇P₃S₁₁ crystal would improve conductive behavior of the Li₂S–P₂S₅ glass–ceramics.     

Structural Features of Mixed Anions (Мо7 – хWхO24)6– and Their Packing in the [Pd(NH3)4]3(Мо7 – хWxO24)⋅6H2O Crystal Structure

Crystallography Reports - [Pd(NH3)4]3(Мо7&nbsp;–&nbsp;хWxO24)?6H2O crystals with different Mo/W ratios have been formed as a result of the crystallization of a...     

Growth of Pb on Si(3 3 5)–Au surface

The growth, crystallographic structure and electronic properties of ultrathin Pb films grown on a vicinal silicon surface are investigated with reflection high energy electron diffraction (RHEED) and specific resistivity measurement techniques. A Si(3 3 5) surface with a perfect distribution of monoatomic steps separated with (1 1 1) terraces induced by a submonolayer amount of Au is used as a substrate. In the early stage, Pb growth is anisotropic. Apparently, the presence of steps forces the growth of short crystalline Pb chains along the steps. The layer is amorphous in the perpendicular direction. With the increasing thickness, a phase transition takes place between 3 and 4 monolayers (ML) that makes crystalline order also across the terraces. A further increase in thickness causes the layer surface to repeat the substrate morphology. It consists of regularly distributed monoatomic steps and narrow (1 1 1) terraces.     

The electrical switching and thermal behavior of bulk Ge15Te85 − xSnx and Ge17Te83 − xSnx glasses

Bulk Ge₁₅Te_85 ? xSn_x and Ge₁₇Te_83 ? xSn_x glasses, are found to exhibit memory type electrical switching. The switching voltages (V_t) and thermal stability of Ge₁₅Te_85 ? xSn_x and Ge₁₇Te_83 ? xSn_x glasses are found to decrease with Sn content. The composition dependence of V_t has been understood on the basis of the decrease in the OFF state resistance and thermal stability of these glasses with tin addition. X-ray diffraction studies reveal that no elemental Sn or Sn compounds with Te or Ge are present in thermally crystallized Ge–Te–Sn samples. This indicates that Sn atoms do not interact with the host matrix and form a phase separated network of its own, which remains in the parent glass matrix as an inclusion. Consequently, there is no enhancement of network connectivity and rigidity. The thickness dependence of switching voltages of Ge₁₅Te_85 ? xSn_x and Ge₁₇Te_83 ? xSn_x glasses is found to be linear, in agreement with the memory switching behavior shown by these glasses.