A DFT study of H<Subscript>2</Subscript>CO and HCN adsorptions on 3<Emphasis Type="Italic">d</Emphasis>, 4<Emphasis Type="Italic">d</Emphasis>, and 5<Emphasis Type="Italic">d</Emphasis> transition metal-doped graphene nanosheets

The binding of 3d (Sc, Ti, V), 4d (Y, Zr, Nb), and 5d (La, Hf, Ta) transition metals on graphene nanosheet (TM–GNS) with hydrogen-terminated edges and the adsorption of H₂CO and HCN molecules on the pristine and TM-doped GNSs were theoretically studied using a density functional theory method. The calculation showed that all TM atoms had strong binding with GNS, in which the Ta atom displayed the strongest interaction with GNS. The H₂CO and HCN molecules showed much stronger adsorption on the TM–GNSs than that on the pristine GNS. The H₂CO showed stronger interactions with TM–GNSs than that of HCN, in which the Ta-doping displayed the strongest interactions between the GNS and H₂CO or HCN. The adsorption interactions induced dramatic changes of TM–GNS electronic properties. The results revealed that the adsorption strength and sensor ability of GNS can be greatly improved by introducing appropriate TM dopants. Therefore, TM-doped GNSs are suitable for application in H₂CO and HCN storage and sensor.     

Chemically resolved scanning tunneling microscopy imaging of Al on p-type Al0.1Ga0.9As(001)-c(2x8)(2x4)

The ability to chemically differentiate individual subsurface Al and Ga atoms, when imaging the Al0.1Ga0.9As(001)-c(2x8)(2x4) surface with scanning tunneling microscopy (STM), has been observed for the first time. In filled-state STM images first layer As atoms bonded to second layer Al atoms appear brighter than those bonded to second layer Ga atoms. This effect is only observed experimentally with p-type Al0.1Ga0.9As grown on p-type GaAs substrates and has been computationally modeled with density functional theory (DFT) calculations. It is hypothesized that chemical specificity is not observed on n-type material because the extra surface charge given to first layer As atoms by second layer Al atoms adds negligibly to the filled-state density of the surface, thus preventing the visualization of chemical specificity with filled-state STM imaging. The ability to distinguish whether first layer As atoms are bonded to second layer Ga and/or Al atoms in STM images shows that small differences in bond ionicity affect the local electronic structure of the material.     

Electro-structural correlations,elastic and optical properties among the nanolaminated ternary carbides Zr2AC

We have performed ab initio calculations for the nanolaminates Zr₂AC (A = Ti, In, Tl, Si, Ge, Sn, Pb, P, As, S) ceramics to study their electronic structure, elastic and optical properties. In this work, we used the accurate augmented plane wave plus local orbital method with density functional theory to find the equilibrium structural parameters, dielectric functions and to compute the full elastic tensors. The obtained elastic constants were used to quantify the stiffness of the Zr₂AC phases and to appraise their mechanical stability. The relationship between elastic, electronic and valence electron concentration is discussed. Our results show that the bulk modulus and shear modulus increase across the periodic table for Zr₂AC. Furthermore, trends in elastic stiffness are well explained in terms of electronic structure analysis, as occupation of valence electrons in states near the Fermi level of Zr₂AC. We show that increments of bulk moduli originate from additional valence electrons filling states involving Zr d–A p. We show also that Zr d–A p hybridizations are located just below the Fermi level and are weaker bonds than the Zr d–C p hybridizations, which are deeper in energy. As a function of the p-state filling of the A element the Zr d–A p bands are driven to deeper energy. The optical spectra were analyzed by means of the electronic structure, which provides theoretical understanding of the conduction mechanism of these ceramics.     

Modification of electronic properties of Pt(111) surface by means of alloyed and adsorbed metals: DFT study

Following recent tendencies to predict the electrochemical behaviour of metal surfaces by calculation methods, electronic properties of Pt(111) surface modified by either alloying with, or adsorption of, the Sn and Bi atoms, were studied by DFT calculations. It was shown that work function of the surface shows different type of coverage dependence in the cases of alloying and adsorption. In addition, it was demonstrated how position of d-band center of surface Pt atoms is tuned in both of these cases, and the results were commented in terms of catalytic activities of these surfaces toward hydrogen evolution reaction. The article is published in the original.     

FeGa3 and RuGa3: Semiconducting Intermetallic Compounds

The intermetallic compounds FeGa₃ and RuGa₃ were prepared from the elements using a Ga flux and their structures were refined from single-crystal X-ray data. Both compounds crystallize with the FeGa₃ structure type (tetragonal, space group P4₂/mnm, Z=4). Electrical resistivity measurements revealed a semiconducting behavior for FeGa₃ and RuGa₃, which is in contrast to the good metallic conductivity observed for the isotypic compound CoGa₃. The origin of the different electronic properties of these materials was investigated by first-principle calculations. It was found that in compounds adopting the FeGa₃ structure type the transition metal atoms and Ga atoms interact strongly. This opens a d-p hybridization bandgap with a size of about 0.31 eV in the density of states at the Fermi level for 17-electron compounds (i.e., FeGa₃ and RuGa₃). The electronic structure of CoGa₃ (an 18-electron compound) displays rigid band behavior with respect to FeGa₃. As a consequence, the Fermi level in CoGa₃ becomes located above the d-p hybridization gap which explains its metallic conductivity.     

Spin-dependent transport characteristics of Fe met-cars

Using non-equilibrium Green’s function and first-principles calculations we study structural, electronic, and transport properties of Fe₈C₁₂ met-car cluster sandwiched between two Au (1 0 0) electrodes. Several orientations were considered for the cluster attached to the gold surface and full structural optimization has been performed for the whole two-probe system. It was found a large current value for the present device and the molecular orientation plays an important role in the conducting behavior of the system. In energetically favorable case the I–V characteristic remains almost linear at low bias voltage (up to 1.5 V). This finding can be attributed to this fact that the transmission coefficient is almost flat around the gold Fermi level since the transmission is dominated by several broad molecular orbitals. We show that the electronic transmission is significantly spin-polarized while its size is large for the C atoms linkage. We also observe and discuss the NDR behavior of this novel molecular device in the range of 1.0–1.5 V for the energetically favorable configuration. The results are rationalized by analyzing the device transmission coefficient and density of states spectra.     

Scanning tunneling microscopy/spectroscopy study of atomic and electronic structures of In2O on InAs and In0.53Ga0.47As(001)-(4×2) surfaces

Interfacial bonding geometry and electronic structures of In(2)O on InAs and In(0.53)Ga(0.47)As(001)-(4×2) have been investigated by scanning tunneling microscopy/scanning tunneling spectroscopy (STM/STS). STM images show that the In(2)O forms an ordered monolayer on both InAs and InGaAs surfaces. In(2)O deposition on the InAs(001)-(4×2) surface does not displace any surface atoms during both room temperature deposition and postdeposition annealing. Oxygen atoms from In(2)O molecules bond with trough In/Ga atoms on the surface to form a new layer of O-In/Ga bonds, which restore many of the strained trough In/Ga atoms into more bulklike tetrahedral sp(3) bonding environments. STS reveals that for both p-type and n-type clean In(0.53)Ga(0.47)As(001)-(4×2) surfaces, the Fermi level resides near the valence band maximum (VBM); however, after In(2)O deposition and postdeposition annealings, the Fermi level position is close to the VBM for p-type samples and close to the conduction band minimum for n-type samples. This result indicates that In(2)O bonding eliminates surface states within the bandgap and forms an unpinned interface when bonding with In(0.53)Ga(0.47)As/InP(001)-(4×2). Density function theory is used to confirm the experimental finding.     

O2 dissociative adsorption on the Cu‐, Ag‐, and W‐doped Al(111) surfaces from DFT computation

The O₂ adsorption and dissociation on M‐doped (M = Cu, Ag, W) Al(111) surface were studied by density functional theory. The adsorption energy of adsorbate, the average binding energy and surface energy of Al surface, and the doping energy of doping atom were calculated. All the doped atoms can be stably combined with Al atoms, while being slightly embedded in the surface to a certain depth. The TOP‐type surfaces are the most stable doped surfaces for O₂ adsorption, which is related to the orbital hybridization between the adsorbate and the surface atoms, the electronegativity, and the orbital energy level of the doping atoms. Moreover, the O atoms and doping atoms contribute significantly to the density of states (DOS), especially the O‐p orbital electrons and the d orbital electrons of doping atoms. The degree of O₂ dissociation is related to the doping atoms on Al surfaces, and the doping atoms actually resist the dissociation of O₂. W atoms have the best resistance effect on the O₂ dissociation as compared with Cu and Ag atoms, especially W‐1NN surface, which has both large barrier energy and reaction energy.     

Formation of stacking defects at surfaces: From atomistic simulations to density functional theory calculations

We have performed electronic structure calculations to study the evolution of the stacking fault energy at (111) surfaces of metals. We first apply an sp–d tight-binding model and then increase the accuracy on the electronic structure by using density functional theory (DFT) calculations. We show in this way the relative importance of sp–d hybridization both in the formation of defects at the surface of metals and in reconstruction phenomena as a function of band filling especially at the end of transition metal series. Comparing our results with atomistic simulations it is concluded that although atomistic calculations are powerful tools to investigate relaxation mechanisms at surfaces, a higher degree of accuracy on electronic structure is necessary to quantify the energy of some defects at surfaces like stacking faults. In particular long range interactions associated to less localized sp electrons are playing a rather important role in reconstruction phenomena for metals like platinum and gold. These results are backed up by DFT calculations applied to iridium, platinum and gold (111) surfaces.     

Self-activation of catalyst and functionalization of metal surfaces

Why can solid surfaces promote a variety of chemical reactions? We supposed that active sites or active compounds are formed over the catalyst surface during catalysis or in pretreatment. Three topics are discussed from this viewpoint in this review. The first topic is an activation of inactive MoO_x film to super-active olefin metathesis catalyst, where Mo=CHR sites are prepared on MoO_x. A total mechanism for the productive and the cross metathesis of propene was firstly established on an activated catalyst by using deuterium labeled olefins. In the second topic, a new concept of quasi-compounds is discussed by using scanning tunneling microscopy (STM), and it is shown that the reaction of quasi-compounds yields (Cu)₆ cluster and (–Cu–O–) strings on Ag(110). In the third topic, a self-activation of Pt–Rh alloy and Pt/Rh bimetallic surfaces during the reaction of NO + H₂ is discussed by using single crystal surfaces. STM image showed that a Pt–Rh(100) surface is activated by reacting with oxygen where a specific array of Pt and Rh atoms is established. Formation of similar active sites on the other crystallographic surfaces is responsible for structure insensitive catalysis of Pt/Rh bimetallic surfaces.     

Adsorption of 3d transition-metal atoms on two-dimensional penta-graphene: A first-principles study

The adsorption of single 3d transition metal (TM) atoms (from Sc to Zn) on a (3 × 3) penta-graphene (PG) sheet has been systematically studied by means of density-functional theory calculations. We particularly study the effect of the TM adatom on the structural, electronic, and magnetic properties when adsorbed on the PG sheet. Our calculations have shown that most of the TM adatoms are preferably adsorbed on the T₂ site (i.e., the top of the C₂ atom located at the bottom layer), while Cr, Zn, and Ni are preferably adsorbed on different B sites. The calculated band structures demonstrate that all TM-PG systems remain semiconductors such that the gap between the valence and conduction bands moves to a lower energy state relative to the Fermi level. For this reason, an apparent narrowing in the band gap values for the TM-PG systems has been predicted (0.11 – 0.97 eV) compared to the band gap of the isolated PG sheet (2.23 eV). Additionally, our results indicate that most of the TM-PG systems are magnetic, with the exception of Ni-PG and Zn-PG systems. Consequently, the engineering of the electronic properties of the TM-PG systems implies that such systems might be promising candidates for different applications.     

STM studies of photochemistry and plasmon chemistry on metal surfaces

We review our recent studies of photochemistry and plasmon chemistry of dimethyl disulfide, (CH₃S)₂, molecules adsorbed on metal surfaces using a scanning tunneling microscope (STM). The STM has been used not only for the observation of surface structures at atomic spatial resolution but also for local spectroscopies. The STM combined with optical excitation by light can be employed to investigate chemical reactions of single molecules induced by photons and localized surface plasmons. This technique allows us to gain insights into reaction mechanisms at a single molecule level. The experimental procedures to examine the chemical reactions using the STM are briefly described. The mechanism for the photodissociation reaction of (CH₃S)₂ molecules adsorbed on metal surfaces is discussed based on both the experimental results obtained with the STM and the electronic structures calculated by density functional theory. The dissociation reaction of the (CH₃S)₂ molecule induced by the optically excited plasmon in the STM junction between a Ag tip and metal substrate is also described. The reaction mechanism and pathway of this plasmon-induced chemical reaction are discussed by comparison with those proposed in plasmon chemistry.     

Ti vacancies on the (001) surface of TiS2 detected by scanning tunneling microscopy: A combined experimental and theoretical study

Various defects – either bright or dark triangular defects – are observed on the titanium disulfide surface (001) by ultra high vacuum scanning tunneling microscopy. The experimental interpretations of the images available in the literature suggest that a fraction of Ti atoms could be displaced from the octahedral site they occupied to vacant sites of the crystal structure, leading to more or less correlated defects. In this paper, we have performed ab initio periodic LCAO-B3LYP calculations on a (5 × 5) biperiodic supercell to model the electronic and geometrical involvements of Ti vacancies and to generate the theoretical STM images within the Tersoff–Hamann approximation. The relaxed structure of the Ti vacancy shows an inward movement of the neighboring sulfur atoms at the surface. However, the occupied vacancy electronic states at the Fermi level are mainly developed on the atomic orbitals of the first S neighbors at the surface, leading to bright triangular zones on the simulated image.     

Effect of surface composition on electronic structure, stability, and electrocatalytic properties of Pt-transition metal alloys: Pt-skin versus Pt-skeleton surfaces

The surface properties of PtM (M = Co, Ni, Fe) polycrystalline alloys are studied by utilizing Auger electron spectroscopy, low energy ion scattering spectroscopy, and ultraviolet photoemission spectroscopy. For each alloy initial surface characterization was done in an ultrahigh vacuum (UHV) system, and depending on preparation procedure it was possible to form surfaces with two different compositions. Due to surface segregation thermodynamics, annealed alloy surfaces form the outermost Pt-skin surface layer, which consists only platinum atoms, while the sputtered surfaces have the bulk ratio of alloying components. The measured valence band density of state spectra clearly shows the differences in electronic structures between Pt-skin and sputtered surfaces. Well-defined surfaces were hereafter transferred out from UHV and exposed to the acidic (electro)chemical environment. The electrochemical and post-electrochemical UHV surface characterizations revealed that Pt-skin surfaces are stable during and after immersion to an electrolyte. In contrast all sputtered surfaces formed Pt-skeleton outermost layers due to dissolution of transition metal atoms. Therefore, these three different near-surface compositions (Pt-skin, Pt-skeleton, and pure polycrystalline Pt) all having pure-Pt outermost layers are found to have different electronic structures, which originates from different arrangements of subsurface atoms of the alloying component. Modification in Pt electronic properties alters adsorption/catalytic properties of the corresponding bimetallic alloy. The most active systems for the electrochemical oxygen reduction reaction are established to be the Pt-skin near-surface composition, which also have the most shifted metallic d-band center position versus Fermi level.     

Photoelectron spectroscopy of silver clusters

A comparison of x-ray photoemission from Ag clusters deposited on polygraphite and highly oriented pyrolitic graphite shows the influence of the support both on the valence band and on the core 3d level of the metal. Positive shifts have been obtained with respect to the bulk for the Fermi edge and the 3d peaks depending on the number of silver atoms deposited on the substrates. When the deposition is very small (cluster regime) the positive shifts of the binding energies are quite different for different substrates and cannot have a common origin. In contrast with recent work, we show that several effects contribute to these shifts: initial state effects like charge redistribution as well as final state effects like the hole-electron interaction.     

Atomic Defects on the Surface of Quasi Two-Dimensional Layered Titanium Dichalcogenides: Stm Experiment and Quantum Chemical Simulation

The atomic surface structure of layered dichalcogenide 1T-TiSe₂ is studied by scanning tunneling microscopy (STM) at room temperature. In STM images, the ordered structures in the form of 6 ×6 ×6 triangles of Se atoms extending for 0.3 ±0.20 Å above the crystal surface are observed. The effect of a series of different atomic structural defects on the surface topology of titanium disulphide is modeled on the example of isostructural and isoelectronic 1T-TiS₂ system using the DFTB method. It is determined that a good agreement with the STM experiment is showed by the model of local 1T-TiS₂ packing defects, where the coordination of titanium atoms changes from the octahedral to the prismatic one. For these systems, the calculation results of the electronic structure and defect formation energy are also presented.     

Thomas–Fermi–Dirac models of atoms constrained by nuclear cusp and long-range conditions

The traditional Thomas–Fermi–Dirac model of the electronic structure for a neutral atom is deficient in that it predicts an infinite electron density at the nucleus and a sharp cutoff of the electron density at a finite radius. This study was carried out to remedy these faults in the model. Extending an idea used earlier in Thomas–Fermi (TF ) theory [Proc. Natl. Acad. Sci. U.S.A. 83 , 3577 (1985)], the Thomas–Fermi–Dirac (TFD ) energy functional is minimized under constraints ∫ρ( r ) d r = N, ∫e^?2kr▽²ρ( r )d r < ∞ and ∫(1 ? e^?k′r)ρ^4/3( r )d r < ∞, with k and k′ determined by the nuclear cusp condition and the correct asymptotic behavior. Optimum coordinate scaling also is considered. It is found that the TFD model is substantially improved by constraining the minimization search domain of the energy functional in this way. Energies are given for five noble gas atoms, and Compton profiles for these atoms are calculated. The behavior of electrons in momentum space is improved in both this modified TFD model and in the corresponding modified TF model.     

Difference in the Tunnel Current–Tunnel Gap Width Dependence of Molecule–Adsorbed and Non–Adsorbed Graphite Measured by Means of Tunnel Gap Imaging

The tunnel gap imaging (TGI) technique is used to measure local tunnel current (I) to tunnel gap width (s) dependences (the I–s characteristics) of molecule–adsorbed and non–adsorbed surface of highly orientated pyrolytic graphite under atmosphere. When the bias voltage of several hundreds of millivolts were applied to the sample, the I–s characteristics of molecule–adsorbed sample exhibited clear bending while those of non–adsorbed sample did not. The I–s characteristics at small s region were found to be similar to those of non–adsorbed sample, but those at large s regions were absolutely different. Barrier heights calculated from the I–s characteristics at large s region for the molecule–adsorbed sample were found to be 2 or 3 orders lower than those at small s region were. The tunnel current dominant at large s region was estimated to be the inelastic tunnel current by its bias voltage dependence. The mechanism of molecular image formation in STM is discussed based on the presence of the inelastic tunnel current.     

Chemical analysis of PtxNi1−x alloy single crystal surfaces by scanning tunnelling microscopy

Two STM investigations are presented, in which irregular tip conditions enable direct access to chemical and structural information of a surface on an atomic scale, otherwise invisible for the STM. They allow a study of surface ordering of a Pt₂₅Ni₇₅(111) crystal by chemical contrast between the alloy components, and a study of carbon superstructures on a Pt₁₀Ni₉₀(100) surface by simultaneous imaging of substrate lattice and carbon atoms. All these images were obtained at very low tunnelling resistances and thus at small tip-sample distances. A chemical interaction between the probably adsorbate covered tip and the sample is proposed to explain these images.