Fourier Transform Spectroscopy of theYΣ–XΠiTransition of CuO

TheY²Σ⁺–X²Π_inear-infrared electronic transition of CuO was observed at high resolution for the first time. The spectrum was recorded with the Fourier transform spectrometer associated with the McMath–Pierce Solar Telescope at Kitt Peak. The excited CuO molecules were produced in a low pressure copper hollow cathode sputter with a slow flow of oxygen. Constants for theY²Σ⁺states of CuO are:T₀= 7715.47765(54) cm⁻¹,B= 0.4735780(28) cm⁻¹,D= 0.822(12) × 10⁻⁶cm⁻¹,H= 0.46(10) × 10⁻¹⁰cm⁻¹, γ = −0.089587(42) cm⁻¹, γ_D= 0.1272(79) × 10⁻⁶cm⁻¹,b_F= 0.12347(22) cm⁻¹, andc= 0.0550(74) cm⁻¹. ImprovedX²Π_iconstants are also presented.     

Growth and characterization of DyP/GaAs and DyAs/GaAs-based heterostructures and superlattices

Details of the structural and electrical properties of epitaxial DyP/GaAs and DyAs/GaAs is reported. DyP is lattice matched to GaAs, with a room temperature mismatch of less than 0.01%. DyAs, on the other hand, has a mismatch of nearly 2.4%. Both DyP and DyAs have been grown by solid source MBE using custom designed group V thermal cracker cells and group III high-temperature effusion cells. High-quality DyP and DyAs epilayers, as determined by XRD, TEM, and AFM analysis, were obtained for growth temperatures ranging from 500°C to 600°C with growth rates between 0.5 and 0.7 μm/h. The DyP epilayers are n-type with measured electron concentrations of the order of 3×10²⁰ to 4×10²⁰ cm⁻³, with room temperature mobilities of 250–300 cm²/V s, and with a barrier height of 0.75 eV to GaAs. The DyAs epilayers are also n-type with concentration of 1×10²¹ to 2×10²¹ cm⁻³, with mobilities between 25 and 40 cm²/V s. DyP is stable in air with no apparent oxidation taking place, even after months of ambient exposure to untreated air.     

Rotational absorption spectrum of methylene fluoride in the 20–100 cm region

The pure rotational spectrum of CH₂F₂ was recorded in the 20–100 cm⁻¹ spectral range and analyzed to obtain rotation and centrifugal distortion constants. Analysis of the data yielded rotation constants: A = 1.6392173 ± 0.0000015, B = 0.3537342 ± 0.00000033, C = 0.3085387 ± 0.00000027, τ_aaaa = −(7.64 ± 0.46) × 10⁻⁵, τ_bbbb = −(2.076 ± 0.016) × 10⁻⁶, τ_cccc = −(9.29 ± 0.12) × 10⁻⁷, T₁ = (4.89 ± 0.20) × 10⁻⁶, and T₂ = −(1.281 ± 0.016) × 10⁻⁶cm⁻¹.     

Analysis of the 2ν3 band of CD3F at 5.06 μm recorded under high resolution

The 2ν₃(A₁) band of ¹²CD₃F near 5.06 μm has been recorded with a resolution of 20–24 × 10⁻³ cm⁻¹. The value of the parameter (α^B − α^A) for this band was found to be very small and, therefore, the K structure of the R(J) and P(J) manifolds was unresolved for J < 15 and only partially resolved for larger J values. The band was analyzed using standard techniques and values for the following constants determined: ν₀ = 1977.178(3) cm⁻¹, B″ = 0.68216(9) cm⁻¹, D″_J = 1.10(30) × 10⁻⁶ cm⁻¹, α^B = (B″ − B′) = 3.086(7) × 10⁻³ cm⁻¹, and β^J = (D″_J − D′_J) = −3.24(11) × 10⁻⁷ cm⁻¹. A value of α^A = (A″ − A′) = 2.90(5) × 10⁻³ cm⁻¹ has been obtained through band contour simulations of the R(J) and P(J) multiplets.     

High Resolution Study of Deuterated Hydrogen Sulfide in the Region 2400-3000 cm

High resolution Fourier transform spectra of deuterated hydrogen sulfide have been recorded in the region 2400-3000 cm⁻¹. Rotational structures of the ν₁ + ν₂, ν₂ + ν₃ bands of D₂³²S, of the ν₃ and ν₁ + ν₂ bands of HD³²S, and of the ν₁ + ν₂ band of HD³⁴S were analyzed. Band centers and rotational, centrifugal distortion, and resonance parameters were obtained, which reproduce the initial values of the upper energy levels within a mean accuracy of 1.39 × 10⁻⁴ cm⁻¹ for the states (110) and (011) of D₂³²S, 1.61 × 10⁻⁴ cm⁻¹ and 1.82 × 10⁻⁴ cm⁻¹ for the states (001) and (110) of HD³²S, and 2.09 × 10⁻⁴ cm⁻¹ for the state (110) of HD³⁴S, respectively.     

Ge quantum dots on a large band gap semiconductor: the first growth stages on 4H–SiC(0 0 0 1)

The Ge growth on SiC(0 0 0 1) follows a Stranski–Krastanov mode for Si-rich (3×3) and reconstructed surfaces. For Ge deposit in particular temperature conditions, a new (4×4) superstructure takes place and the reflection high energy electron diffraction (RHEED) specular spot intensity presents one oscillation proving a wetting layer formation. An island nucleation is then ascertained by the oscillation vanishing and by the appearance of a k-modulated RHEED pattern. On the other hand, on a C-rich surface, a direct Ge island nucleation is observed from the first growth stage. Indeed, for 1 ML Ge, the RHEED diagram consists in spots and rings, and the atomic force microscopy analysis indicates a high density (8×10¹⁰ cm⁻²) of small islands (30 nm, h3 nm). The RHEED spot analysis shows a preferential epitaxial relationship with the substrate Ge(1 1 1)//SiC(0 0 0 1). The Ge–C bonding being energetically unfavourable, Ge tends to form islands immediately rather than wetting the graphite-terminated surface. The Ge growth mode on C-rich surface is thus of Volmer–Weber type.     

The bending energy levels of C2H2

Absorption spectra of C₂H₂ have been recorded between 50 and 1450 cm⁻¹, with a resolution always better than 0.005 cm⁻¹, using two different Fourier transform spectrometers. Analysis of the data provided two sets of results. First, the bending levels with Σ_t V_t(t = 4, 5) ≤ 2 were characterized by a coherent set of 34 parameters derived from the simultaneous analysis of 15 bands, performed using a matrix Hamiltonian. The following main parameters were obtained (in cm⁻¹): ω₄⁰ = 608.985196(14), ω₅⁰ = 729.157564(10); B₀ = 1.17664632(18), α₄ = −1.353535(86) × 10⁻³, α₅ = −2.232075(40) × 10⁻³; q₄⁰ = 5.24858(12) × 10⁻³, and q₅⁰ = 4.66044(12) × 10⁻³, with the errors (1σ) on the last quoted digit. Second, a more complete set of bending levels with Σ_t V_t ≤ 4, some of which have never previously been reported, and also including V₂ = 1 have been fitted to 80 parameters. This simultaneous fit involved 43 bands and used the same full Hamiltonian matrix. Some perturbations which affect the higher excited levels are discussed.     

Spectral characterization and energy levels of Cr:Sc2(MoO4)3 crystal

This paper reports the spectral properties and energy levels of Cr³⁺:Sc₂(MoO₄)₃ crystal. The crystal field strength Dq, Racah parameter B and C were calculated to be 1408 cm⁻¹, 608 cm⁻¹ and 3054 cm⁻¹, respectively. The absorption cross sections σ_α of ⁴A₂→⁴T₁ and ⁴A₂→⁴T₂ transitions were 3.74×10⁻¹⁹ cm² at 499 nm and 3.21×10⁻¹⁹ cm² at 710 nm, respectively. The emission cross section σ_e was 375×10⁻²⁰ cm² at 880 nm. Cr³⁺:Sc₂(MoO₄)₃ crystal has a broad emission band with a broad FWHM of 176 nm (2179 cm⁻¹). Therefore, Cr³⁺:Sc₂(MoO₄)₃ crystal may be regarded as a potential tunable laser gain medium.     

Structural properties of 10 μm thick InN grown on sapphire (0001)

The structural properties of a 10 μm thick In-face InN film, grown on Al₂O₃ (0001) by radio-frequency plasma-assisted molecular beam epitaxy, were investigated by transmission electron microscopy and high resolution x-ray diffraction. Electron microscopy revealed the presence of threading dislocations of edge, screw and mixed type, and the absence of planar defects. The dislocation density near the InN/sapphire interface was 1.55×10¹⁰ cm⁻², 4.82×10⁸ cm⁻² and 1.69×10⁹ cm⁻² for the edge, screw and mixed dislocation types, respectively. Towards the free surface of InN, the density of edge and mixed type dislocations decreased to 4.35×10⁹ cm⁻² and 1.20×10⁹ cm⁻², respectively, while the density of screw dislocations remained constant. Using x-ray diffraction, dislocations with screw component were found to be 1.2×10⁹ cm⁻², in good agreement with the electron microscopy results. Comparing electron microscopy results with x-ray diffraction ones, it is suggested that pure edge dislocations are neither completely randomly distributed nor completely piled up in grain boundaries within the InN film.     

In-plane gate transistors in AlxGa1−xN/GaN heterostructures written by focused ion beams

Focused ion beam implantation of gallium and dysprosium was used to locally insulate the near-surface two-dimensional electron gas of Al_xGa_1−xN/GaN heterostructures. The threshold dose for insulation was determined to be 2×10¹⁰ cm⁻¹ for 90 keV Ga⁺ and 1×10⁹ cm⁻¹ for 200 keV Dy²⁺ at 4.2 K. This offers a tool not only for inter-device insulation but also for direct device fabrication. Making use of “open-T” like insulating line patterns, in-plane gate transistors have been fabricated by focused ion beam implantation. An exemplar with a geometrical channel width of 1.5 μm shows a conductance of 32 μS at 0 V gate voltage and a transconductance of around 4 μS, which is only slightly dependent on the gate voltage.     

Line Positions and Intensities of the ν1+ ν2+ 3ν3, ν2+ 4ν3, and 3ν1+ 2ν2Bands of Ozone

Using a Fourier transform spectrometer, we have recorded the spectra of ozone in the region of 4600 cm⁻¹, with a resolution of 0.008 cm⁻¹. The strongest absorption in this region is due to the ν₁+ ν₂+ 3ν₃band which is in Coriolis interaction with the ν₂+ 4ν₃band. We have been able to assign more than 1700 transitions for these two bands. To correctly reproduce the calculation of energy levels, it has been necessary to introduce the (320) state which strongly perturbs the (113) and (014) states through Coriolis- and Fermi-type resonances. Seventy transitions of the 3ν₁+ 2ν₂band have also been observed. The final fit on 926 energy levels withJ_max= 50 andK_max= 16 gives RMS = 3.1 × 10⁻³cm⁻¹and provides a satisfactory agreement of calculated and observed upper levels for most of the transitions. The following values for band centers are derived: ν₀(ν₁+ ν₂+ 3ν₃) = 4658.950 cm⁻¹, ν₀(3ν₁+ 2ν₂) = 4643.821 cm⁻¹, and ν₀(ν₂+ 4ν₃) = 4632.888 cm⁻¹. Line intensities have been measured and fitted, leading to the determination of transition moment parameters for the two bands ν₁+ ν₂+ 3ν₃and ν₂+ 4ν₃. Using these parameters we have obtained the following estimations for the integrated band intensities,S_V(ν₁+ ν₂+ 3ν₃) = 8.84 × 10⁻²²,S_V(ν₂+ 4ν₃) = 1.70 × 10⁻²², andS_V(3ν₁+ 2ν₂) = 0.49 × 10⁻²²cm⁻¹/molecule cm⁻²at 296 K, which correspond to a cutoff of 10⁻²⁶cm⁻¹/molecule cm⁻².     

High-resolution infrared and millimeterwave spectra of the v3=1 vibrational state of NF3 at 907 cm

The ν₃^±1 perpendicular band of ¹⁴NF₃ ( cm⁻¹) has been studied with a resolution of 2.5 × 10⁻³ cm⁻¹, and 3682 infrared (IR) transitions (J_max=55, K_max=45) have been assigned. These transitions were complemented by 183 millimeterwave (MMW) rotational lines (J_max=25, K_max=19) in the 150–550 GHz region (precision 50–100 kHz). The kl=+1 level reveals a strong A₁/A₂ splitting due to the l(2,2) rotational interaction (q=−4.05 × 10⁻³ cm⁻¹) while the kl=−2 and +4 levels exhibit small A₁/A₂ splittings due to l(2,−4) and l(0,6) rotational interactions. All these splittings were observed by both experimental methods. Assuming the v₃=1 vibrational state as isolated, a Hamiltonian model of interactions in the D reduction, with l(2,−1) rotational interaction (r=−1.96 × 10⁻⁴ cm⁻¹) added, accounted for the observations. A set of 26 molecular constants reproduced the IR observations with σ_IR=0.175 × 10⁻³ cm⁻¹ and the MMW data with σ_MMW=134 kHz. The Q reduction was also performed and found of comparable quality while the QD reduction behaved poorly. This may be explained by a predicted Coriolis interaction between v₃=1 and v₁=1 (A₁, 1032.001 cm⁻¹) which induces a slow convergence of the Hamiltonian in the QD reduction but has no major influence on the other reductions. The experimental equilibrium structure could be calculated as: r_e(N–F)=1.3676 Å and (FNF)=101.84°.     

Effect of oxygen partial pressure on the structural and optical properties of dc reactive magnetron sputtered molybdenum oxide films

Molybdenum oxide films (MoO₃) were deposited on glass and crystalline silicon substrates by sputtering of molybdenum target under various oxygen partial pressures in the range 8 × 10⁻⁵–8 × 10⁻⁴ mbar and at a fixed substrate temperature of 473 K employing dc magnetron sputtering technique. The influence of oxygen partial pressure on the composition stoichiometry, chemical binding configuration, crystallographic structure and electrical and optical properties was systematically studied. X-ray photoelectron spectra of the films formed at 8 × 10⁻⁵ mbar showed the presence of Mo⁶⁺ and Mo⁵⁺ oxidation states of MoO₃ and MoO_3−x. The films deposited at oxygen partial pressure of 2 × 10⁻⁴ mbar showed Mo⁶⁺ oxidation state indicating the films were nearly stoichiometric. It was also confirmed by the Fourier transform infrared spectroscopic studies. X-ray diffraction studies revealed that the films formed at oxygen partial pressure of 2 × 10⁻⁴ mbar showed the presence of (0 k 0) reflections indicated the layered structure of α-phase MoO₃. The electrical conductivity of the films decreased from 3.6 × 10⁻⁵ to 1.6 × 10⁻⁶ Ω⁻¹ cm⁻¹, the optical band gap of the films increased from 2.93 to 3.26 eV and the refractive index increased from 2.02 to 2.13 with the increase of oxygen partial pressure from 8 × 10⁻⁵ to 8 × 10⁻⁴ mbar, respectively.     

A new electronic transition of antimony chloride in the visible region

The emission spectrum of SbCl has been photographed at high resolution in the region 400 to 640 nm. In addition to bands of two previously reported transitions in this region, A₁-X and A₂-X, 36 bands of a new system have been identified. A vibrational analysis has been made with ν₀₀ ≈ 20 679 cm⁻¹, and 7 of the bands have been rotationally analyzed. The electronic transition has ΔΩ = 0 with lower state constants which match published data for the ground state X³Σ⁻(0⁺). The upper state is characterized by the following ¹²¹Sb³⁵Cl molecular parameters: B′₀ = 0.0922 cm⁻¹, D′₀ = 3.1 × 10⁻⁸ cm⁻¹.     

Preparation and electrical properties of a pyrochlore-related Ce2Zr2O8−x phase

A pyrochlore-related Ce₂Zr₂O_8−x phase has been prepared in a reduction reoxidation process from Ce_0.5Zr_0.5O₂ powders. Ce₂Zr₂O_8−x, based on a cubic symmetry with a=1.053 nm, decomposes in nitrogen at 800 °C, but remains stable up to 900 °C in air. It shows mixed oxygen ionic and electronic conductivity. The bulk conductivity at 700 °C is 4×10⁻⁴ S cm⁻¹ in air and 1×10⁻² S cm⁻¹ in nitrogen, and the activation energy is 1.27 eV in air. In nitrogen, the Arrhenius law is not obeyed, and a curved plot was obtained from 400 to 700 °C; then, the conductivity decreased rapidly due to the thermal decomposition of Ce₂Zr₂O_8−x.     

The 2ν8 Band of CH3CN

The overtone band 2ν⁰₈ of CH₃CN around 720 cm⁻¹ has been measured on a Bruker Fourier transform spectrometer at a resolution of 0.003 cm⁻¹. Only the parallel band was observed, but due to the l(2, 2) resonance, ΔK = −2 lines leading to the v₈ = 2, l₈ = −2 levels with K = 1-3 could be seen. More information for the l₈ = ±2 component of the vibrational state v₈ = 2 was evaluated from the hot band 2ν^±2₈ - ν^±1₈. Altogether more than 1000 lines were assigned. In the fit pure rotational lines from literature were also combined. Among the results the anomalous A₀ - A′ values 4.6722(13) × 10⁻³ cm⁻¹ for the 2ν⁰₈ band and 7.0324(32) × 10⁻³ cm⁻¹ for the 2ν^±2₈ band are striking.     

Line strength measurements of carbonyl sulfide (OCS) in the 2v3, v1+2v2+v3, and 4v2+v3 bands

To support planetary studies of the Venus atmosphere, we measured line strengths of the 2v₃, v₁+2v₂+v₃, and 4v₂+v₃ bands of the primary isotopologue of carbonyl sulfide (¹⁶O¹²C³²S), whose band centers are located at 4101.387, 3937.427, and 4141.212 cm⁻¹, respectively. For this, infrared absorption spectra in normal carbonyl sulfide (OCS) sample gas were recorded at an unapodized resolution of 0.0033 cm⁻¹ at ambient room temperatures using a Bruker Fourier transform spectrometer (FTS) at the Jet Propulsion Laboratory. The FTS instrumental line shape (ILS) function was investigated, which revealed no significant instrumental line broadening or distortions. Various custom-made short cells and a multi-pass White cell were employed to achieve optical densities sufficient to observe the strong 2v₃ and the weaker bands in the region. Gas sample impurities and the isotopic abundances were determined from mass spectrum analysis. Line strengths were retrieved spectrum by spectrum using a non-linear curve fitting algorithm adopting a standard Voigt line profile, from which Herman–Wallis factors were derived for the three bands. The band strengths of 2v₃, v₁+2v₂+v₃, and 4v₂+v₃ of ¹⁶O¹²C³²S (normalized at 100% of isotopologue) are observed to be 6.315(13)×10⁻¹⁹, 1.570(2)×10⁻²⁰, and 7.949(20)×10⁻²¹ cm⁻¹/molecule cm⁻², respectively, at 296 K. These results are compared with earlier measurements and the HITRAN 2004 database.     

High sensitivity CW-cavity ring down spectroscopy of CO2 near 1.35 μm (I): line positions

The absorption spectrum of carbon dioxide in natural isotopic abundance has been investigated by CW-cavity ring down spectroscopy with a new setup based on fibred distributed feedback (DFB) laser diodes. By using a series of 25 DFB lasers, the CO₂ spectrum was recorded in the 7123–7793 cm⁻¹ region with a typical sensitivity of 3×10⁻¹⁰ cm⁻¹. A 2125 transitions with intensities as low as 1×10⁻²⁹ cm/molecule were detected and assigned to the ¹²C¹⁶O₂, ¹⁶O¹²C¹⁷O and ¹⁶O¹²C¹⁸O isotopologues. For comparison, only 357 of them were previously reported from Venus spectra and 344 transitions were included in the 2004 version of the HITRAN database. The band by band analysis has led to the determination of the rovibrational parameters of 28, 2 and 6 bands for the ¹²C¹⁶O₂, ¹⁶O¹²C¹⁷O and ¹⁶O¹²C¹⁸O isotopologue, respectively. While the uncertainty on the experimental line positions is on the order of 5×10⁻⁴ cm⁻¹, the average deviation from the ¹²C¹⁶O₂ calculated values provided by the most recent version of the carbon dioxide spectroscopic databank (CDSD) is −2.8×10⁻³ cm⁻¹ with an root mean square (rms) deviation of 3.5×10⁻³ cm⁻¹. Maximum deviations in the order of 0.02 and 0.12 cm⁻¹ were evidenced for some bands of the ¹⁶O¹²C¹⁷O and ¹⁶O¹²C¹⁸O minor isotopologues. The obtained results improve significantly the previous measurements from Venus spectra and will be valuable to refine the sets of effective Hamiltonian parameters used to generate the CDSD database.     

The effects of GaN capping layer thickness on two-dimensional electron mobility in GaN/AlGaN/GaN heterostructures

In this paper we present a study of the effect of GaN capping layer thickness on the two-dimensional (2D)-electron mobility and the two-dimensional electron gas (2DEG) sheet density which is formed near the AlGaN barrier/buffer GaN layer. This study is undertaken using a fully numerical calculation for GaN/Al_xGa_1−xN/GaN heterostructures with different Al mole fraction in the Al_xGa_1−xN barrier, and for various values of barrier layer thickness. The results of our analysis clearly indicate that increasing the GaN capping layer thickness leads to a decrease in the 2DEG density. Furthermore, it is found that the room-temperature 2D-electron mobility reaches a maximum value of approximately 1.8×10³ cm² /Vs⁻¹ for GaN capping layer thickness grater than 100 Å with an Al_0.32Ga_0.68N barrier layer of 200 Å thick. In contrast, for same structure, the 2DEG density decreases monotonically with GaN capping layer thickness, and eventually saturates at approximately 6×10¹² cm⁻² for capping layer thickness greater than 500 Å. A comparison between our calculated results with published experimental data is shown to be in good agreement for GaN capping layers up to 500 Å thickness.