InGaAsSb/AlGaAsSb长波长多量子阱激光器有源区的优化设计

系统地研究了波长为2.7μm的InGaAsSb/AlGaAsSb多量子阱激光器中有源区的优化设计.分别用含应变势的6带KP模型和抛物带模型计算价带和导带的能带结构，并得到薛定谔方程和泊松方程的自洽解，由此计算量子阱在载流子注入时的增益谱.研究表明制约量子阱增益的主要因素不是跃迁矩阵元，而是粒子数反转程度，尤其是空穴填充HH1子带的概率.增加压应变或减小阱宽都会提高量子阱增益.前者降低了价带HH1子带空穴的平面内有效质量；后者拉大了价带子带间距，尽管它同时略微增加了空穴有效质量.这两种因素都导致价带顶空穴态     

Band structures and characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers

Analysis is performed for valence band structures and some characteristics of InGaAs/InGaAsP strain-compensated quantum well lasers lattice-matched to InP substrate. The computed results show that band offsets are functions of strain compensation instead of constants; strain compensation changes the band structures and the density of states, and hence affects the optical gain and the threshold current density. Under the condition of zero net strain, the values of the well width, cavity length and relative threshold carrier density and threshold current density are determined for realization of 1.55 m wavelength emission.     

近800 nm波长张应变GaAsP/AlGaAs量子阱激光器有源区的设计

张应变GaAs_1-xP_x量子阱是高性能大功率半导体激光器的核心有源区,基于能带结构分析优化其结构参数具有重要的应用指导意义.首先,基于6×6 Luttinger-Kohn模型,采用有限差分法计算了张应变GaAs_1-xP_x量子阱的能带结构,得到了第一子带间跃迁波长固定为近800 nm时的阱宽-阱组分关系,即随着阱组分x的增加,需同时增大阱宽,且阱宽较大时靠近价带顶的是轻空穴第一子带lh₁,阱宽较小时靠近价带顶的是重空穴第一子带hh₁.计算并分析了导带第一子带c₁到价带子带lh₁和hh₁的跃迁动量矩阵元.针对808 nm量子阱激光器,模拟计算了阈值增益与阱宽的关系,得到大阱宽有利于横磁模激射,小阱宽有利于横电模激射.进一步考虑了自发辐射和俄歇复合之后,模拟计算了808 nm量子阱激光器的阱宽与阈值电流密度的关系,阱宽较大时载流子对高能级子带的填充使得阈值电流密度增加,而阱宽较小时则是低的有源区光限制因子导致阈值电流密度升高,因此存在一最佳的阱宽-阱组分组合,可使阈值电流密度达到最小.本文的模拟结果可对张应变GaAs_1-xP_x量子阱激光器的理论分析和结构设计提供理论指导.     

InGaAs/GaAs应变量子阱激光器线宽展宽因子的理论研究

详细地介绍了计算线宽展宽因子(α因子)的理论基础及推导过程, 建立了α因子的简便模型. 该模型分别考虑了带间跃迁、带隙收缩和自由载流子效应对α因子的影响, 利用不同载流子浓度下的增益曲线得到光子能量随载流子浓度的变化速率以及微分增益, 进而对α因子进行近似计算. 模拟计算了InGaAs/GaAs量子阱激光器的增益曲线及α 因子的大小, 计算结果与文献报道的实验值相符. 进一步讨论了InGaAs/GaAs量子阱阱宽及In组分对α 因子的影响. 结果表明, α 因子随In组分和阱宽的增加而增加.     

InGaAsSb/GaSb量子阱能带结构及自发发射谱

讨论了不同In组分对InGaAsSb/GaSb量子阱能带结构,即带隙及带边不连续性(带阶)的影响。给出了较为精准的InGaAsSb禁带宽度与In组分的关系。分析了In组分对InGaAsSb/GaSb导带、价带带阶的作用。研究表明,随In组分的增加,InGaAsSb禁带宽度减小,应力加大,能带漂移增大,InGaAsSb/GaSb导带、价带的带阶减小。同时,利用上述研究结果合理地解释了InGaAsSb/GaSb自发发射谱的增益、发射峰位及半峰宽与In组分关系。研究In组分对InGaAsSb/GaSb量子阱能带结构及自发发射谱的影响,可以定性地解释已有的实验报道。     

Exotic electronic states in the world of flat bands:From theory to material

It has long been noticed that special lattices contain single-electron flat bands(FB) without any dispersion. Since the kinetic energy of electrons is quenched in the FB, this highly degenerate energy level becomes an ideal platform to achieve strongly correlated electronic states, such as magnetism, superconductivity, and Wigner crystal. Recently, the FB has attracted increasing interest because of the possibility to go beyond the conventional symmetry-breaking phases towards topologically ordered phases, such as lattice versions of fractional quantum Hall states. This article reviews different aspects of FBs in a nutshell. Starting from the standard band theory, we aim to bridge the frontier of FBs with the textbook solidstate physics. Then, based on concrete examples, we show the common origin of FBs in terms of destructive interference,and discuss various many-body phases associated with such a singular band structure. In the end, we demonstrate real FBs in quantum frustrated materials and organometallic frameworks.     

The effects of indium segregation on the valence band structure and optical gain of GaInAs/GaAs quantum wells

The effects of indium segregation on the valence band structures and the optical gain in GaInAs/GaAs quantum wells are theoretically investigated using 4×4 Luttinger–Kohn Hamiltonian matrix. The method for the band structure calculation is based on the finite difference method, then the optical gain is calculated using the density matrix approach. For segregation coefficient R less than 0.7, indium segregation has little influence on optical gain, but for segregation coefficient R more than 0.7, it has a significant influence on optical gain, the gain spectra can be blue-shifted with the increase of segregation coefficient R, and the peak gains are decreased as segregation coefficient R increases, which is mainly due to the reduction of the carrier population inversion.     

Monolithic integration of electroabsorption modulators and tunnel injection distributed feedback lasers using quantum well intermixing

Electroabsorption modulators combining Franz-Keldysh effect and quantum confined Stark effect have been monolithically integrated with tunnel-injection quantum-well distributed feedback lasers using a quantum well intermixing method.Superior characteristics such as extinction ratio and temperature insensitivity have been demonstrated at wide temperature ranges.     

Dual-beam ablation of fused quartz using 266 nm and VUV lasers with different delay-times

Received: 20 August 1996/Accepted: 5 November 1996     

Characterisation of the influence of multi-quantum barrier reflectors within GaInP/AlGaInP quantum well lasers using near-field imaging techniques

Using a near-field scanning optical microscope, near-field photocurrent and topographic imaging has measured the effect on intrinsic electric fields and photocurrent propagation resulting from inserting multi-quantum barrier (MQB) super-lattices into quantum well lasers. Measurements on devices at two different excitation wavelengths have highlighted the sensitivity of the near-field optical technique. Strong correlations were seen in the photocurrent response of the multi-quantum barrier regions when compared with simulations made on the electric field generated within the structure. As a result, photocurrent attenuation was attributed to carrier confinement in these barrier regions when compared to a control sample. The measurements illustrate the effectiveness of the MQB, in addition to the sensitivity and power of the near-field photocurrent technique.     

Improvement of signal-to-noise ratio by stochastic resonance in sigmoid function threshold systems, demonstrated using a CMOS inverter

Stochastic resonance (SR) has become a well-known phenomenon that can enhance weak periodic signals with the help of noise. SR is an interesting phenomenon when applied to signal processing. Although it has been proven that SR does not always improve the signal-to-noise ratio (SNR), in a strongly nonlinear system such as simple threshold system, SR does in fact improve SNR for noisy pulsed signals at appropriate noise strength. However, even in such cases, when noise is weak, the SNR is degraded. Since the noise strength cannot be known in advance, it is difficult to apply SR to real signal processing. In this paper, we focused on the shape of the threshold at which SR did not degrade the SNR when noise was weak. To achieve output change when noise was weak, we numerically analyzed a sigmoid function threshold system. When the slope around the threshold was appropriate, SNR did not degrade when noise was weak and instead was improved at suitable noise strength. We also demonstrated SNR improvement for noisy pulsed voltages using a CMOS inverter, a very common threshold device. The input-output property of a CMOS inverter resembles the sigmoid function. By inputting the noisy signal voltage to a CMOS inverter, we measured the input and output voltages and analyzed the SNRs. The results showed that SNR was effectively improved over a wide range of noise strengths.     

不确定时滞混沌系统的自适应动态神经网络控制

研究了一类具有不确定时滞的非自治混沌系统的控制问题. 通过结合Lyapunov-Krasovskii函数和Lyapunov函数设计参数可调的不确定时滞补偿器,使得反馈控制输入信号不受时延的影响;同时引入动态结构自适应神经网络,以消除系统的不确定性,其隐层神经元的个数可以随着逼近误差的增大而自适应增加,改善了逼近速度与网络复杂度的关系;最后,用Duffing混沌系统的控制仿真示例表明该方法的有效性. 关键词： 混沌系统 自适应控制 不确定时滞 动态结构神经网络