二维光子晶体量子阱的光谱特性研究

研究了二维光子晶体量子阱的光谱特性,该量子阱结构由二维正方晶格圆柱晶胞光子晶体通过移去中间位置的介质圆柱层形成。由于光子晶体中的光子禁带充当了光子运动的势垒,类似于半导体量子阱中电子的行为,在光子晶体量子阱结构中会出现量子化的光子能态。文章利用平面波展开法计算了所用光子晶体的能带结构,利用传输矩阵方法计算了量子阱结构的透射光谱。计算结果表明,在光子禁带中出现了离散的透射峰,透射峰的强度随着势垒宽度的增加而减弱,个数随着势阱宽度的增加而增加,通过计算得到了其定量关系,并且讨论了透射峰频率与势阱宽度的关系。     

单负材料组成一维光子晶体双量子阱结构的共振模

通过传输矩阵方法, 计算模拟了两种单负材料组成一维光子晶体双量子阱结构的透射谱. 研究发现: 由于双量子阱结构双阱之间的相互耦合作用, 共振模发生双重劈裂, 共振峰之间的距离可以通过调节双阱之间的耦合强度控制, 共振模的品质因子可以通过调节外部障碍光子晶体的周期数控制. 并且, 共振模受入射角和光偏振模式的影响都比较小, 适合全方向滤波. 当考虑两种单负材料不同损耗的影响时, 研究结果表明, 电损耗对低频处的共振模影响大, 而磁损耗对高频和低频处的共振模影响都比较大.     

单负材料组成光子晶体的多量子阱结构

通过传输矩阵法,对负介电常数材料和负磁导率材料组成一维光子晶体的多量子阱结构的共振隧穿特性进行了研究。结果表明,该结构中存在不受入射角和偏振模式影响的全方向共振隧穿模,其数量可以通过调节结构周期数来实现。共振峰的品质因子可以由外部障碍光子晶体的厚度比例调整。在研究单负材料损耗时,发现电损耗对低频处共振模影响大,而磁损耗对高频和低频处都有较大影响。     

色散光子晶体GHz波段的传输特性

将两单负材料耦合后,再与一双负材料交替生成光子晶体。然后利用传输矩阵法对该光子晶体的能带和缺陷模进行了研究。结果表明:这种结构的光子晶体具有一种新型的光子带隙,不随晶格常数的缩放而移动;当引入普通电介质缺陷层时,缺陷模对入射角的改变不敏感,但缺陷模个数随着缺陷层厚度的增加而增多。     

二维正方晶格光子晶体禁带特性

基于平面波展开法,以碳化硅构成二维正方晶格光子晶体,数值模拟了TE模、TM模二维光子晶体的禁带特性,结果表明,TE模更容易形成光子禁带。同时设计了以碳化硅构成二维正方晶格光子晶体波导,数值模拟了TE模、TM模波导的传输特性和禁带特性,结果表明,TE模构成的波导电磁波能够较好的传播,它们的光子禁带都没有出现。研究结论为光子晶体波导器件的开发提供参考。     

恒定电场下双磁垒结构中的电子输运行为

对磁量子结构中电子在外加恒定电场下的输运性质进行了研究.分别计算了电子隧穿相同磁垒磁阱和不同磁垒磁阱构成的两种磁量子结构的传输概率和电流密度.计算结果表明,在相当宽广的非共振电子入射能区,外加电场下电子的传输概率比无电场时增加.对于电子隧穿相同磁垒磁阱构成的双磁垒结构,共振减弱;对于电子隧穿不同磁垒磁阱构成的双磁垒结构,无电场作用时的非完全共振在适当的偏置电压下转化为完全共振,这时的电子可实现理想的共振隧穿.研究同时表明,磁量子结构中存在着显著的量子尺寸效应和负微分电导.     

光子晶体双量子阱的共振隧穿

采用R矩阵法研究了二维光子晶体双量子阱的共振隧穿特性.研究发现:光子晶体双量子阱的共振频率可以通过调节双阱的耦合强度来控制;对称双量子阱中,共振峰发生双劈裂;不对称双量子阱,共振劈裂消失.但是,由改变左手介质和右手介质在双阱中的排列顺序产生的阱介质不对称阱的共振劈裂消失与阱宽不对称的双阱产生的共振劈裂消失不一样.进一步对一维光子晶体量子阱分析后发现,前者是由光在左右手介质中传播的能流方向相反产生干涉相消而引起;后者是由阱宽不同,阱的本征模不一样而引起. 关键词： 光子晶体 双量子阱 R矩阵')" href="#">R矩阵 左手介质     

单负材料光子晶体异质结构的频率响应

用传输矩阵方法研究了由两种单负材料构成的光子晶体异质结构的透射特性.结果表明，当异质结构具有零有效折射率时，由于迅衰场表面模共振耦合，在异质结构双周期光子晶体的每一个分界面上都会出现隧穿模.零有效折射率隧穿模不受入射角、电磁波偏振态、结构周期数和晶格常数标度等因素影响，并且具有零相位延迟，这一特性可用来设计零相位延迟全向多通道滤波器件.而位于中心两侧的隧穿模随入射角、结构周期数和晶格常数标度的减小都统一由中心向两侧移动. 关键词： 单负材料 异质结构 传输矩阵     

双重势垒一维光子晶体量子阱的光传输特性研究

利用传输矩阵法,研究单势垒和双重势垒一维光子晶体量子阱结构的光传输特性.结果表明:垒层折射率总和大的单势垒光量子阱的透射峰更加精细,内部局域电场更加强;双重势垒光量子阱的透射峰比单势垒光量子阱的透射峰精细,内部局域电场也比单势垒光量子阱的强;随着垒层光子晶体周期数增大,双重势垒光量子阱内部局域电场增强,而且垒、阱层折射率总和之比越大,双重势垒光量子阱的内部局域电场增强速度越快,当双重垒层光子晶体周期数同时增大时,双重势垒量子阱内部局域电场增强速度最快,透射峰越加精细.随着阱层光子晶体周期数的增大,单势垒或双重势垒光量子阱的内部局域电场强度均下降,但透射峰的透射率不随之改变.该特性为设计新型可调高品质的量子光学器件提供指导.     

实现多共振模的一维异质结构光子晶体

用两种正折射率材料设计了一维光子晶体异质结构模型,并利用传输矩阵法对该光子晶体的透射谱进行了理论研究。结果发现:光通过光子晶体时,在较宽的禁带范围内出现透射率为100%的多条共振模,且共振模的数目与光子晶体结构周期数m相对应;当入射角一定时,共振模的位置可以通过介质的折射率、厚度来调制;当入射光入射角度增大时,多共振模出现整体蓝移,同时共振模宽度变窄。这些特性有望应用于多通道窄带滤波器的设计。     

Resonant modes in quantum well structure of photonic crystals with different lattice constants

The resonant modes in a quantum well (QW) structure composed of three slabs of two dimensional (2D) photonic crystals with different lattice constants are analyzed with plane-wave-based transfer matrix method (TMM). It is found that the energy band of the well slab submerged into the band gap of barrier slab is discretized into quantized modes and the number of the resonant modes changes with the well slab thickness. A model structure of asymmetrical photonic QW consisting of two slabs of 2D photonic crystals with different lattice constants and one uniform dielectric slab in between is proposed and the resonant modes in it are investigated with the same method. A useful numerical simulation method for theoretical discussion as well as for practical application about photonic QW structure of photonic crystals with different lattice constants is proposed.     

Design,nano-fabrication and analysis of near-infrared 2D photonic crystal air-bridge structures

Selective wet etching is a technique that allows fabrication of freely suspended thin slabs in epitaxial heterostructures. This technique, together with high-aspect ratio dry etching, is used to create two-dimensional (2D) photonic crystals for near-infrared wavelengths in thin suspended AlGaAs membranes. The active photonic crystal areas contain hexagonal arrays of cylindrical holes completely perforating the membrane. For an appropriate selection of the slab thickness and the lattice parameter, dispersion relations for the guided modes are explicitly computed by solving the Maxwell equations in a geometry containing a 2D photonic crystal defined in the core layer of a dielectric waveguide structure. Measurements of the spectral transmittance in air-bridge samples show a narrow 30-dB-deep stop band for TM polarized incident light. The spectral position of the stop band shows a good agreement with theoretical band structure calculations when also the quasi-guided resonant modes outside the light cone are taken into account.     

二维八重准晶有机光子晶体平板的光学传播特性

采用时域有限差分法研究了二维八重准晶有机光子晶体的光传输特性,重点分析了光束在聚苯乙烯空气柱平板结构和聚苯乙烯介质柱结构中的透射特性与光局域特性。研究结果表明,即使在低折射率对比度的情况下,两种完整八重准晶平板结构中均出现了可见光波段的光子带隙和本征模,且光子带隙中心位置随着平板厚度的增大而红移。当在两种准晶结构中引入缺陷微腔时,带隙内的缺陷模产生位置和波长红移特性随着微腔结构的变化规律明显不同,这种差异性是由两种物理机制(即光子晶体缺陷能级变化与微腔所支持的驻波条件)共同作用的结果。这一研究结果将为实验制备有机准晶发光器件提供一定的理论基础。     

Silicon-based two-dimensional photonic crystal waveguides

A review of the properties of silicon-based two-dimensional (2D) photonic crystals is given, essentially infinite 2D photonic crystals made from macroporous silicon and photonic crystal slabs based on silicon-on-insulator basis. We discuss the bulk photonic crystal properties with particular attention to the light cone and its impact on the band structure. The application for wave guiding is discussed for both material systems, and compared to classical waveguides based on index-guiding. Losses of resonant waveguide modes above the light line are discussed in detail.     

Extension of photonic band gaps in one-dimensional photonic crystals

A method is proposed for extending photonic band gaps by constructing periodic structures from two or more consecutively located photonic crystals with different lattice constants or filling factors. The photonic band gaps with a maximum extension are predicted by superposing the photonic band gap maps on one another. It is demonstrated that both the lowest and higher order band gaps can be merged in photonic crystals with a high refractive index contrast.     

基于量子阱效应的光开关

把三块各带有一个缺陷的光子晶体结合起来,如果中央晶体的缺陷模处在两侧晶体的禁带中,缺陷模内的光波会受到两侧晶体的阻碍并被局域在中央晶体内,形成量子阱结构;若一侧晶体的缺陷模被移动到中央晶体缺陷模处,则只有一侧晶体阻碍在中央晶体缺陷模内传播的光波,量子阱效应完全消失,光的传输受到最大程度的阻碍.这种结构可同时具有窄带滤波器和光开关的功能,据此提出了一种高效的、灵敏的光开关的设计.采用传输矩阵法计算了一维光子晶体的透射谱和场分布.     

Theoretical study of light localization in photonic bandgaps of organic octagonal quasiperiodic photonic crystal slabs

Based on the polystyrene material of low refractive index, light localization in photonic bandgaps of two kinds of 2D octagonal quasiperiodic photonic crystal slabs are investigated in theory, including the air-rod polystyrene slab and polystyrene-rod slab. The properties of bandgaps and localized modes in both two defect-free patterns are analyzed in detail. When a single-point defect is introduced into two quasiperiodic structures, the position of emerging defect modes and the red-shifting of resonant modes in wavelength are observed quite differently when the defect microcavity is increased in size. This difference is caused by the competition of two physical mechanisms, which are the effect of defect energy levels caused by defects introduced into photonic crystals and the resonance of modes in the defect cavity. These results will provide theoretical support for experimental fabrication of organic light-emitting quasiperiodic photonic crystal devices.     

Enhanced third harmonic reflection and diffraction in Silicon on Insulator photonic waveguides

Enhanced third harmonic (TH) generation from Silicon-On-Insulator (SOI) planar waveguides as well as SOI photonic crystal (PhC) slabs is studied in different angular configurations, both in the visible and infrared energy ranges. In the SOI planar waveguide, the multilayer structure causes the optical properties such as TH reflection to be different from those of bulk silicon samples. This behavior is well reproduced by calculations of TH reflectance.Measurements of third-harmonic reflection and diffraction from one-dimensional PhC slabs etched in the SOI waveguide are also reported. The angular positions of TH peaks at various diffraction orders agree well with those calculated from a nonlinear grating equation. Both reflection and diffraction processes contribute to enhanced TH generation efficiency in the PhC slabs.TH reflectance measurements performed on PhC slabs in the near infrared show a resonant interaction between the incident beam and the photonic structure, dependent on the angle of incidence. This leads to a nonlinear conversion efficiency which is strongly enhanced with respect to that of the SOI waveguide, due to the excitation of strong local fields associated with the presence of photonic modes in the PhC slab.     

Design of a novel wideband single-mode waveguide in a photonic crystal slab structure

We propose a novel photonic crystal slab waveguide that provides a single-mode band with large bandwidth. The proposed waveguide is obtained by introducing a line defect in a triangular lattice of air holes in a dielectric slab. This line defect consists of holes which are not located in the original lattice points. The plane wave expansion (PWE) method is used to extract the band diagram of guiding modes and based on the results, photonic crystal holes in the defect row and its adjacent rows are modified to maximize the waveguide bandwidth. We show that using the proposed structure, a single-mode bandwidth of 17% can be achieved.     

Influence of the dielectric background on the quality factors of metallo-dielectric photonic crystals

The effect of varying the dielectric background on the quality factor of two-dimensional metallo-dielectric photonic crystals is theoretically studied. The studied metallo-dielectric photonic crystal consists of a square lattice of circular metallic rods embedded into a dielectric background with a defect rod on the center that creates resonant modes within the photonic band gap. The metal is modeled with the Drude dispersion relation. A combination of the finite-difference time-domain method together with a frequency filtering technique is used to estimate accurately the resonant frequencies and their quality factors. The results show that the quality factors increase with increasing background dielectric constant. If a dielectric background material such as Silicon is used instead of air, an enhancement in the quality factor of up to eight times can be achieved, depending on the resonant mode. We also show that, depending on the modes, there exists an optimal size for the defect rod that gives the maximum quality factor.