Homogeneity of a ZrF4-based glass at the nano-scale

A glass of composition 53ZrF₄–20BaF₂–4LaF₃–3AlF₃–20NaF (T_g=260°C) was prepared by careful crucible melting. High-resolution atomic force microscopy of fracture surfaces displayed the presence of nano-pores with diameters of 20–50 nm, being 4–10 nm deep, in all glasses. It was further found that only glasses without annealing and glasses with an annealing step considerably below T_g showed a distinct pattern, i.e. ripples of ≈20 nm in diameter and an rms roughness of ≈0.6 nm. Glasses annealed either near T_g or at the temperatures of maximum nucleation or maximum crystal growth rates showed both regions with the ripple pattern and regions with nano-hillocks, growing in size with increasing annealing temperature and time. Thus these hillocks nearly reach micro-dimensions of ≈270 nm in diameter and ≈65 nm in height following a 90 min annealing step at 343°C, the temperature of maximum crystal growth. These findings give evidence that the glass system, which is thought to be one of the most suitable for fiber drawing, is much less stable against nucleation and crystallization than anticipated.     

Phase diagram of the SrS–Ga2S3 system and its application to the single-crystal growth of SrGa2S4

Ce-doped SrGa₂S₄ compound is expected as a new host material of blue EL devices. However, the basic properties of bulk single crystals have not been fully clarified, since this compound has been mostly synthesized in the form of polycrystals or thin films. Here, we firstly present the pseudo-binary phase diagram of the SrS–Ga₂S₃ system constructed in accordance with our DTA data for single-crystal growth of SrGa₂S₄. It is shown that SrGa₂S₄ compound has a congruent melting point and a eutectic reaction in the side of excess of Ga₂S₃ concentration. On the basis of the phase diagram, single crystals of SrGa₂S₄ are grown using Ga₂S₃ as a self-flux in a horizontal Bridgman furnace. Colorless and transparent crystals having a typical size 2×2×2 mm³ are obtained.     

Microstructure and ferroelectric properties of BaTiO3 films on LaNiO3 buffer layers by rf sputtering

We have fabricated LaNiO₃ and BaTiO₃ films using the rf sputtering method. The LaNiO₃ were deposited on Si substrates, demonstrating a (1 0 0) highly oriented structure and nanocrystalline characteristic with a grain size of 30 nm. The BaTiO₃ thin films were deposited on the LaNiO₃ buffer layers, and have exhibited a (1 0 0) texture with a thickness of 400 nm. A smooth interface is obtained between the LaNiO₃ bottom electrode and the BaTiO₃ film from cross-section observations by scanning electron microscopy. The bi-layer films show a dense and column microstructure with a grain size of 60 nm. Ferroelectric characterizations have been obtained for the BaTiO₃ films. The remnant polarization and coercive field are 2.1 μC/cm² and 45 kV/cm, respectively. The leak current measurements have shown a good insulating property.     

Material characteristics of metalorganic chemical vapor deposition of Bi2Te3 films on GaAs substrates

Metal organic chemical vapor deposition has been investigated for growth of Bi₂Te₃ films on (0 0 1) GaAs substrates using trimethylbismuth and diisopropyltelluride as metal organic sources. The results of surface morphology, electrical and thermoelectric properties as a function of growth parameters are given. The surface morphologies of Bi₂Te₃ films were strongly dependent on the deposition temperatures. Surface morphologies varied from step-flow growth mode to island coalescence structures depending on deposition temperature. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor's ratio of VI/V and deposition temperature. By optimizing growth parameters, we could clearly observe an electrically intrinsic region of the carrier concentration at the temperature higher than 240 K. The high Seebeck coefficient (of −160 μVK⁻¹) and good surface morphology of this material is promising for Bi₂Te₃-based thermoelectric thin film and two-dimensional supperlattice device applications.     

Characterisation of semiconducting V2O5–Bi2O3–TeO2 glasses through ultrasonic measurements

Tellurite containing vanadate (50−x)V₂O₅–xBi₂O₃–50TeO₂ glasses with different bismuth (x=0, 5, 10, 15, 20 and 25 wt%) contents have been prepared by rapid quenching method. Ultrasonic velocities (both longitudinal and shear) and attenuation (for longitudinal waves only) measurements have been made using a transducer operated at the fundamental frequency of 5 MHz in the temperature range from 150 to 480 K. The elastic moduli, Debye temperature, and Poisson’s ratio have been obtained both as a function of temperature and Bi₂O₃ content. The room temperature study on ultrasonic velocities, attenuation, elastic moduli, Poisson’s ratio, Debye temperature and glass transition temperature show the absence of any anomalies with addition of Bi₂O₃ content. The observed results confirm that the addition of Bi₂O₃ modifier changes the rigid formula character of TeO₂ to a matrix of regular TeO₃ and ionic behaviour bonds (NBOs). A monotonic decrease in velocities and elastic moduli, and an increase in attenuation and acoustic loss as a function of temperature in all the glass samples reveal the loose packing structure, which is attributed to the instability of TeO₄ trigonal bipyramid units in the network as temperature increases. It is also inferred that the glasses with low Bi₂O₃ content are more stable than with high Bi₂O₃ content.     

The effect of annealing on the structure of Ge20Te80 glass: atomic-scale imaging using a scanning tunnelling microscope

The effect of annealing on the structure of Ge₂₀Te₈₀ glass has been examined in atomic-scale images obtained using a scanning tunnelling microscope (STM). The STM image has been able in part to answer the question as to how the atomic structure is changed by low-temperature (<T_g) annealing, whereas the effect of annealing on the structure was never observed in previous neutron diffraction study. Scanning tunneling microscope images as large as ≈ 100 nm² have provided atomic-resolution ridges ≈ 3 nm in length. The nearest neighbour distance between peaks in each alignment is equal to ≈ 0.5 nm; the alignments in parallel with each other are a distance of ≈ 0.7 nm apart. These ridges can generate a surface associated with pseudo flatness, the size of which is less than ≈ 10 nm². Thus, the effect of annealing on the structure of as-quenched Ge₂₀Te₈₀ glass has given rise to intermediate-range order in a region less than ≈ 10 nm². The atomic configuration of annealed Ge₂₀Te₈₀ glass is inhomogeneous in the range < 10 nm².     

磁控溅射衬底加热温度和后退火温度对制备β-Ga2O3薄膜材料的影响

作为宽禁带半导体材料的一员,结构稳定的β-Ga₂O₃具有比SiC和GaN更宽的禁带宽度和更高的巴利加优值,近年来受到科研人员的广泛关注。本文采用射频(RF)磁控溅射法在C面蓝宝石衬底上生长β-Ga₂O₃薄膜,探究溅射过程中衬底加热温度的影响。溅射完成后通过高温退火处理提升薄膜质量,研究衬底加热温度和后退火温度对氧化镓薄膜晶体结构和表面形貌的影响。利用X射线衍射(XRD)、原子力显微镜(AFM)等测试手段对β-Ga₂O₃薄膜晶体结构、表面形貌等进行分析表征。实验结果表明,随着衬底加热温度的升高,β-Ga₂O₃薄膜表面粗糙度逐渐降低,薄膜晶体质量得到显著提升;在氧气气氛中进行后退火,合适的后退火温度有利于氧化镓薄膜重新结晶、增大晶粒尺寸,能够有效修复薄膜的表面态和点缺陷,对于改善薄膜晶体质量有明显优势。     

Study of electrical properties of MoO3–Fe2O3–P2O5 and SrO–Fe2O3–P2O5 glasses by impedance spectroscopy. II

The electrical and dielectric properties for three series of MoO₃–Fe₂O₃–P₂O₅ and one series of SrO–Fe₂O₃–P₂O₅ glasses were measured by impedance spectroscopy in the frequency range from 0.01 Hz to 3 MHz and over the temperature range from 303 to 473 K. It was shown in Part I that the MoO₃ is incorporated into phosphate network and the structure/properties are strongly influenced by the overall O/P ratio. The Fe₂O₃ content and Fe(II)/Fe_tot ratio in these glasses have significant effects on the electrical conductivity and dielectric permittivity. With decreasing Fe₂O₃ content in MoO₃–Fe₂O₃–P₂O₅ glasses with O/P at 3.5 the dc conductivity, σ_dc(ω) decreases for two orders of magnitude, which indicates that the conductivity for these glasses depends on Fe₂O₃ and is independent of the MoO₃ content. Also, the dielectric properties such as ^′(ω), ^″(ω) and σ_ac(ω) and their variation with frequency and temperature indicates a decrease in relaxation intensity with increase in the concentration of MoO₃. On the other hand, the dc conductivity for MoO₃–Fe₂O₃–P₂O₅ glasses with O/P > 3.5 increases with the substitution of MoO₃ which has been explained by an increase in the number of non-bridging oxygens and formation of Fe–O–P bonds that are responsible for formation of small polarons. The increase in the dielectric permittivity, ^′(ω) with increasing MoO₃ content is attributed to the increase in the deformation of glass network with increasing bonding defects. For SrO–Fe₂O₃–P₂O₅ glasses the conductivity and dielectric permittivity remained constant with increasing SrO.     

Growth of pyroxene-type MnGeO3 and (Mn,Mg)GeO3 crystals by the floating-zone method

Pyroxene-type solid–solution crystals of (Mn_1−xMg_x)GeO₃ with x=0.06, 0.10 and 0.20 have been grown by the floating-zone method. The end member crystal of MnGeO₃ is broken into small pieces by the orthorhombic-to-monoclonic phase transition during cooling after growth. On the other hand, the solid–solution crystals keep the orthorhombic structure between the melting points and room temperature and no crack is formed. The unit cell volumes are significantly decreased with an increase in Mg content.     

Some characteristics of glass in the Al2O3---B2O3---SiO2 system from the gel

The colorless and transparent glasses in the Al₂O₃---B₂O₃---SiO₃ system with high B₂O₃ and SiO₂ content were prepared from gels at low temperature. Their IR spectra not only revealed the evolution of the gel to glass conversion, but also showed that the formation of mixed bonds in the glasses obtained did not show any effect due to the B₂O₃ content. The accuracy of the glass composition is dependent upon the SiO₂/B₂O₃ molar ratio. The higher the ratio, the less the deviation of the analyzed compositions of the resulting glasses from their original calculated values. It is obvious that the higher the ratio, the lower the thermal expansion coefficient and the higher the transformation temperature of the glass, and the temperature at which the thermal contraction reaches an equilibrium is higher.     

Influence of decomposition parameters on agglomeration process and total soda content in precipitated Al(OH)3

Grain size composition of precipitated Al(OH)₃ is dependent on the mechanism of decomposition process of the caustic solution which determines crystal growth process, agglomeration process and secondary nucleation. Because the literature data shows that the growth rate is very low, the agglomeration process plays an important role in increasing the initial particle size. On the other hand, the agglomeration process enables the inclusion of impurities by the grain boundary of sticking Al(OH)₃ particles, above all, the inclusion of soda Na₂O.

In this paper we investigate the influence of caustic soda concentration Na₂O_(c), that is the supersaturation of the solution, seed charge and seed grain size on the agglomeration and secondary nucleation processes and total soda content in precipitated Al(OH)₃. The results have shown that the factor which causes the increase of the agglomeration process also causes the increase of total soda content in precipitated Al(OH)₃.     

Structure and thermal stability of MOCVD ZrO2 films on Si (1 0 0)

The structure and thermal stability of ZrO₂ films grown on Si (1 0 0) substrates by metalorganic chemical vapor deposition have been studied by high-resolution transmission electron microscopy, selected area electron diffraction and X-ray energy dispersive spectroscopy. As-deposited films consist of tetragonal ZrO₂ nanocrystallites and an amorphous Zr silicate interfacial layer. After annealing at 850°C, some monoclinic phase is formed, and the grain size is increased. Annealing a 6 nm thick film at 850°C in O₂ revealed that the growth of the interfacial layer is at the expense of the ZrO₂ layer. In a 3.0 nm thick Zr silicate interfacial layer, there is a 0.9 nm Zr-free SiO₂ region right above the Si substrate. These observations suggest that oxygen reacted with the Si substrate to grow SiO₂, and SiO₂ reacted with ZrO₂ to form a Zr silicate interfacial layer during the deposition and annealing. Oxygen diffusion through the tetragonal ZrO₂ phase was found to be relatively easier than through the monoclinic phase.     

Wavelength selective materials modification of bulk As2S3 and As2Se3 by free electron laser irradiation

In this study we report first measurements of wavelength-selective infrared-induced materials modification of bulk As₂S₃ and As₂Se₃. These materials are currently being considered as candidate materials for infrared optical fiber transmission in the range of 1–10 μm. Our study is aimed at modifying oxygen, hydrogen and carbon impurities bound to chalcogenide constituent elements in the materials to reduce absorption. Tunable infrared radiation from the W.M. Keck Free Electron Laser (FEL) at Vanderbilt was used to excite specific vibrational modes, S–O–H and CH_x modes in bulk As₂S₃ and Se–H, CH_x and S–H₂ modes in bulk As₂Se₃. Changes in vibrational mode amplitudes are monitored by measuring the intensity of the Fourier transform infrared (FTIR) spectra before and after irradiation at appropriate wavelengths. By tuning wavelengths to hydrogen vibrational modes, we find evidence that hydrogen is released and/or redistributed athermally. In particular, following irradiation at specific resonant wavelengths, vibrational mode amplitudes as monitored by FTIR associated with CH_x are significantly reduced in bulk As₂S₃ and As₂Se₃ samples. In As₂S₃, the changes in CH_x modes are reversed by heat treatment at 115°C for 35 min in nitrogen atmosphere.     

Application of the sol-gel process to lower the melting temperature of glaze

Applications of the sol-gel process have been studied to lower the melting temperature of glaze in the system Na₂O---K₂O---CaO---ZnO---Al₂O₃---SiO₂. The high melting components such as SiO₂ and Al₂O₃ in the raw materials were replaced partly by the metal alkoxides, and the powders of raw materials were processed to be coated by the hydrolized metal alkoxides. It was found that the melting temperature lowered by 50–200°C depending on the amounts of the metal alkoxides used for replacement.     

Chemical strengthening of Na2O---Al2O3---SiO2 system glasses by surface controlled crystallization

Appropriate glass compositions of the Na₂O---Al₂O₃---SiO₂ system and glass melting technology were investigated. The dependence of some factors, such as composition of molten salts, time and temperature of ion exchange treatment on the modulus of rupture was studied. As expected, the coefficient of interdiffusion is a function of concentration and has the mixed-alkali effect. The order of the interdiffusion coefficient is 10⁻⁶ cm²/s. The effect of binary and ternary salt baths on the surface controlled crystallization was reported. The experimental data showed that there is a series of technological advantages from applying molten salts of the ternary system Li₂SO₄---Na₂SO₄---K₂SO₄ in comparison with the binary system Li₂SO₄---Na₂SO₄.     

Physical properties of amorphous Ge20Sb25−xBixSe55 thin films

The influence of substitution of Sb atoms by Bi atoms on the electrical and optical properties of thin films of the Ge₂₀Sb_25−xBi_xSe₅₅ [0x15] system are reported. Results of dc conductivity and thermoelectric power measurements between 150 and 450 K show that the Ge---Sb---Se system is chemically modified by addition of large concentrations of Bi atoms between X=5 and X=10 at.%). A transition from p-type for Sb-doped to n-type for Bi-doped films and a decrease of resistivity is observed. The absorption edge shifts to shorter wavelength, thereby decreasing the optical band gap of the system. Compositional dependences of electrical conductivity, thermoelectric power, and the appearance of n-type conduction are discussed from the stand point of chemical bonds formed in the films and related to the defect states produced due to incorporation of Bi atoms in high concentrations. The coexistence of band and hopping conduction is proposed. The ac conductivity in 0.1–10.0 kHz frequency and 150–450 K temperature range was found to obey a power law σ(ω, T) = Aω^s. The results were interpreted in terms of Elliott's theory, which assumes correlated barrier hopping (CBH) between the charged defect centres. It was found that computed results from the CBH model and experimental one are qualitative agreement for the present materials.     

New solvents for the growth of substituted BaFe12O19 single crystals from high-temperature solutions

The solubility of a series of hexaferrite derivatives of BaFe₁₂O₁₉ in solvents of the system Na₂O-B₂O₃ with oxide ratios of 7:3 and 3:2 has been investigated. The temperature dependences of the saturation concentration in these solvents are determined for ferrites with the nominal compositions Ba_0.8Pb_0.2Fe₁₂O₁₉, BaFe₁₀Ga₂O₁₉, BaFe₁₀Al₂O₁₉ and BaFe₈Mn₂ Ti₂O₁₉. Single crystals of BaFe₁₂O₁₉, in which part of the metal ions are replaced by various amounts of Pb²⁺, Ga³⁺, Al³⁺ and Mn²⁺ + Ti⁴⁺ ions, are g rown from the solutions by the slow cooling technique. The distribution coefficients of the substituting ions and the compositions of the crystals obtained are established by microprobe analysis (EPMA). Information on the position of substitution is obtained from the Mössbauer spectra.     

TiO2-SiO2 monolithic glass formation from sol-gel

This study demonstrates that hydrolysis should be carried out in a step manner in gel synthesis. The key to the increase in the amount of water added is the control of the hydrolysis rate of Ti(OC₄H₉)₄. The hydrolysis of Si(OC₂H₅)₄ can be carried out at about 75°C. The amount of added water (γ_WI), which varied with TiO₂ content (in mol%), was about 64–88% of the total amount of added water. The hydrolysis reaction should be performed at room temperature while Ti(OC₄H₉)₄ is added. The total amount of added water (γ_W) is related to the amount of solvent (R). For example, if TiO₂ is 40mol%, γ_W will vary from 3.2 to 8.0 when R varies from 0.8 to 2.0. The amount of added water was affected by the distribution of solvent in the metal alkoxides. The amount of added water can be increased when R_Si(OC2H5)4 = 1, R_Ti(OC4H9)4 > 1. The rate of rise in temperature of the thermolysis of the dried gel should be less than 10°C per hour, and the heat treatment temperatyre is related to the TiO₂ content (in mol%). Gel glasses without devitrification can only be obtained by thermolysis at 600°C from the gel with no less than 20 mol% TiO₂.     

NdxLa2−xCaB10O19: Synthesis and characterization

Solid solutions of Nd_xLa_2−xcaB₁₀O₁₉ with different Na³⁺ concentration have been synthesized by substituting Nd ³⁺ for La³⁺ in La₂CaB₁₀O₁₉ Powder X-ray diffraction analysis shows that Nd³⁺ is easy to incorporate into the crystal. Single crystal nd_xLa_2−xCaB₁₀O₁₉ (NLCB) in centimeter size has been grown by Kyropoulos method. The crystal has strong absorption around 580nm and 805nm. The fluorescence spectra indicate that there is an energy transition at 1.06μm. And the SHG of NLCB is about the twice as that of KDP. These favorable features make NLCB a candidate for laser NLO multifunctional materials.     

Synthesis and characterization of a novel non-linear optical material La2SrB10O19

A novel compound with the chemical formula of La₂SrB₁₀O₁₉ has been successfully synthesized from the La₂O₃--- SrO---B₂O₃ system via a solid state reaction. The powder X-ray diffraction data is reported. It is found that the data show little difference from that of La₂CaB₁₀O₁₉ which demonstrate that they are isostructural. The powder second harmonic generation effect of La₂SrB₁₎O₁₉ is about twice that of KH₂PO₄(KDP). The investigation of crystal growth is in progress.